WO2011081049A1 - Structure de table de montage et appareil de traitement - Google Patents

Structure de table de montage et appareil de traitement Download PDF

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Publication number
WO2011081049A1
WO2011081049A1 PCT/JP2010/072915 JP2010072915W WO2011081049A1 WO 2011081049 A1 WO2011081049 A1 WO 2011081049A1 JP 2010072915 W JP2010072915 W JP 2010072915W WO 2011081049 A1 WO2011081049 A1 WO 2011081049A1
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WO
WIPO (PCT)
Prior art keywords
mounting table
table structure
gas
structure according
cover member
Prior art date
Application number
PCT/JP2010/072915
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English (en)
Japanese (ja)
Inventor
裕雄 川崎
哲也 斉藤
秀樹 長岡
貴志 村岡
弘彦 山本
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to CN2010800555698A priority Critical patent/CN102668060A/zh
Publication of WO2011081049A1 publication Critical patent/WO2011081049A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a processing apparatus for a target object such as a semiconductor wafer and a mounting table structure.
  • a necessary processing gas corresponding to the type of the process for example, a film forming gas or a halogen gas in the case of a film forming process, and an ozone gas in the case of a reforming process.
  • an inert gas such as N 2 gas or O 2 gas is introduced into the treatment container.
  • a mounting table having a built-in resistance heater for example, is installed in a processing container that can be evacuated.
  • a semiconductor wafer is placed on the wafer, and a predetermined processing gas is flowed in a state heated at a predetermined temperature (for example, 100 ° C. to 1000 ° C.), and the wafer is subjected to various heat treatments under predetermined process conditions.
  • a predetermined temperature for example, 100 ° C. to 1000 ° C.
  • a mounting table structure for mounting a semiconductor wafer in general, it is necessary to provide heat resistance and corrosion resistance and to prevent metal contamination such as metal contamination.
  • a ceramic material such as AlN.
  • a resistance heater is embedded as a heating element and integrally fired at a high temperature to form a mounting table.
  • ceramic material or the like is similarly fired to form a support column, and the integrally fired mounting table side and the support column are welded and integrated by, for example, thermal diffusion bonding to manufacture a mounting table structure.
  • the mounting table structure integrally formed in this way is provided upright at the bottom of the processing container.
  • quartz glass having heat and corrosion resistance and less thermal expansion and contraction may be used.
  • FIG. 15 is a cross-sectional view showing an example of a conventional mounting table structure.
  • This mounting table structure is provided in a processing vessel that can be evacuated, and has a disk-shaped mounting table 2 made of a ceramic material such as AlN, as shown in FIG.
  • a cylindrical column 4 made of a ceramic material such as AlN is joined and integrated at the center of the lower surface of the mounting table 2 by, for example, thermal diffusion bonding.
  • the size of the mounting table 2 is about 350 mm in diameter when the wafer size is 300 mm, for example, and the diameter of the column 4 is about 56 mm.
  • a heating means 8 such as a heater is provided in the mounting table 2 to heat the semiconductor wafer W as a target object on the mounting table 2.
  • the lower end of the support column 4 is in an upright state by being fixed to the container bottom 9 by a fixing block 10.
  • the cylindrical support column 4 is provided with a power supply rod 14 whose upper end is connected to the heating means 8 via a connection terminal 12.
  • the lower end portion of the power supply rod 14 is provided with an insulating member 16. Through the bottom of the container, it passes through the bottom of the container and is drawn out. As a result, the process gas or the like can be prevented from entering the support column 4, and the feeding rod 14, the connection terminal 12 or the like can be prevented from being corroded by the corrosive process gas. .
  • the mounting table 2 itself is in a high temperature state.
  • the material constituting the support column 4 is made of a ceramic material having a thermal conductivity that is not so good, the mounting table 2 and the support column 4 are joined by thermal diffusion. It is inevitable that the heat will escape from the center side of the mounting table 2 to the support column 4 side. For this reason, especially at the time of raising and lowering the temperature of the mounting table 2, the temperature of the central part of the mounting table 2 is lowered and a cool spot is generated, whereas the temperature of the peripheral part is relatively increased. A large temperature difference occurs in the surface, and as a result, there is a problem that the mounting table 2 is damaged due to a large thermal stress generated between the central portion and the peripheral portion of the mounting table 2.
  • the temperature of the mounting table 2 reaches 800 ° C. or more, so the temperature difference becomes considerably large, and a large thermal stress is generated accordingly. In addition to this, there is a problem that damage due to the thermal stress is promoted by repeated raising and lowering of the temperature of the mounting table.
  • a heat generating plate is accommodated in a heat generating plate storage container to form a mounting table, and a metal seal member having high temperature and heat resistance between them.
  • a technique has been proposed in which the heat generating plate storage container and the cylindrical column are loosely connected with pins or bolt members made of a ceramic material or the like.
  • purge gas is supplied through the support column to the heat generating plate storage container. We are trying to supply it inside.
  • An object of the present invention is to prevent a large thermal stress from being generated on the mounting table, to prevent the mounting table itself from being damaged, and to prevent the in-plane temperature of the object to be processed on the back surface of the mounting table. It is an object of the present invention to provide a mounting table structure and a processing apparatus that can prevent an unnecessary film that causes uniformity from adhering.
  • the present invention provides a mounting table structure for mounting a target object to be processed, which is provided in a processing container that can be evacuated, and mounts the target object on a plate-shaped mounting base body. And a heating table provided on the mounting table, a mounting table provided with a gas diffusion chamber at a boundary portion between the mounting table main body and the heat diffusion plate, and a mounting table described above.
  • One or a plurality of columns provided to stand upright from the bottom of the processing vessel for supporting and having an upper end connected to the lower surface of the mounting table and communicated with the gas diffusion chamber to flow purge gas A gas, and a mounting table cover member provided so as to cover a tube, a side surface and a lower surface of the mounting table main body, and a periphery of the support tube and an upper end portion connected to the mounting table cover member.
  • a strut pipe cover member adapted to exhaust from the gas outlet of the purge gas flowing into the gap between the base cover member is guided downward, a table structure mounting characterized by comprising a.
  • the mounting table structure for mounting the target object to be processed which is provided in the processing container made evacuable, for mounting the target object on the mounting table main body.
  • An upper end portion is connected to the lower surface of the mounting table in order to support the mounting table and to support the mounting table with a gas diffusion chamber provided at the boundary between the mounting table body and the heat diffusion plate.
  • a mounting table cover member is provided so as to cover the side surface and the lower surface of the mounting table main body, and the upper end portion surrounds the periphery of the support tube.
  • the purge gas supplied into the gas diffusion chamber is caused to flow into the column tube cover member through the gap between the mounting table cover member and the mounting table body.
  • the present invention provides a processing container for performing processing on a target object, a processing container that can be evacuated, and a mounting table structure having the above-mentioned characteristics for mounting the target object, And a gas supply means for supplying a gas into the processing container.
  • FIG. 2 is a cross-sectional view taken along line AA in FIG. 1.
  • FIG. 2 is a partial enlarged cross-sectional view representatively showing a part of a column tube of a part of the mounting table structure of FIG. 1.
  • It is explanatory drawing for demonstrating the assembly state of the mounting base structure of FIG. It is a partial expanded sectional view which shows the flow of the purge gas in a mounting base structure. It is a figure which shows the cover member of the 1st modification of the mounting base structure of this invention.
