WO2011125641A1 - Cellule solaire à couches minces et procédé de fabrication pour celle-ci - Google Patents

Cellule solaire à couches minces et procédé de fabrication pour celle-ci Download PDF

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Publication number
WO2011125641A1
WO2011125641A1 PCT/JP2011/057770 JP2011057770W WO2011125641A1 WO 2011125641 A1 WO2011125641 A1 WO 2011125641A1 JP 2011057770 W JP2011057770 W JP 2011057770W WO 2011125641 A1 WO2011125641 A1 WO 2011125641A1
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Prior art keywords
electrode layer
groove
solar cell
film solar
photoelectric conversion
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PCT/JP2011/057770
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English (en)
Japanese (ja)
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立花　伸介
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a thin film solar cell and a manufacturing method thereof.
  • a transparent conductive film such as SnO 2 , ITO (Indium-Tin Oxide) or ZnO is formed as a first electrode layer on an insulating translucent substrate such as glass.
  • a photoelectric conversion layer is formed by stacking a semiconductor p layer, an i layer, and an n layer in this order on the first electrode layer.
  • a second electrode layer is formed as a back electrode layer on the photoelectric conversion layer.
  • the second electrode layer of the thin-film solar cell is generally a laminated structure in which a transparent electrode layer such as ZnO or ITO is laminated on a layer made of a highly reflective material such as Ag or Al.
  • Patent Document 1 Japanese Patent Laid-Open No. 9-83001 (Patent Document 1) is a prior document disclosing an integrated thin film solar cell.
  • the non-power generation region that does not contribute to power generation is reduced in order to improve the conversion efficiency of the thin film solar cell.
  • a conduction groove is formed using a laser scribing method.
  • FIG. 24 is a plan view showing the structure of an integrated thin film solar cell described in Japanese Patent Laid-Open No. 9-83001 (Patent Document 1).
  • FIG. 25 is a view as seen from the direction of the arrow XXV-XXV in FIG.
  • a transparent conductive film 2 is formed on the glass substrate 1 as a first electrode layer.
  • a first separation groove 5 is formed in the first electrode layer 2 using laser irradiation.
  • a photoelectric conversion layer 3 is formed on the first electrode layer 2.
  • the groove part 6 for contact lines is formed in the photoelectric converting layer 3 using laser irradiation.
  • a second electrode layer 4 is formed on the photoelectric conversion layer 3.
  • a contact line for connecting the first electrode layer 2 and the second electrode layer 4 is formed in the contact line groove 6.
  • a second separation groove 7 is formed in the second electrode layer 4 and the photoelectric conversion layer 3. The power generation region and the output extraction regions P and N are separated by the second separation groove 7.
  • a conducting groove 8 is formed in the photoelectric conversion layer 3 and the second electrode layer 4.
  • An output extraction electrode 10 is formed by embedding the conductive groove 8 with a conductive material 9.
  • An insulating region 30 is provided in order to insulate the periphery of the thin film solar cell.
  • the present inventor has found the following problems or sources of problems.
  • the intermediate output measurement A larger output may be measured in the final output measurement than the value expected from the result.
  • FIG. 26 is a comparative diagram for explaining the problem.
  • the point contact terminal is in contact with the second electrode layer at the normal position of the positive electrode side output extraction region P. It is sectional drawing which shows a state. The output of the thin film solar cell is measured by bringing the probe of the measuring instrument into contact with the second electrode layer 4 in each of the positive electrode side output extraction region P and the negative electrode side output extraction region N shown in FIG.
  • the positive electrode side and negative electrode side output extraction regions P and N of the thin-film solar cell in which the second separation groove portion 7 and the conduction groove portion 8 are formed are in the range of the width W and in the range of about 1 mm.
  • the positive electrode side output extraction region P includes a range of a width W B where the first electrode layer 2 and the second electrode layer 4 are connected, a range of a width W C where four conductive grooves 8 are formed, It is divided into a range of the remaining width W D.
  • the width W is the width of a region that does not contribute to the output of the thin film solar cell, it is necessary to reduce the width W in order to improve the output per unit area of the thin film solar cell.
  • Width W 8 of the conduction groove 8 formed by the laser irradiation is about 100 [mu] m, distance W A conducting groove 8 adjacent to is about 100 [mu] m. Since the four conducting grooves 8 are formed, the width W C is about 700 ⁇ m. Width W B is approximately 150 [mu] m, is about 150 [mu] m width W D.
  • point contact terminal 20A In order to accurately measure the output of the thin-film solar cell by point contact terminal 20A is a probe of the measuring device, it is necessary to contact the point contact terminal 20A and the second electrode layer 4 in the range of the width W B.
  • FIG. 27 is a comparative view for explaining the problem, and is a cross-sectional view showing a state in which the point contact terminal is in contact with the thin film solar cell in the power generation region in the intermediate output measurement process in the thin film solar cell.
  • the measurement result in the intermediate measurement process is an output excluding one stage of the solar battery cell, and thus may not satisfy the specified value.
  • FIG. 28 is a comparative view for explaining the problem, and is a cross-sectional view showing a state in which the point contact terminal is in contact with the second electrode layer in the range of the width W C in the intermediate output measurement step in the thin film solar cell. It is. As shown in FIG. 28, the first electrode layer 2 and the second electrode layer 4 are not connected in the range of the width W C.
