WO2011144207A3 - Herstellungsverfahren einer halbleitervorrichtung - Google Patents

Herstellungsverfahren einer halbleitervorrichtung Download PDF

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Publication number
WO2011144207A3
WO2011144207A3 PCT/DE2011/075107 DE2011075107W WO2011144207A3 WO 2011144207 A3 WO2011144207 A3 WO 2011144207A3 DE 2011075107 W DE2011075107 W DE 2011075107W WO 2011144207 A3 WO2011144207 A3 WO 2011144207A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor surface
passivation layer
substrate
producing
layer
Prior art date
Application number
PCT/DE2011/075107
Other languages
English (en)
French (fr)
Other versions
WO2011144207A2 (de
Inventor
Peter Engelhart
Robert Seguin
Wilhelmus Mathijs Marie Kessels
Gijs Dingemans
Original Assignee
Q-Cells Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Q-Cells Se filed Critical Q-Cells Se
Publication of WO2011144207A2 publication Critical patent/WO2011144207A2/de
Publication of WO2011144207A3 publication Critical patent/WO2011144207A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Die Erfindung betrifft ein Herstellungsverfahren einer Halbleitervorrichtung, umfassend die folgenden Verfahrensschritte: Bereitstellen eines Substrats (3) mit einer Halbleiteroberfläche (31); Bilden einer ersten Passivierschicht (1) aus einem ersten Dielektrikmaterial auf der Halbleiteroberfläche (31); Aufbringen einer zweiten Passivierschicht (2) aus einem zweiten Dielektrikmaterial auf die erste Passivierschicht (1) und / oder auf eine der Halbleiteroberfläche (31) gegenüberliegend angeordneten weiteren Halbleiteroberfläche auf dem Substrat (3); und Unterziehung des Substrates (3) einer Schicht opfernden Behandlung, bei der eine Schichtdicke der zweiten Passivierschicht (2) im Wesentlichen entlang der gesamten Halbleiteroberfläche (31) oder der gesamten weiteren Halbleiteroberfläche um einen überwiegenden Teil der Schichtdicke reduziert wird.
PCT/DE2011/075107 2010-05-18 2011-05-12 Herstellungsverfahren einer halbleitervorrichtung WO2011144207A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010016992.7A DE102010016992B4 (de) 2010-05-18 2010-05-18 Herstellungsverfahren einer Halbleitervorrichtung
DE102010016992.7 2010-05-18

Publications (2)

Publication Number Publication Date
WO2011144207A2 WO2011144207A2 (de) 2011-11-24
WO2011144207A3 true WO2011144207A3 (de) 2012-09-13

Family

ID=44900273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075107 WO2011144207A2 (de) 2010-05-18 2011-05-12 Herstellungsverfahren einer halbleitervorrichtung

Country Status (2)

Country Link
DE (1) DE102010016992B4 (de)
WO (1) WO2011144207A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012101456A1 (de) 2012-02-23 2013-08-29 Schott Solar Ag Verfahren zum Herstellen einer Solarzelle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994879A (en) * 1988-11-25 1991-02-19 Agency Of Industrial Science & Technology Photoelectric transducer with light path of increased length
DE10054190A1 (de) * 2000-11-02 2002-05-16 Promos Technologies Inc Verfahren zum Einebnen einer Isolierung in Form eines flachen Grabens
EP1489667A2 (de) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
DE102005025125B4 (de) * 2005-05-29 2008-05-08 Hahn-Meitner-Institut Berlin Gmbh Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle
DE102006046726A1 (de) * 2006-10-02 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994879A (en) * 1988-11-25 1991-02-19 Agency Of Industrial Science & Technology Photoelectric transducer with light path of increased length
DE10054190A1 (de) * 2000-11-02 2002-05-16 Promos Technologies Inc Verfahren zum Einebnen einer Isolierung in Form eines flachen Grabens
EP1489667A2 (de) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Verfahren zur Passivierung der Rückseite von Solarzellen und Solarzellen mit solcher Passivierung
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
G. DINGEMANS ET AL: "Recent Progress in the Development and Understanding of Silicon Surface Passivation by Aluminum Oxide for Photovoltaics", 25TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE AND EXHIBITION / 5TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VALENCIA, SPAIN, 1 January 2010 (2010-01-01), pages 1083 - 1090, XP055010434 *
TERLINDEN N ET AL: "Role of field-effect on c-Si surface passivation by ultrathin (2â 20 nm) atomic layer deposited Al2O3", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 96, no. 11, 15 March 2010 (2010-03-15), pages 112101 - 112101, XP012130428, ISSN: 0003-6951, DOI: 10.1063/1.3334729 *

Also Published As

Publication number Publication date
DE102010016992B4 (de) 2015-07-23
WO2011144207A2 (de) 2011-11-24
DE102010016992A1 (de) 2011-11-24

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