WO2011118847A1 - 領域温度制御構造体 - Google Patents
領域温度制御構造体 Download PDFInfo
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- WO2011118847A1 WO2011118847A1 PCT/JP2011/058155 JP2011058155W WO2011118847A1 WO 2011118847 A1 WO2011118847 A1 WO 2011118847A1 JP 2011058155 W JP2011058155 W JP 2011058155W WO 2011118847 A1 WO2011118847 A1 WO 2011118847A1
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- 239000000463 material Substances 0.000 claims abstract description 43
- 238000012545 processing Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 17
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- RQMIWLMVTCKXAQ-UHFFFAOYSA-N [AlH3].[C] Chemical compound [AlH3].[C] RQMIWLMVTCKXAQ-UHFFFAOYSA-N 0.000 claims description 3
- CYKMNKXPYXUVPR-UHFFFAOYSA-N [C].[Ti] Chemical compound [C].[Ti] CYKMNKXPYXUVPR-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 3
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 22
- 238000012546 transfer Methods 0.000 description 15
- 238000005192 partition Methods 0.000 description 13
- 125000004122 cyclic group Chemical group 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OKTJSMMVPCPJKN-YPZZEJLDSA-N carbon-10 atom Chemical compound [10C] OKTJSMMVPCPJKN-YPZZEJLDSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
Definitions
- the present invention relates to a region temperature control structure having regions where the surface temperatures are controlled to different temperatures.
- the mounting surface is divided into a plurality of annular temperature regions and controlled.
- a susceptor that supports a wafer in each annular temperature region is known.
- a region temperature control structure whose surface is controlled to a plurality of temperature regions, such as a susceptor that supports a wafer in each annular temperature region, or an assembly structure having a plurality of assembly temperature region members adjusted to different temperatures
- a susceptor that supports a wafer in each annular temperature region
- an assembly structure having a plurality of assembly temperature region members adjusted to different temperatures
- a heat insulating material is disposed between adjacent regions, Or the technique which comprises the adjacent area
- a hot spot not only inhibits the temperature uniformity of the region adjusted and controlled to a predetermined temperature, but also causes a decrease in thermal efficiency.
- An object of the present invention is a structure having two or more regions that are controlled at different temperatures, suppresses heat conduction along the arrangement direction of each region, maintains a temperature difference, and arranges each region.
- An object of the present invention is to provide a region temperature control structure capable of ensuring smooth heat conduction and suppressing the occurrence of hot spots with respect to heat input from a direction crossing the direction.
- the region temperature control structure of the present invention includes two or more regions whose surface temperatures are controlled at different temperatures and a heat conduction difference disposed between the two or more regions.
- An anisotropic material layer wherein the thermal conductivity anisotropic material layer has a thermal conductivity along a direction in which the two or more regions are arranged in a direction intersecting with the direction in which the two or more regions are arranged. It is characterized by being smaller than the thermal conductivity.
- the present invention there are two or more regions whose surface temperatures are controlled to different temperatures, and a thermally conductive anisotropic material layer disposed between the two or more regions.
- the conductive anisotropic material layer has two or more regions because the thermal conductivity along the arrangement direction of the two or more regions is smaller than the thermal conductivity in the direction intersecting the arrangement direction of the two or more regions.
- the heat transfer along the array direction is suppressed to maintain the temperature difference, and the heat input from the direction intersecting the array direction of two or more regions ensures smooth heat conduction and is hot. Spot generation can be suppressed.
- the thermally conductive anisotropic material layer has the relative relationship between the heat conduction along the arrangement direction of the two or more regions and the heat conduction in the direction crossing the arrangement direction. It functions as a heat insulating layer for heat conduction along the arrangement direction of two or more regions, and functions as a heat conduction layer for heat conduction in a direction intersecting the arrangement direction of the two or more regions. preferable.
- the ratio of the thermal conductivity in the direction intersecting the arrangement direction of the two or more regions to the thermal conductivity along the arrangement direction of the two or more regions in the thermally conductive anisotropic material layer is preferably 7 or more.
- the thermally conductive anisotropic material layer is preferably made of a composite material selected from titanium-carbon, aluminum-carbon fiber, titanium-aluminum, and glassy carbon-carbon.
- the two or more regions are formed of a thermally conductive isotropic material.
