WO2011069791A1 - Composant semiconducteur optoélectronique - Google Patents

Composant semiconducteur optoélectronique Download PDF

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Publication number
WO2011069791A1
WO2011069791A1 PCT/EP2010/067707 EP2010067707W WO2011069791A1 WO 2011069791 A1 WO2011069791 A1 WO 2011069791A1 EP 2010067707 W EP2010067707 W EP 2010067707W WO 2011069791 A1 WO2011069791 A1 WO 2011069791A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
converter element
semiconductor chip
semiconductor device
side surfaces
Prior art date
Application number
PCT/EP2010/067707
Other languages
German (de)
English (en)
Inventor
Gertrud KRÄUTER
Bernd Barchmann
Krister Bergenek
Johann Ramchen
Michael Zitzlsperger
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to CN201080056260.0A priority Critical patent/CN102652369B/zh
Priority to US13/515,256 priority patent/US9029907B2/en
Priority to EP10788035.3A priority patent/EP2510558B1/fr
Priority to JP2012542430A priority patent/JP5863665B2/ja
Publication of WO2011069791A1 publication Critical patent/WO2011069791A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • Optoelectronic Semiconductor Device An optoelectronic semiconductor device is specified.
  • An object to be solved is to provide an optoelectronic semiconductor component in which radiation losses are particularly low and whose radiation exit surface appears particularly bright.
  • the component has at least one
  • Radiation decoupling leaves at least a portion of the electromagnetic radiation generated in the semiconductor chip, the semiconductor chip.
  • Semiconductor chip may be, for example, a
  • the luminescence diode chip can be a luminescent or laser diode chip which emits radiation in the range from ultraviolet to infrared light. Preferably emits the
  • Luminescence diode chip light in the visible or ultraviolet region of the spectrum of electromagnetic radiation.
  • the component has at least one converter element which is connected to the semiconductor chip at its radiation output surface Conversion of emitted from the semiconductor chip
  • the at least one converter element has one of
  • the at least one converter element is the
  • the converter element converts electromagnetic radiation emitted by the semiconductor chip into radiation of a larger wavelength.
  • this is at least one converter element on the
  • Radiation coupling surface of the at least one semiconductor chip applied may be connected by means of a connecting means with this.
  • Optoelectronic semiconductor device is a reflective
  • Reflective in this context means that the envelope for electromagnetic radiation incident on it from the semiconductor chip and / or the converter element is at least 80%, preferably more than 90%, reflective.
  • the reflective envelope may be a layer on exterior surfaces of the
  • the envelope is a potting, which is applied for example by casting the semiconductor chip and the converter element.
  • the envelopes are identical to one embodiment. According to at least one embodiment, the envelopes
  • Converter element completely or up to a predetermined height partially covered by the reflective sheath.
  • the optoelectronic semiconductor device is arranged downstream of the converter element.
  • the radiation can therefore escape unhindered from the converter element. It is at most possible that, due to the production, there are still material residues of the reflective coating on the first surface which, however, cover the first surface at most 10%, preferably at most 5%. According to at least one embodiment of the optoelectronic semiconductor device, this has at least one
  • the converter element has a surface facing away from the radiation coupling-out surface. Furthermore, the optoelectronic semiconductor component has a reflective envelope, wherein the reflective
  • the optoelectronic semiconductor component described here is based inter alia on the knowledge that a
  • Radiation efficiency means the ratio between the usable luminous energy that is coupled out of the semiconductor component and that generated primarily within the semiconductor chip
  • the optoelectronic semiconductor device described here makes use, inter alia, of the idea to provide a reflective envelope which covers the semiconductor chip and
  • Semiconductor component wrapped on side surfaces form fit, wherein a first surface of the converter element is free of the reflective sheath.
  • the electromagnetic radiation generated within the semiconductor chip which exits in part through side surfaces of the semiconductor chip, is reflected back into the semiconductor chip and, for example, in the direction of the converter element by the reflective enclosure.
  • the largest possible proportion of the generated in the semiconductor chip is reflected back into the semiconductor chip and, for example, in the direction of the converter element by the reflective enclosure.
  • Radiation guided in the direction of the converter element At least a part of the from the semiconductor chip over a
  • Direction independent means that the electromagnetic radiation converted in the converter element within the converter element of the
  • Radiation-converting particles is re-emitted in any preferred direction. After the conversion of electromagnetic radiation
  • This radiation component then strikes at least partially on the reflective envelope and is partially reflected back by this in the converter element.
  • the semiconductor chip Led semiconductor chip and can then be coupled out of the converter element and thus also from the semiconductor device. If a part of the radiation reflected back into the converter element, for example in the direction of the semiconductor chip, is reflected back, the reflection process can be repeated several times. It is conceivable that the reflection process is repeated until the corresponding radiation component decouples from the converter element.
  • the usable radiation decoupled from the semiconductor component is composed of the direct radiation component, that is to say the
  • the radiation component which leaves the semiconductor device by at least one (re) reflection on the envelope, together and is coupled out through the first surface of the semiconductor device.
  • both the radiation efficiency of the semiconductor device as by means of the envelope described here also increases a luminance at the first surface, whereby the first surface of the converter element for an external viewer, for example, significantly lighter
