WO2011069920A1 - Structure de couplage et procédé de fabrication associé - Google Patents

Structure de couplage et procédé de fabrication associé Download PDF

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Publication number
WO2011069920A1
WO2011069920A1 PCT/EP2010/068872 EP2010068872W WO2011069920A1 WO 2011069920 A1 WO2011069920 A1 WO 2011069920A1 EP 2010068872 W EP2010068872 W EP 2010068872W WO 2011069920 A1 WO2011069920 A1 WO 2011069920A1
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WIPO (PCT)
Prior art keywords
stiffener
coupling
deposition
buffer structure
soft buffer
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PCT/EP2010/068872
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English (en)
Inventor
Xiao Hu Liu
Dennis Newns
Lia Krusin-Elbaum
Glenn John Martyna
Bruce Gordon Elmegreen
Kuan-Neng Chen
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International Business Machines Corporation
Ibm United Kingdom Limited
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Application filed by International Business Machines Corporation, Ibm United Kingdom Limited filed Critical International Business Machines Corporation
Priority to CN201080055227.6A priority Critical patent/CN102640314B/zh
Priority to DE112010004700.6T priority patent/DE112010004700B4/de
Priority to GB1205373.2A priority patent/GB2485749B/en
Publication of WO2011069920A1 publication Critical patent/WO2011069920A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/10—Adjustable resistors adjustable by mechanical pressure or force
    • H01C10/103—Adjustable resistors adjustable by mechanical pressure or force by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator

Definitions

  • the present invention relates generally to integrated circuit devices and, more particularly, to coupling structures for coupling piezoelectric material generated stresses to devices formed in integrated circuits.
  • Complementary Field Effect Transistors support the standard computer architecture (CMOS) currently used in logic and memory.
  • FETs exploit high channel mobility to control few-carrier currents electrostatically.
  • CMOS computer architecture
  • limitations in this highly successful technology are appearing at current and future device scales. More specifically, difficulties in scalability arise from short channel effects and from few- dopant fluctuation effects.
  • the Hf0 2 gate oxide short channel solution brings about mobility limitations which are slowing clock speeds (Moore's Law scaling becomes negative).
  • the unfavorable FET geometry wherein the gate capacitance corresponds to gate area, but wherein current corresponds to channel width/channel length (resulting in a speed ⁇ l/L 2 ), means that the FET is a relatively high impedance device.
  • undesirably large-area FETs are required in "power hungry" applications, such as programming a PCM memory, driving long wires, or shutting down power to inactive circuit blocks.
  • CMOS complementary metal-oxide-semiconductor
  • a new technology in which straightforward lithographic processes can build multilayer structures could open up significant new applications such as high capacity multilayer memories and combinations of logic and memory at different levels optimized to reduce wiring length.
  • a coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
  • PE piezoelectric
  • PR piezoresistive
  • a coupling structure for coupling piezoelectric material generated stresses within a piezo-effect transistor (PET) device formed in an integrated circuit includes a rigid stiffener structure formed around the PET device, the PET device further comprising a piezoelectric (PE) material disposed between first and second electrodes, and a
  • piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material; and a soft buffer structure formed around the PET device, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by the applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
  • PR piezoresistive
  • a method of forming a coupling structure for coupling piezoelectric material generated stresses within a piezo-effect transistor (PET) device of an integrated circuit includes performing a first deposition of a rigid stiffener structure material over a substrate; forming a lower electrode of the PET device; performing a second deposition of the rigid stiffener structure material over the lower electrode and the first deposition of the rigid stiffener structure material; performing a first deposition of a soft buffer structure material within the second deposition of the rigid stiffener structure material, and atop the lower electrode; forming a piezoelectric (PE) material of the PET device within the first deposition of a soft buffer structure material, and atop the lower electrode;
  • PE piezoelectric
  • PR piezoresistive
  • Figures 1(a) and 1(b) are schematic diagrams of an exemplary piezo-effect transistor
  • PET PET device suitable for use in accordance with an embodiment of the invention
  • Figure 2 is a graph that illustrates pressure versus resistance properties of samarium selenide (SmSe);
  • Figure 3(a) illustrates the molecular structure of a photoconductive, porphyrin derivative known as ZnODEP
  • Figure 3(b) is a graph illustrating photocurrent as a function of distance during the compression of a ZnODEP film
  • FIG. 4 is a schematic cross-sectional diagram of another embodiment of a PET device having a coupling structure for coupling piezoelectric material generated stresses to a PCM or PR portion of the PET device, in accordance with an embodiment of the invention
  • Figures 5(a) through 5(c) illustrate a mechanical software pressure simulation for the PET device and coupling structure of Figure 4;
  • Figure 6 is a more detailed view of the simulated pressure distribution within the PR material;
  • Figure 7 is a graph illustrating the dependence of pressure on PCM or PR material thickness
  • Figures 8(a) and 8(b) are cross sectional views illustrating a mechanical model of a
  • Figures 9(a) through 9(1) are cross sectional views illustrating an exemplary method of forming a PET device and associated coupling structure, in accordance with a further embodiment of the invention.
  • Figures 10(a) through 10(e) are top down, cross sectional views illustrating exemplary sidewall arrangements of the stiffener structure, in accordance with further embodiments of the invention.
  • Figures 11(a) through 11(f) illustrate top capping layers above the sidewall arrangements of the stiffener structure in Figures 10(a) through 10(e).
  • a coupling structure for coupling piezoelectric material generated stresses to actuated devices formed in integrated circuits.
  • an actuated device could be, for example, a device formed of a material that exhibits a phase change or a resistance change from an applied stress thereto originating from a piezoelectric material.
  • an actuated device may be a nonvolatile memory incorporating a phase change material (PCM), wherein a piezo-effect transistor has a piezoresistive material driven by a voltage-controlled piezoelectric material.
  • PCM phase change material
  • a piezoelectric (PE) material either expands or contracts, depending on the polarity of the voltage applied across it.
  • a piezoresistive (PR) material is pressure sensitive, in that it may have a high or low resistance depending on its compression.
  • the juxtaposition of a PE material and a PR material in a way that allows the expansion and contraction of the PE material to compress and decompress the PR material results in a sensitive switch in which the resistance in the PR material can be controlled by varying the voltage across the PE material.
  • a three-terminal device with one terminal connected to a thin metallic layer between the PE and PR, another to the far side of the PE and a third to the far side of the PR forms a transistor-like switch that may be used for logic and memory functionalities.
  • a piezo-effect transistor or PET such a device is referred to as a piezo-effect transistor or PET.
  • the stress generated by application of a small voltage to the PE material should be effectively coupled to the PR/PCM so as to result in the desired resistance changes therein.
  • a coupling structure and associated process of forming the same is disclosed, wherein the coupling structure incorporates a rigid stiffener structure of a high modulus material.
  • the high modulus material is formed around the PET the device and over the substrate (e.g., silicon) and PE/PR (or PCM) stack, while a soft (low modulus) material or air gap is disposed between the stiffener and the PET device.
  • the stiffener structure clamps the PET device to the substrate (over which the PET is formed) so as to constrain the overall deformation of the PE and PR materials of the PET device.
  • the soft material or air gap disposed between the PET device and the stiffener gives the PE material freedom to move relative to the other device material.