- the region temperature control structure is a plate-like body in which the two or more regions are arranged in a predetermined direction, and the heat conduction anisotropic material layer has a thickness of the plate-like body. It is preferable to penetrate in the direction.
- a temperature adjusting unit is provided in each of the two or more regions, and the thermally conductive anisotropic material layer is disposed between adjacent temperature adjusting units.
- the temperature adjusting means is an annular medium flow path through which a heat exchange medium flows, a Peltier element, or a resistance heating body.
- the region temperature control structure is any one of a mounting table, an upper electrode plate, and a deposit shield of a substrate processing apparatus.
- FIG. 4 is a diagram showing characteristics with respect to heat conduction in a horizontal radial direction in the annular boundary member shown in FIGS. 3A to 3D.
- FIG. 4 is a diagram showing characteristics with respect to heat conduction in a vertical direction in the annular boundary member shown in FIGS. 3A to 3D.
- FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a region temperature control structure according to an embodiment of the present invention is applied as a constituent member.
- this substrate processing apparatus performs a predetermined plasma etching process on a wafer.
- the substrate processing apparatus 10 includes a chamber 11 that accommodates a wafer W, and a disc-shaped susceptor 12 on which the wafer W is placed is disposed in the chamber 11.
- a side exhaust path 13 is formed by the inner wall of the chamber 11 and the side surface of the susceptor 12.
- An exhaust plate 14 is disposed in the middle of the side exhaust path 13.
- the exhaust plate 14 is a plate-like member having a large number of through holes, and functions as a partition plate that partitions the inside of the chamber 11 into an upper part and a lower part.
- Plasma is generated in an upper portion (hereinafter referred to as “processing chamber”) 15 inside the chamber 11 partitioned by the exhaust plate 14 as described later.
- an exhaust pipe 17 that exhausts gas in the chamber 11 is connected to a lower portion 16 (hereinafter referred to as “exhaust chamber (manifold)”) inside the chamber 11.
- exhaust chamber exhaust chamber
- the exhaust plate 14 captures or reflects plasma generated in the processing chamber 15 to prevent leakage to the manifold 16.
- the exhaust pipe 17 is connected to a TMP (Turbo Molecular Pump) and a DP (Dry Pump) (both not shown), and these pumps evacuate the chamber 11 to reduce the pressure to a predetermined pressure.
- the pressure in the chamber 11 is controlled by an APC valve (not shown).
- a first high-frequency power source 18 is connected to the susceptor 12 in the chamber 11 via a first matching unit 19, and a second high-frequency power source 20 is connected to the susceptor 12 via a second matching unit 21.
- One high frequency power supply 18 applies a relatively low frequency, for example, 2 MHz bias high frequency power to the susceptor 12
- the second high frequency power supply 20 applies a relatively high frequency, for example, 60 MHz plasma generating high frequency power to the susceptor. 12 is applied.
- the susceptor 12 functions as an electrode.
- the first matching unit 19 and the second matching unit 21 reduce the reflection of the high frequency power from the susceptor 12 to maximize the application efficiency of the high frequency power to the susceptor 12.
- An electrostatic chuck 23 having an electrostatic electrode plate 22 inside is disposed on the susceptor 12.
- the electrostatic chuck 23 has a step and is made of ceramics or the like.
- a DC power source 24 is connected to the electrostatic electrode plate 22, and when a positive DC voltage is applied to the electrostatic electrode plate 22, the surface of the wafer W on the electrostatic chuck 23 side (hereinafter referred to as “back surface”). ) Generates a negative potential, resulting in a potential difference between the electrostatic electrode plate 22 and the back surface of the wafer W, and the wafer W is attracted and held on the electrostatic chuck 23 by the Coulomb force or the Johnson-Rahbek force resulting from the potential difference. Is done.
- a focus ring 25 is placed on the horizontal portion of the step of the electrostatic chuck 23 so as to surround the wafer W attracted and held on the electrostatic chuck 23.
- the focus ring 25 is made of, for example, silicon (Si) or silicon carbide (SiC).
- annular medium flow path extending in the circumferential direction described later is provided inside the susceptor 12.
- a low-temperature heat exchange medium such as cooling water or Galden (registered trademark) is circulated and supplied to the annular medium flow path from a chiller unit (not shown) through a medium pipe.
