WO2011121706A1 - Élément d'imagerie à infrarouges et dispositif d'imagerie à infrarouges - Google Patents

Élément d'imagerie à infrarouges et dispositif d'imagerie à infrarouges Download PDF

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Publication number
WO2011121706A1
WO2011121706A1 PCT/JP2010/055587 JP2010055587W WO2011121706A1 WO 2011121706 A1 WO2011121706 A1 WO 2011121706A1 JP 2010055587 W JP2010055587 W JP 2010055587W WO 2011121706 A1 WO2011121706 A1 WO 2011121706A1
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Prior art keywords
infrared
thermoelectric conversion
imaging device
infrared imaging
pixel
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PCT/JP2010/055587
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English (en)
Japanese (ja)
Inventor
浩大 本多
裕夫 竹村
飯田　義典
舟木　英之
和拓 鈴木
鎬楠 権
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株式会社 東芝
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Priority to PCT/JP2010/055587 priority Critical patent/WO2011121706A1/fr
Publication of WO2011121706A1 publication Critical patent/WO2011121706A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0831—Masks; Aperture plates; Spatial light modulators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Definitions

  • the present invention relates to an infrared imaging device and an infrared imaging device.
  • Infrared rays have the feature of being more permeable to smoke and fog than visible light, so infrared imaging is possible day and night.
  • infrared imaging can also obtain temperature information of a subject, it has a wide range of applications such as surveillance cameras and fire detection cameras in the defense field.
  • uncooled infrared imaging devices that do not require a cooling mechanism has become active.
  • An uncooled type or thermal type infrared imaging device converts incident infrared rays having a wavelength of about 10 ⁇ m into heat by an infrared absorption film, and changes the temperature of the heat sensitive part caused by the weakly converted heat into an electrical signal by some thermoelectric conversion element. Convert.
  • the thermal infrared imaging device obtains infrared image information by reading out this electrical signal.
  • an infrared imaging device using a silicon pn junction that converts a temperature change into a voltage change by applying a constant forward current is known (for example, see Patent Document 1).
  • This infrared imaging device has a feature that it can be mass-produced using a silicon LSI manufacturing process by using an SOI (Silicon-on-Insulator) substrate as a semiconductor substrate.
  • SOI Silicon-on-Insulator
  • the row selection function is realized by utilizing the rectification characteristics of the silicon pn junction that is a thermoelectric conversion element, there is also a feature that the pixel structure can be configured extremely simply.
  • One of the indexes representing the performance of the infrared imaging device is an equivalent noise temperature difference (NETD (Noise Equivalent Temperature Difference)) representing the temperature resolution of the infrared imaging device. It is important to reduce the NETD, that is, to reduce the detected temperature difference corresponding to noise. For this purpose, it is necessary to increase the sensitivity of the signal and reduce the noise.
  • NETD Noise Equivalent Temperature Difference
  • a thermal infrared imaging device detects a change in substrate temperature as a signal in order to detect a change in temperature of itself.
  • Patent Document 1 employs a method in which infrared insensitive pixels are arranged and an output signal thereof is used as a reference signal.
  • a metal film that reflects infrared light is formed in the vicinity of the incident surface of the infrared detection pixel to form an infrared insensitive pixel.
  • the passivation film on the incident side transmits infrared light as viewed from the metal film. There is a possibility that it may be absorbed and may not function as a completely insensitive pixel, and noise cannot be reduced.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide an infrared imaging device and an infrared imaging device capable of reducing noise.
  • An infrared imaging device includes a semiconductor substrate having a surface portion provided with a plurality of first recesses arranged on a matrix and at least one second recess, on the semiconductor substrate.
  • a plurality of detection pixels provided corresponding to the first recesses and detecting incident infrared rays, wherein each detection pixel absorbs the incident infrared rays and converts them into heat, and the first infrared absorption layer
  • a first thermoelectric conversion unit having a first thermoelectric conversion element that converts heat converted by the film into an electrical signal, and first and second support structures that support the first thermoelectric conversion unit above the corresponding first recesses
  • the first support structure portion has a first connection wiring connected to one end of the first thermoelectric conversion element, and the second support structure portion has one end connected to the first thermoelectric conversion element.
  • 2nd connection wiring connected to the other end of A plurality of detection pixels that are provided on the semiconductor substrate in correspondence with each row of the detection pixels, each connected to the other end of the first connection wiring of the detection pixel in the corresponding row.
