JP2014222775A - 薄膜太陽電池モジュール及び製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 105
- 239000000853 adhesive Substances 0.000 claims abstract description 62
- 230000001070 adhesive effect Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000007769 metal material Substances 0.000 claims description 11
- 239000004840 adhesive resin Substances 0.000 claims description 8
- 229920006223 adhesive resin Polymers 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 5
- 239000012811 non-conductive material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 83
- 238000000034 method Methods 0.000 description 19
- 239000000969 carrier Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000010248 power generation Methods 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
Description
Claims (23)
- 基板と、
前記基板上部に位置する第1電極、前記第1電極上部に位置する第2電極、及び前記第1電極と前記第2電極の間に位置する光電変換部をそれぞれ含む複数のセルと、
前記複数のセルの中で第1最外郭セル及び第2最外郭セルの上部にそれぞれ配置されるリボンと、
前記第1最外郭セルと前記リボン及び前記第2最外郭セルと前記リボンの間にそれぞれ位置し、前記第1及び第2最外郭セルを前記リボンに電気的にそれぞれ接続する導電性接着部とを含み、
前記第1最外郭セルの第2電極と前記リボンの間に位置する導電性接着部は前記第1最外郭セルに含まれる第1電極、光電変換部及び第2電極それぞれと電気的に接続される第1接続部と、
前記第1最外郭セルの第2電極は前記第1最外郭セルの第1電極に電気的に接続される第2接続部を含む薄膜太陽電池モジュール。 - 前記第1最外郭セルの第1電極は隣接したセルの第1電極と一体に形成される、請求項1記載の薄膜太陽電池モジュール。
- 前記第1接続部は複数である、請求項1記載の薄膜太陽電池モジュール。
- 前記複数の第1接続部の幅は互いに異なる、請求項3記載の薄膜太陽電池モジュール。
- 前記複数の第1接続部の幅は前記第1最外郭セルと隣接したセルとの距離が近くなるほど増加する、請求項3記載の薄膜太陽電池モジュール。
- 前記第2接続部は複数である、請求項1記載の薄膜太陽電池モジュール。
- 前記複数の第2接続部の幅は互いに異なる、請求項6記載の薄膜太陽電池モジュール。
- 前記複数の第2接続部の幅は前記第1最外郭セルと隣接したセルとの距離が近くなるほど増加する、請求項6記載の薄膜太陽電池モジュール。
- 前記第1接続部及び前記第2接続部それぞれの幅は40μm乃至150μmの間である、請求項1記載の薄膜太陽電池モジュール。
- 前記導電性接着部は電気伝導性の金属物質を含む、請求項1記載の薄膜太陽電池モジュール。
- 前記複数のセルで生成された電力を回収する集電ボックスと、
前記複数のセル上部を横切って配置され前記集電ボックスと前記リボンを互いに接続するバスバー電極とをさらに含む、請求項1記載の薄膜太陽電池モジュール。 - 前記複数のセルと前記バスバー電極の間に位置する非伝導性物質の絶縁部とをさらに含む、請求項11記載の薄膜太陽電池モジュール。
- 前記光電変換部は少なくとも一つのp−i−n層を含む、請求項1記載の薄膜太陽電池モジュール。
- 前記第2最外郭セルの第2電極と前記リボンの間に位置する導電性接着部は前記第2最外郭セルに含まれる第2電極と電気的に接続され、前記第2最外郭セルに含まれる光電変換部及び第1電極とは電気的に接続されない、請求項1記載の薄膜太陽電池モジュール。
- 前記第1最外郭セルの第2電極は前記第1最外郭セルと隣接したセルの第1電極に電気的に接続され、
前記第2最外郭セルの第1電極は前記第2最外郭セルと隣接したセルの第2電極に電気的に接続される、請求項14記載の薄膜太陽電池モジュール。 - 前記第1最外郭セルの第2電極と前記リボンの間に位置する導電性接着部は前記第1最外郭セルに含まれる第2電極の上部面及び側面と互いに接触する、請求項1記載の薄膜太陽電池モジュール。
- 前記第1最外郭セルの第2電極と前記リボンの間に位置する導電性接着部は前記第1最外郭セルに含まれる光電変換部の側面と互いに接触する、請求項1記載の薄膜太陽電池モジュール。
- 前記第1最外郭セルの第2電極と前記リボンの間に位置する導電性接着部は前記第1最外郭セルに含まれる第1電極の上部の一部分と互いに接触する、請求項1記載の薄膜太陽電池モジュール。
- 前記導電性接着部は接着性樹脂及び接着性樹脂内に複数の導電性粒子を含む、請求項1記載の薄膜太陽電池モジュール。
- 複数のセルを含む太陽電池モジュールを製造する方法において、
基板の面上に第1電極層を形成した後、前記基板が部分的に露出するように前記第1電極層に第1スクライビングラインパターンを形成し、前記複数のセルそれぞれに含まれる複数の第1電極を形成する段階と、
前記複数の第1電極の面上に光電変換部層を形成した後、前記第1電極が部分的に露出するように第2スクライビングパターンを形成し、前記複数のセルそれぞれに含まれる複数の光電変換部を形成する段階と、
前記第2スクライビングパターン以外に、前記複数のセルの中で最外郭セルに含まれる光電変換部に対して前記第1電極が部分的に露出するように別途の第2スクライビングパターンを形成する段階と、
前記複数の光電変換部及び前記部分的に露出した複数の第1電極の上に第2電極層を形成した後、前記複数の第1電極が部分的に露出するように第3スクライビングパターンを形成し、前記複数のセルそれぞれに含まれる複数の第2電極を形成する段階と、
前記第3スクライビングパターン以外に、前記複数のセルの中で最外郭セルに含まれる前記第2電極に対して前記第1電極が部分的に露出するように別途の第3スクライビングパターンを形成する段階と、
を含む太陽電池モジュールの製造方法。 - 前記複数の第2電極を形成する段階において、
前記最外郭セルに含まれる第2電極は前記別途の第2スクライビングパターンによって形成された空間を通じて前記最外郭セルに含まれる第1電極と直接接触する、請求項20記載の太陽電池モジュールの製造方法。 - 前記別途の第3スクライビングパターンを形成した後、前記最外郭セルの上に導電性接着部を形成する段階をさらに含む、請求項20記載の太陽電池モジュールの製造方法。
- 前記導電性接着部を形成する段階で、前記導電性接着部は前記最外郭セルの第1電極と直接接触する、請求項22記載の太陽電池モジュールの製造方法。
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KR1020110104550A KR101779955B1 (ko) | 2011-10-13 | 2011-10-13 | 박막 태양 전지 모듈 |
KR10-2011-0104550 | 2011-10-13 |
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JP2014222775A true JP2014222775A (ja) | 2014-11-27 |
JP5908951B2 JP5908951B2 (ja) | 2016-04-26 |