- the susceptor 12 cooled by the heat exchange medium cools the wafer W and the focus ring 25 via the electrostatic chuck 23.
- the use of the annular medium flow path is not limited to cooling, and may be maintained at room temperature or heated. Therefore, the flow medium flowing through the annular medium flow path may be any medium that is generally used as a heat exchange medium, and the annular medium flow path is used as a heat exchange annular medium flow path.
- a plurality of heat transfer gas supply holes 28 are opened in a portion of the electrostatic chuck 23 where the wafer W is adsorbed and held (hereinafter referred to as “adsorption surface”).
- the heat transfer gas supply hole 28 is connected to a heat transfer gas supply unit (not shown) via a heat transfer gas supply line 29, and the heat transfer gas supply unit transfers He (helium) gas as the heat transfer gas to the heat transfer gas.
- the gas is supplied to the gap between the suction surface and the back surface of the wafer W through the gas supply hole 28.
- the He gas supplied to the gap between the suction surface and the back surface of the wafer W effectively transfers the heat of the wafer W to the electrostatic chuck 23.
- the shower head 30 is disposed on the ceiling of the chamber 11 so as to face the susceptor 12 and the processing space S of the processing chamber 15.
- the shower head 30 includes an upper electrode plate 31, a cooling plate 32 that detachably supports the upper electrode plate 31, and a lid 33 that covers the cooling plate 32.
- the upper electrode plate 31 is made of a disk-like member having a large number of gas holes 34 penetrating in the thickness direction, and is made of Si or SiC that is a semiconductor.
- a buffer chamber 35 is provided inside the cooling plate 32, and a processing gas introduction pipe 36 is connected to the buffer chamber 35.
- the upper electrode plate 31 of the shower head 30 is grounded.
- the processing gas supplied from the processing gas introduction pipe 36 to the buffer chamber 35 is introduced into the processing chamber 15 through the gas holes 34 of the upper electrode plate 31, and the introduced processing is performed.
- the gas is excited by high-frequency power for plasma generation applied from the second high-frequency power source 20 to the inside of the processing chamber 15 via the susceptor 12 to become plasma. Ions in the plasma are attracted toward the wafer W by a high frequency power source for bias applied to the susceptor 12 by the first high frequency power source 18, and the wafer W is subjected to a plasma etching process.
- each component of the substrate processing apparatus 10 is controlled by a CPU of a control unit (not shown) provided in the substrate processing apparatus 10 according to a program corresponding to the plasma etching process.
- the surface of the susceptor 12 is divided into a center area and an edge area surrounding the center area. It is adjusted to be lower than the temperature of At this time, in order to prevent a decrease in thermal efficiency due to heat conduction occurring at the annular boundary between the center area and the edge area of the susceptor 12, it is conceivable to arrange a heat insulating material at the boundary between the center area and the edge area. .
- the heat insulating material can prevent the movement of heat between the center area and the edge area, it also functions as a heat insulating material against heat input from above due to generation of plasma in the processing space S. There is a problem that a hot spot is formed in the upper part of the heat insulating material, whereby the radical density in the processing space S is not uniform, and consequently the thermal efficiency cannot be improved.
- the inventor of the present invention relates to heat conduction along the arrangement direction of each region between adjacent regions and heat in a direction crossing the arrangement direction of each region in a region temperature control structure whose surface is controlled by a plurality of region temperatures.
- the region temperature control structure includes two or more regions whose surface temperatures are controlled to different temperatures, and a heat conduction anisotropic disposed between the two or more regions.
- FIG. 2 is a cross-sectional view showing a schematic configuration of an example of the region temperature control structure according to the embodiment of the present invention.
- the region temperature control structure 40 constituting a part of the susceptor 12 includes a first annular temperature region 41 and a second annular temperature region 42 arranged adjacent to each other in the horizontal radial direction in FIG. 2.
- the main body 45 having the structure, the first annular medium flow path 43 as the first temperature adjusting means provided in the first annular temperature region 41, and the second annular temperature region 42 provided in the second annular temperature region 42. 2, an annular boundary member 46 (heat conducting anisotropic material) disposed between the second annular medium flow path 44 as the temperature adjusting means, and the first annular temperature region 41 and the second annular temperature region 42. Layer).
- the structure body 45 is made of a heat conductive isotropic material, for example, carbon.
