WO2011099481A1 - Structure de table de montage et dispositif de traitement - Google Patents

Structure de table de montage et dispositif de traitement Download PDF

Info

Publication number
WO2011099481A1
WO2011099481A1 PCT/JP2011/052637 JP2011052637W WO2011099481A1 WO 2011099481 A1 WO2011099481 A1 WO 2011099481A1 JP 2011052637 W JP2011052637 W JP 2011052637W WO 2011099481 A1 WO2011099481 A1 WO 2011099481A1
Authority
WO
WIPO (PCT)
Prior art keywords
mounting table
structure according
table structure
electrode
mounting
Prior art date
Application number
PCT/JP2011/052637
Other languages
English (en)
Japanese (ja)
Inventor
裕雄 川崎
哲也 斉藤
秀樹 長岡
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to CN2011800058115A priority Critical patent/CN102714172A/zh
Publication of WO2011099481A1 publication Critical patent/WO2011099481A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
    • B23Q3/06—Work-clamping means
    • B23Q3/08—Work-clamping means other than mechanically-actuated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention relates to a processing apparatus for a target object such as a semiconductor wafer and a mounting table structure.
  • a necessary processing gas for example, a film forming gas or a halogen gas in the case of a film forming process, or a gas or a halogen gas in the case of a reforming process, corresponding to the type of the process.
  • ozone gas or the like, and an inert gas such as N 2 gas or O 2 gas are introduced into the treatment container.
  • a mounting table having a built-in resistance heater for example, is installed in a processing container that can be evacuated.
  • a semiconductor wafer is placed on the wafer, and a predetermined processing gas is flowed in a state heated at a predetermined temperature (for example, 100 ° C. to 1000 ° C.), and the wafer is subjected to various heat treatments under predetermined process conditions.
  • a predetermined temperature for example, 100 ° C. to 1000 ° C.
  • the mounting table structure on which the semiconductor wafer is mounted in general, it is necessary to provide heat resistance and corrosion resistance and to prevent metal contamination such as metal contamination.
  • a ceramic such as aluminum nitride (AlN) is used.
  • a resistance heater is embedded in the material as a heating element, and is integrally fired at a high temperature to form a mounting table.
  • a ceramic material or the like is also fired to form a support column.
  • the mounting table structure integrally formed in this way is provided upright at the bottom of the processing container.
  • quartz glass having heat and corrosion resistance and less thermal expansion and contraction may be used.
  • FIG. 8 is a cross-sectional view showing an example of a conventional mounting table structure.
  • This mounting table structure is provided in a processing vessel that can be evacuated, and has a disk-shaped mounting table 2 made of a ceramic material such as aluminum nitride (AlN), as shown in FIG. ing.
  • the size of the mounting table 2 is, for example, about 350 mm in diameter when the wafer size is 300 mm, and the diameter of the support column 4 is about 56 mm.
  • a heating unit 8 made of a heater or the like is provided to heat the semiconductor wafer W as a target object on the mounting table 2.
  • the lower end of the support column 4 is in an upright state by being fixed to the container bottom 9 by a fixing block 10.
  • a power supply rod 14 whose upper end is connected to the heating means 8 via the connection terminal 12 is provided.
  • the lower end portion side of the power feeding rod 14 penetrates the container bottom portion downward via the insulating member 16 and is drawn to the outside.
  • the mounting table structure as described above is still incorporated in the processing apparatus in order to perform work quickly. There is a need to move or transport the processing equipment.
  • the strength of the joined portion is insufficient, and a crack or the like occurs in this portion. There was a fear.
  • the support column 4 itself since the support column 4 itself has a relatively thin structure, the support column 4 itself may be damaged.
  • the present invention has been devised to pay attention to the above problems and to effectively solve them.
  • the present invention provides a mounting table structure and a processing apparatus capable of improving the strength of the connecting portion between the mounting table and the column and the strength of the column itself.
  • a heating unit for mounting the target target object.
  • a support table made of a dielectric material and a support table that is erected from the bottom side of the processing vessel in order to support the test table, and an upper end portion is connected to the lower surface of the test table, and along the length direction.
  • a support post made of a dielectric having a plurality of through holes formed in this manner.
  • the area of the connecting portion between the mounting table and the column can be increased, and as a result, the strength of the connecting portion between the mounting table and the column and further the strength of the column itself can be improved. Is possible. Therefore, there is no problem in moving or transporting the processing apparatus with the mounting table structure incorporated, and the earthquake resistance can be improved.
  • the present invention provides a processing container for performing processing on a target object, a processing container that can be evacuated, and a mounting table structure having the above-mentioned characteristics for mounting the target object, And a gas supply means for supplying a gas into the processing container.