  • Luminance refers to the decoupled from the first surface luminous energy in relation to the surface of the first surface.
  • Radiation-emitting semiconductor chip light in the blue to ultraviolet region of the spectrum of electromagnetic radiation.
  • the reflective sheath is formed with a silicone or a mixture of a silicone or an epoxide into which
  • Radiation-reflecting particles are introduced, wherein the radiation-reflecting particles at least Zr02
  • Ultraviolet light has ZrO 2 in one
  • the reflective envelope is a potting, the extent of which in a direction perpendicular to the side surfaces along the side surfaces is at least locally different.
  • the reflective envelope does not have a uniform thickness along the side surfaces. It has been recognized that in such a shape of the reflective envelope these make the largest possible proportion reflected by impinging electromagnetic radiation.
  • the envelope does not project laterally beyond the converter element. It is conceivable that the wrapping in the lateral direction is flush with the first
  • the reflective sheath then completely envelopes the side surfaces of the converter element, thereby removing that from the reflective sheath into the converter element
  • the electromagnetic radiation generated in the semiconductor chip can therefore be the semiconductor component, except for any
  • the reflective sheath contributes to a particularly effective conversion of the
  • an optical element for example a lens
  • the first surface of the converter element which laterally projects beyond the semiconductor chip in its maximum lateral extent.
  • the Converter element formed with a ceramic material.
  • the converter element may then comprise a luminescence conversion material which is embedded in a matrix material, for example a glass ceramic or a ceramic.
  • the converter element is then a wafer. It is also possible that the converter element consists entirely of a ceramic luminescence conversion material.
  • the Converter element may then be a plate of such a ceramic luminescence conversion material.
  • the converter element has a thickness in the vertical direction which is at least twice as large as the thickness in
  • the surface portion of the side surfaces of the converter element as large as possible on the entire surface area of the converter element.
  • the radiation component reflected back from the reflective envelope into the converter element is increased, as a result of which the radiation efficiency and the luminance of the semiconductor component are further significantly increased.
  • Converter element has a thickness in the vertical direction of at least 50 ym to at most 500 ym.
  • the converter element has a thickness in the vertical direction of at least 50 to at most 150 ym.
  • At least 10% of the electromagnetic radiation emerging from the converter element emerge on the side surfaces of the converter element and are reflected by the reflective envelope.
  • Example in the converter element to be reflected back.
  • the converter element at least locally structured. "Structured” in this context means that at least in places elevations and subsidence are located on the first surface.
  • the at least locally structured surface can, for example, with
  • the structures may be relief or trench-like.
  • the first surface is pyramid-shaped. That means that the first surface is a
  • the first surface is structured by at least two different structuring profiles that alternate periodically along the first surface.
  • one structuring profile can be pyramidal elevations and the other structuring profile can be cylindrical elevations or a random roughening. It can be shown that such structured surfaces have a
  • a radiation-permeable adhesive layer is arranged between the semiconductor chip and the converter element.
  • the index of refraction may vary between the refractive index of the material directly adjacent to the adhesion layer
  • Randomness permeable means that the adhesive layer is permeable to at least 80%, preferably to at least 90% for electromagnetic radiation.
  • the adhesive layer is on the radiation coupling-out of the
  • Adhesive layer the semiconductor chip and the converter element from each other.
  • the adhesion layer avoids detachment (also delamination) of the converter element from the semiconductor chip.
  • the semiconductor chip and the converter element are therefore mechanically firmly connected to one another via the adhesive layer. Primarily generated in the semiconductor chip electromagnetic radiation can pass through the radiation coupling surface of the semiconductor chip through the adhesive layer and in the
  • the refractive index region provided for the adhesion layer offers the
  • Adhesion layer smaller than the refractive index of the at
  • the refractive index of the radiation-transmissive adhesive layer is additionally smaller than the refractive index of the
  • Converter element is. For example, is the
  • Refractive index of the radiation-transmissive adhesive layer in a range of 1.3 to 1.7, preferably in a range of 1.4 to 1.56.
  • the adhesive layer is then formed with a silicone, an epoxy, or a mixture of the two materials.
  • the materials mentioned show particularly good adhesion properties both to the material of the semiconductor chip and to the material of the converter element.
  • the semiconductor chip is fastened with its surface opposite the converter element on a carrier.
  • the carrier can be a carrier substrate which is different from a growth substrate.
  • the carrier is arranged with its surface opposite the semiconductor chip on a component carrier.
  • the component carrier may be formed with a plastic, a ceramic or a metal.
  • the component carrier is as a circuit board or, if the component carrier is metallic, as a support frame
  • the reflective envelope is applied by means of a jet process. It is also conceivable that the reflective envelope by means of a molding process, selective deposition (for example Plasma spray process), screen printing, sputtering or spraying
  • the reflective sheath is formed with a silicone or a mixture of a silicone or an epoxide into which
  • Radiation-reflecting particles are introduced, wherein the radiation-reflecting particles consist of at least one of the materials 1O2, BaSOzi, ZnO, Al x Oy ⁇ ZrC> 2 or contain one of said materials.
  • an extension of the reflective envelope in a direction perpendicular to the side surfaces is greater than 1000 ym.
  • the direction perpendicular to the side surfaces is the lateral direction.