  • the stress generated by an applied voltage to the PE material may be effectively used to drive the PCM or piezoresistive material for high performance.
  • Exemplary high modulus materials that may be used for the stiffener include silicon nitride (SiN) and tungsten (W), while exemplary low modulus material used for the buffer region may include a low-k material such as SiCOH, or possibly an airgap.
  • FIG. 1 a schematic diagram of a PET device 100 shown in an n-type configuration and a p-type configuration, respectively, along with a three-terminal symbolic representation thereof.
  • the PET device 100 is characterized by a sandwich structure (Fig. 1), in which a PE material 102 is sandwiched between a pair of electrodes, a first of which represents a PE electrode 104 or "gate" (control) terminal and a second of which represents a common electrode 106.
  • a PR material 108 is sandwiched between the common electrode 106 and a third electrode, which represents an output electrode 110.
  • the output electrode 110 comprises a metal layer (e.g., about 10-20 nanometers (nm) in thickness) that acts as a conductor through which significant current can be passed only if the PR material 108 is in the "ON" or low resistance state.
  • the common electrode 106 comprises another metal layer, which is moderately flexible so as to transmit the pressure applied by the PE material 102 therebeneath. This middle metal layer acts as the common terminal for the transistor.
  • the PE electrode or gate electrode 104 comprises another metal layer (e.g., about 10-20 nm in thickness) through which a programming voltage is applied to the PE layer 102.
  • each conductor electrode also provides a barrier layer against diffusion of the PE/PR materials.
  • the +/- indications depict the piezo polarization to be applied to the PE layer 102 in order for the PR layer 108 to be in the low resistance "ON" state, assuming that the PR conductance increases with pressure.
  • the sign of the response of the PE layer to a voltage across it (expansion or contraction) is set in a poling step during processing.
  • an exemplary height of the PET device 100 is about 35-120 nm, with dimensions of about 45-90 nm in the x-y plane. Furthermore, the PET device 100 is scalable and many of the problems associated with conventional FET scaling are absent. For example, carrier transport is enhanced by the favorable geometry of the PET, in that current flows
  • the PET does not have a dopant non-uniformity problem, it should be less impurity/geometry sensitive than FETs, due to short mean free paths and efficient screening by the high density of carriers.
  • the PET should have theoretically similar performance to that of FETs (as described in more detail below), and is capable of low ON impedance at very small scales.
  • FIG. 2 is a graph that illustrates pressure versus resistance properties of samarium selenide (SmSe), which is one suitable example of a PR material that may be used in the PET device.
  • SmSe is a semiconductor at ordinary pressures, and continuously converts to a metallic phase under pressures of about 4 GPa, and with a substantially large conductivity change (about 5 orders of magnitude) even at about 2 GPa. While the present invention embodiments may advantageously exploit the continuous conductivity change versus pressure of materials of the SmSe type, it is also contemplated that discontinuous transition materials can also be used for the PR layer in PET device.
  • Figure 3(a) illustrates the molecular structure of a photoconductive, porphyrin derivative known as ZnODEP.
  • Figure 3(b) is a graph illustrating photocurrent as a function of distance during the compression of a ZnODEP film.
  • continuous transition materials such as SmSe are expected to pressurize reversibly and their transition speed may be controlled essentially by the velocity of sound, while their materials degradation due to cycling should be minimal.
  • materials with a discontinuous transition is also expected to be effective.
  • PR materials that experience an insulator-to -metal transition under applied pressure include, but are not limited to: EuNi0 3 , Ni(S,Se) 2 , hexagonal BaTi0 3 g , InSb, and (2,5 DM-DCNQI) 2 Cu.
  • piezoelectric materials include, for example lead-zirconate- titanate (PZT), strontium-doped lead-zirconate-titanate (PSZT), PSN-PMN-P N-PSZT, PZNT 91/9 and PMNT 70/30 [Y.J. Yamashita and Y. Hosono, Jap. J. Appl. Phys. 43, 6679- 6682 (2004)] with piezoelectric coefficients ( ⁇ i 33 ) lying in the range of about 200-1500 pm/V.
  • PZT lead-zirconate- titanate
  • PSZT strontium-doped lead-zirconate-titanate
  • PSN-PMN-P N-PSZT PZNT 91/9
  • PMNT 70/30 Y.J. Yamashita and Y. Hosono, Jap. J. Appl. Phys. 43, 6679- 6682 (2004)
  • FIG. 4 there is shown a schematic cross-sectional diagram of another embodiment of a PET device with an associated coupling structure, generally indicated at 400.
  • FIGS 1(a) and 1(b) are used in subsequent figures. It will be noted that the cross-sectional area of the PR element 108 in the illustrated embodiment is less than that of the PE element 102.
  • the PET device (including PE element 102, PR element 108, and electrodes 104, 106, 110) is formed over a substrate 401, such as silicon for example. Insulating regions 402 (such as silicon dioxide (Si0 2 ) for example) are also shown for purposes of illustration.
  • the PET device is surrounded by a coupling structure that includes a stiffener structure 404, formed from a high Young's modulus (E) material, such as silicon nitride (Si 3 N 4 ) or tungsten (W) for example.
  • a high Young's modulus material may be on the order of about 60 gigapascals (GPa) or greater, and more specifically on the order of about 100 GPa or greater.
  • GPa gigapascals
  • Such a relatively high value of E ensures that the piezoelectric displacement of the PE element 102 is transmitted to the PR element 108, rather than to a surrounding medium such as insulating regions 402 or the substrate 401.
  • a soft (low Young's modulus) material spacer 406 Disposed between the stiffener structure 404 and the PET device is a soft (low Young's modulus) material spacer 406 or, alternatively, an air gap.
  • the soft spacer material 406, in an exemplary embodiment has a low Young's modulus on the order of about 20 GPa or less, and more specifically on the order of about 10 GPa or less.
  • Such a material may be, for example, SiCOH.
  • the stiffener structure 404 clamps the PET device to the substrate 401 (over which the PET is formed) so as to constrain the overall deformation of the PE and PR materials 102, 108, respectively of the PET device.
  • the soft material spacer 406 or air gap disposed between the PET device and the stiffener structure 404 gives the PE material 102 freedom to move relative to the other device material.
  • E z is the electric field in the z-direction
  • E denotes the Young's modulus of the given element (E PR or E PE )
  • t denotes film thickness of the given element (t PR or t PE ) parallel to the z-axis
  • A denotes surface area of the given element (A PR or A PE ) normal to the z-axis
  • the pressure rise is about 1 GPa.
  • an organic PR material such as ZnODEP
  • the exemplary PET with associated coupling device 400 is configured for a mechanical simulation, using engineering simulation software from
