WO2011070727A1 - Dispositif à faisceau d'ions focalisé et procédé de traitement à faisceau d'ions focalisé - Google Patents

Dispositif à faisceau d'ions focalisé et procédé de traitement à faisceau d'ions focalisé Download PDF

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Publication number
WO2011070727A1
WO2011070727A1 PCT/JP2010/006684 JP2010006684W WO2011070727A1 WO 2011070727 A1 WO2011070727 A1 WO 2011070727A1 JP 2010006684 W JP2010006684 W JP 2010006684W WO 2011070727 A1 WO2011070727 A1 WO 2011070727A1
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WO
WIPO (PCT)
Prior art keywords
ion beam
sample
processing
focused ion
cross
Prior art date
Application number
PCT/JP2010/006684
Other languages
English (en)
Japanese (ja)
Inventor
祐一 間所
裕一 金親
大西　毅
雄 関原
Original Assignee
株式会社 日立ハイテクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 日立ハイテクノロジーズ filed Critical 株式会社 日立ハイテクノロジーズ
Priority to US13/513,256 priority Critical patent/US8552397B2/en
Publication of WO2011070727A1 publication Critical patent/WO2011070727A1/fr

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0456—Supports
    • H01J2237/0458—Supports movable, i.e. for changing between differently sized apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention porte sur un fonctionnement pour un système optique, lequel fonctionnement permet d'observer un traitement à faisceau d'ions focalisé équivalent à celui d'un cas dans lequel une platine à échantillons (9) est inclinée mécaniquement. Dans un système optique à faisceau d'ions focalisé, un diaphragme (4), un déflecteur d'inclinaison (5), un dispositif de balayage de faisceau (7) et une lentille d'objectif (8) sont commandés de façon à rayonner un faisceau d'ions incliné par rapport à l'axe optique du système optique, de manière à réaliser ainsi un traitement de film mince et un traitement de profil sans réglage et opération associés pour une platine à échantillons. Le traitement de film mince et le traitement de profil avec un faisceau d'ions focalisé peuvent être automatisés et le rendement de production peut être amélioré. Par exemple, par application de la présente invention à un dispositif de contrôle de profil pour détecter un point d'extrémité, le traitement de profil peut être facilement automatisé.
PCT/JP2010/006684 2009-12-08 2010-11-15 Dispositif à faisceau d'ions focalisé et procédé de traitement à faisceau d'ions focalisé WO2011070727A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/513,256 US8552397B2 (en) 2009-12-08 2010-11-15 Focused ion beam device and focused ion beam processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009278104A JP5378185B2 (ja) 2009-12-08 2009-12-08 集束イオンビーム装置、及び集束イオンビーム加工方法
JP2009-278104 2009-12-08

Publications (1)

Publication Number Publication Date
WO2011070727A1 true WO2011070727A1 (fr) 2011-06-16

Family

ID=44145294

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/006684 WO2011070727A1 (fr) 2009-12-08 2010-11-15 Dispositif à faisceau d'ions focalisé et procédé de traitement à faisceau d'ions focalisé

Country Status (4)

Country Link
US (1) US8552397B2 (fr)
JP (1) JP5378185B2 (fr)
CZ (1) CZ2012386A3 (fr)
WO (1) WO2011070727A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116292A (ja) * 2012-11-15 2014-06-26 Hitachi High-Tech Science Corp 断面加工観察方法及び装置
WO2023032075A1 (fr) * 2021-09-01 2023-03-09 株式会社日立ハイテクサイエンス Dispositif à faisceau de particules chargées