- the arrangement direction of the regions adjusted to different temperatures is referred to as the horizontal radial direction
- the direction intersecting the region arrangement direction is referred to as the vertical direction.
- the annular boundary member 46 has a T-shaped cross section perpendicular to the flow direction of the heat exchange medium in the annular medium flow paths 43 and 44 (shown as a section in FIGS. 3A to 3D), and has a T-shaped cross section.
- a vertical portion (hereinafter referred to as a “partition portion”) is disposed between the first annular temperature region 41 and the second annular temperature region 42, and both ends of the horizontal portion having a T-shaped cross section are in the first annular medium flow. It arrange
- annular boundary members 46a to 46d are applied as the annular boundary member 46, respectively.
- 3A to 3D are perspective views showing an annular boundary member disposed between the first annular temperature region 41 and the second annular temperature region 42 in FIG.
- the annular boundary member 46a in FIG. 3A has, for example, a T-shaped horizontal section having a length of 10 mm, a width of 5 mm, a partition section having an overall length of 10 mm, and a width of 1.7 mm.
- the annular boundary member 46a is made of a heat conductive isotropic material, for example, carbon, in which the entire T-shaped cross section isotropically exhibits heat conductivity.
- the annular boundary member 46b in FIG. 3B has, for example, a T-shaped horizontal section with a length of 10 mm, a width of 5 mm, a partition section with a total length of 10 mm, and a width of 0.5 mm.
- the horizontal portion is made of carbon, and all the partition portions are made of a heat insulating material, for example, titanium.
- the annular boundary member 46c shown in FIG. 3C has the same T-shaped cross section as that of the annular boundary member 46a shown in FIG. 3A.
- the horizontal portion is made of carbon and all the partition portions are made of a heat insulating material such as titanium.
- the annular boundary member 46c is different from the annular boundary member 46a of FIG. 3A in that a heat insulating material layer having a predetermined width, for example, 0.1 mm width is provided on the partition portion at a predetermined interval, for example, 0.3 mm interval. Regarding (horizontal radial direction), for example, five layers are provided.
- titanium applied to the partition portion in FIG. 3B is used as the heat insulating material.
- the partition portion of the annular boundary member 46c has a property as a heat conduction anisotropic material (hereinafter referred to as “graded material”), and functions as a heat insulating material for heat conduction in the horizontal radial direction, for example, in the vertical direction.
- graded material a heat conduction anisotropic material
- heat conduction for example, it functions as a heat conduction material.
- the annular boundary member 46d in FIG. 3D has the same dimensions as the annular boundary member 46a in FIG. 3A in the dimensions of the T-shaped cross section, and the entire T-shaped cross section is made of carbon.
- the annular boundary member 46d is different from the annular boundary member 46a of FIG. 3A in that a heat insulating material layer having a predetermined width, for example, 0.1 mm width is provided at a predetermined interval, for example, 0.3 mm interval, on the entire horizontal portion and partition portion. A large number of points are provided in the horizontal radial direction.
- This annular boundary member 46d has a T-shaped cross section as a whole and has a property as an inclined material, and functions as a heat insulating material, for example, for heat conduction in the horizontal radial direction, It functions as a heat conduction material.
- FIG. 4 is a diagram showing characteristics with respect to heat conduction in the horizontal radial direction in the annular boundary member shown in FIGS. 3A to 3D.
- the vertical axis indicates the temperature (K) of the region
- the horizontal axis indicates the distance from the boundary surface (0) between the first annular temperature region 41 and the second annular temperature region 42.
- the structure using the annular boundary member 46a of FIG. 3A rises as the surface temperature of the first annular temperature region 41 is pulled by the surface temperature of the second annular temperature region 42, as indicated by a broken line.
- the surface temperature of the second annular temperature region 42 is lowered by being pulled by the surface temperature of the first annular temperature region 41, and the surface temperature of the first annular temperature region 41 and the second annular temperature region 41 are reduced.
- the boundary with the surface temperature of 42 is unknown. Since the first annular temperature region 41 and the second annular temperature region 42 are both made of a heat conducting isotropic material as described above, the surface temperature and the internal temperature in each region are uniform. Conceivable. Therefore, hereinafter, the surface temperature and the internal temperature of each region are not particularly distinguished, and may be simply referred to as the temperature of the region.
