WO2011132616A1 - Matériau d'empreinte à grande résistance à l'abrasion - Google Patents

Matériau d'empreinte à grande résistance à l'abrasion Download PDF

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Publication number
WO2011132616A1
WO2011132616A1 PCT/JP2011/059420 JP2011059420W WO2011132616A1 WO 2011132616 A1 WO2011132616 A1 WO 2011132616A1 JP 2011059420 W JP2011059420 W JP 2011059420W WO 2011132616 A1 WO2011132616 A1 WO 2011132616A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
imprint material
film
pni
imprint
Prior art date
Application number
PCT/JP2011/059420
Other languages
English (en)
Japanese (ja)
Inventor
淳平 小林
加藤　拓
圭介 首藤
正睦 鈴木
Original Assignee
日産化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日産化学工業株式会社 filed Critical 日産化学工業株式会社
Priority to CN201180030040.5A priority Critical patent/CN102939640B/zh
Priority to KR1020127030057A priority patent/KR101852537B1/ko
Priority to JP2012511640A priority patent/JP6015937B2/ja
Publication of WO2011132616A1 publication Critical patent/WO2011132616A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/106—Esters of polycondensation macromers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Definitions

  • the present invention relates to an imprint material and a film produced from the material and having a pattern transferred thereon. More specifically, the present invention relates to an imprint material having high scratch resistance even after the pattern is transferred, and a film produced from the material and having the pattern transferred thereon.
  • the molecular weights of A 1 and A 2 are M A1 and M A2 , respectively.
  • the alkylene oxide unit having 2 carbon atoms is represented by (—C 2 H 4 —O—), and is typically an ethylene oxide unit (hereinafter abbreviated as “EO” in this specification). it may be applied 44 as a molecular weight M O.
  • the alkylene oxide unit having 3 carbon atoms is represented by (—C 3 H 6 —O—) and is typically a propylene oxide unit, and 58 may be applied as the molecular weight M O thereof.
  • Example 3 DPEA-12 of Example 1 was changed to NK ester A-TMPT-3EO (manufactured by Shin-Nakamura Chemical Co., Ltd., molecular weight: 428) (hereinafter abbreviated as “A-TMPT-3EO” in this specification). Except that, an imprint material PNI-A3 was prepared in the same manner as in Example 1. In this example, A-TMPT-3EO corresponds to the component (A), and the number of alkylene oxide units per molecule is 3 EO.
  • Example 2 Example 1 except that DPEA-12 of Example 1 was changed to NK ester A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.) (hereinafter abbreviated as “A-DPH” in this specification).
  • An imprint material PNI-B2 was prepared.
  • A-DPH corresponds to the component (A ′).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

Matériau d'empreinte à grande résistance à l'abrasion comprenant un composé renfermant des unités d'oxyde d'alkylène en C2-3 et au moins deux groupes polymérisables en tant que composant (A) et un initiateur de photopolymérisation en tant que composant (B). Les groupes polymérisables comprennent sont pris dans au moins un élément constitutif du groupe constitués de groupes acryloyloxy, acryloyle, méthacryloyloxy et méthacryloyle. Le matériau d'empreinte peut également comprendre, outre le composant (A), un composé comprenant au moins deux groupes polymérisables, mais pas d'unités d'oxyde d'alkylène en C2-3, en tant que composant (A').
PCT/JP2011/059420 2010-04-19 2011-04-15 Matériau d'empreinte à grande résistance à l'abrasion WO2011132616A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180030040.5A CN102939640B (zh) 2010-04-19 2011-04-15 高耐擦伤性压印材料
KR1020127030057A KR101852537B1 (ko) 2010-04-19 2011-04-15 고내찰상성 임프린트 재료
JP2012511640A JP6015937B2 (ja) 2010-04-19 2011-04-15 高耐擦傷性インプリント材料

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010096300 2010-04-19
JP2010-096300 2010-04-19

Publications (1)