  • thermocouple It is a figure which shows the cover member of the 1st modification of the mounting base structure of this invention. It is a figure which shows a part of mounting base used in the 2nd modification of the processing apparatus of this invention. It is a figure which shows a part of mounting base used in the 2nd modification of the processing apparatus of this invention. It is a figure which shows the attachment structure of the upper end part of a thermocouple. It is the elements on larger scale which show the deformation
  • FIG. 1 is a cross-sectional configuration diagram showing a processing apparatus having a mounting table structure according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing an example of heating means provided on the mounting table.
  • FIG. 3 is a cross-sectional view taken along line AA in FIG.
  • FIG. 4 is a partial enlarged cross-sectional view representatively showing a part of the column tube of the mounting table structure of FIG.
  • FIG. 5 is an explanatory diagram for explaining an assembled state of the mounting table structure of FIG. 4.
  • FIG. 6 is a partially enlarged cross-sectional view showing the flow of purge gas in the mounting table structure.
  • the “functional rod” described below is not only a single metal rod but also a flexible wire or a plurality of wires covered with an insulating material and combined into one to form a rod. It also includes other members.
  • the processing apparatus 20 includes an aluminum processing container 22 having a cylindrical shape with a cross section having a large and small diameter, for example.
  • the processing gas is jetted toward the processing space S from a number of gas jetting holes 32A and 32B provided on the gas jetting surface 28 on the lower surface of the shower head portion 24.
  • the shower head 24 also serves as an upper electrode during plasma processing.
  • gas diffusion chambers 30A and 30B divided into two hollow shapes are formed.
  • the processing gas introduced here is diffused in the plane direction and then ejected from the gas injection holes 32A and 32B respectively connected to the gas diffusion chambers 30A and 30B.
  • the gas injection holes 32A and 32B are arranged in a matrix.
  • the entire shower head portion 24 is formed of nickel alloy such as nickel or Hastelloy (registered trademark), aluminum, or aluminum alloy, for example. Note that even when the shower head portion 24 has one gas diffusion chamber, it is not excluded from the present invention at least at the time of filing this application.
  • a sealing member 34 made of, for example, an O-ring or the like is interposed at a joint portion between the shower head portion 24 and the insulating layer 26 at the upper end opening of the processing container 22, so that the airtightness in the processing container 22 is maintained. It is like that.
  • the shower head unit 24 is connected to a high frequency power source 38 for plasma of, for example, 13.56 MHz through a matching circuit 36, so that plasma can be generated when necessary. This frequency is not limited to the above 13.56 MHz.
  • a loading / unloading port 40 for loading / unloading a semiconductor wafer W as an object to / from the processing container 22 is provided on the side wall of the processing container 22, and the loading / unloading port 40 can be opened and closed in an airtight manner.
  • a gate valve 42 is provided.
  • the center part of the bottom part 44 of the processing container 22 is shape
  • an exhaust port 46 is provided at the lower part of the side wall that defines the gas exhaust space 43 of the processing container 22.
  • An exhaust system 48 for exhausting, for example, evacuating the inside of the processing container 22 is connected to the exhaust port 46.
  • the exhaust system 48 has an exhaust passage 49 connected to the exhaust port 46, and a pressure regulating valve 50 and a vacuum pump 52 are sequentially provided in the exhaust passage 49, and the processing container 22 is desired.
  • the pressure to be maintained can be maintained.
  • the inside of the processing container 22 may be set to a pressure close to atmospheric pressure.
  • a mounting table structure 54 which is a feature of the present invention, is provided on the bottom 44A that partitions the gas exhaust space 43 in the processing container 22 so as to stand up from the bottom 44A.
  • the mounting table structure 54 is connected to the mounting table 58 for mounting the object to be processed on the upper surface, and supports the mounting table 58 upright from the bottom of the processing container 22.
  • 1 or a plurality of support pipes 60, a mounting table cover member 63 covering the mounting table 58, and a support tube cover member 65 surrounding the support tube 60 are mainly included.
  • a plurality of support pipes 60 are provided, and functional rods 62 are inserted into all the support pipes 60.
  • the support pipes 60 are arranged in the horizontal direction.
  • the mounting table 58 is entirely made of a dielectric.
  • the mounting table 58 is a mounting table main body 59 made of thick and transparent quartz, and an opaque dielectric provided on the upper surface side of the mounting table main body 59 and different from the mounting table main body 59, for example, a heat resistant material.
  • the heat diffusion plate 61 is made of a ceramic material such as aluminum nitride (AlN).
  • a heating means 64 is provided so as to be embedded.
  • a dual-purpose electrode 66 is embedded in the heat diffusion plate 61.
  • a wafer W is placed on the upper surface of the heat diffusing plate 61, and the wafer W is heated via the heat diffusing plate 61 by radiant heat from the heating means 64.
  • the heating means 64 includes a heating element 68 made of, for example, a carbon wire heater or a molybdenum wire heater, and the heating element 68 is predetermined over substantially the entire surface of the mounting table main body 59 (mounting table 58). It is provided in the pattern shape.
  • the heating element 68 is electrically separated into two zones, an inner peripheral zone heating element 68A on the center side of the mounting table 58 and an outer peripheral zone heating element 68B on the outer side.
  • the connection terminals of the zone heating elements 68A and 68B are gathered on the center side of the mounting table 58.
  • the number of zones may be set to one or three or more.
  • the dual-purpose electrode 66 is provided in the opaque heat diffusion plate 61 as described above.
  • the dual-purpose electrode 66 is made of, for example, a conductor wire formed in a mesh shape, and the connection terminal of the dual-purpose electrode 66 is located at the center of the mounting table 58.
  • the dual-purpose electrode 66 serves as both a chuck electrode for an electrostatic chuck and a high-frequency electrode serving as a lower electrode for applying high-frequency power.
  • the functional rod 62 is provided as a feeding rod that feeds power to the heating element 68 and the dual-purpose electrode 66 and a conductive rod of a thermocouple that measures temperature. Each of these function rods 62 is inserted into the thin column tube 60.
  • each column tube 60 is made of a dielectric material, and specifically made of, for example, quartz, which is the same dielectric material as the mounting table main body 59.
  • Each column tube 60 is joined to the lower surface of the mounting table main body 59 so as to be integrated in an airtight manner, for example, by heat welding. Therefore, a heat welding joint 60A (see FIG. 4) is formed at the upper end of each column pipe 60.
  • a function bar 62 is inserted into each column tube 60.
  • FIG. 4 as described above, a part of the support pipes 60 are representatively shown, and two function rod bodies 62 are accommodated in one support pipe 60 among them as described later. Yes.
  • heater feed rods 70 and 72 as two function rods 62 for power-in and power-out are individually inserted into the support pipe 60 for the inner peripheral zone heating element 68A. ing. The upper ends of the heater power supply rods 70 and 72 are electrically connected to the inner peripheral zone heating element 68A.
  • heater power feed rods 74 and 76 as two function rods 62 for power-in and power-out are individually inserted into the column tube 60 with respect to the outer peripheral zone heating element 68B.
  • the upper ends of the heater power supply rods 74 and 76 are electrically connected to the outer peripheral zone heating element 68B (see FIG. 1).
  • Each heater power supply rod 70 to 76 is made of, for example, a nickel alloy.
  • a dual-purpose power supply rod 78 is inserted into the column tube 60 as a functional rod 62 with respect to the dual-purpose electrode 66.
  • the upper end of the dual-purpose power supply rod 78 is electrically connected to the dual-purpose electrode 66 via a connection terminal 78A (see FIG. 4).
  • the combined power supply rod 78 is made of, for example, a nickel alloy, a tungsten alloy, a molybdenum alloy, or the like.
  • thermocouples 80 and 81 are inserted as function rods 62 into the remaining one column tube 60 in order to measure the temperature of the mounting table 58.
