WO2011066725A1 - 混合晶向积累型全包围栅cmos场效应晶体管 - Google Patents

混合晶向积累型全包围栅cmos场效应晶体管 Download PDF

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WO2011066725A1
WO2011066725A1 PCT/CN2010/070636 CN2010070636W WO2011066725A1 WO 2011066725 A1 WO2011066725 A1 WO 2011066725A1 CN 2010070636 W CN2010070636 W CN 2010070636W WO 2011066725 A1 WO2011066725 A1 WO 2011066725A1
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region
channel
gate
effect transistor
field effect
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PCT/CN2010/070636
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English (en)
French (fr)
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肖德元
王曦
张苗
陈静
薛忠营
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中国科学院上海微系统与信息技术研究所
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Priority to US12/810,574 priority Critical patent/US8264042B2/en
Publication of WO2011066725A1 publication Critical patent/WO2011066725A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

Definitions

  • the present invention relates to the field of semiconductor manufacturing technology, and in particular to an integrated crystal-type all-enclosed gate CMOS field effect transistor.
  • CMOS Complementary Meta l Oxide Semiconductor
  • I. ff device leakage current
  • I.J device leakage current
  • I.J threshold voltage
  • Silicon-on-insulator refers to a substrate technology that replaces traditional bulk silicon with an "engineered" substrate.
  • the substrate is usually composed of the following three layers: a thin monocrystalline silicon top layer, An etched circuit is formed thereon; a relatively thin buried oxide layer (BOX, bur ied oxide), that is, an insulating silicon dioxide intermediate layer; a very thick body type bottom silicon village bottom layer, whose main function is to provide mechanical equipment for the upper two layers support. Since the oxide layer in the SOI structure separates the silicon film layer from the bottom layer of the bulk silicon substrate, the large-area ⁇ - ⁇ junction will be replaced by a dielectric lectr ici solat ion.
  • BOX bur ied oxide
  • the source region and the drain region extend down to the buried oxide layer, effectively reducing leakage current and junction capacitance.
  • this can be improved by reducing the thickness of the silicon, whether it is a partially depleted or fully depleted design.
  • Channel-based inversion mode compared to conventional planar CMOS devices Double-gate or triple-gate fin FETs with good gate control and scaling down capability
  • the S0I ultra-thin body device can also work in the channel overall accumulation mode. Compared with the fully depleted FET, the S0I ultra-thin body device flows through the entire S0I ultra-thin body in the accumulation mode, which improves the carrier mobility, reduces the low-frequency noise of the device, and reduces the short-channel effect. It is very beneficial, while increasing the threshold voltage of the device and avoiding the polysilicon gate depletion effect.
  • the impurity doping type of the source region and the drain region is the same as the channel impurity doping type, the conductive carriers are majority carriers (multiple sub-), and the source region and the drain region are respectively in the trench.
  • the conductive carriers are majority carriers (multiple sub-)
  • the source region and the drain region are respectively in the trench.
  • the hole mobility at the (110) Si village current is more than doubled in the ⁇ 110> crystal orientation compared with the conventional (100) Si substrate.
  • the electron mobility is the highest at the (100) Si village.
  • IBM et al. developed a new technology for manufacturing CMOS circuits using mixed crystal orientation Si. Yang M, leong M, Shi L et al. introduced their technology in the article "High performance CMOS fabricated on hybrid substrate with different crystal orientations" published in the Digest of Technical Paper of International Electron Devices Meeting, 2003.
  • the NMOS device is fabricated on the (100) crystal Si surface with buried oxide layer, while the PMOS device is fabricated on the (110) crystal plane Si, and the performance of the PMOS device is greatly improved.
  • I. Ff 100 ⁇ / ⁇ m
  • (110) PMOS device drive current on the bottom of the village increased by 45%.
  • the disadvantage is that the PMOS device fabricated on the epitaxial layer does not have a buried oxide layer to isolate it from the substrate, so device performance is still affected.
  • the technical problem to be solved by the present invention is to provide a mixed crystal orientation accumulation type full enclosure gate CMO S field. Effect transistor.
  • a mixed crystal orientation accumulation type full-enclosed gate CMOS field effect transistor comprising: a semiconductor substrate, a MN region having a second channel above the semiconductor substrate, and a first channel above the ⁇ OS region a PM0S region and a gate region, the PMOS region and the MN region further including source and drain regions respectively located at opposite ends of the channel, wherein: the first channel and the second channel have a cross section
  • the waist shape is composed of a semicircle at the left and right ends, and a rectangle which is connected to the semicircle at the left and right ends in the middle, and the first channel adopts a p-type (110) S i material, and the second channel adopts an n-type (100) S i material;
  • the gate region completely surrounds the surfaces of the first channel and the second channel; between the PMOS region and the NMOS region, a first buried oxide layer is disposed; A second buried oxide layer is disposed between the NMOS region and the semiconductor substrate.