- the structure using the annular boundary member 46b of FIG. 3B has a clear temperature boundary between the first annular temperature region 41 and the second annular temperature region 42, and the annular boundary member It can be seen that 46 b functions as a heat insulating material for heat conduction along the arrangement direction of the first annular temperature region 41 and the second annular temperature region 42.
- the structure using the annular boundary member 46c of FIG. 3C is similar to the structure using the annular boundary member 46b of FIG. 3B in the first annular temperature region 41 and the second annular temperature. It can be seen that the temperature boundary with the region 42 is clear, and the annular boundary member 46c functions as a heat insulating material for heat conduction along the region arrangement direction.
- the temperature difference between the first annular temperature region 41 and the second annular temperature region 42 is the annular boundary members 46b and 46c. It can be seen that the function as a heat insulating material for heat conduction along the region arrangement direction is increased. Thereby, when the annular boundary member 46d is used, the cooling effect of the first heat exchange medium flowing through the first annular medium flow path 43 and the second heat exchange medium flowing through the second annular medium flow path 44 is improved. It is expressed effectively.
- annular boundary member 46b, the annular boundary member 46c, and the annular boundary member 46d are suitable as the annular boundary member that maintains the temperature difference between the first annular temperature region 41 and the second annular temperature region 42. I understand that there is.
- FIG. 5 is a diagram showing characteristics with respect to heat conduction in the vertical direction in the annular boundary member of FIGS. 3A to 3D.
- the vertical axis indicates the temperature (K) of the region
- the horizontal axis indicates the distance from the boundary surface (0) between the first annular temperature region 41 and the second annular temperature region 42.
- the structure to which the annular boundary member 46a is applied has a smooth movement of heat in the vertical direction, and the surface temperature of the structure body 45 is almost uniform at 309 (K). . This is because the entire annular boundary member 46a is made of a heat conductive isotropic material, and isotropic heat conductivity is exhibited.
- the upper part of the annular boundary member 46b is a hot spot higher than the surrounding temperature. This is because the heat insulating material layer arranged in the partition portion functions as a heat insulating material even for heat conduction in the vertical direction, and a temperature singular point is formed in the upper portion of the annular boundary member 46b.
- the temperature at the corresponding portion of the annular boundary member 46b is shown in the upper part of the annular boundary member 46c, although the temperature is slightly higher than the surrounding part. It can be said that it is sufficiently low compared to. Therefore, it can be seen that in the structure to which the annular boundary member 46c is applied, the inclined member constituting the partition portion functions not as a heat insulating material but as a heat conducting material for heat conduction in the vertical direction.
- the structure to which the annular boundary member 46d is applied does not generate hot spots, but the heat diffusion in the vertical direction is totally inhibited, and the surface of the structure body 45 The overall temperature is higher than that of a structure to which another annular boundary member is applied.
- the annular boundary member 46d functions as a heat insulating material that is weak against heat conduction in the vertical direction.
- Table 1 summarizes the evaluation of the heat insulating property in the horizontal radial direction and the heat conductivity in the vertical direction in the annular boundary members 46a to 46d shown in FIGS. 3A to 3D.
- ⁇ indicates that the property is good
- ⁇ indicates that it is not good but is not defective
- x indicates that it is not good.
- the heat insulation in this Embodiment means that heat is hard to be transmitted and does not mean that heat is not transmitted at all.
- the temperature difference between the first annular temperature region 41 and the second annular temperature region 42 is determined.
- An inclined material whose rate is smaller than the thermal conductivity in the vertical direction in other words, an inclined material that functions as a heat insulating material for heat conduction in the horizontal radial direction and functions as a heat conducting material for heat conduction in the vertical direction. It can be seen that it should be arranged.
- the thermal conductivity along the horizontal radial direction is vertical between the regions.
- An inclined material smaller than the thermal conductivity along is arranged.
- FIG. 6 is a cross-sectional view showing a schematic configuration of a susceptor as a region temperature control structure according to the first embodiment of the present invention.
- the susceptor 12 is provided in a susceptor body 55 having a center area 51 as a first annular temperature region and an edge area 52 as a second annular temperature region, and in the center area 51 of the susceptor body 55.
- the first annular medium flow path 53 and the second annular medium flow path 54 provided in the edge area 52 and the first annular medium flow path 53 and the second annular medium flow path 54 are disposed.