  • a plurality of row selection lines for selecting detection pixels, and provided on the semiconductor substrate in correspondence with each column of the detection pixels, each connected to the other end of the second connection wiring of the detection pixel in the corresponding column A plurality of signal lines for reading out electrical signals from the detection pixels in the corresponding column and the semiconductor substrate corresponding to the second recess, and absorbing the incident infrared rays and converting them into heat.
  • thermoelectric conversion section having a second thermoelectric conversion element that converts the heat converted by the second infrared absorption film and the second infrared absorption film into an electric signal; and a second recess corresponding to the second thermoelectric conversion section. 3rd and 4th supporting upward A third infrared absorption film that is provided apart from the second thermoelectric conversion part so as to cover the holding structure part and covers the second thermoelectric conversion part and absorbs the incident infrared rays, and the third infrared absorption film provided on the semiconductor substrate And a first umbrella part having a joint part for joining the semiconductor substrate, the third support structure part has a third connection wiring having one end connected to one end of the second thermoelectric conversion element,
  • the fourth support structure section includes a reference pixel having a fourth connection wiring, one end of which is connected to the other end of the second thermoelectric conversion element.
  • An infrared imaging device includes a plurality of detection pixels arranged in a matrix on a semiconductor substrate and detecting incident infrared rays, and a reference formed on the semiconductor substrate and not sensitive to the incident infrared rays.
  • An infrared imaging device including pixels, a package on which the infrared imaging device is mounted, a window material for sealing the inside of the package, and a light shield provided so that an optical image of the incident infrared rays overlaps the reference pixel. And a section.
  • an infrared imaging device and an infrared imaging device capable of reducing noise.
  • FIG. 1 is a circuit diagram showing a configuration of an infrared imaging element according to a first embodiment of the present invention.
  • Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 1st specific example. Sectional drawing which shows the manufacturing process of the insensitive pixel of a 3rd specific example. Sectional drawing which shows the manufacturing process of a sensitive pixel. Sectional drawing which shows the manufacturing process of a sensitive pixel.
  • Sectional drawing which shows the manufacturing process of a sensitive pixel. Sectional drawing of the infrared imaging device of 2nd Embodiment.
  • the top view of the ceramic package which concerns on the infrared imaging device of 2nd Embodiment.
  • the top view which shows the window material which concerns on the infrared imaging device of 2nd Embodiment.
  • the top view which shows the window material which concerns on the infrared imaging device by the 1st modification of 2nd Embodiment.
  • the top view which shows the window material which concerns on the infrared rays imaging device by the 2nd modification of 2nd Embodiment.
  • Sectional drawing of the infrared imaging device by the 4th modification of 2nd Embodiment The top view which shows the window material which concerns on the infrared rays imaging device by the 4th modification of 2nd Embodiment.
  • the infrared imaging device has an infrared imaging device, and the configuration of the infrared imaging device is shown in FIG.
  • the infrared imaging device 1 of the present embodiment is formed on a semiconductor substrate (not shown), and includes an imaging region 10 including pixels arranged in a matrix, a readout circuit 30, a row selection circuit 40, and a column selection circuit 42. And.
  • the imaging region 10 includes six pixels 11 1 , 11 2 , 12 11 , 12 12 , 12 21 , and 12 22 arranged in 3 rows and 2 columns. In general, the imaging region usually includes more pixels, but in the present embodiment, it is assumed to be 6 pixels for convenience.
  • the pixels 11 1 , 11 2 arranged in the first row are insensitive pixels (also referred to as reference pixels) that do not have sensitivity to infrared rays, and the pixels 12 11 , 12 12 , arranged in the second row and the third row, Reference numerals 12 21 and 12 22 denote sensitive pixels (also referred to as infrared detection pixels) capable of detecting infrared rays.
  • Each pixel 11 1 , 11 2 , 12 11 , 12 12 , 12 21 , 12 22 includes at least one thermoelectric conversion element, for example, a diode 14 formed of a pn junction.
  • each diode 14 in the second row of sensitive pixel 12 11, 12 12 are connected to the row select line 16 1, the anode of each diode 14 of the third row of sensitive pixel 12 21, 12 22 It is connected to the row select line 16 2.
  • Each of the row selection lines 16 1 and 16 2 is sequentially selected by the row selection circuit 40, and a bias voltage Vd is applied to the selected row selection line.
  • the cathodes of the diodes 14 of the first row of sensitive pixels 12 11 and 12 21 are connected to the first column of vertical signal lines (hereinafter also simply referred to as signal lines) 18 1 , and the second row of sensitive pixels. 12 12, 12 22 of the cathode of each diode 14 is connected to the vertical signal line 18 2 of the second column.