  • the present invention also provides a hybrid crystal orientation accumulation type full-enclosed gate CMOS field effect transistor, comprising: a semiconductor substrate, a PMOS region having a first channel above a semiconductor substrate, and a second trench above the PMOS region a PMOS region and a gate region, the PMOS region and the NMOS region further comprising source and drain regions respectively located at opposite ends of the channel, wherein: the first channel and the second channel are horizontal
  • the cross section is a waist shape, and is composed of a semicircle at both ends of the left and right sides, and a rectangle connecting the semicircles at the left and right ends in the middle portion, and the first channel adopts a p-type (110) S i material, and the second channel An n-type (100) S i material is used; the gate region completely surrounds a surface of the first channel and the second channel; and a first buried layer oxide is disposed between the PM0S region and the NMOS region a layer; a second buried oxide layer is disposed between the PM
  • the device structure of the invention is simple, compact and highly integrated. In the accumulated working mode, current flows through the entire racetrack-shaped channel, has high carrier mobility, low-low frequency device noise, and can avoid polysilicon gate depletion. And short channel effect, which increases the threshold voltage of the device.
  • FIG. la-lc is a schematic structural diagram of a device according to Embodiment 1 of the present invention: Figure la is a top view;
  • Figure lb is a cross-sectional view of Figure la along XX ';
  • Figure lc is a cross-sectional view of the figure la along the ZZ ' direction.
  • FIG. 2 is a perspective view showing a channel portion of a device structure according to Embodiment 1 of the present invention.
  • FIG 3 is a schematic cross-sectional view of a channel structure of the present invention.
  • 4a is a top plan view of a transistor in the first embodiment of the present invention.
  • Figure 4b is a cross-sectional view along line XX' of Figure 4a.
  • 5a-5c are schematic diagrams showing the structure of a device according to a second embodiment of the present invention:
  • Figure 5a is a plan view
  • Figure 5b is a cross-sectional view along line XX' of Figure 5a;
  • Figure 5c is a cross-sectional view of Figure 5a taken along the line ZZ'.
  • 6a is a top plan view of a transistor in a second embodiment of the present invention.
  • Figure 6b is a cross-sectional view of Figure 6a taken along XX '.
  • the hybrid crystal orientation accumulation type full-enclosed gate CMOS field effect transistor of the present embodiment includes: a semiconductor substrate 100, a PMOS region 400 having a first channel 401, and a GaN having a second channel 301.
  • the cross sections of the first channel 401 and the second channel 301 are both waist-shaped (racetrack shape), and the first channel 401 is preferably a p-type (110) S i material, the second channel 301 is preferably an n-type (100) S i material.
  • the gate region 500 completely surrounds the surfaces of the first channel 401 and the second channel 301.
  • the shape of the cross section of the first channel 401 and the second channel 301 is a semicircle of the left and right ends and a semicircle of the middle and the left and right ends.
  • the rectangles connected to each other are formed together.
  • it can be decomposed into a dual gate channel structure and a cylindrical full-enclosed gate channel structure that operate independently in parallel.
  • d is the diameter of the semicircle at the left and right ends of the cross section
  • w is the width of the middle rectangle
  • the total width of the raceway cross section is d+w
  • x is the thickness of the gate dielectric layer.
  • a first buried oxide layer 201 (BOX) is provided to isolate them to avoid mutual interference between the regions.
  • a second buried oxide layer 202 is provided in addition to the portion covered by the gate region 500. The second buried oxide layer 202 can isolate the ⁇ OS region 300 or the PMOS region 400 from the semiconductor substrate 100, thereby effectively reducing leakage current, thereby improving device performance.
  • the PM0S region 400 and the MN region 300 further include source and drain regions respectively located at opposite ends of the channel.
  • the source region 403 of the PM0S region and the drain region 402 of the PMOS region are heavily doped p-type (110) S i material or p-type GeS i material; the source region 303 of the MN region and the drain region 302 of the MN region are Heavy doped n-type (100) S i material or n-type S iC material.