- the inclined member 56 made of the thermally conductive anisotropic material.
- the susceptor body 55 is made of, for example, metallic aluminum, which is an isotropic material for heat conduction.
- the susceptor 12 has a disk shape, and its diameter is, for example, 320 to 400 mm, and its thickness is 20 to 50 mm. These values vary depending on the size of the wafer W placed on the susceptor 12. Needless to say.
- a wafer W is placed on the upper surface of the susceptor 12 via an electrostatic chuck 57, and a focus ring 58 is disposed so as to surround the wafer W attracted and held by the electrostatic chuck 57.
- the center area 51 of the susceptor 12 is cooled by a relatively high temperature heat exchange medium flowing in the first annular medium flow path 53, and the edge area 52 is relatively low temperature heat exchange flowing in the second annular medium flow path 54. Cooled by the medium.
- the inclined member 56 is located between the first annular medium flow path 53 and the second annular medium flow path 54, and the susceptor body 55 is disposed in the thickness direction at the boundary between the center area 51 and the edge area 52. It arrange
- the temperature of the wafer W placed on the susceptor 12 having such a configuration flows through the temperature of the center area 51 and the edge area 52 on the surface of the susceptor 12, and consequently the first annular medium flow path 53 in the center area 51. It depends on the medium temperature and the medium temperature flowing through the second annular medium flow path 54 in the edge area 52.
- the susceptor 12 of FIG. 6 is disposed in the chamber 11 of the substrate processing apparatus 10 of FIG. 1, and a heat exchange medium of 323 (K), for example, is circulated through the first annular medium flow path 53, thereby
- a heat exchange medium of 308 (K) is circulated through the path 54 to introduce a processing gas into the processing chamber 15 and to apply high-frequency power for plasma generation from the second high-frequency power supply 20 via the susceptor 12.
- the surface of the center area 51 of the susceptor 12 is slightly higher than 323 (K), for example, 324 (K), and the surface of the edge area 52 is 308 It is slightly higher than (K), for example, 309 (K).
- the conduction of heat along the horizontal radial direction in the susceptor 12 having the center area 51 and the edge area 52 that are adjusted and controlled to different temperatures is suppressed, and the temperature difference between the two areas is maintained.
- smooth heat transfer can be ensured to prevent the generation of hot spots, thereby improving the thermal efficiency.
- the inclined member 56 is penetrated in the thickness direction of the susceptor body 55, a large heat insulating effect is obtained with respect to the heat conduction in the horizontal radial direction. Since the mutual interference of the exchange medium can be minimized, energy loss can be suppressed.
- the susceptor 12 in this embodiment is effective when maintaining the temperature difference between the center area 51 and the edge area 52 on the susceptor surface and improving the thermal efficiency of the entire susceptor.
- the thickness of the inclined member 56 in the horizontal radial direction is determined by the degree of thermal insulation required between the center area 51 and the edge area 52. That is, when strong heat insulation is required, the thickness of the inclined member 56 is increased, and when it is sufficient to obtain weak heat insulating property, the thickness of the inclined member 56 is decreased. As a result of increasing the thickness of the inclined member 56, the side surfaces of the inclined member 56 can be brought into contact with the side surfaces of the first annular medium channel 53 and the second annular medium channel 54.
- the inclined member 56 is preferably formed of a material having a thermal expansion coefficient equivalent to that of the susceptor body 55 or a material capable of absorbing a difference in thermal expansion from an adjacent member.
- the two annular temperature regions adjusted and controlled to different temperatures are the center area 51 and the edge area 52.
- the different annular temperature regions are not limited to two, but three or more. It may be.
- the inclined member 56 functions as a heat insulating material for heat conduction in the horizontal radial direction and functions as a heat conducting material for heat conduction in the vertical direction.
- a heat insulating material for heat conduction in the horizontal radial direction
- a heat conducting material for heat conduction in the vertical direction.
- aluminum (Al) aluminum
- carbon fiber titanium-aluminum and glassy carbon-carbon.
- the thermal conductivity in the horizontal radial direction and the thermal conductivity in the vertical direction of the inclined member 56 are determined by the relative relationship with each other.