  • the area of the connecting portion between the mounting table and the column can be increased, and as a result, the strength of the connecting portion between the mounting table and the column and further the strength of the column itself can be improved. Is possible. Therefore, there is no problem in moving or transporting the processing apparatus with the mounting table structure incorporated, and the earthquake resistance can be improved.
  • FIG. 2 is a cross-sectional view taken along line AA in FIG.
  • FIG. 2 is a partially enlarged sectional view representatively showing a part of a part of the through hole of the mounting table structure of FIG. 1.
  • It is explanatory drawing for demonstrating the assembly state of the mounting base structure of FIG. It is the elements on larger scale which show the 1st modification of this invention. It is the elements on larger scale which show the part of the support
  • FIG. 1 is a cross-sectional configuration diagram showing a processing apparatus having a mounting table structure according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing an example of heating means provided on the mounting table.
  • 3 is a cross-sectional view taken along line AA in FIG. 4 is a partial enlarged cross-sectional view representatively showing a part of a part of the through hole of the mounting table structure of FIG.
  • FIG. 5 is an explanatory diagram for explaining an assembled state of the mounting table structure of FIG. 4.
  • the “functional rod” described below is not only a single metal rod but also a flexible wire or a plurality of wires covered with an insulating material and combined into one to form a rod. It is also assumed to include such a member.
  • this processing apparatus 20 has a processing container 22 made of aluminum or aluminum alloy, for example, whose cross section is substantially circular.
  • a shower head unit 24 serving as a gas supply unit is provided via an insulating layer 26 in order to introduce a necessary processing gas, for example, a film forming gas.
  • the processing gas is jetted toward the processing space S from a number of gas jetting holes 32A and 32B provided on the gas jetting surface 28 on the lower surface.
  • the shower head unit 24 also serves as an upper electrode during plasma processing.
  • gas diffusion chambers 30A and 30B divided into two hollow shapes are formed. After the processing gas introduced into the gas diffusion chambers 30A and 30B diffuses in the plane direction, The gas is injected from the gas injection holes 32A and 32B respectively connected to the gas diffusion chambers 30A and 30B. Here, the gas injection holes 32A and 32B are arranged in a matrix.
  • the entire shower head portion 24 is formed of nickel alloy such as nickel or Hastelloy (registered trademark), aluminum, or aluminum alloy, for example.
  • the structure with one gas diffusion chamber may be employ
  • a sealing member 34 made of, for example, an O-ring or the like is interposed at the joint between the shower head 24 and the insulating layer 26 at the upper end opening of the processing container 22 so as to maintain the airtightness in the processing container 22. It has become.
  • the shower head unit 24 is connected to a high frequency power source 38 for plasma of, for example, 13.56 MHz through a matching circuit 36 so that plasma can be generated when necessary. This frequency is not limited to 13.56 MHz.
  • a loading / unloading port 40 for loading and unloading the semiconductor wafer W as the object to be processed into the processing container 22 is provided.
  • the carry-in / out port 40 is provided with a gate valve 42 that can be opened and closed in an airtight manner.
  • an exhaust port 46 is provided on the side portion of the bottom 44 of the processing container 22.
  • An exhaust system 48 for exhausting, for example, evacuating the inside of the processing container 22 is connected to the exhaust port 46.
  • the exhaust system 48 has an exhaust passage 49 connected to the exhaust port 46, and a pressure regulating valve 50 and a vacuum pump 52 are sequentially provided in the exhaust passage 49, and the processing container 22 is desired.
  • the pressure to be maintained can be maintained.
  • the inside of the processing container 22 may be set to a pressure close to atmospheric pressure.
  • the mounting part structure 54 which is the characteristic of this invention is provided in the bottom part 44 in the processing container 22 so that it may stand up from this.
  • the mounting table structure 54 is mainly configured by a mounting table 58 for mounting an object to be processed on an upper surface and a column 63 connected to the mounting table 58.
  • the support column 63 supports the mounting table 58 so as to stand up from the bottom of the processing container 22, and has a plurality of through holes 60 formed along the length direction therein.
  • a functional bar 62 is inserted into each through hole 60.
  • pillar 63 is manufactured by forming the several through-hole 60 by perforation, for example in a column-shaped support
  • the through holes 60 are arranged in the horizontal direction.
  • the mounting table 58 is entirely made of a dielectric.
  • the mounting table 58 is a mounting table main body 59 made of thick and transparent quartz, and an opaque dielectric provided on the upper surface side of the mounting table main body 59 and different from the mounting table main body 59, for example, a heat resistant material.
  • the heat diffusion plate 61 is made of a ceramic material such as aluminum nitride (AlN).
  • a heating means 64 is provided so as to be embedded.
  • a dual-purpose electrode 66 is embedded in the heat diffusion plate 61.
  • the heating means 64 includes a heating element 68 made of, for example, a carbon wire heater or a molybdenum wire heater.
  • the heating element 68 is provided in a predetermined pattern shape over substantially the entire surface of the mounting table 58.