  • the source-drain region located in the lower layer has a length parallel to the channel direction greater than the length of the source-drain region located in the upper layer, so that the source and drain regions of the lower layer are exposed, thereby facilitating the extraction of the electrodes. Referring to FIG. 1 a , the width of both ends of the source/drain region perpendicular to the channel direction is greater than the diameter of the channel, that is, the PM0S region 400 and the MN region 300 are fin-shaped with a narrow intermediate end.
  • the gate region 500 includes: a gate dielectric layer 501 completely surrounding the surfaces of the first trench 401 and the second trench 301, and a gate completely surrounding the gate dielectric layer 501 Material layer 502.
  • the gate material layer 502 is a metal or an all-metal silicide; the metal or all-metal silicide is selected from the group consisting of titanium, nickel, tantalum, tungsten, tantalum nitride, tungsten nitride, titanium nitride, titanium silicide And one or a combination of tungsten silicide and nickel silicide; the material of the gate dielectric layer 502 may be one of a silicon dioxide, a silicon oxynitride compound, a silicon oxycarbide compound or a germanium-based high dielectric constant material.
  • the semiconductor substrate 100 is a S i village bottom, and may be other semiconductor materials such as Ge, Ga, and In.
  • the first channel 401 and the first The length L of the two-channel 402 is 10-50 nm, and the diameter d of the semicircle at both ends of the cross section is 10-80 nm, and the width W of the central rectangle is 10 - 200 nm.
  • the first buried oxide layer 201 and the second buried oxide layer 202 each have a thickness of 10 to 200 nm, and the materials thereof are all silicon dioxide.
  • a complete transistor can be obtained by subsequent semiconductor fabrication processes.
  • Fig. 4a is a plan view of the transistor of the embodiment, and
  • Fig. 4b is a cross-sectional view thereof.
  • the subsequent semiconductor manufacturing process includes: forming a gate on the gate material layer 502, a source region 403 in the PMOS region, a source region 303 in the MN region, a drain region 402 in the PMOS region, and a MN A source and a drain are formed on the drain region 302 of the region, respectively.
  • an insulating medium dielectric spacer structure 503 is further disposed on both sides of the gate, and the material thereof may be silicon dioxide, silicon nitride or the like.
  • the device structure of the hybrid crystal orientation accumulation type full-enclosed gate CMOS field effect transistor of the present embodiment includes: a semiconductor substrate 100' having a first channel 401' The PM0S region 400', the ⁇ OS region 300' having the second channel 301', and one gate region 500'.
  • the cross section of the first channel 401' and the second channel 301' are both waist-shaped, and are formed by a semicircle at the left and right ends, and a rectangle which is connected with the semicircle at the left and right ends in the middle, and the first groove
  • the track 401' is preferably a p-type (110) S i material
  • the second channel 301 ' is preferably an n-type (100) S i material.
  • the gate region 500' completely surrounds the surfaces of the first channel 401' and the second channel 301'.
  • a first buried oxide layer 201' (BOX) is also provided to isolate them to avoid between the regions.
  • a second buried oxide layer 202' is provided in addition to the portion covered by the gate region 500'.
  • the PM0S region 400' and the MN region 300' further include source regions 403', 303' and drain regions 402', 302' located at opposite ends of the channel.
  • the gate region 500' includes: a gate dielectric layer 50 that completely surrounds the surfaces of the first trench 401' and the second trench 301', and a gate material layer 502' that completely surrounds the gate dielectric layer 50.
  • the difference from the first embodiment is that the MN area 300 ′ of the second embodiment is above the PMOS area 400 ′, and the PMOS area 400 ′ is above the semiconductor ridge 100 ′, except for the second embodiment.
  • the other technical solutions of the first embodiment are the same.
  • a complete transistor can be obtained through subsequent semiconductor fabrication processes.
  • Fig. 6a is a plan view of the transistor of the embodiment, and Fig. 6b is a cross-sectional view thereof.
  • the subsequent semiconductor manufacturing process includes: forming a gate on the gate material layer 502', a source region 403' in the PMOS region, a source region 303' in the NMOS region, and a drain region 402' in the PM0S region.
  • the source and drain electrodes are respectively formed on the drain region 302' of the NM0S region.
  • An insulator dielectric spacer isolation structure 503' is also formed on both sides of the gate, and the material thereof may be silicon dioxide, silicon nitride or the like.
  • the beneficial effects of the mixed crystal orientation type full-enclosed gate CMOS field effect transistor of the present invention are as follows:
  • the PM0S region and the ⁇ OS region adopt different Si direction Si materials, in particular, the first channel adopts p-type (110) S i material, the second channel uses n-type (100) S i material, and the accumulated CMOS conductive carrier is majority carrier (multi-sub), ie p-type (110) Holes in the S i material and electrons in the n-type (100 ) S i material.