  • the width is extended through the portion.
  • the output of the thin-film solar cell is measured. In this case, since the path for taking out the output of the thin film solar cell becomes longer, the resistance becomes higher, and the measurement result in the intermediate measurement process is lowered.
  • the second contact is made with the point contact terminal 20A. Since the electrode layer 4 and the 1st electrode layer 2 are not connected, the output of a thin film solar cell cannot be measured.
  • FIG. 29 is a comparative diagram for explaining the problem.
  • the surface contact terminal is in contact with the second electrode layer at the normal position of the positive electrode side output extraction region P. It is sectional drawing which shows a state.
  • the second electrode 4 faces the contact terminals 22A of the range of the width W B It is necessary to contact at least partly.
  • FIG. 30 is a comparative diagram for explaining the problem.
  • a part of the surface contact terminal is in contact with the second electrode layer in the power generation region on the positive electrode side output extraction region P side. It is sectional drawing which shows the state which is carrying out.
  • the measurement result in the intermediate measurement process is an output excluding one stage of the solar battery cell, and thus may not satisfy the specified value.
  • Figure 31 is a comparison diagram for explaining a problem in the intermediate output measuring step in the thin film solar cell, in the scope and width W D of the width W C of the surface contact terminals positive side output extraction region P No. It is sectional drawing which shows the state which is contacting with 2 electrode layers. As shown in FIG. 28, the first electrode layer 2 and the second electrode layer 4 are not connected in the range of the width W C and the range of the width W D.
  • the width is extended through the portion.
  • the output of the thin-film solar cell is measured. In this case, since the path for taking out the output of the thin film solar cell becomes longer, the resistance becomes higher, and the measurement result in the intermediate measurement process is lowered.
  • FIG. 32 is a plan view showing thin-film solar cells separated in a grid pattern.
  • 33 is a cross-sectional view of one example viewed from the direction of the arrow XXXIII-XXXIII in FIG. 34 is a cross-sectional view of another example as viewed from the direction of the arrow XXXIV-XXXIV in FIG.
  • the second electrode layer 4 and the photoelectric conversion layer 3 are formed in a lattice shape by the second separation groove portion 7 and the groove portion 11 orthogonal to the second separation groove portion 7. Have been separated.
  • the thin film solar cell of another example includes the second electrode layer 4, the photoelectric conversion layer 3, and the first electrode by the second separation groove portion 7 and the groove portion 11 orthogonal to the second separation groove portion 7.
  • the electrode layer 2 is separated in a grid pattern.
  • FIG. 35 is a comparative diagram for explaining the problem.
  • the surface contact terminal is in contact with the second electrode layer at the normal position of the negative electrode side output extraction region N. It is sectional drawing which shows a state.
  • a range of a width W M where the first electrode layer 2 and the second electrode layer 4 are connected and four conductive grooves 8 are formed. The range is divided into a range of width W N and a range of remaining width W O.
  • FIG. 36 is a comparative diagram for explaining the problem.
  • a part of the surface contact terminal is in contact with the second electrode layer in the power generation region on the negative electrode side output extraction region N side.
  • the output of the thin film solar cell can be measured. it can.
  • the surface contact terminals 22B are in contact with each other in the power generation area S, the cell may leak depending on how the surface contact terminals 22B are contacted, thereby reducing the characteristics of the thin-film solar cell. For this reason, it is preferable in terms of production and apparatus configuration that the surface contact terminal 22B is not brought into contact in the power generation area S.
  • FIG. 37 is a comparative diagram for explaining the problem.
  • the surface contact terminals are the first in the range of the width W N of the negative electrode side output extraction region N and the range of the width W O. It is sectional drawing which shows the state which is contacting with 2 electrode layers. As shown in FIG. 37, the first electrode layer 2 and the second electrode layer 4 are not connected in the range of the width W N and the range of the width W O.
  • the present invention has been made in view of the above-described problems.
  • An object of the present invention is to provide a thin film solar cell capable of measuring an output and a manufacturing method thereof.
  • the manufacturing method of the thin film solar cell based on 1st aspect of this invention forms the photoelectric converting layer on the process of forming a 1st separation groove part in the 1st electrode layer formed on the board
  • the method of manufacturing a thin film solar cell includes a step of measuring the output of the power generation region by bringing a measurement terminal into contact with the second electrode layer in the output extraction region separated from the power generation region by the second separation groove;
  • the extraction region includes a step of forming a conducting groove in the photoelectric conversion layer and the second electrode layer, and a step of embedding a conductive material in the conducting groove.
  • a thin film solar cell according to the first aspect of the present invention is formed on a substrate, a first electrode layer formed on the substrate, a photoelectric conversion layer formed on the first electrode layer, and a photoelectric conversion layer. And a second electrode layer.
  • the thin-film solar cell includes a first separation groove that separates the first electrode layer, a contact line that connects the first electrode layer and the second electrode layer, and a second separation groove that separates at least the second electrode layer. It has.