  • the readout circuit 30 includes operational amplifiers 31 1 and 31 2 , feedback resistors 32 1 and 32 2 , and column selection transistors 34 1 and 34 2 .
  • One end of the signal line 18 1 in the first column is connected to the anode of the insensitive pixel 11 first diode 14 of the first column, the cathode of the insensitive pixels 11 first diode 14 of the first row at a constant potential Vs Retained.
  • One end of the signal line 18 2 of the second column is connected to an anode of a non-sensitivity pixel 11 and second diode 14 of the second column, the cathode constant potential of the second row of non-sensitivity pixel 11 and second diode 14 Held at Vs.
  • the other end of the signal line 18 1 in the first column are connected to the negative input terminal of the operational amplifier 31 1, the other end of the signal line 18 2 in the second column are connected to the negative input terminal of the operational amplifier 31 2.
  • the positive input terminals of the operational amplifiers 31 1 and 31 2 are connected to a common node 33.
  • Feedback resistor 32 1 is provided between the negative input terminal of the operational amplifier 31 1 and the output terminal, a feedback resistor 32 2 is provided between the output terminal and the negative input terminal of the operational amplifier 31 2.
  • the output terminal of the operational amplifier 32 1 is connected to the horizontal signal line 38 through column selection transistors 34 1, the output terminal of the operational amplifier 32 2 is connected to the horizontal signal line 38 through the column selection transistor 34 2.
  • the gates of the column selection transistors 34 1 and 34 2 are connected by a column selection circuit 42, and the column selection transistors 34 1 and 34 2 are turned on by being selected by the column selection circuit 42.
  • Row select line row selection circuit 40 selects, for example, by applying a bias voltage Vd to the row select line 16 1, and the diode 14 of the sensitive pixel 12 11, 12 12 of the row select line 16 1 is selected, the insensitive
  • the diode 14 of the sensitive pixels 12 21, 12 22 which is connected to the row select line 16 2 unselected, since all are reverse biased, and the row select line 16 2 unselected, signal lines 18 1 , it is separated from the 18 2. That is, the diode 14 may have a pixel selection function.
  • the pixel temperature rises.
  • the potential Vsl of the signal lines 18 1 and 18 2 is increased.
  • the temperature of the sensitive pixel changes by about 5 mK.
  • a diode (thermoelectric conversion element) of a sensitive pixel and a diode (thermoelectric conversion element) of an insensitive pixel are connected in series, and the node 33 is grounded. Only the current increase in the sensitivity pixel is amplified by the operational amplifiers 31 1 and 31 2 .
  • the outputs of the operational amplifiers 31 1 and 31 2 in each column are sequentially read out by the column selection transistors 34 1 and 34 2 .
  • the gate voltages of the column selection transistors 34 1 and 34 2 are sequentially supplied from the horizontal selection circuit 42, and the output voltages of the operational amplifiers 31 1 and 31 2 are sequentially output through the horizontal signal line 38.
  • the row selection line is alternately selected by the row selection circuit 40, and the temperature change of the subject is extracted as an electrical signal by the sensitive pixel connected to the selected row selection line.
  • the operational amplifier are amplified by the operational amplifier, and the amplified electric signals are sequentially read out to the horizontal signal line 38 by the column selection transistors 34 1 and 34 2 .
  • the differential signal with the insensitive pixel is always compared and output for all the sensitive pixels, in principle, no noise is held and no vertical stripe noise is generated.
  • FIGS. 2 is a plan view of the sensitive pixel 12
  • FIG. 3 is a cross-sectional view taken along the cutting line AA shown in FIG.
  • the sensitive pixel 12 is formed on an SOI substrate.
  • This SOI substrate includes a support substrate 101, a buried insulating layer (BOX layer) 102, and an SOI (Silicon-On-Insulator) layer made of silicon single crystal, and a recess 110 is formed on the surface portion.
  • the sensitive pixel 12 includes a thermoelectric conversion unit 13 formed in the SOI layer, support structure units 130a and 130b that support the thermoelectric conversion unit 13 above the recess 110, and an umbrella unit 200 that absorbs infrared rays. I have.
  • thermoelectric conversion unit 13 is formed so as to cover a plurality of (two in FIG. 2 and FIG. 3) diodes 14 connected in series, a wiring 120 connecting these diodes 14, and these diodes 14 and wirings 120.
  • Infrared absorbing film 124 is provided.