  • the hole mobility at the (110) S i village current is more than doubled in the ⁇ 110> crystal orientation compared with the conventional (100) S i substrate.
  • the electron mobility is the highest at (100) S i.
  • the invention adopts two different SiS materials with different crystal orientations, which is beneficial to further increase the carrier migration rate; on the other hand, the PM0S region and the Li OS region have both buried oxide layers and the bottom of the village. Isolation can effectively reduce leakage current, enabling the device to have better performance and further scaling down.
  • the present invention employs a full-enclosed gate channel structure having a waist-shaped (racetrack shape) cross-section which can be decomposed into a double-gate channel structure and a cylindrical full-enclosed gate channel structure which operate independently in parallel. The advantages of this configuration are: cum increases the channel cross-sectional area (increased rectangular portion), increasing the drive current of the device while maintaining the electrical integrity of the device (round channel).
  • the present invention adopts a relatively accurate fluid dynamics model and a quantum mechanical density grading model, and considers and applies a mobility degradation model related to doping and surface roughness for three-dimensional.
  • Technical simulation. The simulation results show that the CMOS tube of the present invention flows through the entire racetrack-shaped channel in the accumulated operation mode, has high carrier mobility, low-low frequency device noise, and can avoid polysilicon gate depletion and short channel effect. , increases the threshold voltage of the device.
  • the technical solutions of the scope and scope should be covered by the scope of the patent application of the present invention.

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Description

混合晶向积累型全包围栅 CMOS场效应晶体管
技术领域 本发明涉及半导体制造技术领域， 尤其涉及一种混合晶向的积累型全包 围栅 CMOS场效应晶体管。