  • the thin-film solar cell includes an output extraction region separated from the power generation region by the second separation groove, and a conductive material that penetrates the photoelectric conversion layer and the second electrode layer in the output extraction region and is embedded with a conductive material. And a common groove portion.
  • the conducting groove is formed discontinuously at intervals in the length direction of the second separation groove.
  • the manufacturing method of the thin film solar cell based on the 2nd aspect of this invention forms the photoelectric converting layer on the process of forming a 1st separation groove part in the 1st electrode layer formed on the board
  • the method for manufacturing a thin film solar cell includes a step of forming a second electrode layer on the photoelectric conversion layer and forming a contact line connecting the first electrode layer and the second electrode layer in the contact line groove portion; And a step of forming a second separation groove in at least the second electrode layer.
  • the thin-film solar cell manufacturing method includes a conduction groove portion that penetrates the photoelectric conversion layer and the second electrode layer in the output extraction region separated from the power generation region by the second separation groove portion and is embedded with a conductive material. Forming a discontinuity with an interval in the length direction of the second separation groove, a step of measuring the output of the power generation region by bringing a measurement terminal into contact with the second electrode layer in the output extraction region, And embedding a conductive material in the common groove.
  • a mask is formed on the second electrode layer in the output extraction region at a predetermined interval, and then the conducting groove is continuously irradiated with a laser.
  • the conducting groove in the step of forming the conducting groove, is formed by laser irradiation discontinuously by a laser program.
  • the 1st electrode layer connected to the 2nd electrode layer which contacts a measurement terminal in the process of measuring the said output has a 2nd separation groove part in the 2nd electrode layer which contacts a measurement terminal. It is not connected to the second electrode layer opposed to the other.
  • the thin film solar cell based on the second aspect of the present invention is formed on a substrate, a first electrode layer formed on the substrate, a photoelectric conversion layer formed on the first electrode layer, and a photoelectric conversion layer. And a second electrode layer.
  • the thin-film solar cell also includes a first separation groove that separates the first electrode layer, a contact line groove that connects the first electrode layer and the second electrode layer, and a second separation that separates at least the second electrode layer. And a groove portion.
  • the thin-film solar cell includes a conducting groove portion that penetrates the photoelectric conversion layer and the second electrode layer and is embedded with a conductive material in the output extraction region. The conductive groove is formed between adjacent contact line grooves so as to be sandwiched between the contact line grooves when seen in a plan view.
  • a thin film solar cell according to the third aspect of the present invention is formed on a substrate, a first electrode layer formed on the substrate, a photoelectric conversion layer formed on the first electrode layer, and a photoelectric conversion layer. And a second electrode layer.
  • the thin-film solar cell also includes a first separation groove that separates the first electrode layer, a contact line groove that connects the first electrode layer and the second electrode layer, and a second separation that separates at least the second electrode layer. And a groove portion.
  • the thin-film solar cell includes a plurality of conductive grooves that penetrate the photoelectric conversion layer and the second electrode layer and are embedded with a conductive material in the output extraction region.
  • the contact line groove portions are formed on both sides of all of the plurality of conduction groove portions so as to sandwich each of the plurality of conduction groove portions in a plan view.
  • the present invention it is possible to accurately measure the output of a thin film solar cell during the production of the thin film solar cell in which the area of the output extraction region is reduced to improve the conversion efficiency.
  • FIG. 4 is a cross-sectional view showing a state where a surface contact terminal is in contact with a second electrode layer at a normal position in a positive electrode output extraction region P in an intermediate output measurement step in the thin film solar cell of the same embodiment. Section showing a state in which the surface contact terminal is in contact with the second electrode layer in the range of the width W C and the range of the width W D of the positive electrode side output extraction region P in the intermediate output measurement step in the thin film solar cell of the same embodiment.
  • FIG. It is sectional drawing which shows the structure of the thin film solar cell which concerns on Embodiment 4 of this invention.
  • FIG. 4 is a cross-sectional view showing a state where a surface contact terminal is in contact with a second electrode layer at a normal position in a positive electrode output extraction region P in an intermediate output measurement step in the thin film solar cell of the same embodiment. Section showing a state in which the surface contact terminal is in contact with the second electrode layer in the range of the width W C and the range of the width W D of the positive
  • FIG. 4 is a cross-sectional view showing a state in which a point contact terminal is in contact with a second electrode layer at a normal position in a positive electrode output extraction region P in an intermediate output measurement step in the thin film solar cell of the same embodiment.
  • a cross-sectional view showing a state in which a point contact terminals in the range of the width W D of the positive electrode side output extraction region P is in contact with the second electrode layer.
  • FIG. 4 is a cross-sectional view showing a state in which a point contact terminal is in contact with a second electrode layer in a range of a width W C of a positive electrode output extraction region P in an intermediate output measurement process in the thin film solar cell of the same embodiment.
  • FIG. It is a top view which shows the structure of the integrated thin film solar cell described in patent document 1.
  • FIG. It is the figure seen from the XXV-XXV line arrow direction of FIG.
  • FIG. It is a comparison figure for explaining a subject, and is a sectional view showing the state where a point contact terminal is in contact with a thin film solar cell in a power generation field in an intermediate output measurement process in a thin film solar cell.