  • Semiconductor component are detectable. In the following, the semiconductor component described here will be explained in more detail with reference to an embodiment and the associated figure.
  • FIG. 1 shows a schematic sectional view of an embodiment of an optoelectronic semiconductor device described here.
  • FIG. 2 shows a schematic sectional view of a further exemplary embodiment of one here
  • the semiconductor chip 3 is a thin-film light-emitting diode chip, wherein the carrier 10 is a carrier substrate, which is different from a growth substrate.
  • the carrier 10 with
  • the semiconductor chip 3 then comprises, for example, an epitaxially grown
  • the adhesive layer 8 is applied. On a radiation decoupling surface 6 of the semiconductor chip 3, the adhesive layer 8 is applied. On a the
  • the converter element 4 is applied, which is formed with a ceramic material, in which For example, radiation-converting materials, for example particles and / or fibers, are introduced.
  • the converter element 4 has a thickness D2 of 200 ym, wherein the thickness D ] _ of the semiconductor chip 3 is 100 ym.
  • the adhesion layer 8 and the converter element 4 are in direct contact, so that neither a gap nor an interruption forms between the converter element 4 and the adhesion layer 8.
  • the adhesion layer 8 allows the converter element 4 and the semiconductor chip 3 to be mechanically fixed via the
  • Adhesive layer 8 are interconnected.
  • the adhesive layer 8 is formed with a silicone.
  • a reflective enclosure 5 completely covers side surfaces 33 of the semiconductor chip 3, side surfaces 88 of the adhesion layer 8, and side surfaces 111 of the carrier 10
  • the reflective sheath 5 is formed as a potting. Is recognizable that for an external
  • Converter element 4 still protrudes from the reflective sheath.
  • An extension of the reflective envelope in a direction perpendicular to the side surfaces, for example in the lateral direction, may in particular be greater than 1000 ⁇ m.
  • the reflective sheath 5 may be with a silicone
  • a reflective envelope formed with such a material 5 is very resistant to aging.
  • silicones have the advantage of being irradiated by
  • Temperature resistance as, for example, epoxides. While epoxies can typically be heated to a maximum of about 150 ° C without being damaged, this is possible with silicones up to about 200 ° C. It is also conceivable that the
  • a mixture of a silicone and an epoxy is formed.
  • Radiation-reflecting particles around particles which consist of at least one of the materials 1O2, BaSOzi, ZnO, Al x Oy ⁇ ZrC> 2 or contain one of said materials.
  • Radiation-reflecting particles are used, since in such a wavelength range ZrC> 2 has particularly low absorption properties. In other words, in this case, a high proportion of electromagnetic radiation from the reflective sheath 5 is reflected.
  • the concentration of the organic compound Preferably, the concentration of the organic compound
  • Envelope 5 10 to 40% by weight Preferably, the
  • the reflective envelope 5 appears in a white tone because of the reflective envelope, preferably the whole
  • the white tone of the cladding can change the color contrast between the decoupled from a first surface 7 of the converter element 4
  • the coupled into the converter element 4 radiation 20 is at least partially converted in the converter element 4 and then reemitiert direction independent within the converter element 4. In the embodiment, 30% of the exiting from the converter element 4 electromagnetic
  • the radiation 20 coupled out of the converter element 4 through the first surface 7 therefore consists of a
  • the reflective envelope 5 also completely covers the side surfaces 111 of the carrier 10, it is avoided that radiation which has already left the optoelectronic semiconductor component 100 is reabsorbed again, for example via the side surfaces 111 of the carrier 10.
  • the first surface 7 of the converter element 4 is structured at least in places. In other words, the first surface 7 at least in places
  • Embodiment the radiation efficiency increased on the one hand by the reflective sheath 5 described here and on the other by the coupling-out 12, which can complement each other both effects advantageous.
  • Component carrier 1000 is arranged. In the present case is the
  • Component carrier 1000 a metallic support frame, on its surface at least in places a gold layer
  • the reflective sheath 5 covers
  • the reflective covers Enclosure 5 from the carrier 10 uncovered locations of a surface 1111 of the component carrier 1000 at least in places.
  • Is electromagnetic radiation that has already left the optoelectronic semiconductor device 100 for example by a the optoelectronic semiconductor device 100 in a radiation direction of the semiconductor device 100th
  • Component carrier 1000 reflected back again.
  • the reflective sheath 5 the reflective sheath 5
  • Reflectivity of the gold surface of the component carrier 1000 increases.
  • the reflective sheath 5 provides protection from environmental influences, for example
  • Corrosion of the component carrier 1000 for example of silver, is avoided.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant semiconducteur optoélectronique (100), comprenant : au moins une puce semiconductrice (3) émettant un rayonnement, avec une surface de couplage du rayonnement (6) au travers de laquelle au moins une partie du rayonnement électromagnétique produit dans la puce semiconductrice (3) quitte la puce semiconductrice (3) ; au moins un élément convertisseur (4) qui est placé en aval de la puce semiconductrice (3), sur sa surface de couplage du rayonnement (6), afin de convertir le rayonnement électromagnétique émis par la puce semiconductrice (3) et qui possède une première surface (7) tournée vers la surface de couplage du rayonnement (6) ; une enveloppe réfléchissante (5). L'enveloppe réfléchissante (5) enveloppe la puce semiconductrice (3) et au moins par endroits l'élément convertisseur sur les surfaces latérales (33, 44) en formant un assemblage par complémentarité de formes. La première surface (7) de l'élément convertisseur (4) est dégagée de l'enveloppe réfléchissante (5).
PCT/EP2010/067707 2009-12-11 2010-11-17 Composant semiconducteur optoélectronique WO2011069791A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201080056260.0A CN102652369B (zh) 2009-12-11 2010-11-17 光电子半导体构件
US13/515,256 US9029907B2 (en) 2009-12-11 2010-11-17 Optoelectronic semiconductor component
EP10788035.3A EP2510558B1 (fr) 2009-12-11 2010-11-17 Dispositif optoelectronique
JP2012542430A JP5863665B2 (ja) 2009-12-11 2010-11-17 オプトエレクトロニクス半導体部品