Publication Number Publication Date
WO2011132616A1 true WO2011132616A1 (fr) 2011-10-27

Family

ID=44834136

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/059420 WO2011132616A1 (fr) 2010-04-19 2011-04-15 Matériau d'empreinte à grande résistance à l'abrasion

Country Status (5)

Country Link
JP (2) JP6015937B2 (fr)
KR (1) KR101852537B1 (fr)
CN (1) CN102939640B (fr)
TW (1) TWI565721B (fr)
WO (1) WO2011132616A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014072238A (ja) * 2012-09-27 2014-04-21 Nissan Chem Ind Ltd インプリント材料
WO2016136181A1 (fr) * 2015-02-27 2016-09-01 Canon Kabushiki Kaisha Procédé de formation des motifs, procédé de fabrication de substrat traité, procédé de fabrication de composant optique, procédé de fabrication de carte de circuit imprimé, et procédé de fabrication de composant électronique
JP2016199617A (ja) * 2015-04-07 2016-12-01 日本合成化学工業株式会社 光硬化性組成物
JP2017043103A (ja) * 2016-11-08 2017-03-02 リンテック株式会社 光学用フィルム、並びにディスプレイ装置
WO2017169838A1 (fr) * 2016-03-30 2017-10-05 Dic株式会社 Composition de résine durcissable par rayonnement d'énergie active pour article optique, corps durci et feuille optique
TWI610946B (zh) * 2013-04-18 2018-01-11 日產化學工業股份有限公司 壓印材料
CN109642000A (zh) * 2016-10-12 2019-04-16 日产化学株式会社 耐光性硬涂层材料

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201901065TA (en) * 2016-08-10 2019-03-28 Nissan Chemical Corp Imprint material

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10182745A (ja) * 1996-09-17 1998-07-07 Nof Corp 含フッ素単量体組成物及び減反射フィルム
JPH1180293A (ja) * 1997-09-16 1999-03-26 Nippon Kayaku Co Ltd 光学材料用樹脂組成物及びその硬化物
WO2007029542A1 (fr) * 2005-09-09 2007-03-15 Tokyo Ohka Kogyo Co., Ltd. Composition filmogene pour la nanoimpression et procédé de traçage de motif
JP2008238416A (ja) * 2007-03-24 2008-10-09 Daicel Chem Ind Ltd ナノインプリント用樹脂組成物
WO2009101758A1 (fr) * 2008-02-14 2009-08-20 Daicel Chemical Industries, Ltd. Composition de résine durcissable pour nano-empreinte

Family Cites Families (14)