  • the temperature measuring contacts 80A and 81A of the thermocouples 80 and 81 are respectively positioned on the lower surfaces of the inner and outer peripheral zones of the heat diffusion plate 61 so as to detect the temperature of each zone.
  • a sheath type thermocouple can be used as the thermocouples 80 and 81.
  • a thermocouple wire is inserted inside a metal protective tube (sheath) and hermetically sealed with a powder of an inorganic insulator such as high-purity magnesium oxide. Excellent responsiveness and excellent durability even for long-term continuous use in high temperature environments and various malignant atmospheres.
  • through holes 84 and 86 are respectively formed in portions of the mounting table main body 59 through which the connection terminals 78A and the thermocouples 80 and 81 pass, and the upper surface of the mounting table main body 59 is The through holes 84 and 86 communicate with each other.
  • the heater rod 70, the dual-purpose rod 78, and the two thermocouples 80 and 81 are representatively described as the functional rod body 62.
  • a disc-shaped gas diffusion chamber 88 is formed at the boundary between the mounting table main body 59 and the heat diffusion plate 61.
  • a ring-shaped contact protrusion 89 that protrudes downward is provided at the lower surface peripheral portion located slightly inside the outer peripheral end of the heat diffusion plate 61.
  • the front end surface comes into contact with the upper surface of the mounting table main body 59.
  • the inside of the abutting projection 89 is a recess, and this recess forms a gas diffusion chamber 88.
  • the contact protrusion 89 may be provided not on the heat diffusing plate 61 but on the mounting table main body 59, or may be provided on both.
  • the diameter of the mounting table 58 is about 340 mm when a wafer W having a diameter of 300 mm is mounted, and the width of the contact protrusion 89 is about 10 mm.
  • the gas diffusion chamber 88 communicates with the support pipe 60 through which the dual-purpose power supply rod 78 is inserted through the through hole 84 so that a purge gas can be supplied into the gas diffusion chamber 88 as will be described later.
  • the bottom 44 of the processing container 22 is made of, for example, stainless steel, and a conductor outlet 90 is formed at the center of the bottom 44A that partitions the gas exhaust space 43 as shown in FIG.
  • a mounting base 92 made of, for example, stainless steel or the like is hermetically attached and fixed to the inside of the conductor outlet 90 through a seal member 94 such as an O-ring.
  • a pipe fixing base 96 for fixing each column pipe 60 is provided on this mounting base 92.
  • the tube fixing base 96 is made of the same material as each column tube 60, that is, here, quartz, and a through hole 98 is formed corresponding to each column tube 60.
  • the lower end side of each column pipe 60 is connected and fixed to the upper surface side of the pipe fixing base 96 by heat welding or the like. Therefore, the heat welding part 60B is formed here.
  • each column pipe 60 into which each heater power supply rod 70, 72, 74, 76 is inserted is inserted downward through a through hole 98 formed in the pipe fixing base 96, and its lower end is sealed. Then, an inert gas such as N 2 or Ar is enclosed in a reduced pressure atmosphere. 4 shows only one heater power supply rod 70, the other heater power supply rods 72 to 76 are configured in the same manner.
  • a fixing member 100 made of, for example, stainless steel is provided around the periphery of the tube fixing base 96 for fixing the lower end portion of each column tube 60 so as to surround the tube fixing table 96.
  • the fixing member 100 is fixed to the mounting base 92 side by bolts 102.
  • through holes 104 are formed in the mounting base 92 so as to correspond to the through holes 98 of the tube fixing base 96, and the functional rods 62 are respectively inserted downward.
  • a sealing member 106 such as an O-ring is provided on the joint surface between the lower surface of the tube fixing base 96 and the upper surface of the mounting base 92 so as to surround each through hole 104. I try to increase it.
  • a sealing plate 112 is provided at the lower end of each through-hole 104 through which the dual-purpose power supply rod 78 and the two thermocouples 80 and 81 are inserted, through seal members 108 and 110 made of O-rings or the like, respectively. 114 are fixed by bolts 116 and 118. As a result, the dual-purpose power supply rod 78 and the thermocouples 80 and 81 pass through the sealing plates 112 and 114 in an airtight manner.
  • the sealing plates 112 and 114 are made of, for example, stainless steel, and an insulating member 120 is provided around the dual-purpose power supply rod 78 so as to correspond to the penetrating portion of the dual-purpose power supply rod 78 with respect to the seal plate 112.
  • a purge gas path 122 is formed in the mounting base 92 and the bottom 44A in contact with the mounting base 92 so as to communicate with the through hole 104 through which the dual-purpose power supply rod 78 is inserted.
  • a purge gas such as N 2 can be supplied into the column pipe 60 through which the dual-purpose power supply rod 78 passes.
  • the through hole 84 and the through hole 86 communicate with each other through the gas diffusion chamber 88 as described above, the column through which the two thermocouples 80 and 81 are passed instead of the column tube 60 of the dual-purpose power feed rod 78.
  • An inert gas may be supplied into the tube 60.
  • the diameter of the mounting table 58 is about 340 mm for a 300 mm (12 inch) wafer, about 230 mm for a 200 mm (8 inch) wafer, and about 460 mm for a 400 mm (16 inch) wafer.
  • Each strut tube 60 has a diameter of about 8 to 16 mm
  • each functional rod 62 has a diameter of about 4 to 6 mm.
  • thermocouples 80 and 81 are connected to a heater power supply control unit 134 having a computer or the like, for example. Further, the wires 136, 138, 140, 142 connected to the heater power supply rods 70, 72, 74, 76 of the heating means 64 are also connected to the heater power supply control unit 134 and measured by the thermocouples 80, 81.
  • the inner and outer zone heating elements 68A and 68B are individually controlled on the basis of the temperature thus set so that the desired temperature can be maintained.
  • the wiring 144 connected to the dual-purpose power supply rod 78 is connected to a DC power source 146 for electrostatic chuck and a high frequency power source 148 for applying high frequency power for bias.
  • the wafer W can be electrostatically attracted and high-frequency power can be applied as a bias to the mounting table 58 serving as a lower electrode during the process.
  • As the frequency of the high-frequency power 13.56 MHz can be used, but 400 kHz or the like can be used in addition, and is not limited to these frequencies.
  • the mounting table 58 and the mounting table cover member 63 are formed with a plurality of, for example, three pin insertion holes 150 penetrating the mounting table 58 and the mounting table cover member 63 (only two are shown in FIG. 1).
  • a push-up pin 152 inserted in the pin insertion hole 150 in a loosely fitted state so as to be vertically movable is disposed.
  • An arc-shaped ceramic push-up ring 154 such as alumina is disposed at the lower end of the push-up pin 152, and the lower end of each push-up pin 152 is on the push-up ring 154.
  • the arm portion 156 extending from the push-up ring 154 is connected to a retracting rod 158 provided through the bottom 44 of the processing container 22, and the retracting rod 158 can be moved up and down by an actuator 160.
  • each push-up pin 152 is projected and retracted upward from the upper end of each pin insertion hole 150 when the wafer W is transferred.
  • an extendable bellows 162 is interposed in the penetrating portion of the bottom 44 of the processing container 22 of the retracting rod 158 so that the retracting rod 158 can be raised and lowered while maintaining the airtightness in the processing container 22. ing.
  • the mounting table cover member 63 provided so as to cover the mounting table 58 mainly protects the mounting table main body 59 from a cleaning gas such as NF 3 gas that removes unnecessary films adhering in the processing container 22. belongs to.
  • the column pipe cover member 65 finally guides the purge gas introduced into the gas diffusion chamber 88 in the mounting table 58 to the lower side of each column pipe 60.
  • Both the mounting table cover member 63 and the support tube cover member 65 are made of a ceramic material such as aluminum nitride or alumina, which is a corrosion-resistant material.