  • the support structure portion 130a includes a connection wiring 132a connected to one end of a series circuit including a diode having one end connected to the corresponding row selection line 16 and the other end connected in series, and an insulating film 134a covering the connection wiring 132a. And.
  • the other support structure 130b covers a connection wiring 132b connected to the other end of a series circuit composed of a diode having one end connected to the corresponding vertical signal line 18 and the other end connected in series, and the connection wiring 132b. And an insulating film 134b.
  • the umbrella unit 200 absorbs the infrared rays irradiated on the portions that cannot be absorbed by the infrared absorption film 124 of the thermoelectric conversion unit 13, that is, the support structures 130 a and 130 b, the row selection lines 16, and the signal lines 18. It is provided on the side on which infrared rays are incident.
  • the umbrella portion 200 overlaps with a portion that cannot be absorbed by the infrared absorption film 124, and an infrared absorption film 200 a provided above the thermoelectric conversion portion 13, and the infrared absorption film 200 a of the infrared absorption film 124 of the thermoelectric conversion portion 13. And a joint portion 200b to be joined.
  • the infrared absorption film 200a and the joint portion 200b are formed of the same type of material.
  • it is silicon dioxide, silicon nitride, or a laminated structure thereof having a good infrared absorption rate, and desirably has a thickness of, for example, 1 ⁇ m or more in order to sufficiently absorb infrared rays.
  • the infrared absorbing films 124 and 200a generate heat due to incident infrared rays.
  • the heat generated in the infrared absorption film 200a due to the incidence of infrared rays is transmitted to the infrared absorption film 124 of the thermoelectric conversion unit 13 through the joint portion 200b.
  • the diode 14 converts heat generated in the infrared absorption films 124 and 200a into an electric signal.
  • the support structure portions 130 a and 130 b are formed to be elongated so as to surround the periphery of the thermoelectric conversion portion 13. Thereby, the thermoelectric conversion part 13 is supported on an SOI substrate in the state substantially insulated from the SOI substrate.
  • the sensitive pixel 12 can store heat generated according to incident infrared rays and output a voltage based on the heat to the signal line.
  • the bias voltage Vd from the row selection line is transmitted to the diode 14 via the wiring 132a.
  • the signal that has passed through the diode 14 is transmitted to the vertical signal line through the wiring 132b.
  • the sensitive pixel 12 has the umbrella part 200, but it does not have to have the umbrella part 200 as shown in FIG.
  • FIG. 5 is a cross-sectional view of the insensitive pixel 11 of the first specific example.
  • the insensitive pixel 11 is formed on the SOI substrate in the same manner as the sensitive pixel 12, and has a configuration in which the umbrella portion 200 is replaced with the umbrella portion 210 in the sensitive pixel 12 shown in FIG.
  • the umbrella part 210 has an infrared absorption part 210a and a joint part 210b.
  • the infrared absorption unit 210 a is provided so as to cover the thermoelectric conversion unit 13 and has an opening 212.
  • the opening 212 preferably has a maximum diameter of 8 ⁇ m or less so that infrared rays do not pass through.
  • the “maximum diameter” means the maximum value of the length of a straight line connecting any two points on the circumference of the opening 212.
  • the joint 210b is not joined to the thermoelectric converter 13, and is a region other than the region where the thermoelectric converter 13 and the support structures 130a and 130b are formed, that is, the row selection line 16 Are joined to the region where the signal line 18 is formed and the region where the signal line 18 is formed.
  • a cavity 152 is formed between the umbrella part 210 and the thermoelectric conversion part 13.
  • the umbrella part 210 Since the umbrella part 210 has such a configuration, the infrared light incident on the insensitive pixel 11 is converted into heat in the infrared absorption part 210a, and this heat is transmitted to the row selection line 16 via the joint part 210b. The signal is transmitted to the formed region and the region where the signal line 18 is formed.
  • the region where the row selection line 16 is formed and the region where the signal line 18 is formed are substantially insulated from the thermoelectric conversion unit 13 by the support structures 130a and 130b. For this reason, the heat generated by the infrared rays incident on the infrared absorption unit 210 a is not transmitted to the thermoelectric conversion unit 13. That is, the infrared ray is absorbed by the infrared ray absorbing portion 210a and becomes insensitive to the infrared ray.
  • the insensitive pixel of the first specific example has the opening 212 above the central region of the thermoelectric conversion unit 13
  • the insensitive pixel 11 of the second specific example shown in FIG. A plurality of openings 212 a and 212 b may be provided above a region that does not overlap 13.