背景技术 互补金属氧化物半导体 （ CMOS , Complementary Meta l Oxide Semiconductor )器件是在将 N型金属氧化物半导体晶体管（丽 OS )与 P型金 属氧化物半导体晶体管 （PM0S ) 集成在同一块硅片上的半导体器件。 随着器 件尺寸的不断缩小， CMOS技术将常规平面 CMOS器件沟道长度按比例继续缩小 所面临的日益严重的挑战是如何在控制器件漏电流（I。ff)的同时保持较高的电 流驱动能力（I。J并且阈值电压有 4艮好的稳定性。 短沟道效应 (SCE)成为所有常 规平面 CMOS器件按比例进一步缩小所难以逾越的一道障碍， 它导致器件特性 的退化， 为进一步缩小常规平面 CMOS器件设置限制。
绝缘体上硅（SOI , S i l icon On Insulator)是指以 "工程化的" 基板代替 传统的体型村底硅的基板技术， 这种基板通常由以下三层构成： 薄的单晶硅 顶层， 在其上形成蚀刻电路； 相当薄的埋层氧化层（BOX, bur ied oxide ) , 即绝缘二氧化硅中间层； 非常厚的体型村底硅村底层， 其主要作用是为上面 的两层提供机械支撑。 由于 S0I 结构中氧化层把其上的硅膜层与体型村底硅 村底层分隔开来，因此大面积的 ρ-η结将被介电隔离（ die lectr i c i solat ion ) 取代。 源极 ( source region )和漏极 ( dra in region ) 向下延伸至埋层氧化 层， 有效减少了漏电流和结电容。 对于沟道长度以纳米为长度单位的器件来 讲， 主要由栅极电场来控制沟道电导而不受漏极散射电场影响变得非常重要。 对于 S0I 器件来讲， 不管是采用部分耗尽还是全耗尽设计， 均可以通过减小 硅的厚度改善上述问题。 与常规平面 CMOS器件相比， 基于沟道反型工作模式 的双栅或三栅鳍形场效应管具备 ^艮好的栅控制及按比例缩小能力， 可以作为
22 nm及以下节点可供选择的器件。 与 SO I超薄体可以工作于沟道整体反型模 式一样， S0I超薄体器件也可以工作于沟道整体积累模式。 与全耗尽型场效应 管相比， S0I超薄体器件在积累工作模式下， 电流流过整个 S0I超薄体， 这对 于提高载流子迁移率， 减小器件低频噪声以及短沟道效应是非常有益的， 同 时增大了器件的阈值电压以及避免多晶硅栅耗尽效应。 其中， 积累模式场效 应晶体管， 其源区和漏区的杂质掺杂类型与沟道杂质掺杂类型相同， 导电载 流子为多数载流子（多子） ， 源区和漏区分别于沟道之间不存在 PN结， 因此 又被称为无 PN结场效应晶体管。 由于载流子迁移率为体材料迁移率， 因而具 备较高的载流子迁移率。
另一方面， 在 Si材料中， 空穴迁移率在（ 110) Si村底电流沿 <110>晶向 流动与传统的 （100) Si村底相比增加一倍以上。 而电子迁移率在 （100) Si 村底是最高的。 为充分利用载流子迁移率依赖于 Si表面晶向的优势， IBM公 司的 Yang等人开发出一种采用混合晶体取向 Si村底制造 CMOS电路的新技术。 Yang M， leong M， Shi L等人于 2003年在《Digest of Technical Paper of International Electron Devices Meeting》 杂志上发表的文章 《High performance CMOS fabricated on hybrid substrate with different crystal orientations》 中介绍了他们的技术。 其通过键合和选择性外延技术， 丽 OS 器件制作在具有埋层氧化层的（100)晶面 Si表面上， 而 PMOS器件制作在（110) 晶面 Si上， PMOS器件性能取得极大提高。 当 I。ff = 100 ηΑ/ μ m, (110)村底 上的 PMOS器件驱动电流提高了 45%。其缺点是制作在外延层上的 PMOS器件没 有埋层氧化层将其与村底隔离， 因而器件性能还是受到影响。
鉴于此， 本发明为了进一步提升器件性能， 提高器件进一步按比例缩小 的能力， 提出一种新型的工作于积累模式的全包围栅 CMOS场效应晶体管。
发明内容 本发明要解决的技术问题在于提供一种混合晶向积累型全包围栅 CMO S场 效应晶体管。
为了解决上述技术问题， 本发明采用如下技术方案：
一种混合晶向积累型全包围栅 CMOS场效应晶体管，其包括：半导体村底、 位于半导体村底之上具有第二沟道的丽 OS区域、 位于匪 OS 区域之上具有第 一沟道的 PM0S区域及一个栅区域， 所述 PM0S区域和丽 OS区域还包括分别位 于其沟道两端的源区及漏区， 其特征在于： 所述第一沟道及第二沟道的横截 面均为腰形， 由左右两端的半圓， 及中部的与左右两端半圓过渡连接的矩形 共同构成， 且所述第一沟道采用 p型（110 ) S i材料， 所述第二沟道采用 n型 ( 100 ) S i材料； 所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在 所述 PM0S区域与丽 0S区域之间， 设有第一埋层氧化层； 在所述丽 0S区域与 所述半导体村底之间， 设有第二埋层氧化层。