- the heat conductivity in the heat transfer direction is 10 (W / (m ⁇ K)) and the heat conductivity in the easy heat transfer direction is 200 (W / (M ⁇ K))
- the heat conductivity in the easy heat transfer direction is 200 (W / (M ⁇ K)
- they are also 150 (W / (m ⁇ K)) and 1000 (W / (m ⁇ K)), respectively, and in the case of glassy carbon and carbon 10 (W / (m ⁇ K)) and 200 (W / (m ⁇ K)), respectively, and in the case of titanium and aluminum, 10 (W / (m ⁇ K)) and 150 (W / (m), respectively. ⁇ K)).
- the ratio of the thermal conductivity in the vertical direction to the thermal conductivity in the horizontal radial direction of the inclined member 56 may be selected so as to be approximately 7
- the temperature adjusting means provided in the center area 51 and the edge area 52 is an annular medium flow path through which the heat exchange medium flows has been described.
- the temperature adjusting means It is not limited to the annular medium flow path, and may be a thermoelectric element (for example, a Peltier element), other heaters, for example, a resistance heating body.
- a thermoelectric element for example, a Peltier element
- other heaters for example, a resistance heating body.
- FIG. 7 is a cross-sectional view showing a modification of the susceptor of FIG.
- this susceptor 62 differs from the susceptor 12 of FIG. 6 in that instead of the inclined member 56 penetrating in the thickness direction of the susceptor body 55, from the upper surface of the susceptor body 55 to the intermediate point in the thickness direction. This is the point that an extending slanting member 66 is provided.
- the susceptor 62 of this modification is effective when it is desired to secure a temperature difference between the center area 51 and the edge area 52 on the susceptor surface even if the thermal efficiency of the entire susceptor is reduced to some extent.
- FIG. 8 is a cross-sectional view showing a deposit shield (hereinafter referred to as “annular deposition shield”) as a region temperature control structure according to the second embodiment of the present invention.
- the annular deposit shield is provided in the chamber of the substrate processing apparatus, and is intended to prevent deposits from being deposited by setting the surface temperature to a certain level.
- the surface temperature is 400 (K) to 450 ( K).
- the annular deposition shield applied in this way is a region temperature control structure.
- annular deposition shield 75 is provided on the side wall of the chamber 11 of the substrate processing apparatus 10.
- the annular deposit shield 75 is made of, for example, an aluminum material that exhibits isotropic thermal conductivity.
- the annular deposit shield 75 is divided into a low temperature area 71 and a high temperature area 72, and a low temperature annular medium flow path 73 is provided in the low temperature area 71, and a high temperature annular medium flow path 72 is provided in the high temperature area 72. Is provided.
- An inclined member 76 penetrating in the thickness direction of the annular deposit shield 75 is disposed at a boundary portion between the low temperature area 71 and the high temperature area 72.
- the wafer W placed on the upper surface of the susceptor 12 via the electrostatic chuck 23 is subjected to a predetermined plasma treatment, and the annular deposit shield 75 is applied.
- a 308 (K) heat exchange medium is circulated through the low temperature annular medium flow path 73 and a 400 (K) heat exchange medium is circulated through the high temperature annular medium flow path 74, a low temperature area is obtained.
- the surface temperature of 71 is, for example, 310 (K)
- the surface temperature of the high-temperature area 72 is, for example, 398 (K), and the temperature difference between the two is kept good. At this time, no hot spot is formed on the inclined member 76 due to heat input from the processing space S caused by plasma.
- a temperature difference between the low temperature area 71 and the high temperature area 72 is ensured, and a hot spot is not formed even with respect to heat input from the processing space S caused by plasma. It is possible to conduct uniformly.
- FIG. 9 is a cross-sectional view showing an upper electrode plate as a region temperature control structure according to a third embodiment of the present invention.
- the upper electrode plate is a constituent member of a shower head that supplies a processing gas to the processing space S, and is an electrode that generates high-frequency power in the processing space S to excite the processing gas and generate plasma.
- a region temperature control structure is formed.
- an upper electrode plate 85 which is a constituent member of the shower head 30 provided in the chamber 11 of the substrate processing apparatus 10 is a thermally conductive isotropic material, for example, a diameter of 300 to 500 mm ⁇ and a thickness of Si. It has a disk shape of 5 to 10 mm, and faces the wafer W placed on the upper surface of the susceptor 12 via the processing space S via the electrostatic chuck 23.