  • the number of openings 212a and 212b can be arbitrary, and unlike the first specific example, the size may exceed 8 ⁇ m as long as it does not overlap with the thermoelectric converter 13.
  • the second specific example does not reach the thermoelectric converter 13 and is insensitive to the infrared light.
  • thermoelectric conversion unit 13 when the infrared absorption unit 210a cannot absorb, the thermoelectric conversion unit 13 as in the insensitive pixel 11 of the third specific example illustrated in FIG. It is preferable to provide a reflective layer 125 that reflects infrared light through the infrared absorption film 124 on the wiring 120.
  • the reflective layer 125 can be formed simultaneously with the formation of the row selection line 16 and the signal line 18 by using the same material as that of the row selection line 16 and the signal line 18.
  • a plurality of diodes 14 are formed on the SOI of an SOI substrate having a support substrate 101, a buried insulating layer 102, and an SOI layer. Subsequently, the diode 14 is covered with a first insulating film that absorbs infrared rays, and contacts and wirings 120 connected to the diode 14 are formed in the first insulating film. At this time, simultaneously with the formation of the wiring 120, the wirings 132a and 132b of the support structures 130a and 130b, the first layer wiring of the row selection line 16, and the first layer wiring of the signal line 18 are formed.
  • the wiring 120, 132a, 132b and the first layer wiring are covered with a second insulating film that absorbs infrared rays, and the second layer wiring of the row selection line 16 and the signal line 18 is formed on the second insulating film.
  • the second insulating layer is covered with a third insulating film that absorbs infrared rays, and the upper surface of the third insulating film is planarized.
  • the first to third insulating films thus formed serve as the infrared absorption film 124.
  • the openings 140a, 140b, 140c, and 140d are provided in the infrared absorption film 124 by using a lithography technique, so that the thermoelectric conversion unit 13, the support structure units 130a and 130b, the region where the row selection line 16 is formed, and Separated into regions where signal lines are formed (FIG. 9).
  • the openings 140a, 140b, 140c, and 140d have the bottom buried insulating layer 102 removed so that the surface of the support substrate 101 is exposed at the bottom.
  • a sacrificial layer 145 is formed so as to fill the openings 140a, 140b, 140c, and 140d.
  • the sacrificial layer 145 is removed later, it is desirable that the sacrificial layer 145 be made of silicon dioxide or the like, which is a material of the infrared absorption film 124, and polyimide or amorphous silicon having etching selectivity.
  • the sacrifice layer 145 is patterned, and the sacrifice layer 145 on the row selection line 16 and the signal line 18 is removed.
  • the patterning is performed using a lithography process and anisotropic etching.
  • an infrared absorption film 210 is formed so as to cover the sacrificial layer 145. Thereafter, as shown in FIG. 13, the infrared absorption film 210 is patterned to form an opening 212 in the infrared absorption film 210. Thereby, the infrared absorption film 210 becomes the umbrella part 210. Patterning for forming the opening 212 is performed using a lithography process and anisotropic etching.
  • thermoelectric conversion part 13 is formed between the umbrella part 210 and the thermoelectric conversion part 13.
  • a part of the support substrate 101 is etched by the etchant, and a recess 110 is formed in the support substrate 101 (FIG. 5).
  • the thermoelectric conversion part 13 is supported above the recessed part 110 by the support structure parts 130a and 130b.
  • the second layer wiring of the row selection line 16 and the second of the signal line 18 are formed.
  • the reflective layer 125 is formed (FIG. 15). Subsequent processes are manufactured using the same processes as those of the insensitive pixels of the first specific example.
  • the insensitive pixel manufacturing process the same process as the insensitive pixel formation is performed until the sacrifice layer 145 shown in FIG. 10 is formed. Subsequently, as shown in FIG. 16, by patterning the sacrificial layer 145, an opening 147 in which the infrared absorption film 124 is exposed on the bottom surface is formed in a region where the thermoelectric conversion unit 13 is formed in the sacrificial layer 145. Thereafter, an infrared absorption film 200 is formed on the entire surface so as to fill the opening 147 (FIG. 17). Subsequently, as shown in FIG. 18, the infrared absorption film 200 is patterned.
  • the infrared absorption film 200 becomes the umbrella part 200.
  • the sacrifice layer 145 is removed by an etchant, and a part of the support substrate 101 is etched to form a recess 110 in the support substrate 101 (FIG. 3).
  • the thermoelectric conversion part 13 is supported above the recessed part 110 by the support structure parts 130a and 130b.