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JP2014156184A Expired - Fee Related JP5908951B2 (ja) | 2011-10-13 | 2014-07-31 | 薄膜太陽電池モジュール及び製造方法 |
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EP3000131B1 (fr) * | 2013-05-23 | 2020-09-09 | Garmin Switzerland GmbH | Mono cellule photovoltaïque semi-transparente en couches minces |
JP6665464B2 (ja) * | 2015-09-25 | 2020-03-13 | Tdk株式会社 | 薄膜熱電素子 |
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JPH0983001A (ja) * | 1995-09-14 | 1997-03-28 | Kanegafuchi Chem Ind Co Ltd | 集積化薄膜太陽電池 |
JP2006165025A (ja) * | 2004-12-02 | 2006-06-22 | Nec Electronics Corp | 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法 |
JP2009088175A (ja) * | 2007-09-28 | 2009-04-23 | Sharp Corp | 薄膜太陽電池モジュールおよびその製造方法 |
WO2009139390A1 (ja) * | 2008-05-15 | 2009-11-19 | 株式会社アルバック | 薄膜太陽電池モジュール及びその製造方法 |
JP2010171127A (ja) * | 2009-01-21 | 2010-08-05 | Mitsubishi Electric Corp | 薄膜太陽電池およびその製造方法 |
JP2010211996A (ja) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | 電気接続部品 |
US20110036392A1 (en) * | 2009-08-14 | 2011-02-17 | Chien-Chung Bi | Thin-film solar cell module and a manufacturing method thereof |
JP2011114216A (ja) * | 2009-11-27 | 2011-06-09 | Toshiba Corp | 半導体装置の製造方法 |
WO2011125641A1 (ja) * | 2010-04-08 | 2011-10-13 | シャープ株式会社 | 薄膜太陽電池およびその製造方法 |
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EP1061589A3 (en) * | 1999-06-14 | 2008-08-06 | Kaneka Corporation | Method of fabricating thin-film photovoltaic module |
DE102008051469A1 (de) * | 2008-10-13 | 2010-04-15 | Malibu Gmbh & Co. Kg | Verfahren zum Kontaktieren von Dünnschicht-Solarzellen und Dünnschicht-Solarmodul |
JP2010272725A (ja) * | 2009-05-22 | 2010-12-02 | Mitsubishi Electric Corp | 薄膜太陽電池モジュールとその製造方法 |
US20110265857A1 (en) * | 2010-05-03 | 2011-11-03 | DuPont Apollo Ltd. | Monolithic integration of bypass diodes with a thin film solar module |
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2011
- 2011-10-13 KR KR1020110104550A patent/KR101779955B1/ko active IP Right Grant
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2012
- 2012-10-12 JP JP2012227283A patent/JP2013089963A/ja active Pending
- 2012-10-12 US US13/650,974 patent/US9246040B2/en not_active Expired - Fee Related
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Patent Citations (9)
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JPH0983001A (ja) * | 1995-09-14 | 1997-03-28 | Kanegafuchi Chem Ind Co Ltd | 集積化薄膜太陽電池 |
JP2006165025A (ja) * | 2004-12-02 | 2006-06-22 | Nec Electronics Corp | 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法 |
JP2009088175A (ja) * | 2007-09-28 | 2009-04-23 | Sharp Corp | 薄膜太陽電池モジュールおよびその製造方法 |
WO2009139390A1 (ja) * | 2008-05-15 | 2009-11-19 | 株式会社アルバック | 薄膜太陽電池モジュール及びその製造方法 |
JP2010171127A (ja) * | 2009-01-21 | 2010-08-05 | Mitsubishi Electric Corp | 薄膜太陽電池およびその製造方法 |
JP2010211996A (ja) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | 電気接続部品 |
US20110036392A1 (en) * | 2009-08-14 | 2011-02-17 | Chien-Chung Bi | Thin-film solar cell module and a manufacturing method thereof |
JP2011114216A (ja) * | 2009-11-27 | 2011-06-09 | Toshiba Corp | 半導体装置の製造方法 |
WO2011125641A1 (ja) * | 2010-04-08 | 2011-10-13 | シャープ株式会社 | 薄膜太陽電池およびその製造方法 |
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KR20130039895A (ko) | 2013-04-23 |
JP5908951B2 (ja) | 2016-04-26 |
JP2013089963A (ja) | 2013-05-13 |
KR101779955B1 (ko) | 2017-10-10 |
US20130092209A1 (en) | 2013-04-18 |
US9246040B2 (en) | 2016-01-26 |
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