  • the simulated structure 400 also includes a silicon substrate 401, a soft spacer material (e.g., SiCOH or other process- compatible soft material) buffer structure 406 surrounding the cell, a silicon nitride (SiN) clamp or yoke stiffener structure 404 on the substrate 401 surrounding the transistor, and silicon dioxide (Si0 2 ) regions 402 within the SiN stiffener structure 404.
  • a soft spacer material e.g., SiCOH or other process- compatible soft material
  • SiN silicon nitride
  • Si0 2 silicon dioxide
  • the dimensions are defined by
  • the nitride stiffener structure 404 forms a rigid frame so that the electrically induced displacement of the PE material 102 is mechanically coupled to (and focused primarily towards) the PR material 108.
  • Tungsten forms the conducting electrodes (leads not shown), and is also mechanically rigid, while the low-K buffer structure 406 (being a soft material) does not impede the operating displacements significantly.
  • Figure 5(b) shows the stress distribution of the simulated structure 400 when 1.6 V is applied to the PE material 102 with a resulting electric field of 0.02 V/nm. It is noted that a contraction (tension) of the PE element 102 results in an expansion (negative pressure) of the PR element 108 and vice-versa. It will be seen from Figure 5(b) that the PE material 102 expands at its sides (due to its Poisson ratio), and exerts pressure at both the top and bottom sides thereof due to its voltage-induced expansion. Due to some degree of force
  • Figure 6 is a more detailed view of the simulated pressure distribution within the PR material 108. As will be noted, the pressure is seen to be fairly uniform therein, and on the order of about 0.6 GPa.
  • the PR material be soft relative to the piezo and environment, that the concentrator area ratio AJA c be large, that the piezo be thicker than the PR material, and that the environment have a "robust" aspect ratio (wider vs. taller), while the sample be the reverse (taller vs. wider).
  • Figure 8(b) illustrates a similar analysis, only with the insertion of a hard (e.g., tungsten) T-shaped force concentrator (s) between the piezo element and the PR material. This type of structure may be desirable in the event that the force concentrator area ratio is so large as to risk significant bending distortion in the driver structure.
  • the applied stress to the PR material is in accordance with the following expression:
  • the force concentrator (s) is made stiff, the PR material is made small and/or the piezo element is made large.
  • FIGs 9(a) through 9(1) are cross sectional views illustrating an exemplary method of forming a PET device and coupling structure as depicted in Figure 4.
  • the exemplary method described herein is fully compatible with existing CMOS processing techniques.
  • a substrate 401 e.g., silicon
  • an insulating layer 402 e.g., Si02
  • stiffener material 404 e.g. SiN
  • a portion of the stiffener material 404 is lithographically patterned and removed to define the location of the lower electrode of the PET device.
  • Figure 9(b) illustrates a diffusion barrier layer 902 (e.g., Ti/TiN) formed over the insulating layer 402, followed by deposition and/or plating of the electrode metal (e.g., W, Cu) and chemical mechanical polishing (CMP) as known in the art to form the lower electrode 104.
  • the electrode metal e.g., W, Cu
  • CMP chemical mechanical polishing
  • a second deposition of SiN stiffener material 404 covers the lower electrode 104, to a thickness roughly corresponding to the height of the PE material for the PET device.
  • a patterning step is used to open a portion of the stiffener material down to the top of the lower electrode 104, followed by deposition and CMP of the soft buffer structure material 406 that will surround the PET cell.
  • the soft buffer structure material is SiCOH, although an air gap could also be used, for example.
  • another patterning step is then used to open the buffer structure material 406 for the formation of another diffusion barrier layer 904 and PE material (e.g., PSZT) 102 thereupon.
  • PE material e.g., PSZT
  • a fourth deposition of SiN stiffener material 404 builds additional height roughly corresponding to the thickness of the PR phase change material of the PET device.
  • This additional SiN is then patterned and opened so as to allow deposition and CMP of additional soft buffer structure material 406 above the common electrode 106, as also shown in Figure 9(h).
  • a patterning step may then be performed so as to form vias for contacting the bottom and common electrodes 104, 106.
  • barrier layers 908 and conductive studs (e.g., W filled vias) 910 are formed in contact with bottom and common electrodes 104, 106.
  • the PR element 108 may comprise a stack of materials such as, for example, SmSe, SmS, etc.
  • the PR element 108 or a metal/PR stack may also include an intervening liner layer to the PR material (such as Ti, for example) to ensure good mechanical adhesion.
  • This PR material is shown planarized in Figure 9(j) prior to formation of a top contact thereto.
  • FIG 9(k) another diffusion barrier layer 912 is deposited and patterned so as to contact PR element 108, as well as the common and lower electrode studs 910.
  • a fifth deposition of SiN stiffener material 404 over the diffusion barrier layer 912 builds additional height roughly corresponding to the thickness of the top electrode for the PET device.
  • This additional SiN is then patterned and opened so as to allow deposition and CMP of metal that forms the top electrode 110 of the PET device, as well as electrodes 914 contacting the studs 910.
  • additional CMOS device processing as known in the art may continue.
  • a capping layer (not shown in Figure 9(1)) may be formed over the device.
  • FIG. 10(a) is a top down, cross sectional view that illustrates sidewalls of the stiffener structure 404 completely surrounding the PET device 100 and soft buffer structure 406.
  • Figure 10(b) illustrates an alternate sidewall arrangement, in which the PET device 100 and soft buffer structure 406 are partially surrounded by sidewalls of the stiffener structure 406 on three sides thereof.
  • Figures 10(c) and 10(d) depict the PET device 100 and soft buffer structure 406 partially surrounded by sidewalls of the stiffener structure 406 on two sides thereof.
  • Figure 10(e) depicts the PET device 100 and soft buffer structure 406 partially surrounded by sidewalls of the stiffener structure 406 on one side thereof.
  • Figure 10(a) illustrates the sidewalls of the stiffener structure 404 in a generally square configuration, other sidewall shapes are also contemplated including, for example, rectangular, circular, oval, etc.
  • Figures 11(a) through 11(e) illustrate various capping layer/opening options with respect to the sidewall arrangements of Figure 10(a) through 10(e), respectively.
  • a top capping layer 1102 of a relatively high modulus material e.g., SiN or other suitable dielectric
  • one or more openings 1104 are formed within the top capping so as to allow for etching and removal of a sacrificial material. It will be noted that the openings are not formed directly over the (center) portion of the structure, corresponding to the location of the PET device.
  • the capping layer 1102 remains intact in an embodiment, for example, where a material such as SiCOH will remain as the buffer structure material.