- the upper electrode plate 85 includes an electrode plate center area 81 and an electrode plate edge area 82 that face the center area 51 and the edge area 52 shown in FIG. 6 of the susceptor 12, respectively.
- An inclined member 86 is arranged at the boundary of the edge area 82 so as to penetrate in the thickness direction.
- the electrode plate center area 81 and the electrode plate edge area 82 in the upper electrode plate 85 having such a configuration are adjusted to different temperatures, respectively, like the center area 51 and the edge area 52 of the susceptor 12 in FIG. 9 receives heat input from below in FIG. 9 due to the generation of plasma, but since the inclined member 86 is disposed between the electrode plate center area 81 and the electrode plate edge area 82, the electrode plate center area 81 and the electrode plate edge While maintaining the temperatures of the areas 82 at different temperatures, the heat input accompanying the generation of plasma in the processing space S can be evenly received by the lower surface of the upper electrode plate 85 in FIG. 9, thereby forming hot spots. Can be avoided.
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Abstract
Description
Claims (9)
- 表面温度がそれぞれ異なる温度に制御される2つ以上の領域と、
前記2つ以上の領域相互間に配置された熱伝導異方性材料層とを有し、
前記熱伝導異方性材料層は、前記2つ以上の領域の配列方向に沿った熱伝導率が、前記2つ以上の領域の配列方向に交差する方向における熱伝導率よりも小さいことを特徴とする領域温度制御構造体。 - 前記熱伝導異方性材料層は、前記2つ以上の領域の配列方向に沿った熱伝導と配列方向に交差する方向における熱伝導との相対的な関係において、前記2つ以上の領域の配列方向に沿った熱伝導に対しては断熱層として機能し、前記2つ以上の領域の配列方向に交差する方向における熱伝導に対しては熱伝導層として機能することを特徴とする請求項1記載の構造体。
- 前記熱伝導異方性材料層における前記2つ以上の領域の配列方向に沿った熱伝導率に対する前記2つ以上の領域の配列方向に交差する方向における熱伝導率の比が7以上であることを特徴とする請求項1記載の構造体。
- 前記熱伝導異方性材料層は、チタン−カーボン、アルミニウム−カーボンファイバ、チタン−アルミニウム及びガラス状カーボン−カーボンから選択される複合材からなることを特徴とする請求項1記載の構造体。
- 前記2つ以上の領域は、熱伝導等方性材料で形成されていることを特徴とする請求項1記載の構造体。
- 前記領域温度制御構造体は、前記2つ以上の領域が所定方向に配列された板状体であり、前記熱伝導異方性材料層は、前記板状体を厚さ方向に貫通していることを特徴とする請求項1記載の構造体。
- 前記2つ以上の領域には、それぞれ温度調整手段が設けられており、前記熱伝導異方性材料層は、隣接する温度調整手段相互間に配置されていることを特徴とする請求項1記載の構造体。
- 前記温度調整手段は、熱交換媒体が流通する環状媒体流路、ペルチェ素子、又は抵抗加熱体であることを特徴とする請求項7記載の構造体。
- 前記領域温度制御構造体は、基板処理装置の載置台、上部電極板及びデポジットシールドのうちのいずれか1つであることを特徴とする請求項1記載の構造体。
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EP11759647.8A EP2551894B1 (en) | 2010-03-25 | 2011-03-24 | Region temperature-controlled structure |
KR1020127027654A KR101790103B1 (ko) | 2010-03-25 | 2011-03-24 | 플라즈마 처리 장치 |
CN201180015563.2A CN102822948B (zh) | 2010-03-25 | 2011-03-24 | 区域温度控制结构体 |
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US9484232B2 (en) | 2016-11-01 |
TWI509685B (zh) | 2015-11-21 |
EP2551894B1 (en) | 2018-09-26 |
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US20110232888A1 (en) | 2011-09-29 |
JP5675138B2 (ja) | 2015-02-25 |
CN102822948A (zh) | 2012-12-12 |
KR101790103B1 (ko) | 2017-10-25 |
EP2551894A1 (en) | 2013-01-30 |
CN102822948B (zh) | 2016-03-09 |
EP2551894A4 (en) | 2016-12-07 |
TW201205668A (en) | 2012-02-01 |
KR20130016313A (ko) | 2013-02-14 |
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