  • a type infrared imaging device can be realized, and by comparing these pixels and detecting a difference, only a signal that is not influenced by the substrate temperature and that depends on the intensity of the incident infrared light can be output. Thereby, noise can be reduced.
  • the readout circuit 30 having the configuration shown in FIG. 1 is provided as the readout circuit, but it is sufficient that the difference between the sensitive pixel and the insensitive pixel can be detected.
  • a readout circuit other than the readout circuit 30 having the configuration shown in the figure may be used.
  • insensitive pixels are provided for each signal line, but it is sufficient that at least one insensitive pixel is provided in the imaging region.
  • the plurality of sensitive pixels 12 are provided in the imaging region, but one sensitive pixel and one insensitive pixel may be provided. In this case, it becomes a single pixel infrared detector.
  • the pixel uses a diode as a thermoelectric conversion element that converts heat into an electric signal, but may be a resistor.
  • a black reference signal is obtained by forming a light shielding frame that shields visible light adjacent to a photoelectric conversion film.
  • a light-shielding frame (black portion) covered with, for example, aluminum is provided at the end of the photosensitive pixel.
  • the infrared imaging device is used as an infrared image sensor, even if a black portion (insensitive pixel in the infrared imaging device) similar to that of a CCD or CMOS image sensor is formed in the infrared imaging device, it is 8 ⁇ m to 12 ⁇ m. With infrared rays having a wavelength, heat is transferred to the pixels by radiation. For this reason, there is a problem that the pixels are exposed to light and it becomes impossible to obtain a black reference signal.
  • insensitive pixels are generally provided directly in an infrared imaging device, but since infrared rays are heat rays, they may not be sufficiently shielded, and infrared rays may leak into the pixels slightly.
  • FIGS. 19 is a cross-sectional view of the infrared imaging device of the second embodiment
  • FIG. 20 is a plan view when the infrared imaging device is mounted on a ceramic package.
  • the infrared imaging element is mounted on a ceramic package. That is, as shown in FIG. 19, the infrared imaging element 300 having the insensitive pixels 302 is fixed to the die 312 of the ceramic package 310 by die bonding.
  • the ceramic package 310 is provided with a plurality of terminals 314 and pads 316 that are electrically connected to these terminals 314 for electrical connection to the outside (see FIGS. 19 and 20).
  • the infrared imaging device 300 is electrically connected to the pad 316 of the package 310 by the bonding wire 318.
  • the ceramic package on which the infrared imaging element is mounted is moved into the vacuum chamber and placed in an atmosphere of 1.0 ⁇ 10 ⁇ 1 Torr or less, and for example, a window material 320 made of Si is placed on the ceramic package. Sealed.
  • the window member 320 is provided with a sealing portion 322 for sealing.
  • the sealing portion 322 is formed by depositing a metal such as Au so that sealing is easy.
  • an AR coating portion (anti-reflection preventing film) 324 is coated on the inner side of the sealing portion 322 so that infrared rays are easily transmitted.
  • a light shielding part 326 is provided adjacent to the AR coating part 324.
  • the light shielding portion 326 is formed by depositing a metal film such as Al so that an infrared wavelength of 8 ⁇ m to 12 ⁇ m is shielded.
  • the light shielding portion 326 is formed with high accuracy so that the optical image overlaps the insensitive pixel 302 formed on the infrared imaging device 300.
  • the infrared rays are shielded by the light-shielding portion 326 provided on the window member 320 and the insensitive pixels 302 provided on the infrared imaging element 300.
  • the transmittance of each is a product of the respective transmittances. Therefore, if the transmittance of the insensitive pixel 302 is 1.0 ⁇ 10 ⁇ 3 and the transmittance of the light-shielding portion 326 is 1.0 ⁇ 10 ⁇ 4 , the total becomes 1.0 ⁇ 10 ⁇ 7 and shields infrared rays. Can do.
  • the distance between the window 310 and the infrared imaging device 300 depends on the thickness of the ceramic package to be used, but it is very close to about 0.35 mm in practical use. For this reason, the optical images of the insensitive pixel 302 and the light shielding unit 326 substantially overlap, but if necessary, a pixel that is completely overlapped is used as an insensitive pixel without using a pixel with insufficiently overlapping boundary portions. By using it, a more complete reference signal can be obtained.
  • the insensitive pixels used in the second embodiment may be the insensitive pixels 11 shown in FIGS. 5 to 7 of the first embodiment, and the umbrella portion 210 is removed from these insensitive pixels 11. It may be a conventional well-known insensitive pixel. For example, either a thermal insensitive pixel or an optical insensitive pixel can be used. The thermal insensitive pixel or the optical insensitive pixel will be described later.