本发明还提供一种混合晶向积累型全包围栅 CMOS场效应晶体管，其包括： 半导体村底、 位于半导体村底之上具有第一沟道的 PM0S区域、 位于 PM0S 区 域之上具有第二沟道的丽 0S区域及一个栅区域， 所述 PM0S区域和匪 0S区域 还包括分别位于其沟道两端的源区及漏区， 其特征在于： 所述第一沟道及第 二沟道的横截面均为腰形， 由左右两端的半圓， 及中部的与左右两端半圓过 渡连接的矩形共同构成， 且所述第一沟道采用 p型（110 ) S i材料， 所述第二 沟道采用 n型（ 100 ) S i材料； 所述栅区域将所述第一沟道及第二沟道的表面 完全包围； 在所述 PM0S 区域与丽 0S区域之间， 设有第一埋层氧化层； 在所 述 PM0S区域与所述半导体村底之间， 设有第二埋层氧化层。
本发明的器件结构筒单、 紧凑， 集成度高， 在积累工作模式下， 电流流 过整个跑道形的沟道， 具备高载流子迁移率， 低低频器件噪声， 并可避免多 晶硅栅耗尽及短沟道效应， 增大了器件的阈值电压。
附图说明 图 la-lc为本发明实施例一的器件结构示意图： 图 la为俯视图；
图 lb为图 la沿 XX ' 的剖面图；
图 lc为图 la沿 ZZ ' 方向的剖视图。
图 2为本发明实施例一的器件结构沟道部分的立体示意图。
图 3为本发明的沟道结构的横截面示意图。
图 4a为本发明实施例一中晶体管的俯视图。
图 4b为图 4a沿 XX ' 的剖视图。
图 5a-5c为本发明实施例二的器件结构示意图：
图 5a为俯视图；
图 5b为图 5a沿 XX ' 的剖面图；
图 5c为图 5a沿 ZZ ' 方向的剖视图。
图 6a为本发明实施例二中晶体管的俯视图。
图 6b为图 6a沿 XX ' 的剖视图。
具体实施方式 下面结合附图进一步说明本发明的器件结构， 为了示出的方便附图并未 按照比例绘制。
实施例一
如图 la-lc所示， 本实施例的混合晶向积累型全包围栅 CMOS场效应晶体 管包括： 半导体村底 100、 具有第一沟道 401的 PM0S区域 400、 具有第二沟 道 301的丽 OS区域 300及一个栅区域 500。所述第一沟道 401及第二沟道 301 的横截面均为腰形（跑道形） ， 且所述第一沟道 401优选为 p型（110 ) S i材 料， 所述第二沟道 301优选为 n型（ 100 ) S i材料。 所述栅区域 500将所述第 一沟道 401及第二沟道 301的表面完全包围。 其中， 所述第一沟道 401及第 二沟道 301 横截面的形状， 由左右两端的半圓以及中部的与左右两端半圓过 渡连接的矩形共同构成。 如图 3 所示， 其可分解成独立并行工作的一个双栅 沟道结构和一个圓柱体全包围栅沟道结构。 其中 d 为横截面左右两端半圓的 直径， w为中部矩形的宽度， 该跑道形横截面的总宽度则为 d+w, t。x是栅介 质层的厚度。
在所述 PM0S区域 400与丽 OS区域 300之间， 除了栅区域 500覆盖的区 域以外， 还设有第一埋层氧化层 201 ( BOX )将它们隔离， 以避免区域之间的 相互干扰。 在所述丽 OS区域 300与所述半导体村底 100 (即 S i村底）之间， 除了栅区域 500所覆盖的部分以外，还设有第二埋层氧化层 202。 所述的第二 埋层氧化层 202可以将所述匪 OS区域 300或所述 PM0S区域 400与所述半导 体村底 100隔离， 有效的减少漏电流， 从而提高器件性能。
其中， 所述 PM0S区域 400和丽 OS区域 300还包括分别位于其沟道两端 的源区及漏区。 PM0S区域的源区 403及 PM0S区域的漏区 402为重掺杂的 p型 ( 110 ) S i材料或 p型的 GeS i材料； 丽 OS区域的源区 303及丽 OS区域的漏 区 302为重掺杂的 n型（100 ) S i材料或 n型的 S iC材料。 位于下层的源漏区 平行于沟道方向的长度大于位于其上层源漏区的长度， 使下层的源漏区暴露 出来， 从而方便电极的引出。 参看图 l a , 所述的源漏区两端垂直于沟道方向 的宽度大于沟道的直径， 即所述 PM0S区域 400和丽 OS区域 300呈中间细两 端宽大的鳍形。
请继续参看图 lb、 l c , 所述栅区域 500包括： 将所述第一沟道 401及第 二沟道 301的表面完全包围的栅介质层 501以及将所述栅介质层 501完全包 围的栅材料层 502。 其中， 所述的栅材料层 502为金属或全金属硅化物； 所述 的金属或全金属硅化物选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅 化钛、 硅化钨、 硅化镍中的一种或其组合； 所述的栅介质层 502 的材料可以 是二氧化硅、 氮氧硅化合物、 碳氧硅化合物或铪基的高介电常数材料中的一 种。 另外， 所述半导体村底 100为 S i村底， 也可为 Ge、 Ga、 In等其他半导 体材料。
在器件尺寸设计上， 请参看图 l c、 图 2及图 3 , 所述第一沟道 401及第 二沟道 402长度 L为 10-50nm,其横截面左右两端半圓的直径 d均为 10-80nm, 中部矩形的宽度 W为 10 - 200nm。所述第一埋层氧化层 201和第二埋层氧化层 202的厚度均为 10_200nm, 其材料均为二氧化硅。