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5872922B2 (ja) * 2012-02-21 2016-03-01 株式会社日立ハイテクサイエンス 試料作製方法及び装置
JP5952048B2 (ja) * 2012-03-23 2016-07-13 株式会社日立ハイテクサイエンス イオンビーム装置
TWI628702B (zh) 2012-10-05 2018-07-01 Fei公司 高「高寬比」結構之分析
WO2016129026A1 (fr) 2015-02-09 2016-08-18 株式会社日立製作所 Microscope ionique à miroirs et procédé de commande de faisceau d'ions
JP7079615B2 (ja) * 2018-02-15 2022-06-02 オリンパス株式会社 イオンビーム加工装置、及び、イオンビーム加工方法
DE102019201468A1 (de) 2019-02-05 2020-08-06 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren einer fotolithographischen Maske
JP7202642B2 (ja) * 2019-03-26 2023-01-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、及び制御方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
JPH09223726A (ja) * 1996-02-14 1997-08-26 Hitachi Ltd 荷電粒子ビームによる断面解析システムおよびその方法並びに荷電粒子ビーム処理装置
JP2004127930A (ja) * 2002-09-11 2004-04-22 Hitachi High-Technologies Corp 荷電粒子線装置及び荷電粒子線照射方法
JP2005108470A (ja) * 2003-09-29 2005-04-21 Hitachi High-Technologies Corp 荷電粒子線装置
JP2006054074A (ja) * 2004-08-10 2006-02-23 Hitachi High-Technologies Corp 荷電粒子ビームカラム
JP2008286652A (ja) * 2007-05-18 2008-11-27 Hitachi High-Technologies Corp 微細試料の加工方法，観察方法及び装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788659A (en) * 1980-11-21 1982-06-02 Jeol Ltd Electron ray device
JP3064339B2 (ja) 1990-06-29 2000-07-12 株式会社日立製作所 電子顕微鏡用試料加工方法、及び集束イオンビーム加工装置
US7435956B2 (en) * 2004-09-10 2008-10-14 Multibeam Systems, Inc. Apparatus and method for inspection and testing of flat panel display substrates
EP1577926A1 (fr) * 2004-03-19 2005-09-21 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Système à faisceau de particules à haute densité de courant
DE102004037781A1 (de) * 2004-08-03 2006-02-23 Carl Zeiss Nts Gmbh Elektronenstrahlgerät
US8581190B2 (en) * 2008-09-25 2013-11-12 Hitachi High-Technologies Corporation Charged particle beam apparatus and geometrical aberration measurement method therefor
US8227752B1 (en) * 2011-02-17 2012-07-24 Carl Zeiss Nts Gmbh Method of operating a scanning electron microscope

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
JPH09223726A (ja) * 1996-02-14 1997-08-26 Hitachi Ltd 荷電粒子ビームによる断面解析システムおよびその方法並びに荷電粒子ビーム処理装置
JP2004127930A (ja) * 2002-09-11 2004-04-22 Hitachi High-Technologies Corp 荷電粒子線装置及び荷電粒子線照射方法
JP2005108470A (ja) * 2003-09-29 2005-04-21 Hitachi High-Technologies Corp 荷電粒子線装置
JP2006054074A (ja) * 2004-08-10 2006-02-23 Hitachi High-Technologies Corp 荷電粒子ビームカラム
JP2008286652A (ja) * 2007-05-18 2008-11-27 Hitachi High-Technologies Corp 微細試料の加工方法，観察方法及び装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116292A (ja) * 2012-11-15 2014-06-26 Hitachi High-Tech Science Corp 断面加工観察方法及び装置
US9966226B2 (en) 2012-11-15 2018-05-08 Hitachi High-Tech Science Corporation Cross-section processing and observation method and cross-section processing and observation apparatus
WO2023032075A1 (fr) * 2021-09-01 2023-03-09 株式会社日立ハイテクサイエンス Dispositif à faisceau de particules chargées

Also Published As

Publication number Publication date
JP5378185B2 (ja) 2013-12-25
US20120235055A1 (en) 2012-09-20
US8552397B2 (en) 2013-10-08
CZ2012386A3 (cs) 2012-07-18
JP2011123998A (ja) 2011-06-23

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