  • the strut tube cover member 65 is integrally joined to the mounting table cover member 63.
  • the mounting table cover member 63 is divided into a plurality of concentric circles in order to facilitate this assembly, and the side surface of the mounting table 58 and the lower surface of the mounting table 58 are shown.
  • a peripheral cover plate 63A that covers from the middle periphery to the peripheral portion and a disc-shaped central cover plate 63B that covers the central portion of the lower surface of the mounting table 58 are divided.
  • the number of divisions is not limited to two, and the peripheral cover plate 63A may be further divided into a plurality of concentric shapes, or may be formed integrally without being divided. Further, the central cover plate 63B may be omitted without providing it.
  • An engagement step portion 170 is formed in a ring shape at the inner peripheral end of the peripheral side cover plate 63A, and the peripheral portion of the center side cover plate 63B is brought into contact with the engagement step portion 170 to be attached thereto. It comes to support.
  • the heat diffusing plate 61, the mounting table main body 59 and the mounting table cover member 63 are integrally connected by fastening means 171.
  • the fastening means 171 includes, for example, a bolt member 182.
  • the bolt member 182 includes a bolt 178 and a nut 180.
  • Through holes 172, 174, and 176 are formed in the heat diffusion plate 61, the mounting table main body 59, and the peripheral side cover plate 63A, respectively, and the bolts 178 are inserted into the through holes 172, 174, and 176, respectively. ing.
  • the front end portion of the bolt 178 is formed as a screw portion 178A by threading, and the nut 180 is screwed into the screw portion 178A and tightened to be integrally fixed.
  • the mounting table main body 59 is sandwiched and connected between the heat diffusion plate 61 and the mounting table cover member 63. That is, the mounting table body 59 is fixed in a state of being sandwiched between the heat diffusion plate 61 and the peripheral side cover plate 63A.
  • the through holes 172 provided in the heat diffusion plate 61 are formed in a stepped shape so as to embed the bolt head, whereas the through holes 174 and 176 of the mounting table main body 59 and the peripheral side cover plate 63A are formed.
  • the bolt 178 is slightly larger than the diameter of the bolt 178, for example, about 2 to 3 mm, and is loosely fitted. As a result, a gap 184 (see FIG. 4) is formed between the outer peripheral surface of the bolt 178 and the inner peripheral surface of the through hole 174 to allow the purge gas in the gas diffusion chamber 88 to flow downward.
  • the nut 180 is configured as a nut with a resilient member, in which a concentric hollow portion is formed, and a resilient member 186 made of a coil spring is mounted in the hollow portion.
  • the nut 180 presses the peripheral cover plate 63A, while the tip of the resilient member 186 presses the mounting table main body 59 (see FIG. 4).
  • the peripheral cover plate 63A and the center A gap 188 through which purge gas flows can be formed between the side cover plate 63B and the mounting table main body 59.
  • the inner diameter of the side plate 63 ′ of the peripheral side cover plate 63 A covering the side surface of the mounting table main body 59 is set to be several mm larger than the diameter of the mounting table main body 59.
  • a gap 190 through which purge gas flows is also formed between the side surfaces.
  • the upper end of the side plate 63 ′ is in contact with the outermost lower surface of the heat diffusing plate 61 to form a contact portion 200. In this case, it is inevitable that a slight gap is generated in the contact portion 200, but as will be described later, the purge gas is discharged through the slight gap.
  • a pin insertion hole 150 is formed at the center of the bolt 178 so as to penetrate the bolt 178 in the vertical direction. By inserting the bolt 178 through the through holes 172, 174, and 176, the pin insertion hole 150 is provided in the mounting table 58. In addition, the pin insertion hole 150 may not be provided in the bolt 178 but may be provided separately in other parts of the mounting table 58.
  • the bolt member 182, that is, the bolt 178 or the nut 180 can be made of a corrosion-resistant material, for example, a ceramic material such as aluminum nitride or alumina. Further, as the elastic member 186, a ceramic spring or a metal spring can be used when there is little risk of metal contamination.
  • a column tube insertion hole 192 (see FIG. 5) having an inner diameter that is several mm larger than the outer diameter of the column tube 60 is formed. Yes.
  • the purge gas supplied to the gas diffusion chamber 88 and flowing through the gap 184 and the gap 188 passes through the gap formed between the outer circumference of the column pipe 60 and the inner circumference of the column pipe insertion hole 192. It is made to flow into the member 65.
  • the support pipe cover member 65 is formed in a cylindrical shape so as to surround the entire periphery of each support pipe 60, and the upper end thereof is integrally formed with the inner peripheral end of the peripheral cover plate 63 ⁇ / b> A by the heat welding joint 194. It is supported by being joined to.
  • the strut tube cover member 65 extends downward, and as shown in FIGS. 1 and 4, the lower end portion thereof is located in the vicinity of the bottom portion 44A of the processing vessel 22, and a gas outlet 196 is formed therein. ing.
  • An exhaust port 46 for exhausting the atmosphere in the processing vessel 22 is located immediately to the side of the gas outlet 196, and the purge gas flowing out from the gas outlet 196 can be immediately sucked and exhausted from the exhaust port 46. It is like that.
  • the length L (see FIG. 4) of the column tube cover member 65 is at least as long as the process gas and the cleaning gas diffuse and flow backward from the gas outlet 196 against the flow of the purge gas discharged therefrom.
  • the length is set such that it cannot reach the lower surface of the mounting table main body 59.
  • Such a length L depends on the pressure in the processing vessel 22 and the supply pressure (supply amount) of the purge gas, but is generally set to 100 mm or more, for example, 130 mm.
  • the device control unit 197 includes a storage medium 198 that stores a computer program necessary for the above operation.
  • the storage medium 198 includes a flexible disk, a CD (Compact Disc), a hard disk, a flash memory, and the like.
  • an unprocessed semiconductor wafer W is loaded into the processing container 22 through the gate valve 42 and the loading / unloading port 40 which are opened by being held by a transfer arm (not shown).
  • the wafer W is transferred to the raised push-up pins 152, and the push-up pins 152 are lowered to move the wafer W to the heat diffusion plate 61 of the mounting table 58 supported by each column tube 60 of the mounting table structure 54. It is mounted and supported on the upper surface.
  • the electrostatic chuck functions and the wafer W is attracted and held on the mounting table 58. Is done.
  • a clamp mechanism that holds the periphery of the wafer W is used instead of the electrostatic chuck.
  • various processing gases are supplied to the shower head unit 24 while controlling the flow rates, and these gases are injected from the gas injection holes 32A and 32B and introduced into the processing space S.
  • the atmosphere in the processing container 22 is evacuated, and by adjusting the valve opening degree of the pressure regulating valve 50, the atmosphere in the processing space S is predetermined. Maintained at the process pressure.
  • the temperature of the wafer W is maintained at a predetermined process temperature. That is, heat generation is controlled by applying a voltage from the heater power supply control unit 134 to the inner zone heating element 68A and the outer zone heating element 68B constituting the heating means 64 of the mounting table 58, respectively.
  • the wafer W is heated and heated by the heat from the zone heating elements 68A and 68B.
  • the wafers (mounting table) temperatures in the inner peripheral zone and the outer peripheral zone are respectively measured by thermocouples 80 and 81 provided at the central portion and the peripheral portion of the lower surface of the heat diffusion plate 61, and based on these measured values.
  • the heater power supply control unit 134 performs temperature control with feedback for each zone. For this reason, the temperature of the wafer W can be controlled in a state where the in-plane uniformity is always high. In this case, although depending on the type of process, the temperature of the mounting table 58 reaches about 700 ° C., for example.