  • a comparison diagram for explaining a problem in the intermediate output measuring step in the thin film solar cell is a sectional view showing a state in which the point contact terminal is in contact with the second electrode layer in a range of the width W C. It is a comparison figure for explaining a subject, and is a section showing the state where a surface contact terminal is in contact with the 2nd electrode layer in the regular position of positive electrode side output extraction field P in the intermediate output measurement process in a thin film solar cell.
  • FIG. It is a comparison figure for explaining a subject, and is the state where a part of surface contact terminal is in contact with the 2nd electrode layer in the electric power generation field on the positive electrode side output extraction field P side in the intermediate output measurement process in a thin film solar cell.
  • FIG. 33 is a cross-sectional view of one example viewed from the direction of the arrow of XXXIII-XXXIII in FIG.
  • FIG. 33 is a cross-sectional view of another example viewed from the direction of the arrow XXXIV-XXXIV in FIG. 32.
  • FIG. 1 It is a comparison figure for explaining a subject, and is a section showing the state where a surface contact terminal is in contact with the 2nd electrode layer in the regular position of negative electrode side output extraction field N in the intermediate output measurement process in a thin film solar cell
  • FIG. 1 It is a comparison figure for explaining a subject, and is the state where a part of surface contact terminal is in contact with the 2nd electrode layer in the power generation field at the negative electrode side output extraction field N side in the intermediate output measurement process in a thin film solar cell
  • a surface contact terminal is in the range of width W N of negative electrode side output extraction region N, and the range of width W O and the 2nd electrode layer It is sectional drawing which shows the state which is contacting.
  • Embodiment 1 the manufacturing method of the thin film solar cell in Embodiment 1 based on this invention is demonstrated with reference to figures.
  • the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated.
  • FIG. 1 is a flowchart showing steps in a method for manufacturing a thin-film solar cell according to Embodiment 1 of the present invention.
  • a first separation groove is formed in a first electrode layer formed on a substrate (S101).
  • a photoelectric conversion layer is formed on the first electrode layer (S102).
  • Contact line grooves are formed in the photoelectric conversion layer (S103).
  • a second electrode layer is formed on the photoelectric conversion layer (S104).
  • a second separation groove is formed at least in the second electrode layer.
  • the output of the power generation region is measured by bringing the measurement terminal into contact with the second electrode layer (S106).
  • Conductive grooves are formed in the photoelectric conversion layer and the second electrode layer in the positive electrode side and negative electrode side output extraction regions (S107).
  • An output extraction electrode is formed by burying the conductive groove with a conductive material (S108).
  • a feature of the method for manufacturing a thin-film solar cell according to the present embodiment is that the step S106 is performed before the step S107. In addition, another process may be performed between each process.
  • FIG. 2 is a sectional view showing a state before step S101 in FIG.
  • a glass substrate is used as the substrate, but the material of the substrate is not particularly limited as long as it has translucency and insulating properties.
  • the material of the first electrode layer 2 is not limited to SnO 2 and may be any material that can be used as a conductive film of a thin film solar cell.
  • FIG. 3 is a cross-sectional view showing a state after step S101 in FIG.
  • the first electrode layer 2 was patterned using a fundamental wave of a YAG laser.
  • the first electrode layer 2 is separated into strips, and the first separation groove 5 is formed in the first electrode layer 2.
  • the substrate on which the first separation groove 5 was formed was ultrasonically cleaned with pure water.
  • a laser for removing tin oxide (SnO 2 ) a fundamental wave of a fiber laser or YVO 4 laser light may be used.
  • FIG. 4 is a cross-sectional view showing a state after step S102 in FIG.
  • an amorphous photoelectric conversion layer in which, for example, an a-Si: Hp layer, an a-Si: Hi layer, and an a-Si: Hn layer are sequentially stacked on the first electrode layer 2;
  • a photoelectric conversion layer 3 in which a microcrystalline photoelectric conversion layer in which a ⁇ c-Si: Hp layer, a ⁇ c-Si: Hi layer, and a ⁇ c-Si: Hn layer are sequentially stacked is formed.
  • a top cell in which a p layer, an i layer, and an n layer made of an amorphous silicon thin film are stacked in this order from the first electrode layer 2 side.
  • a middle cell in which a p layer, an i layer and an n layer made of an amorphous silicon thin film are laminated in this order on the top cell, and a p layer, an i layer made of a microcrystalline silicon thin film on the middle cell, and You may use what laminated
  • the number of photoelectric conversion layers may be three or more.
  • Each of the photoelectric conversion layers may be composed of the same type of silicon-based semiconductor, or may be composed of different types of silicon-based semiconductor.
  • Each photoelectric conversion layer from the first photoelectric conversion layer to the third photoelectric conversion layer includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, and each semiconductor layer is formed of a silicon-based semiconductor. It may be.
  • Each semiconductor layer included in the photoelectric conversion layer may be composed of the same type of silicon-based semiconductor, or may be composed of different types of silicon-based semiconductor.
  • the p-type semiconductor layer and the i-type semiconductor layer may be formed of amorphous silicon, and the n-type semiconductor layer may be formed of microcrystalline silicon.