  • the heating element 68 is electrically separated into two zones, an inner peripheral zone heating element 68A on the center side of the mounting table 58 and an outer peripheral zone heating element 68B on the outer side.
  • the connection terminals of the zone heating elements 68A and 68B are gathered on the center side of the mounting table 58.
  • the number of zones may be set to 1 or 3 or more.
  • the dual-purpose electrode 66 is provided in the opaque heat diffusion plate 61 as described above.
  • the dual-purpose electrode 66 is made of a conductor wire formed in a mesh shape, for example, and the connection terminal of the dual-purpose electrode 66 is located at the center of the mounting table 58.
  • the dual-purpose electrode 66 serves as a chuck electrode for an electrostatic chuck and a high-frequency electrode serving as a lower electrode for applying high-frequency power.
  • a power bar for feeding power to the heating element 68 and the dual-purpose electrode 66 and a functional bar 62 as a conductive bar for a thermocouple for measuring temperature are provided.
  • each of these functional rods 62 is inserted into the thin through hole 60.
  • the support 63 is made of a dielectric material, specifically made of, for example, quartz, which is the same dielectric material as the mounting table main body 59.
  • a plurality of the support posts 63 are drilled by drilling along the length direction of the support 63, for example. In the illustrated example, six through holes 60 are formed.
  • a dielectric material other than quartz for example, a ceramic material such as aluminum nitride (AlN), alumina (Al 2 O 3 ), silicon carbide (SiC), or the like can be used.
  • pillar 63 is joined to the lower surface of the mounting base main body 59 so that it may become airtightly integrated by welding, for example.
  • both base materials may be melted and joined, or may be joined by a filler material having a melting point lower than that of the base material. It should be as wide as possible. Therefore, preferably, the entire upper end surface of the column 63 is joined to the lower surface of the mounting table main body 59.
  • a heat-welded joint 63A (see FIG. 4) is formed at the connecting portion at the upper end of the support 63, whereby the mounting table 58 and the support 63 are firmly joined.
  • a functional rod 62 is inserted into each through hole 60.
  • FIG. 4 as described above, some of the through holes 60 are representatively shown. In one of these through holes 60, two function rods 62 are accommodated as will be described later.
  • heater feed rods 70 and 72 are individually inserted through the through-hole 60 as two function rods 62 for power-in and power-out for the inner peripheral zone heating element 68A.
  • the upper ends of the heater power supply rods 70 and 72 are electrically connected to the inner peripheral zone heating element 68A.
  • heater power feed rods 74 and 76 are individually inserted into the through holes 60 as two function rods 62 for power-in and power-out for the outer peripheral zone heating element 68B.
  • the upper ends of the heater power supply rods 74 and 76 are electrically connected to the outer peripheral zone heating element 68B (see FIG. 1).
  • Each of the heater power supply rods 70 to 76 is made of, for example, a nickel alloy.
  • a dual-purpose power feed rod 78 is inserted into the through-hole 60 as a functional rod 62 with respect to the dual-purpose electrode 66.
  • the upper end of the dual-purpose power supply rod 78 is electrically connected to the dual-purpose electrode 66 via a connection terminal 78A (see FIG. 4).
  • the combined power supply rod 78 is made of, for example, a nickel alloy, a tungsten alloy, a molybdenum alloy, or the like.
  • thermocouples 80 and 81 are inserted into the remaining one through hole 60 as the functional rod body 62 in order to measure the temperature of the mounting table 58.
  • the temperature measuring contacts 80A and 81A of the thermocouples 80 and 81 are positioned on the lower surfaces of the inner and outer peripheral zones of the heat diffusion plate 61, respectively, so that the temperature of each zone can be detected.
  • a sheath type thermocouple can be used as the thermocouples 80 and 81.
  • This sheath type thermocouple is formed by inserting a thermocouple wire into a metal protective tube (sheath) and sealingly filling it with a powder of an inorganic insulator such as high-purity magnesium oxide. As a result, it has excellent insulating properties, airtightness, and responsiveness, and exhibits outstanding durability even for long-term continuous use in high-temperature environments and various malignant atmospheres.
  • thermocouples 80 and 81 are formed in portions of the mounting table main body 59 through which the connection terminals 78 ⁇ / b> A and the thermocouples 80 and 81 pass, respectively, and on the upper surface of the mounting table main body 59. Are communicated with the respective communication holes 84 and 86, and a groove portion 88 is formed for disposing one of the thermocouples 81 toward the outer peripheral zone.
  • a heater power supply rod 70, a dual-purpose power supply rod 78, and two thermocouples 80 and 81 are representatively shown as the functional rod body 62.
  • the bottom 44 of the processing container 22 is made of, for example, stainless steel, and as shown in FIG. 4, a conductor outlet 90 is formed at the center, and an inner side of the conductor outlet 90 has, for example, A mounting base 92 made of stainless steel or the like is hermetically attached and fixed via a seal member 94 such as an O-ring.
  • a fixing base 96 for fixing the column 63 is provided on this mounting base 92.