  • a high frequency power source 38 is driven to apply a high frequency between the shower head unit 24 that is the upper electrode and the mounting table 58 that is the lower electrode, thereby generating plasma in the processing space S. Then, a predetermined plasma treatment is performed. At this time, plasma ions can be attracted by applying high-frequency power from a high-frequency power source 148 for bias to the dual-purpose electrode 66 provided on the heat diffusion plate 61 of the mounting table 58.
  • the function of the mounting table structure 54 will be described in detail with reference to FIG.
  • the flow of the purge gas (N 2 ) is indicated by an arrow.
  • Electric power is supplied to the inner peripheral zone heating element 68A of the heating means via heater power supply rods 70 and 72, which are functional rods 62, and power is supplied to the outer peripheral zone heating element 68B via heater power supply rods 74 and 76. Is supplied.
  • the temperature at the center of the mounting table 58 is transmitted to the heater power supply control unit 134 via the thermocouple 80 arranged so that the temperature measuring contact 80A is in contact with the center of the lower surface of the mounting table 58.
  • the temperature measuring contact 80A measures the temperature of the inner peripheral zone. Further, the temperature of the outer peripheral zone is measured at a temperature measuring contact 81 ⁇ / b> A of the thermocouple 81 arranged on the outer periphery, and the measured value is transmitted to the heater power supply control unit 134. As described above, the power supplied to the inner zone heating element 68A and the outer zone heating element 68B is determined based on the feedback control.
  • a DC voltage for electrostatic chuck and a high frequency power for bias are applied to the dual-purpose electrode 66 via the dual-purpose power supply rod 78.
  • the heater power supply rods 70, 72, 74, 76, the thermocouples 80, 81, and the dual-purpose power supply rod 78, which are the functional rod bodies 62, are hermetically heat-welded to the lower surface of the mounting table main body 59 of the mounting table 58.
  • Each of the thin support pipes 60 is inserted individually (thermocouples 80 and 81 are one common support pipe). At the same time, these support pipes 60 support the mounting table 58 so as to stand upright.
  • each column pipe 60 through which each heater power supply rod 70 to 76 is inserted is sealed in a depressurized state with an inert gas, for example, N 2 gas, and oxidation of the heater power supply rods 70 to 76 is prevented.
  • N 2 gas is supplied as purge gas into the column pipe 60 through which the dual-purpose power supply rod 78 is inserted through the purge gas passage 122, and this N 2 gas is supplied to the mounting table main body 59 and the heat diffusion plate 61.
  • N 2 gas is supplied as purge gas into the column pipe 60 through which the dual-purpose power supply rod 78 is inserted through the purge gas passage 122, and this N 2 gas is supplied to the mounting table main body 59 and the heat diffusion plate 61.
  • the gas diffusion chamber 88 formed at the boundary portion between the two and radially diffusing radially outward. A part of this purge gas also flows into the column tube 60 through which the thermocouples 80 and 81 are inserted.
  • the purge gas flows down in the column tube cover member 65, and then is discharged from the gas outlet 196 formed at the lower end portion to the bottom portion in the gas exhaust space 43, and then the exhaust port formed on the side thereof.
  • the vacuum is pulled out of the processing vessel 22 from 46. That is, the column pipe cover member 65 is used as a gas exhaust path for the purge gas supplied from the purge gas path 122.
  • the purge gas is set so that the pressure of the purge gas in the region defined by the heat diffusion plate 61, the mounting table cover member 63, and the support tube cover member 65 is in a positive pressure state higher than the process pressure in the processing container 22.
  • the flow rate of the purge gas supplied from the passage 122 is maintained.
  • the temperature of the mounting table 58 is repeatedly raised and lowered so that the processing on the wafer W is repeated.
  • the temperature of the mounting table 58 rises and falls, for example, when the temperature of the mounting table 58 reaches about 700 ° C. from the room temperature as described above, 0.2 to 0.
  • a thermal expansion / contraction difference in the radial direction occurs by a distance of about 3 mm.
  • the mounting table made of a very hard ceramic material and the support column having a large diameter are firmly and integrally bonded by thermal diffusion bonding, so that the above-described only 0.2 to 0 is used.
  • the thermal expansion / contraction difference is about 3 mm, a phenomenon in which the joint between the mounting table and the support column is frequently damaged due to the repeated thermal stress accompanying the thermal expansion / contraction difference.
  • the mounting table main body 59 is coupled and supported by a plurality of thin column tubes 60 having a diameter of about 1 cm, here six columns. 60 can move following the thermal expansion and contraction of the mounting table main body 59 in the horizontal direction. Therefore, the thermal expansion and contraction of the mounting table main body 59 as described above can be allowed. As a result, thermal stress is not applied to the joint between the mounting table main body 59 and each column tube 60, and the upper end portion of each column tube 60 and the bottom surface of the mounting table body 59, that is, the connecting portion between them is damaged. Can be effectively prevented.
  • Each column tube 60 made of quartz is firmly bonded to the lower surface of the mounting table main body 59 by welding, but the diameter of the column tube 60 is as small as about 10 mm as described above. It is possible to reduce the amount of heat transferred from the gantry body 59 to each column tube 60. Therefore, since the heat escaping to the column pipes 60 can be reduced, the generation of cool spots in the mounting table main body 59 can be greatly suppressed.
  • each functional rod 62 is covered with the column tube 60, and the column tube 60 is supplied with an inert gas as a purge gas or sealed in an inert gas atmosphere.
  • the functional rod 62 is not exposed to the corrosive process gas.
  • sealing with an inert gas atmosphere can prevent the functional rod 62, the connection terminal 78A, and the like from being oxidized.
  • the purge gas diffuses through the gas diffusion chamber 88 as described above, and then flows through the gap 184 and the gap 188, and also flows into the gap 190 formed on the side surface side of the mounting table main body 59. . Therefore, a slight gap is generated in the contact portion 200 (see FIG. 6) where the purge gas in a positive pressure state is brought into surface contact with the lower surface of the outer peripheral end of the heat diffusion plate 61 and the upper end surface of the side plate 63 ′ of the peripheral cover plate 63A. Therefore, it is possible to prevent the process gas such as the film forming gas and the corrosive cleaning gas from entering or penetrating the mounting table cover member 63.
  • the surface roughness of the heat diffusion plate 61 and the side plate 63 ′ at the contact portion 200 is, for example, about 10 ⁇ m.
  • the purge gas is finally discharged from the gas outlet 196 at the lower end of the column tube cover member 65, process gas and cleaning gas are introduced into the column tube cover member 65 to some extent from the large-diameter gas outlet 196. Invasion is inevitable.
  • the length L of the column tube cover member 65 is set to a sufficient length here, it is possible to prevent the process gas and the cleaning gas that have entered the interior from reaching the mounting table main body 59. it can. Therefore, it is possible to prevent unnecessary films that cause temperature non-uniformity in the wafer surface from adhering to the upper surface and the lower surface of the mounting table main body 59.
  • the flow rate of the purge gas is, for example, in the range of 10 to 200 sccm.
  • the heat diffusing plate 61 and the mounting table main body 59 are pressed against each other by the elastic member 186 provided on the nut 180, the upper end surface of the side plate 63 ′ and the lower surface of the outer peripheral end of the heat diffusing plate 61 are arranged. Not only can the airtightness of the contact portion 200 (see FIG. 6) be made higher than when both are simply fastened with the nut 180, but also the heat conduction at the abutting protrusion 89 is improved, so that heat diffusion A temperature decrease on the outer periphery of the plate 61 can be suppressed.