  • the p-type semiconductor layer and the n-type semiconductor layer may be formed of silicon carbide or silicon germanium, and the i-type semiconductor layer may be formed of silicon.
  • each of the p-type, i-type and n-type semiconductor layers may have a single layer structure or a multilayer structure. In the case of a multilayer structure, each layer may be composed of different types of silicon-based semiconductors.
  • amorphous silicon is a concept including “hydrogenated amorphous silicon”
  • microcrystalline silicon is a concept including “hydrogenated microcrystalline silicon”.
  • FIG. 5 is a cross-sectional view showing a state after step S103 in FIG.
  • the photoelectric conversion layer 3 was patterned using the second harmonic of a YVO 4 laser.
  • the contact line groove 6 is formed in the photoelectric conversion layer 3 by making the laser light incident from the glass substrate 1 side.
  • the second harmonic of the YVO 4 laser is used.
  • patterning may be performed using the second harmonic of the YAG laser.
  • FIG. 6 is a cross-sectional view showing the state after step S104 in FIG.
  • the second electrode layer 4 made of ZnO / Ag was formed on the photoelectric conversion layer 3 by, for example, magnetron sputtering.
  • the second electrode layer 4 was formed with a ZnO film thickness of about 50 nm and an Ag film thickness of about 150 nm.
  • a contact line for connecting the first electrode layer 2 and the second electrode layer 4 is formed in the contact line groove 6.
  • ZnO / Ag is used as the second electrode layer 4, but a highly light-transmitting film such as ITO (Indium Tin Oxide) or SnO 2 may be used instead of ZnO. Moreover, you may use metals with high reflectance, such as Al, instead of Ag. In the 2nd electrode layer 4, although it is not necessary to provide transparent conductive films, such as ZnO, the conversion efficiency of a thin film solar cell can be improved by providing a transparent conductive film.
  • FIG. 7 is a cross-sectional view showing a state after step S105 of FIG.
  • the second electrode layer 4 was patterned using the second harmonic of a YVO 4 laser.
  • the second separation groove portion 7 is formed in the photoelectric conversion layer 3 and the second electrode layer 4 by making the laser light incident from the glass substrate 1 side.
  • the second separation groove portion 7 is also formed in the photoelectric conversion layer 3, but the second separation groove portion 7 may be formed only in the second electrode layer 4.
  • FIG. 8 is a cross-sectional view showing a state in which an insulating region is formed around the thin film solar cell.
  • the laminate formed on the edge on the glass substrate 1 was removed using the fundamental wave of the YAG laser.
  • an insulating region 30 is formed around the thin film solar cell.
  • a YAG laser is used, but a mechanical processing method such as blasting may be used.
  • FIG. 9 is a cross-sectional view showing a state during step S106 in FIG.
  • a thin film solar cell was measured using a solar simulator device as an intermediate measurement.
  • the point contact terminal 20A is brought into contact with the second electrode layer 4 in the positive electrode side output extraction region P
  • the point contact terminal 20B is brought into contact with the second electrode layer 4 in the negative electrode side output extraction region N to output the power generation region. Measurements were made.
  • the first electrode layer 2 connected to the second electrode layer 4 in the positive electrode side output extraction region P through a contact line sandwiches the second separation groove 7 between the second electrode layer 4 in the positive electrode side output extraction region P. It is not connected to the opposing second electrode layer 4.
  • the first electrode layer 2 connected to the second electrode layer 4 in the negative electrode side output extraction region N through the contact line has the second separation groove 7 interposed in the second electrode layer 4 in the negative electrode side output extraction region N. It is connected to the second electrode layer 4 facing with the contact line through a contact line.
  • the point contact terminal 20A is brought into contact with the second electrode layer 4 in the positive electrode side output extraction region P, and the second electrode layer 4 in the negative electrode side output extraction region N is opposed to the second electrode layer 4 with the second separation groove 7 interposed therebetween. Even when the point contact terminal 20B is brought into contact with the two-electrode layer 4, the output of the power generation region can be measured.
  • the second electrode layer 4 in the negative electrode side output extraction region N and the second electrode layer 4 in the negative electrode side output extraction region N are opposed to each other with the second separation groove 7 interposed therebetween. This is because the electrode layer 4 is at the same potential because it is electrically connected.
  • the first electrode layer 2 connected to the second electrode layer 4 in the output extraction region through the contact line is connected to the second electrode layer 4 in the output extraction region.
  • the output of the power generation region is also obtained when the point contact terminal 20 is brought into contact with the second electrode layer 4 opposed to the separation groove portion 7. Can be measured.
  • FIG. 10 is a cross-sectional view showing a state after step S107 in FIG.
  • the second electrode layer 4 was patterned in the positive electrode side output extraction region P and the negative electrode side output extraction region N using the second harmonic of the YVO 4 laser.
  • Conductive grooves 8 are formed in the photoelectric conversion layer 3 and the second electrode layer 4 by making laser light incident from the glass substrate 1 side.
  • the second harmonic of the YVO 4 laser is used.
  • patterning may be performed using the second harmonic of the YAG laser.
  • FIG. 11 is a cross-sectional view showing a state after step S108 in FIG. As shown in FIG. 11, the conducting groove 8 was embedded with ultrasonic solder. An output extraction electrode was formed by forming a solder-plated copper foil on top of the ultrasonic solder.