  • the fixed base 96 is made of the same material as that of the support 63, that is, here, quartz, and communication holes 98 corresponding to the respective through holes 60 are formed.
  • pillar 63 is connected and fixed to the upper surface side of the fixing stand 96 by welding similar to the upper end part of the support
  • both base materials may be melted and joined, or may be joined by a filler material having a melting point lower than that of the base material. Should be as wide as possible. Therefore, it is preferable to join the entire lower end surface of the column 63 to the upper surface of the fixed base 96.
  • a fixing member 100 made of, for example, stainless steel is provided around the periphery of the fixing base 96 to which the lower end portion of the column 63 is connected and fixed.
  • the fixing member 100 is fixed to the mounting base 92 side by bolts 102.
  • the mounting base 92 is formed with communication holes 104 corresponding to the respective communication holes 98 of the fixed base 96, and the functional rods 62 are respectively inserted downward.
  • a sealing member 106 such as an O-ring is provided on the joint surface between the lower surface of the fixed base 96 and the upper surface of the mounting base 92 so as to surround each communication hole 104, and the sealing performance of this portion is improved. I am doing so.
  • seal members 108, 110, and 111 made of O-rings or the like are provided at the lower ends of the communication holes 104 through which the dual-purpose power supply rod 78, the two thermocouples 80 and 81, and the heater power supply rod 70 are inserted.
  • the sealing plates 112 and 114 are attached and fixed by bolts 116 and 118.
  • the dual-purpose power supply rod 78, the thermocouples 80 and 81, and the heater power supply rod 70 are provided so as to penetrate the sealing plates 112 and 114 in an airtight manner.
  • These sealing plates 112, 114 are made of, for example, stainless steel, and correspond to the penetrating portions of the dual-purpose power supply rod 78 and the heater power supply rod 70 with respect to the sealing plate 112.
  • An insulating member 120 is provided around the periphery. In FIG. 4, only one heater power supply rod 70 is shown, but the other heater power supply rods 72 to 76 are similarly configured.
  • an inert gas passage 122 communicating with each communication hole 104 is formed in the mounting base 92 and the bottom 44 of the processing container 22 in contact with the mounting base 92, and is directed into each through hole 60 through which each functional rod 62 passes.
  • an inert gas such as N 2 can be supplied. That is, the inert gas can be made to flow in all the through holes 60 here. Since the communication hole 84 and the communication hole 86 communicate with each other through the groove portion 88 of the mounting table main body 59, the through hole 60 through which the dual-purpose power supply rod 78 is inserted and the through holes through which the two thermocouples 80 and 81 are inserted.
  • the inert gas may be supplied through the inert gas path 122 into only one of the through holes 60.
  • the diameter of the mounting table 58 is about 340 mm for a 300 mm (12 inch) wafer, and about 230 mm and 400 mm for a 200 mm (8 inch) wafer. In the case of 16 inches) wafer, it is about 460 mm.
  • the inner diameter of each through hole 60 is about 5 to 16 mm
  • the diameter of each functional rod 62 is about 4 to 6 mm
  • the diameter of the column 63 is about 60 to 90 mm.
  • thermocouples 80 and 81 are connected to a heater power supply control unit 134 having, for example, a computer or the like. Further, the wires 136, 138, 140, 142 connected to the heater power supply rods 70, 72, 74, 76 of the heating means 64 are also connected to the heater power supply control unit 134 and measured by the thermocouples 80, 81. Based on the set temperature, the inner zone heating element 68A and the outer zone heating element 68B can be individually controlled to maintain a desired temperature.
  • the wiring 144 connected to the dual-purpose power supply rod 78 is connected to a DC power source 146 for electrostatic chuck and a high frequency power source 148 for applying high frequency power for bias, respectively.
  • a DC power source 146 for electrostatic chuck and a high frequency power source 148 for applying high frequency power for bias respectively.
  • high frequency power as a bias is applied to the mounting table 58 serving as a lower electrode during the process.
  • the frequency of the high-frequency power 13.56 MHz can be used, but 400 kHz or the like can also be used, that is, there is no particular limitation.
  • each pin insertion hole 150 is provided with a push-up pin 152 that is inserted in a loosely-fitted state so as to be vertically movable.
  • arc-shaped ceramic push-up rings 154 such as alumina (Al 2 O 3 ) are arranged, and the lower ends of the push-up pins 152 ride on the push-up rings 154. Yes.
  • the arm portion 156 extending from the push-up ring 154 is connected to a retracting rod 158 provided through the bottom 44 of the processing container 22, and the retracting rod 158 can be moved up and down by an actuator 160.
  • each push-up pin 152 can be projected and retracted upward from the upper end of each pin insertion hole 150 when the wafer W is transferred.
  • an extendable bellows 162 is interposed in the penetrating portion of the retracting rod 158 provided at the bottom 44 of the processing container 22, and the retracting rod 158 moves up and down while maintaining the airtightness in the processing container 22. It can be done.
  • the pin insertion hole 150 is formed along the length direction of the bolt 170 that is a fastener for connecting the mounting table main body 59 and the heat diffusion plate 61.
  • the communication hole 172 is formed.