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JP2007084783A (ja) * 2005-08-24 2007-04-05 Nippon Shokubai Co Ltd 硬化性組成物及び硬化物
JP4770354B2 (ja) * 2005-09-20 2011-09-14 日立化成工業株式会社 光硬化性樹脂組成物及びこれを用いたパターン形成方法
JP4929722B2 (ja) * 2006-01-12 2012-05-09 日立化成工業株式会社 光硬化型ナノプリント用レジスト材及びパターン形成法
JP4952045B2 (ja) * 2006-04-28 2012-06-13 Ｊｓｒ株式会社 エネルギー線硬化型インクジェット印刷用インク
JP5117002B2 (ja) * 2006-07-10 2013-01-09 富士フイルム株式会社 光硬化性組成物およびそれを用いたパターン形成方法
JP5109370B2 (ja) * 2006-12-28 2012-12-26 大日本印刷株式会社 ハードコート層用硬化性樹脂組成物、及びハードコートフィルム
JP2008202022A (ja) * 2007-01-23 2008-09-04 Fujifilm Corp 光ナノインプリントリソグラフィ用硬化性組成物およびそれを用いたパターン形成方法
JP2009260274A (ja) * 2008-03-21 2009-11-05 Mitsubishi Rayon Co Ltd 太陽電池用透明部材および太陽電池
JP5269467B2 (ja) * 2008-04-18 2013-08-21 三菱レイヨン株式会社 照明装置用保護板、およびこれを具備した照明装置
JP5202146B2 (ja) * 2008-07-14 2013-06-05 日本化薬株式会社 （メタ）アクリレート化合物及びそれを含有する活性エネルギー線硬化型樹脂組成物並びにその硬化物
JP2010218605A (ja) * 2009-03-13 2010-09-30 Toshiba Corp パターン転写用紫外線硬化性樹脂材料、及びこれを用いた磁気記録媒体の製造方法
KR101498530B1 (ko) * 2009-08-25 2015-03-04 닛산 가가쿠 고교 가부시키 가이샤 고경도 임프린트 재료
TWI433882B (zh) * 2010-04-05 2014-04-11 Mitsubishi Rayon Co 活性能量線硬化性樹脂組成物與使用該組成物之奈米凹凸構造體及其製造方法、以及具備奈米凹凸構造體的撥水性物品
JP5017446B2 (ja) * 2010-12-08 2012-09-05 株式会社東芝 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10182745A (ja) * 1996-09-17 1998-07-07 Nof Corp 含フッ素単量体組成物及び減反射フィルム
JPH1180293A (ja) * 1997-09-16 1999-03-26 Nippon Kayaku Co Ltd 光学材料用樹脂組成物及びその硬化物
WO2007029542A1 (fr) * 2005-09-09 2007-03-15 Tokyo Ohka Kogyo Co., Ltd. Composition filmogene pour la nanoimpression et procédé de traçage de motif
JP2008238416A (ja) * 2007-03-24 2008-10-09 Daicel Chem Ind Ltd ナノインプリント用樹脂組成物
WO2009101758A1 (fr) * 2008-02-14 2009-08-20 Daicel Chemical Industries, Ltd. Composition de résine durcissable pour nano-empreinte

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014072238A (ja) * 2012-09-27 2014-04-21 Nissan Chem Ind Ltd インプリント材料
TWI610946B (zh) * 2013-04-18 2018-01-11 日產化學工業股份有限公司 壓印材料
WO2016136181A1 (fr) * 2015-02-27 2016-09-01 Canon Kabushiki Kaisha Procédé de formation des motifs, procédé de fabrication de substrat traité, procédé de fabrication de composant optique, procédé de fabrication de carte de circuit imprimé, et procédé de fabrication de composant électronique
JP2016162862A (ja) * 2015-02-27 2016-09-05 キヤノン株式会社 パターンの形成方法、加工基板の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法
US10395943B2 (en) 2015-02-27 2019-08-27 Canon Kabushiki Kaisha Patterning method, method for producing processed substrate, method for producing optical component, method for producing circuit board, and method for producing electronic component
JP2016199617A (ja) * 2015-04-07 2016-12-01 日本合成化学工業株式会社 光硬化性組成物
WO2017169838A1 (fr) * 2016-03-30 2017-10-05 Dic株式会社 Composition de résine durcissable par rayonnement d'énergie active pour article optique, corps durci et feuille optique
JPWO2017169838A1 (ja) * 2016-03-30 2018-06-28 Dic株式会社 光学物品用活性エネルギー線硬化型樹脂組成物、硬化物及び光学シート
CN109642000A (zh) * 2016-10-12 2019-04-16 日产化学株式会社 耐光性硬涂层材料
JP2017043103A (ja) * 2016-11-08 2017-03-02 リンテック株式会社 光学用フィルム、並びにディスプレイ装置

Also Published As

Publication number Publication date
CN102939640B (zh) 2016-05-11
KR20130054960A (ko) 2013-05-27
TWI565721B (zh) 2017-01-11
CN102939640A (zh) 2013-02-20
JP6015937B2 (ja) 2016-10-26
JPWO2011132616A1 (ja) 2013-07-18
KR101852537B1 (ko) 2018-04-27
JP2016195268A (ja) 2016-11-17
JP6319596B2 (ja) 2018-05-09
TW201302819A (zh) 2013-01-16

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