  • FIG. 12 is a cross-sectional view showing a state where the thin film solar cell is sealed.
  • a vacuum laminating apparatus is used in a state where a sealing member 32 is disposed on the back side opposite to the glass substrate 1 with an adhesive member 31 made of transparent ethylene vinyl alcohol as a main raw material.
  • the thin film solar cell was sealed.
  • As the sealing member 32 a laminated film made of PET (polyethylene terephthalate) / Al / PET was used.
  • a terminal box was connected to the thin film solar cell, and the output of the thin film solar cell was measured by a solar simulator device as a final output measurement.
  • a solar simulator device As described above, in the manufactured 60000 thin film solar cells, no flaws were observed in the measurement results of the intermediate output measurement and the final output measurement. The reason for this will be described below.
  • FIG. 13A is a cross-sectional view showing a state of an intermediate output measurement step of a conventional thin film solar cell.
  • FIG. 13B is a cross-sectional view showing a state of the intermediate output measurement step of the thin-film solar cell of the present embodiment.
  • the intermediate output measurement is performed after the second separation groove portion 7 and the conduction groove portion 8 are formed. Therefore, in order to make an accurate measurement must be contacted to point contact terminal 20A to the second electrode layer 4 in the region of the width W B.
  • the width W B is about 150 [mu] m, it is not easy to contact accurately point contact terminal 20A in this position.
  • the intermediate output measurement is performed before the conduction groove 8 is formed. Therefore, in order to perform accurate measurement, the point contact terminal 20A may be brought into contact with the second electrode layer 4 in the region of the width W. As described above, the width W is about 1 mm, and it is not difficult to bring the point contact terminal 20A into contact with this position. Therefore, measurement errors due to variations in contact position between the point contact terminal 20A and the thin film solar cell can be reduced. As a result, accurate measurement can be performed in the intermediate output measurement.
  • FIG. 14 is a plan view showing the structure of the thin-film solar cell according to Embodiment 2 of the present invention.
  • the output extraction electrode is not shown for simplicity.
  • the conducting groove 8 is formed discontinuously at a predetermined interval in the length direction of the second separation groove 7.
  • Other configurations are the same as the structure of the thin-film solar cell of Embodiment 1, and thus description thereof will not be repeated.
  • the length M of the non-formation region 21 of the conducting groove 8 is preferably larger than the size of the contact portion of the terminal 20 used when the intermediate output measurement is performed with the thin film solar cell. In this way, when the intermediate output measurement is performed, the output of the power generation region can be accurately measured by measuring the terminal 20 in contact with the second electrode layer 4 in the non-formation region 21.
  • the thin-film solar cell of this embodiment is separated into strips, but may be separated into a lattice.
  • the non-formation region 21 needs to be formed.
  • FIG. 15 is a plan view showing a state in which a conduction groove is formed using a mask in the manufacturing process of the thin-film solar cell of the present embodiment.
  • the mask 12 is spaced apart on the second electrode layer 4 in the positive electrode side output extraction region P and the negative electrode side output extraction region N.
  • the continuous groove 8 is formed by laser irradiation.
  • the mask 12 is formed on the second electrode layer 4 in the non-formation region 21.
  • the material of the mask 12 is not particularly limited as long as the material does not transmit the laser and is resistant to the laser.
  • the formation of the non-forming region 21 may be performed in the process of forming the second separation groove 7 or after the process of forming the second separation groove 7.
  • a second harmonic of a YAG laser or a YVO 4 laser can be used.
  • the manufacturing method of the thin film solar cell of this embodiment includes the following steps.
  • a first separation groove 5 is formed in the first electrode layer 2 formed on the glass substrate 1.
  • a photoelectric conversion layer 3 is formed on the first electrode layer 2.
  • Contact line grooves 6 are formed in the photoelectric conversion layer 3.
  • a second electrode layer 4 is formed on the photoelectric conversion layer 3, and a contact line for connecting the first electrode layer 2 and the second electrode layer 2 is formed in the contact line groove 6.
  • the second separation groove 7 is formed at least in the second electrode layer 4. In the positive electrode side and negative electrode side output extraction regions P and N separated from the power generation region by the second separation groove portion 7, the conductive layer 9 penetrates the photoelectric conversion layer 3 and the second electrode layer 4 and is embedded in the conductive material 9.
  • the common groove portion 8 is formed discontinuously at intervals in the length direction of the second separation groove portion 7. Separation of the photoelectric conversion layer 3 by the second separation groove 7 enables cells to be connected in series.
  • the output of the power generation region is measured by bringing the measurement terminal into contact with the second electrode layer 4 in the positive electrode side and negative electrode side output extraction regions P and N.
  • An output extraction electrode 10 is formed by embedding the conducting groove 8 with a conductive material 9. Through this process, a thin film solar cell is completed.
  • the conducting groove 8 may be formed by laser irradiation discontinuously by a laser program.
  • the Q switch of the laser oscillator so-called electric mask
  • the conduction groove 8 and the non-formation region 21 can be formed by discontinuously irradiating the laser.