  • bolt holes 174 and 176 through which the bolts 170 are passed are formed in the mounting table main body 59 and the heat diffusion plate 61, and the bolts 170 in which the pin insertion holes 150 are formed in the bolt holes 174 and 176. Is inserted and tightened with a nut 178 to couple the mounting table main body 59 and the heat diffusion plate 61.
  • These bolts 170 and nuts 178 are formed of a ceramic material such as aluminum nitride (AlN) or alumina (Al 2 O 3 ).
  • the entire operation of the processing apparatus 20, for example, control of the process pressure, temperature control of the mounting table 58, supply or stop of supply of the processing gas, and the like are performed by an apparatus control unit 180 formed of, for example, a computer.
  • the device control unit 180 generally has a storage medium 182 that stores a computer program necessary for the above-described operation.
  • the storage medium 182 includes, for example, a flexible disk, a CD (Compact ⁇ Disc), a hard disk, a flash memory, or the like.
  • an unprocessed semiconductor wafer W is held by a transfer arm (not shown) and is loaded into the processing container 22 through the gate valve 42 and the loading / unloading port 40 opened.
  • the wafer W is transferred to the raised push-up pins 152, and then the push-up pins 152 are lowered to place the wafer W on the upper surface of the heat diffusion plate 61 of the placement table 58 supported by the support 63 of the placement table structure 54. Placed and supported.
  • the electrostatic chuck functions and the wafer W is attracted and held on the mounting table 58. Is done. In some cases, a clamp mechanism that holds the periphery of the wafer W is used instead of the electrostatic chuck.
  • various processing gases are supplied to the shower head unit 24 while being controlled in flow rate, injected from the gas injection holes 32A and 32B, and introduced into the processing space S.
  • the atmosphere in the processing container 22 is evacuated, and by adjusting the valve opening degree of the pressure regulating valve 50, the atmosphere of the processing space S is changed.
  • the temperature of the wafer W is maintained at a predetermined process temperature. That is, by applying a voltage from the heater power supply control unit 134 to the inner zone heating element 68A and the outer zone heating element 68B constituting the heating means 64 of the mounting table 58, the heating means 64 (each zone heating element 68A, 68B). ) Is controlled as desired.
  • the wafer W is heated and heated by the heat from the zone heating elements 68A and 68B.
  • the wafers (mounting table) temperatures in the inner peripheral zone and the outer peripheral zone are respectively measured by thermocouples 80 and 81 provided at the lower surface central portion and the peripheral portion of the heat diffusion plate 61, and based on these measured values.
  • the heater power supply control unit 134 performs feedback temperature control for each zone. For this reason, the temperature of the wafer W can be constantly controlled in a state where the in-plane uniformity is high. In this case, although depending on the type of process, the temperature of the mounting table 58 reaches about 700 ° C., for example.
  • a high frequency power is applied between the shower head unit 24 as the upper electrode and the mounting table 58 as the lower electrode by driving the high frequency power supply 38.
  • plasma is generated in the processing space S and predetermined plasma processing can be performed.
  • plasma ions can be attracted by applying high-frequency power from a high-frequency power source 148 for bias to the dual-purpose electrode 66 provided on the heat diffusion plate 61 of the mounting table 58.
  • the temperature at the center of the mounting table 58 is transmitted to the heater power supply control unit 134 via the thermocouple 80 arranged so that the temperature measuring contact 80A is in contact with the center of the lower surface of the mounting table 58.
  • the temperature measuring contact 80A measures the temperature of the inner peripheral zone.
  • the thermocouple 81 arranged on the outer periphery of the mounting table 58 measures the temperature of the outer peripheral zone at the temperature measuring contact 81 ⁇ / b> A, and the measured value is transmitted to the heater power supply control unit 134.
  • the power supplied to the inner peripheral zone heating element 68A and the outer peripheral zone heating element 68B is supplied based on the feedback control.
  • thermocouples 80, 81, and the dual-purpose power supply rod 78 which are function rods 62, are airtightly welded to the lower surface of the mounting table main body 59 of the mounting table 58.
  • the thermocouples 80 and 81 are individually inserted into the plurality of through holes 60 formed in each of the two through holes 60 in common.
  • the through holes 60 through which the heater power supply rods 70 to 76 are inserted, the thermocouples 80 and 81, and the through holes 60 through which the combined power supply rods 78 are inserted are inert through an inert gas passage 122.
  • N 2 gas is supplied as a gas, and this N 2 gas diffuses through a groove portion 88 (see FIG. 4) formed on the upper surface of the mounting table main body 59, and further, the N 2 gas is heated with the mounting table main body 59. It is also supplied to the joint surface with the diffusion plate 61.
  • the inert gas is discharged radially from the periphery of the mounting table 58 through a slight gap between the joint surfaces. As a result, it is possible to prevent the deposition gas, the cleaning gas, and the like in the processing space S from entering the gap.
  • each through hole 60 for purging with an inert gas may be sized so that each functional rod 62 can be inserted, so that the conventional support 4 (see FIG. 8)