  • the heat diffusion plate 61 can be prevented from being lifted by tightening the bolt member 182, the temperature measuring contacts 80A and 81A of the thermocouples 80 and 81 attached thereto are separated from the heat diffusion plate 61 and separated. There is less fear, and accordingly, the temperature of the heat diffusion plate 61 can be measured accurately.
  • the target is placed on the mounting table main body 59.
  • a heat diffusion plate 61 for mounting the processing body is supported, and the mounting table 58 is supported by a mounting table 58 in which a gas diffusion chamber 88 is provided at a boundary portion between the mounting table main body 59 and the heat diffusion plate 61.
  • one or a plurality of support pipes 60 are connected to the lower surface of the mounting table 58 and communicated with the gas diffusion chamber 88 to flow purge gas so as to cover the side surface and the lower surface of the mounting table main body 59.
  • the mounting table cover member 63 is provided, and the upper end of the support tube 60 is connected to the mounting table cover member 63 so as to surround the column tube 60, so that a gap between the mounting table main body 59 and the mounting table cover member 63 is formed from the gas diffusion chamber 88. Flowing purge gas downward Since the support pipe cover member 65 that guides and discharges from the gas outlet 196 is provided, the area of the joint between the mounting table and the support pipe is smaller than that of the support structure of the conventional structure, and the heat escape is reduced accordingly. The occurrence of cool spots can be suppressed. Therefore, it is possible to prevent a large thermal stress from being generated on the mounting table 58 and to prevent the mounting table itself from being damaged.
  • the purge gas supplied into the gas diffusion chamber 88 is passed through the gap between the mounting table cover member 63 and the mounting table main body 59 through the column tube.
  • the process gas can reach the mounting table main body 59 even if the process gas flows backward from the gas outlet 196. Absent. Therefore, an unnecessary thin film that causes non-uniformity in the in-plane temperature distribution of the object to be processed is suppressed from being attached to the back surface side of the mounting table 58.
  • the column pipe cover member 65 is formed as a single body.
  • the present invention is not limited to this, and in order to facilitate this assembly, the cylindrical column pipe cover member 65 is divided into a plurality of parts in the height direction. It may be configured to be connectable to each other.
  • 7A and 7B are views showing a cover member of the first modified embodiment of the mounting table structure of the present invention.
  • FIG. 7A shows a longitudinal sectional view
  • FIG. 7B shows a transverse sectional view of the lower cover portion.
  • 7A and 7B the same components as those shown in FIGS. 1 to 6 are denoted by the same reference numerals, and the description thereof is omitted.
  • the support pipe cover member 65 is divided into two in the height direction, and is constituted by an upper cover portion 65A and a lower cover portion 65B.
  • the support pipe cover member 65 may be further divided into three or more parts.
  • a socket-shaped stamping joint 210 is formed at the lower end portion of the upper cover portion 65A and the upper end portion of the lower cover portion 65B.
  • the lower cover portion 65B is divided in the vertical direction, and is formed by two half-split covers 65B-1 and 65B-2 having a semicircular cross section.
  • connecting pieces 212-1 and 212-2 are provided at both ends of the joint portion of the half-arc shaped half-split covers 65B-1 and 65B-2, respectively. By tightening both the connecting pieces 212-1 and 212-2 with bolts 214, both half covers 65B-1 and 65B-2 can be connected.
  • a stepped joint step 216 that can be fitted to each other is formed at the joint portion of both the half covers 65B-1 and 65B-2, and a path of a slight gap generated in the joint step portion is formed. The length is increased, so that the process gas or the like in the processing container 22 cannot easily enter the lower cover portion 65B.
  • the purge gas is formed in the three through holes 174 provided in the mounting table main body 59 into the gap 190 formed between the side plate 63 ′ of the mounting table cover member 63 and the mounting table main body 59. Flows through the gap 184. In this case, the pressure of the purge gas in these gaps 190 becomes non-uniform in the circumferential direction of the mounting table main body 59. As a result, the process gas passes from this gap 190 through a slight gap in the contact portion 200 (see FIG. 6). There is a concern that the flow rate of the purge gas discharged toward the processing space S in order to prevent intrusion becomes uneven, and it becomes difficult to discharge the purge gas as designed.
  • FIGS. 8A and 8B are diagrams showing a part of the mounting table used in the second modified embodiment of the processing apparatus of the present invention.
  • FIG. 8A is a partially enlarged view showing a part of the mounting table 58
  • FIG. 8B is a partial plan view showing the lower surface of the heat diffusion plate 61.
  • 8A and 8B the same components as those shown in FIGS. 1 to 6 are denoted by the same reference numerals.
  • the gas groove 220 extending in the width direction of the abutting protrusion 89 is formed on the surface (lower surface) of the abutting protrusion 89 provided in a ring shape around the heat diffusion plate 61. Yes.
  • a plurality of gas grooves 220 are provided at predetermined intervals along the entire circumference of the contact protrusion 89, and the gas groove 220 directly connects the gas diffusion chamber 88 and the outer peripheral gap 190. Communicating with The width L2 of the gas groove 220 is about several millimeters, and the number of gas grooves 220 is not particularly limited. For example, a range of about 10 to 50 is sufficient.
  • the purge gas in the gas diffusion chamber 88 flows directly into the outer peripheral gap 190 through the gas grooves 220 provided in the contact protrusion 89. Become. Accordingly, it is possible to suppress the purge gas pressure from becoming uneven in the gap 190. As a result, the flow rate of the purge gas released from the gap 190 to the processing space S through the slight gap of the contact portion 200 is made uniform, and the purge gas can be released as designed.
  • thermocouples 80 and 81 are provided with protrusions 222 and 224 on the lower surface of the heat diffusing plate 61, and the protrusions 222 and 224 have vertical mounting holes 222 ⁇ / b> A and horizontal holes.
  • a mounting hole 224A is formed in the direction, and the temperature measuring contacts 80A and 81A of the thermocouples 80 and 81 are inserted into the mounting holes 222A and 224A, respectively.
  • the temperature measuring contacts 80A and 81A must always be in contact with the thermal diffusion plate 61. Therefore, the upper ends of the thermocouples 80 and 81 are attached to the heat diffusion plate 61 with high attachment accuracy in consideration of the amount of thermal expansion and contraction.
  • thermocouples 80 and 81 themselves repeat thermal expansion and contraction due to repeated processing of the semiconductor wafer, the thermocouples 80 and 81 inserted therein have a larger amount of thermal expansion and contraction than the quartz column tube 60. Therefore, the upper ends of the thermocouples 80 and 81 act so as to push up with respect to the heat diffusion plate 61, and there is a concern that the heat diffusion plate 61 may be damaged in the worst case.
  • FIG. 10 is a partially enlarged view showing an example of a modified example of such a thermocouple
  • FIGS. 11A and 11B are enlarged views showing a spring portion of the thermocouple.
  • the same components as those shown in FIGS. 1 to 8 are denoted by the same reference numerals, and the description thereof is omitted.
  • FIGS. 10, 11A and 11B spring portions 226 and 228 formed by winding the thermocouples 80 and 81 themselves are formed in the middle of the thermocouples 80 and 81 in the length direction.
  • FIG. 11A shows a state before the two thermocouples 80 and 81 are assembled
  • FIG. 11B shows a state after the two thermocouples 80 and 81 are assembled.
  • the spring portions 226 and 228 are provided on the lower side in the length direction of the thermocouples 80 and 81, respectively.
  • Each spring portion 226, 228 is spirally wound and has a resilience function so that it can expand and contract in the length direction.
  • the formation positions of the spring portions 226 and 228 are different in the height direction, and are set so that the spring portions 226 and 228 do not overlap when assembled.