  • FIG. 16 is a cross-sectional view seen from the direction of the arrow XVI-XVI in FIG. As shown in FIG. 16, the conducting groove 8 is not formed in the cross section including the non-formation region 21.
  • the first electrode layer 2 is formed on the glass substrate 1.
  • a photoelectric conversion layer 3 is formed on the first electrode layer 2.
  • a second electrode layer 4 is formed on the photoelectric conversion layer 3.
  • a first separation groove 5 for separating the first electrode layer 2 is formed.
  • a contact line that connects the first electrode layer 2 and the second electrode layer 4 is formed.
  • a second separation groove 7 that separates at least the second electrode layer 4 is formed. The power generation region and the positive electrode side and negative electrode side output extraction regions P and N are separated by the second separation groove portion 7.
  • a conduction groove portion 8 is formed which penetrates the photoelectric conversion layer 3 and the second electrode layer 4 and is embedded with a conductive material 9 inside.
  • the conducting groove portion 8 is formed discontinuously at intervals in the length direction of the second separation groove portion 7.
  • FIG. 17 is a cross-sectional view showing the structure of a thin-film solar cell according to Embodiment 3 of the present invention.
  • the conduction groove 8 is formed between the contact line grooves 6 adjacent to each other so as to be sandwiched between the contact line grooves 6 in a plan view. It is formed between.
  • the contact line groove 6 is formed on the center side of the thin film solar cell and the contact line groove 13 is formed outside the thin film solar cell so as to sandwich the conduction groove 8 in the positive output extraction region P.
  • a contact line groove 6 is formed on the center side of the thin film solar cell, and a contact line groove 14 is formed outside the thin film solar cell so as to sandwich the conduction groove 8 in the negative electrode side output extraction region N.
  • the first electrode layer 2 is formed on the glass substrate 1.
  • a photoelectric conversion layer 3 is formed on the first electrode layer 2.
  • a second electrode layer 4 is formed on the photoelectric conversion layer 3.
  • a first separation groove 5 for separating the first electrode layer 2 is formed.
  • Contact line grooves 6, 13, 14 for connecting the first electrode layer 2 and the second electrode layer 4 are formed.
  • a second separation groove 7 that separates at least the second electrode layer 4 is formed.
  • the power generation region and the positive electrode side and negative electrode side output extraction regions P and N are separated by the second separation groove portion 7.
  • a conduction groove portion 8 is formed which penetrates the photoelectric conversion layer 3 and the second electrode layer 4 and is embedded with a conductive material 9 inside.
  • An output extraction electrode 10 is formed by embedding the conductive groove 8 with a conductive material 9.
  • the conductive groove 8 is formed between the contact line groove 6 and the contact line groove 13 or the contact line groove 14 so as to be sandwiched between the contact line grooves 6, 13, 14 in a plan view. Is formed.
  • FIG. 18 is a cross-sectional view showing a state in which the surface contact terminal is in contact with the second electrode layer at a normal position of the positive electrode side output extraction region P in the intermediate output measurement step in the thin film solar cell of the present embodiment.
  • the conducting groove 8 is formed before the intermediate output measurement is performed.
  • the second electrode layer 4 and the first electrode layer 2 are electrically connected.
  • the surface contact terminals 22A in order to measure accurately the intermediate output measurement, it is necessary to contact with the second electrode layer 4 of the scope or width W D of the width W B.
  • FIG. 19 shows that the surface contact terminal is in contact with the second electrode layer in the range of the width W C and the width W D of the positive electrode output extraction region P in the intermediate output measurement step in the thin film solar cell of this embodiment. It is sectional drawing which shows a state. As shown in FIG. 19, in the range of the width W D, the first electrode layer 2 and the second electrode layer 4 is connected.
  • the surface contact terminals 22A are in the scope and width W D of the width W C of the positive electrode side output extraction region P in contact with the second electrode layer 4 is also possible to accurately measure the output of the power generation region Can do.
  • the contact line groove portions 13 and 14 are formed, and the contact line is formed in the contact line groove portions 13 and 14, so that the measurement error due to the variation in the contact position between the terminal 20 and the thin film solar cell. Can be reduced. Since other configurations are the same as those in the first or second embodiment, description thereof will not be repeated.
  • FIG. 20 is a cross-sectional view showing the structure of a thin-film solar cell according to Embodiment 4 of the present invention.
  • the contact line groove portions are formed on both sides of all the plurality of conduction groove portions so as to sandwich each of the plurality of conduction groove portions when viewed in a plan view. Is formed.
  • the contact line groove 6 is formed on the center side of the thin film solar cell and the contact line groove 13 is formed outside the thin film solar cell so as to sandwich the conduction groove 8 in the positive output extraction region P.
  • a contact line groove 15 is formed between the adjacent conductive grooves 8.
  • the contact line groove 15 is preferably formed in the same process as the contact line groove 6 in consideration of productivity.
  • the contact line groove 6 is formed on the center side of the thin film solar cell so as to sandwich the conduction groove 8 in the negative electrode side output extraction region N, and the contact line groove 14 is formed outside the thin film solar cell.
  • a contact line groove 15 is formed between the adjacent conductive grooves 8 formed. In the present embodiment, since four conductive groove portions 8 in the negative electrode side output extraction region N are formed, three contact line groove portions 15 in the negative electrode side output extraction region N are formed.