  • a sensitive pixel in which the optical images of the light shielding portion 326 overlap may be used as the insensitive pixel without providing the insensitive pixel in the infrared imaging device.
  • the infrared imaging device according to the first modification will be described with reference to FIG.
  • the light shielding part 326 is provided along one side of the four sides of the AR coating part 324.
  • the infrared imaging device according to the first modification has a configuration provided so as to surround the AR coating portion 324. With such a configuration, only a thermal image of a truly necessary subject can be formed on the infrared imaging element 300, unnecessary heat rays can be shielded, and a more reliable reference signal can be obtained.
  • the infrared imaging device of the second modification example is shown in FIG.
  • the portion 328 is provided in the window member 320.
  • the getter portion 328 is a metal film mainly composed of zirconium (Zr) and is usually formed by vapor deposition.
  • the getter unit 328 has an effect of adsorbing this gas and maintaining the degree of vacuum when the gas causing the degree of vacuum is generated.
  • a light shielding unit 326 is provided between the getter unit 328 and the AR coating unit 324.
  • the material of the getter portion 328 itself does not transmit infrared rays, it is not necessary to form a metal film as the light shielding portion 326, and the light shielding portion 326 can be formed of the getter portion 328 as shown in FIG. . In this way, the manufacturing process is reduced and the area of the getter portion 328 is increased, so that the getter effect can be further enhanced.
  • the light shielding portion 326 is formed by forming a metal film that shields infrared rays on the window member 320 itself.
  • the light shielding part 327 made of a thin piece such as a metal that shields infrared rays is sandwiched between the window member 320 and the ceramic package at the time of sealing. As shown, it can also be formed by placing it on the window material 320. If constituted like this 4th modification, the process of vapor deposition can be reduced and it will become possible to form shade part 327 by a simpler method.
  • insensitive pixels are provided in advance on the infrared imaging device 300, and light shielding portions 326 and 327 are provided on the window member 320.
  • the infrared ray can be shielded by simply forming a metal film on the window member 320 or sandwiching a thin piece of metal or the like. Therefore, it is possible to form the insensitive pixel portion on the infrared imaging device 300 without particularly forming the insensitive pixel in the infrared imaging device.
  • the pixel pitch common to the infrared imaging device 300 is 22 ⁇ m, and if it is 20 times, it is 0.44 mm or less. This value is a value at which the influence of adjacent pixels is halved.
  • the insensitive pixel portion a pixel that is not more than one boundary pixel but can be used as an insensitive pixel can be used. By doing this, it is possible to omit the step of forming insensitive pixels on the infrared imaging device, and there is an advantage that the step is further simplified.
  • FIG. 27 is a cross-sectional view of the insensitive pixel 11A of this specific example.
  • the insensitive pixel 11A is formed on the SOI substrate in the same manner as the sensitive pixel 12. However, unlike the case of the sensitive pixel 12, the recess 110 is not formed in the region of the SOI substrate where the insensitive pixel 11A is formed.
  • the insensitive pixel 11A includes a plurality of (two in FIG. 27) diodes 14 formed in the SOI layer of the SOI substrate and connected in series, a wiring 120 connecting these diodes 14, and one end having a constant potential.
  • connection wiring 132a connected to one end of a series circuit composed of a diode connected to the Vs power line and the other end connected in series, and a diode connected at one end to the corresponding vertical signal line and connected at the other end in series
  • Connecting wire 132b connected to the other end of the series circuit composed of the above, and an insulating film 126 formed so as to cover these diode 14, wire 120, and connecting wires 132a and 132b.
  • the thermally insensitive pixel 11A configured in this manner, the heat generated by the diode 14 diffuses to the surrounding insulating film 126, the buried insulating layer 102, and the bulk substrate (not shown). That is, the thermal conductance between the diode 14 and the surrounding structure is higher than that of the sensitive pixel 12.
  • the insensitive pixel 11 ⁇ / b> A of this specific example does not have the concave portion 110 and therefore does not have a heat storage function. Therefore, the thermal insensitive pixel 11A of this specific example reflects the temperature of the SOI substrate.
  • Such a thermally insensitive pixel is also called a substrate temperature measuring pixel.
  • FIG. 28 is a cross-sectional view of the optical insensitive pixel 11B of this specific example.