Abstract

La présente invention concerne une structure de couplage pour coupler des contraintes générées par un matériau piézoélectrique à un dispositif actionné d'un circuit intégré. Ladite structure comprend une structure de renfort rigide formée autour d'un matériau piézoélectrique (PE) et du dispositif actionné, le dispositif actionné comprenant un matériau piézorésistif (PR) dont la résistance électrique dépend d'une pression appliquée sur ledit matériau ; et une structure tampon souple formée autour du matériau PE et du matériau PR, la structure tampon étant disposée entre les matériaux PE et PR et la structure de renfort, la structure de renfort fixant les matériaux PE et PR à un substrat sur lequel les matériaux PE et PR sont formés, et la structure tampon souple permettant au matériau PE de se déplacer librement par rapport au matériau PR, couplant ainsi une contrainte générée par une tension appliquée sur le matériau PE au matériau PR afin de changer la résistance électrique du matériau PR.
PCT/EP2010/068872 2009-12-07 2010-12-03 Structure de couplage et procédé de fabrication associé WO2011069920A1 (fr)

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Application Number Priority Date Filing Date Title
CN201080055227.6A CN102640314B (zh) 2009-12-07 2010-12-03 耦合结构及其形成方法
DE112010004700.6T DE112010004700B4 (de) 2009-12-07 2010-12-03 Kopplungsstruktur und Verfahren zu deren Erzeugung
GB1205373.2A GB2485749B (en) 2009-12-07 2010-12-03 Coupling structure and method of forming such

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US12/632,154 2009-12-07
US12/632,154 US8247947B2 (en) 2009-12-07 2009-12-07 Coupling piezoelectric material generated stresses to devices formed in integrated circuits

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CN106104831A (zh) * 2014-03-14 2016-11-09 国立研究开发法人科学技术振兴机构 对于沟道采用了压电电阻体的晶体管以及电子电路
KR101851549B1 (ko) 2014-03-14 2018-04-24 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 피에조 저항체를 채널에 사용한 트랜지스터 및 전자회로
CN106104831B (zh) * 2014-03-14 2019-04-05 国立研究开发法人科学技术振兴机构 对于沟道采用了压电电阻体的晶体管以及电子电路

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US20110133603A1 (en) 2011-06-09
US8405279B2 (en) 2013-03-26
DE112010004700B4 (de) 2015-10-22
CN102640314B (zh) 2014-05-07
US20120270353A1 (en) 2012-10-25
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US8247947B2 (en) 2012-08-21

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