在上述图 lb所示器件结构的基础上， 经后续半导体制造工艺即可得到完 整的晶体管。 图 4a为本实施例晶体管的俯视图， 图 4b为其剖视图。 其中， 所述的后续半导体制造工艺包括： 在所述栅材料层 502 上制作栅极、 在所述 PM0S区域的源区 403、 丽 OS区域的源区 303、 PM0S区域的漏区 402、 丽 OS区 域的漏区 302 上分别制作源极、 漏极。 为优化器件性能， 栅极两侧还设有绝 缘体介质侧墙隔离结构 503 , 其材料可以是二氧化硅、 氮化硅等。
实施例二
本发明的另一种表示形态如图 5a-5c 所示， 本实施例的混合晶向积累型 全包围栅 CMOS场效应晶体管的器件结构包括： 半导体村底 100' 、 具有第一 沟道 401' 的 PM0S区域 400' 、 具有第二沟道 301' 的匪 OS区域 300' 及一 个栅区域 500' 。 所述第一沟道 401' 及第二沟道 301' 的横截面均为腰形， 由左右两端的半圓， 及中部的与左右两端半圓过渡连接的矩形共同构成， 且 所述第一沟道 401' 优选为 p型 （110 ) S i材料， 所述第二沟道 301 ' 优选为 n型（100 ) S i材料。 所述栅区域 500' 将所述第一沟道 401 ' 及第二沟道 301 ' 的表面完全包围。 在所述 PM0S区域 400' 与匪 OS区域 300' 之间， 除了栅 区域 500' 覆盖的区域以外， 还设有第一埋层氧化层 201' ( BOX )将它们隔 离， 以避免区域之间的相互干扰。 在所述 PM0S区域 400' 与所述半导体村底 100' (即 S i村底）之间， 除了栅区域 500' 所覆盖的部分以外， 还设有第二 埋层氧化层 202' 。 其中， 所述 PM0S区域 400' 和丽 OS区域 300' 还包括分 别位于其沟道两端的源区 403' , 303' 及漏区 402' , 302' 。所述栅区域 500 ' 包括： 将所述第一沟道 401' 及第二沟道 301' 的表面完全包围的栅介质层 50 以及将所述栅介质层 50 完全包围的栅材料层 502' 。
与实施例一的不同之处在于： 实施例二的丽 OS 区域 300' 在 PM0S 区域 400' 之上， PM0S区域 400' 在半导体村底 100' 之上， 除此之外， 实施例二 与实施例一的其他技术方案相同。
在图 5c所示器件结构的基础上， 经后续半导体制造工艺即可得到完整的 晶体管。 图 6a为本实施例晶体管的俯视图， 图 6b为其剖视图。 其中， 所述 的后续半导体制造工艺包括：在所述栅材料层 502' 上制作栅极、在所述 PM0S 区域的源区 403' 、 NM0S 区域的源区 303' 、 PM0S 区域的漏区 402' 、 NM0S 区域的漏区 302' 上分别制作源极、 漏极。栅极两侧还制备有绝缘体介质侧墙 隔离结构 503' , 其材料可以是二氧化硅、 氮化硅等。
本发明的混合晶向积累型全包围栅 CMOS场效应晶体管的有益效果在于： 一方面， 其 PM0S区域和匪 OS区域采用了不同晶向的 S i材料， 特别是第 一沟道采用了 p型的 （110 ) S i材料， 第二沟道采用了 n型的 （100 ) S i材 料， 而积累型 CMOS的导电载流子为多数载流子（多子） ， 即 p型的 （110 ) S i材料中的空穴和 n型的 （100 ) S i材料中的电子。 经过多次的实验表明： 空穴迁移率在（110 ) S i 村底电流沿 <110>晶向流动与传统的 （100 ) S i 村底 相比增加一倍以上。 而电子迁移率在（ 100 ) S i村底是最高的。 本发明有针对 性的采用两种不同晶向的 S i材料， 有利于进一步提高其载流子的迁移速率； 另一方面， PM0S区域和丽 OS区域同时具有埋层氧化层将其与村底隔离， 能有 效的减少漏电流， 使器件具备更好的性能及进一步按比例缩小的能力。 此外， 本发明采用了横截面为腰形 （跑道形） 的全包围栅沟道结构， 其可分解成独 立并行工作的一个双栅沟道结构和一个圓柱体全包围栅沟道结构。 这种结构 的优点在于： 暨增大了沟道横截面积 （增加了矩形部分） ， 提高了器件的驱 动电流， 而同时又保持器件的电完整性（圓形沟道） 。
为了进一步分析实施例一及实施例二中器件的性能， 本发明采用了较为 精准的流体力学模型和量子力学密度渐变模型， 考虑并应用了与掺杂以及表 面粗糙有关的迁移率退化模型进行三维技术仿真。 仿真结果表明， 本发明的 CMOS管在积累工作模式下， 电流流过整个跑道形的沟道， 具备高载流子迁移 率， 低低频器件噪声， 并可避免多晶硅栅耗尽及短沟道效应， 增大了器件的 阈值电压。 和范围的技术方案均应涵盖在本发明的专利申请范围当中。

Claims

权利要求书
1. 一种混合晶向积累型全包围栅 CMOS场效应晶体管，其包括： 半导体村 底、 位于半导体村底之上具有第二沟道的丽 OS区域、 位于匪 OS区域 之上具有第一沟道的 PM0S区域及一个栅区域， 所述 PM0S区域和 NM0S 区域还包括分别位于其沟道两端的源区及漏区， 其特征在于：