  • the volume is very small compared to Therefore, the amount of leaking gas can be reduced as compared with the conventional mounting table structure, and the consumption of the inert gas can be reduced accordingly, so that the running cost can be reduced.
  • each of the heater power supply rods 72 to 76 and the dual-purpose power supply rod 78 are individually separated by the material forming the column 63, that is, an insulator made of quartz in this case. Abnormal discharge can be prevented.
  • the column 63 itself is formed into a columnar shape, and a plurality of through holes 60 for inserting a functional rod or the like are formed in the column, and the upper end of the column 63 is formed. Since the portion is connected to the lower surface of the mounting table 58, the strength of the column 63 itself can be greatly improved, and the strength of the connecting portion between the mounting table 58 and the column 63 can also be improved. In this case, the bonding area of the heat-welded joint 63A formed between the upper end surface of the column 63 and the lower surface of the mounting table 58 is sufficiently large, and in particular, the bonding strength between the mounting table 58 and the column 63 is increased. Can be improved.
  • the mounting table structure 54 itself can be prevented from being damaged or destroyed. Further, as described above, since the strength of the mounting table structure 54 against vibration can be improved, there is no problem in moving or transporting the processing apparatus with the mounting table structure 54 incorporated.
  • the processing target is A mounting table 58 made of a dielectric is provided with at least a heating means 64 for mounting, and is provided upright from the bottom side of the processing container 22 to support the mounting table. And a support column 63 made of a dielectric material having a plurality of through holes 60 formed along the length direction and connected to the lower surface, thereby providing an area of a connection portion between the mounting table 58 and the support column 63. Therefore, as a result, it is possible to improve the strength of the connecting portion between the mounting table 58 and the column 63 and further the strength of the column itself. Therefore, there is no problem in moving or transporting the processing apparatus with the mounting table structure incorporated, and the earthquake resistance can be improved.
  • FIG. 6 is a partially enlarged view showing such a first modified embodiment of the present invention. 4 that are the same as those shown in FIG. 4 are given the same reference numerals, and descriptions thereof are omitted.
  • a flange portion 200 is provided around the upper end portion of the column 63. And the support
  • a bolt, a screw, or the like can be used as the connecting member 202.
  • a ceramic material such as aluminum nitride (AlN) or a metal with a low possibility of contamination such as stainless steel can be used.
  • connection strength between the mounting table 58 and the column 63 is slightly inferior to that in the previous embodiment in which both are welded, but the strength of the column 63 itself is maintained high as in the previous embodiment. And the same effects as those of the previous embodiment can be exhibited.
  • FIG. 7 is a partial enlarged view showing a portion of a column of such a second modified example of the present invention. 4 that are the same as those shown in FIG. 4 are given the same reference numerals, and descriptions thereof are omitted.
  • the shaving portions 206A and 206B formed by shaving the upper and lower ends of the support 63 into a concave shape while leaving the peripheral portions in a ring shape. are provided respectively. Note that only one of the two cutting portions 206A and 206B may be provided.
  • the thickness L1 of the peripheral portion of the column 63 in the portions of the shaving portions 206A and 206B is, for example, about 2 to 5 mm, which corresponds to about 2 to 9% of the thickness of the mounting table main body 59.
  • pillar 63 is welded to the lower surface of the mounting base main body 59, and the support
  • the recesses 206A and 206B are formed, the thickness is reduced. Since the ring-shaped peripheral portion can be heated quickly in the same manner as the central portion of the lower surface of the mounting table main body 59 to be welded or the upper surface of the fixing table 96, both can be easily and quickly joined.
  • the thickness L1 of the upper and lower ends of the column 63 is set to some extent, for example, 2 mm or more, more preferably 2.5 mm or more, the bonding area between the mounting table main body 59 and the fixing table 96 is sufficiently large. Therefore, the bonding strength between the mounting table main body 59 and the fixing table 96 can be maintained high. That is, also in the case of the second modified example, the same operational effects as those of the embodiment described with reference to FIG. 4 can be exhibited.
  • the present invention is not limited thereto, and the material of the support 63 is opaque by including, for example, bubbles. It is possible to use non-transparent quartz or opaque ceramic material such as aluminum nitride (AlN). According to these, the radiant heat irradiated toward the lower end part of the support
  • AlN aluminum nitride
  • the side surface and the lower surface of the mounting table 58 are exposed in the processing container 22, but when the mounting table main body 59 is formed of quartz or the like, the quartz is an etching gas. There is a risk of corrosion. Therefore, a protective cover made of a material excellent in corrosion resistance against the etching gas, for example, a ceramic material such as aluminum nitride (AlN) or alumina (Al 2 O 3 ) is provided on the side surface and the lower surface of the mounting table 58. It may be.