  • the insensitive pixel 11 ⁇ / b> B of this specific example is formed on an SOI substrate in which the concave portion 110 is formed on the surface portion, like the sensitive pixel 12.
  • the insensitive pixel 11 ⁇ / b> A includes a reflective portion 13 ⁇ / b> A formed in the SOI layer, and support structure portions 140 a and 140 b that support the reflective portion 13 ⁇ / b> A above the recess 110.
  • the reflection portion 13A includes a plurality of (two in FIG.
  • the support structure 130a includes a connection wiring 132a connected to one end of a series circuit composed of a diode having one end connected to a power supply line having a constant potential Vs and the other end connected in series, and an insulating film covering the connection wiring 132a 134a.
  • the other support structure 130b includes a connection wiring 132b connected to the other end of a series circuit composed of a diode having one end connected to a corresponding vertical signal line and the other end connected in series, and an insulation covering the connection wiring 142b. And a film 134b.
  • the optically insensitive pixel 11B having such a configuration is different from the sensitive pixel 12 in that the infrared reflecting film 126 is included in the infrared absorbing film 124. Since this optical insensitive pixel 11B reflects infrared rays, it is insensitive to infrared rays. In other respects, the structure is the same as that of the sensitive pixel 12, so that the reference pixel is more suitable than the substrate temperature measurement pixel (thermal insensitive pixel) 11A.
  • the Joule heat component generated when the diode 14 is energized does not exist in the thermally insensitive pixel 11A and is different from the sensitive pixel 12 in this respect, but in the optical insensitive pixel 11B, It has the same temperature component except the temperature change by infrared rays.
  • the infrared reflection film 124 may be formed in the same layer as the wiring layer that forms the operational amplifiers 201 and 202. In this case, the manufacturing process can be shortened and the cost can be reduced.

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Abstract

L'invention porte sur un élément d'imagerie à infrarouges et un dispositif d'imagerie à infrarouges, tous deux pouvant réduire les bruits. De manière spécifique, l'invention porte sur de multiples pixels détecteurs qui sont disposés dans un état de matrice sur un substrat semi-conducteur et peuvent détecter un rayon infrarouge incident. Chacun des pixels détecteurs comprend : une première section de conversion thermoélectrique qui comprend un premier film d'absorption de rayons infrarouges apte à absorber le rayon infrarouge incident et à convertir le rayon infrarouge incident absorbé en chaleur et un premier élément de conversion thermoélectrique apte à convertir la chaleur convertie par le premier film d'absorption de rayons infrarouges en un signal électrique; de multiples pixels détecteurs (12); une deuxième section de conversion thermoélectrique qui comprend un deuxième film d'absorption de rayons infrarouges disposé sur le substrat semi-conducteur et apte à absorber le rayon infrarouge incident et à convertir le rayon infrarouge incident absorbé en chaleur et un deuxième élément de conversion thermoélectrique apte à convertir la chaleur convertie par le deuxième film d'absorption de rayon infrarouge en un signal électrique; et une première section formant parasol (210) qui comprend un troisième film d'absorption de rayons infrarouges disposé à l'écart de la seconde section de conversion thermoélectrique de façon à recouvrir la seconde section de conversion thermoélectrique et apte à absorber le rayon infrarouge incident et une section de joint disposée sur le substrat semi-conducteur et apte à assembler le troisième film d'absorption de rayons infrarouges au substrat semi-conducteur.
PCT/JP2010/055587 2010-03-29 2010-03-29 Élément d'imagerie à infrarouges et dispositif d'imagerie à infrarouges WO2011121706A1 (fr)

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WO2019234215A1 (fr) * 2018-06-08 2019-12-12 Lynred Dispositif et procédé de compensation de la chaleur parasite dans une caméra infrarouge

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JPH10318829A (ja) * 1997-05-20 1998-12-04 Ishizuka Denshi Kk 赤外線センサ
JP2001215152A (ja) * 2000-02-03 2001-08-10 Mitsubishi Electric Corp 赤外線固体撮像素子
JP2002071452A (ja) * 2000-08-29 2002-03-08 Nec Corp 熱型赤外線検出器
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WO2019234215A1 (fr) * 2018-06-08 2019-12-12 Lynred Dispositif et procédé de compensation de la chaleur parasite dans une caméra infrarouge
FR3082385A1 (fr) * 2018-06-08 2019-12-13 Ulis Dispositif et procede de compensation de chaleur parasite dans une camera infrarouge
US11792536B2 (en) 2018-06-08 2023-10-17 Lynred Device and method for parasitic heat compensation in an infrared camera

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