所述第一沟道及第二沟道的横截面均为腰形，由左右两端的半圓， 及中部的与左右两端半圓过渡连接的矩形共同构成， 且所述第一沟道 采用 p型 （ 110 ) S i材料， 所述第二沟道采用 n型 （ 100 ) S i材料； 所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在所述 PM0S区域与丽 OS区域之间， 设有第一埋层氧化层； 在所述丽 0S区域与所述半导体村底之间， 设有第二埋层氧化层。
2. 根据权利要求 1所述混合晶向积累型全包围栅 CMOS场效应晶体管，其 特征在于： 所述 PM0S区域的源区及漏区为重掺杂的 p型 （110 ) S i材 料或 GeS i材料。
3. 根据权利要求 1所述混合晶向积累型全包围栅 CMOS场效应晶体管，其 特征在于： 所述丽 0S区域的源区及漏区为重掺杂的 n型 （100 ) S i材 料或 S iC材料。
4. 根据权利要求 1混合晶向积累型全包围栅 CMOS场效应晶体管，其特征 在于： 所述栅区域包括： 将所述第一沟道及第二沟道的表面完全包围 的栅介质层以及将所述栅介质层完全包围的栅材料层。
5. 根据权利要求 4混合晶向积累型全包围栅 CMOS场效应晶体管，其特征 在于： 所述的栅介质层的材料为二氧化硅、 氮氧硅化合物、 碳氧硅化 合物或铪基的高介电常数材料中的一种。
6. 根据权利要求 4混合晶向积累型全包围栅 CMOS场效应晶体管，其特征 在于： 所述的栅材料层选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化 钛、 硅化钛、 硅化钨或硅化镍中的一种或其组合。
7. 根据权利要求 1所述混合晶向积累型全包围栅 CMOS场效应晶体管，其 特征在于： 所述半导体村底的材料为 S i。
8. 根据权利要求 1所述混合晶向积累型全包围栅 CMOS场效应晶体管，其 特征在于： 所述第一埋层氧化层和第二埋层氧化层的厚度均为 10_200nm。
9. 根据权利要求 1所述混合晶向积累型全包围栅 CMOS场效应晶体管，其 特征在于： 所述第一埋层氧化层和第二埋层氧化层的材料均为二氧化 硅。
10.—种混合晶向积累型全包围栅 CMOS场效应晶体管，其包括： 半导体村 底、 位于半导体村底之上具有第一沟道的 PM0S区域、 位于 PM0S区域 之上具有第二沟道的 NM0S区域及一个栅区域， 所述 PM0S区域和 NM0S 区域还包括分别位于其沟道两端的源区及漏区， 其特征在于：
所述第一沟道及第二沟道的横截面均为腰形，由左右两端的半圓， 及中部的与左右两端半圓过渡连接的矩形共同构成， 且所述第一沟道 采用 p型 （ 110 ) S i材料， 所述第二沟道采用 n型 （ 100 ) S i材料； 所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在所述 PM0S区域与丽 0S区域之间， 设有第一埋层氧化层； 在所述 PM0S区域与所述半导体村底之间， 设有第二埋层氧化层。
11.根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述 PM0S区域的源区及漏区为重掺杂的 p型 （11 0 ) S i 材料或 GeS i材料。 根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述丽 OS区域的源区及漏区为重掺杂的 n型 （ 100 ) S i 材料或 S iC材料。 根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述栅区域包括： 将所述第一沟道及第二沟道的表面完 全包围的栅介质层以及将所述栅介质层完全包围的栅材料层。 根据权利要求 1 3所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述的栅介质层的材料为二氧化硅、 氮氧硅化合物、 碳 氧硅化合物或铪基的高介电常数材料中的一种。 根据权利要求 1 3所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述的栅材料层选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅化钛、 硅化钨或硅化镍中的一种或其组合。 根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述半导体村底的材料为 S i。 根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述第一埋层氧化层和第二埋层氧化层的厚度均为 10_200nm。 根据权利要求 10所述混合晶向积累型全包围栅 CMOS场效应晶体管， 其特征在于： 所述第一埋层氧化层和第二埋层氧化层的材料均为二氧 化硅。
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