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • the present invention is not limited to this, and for example, the mounting table main body 59 and the heat diffusion plate 61.
  • the present invention can also be applied to the case where the two are integrally joined by an adhesive or welding.
  • the case where aluminum nitride (AlN) is mainly used as a ceramic material has been described as an example.
  • the present invention is not limited to this, and alumina (Al 2 O 3 ), silicon carbide (SiC), etc.
  • Other ceramic materials can be used.
  • the mounting table 58 has a two-layer structure of the mounting table main body 59 and the heat diffusion plate 61 has been described as an example here, the present invention is not limited to this, and the entire mounting table 58 is made of the same dielectric, For example, a single layer structure may be made of quartz or ceramic material.
  • the upper surface of the mounting table 58 is made of, for example, a ceramic material in order to prevent the pattern shape of the heating element from being projected on the back surface of the wafer and generating heat distribution.
  • a hot plate should be provided.
  • opaque quartz containing bubbles or the like is used as the material of the mounting table 58, the above-mentioned soaking plate is not necessary.
  • N 2 gas is mainly used as an inert gas has been described as an example, but the present invention is not limited to this, and a rare gas such as He or Ar may be used.
  • the dual-purpose electrode 66 is provided on the mounting table 58, and the DC voltage for the electrostatic chuck and the high-frequency power for the bias are applied thereto via the dual-purpose power supply rod 78. May be provided separately, or only one of them may be provided. For example, when both are provided separately, two electrodes having the same structure as the dual-purpose electrode 66 are provided on the upper and lower sides, one being a chuck electrode and the other being a high-frequency electrode. A chuck power supply rod is electrically connected to the chuck electrode as a functional rod body, and a high frequency power supply rod is electrically connected to the high frequency electrode. The points where the chuck power supply rod and the high-frequency power supply rod are inserted into the through hole 60 and the lower structure thereof are exactly the same as the other functional rod bodies 62.
  • a ground electrode having the same structure as that of the dual-purpose electrode 66 may be provided, and the lower end of the functional bar 62 connected to the ground electrode may be grounded and used as a conductive bar, thereby grounding the ground electrode.
  • a heater power supply rod of a plurality of zones if one heater power supply rod is grounded, one heater power supply rod of the heat generator of each zone is commonly used as the grounded heater power supply rod. be able to.
  • the processing apparatus using plasma has been described as an example.
  • the present invention is not limited to this, and all processing apparatuses using a mounting table structure in which the heating unit 64 is embedded in the mounting table 58, for example.
  • the present invention can also be applied to a film forming apparatus using plasma CVD using plasma, a film forming apparatus using thermal CVD not using plasma, an etching apparatus, a thermal diffusion apparatus, a diffusion apparatus, a reforming apparatus, and the like. Therefore, the dual-purpose electrode 66 (including the chuck electrode and the high-frequency electrode), the thermocouple 80, and the members attached to them can be omitted.
  • the gas supply means is not limited to the shower head unit 24, and the gas supply means may be constituted by, for example, a gas nozzle inserted into the processing container 22.
  • thermocouples 80 and 81 are used here as temperature measuring means, the present invention is not limited to this, and a radiation thermometer may be used.
  • the optical fiber that conducts light used in the radiation thermometer becomes a functional rod, and this optical fiber is inserted into the through hole 60.
  • one or a plurality of functional rods are inserted into all the through holes.
  • the present invention is not limited to this, and the purge inert gas is exclusively used without inserting the functional rods. You may make it provide the through-hole for flowing.
  • the semiconductor wafer is described as an example of the object to be processed, but the present invention is not limited to this, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention a trait à une structure de table de montage permettant de monter un objet devant être traité qui est disposée dans un récipient de traitement conçu pour évacuer les gaz. La structure de table de montage est équipée : d'une table de montage permettant de monter ledit objet devant être traité, laquelle table de montage est constituée d'un corps diélectrique pourvu au moins d'un moyen de chauffage ; et d'une colonne de support qui est disposée à la verticale à partir du côté inférieur dudit récipient de traitement afin de supporter la table de montage, est dotée d'un bord supérieur qui est connecté à la surface inférieure de la table de montage et est constituée d'un corps diélectrique doté d'une pluralité de trous traversants formés dans la direction de la longueur à l'intérieur de la colonne de support.
PCT/JP2011/052637 2010-02-09 2011-02-08 Structure de table de montage et dispositif de traitement WO2011099481A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011800058115A CN102714172A (zh) 2010-02-09 2011-02-08 载置台构造和处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-026987 2010-02-09
JP2010026987A JP2011165891A (ja) 2010-02-09 2010-02-09 載置台構造及び処理装置