  • the linear part extended in the up-down direction of both the thermocouples 80 and 81 is assembled
  • the diameters of the thermocouples 80 and 81 are about 1 to 2 mm, and the diameters of the spring portions 226 and 228 are about 5 to 15 mm.
  • the number of turns (number of turns) of each spring part 226, 228 is, for example, about 2 to 20 turns, although it depends on the amount of thermal expansion and contraction to be absorbed. Accordingly, for example, assuming that the maximum temperature to be measured by the thermocouples 80 and 81 is, for example, about 800 ° C., a thermal expansion / contraction amount of about ⁇ 4 mm can be absorbed.
  • the length of each spring part 226, 228 is, for example, about 30 to 50 mm.
  • thermocouples 80 and 81 have a high purity magnesium oxide by inserting a thermocouple wire into a metal protective tube made of, for example, Inconel (registered trademark), which is a corrosion-resistant metal. It is formed by hermetically filling a powder of an inorganic insulator such as. In such thermocouples 80 and 81, the spring portions 226 and 228 as described above can be easily processed and molded.
  • the accommodation positions of the spring portions 226 and 228 are provided in a portion of the through hole 104 of the mounting base 92 or a space portion communicating with the through hole 104 as shown in FIG.
  • a spring storage container 230 formed in a concave shape is airtightly attached and fixed by a screw 234 via a seal member 232 such as an O-ring,
  • a spring accommodating space 236 communicating with the through hole 104 is formed in the interior.
  • thermocouples 80 and 81 are positioned in the spring storage space 236.
  • a drawer block 238 is formed in which the periphery of both thermocouples 80 and 81 is hermetically integrated and hardened. Then, the thermocouples 80 and 81 are pulled out of the processing container 22 by attaching the drawer block 238 to a through hole 242 formed in the bottom of the spring storage container 230 via a seal portion 240.
  • the drawer block 238 is airtightly attached and fixed by a screw (not shown) through a seal portion 240 made of a seal member such as an O-ring so as to hermetically seal the through hole 242. Yes. Therefore, the spring portions 226 and 228 are located in the atmosphere inside the seal portion 240.
  • the thermocouples 80 and 81 are assembled, the upper ends of the thermocouples 80 and 81 are brought into contact with the heat diffusion plate 61 of the mounting table 58 and are urged slightly upward by the action of the spring portions 226 and 228 at room temperature. It is assembled in the state.
  • thermocouples 80 and 81 are thermally expanded and contracted with the repeated processing of the semiconductor wafer W, the respective spring portions 226 and 228 elastically expand and contract the strain generated at that time. Can be absorbed. Accordingly, an excessive load is suppressed from being applied to the heat diffusion plate 61 with which the thermocouples 80 and 81 are in contact with each other, and this is prevented from being damaged.
  • thermocouples 80 and 81 are thermally expanded and contracted so that the temperature measuring contacts 80A and 81A at the upper end portions of the thermocouples 80 and 81 are always in contact with the heat diffusion plate 61.
  • the temperature measurement accuracy can be maintained high from a low temperature to a high temperature.
  • thermocouples 80 and 81 having the spring portions 226 and 228 are inserted into the thin column tube 60
  • the present invention is not limited to this. That is, the thermocouples 80 and 81 having the spring portions 226 and 228 may be applied to a conventional mounting table structure in which the mounting table 2 is supported by the thick cylindrical column 4 as shown in FIG. In this case, thermocouples 80 and 81 having spring portions 226 and 228 are inserted into the thick column 4.
  • one end of the elastic member 186 provided on the nut 180 is brought into contact with the mounting table main body 59 and pressed, but the present invention is not limited to this.
  • One end of the elastic member 186 is brought into contact with the peripheral side cover plate 63A, and the heat diffusion plate 61, the mounting table main body 59, and the peripheral side cover plate 63A are pressed together by the elastic member 186 so as to be integrated. Also good.
  • the bolt 182 is formed of a metal material instead of a ceramic material in order to remove such fear of damage.
  • FIG. 12A and 12B are views showing bolts of a bolt member of a first modified embodiment of the fastening means, FIG. 12A is a side view, and FIG. 12B is a bottom view.
  • description of the nut 180 and the resilient member 186 of the bolt member 182 is omitted (see FIG. 5).
  • the bolt 178 is made of a metal material
  • the bolt head 178B, the main body portion 178C, and the screw portion 178A at the lower end of the bolt 178 are all made of a metal material.
  • this metal material for example, nickel, nickel alloy or the like can be used.
  • the nut 180 (see FIGS. 4 and 5) screwed into the screw portion 178A is formed of a ceramic material as in the previous embodiment so as to avoid the use of a metal material as much as possible. ing. For this reason, a large stress is generated in the cross-sectional direction of the bolt 178 due to the thermal expansion / contraction difference between the nut 180 made of the ceramic material and the bolt 178 made of the metal material (the amount of thermal expansion and contraction of the metal material is larger than that of the ceramic material). There is a risk that the nut 180 itself is damaged. Therefore, here, a heat expansion / contraction allowance slit 250 extending along the length direction of the bolt 178 is formed in the screw portion 178A of the bolt 178.
  • the length of the thermal expansion / contraction allowance slit 250 is, for example, about 10 mm, and is formed at least over the entire length of the screw portion 178A.
  • the width of the thermal expansion / contraction allowance slit 250 is, for example, about 0.5 mm.
  • one heat expansion / contraction allowance slit 250 is provided, but the present invention is not limited to this, and a similar heat expansion / contraction allowance slit is provided on the opposite side so as to face the heat expansion / contraction allowance slit 250. Alternatively, more heat expansion / contraction allowance slits may be provided.
  • the bolt 178 is formed of a metal material, and the heat expansion / contraction allowance slit 250 is provided in the screw portion 178A. Therefore, even if a large thermal stress is applied to the bolt 178 in accordance with the heat treatment of the wafer, the bolt 178 The risk of damage to itself can be eliminated.
  • the gap of the thermal expansion / contraction allowance slit 250 formed in the screw portion 178A becomes narrow, Thermal stress can be absorbed. As a result, the nut 180 is prevented from being damaged by thermal stress.
  • the nut 180 may be formed of a metal material similar to the bolt 178 instead of a ceramic material.
  • FIG. 13 is a cross-sectional view showing the attachment state of the second modified embodiment of such a fastening means
  • FIG. 14A shows an overall perspective view of the second modified embodiment
  • FIG. 14B shows a fixing member. It is a top view.
  • the bolt member 178 having the screw portion 178A is used.
  • a sleeve having no screw portion is used in the second embodiment.
  • the fastening means 171 has a cylindrical sleeve 252 in which a head 252A having an enlarged diameter is formed at the top of the head like the previous bolt.
  • This sleeve 252 is inserted (penetrated) into each of the through holes 172, 174, 176 (see FIG. 5) formed in the heat diffusion plate 61, the mounting table main body 59, and the mounting table cover member 63, like the previous bolt. It is provided to be.
  • the hollow portion of the cylindrical sleeve 252 is formed as a pin insertion hole 150.
  • a disc-shaped holder 256 that passes through the sleeve 252 is provided at the center.
  • the inner diameter of the insertion hole 254 of the holder 256 is set to be considerably larger than the outer diameter of the sleeve 252 and forms a space between the outer periphery of the sleeve 252.
  • a first elastic member 258 made of the same coil spring as that of the previous elastic member 186 is accommodated in this space portion, and a sleeve 252 is inserted through the first elastic member 258.
  • the opening diameter of the lower end of the insertion hole 254 is made narrower than the upper side thereof and smaller than the diameter of the first elastic member 258 to form a ring-shaped engagement convex portion 256A. Accordingly, the lower end of the first elastic member 258 is brought into contact with the engaging convex portion 256A of the holder 256, and the upper end is brought into contact with the lower surface of the mounting table main body 59. Thus, the first elastic member 258 is interposed between the mounting table main body 59 and the holder 256.
