WO2011132781A1 - ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 - Google Patents

ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 Download PDF

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Publication number
WO2011132781A1
WO2011132781A1 PCT/JP2011/059973 JP2011059973W WO2011132781A1 WO 2011132781 A1 WO2011132781 A1 WO 2011132781A1 JP 2011059973 W JP2011059973 W JP 2011059973W WO 2011132781 A1 WO2011132781 A1 WO 2011132781A1
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WIPO (PCT)
Prior art keywords
diffusion layer
type diffusion
forming composition
layer forming
glass powder
Prior art date
Application number
PCT/JP2011/059973
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English (en)
French (fr)
Japanese (ja)
Inventor
野尻　剛
吉田　誠人
香 岡庭
洋一 町井
岩室　光則
修一郎 足立
鉄也 佐藤
木沢　桂子
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日立化成工業株式会社
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Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to KR1020127030146A priority Critical patent/KR20130066613A/ko
Priority to JP2012511723A priority patent/JP5541358B2/ja
Priority to CN201180018428.3A priority patent/CN102834898B/zh
Publication of WO2011132781A1 publication Critical patent/WO2011132781A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
PCT/JP2011/059973 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 WO2011132781A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020127030146A KR20130066613A (ko) 2010-04-23 2011-04-22 ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
JP2012511723A JP5541358B2 (ja) 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
CN201180018428.3A CN102834898B (zh) 2010-04-23 2011-04-22 n型扩散层形成组成物、n型扩散层的制造方法及太阳能电池元件的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-100226 2010-04-23
JP2010100226 2010-04-23

Publications (1)

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WO2011132781A1 true WO2011132781A1 (ja) 2011-10-27

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JP (2) JP5541358B2 (zh)
KR (1) KR20130066613A (zh)
CN (1) CN102834898B (zh)
TW (1) TWI482302B (zh)
WO (1) WO2011132781A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013005738A1 (ja) * 2011-07-05 2013-01-10 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
WO2013129002A1 (ja) * 2012-02-29 2013-09-06 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
US9722102B2 (en) 2014-02-26 2017-08-01 Heraeus Precious Metals North America Conshohocken Llc Glass comprising molybdenum and lead in a solar cell paste

Citations (3)

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JPH02162720A (ja) * 1988-12-15 1990-06-22 Sharp Corp 半導体装置の製造方法
JPH04158514A (ja) * 1990-10-22 1992-06-01 Sumitomo Chem Co Ltd 半導体基板への不純物拡散方法
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法

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US4891331A (en) * 1988-01-21 1990-01-02 Oi-Neg Tv Products, Inc. Method for doping silicon wafers using Al2 O3 /P2 O5 composition
JPH02177569A (ja) * 1988-12-28 1990-07-10 Sharp Corp 太陽電池の製造方法
CN1236503C (zh) * 2002-07-19 2006-01-11 中国科学院广州能源研究所 一种颗粒硅带的制备方法及其专用设备
US9263600B2 (en) * 2005-11-10 2016-02-16 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle photovoltaic devices
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WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP5522900B2 (ja) * 2008-02-22 2014-06-18 東京応化工業株式会社 電極形成用導電性組成物及び太陽電池の形成方法
TW201008889A (en) * 2008-06-06 2010-03-01 Du Pont Glass compositions used in conductors for photovoltaic cells
CN101364619B (zh) * 2008-10-08 2010-08-25 湖南大学 一种硅薄膜太阳能电池的制作方法
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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Publication number Priority date Publication date Assignee Title
JPH02162720A (ja) * 1988-12-15 1990-06-22 Sharp Corp 半導体装置の製造方法
JPH04158514A (ja) * 1990-10-22 1992-06-01 Sumitomo Chem Co Ltd 半導体基板への不純物拡散方法
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013005738A1 (ja) * 2011-07-05 2013-01-10 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP5176158B1 (ja) * 2011-07-05 2013-04-03 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
WO2013129002A1 (ja) * 2012-02-29 2013-09-06 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5610100B2 (ja) * 2012-02-29 2014-10-22 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
US9722102B2 (en) 2014-02-26 2017-08-01 Heraeus Precious Metals North America Conshohocken Llc Glass comprising molybdenum and lead in a solar cell paste

Also Published As

Publication number Publication date
TW201201399A (en) 2012-01-01
CN102834898A (zh) 2012-12-19
JPWO2011132781A1 (ja) 2013-07-18
JP5541358B2 (ja) 2014-07-09
TWI482302B (zh) 2015-04-21
KR20130066613A (ko) 2013-06-20
CN102834898B (zh) 2016-06-15
JP2014146811A (ja) 2014-08-14

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