Publications (1)

Publication Number Publication Date
WO2011099481A1 true WO2011099481A1 (fr) 2011-08-18

Family

ID=44367754

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/052637 WO2011099481A1 (fr) 2010-02-09 2011-02-08 Structure de table de montage et dispositif de traitement

Country Status (4)

Country Link
JP (1) JP2011165891A (fr)
KR (1) KR20120116490A (fr)
CN (1) CN102714172A (fr)
WO (1) WO2011099481A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210043490A1 (en) * 2018-01-31 2021-02-11 Lam Research Corporation Electrostatic chuck (esc) pedestal voltage isolation
US11817341B2 (en) 2017-06-02 2023-11-14 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11835868B2 (en) 2018-03-20 2023-12-05 Lam Research Corporation Protective coating for electrostatic chucks

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6150557B2 (ja) * 2013-02-27 2017-06-21 日本特殊陶業株式会社 セラミックヒーター
WO2016117424A1 (fr) * 2015-01-20 2016-07-28 日本碍子株式会社 Structure de montage d'extrémité d'arbre
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
US10973088B2 (en) * 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
JP7057103B2 (ja) * 2017-02-14 2022-04-19 日本特殊陶業株式会社 加熱装置
KR102636178B1 (ko) 2018-02-16 2024-02-14 니혼도꾸슈도교 가부시키가이샤 유지 장치
KR102098556B1 (ko) * 2018-07-09 2020-04-17 주식회사 테스 기판지지유닛 및 이를 구비한 기판처리장치
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
JP2020092195A (ja) * 2018-12-06 2020-06-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7248607B2 (ja) 2020-02-03 2023-03-29 日本碍子株式会社 セラミックヒータ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278322A (ja) * 1987-05-11 1988-11-16 Fujitsu Ltd 気相成長装置
JP2004207465A (ja) * 2002-12-25 2004-07-22 Nhk Spring Co Ltd ステージ
JP2006049568A (ja) * 2004-08-04 2006-02-16 Nhk Spring Co Ltd ワークを加熱または冷却するための装置と、その製造方法
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2009054871A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
WO2009113451A1 (fr) * 2008-03-11 2009-09-17 東京エレクトロン株式会社 Structure de table de chargement et dispositif de traitement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890493B1 (ko) * 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278322A (ja) * 1987-05-11 1988-11-16 Fujitsu Ltd 気相成長装置
JP2004207465A (ja) * 2002-12-25 2004-07-22 Nhk Spring Co Ltd ステージ
JP2006049568A (ja) * 2004-08-04 2006-02-16 Nhk Spring Co Ltd ワークを加熱または冷却するための装置と、その製造方法
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2009054871A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
WO2009113451A1 (fr) * 2008-03-11 2009-09-17 東京エレクトロン株式会社 Structure de table de chargement et dispositif de traitement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11817341B2 (en) 2017-06-02 2023-11-14 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US20210043490A1 (en) * 2018-01-31 2021-02-11 Lam Research Corporation Electrostatic chuck (esc) pedestal voltage isolation
US11990360B2 (en) * 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11835868B2 (en) 2018-03-20 2023-12-05 Lam Research Corporation Protective coating for electrostatic chucks

Also Published As

Publication number Publication date
CN102714172A (zh) 2012-10-03
JP2011165891A (ja) 2011-08-25
KR20120116490A (ko) 2012-10-22

Similar Documents

Publication Publication Date Title
WO2011099481A1 (fr) Structure de table de montage et dispositif de traitement
JP4450106B1 (ja) 載置台構造及び処理装置
JP5347214B2 (ja) 載置台構造及び熱処理装置
JP2011061040A (ja) 載置台構造及び処理装置
CN101366099B (zh) 载置台结构以及热处理装置
KR20100067654A (ko) 재치대 구조물 및 처리 장치
WO2011081049A1 (fr) Structure de table de montage et appareil de traitement
JP2011054838A (ja) 載置台構造及び処理装置
JP4992630B2 (ja) 載置台構造及び処理装置
WO2012011488A1 (fr) Structure avec table de mise en place et appareil de traitement
JP2009149964A (ja) 載置台構造及び熱処理装置
JP4853432B2 (ja) 載置台構造及び処理装置
JP5376023B2 (ja) 載置台構造及び熱処理装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180005811.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11742225

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20127021449

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 11742225

Country of ref document: EP

Kind code of ref document: A1