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009058006.9 2009-12-11
DE102009058006.9A DE102009058006B4 (de) 2009-12-11 2009-12-11 Optoelektronisches Halbleiterbauteil

Publications (1)

Publication Number Publication Date
WO2011069791A1 true WO2011069791A1 (fr) 2011-06-16

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ID=43536571

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/067707 WO2011069791A1 (fr) 2009-12-11 2010-11-17 Composant semiconducteur optoélectronique

Country Status (8)

Country Link
US (1) US9029907B2 (fr)
EP (1) EP2510558B1 (fr)
JP (1) JP5863665B2 (fr)
KR (1) KR20120117817A (fr)
CN (2) CN105023999B (fr)
DE (1) DE102009058006B4 (fr)
TW (1) TWI419377B (fr)
WO (1) WO2011069791A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9385258B2 (en) 2012-02-10 2016-07-05 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device with protective and reflective sheaths

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DE102010048162A1 (de) 2010-10-11 2012-04-12 Osram Opto Semiconductors Gmbh Konversionsbauteil
DE102012113003A1 (de) 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE202013101400U1 (de) * 2013-04-02 2014-07-03 Zumtobel Lighting Gmbh Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts
DE102013220790A1 (de) * 2013-10-15 2015-04-16 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
JP2015109337A (ja) * 2013-12-04 2015-06-11 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
CN105874615B (zh) * 2014-01-09 2020-01-03 亮锐控股有限公司 具有反射性侧壁的发光器件
DE102014114914A1 (de) * 2014-10-14 2016-04-14 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
DE102016105988A1 (de) * 2016-04-01 2017-10-05 Osram Opto Semiconductors Gmbh Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement

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WO2009069671A1 (fr) * 2007-11-29 2009-06-04 Nichia Corporation Dispositif émettant de la lumière et son procédé de fabrication
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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
KR20120117817A (ko) 2012-10-24
TW201131822A (en) 2011-09-16
EP2510558A1 (fr) 2012-10-17
CN102652369B (zh) 2015-07-01
TWI419377B (zh) 2013-12-11
US20120299041A1 (en) 2012-11-29
JP2013513934A (ja) 2013-04-22
US9029907B2 (en) 2015-05-12
CN105023999A (zh) 2015-11-04
DE102009058006B4 (de) 2022-03-31
DE102009058006A1 (de) 2011-06-16
CN105023999B (zh) 2018-07-17
EP2510558B1 (fr) 2019-06-26
CN102652369A (zh) 2012-08-29
JP5863665B2 (ja) 2016-02-16

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