  • each spring accommodating recess 260 accommodates a second resilient member 262 made of, for example, a coil spring, and is in a pressed state with the mounting table cover member 63 positioned above. Therefore, the second elastic member 262 is interposed between the mounting table cover member 63 and the holder 256.
  • a fixing member 264 for fixing the holder 256 is attached to the lower end of the sleeve 252. Specifically, a ring-shaped engagement recess 266 having a reduced outer diameter is formed at the lower end of the sleeve 252.
  • the fixing member 264 is formed in a disk shape, and the fixing member 264 is formed with a notch 264A through which the ring-shaped engaging recess 266 can be inserted to the center.
  • the engaging recess 266 of the sleeve 252 can be fitted into the notch 264A in a state where the first and second resilient members 258 and 260 are pressed against the resilient force of the first and second resilient members 258 and 260, thereby fixing the whole.
  • the disc-shaped fixing member 264 is provided with an adjusting screw 268 that is allowed to advance and retreat by penetrating in the plate thickness direction.
  • a plurality of, for example, three adjustment screws 268 are provided at equal intervals along the circumferential direction of the fixing member 264 so that the pressing force against the holder 256 can be adjusted.
  • the sleeve 252 and the holder 256 are formed of a ceramic material such as aluminum nitride or alumina, or nickel or a nickel alloy.
  • the disk-shaped fixing member 264 and the adjusting screw 268 are made of nickel or a nickel alloy.
  • the first and second elastic members 258 and 262 may be ceramic springs or metal springs that are less susceptible to metal contamination.
  • the same operational effects as those described above with reference to FIG. 5 can be exhibited.
  • the sleeve 252 of the fastening means 171 does not have a threaded portion, not only the generation of particles can be suppressed correspondingly, but also the location where thermal stress causing damage is eliminated. You can also.
  • the pressing force against the holder 256 can be changed by moving the three adjusting screws 268 provided on the disk-shaped fixing member 264 forward or backward, whereby the upper surface of the holder 256 and the mounting table cover can be changed. It is possible to control the flow rate of N 2 gas discharged to the outside through the gap by slightly changing the gap formed between the lower surface of the member 63 and the lower surface of the member 63.
  • a ground electrode having the same structure as that of the dual-purpose electrode 66 may be provided, and the lower end of the functional bar 62 connected to the ground electrode may be grounded and used as a conductive bar, thereby grounding the ground electrode.
  • a heater power supply rod of a plurality of zones if one heater power supply rod is grounded, one heater power supply rod of the heat generator of each zone is commonly used as the grounded heater power supply rod. be able to.
  • the processing apparatus using plasma has been described as an example.
  • the present invention is not limited to this. All the processing apparatuses using the mounting table structure in which the heating unit 64 is embedded in the mounting table 58, for example, plasma.
  • the present invention can also be applied to a film-forming apparatus using plasma CVD that uses silicon, a film-forming apparatus using thermal CVD that does not use plasma, an etching apparatus, a thermal diffusion apparatus, a diffusion apparatus, and a reforming apparatus. Therefore, the dual-purpose electrode 66 (including the chuck electrode and the high frequency electrode), the thermocouples 80 and 81, and the members attached to them can be omitted.
  • the gas supply means is not limited to the shower head unit 24, and the gas supply means may be constituted by, for example, a gas nozzle inserted into the processing container 22.
  • thermocouples 80 and 81 are used here as temperature measuring means, the present invention is not limited to this, and a radiation thermometer may be used.
  • the optical fiber that conducts light used in the radiation thermometer becomes a functional rod, and the optical fiber is inserted into the column tube 60.
  • the semiconductor wafer is described as an example of the object to be processed, but the present invention is not limited to this, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

Cette invention concerne une structure de table de montage disposée à l'intérieur d'une cuve de traitement susceptible d'être vidée et sur laquelle on place un objet à traiter. La structure de table de montage comprend : un corps de table de montage en forme de plateau portant une plaque de diffusion de chaleur sur laquelle est posé l'objet à traiter et qui possède une chambre de diffusion de gaz disposée dans une région frontière entre le corps de table de montage et la plaque de diffusion de chaleur ; un moyen de chauffage disposé dans la table de montage ; un ou plusieurs tubes supports qui sont dressés depuis le fond de la cuve de traitement et soutiennent ladite table, avec leurs extrémités supérieures reliées à la surface inférieure raccordés à la surface inférieure de la table de montage et communiquant avec la chambre de diffusion de gaz de manière à laisser s'écouler le gaz de purge ; un élément de couverture de la table de montage recouvrant les surfaces latérales et inférieure du corps de table de montage ; et un élément de couverture des tuyaux supports qui entoure ces tuyaux et est relié à l'élément de couverture de la table de montage par l'extrémité supérieure dudit élément de couverture des tuyaux supports de manière à diriger le gaz de purge qui a traversé la chambre de diffusion de gaz vers un interstice entre le corps de table de montage et son élément de couverture, vers le bas pour le chasser par une sortie de gaz.
PCT/JP2010/072915 2009-12-28 2010-12-20 Structure de table de montage et appareil de traitement WO2011081049A1 (fr)

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JP2010072495 2010-03-26
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JP2010146514A JP2011222931A (ja) 2009-12-28 2010-06-28 載置台構造及び処理装置
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CN113437002A (zh) * 2020-03-23 2021-09-24 平田机工株式会社 装载端口及控制方法
US11133202B2 (en) 2015-10-05 2021-09-28 Mico Ceramics Ltd. Substrate heating apparatus with enhanced temperature uniformity characteristic
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US9706605B2 (en) * 2012-03-30 2017-07-11 Applied Materials, Inc. Substrate support with feedthrough structure
JP5989593B2 (ja) * 2012-04-27 2016-09-07 日本碍子株式会社 半導体製造装置用部材
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JP6007885B2 (ja) * 2013-11-14 2016-10-19 トヨタ自動車株式会社 プラズマｃｖｄ装置
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JP7023152B2 (ja) * 2018-03-26 2022-02-21 日本特殊陶業株式会社 加熱装置
US10851458B2 (en) 2018-03-27 2020-12-01 Lam Research Corporation Connector for substrate support with embedded temperature sensors
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CN110289241B (zh) * 2019-07-04 2022-03-22 北京北方华创微电子装备有限公司 静电卡盘及其制作方法、工艺腔室和半导体处理设备
JP7426842B2 (ja) * 2020-02-12 2024-02-02 東京エレクトロン株式会社 ステージ装置、給電機構、および処理装置
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US11133202B2 (en) 2015-10-05 2021-09-28 Mico Ceramics Ltd. Substrate heating apparatus with enhanced temperature uniformity characteristic
CN109564870A (zh) * 2016-08-04 2019-04-02 日本新工芯技株式会社 电极板
CN109564870B (zh) * 2016-08-04 2023-05-02 日本新工芯技株式会社 电极板
JP2018121029A (ja) * 2017-01-27 2018-08-02 京セラ株式会社 試料保持具
CN113437002A (zh) * 2020-03-23 2021-09-24 平田机工株式会社 装载端口及控制方法
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US20210329743A1 (en) * 2020-04-20 2021-10-21 Ngk Insulators, Ltd. Ceramic heater and method of producing the same
CN113543380A (zh) * 2020-04-20 2021-10-22 日本碍子株式会社 陶瓷加热器及其制法
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JP2011222931A (ja) 2011-11-04
TW201138016A (en) 2011-11-01
KR20120112661A (ko) 2012-10-11

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