  • the first electrode layer 2 is formed on the glass substrate 1.
  • a first separation groove 5 is formed in the first electrode layer 2.
  • a photoelectric conversion layer 3 is formed on the first electrode layer 2.
  • a second electrode layer 4 is formed on the photoelectric conversion layer 3.
  • a first separation groove 5 for separating the first electrode layer 2 is formed.
  • Contact line grooves 6, 13, 14, and 15 connecting the first electrode layer 2 and the second electrode layer 4 are formed.
  • a second separation groove 7 that separates at least the second electrode layer 4 is formed. The power generation region and the positive electrode side and negative electrode side output extraction regions P and N are separated by the second separation groove portion 7.
  • a plurality of conductive grooves 8 that penetrates the photoelectric conversion layer 3 and the second electrode layer 4 and is embedded in the conductive material 9 are formed.
  • An output extraction electrode 10 is formed by embedding a plurality of conductive grooves 8 with a conductive material 9.
  • the contact line groove portions 6, 13, 14, and 15 are formed on both sides of all of the plurality of conduction groove portions 8 so as to sandwich each of the plurality of conduction groove portions 8 in plan view.
  • FIG. 21 is a cross-sectional view showing a state in which the point contact terminal is in contact with the second electrode layer at a normal position of the positive electrode side output extraction region P in the intermediate output measurement step in the thin film solar cell of this embodiment.
  • the conducting groove 8 is formed before the intermediate output measurement is performed.
  • the range of the width W B, in scope and breadth W D width W C, and the second electrode layer 4 and the first electrode layer 2 are electrically connected.
  • the point contact terminal 20A may be brought into contact with the second electrode layer 4 in the range of the width W in order to accurately measure in the intermediate output measurement.
  • Figure 22 is the intermediate output measuring step in the thin film solar cell of the present embodiment, a cross sectional view illustrating a state where point contact terminals in the range of the width W D of the positive electrode side output extraction region P is in contact with the second electrode layer is there.
  • FIG. 23 is a cross-sectional view showing a state in which the point contact terminal is in contact with the second electrode layer in the range of the width W C of the positive electrode side output extraction region P in the intermediate output measurement step in the thin film solar cell of this embodiment. is there.
  • the contact line groove portions 13, 14, 15 are formed, and the contact line is formed in the contact line groove portions 13, 14, 15, so that the contact position between the terminal 20 and the thin-film solar cell is improved. Measurement errors due to variations can be reduced. Since other configurations are similar to those of the first and second embodiments, description thereof will not be repeated.

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Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire à couches minces, comprenant : une étape (S101) dans laquelle une première tranchée d'isolation (5) est formée dans une première couche d'électrode (2) formée sur un substrat (1); une étape (S102) dans laquelle une couche de conversion photoélectrique (3) est formée sur la première couche d'électrode (2); une étape (S103) dans laquelle une rainure de ligne de contact (6) est formée dans la couche de conversion photoélectrique (3); une étape (S104) dans laquelle une seconde couche d'électrode (4) est formée sur la couche de conversion photoélectrique (3) et une ligne de contact, qui connecte les première et seconde couches d'électrode (2 et 4) est formée dans la rainure de ligne de contact (6); une étape (S105) dans laquelle une seconde tranchée d'isolation (7) est formée au moins dans la seconde couche d'électrode (4); une étape (S106) dans laquelle la sortie d'une région de production électrique est mesurée en amenant une borne de mesure au contact de la seconde couche d'électrode (4) dans une région d'extraction de sortie qui est isolée de la région de production électrique par la seconde tranchée d'isolation (7); une étape (S107) dans laquelle, dans la région d'extraction de sortie, une rainure de conduction (8) est formée dans la couche de conversion photoélectrique (3) et dans la seconde couche d'électrode (4); et une étape (S108) dans laquelle un matériau conducteur (9) est placé dans la rainure de conduction (8).
PCT/JP2011/057770 2010-04-08 2011-03-29 Cellule solaire à couches minces et procédé de fabrication pour celle-ci WO2011125641A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014222775A (ja) * 2011-10-13 2014-11-27 エルジー エレクトロニクス インコーポレイティド 薄膜太陽電池モジュール及び製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613851B2 (ja) * 1995-09-14 2005-01-26 株式会社カネカ 集積化薄膜太陽電池
JP2008140885A (ja) * 2006-11-30 2008-06-19 Mitsubishi Heavy Ind Ltd 太陽電池パネル製造システム及び太陽電池パネル製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613851B2 (ja) * 1995-09-14 2005-01-26 株式会社カネカ 集積化薄膜太陽電池
JP2008140885A (ja) * 2006-11-30 2008-06-19 Mitsubishi Heavy Ind Ltd 太陽電池パネル製造システム及び太陽電池パネル製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014222775A (ja) * 2011-10-13 2014-11-27 エルジー エレクトロニクス インコーポレイティド 薄膜太陽電池モジュール及び製造方法
US9246040B2 (en) 2011-10-13 2016-01-26 Lg Electronics Inc. Thin film solar cell module and method for manufacturing the same

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