WO2011063933A1 - Substrat à contact métallique et procédé de fabrication de celui-ci - Google Patents

Substrat à contact métallique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2011063933A1
WO2011063933A1 PCT/EP2010/007096 EP2010007096W WO2011063933A1 WO 2011063933 A1 WO2011063933 A1 WO 2011063933A1 EP 2010007096 W EP2010007096 W EP 2010007096W WO 2011063933 A1 WO2011063933 A1 WO 2011063933A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
metal
region
contacting
curable
Prior art date
Application number
PCT/EP2010/007096
Other languages
German (de)
English (en)
Inventor
Cordula Kohn
Rainer Kübler
Sebastian Müller
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to EP10787284A priority Critical patent/EP2508048A1/fr
Publication of WO2011063933A1 publication Critical patent/WO2011063933A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0116—Porous, e.g. foam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0263—Details about a collection of particles
    • H05K2201/0272—Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10977—Encapsulated connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1147—Sealing or impregnating, e.g. of pores
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning

Definitions

  • the present invention relates to a metallically contacted substrate in which at least one surface of the substrate is wholly or partially provided with a metallic contact.
  • the metallic contact is provided with a matrix material. According to the invention, a method for the production of such a substrate is likewise specified.
  • the firing represents a temperature step in which, for example, the solar cell is contacted or printed printed circuit traces of sensors or chips are firmly connected to the existing, usually brittle material.
  • One in the literature (US 2005 / 118.362 A) method described in the preparation of elekt ⁇ step contacting of solar cells is the up-take of pastes. In these pastes are aluminum
  • the paste is applied to the silicon surface as a layer by screen printing (US 4,388,346) or pad printing.
  • the printed layer has a porous sponge-like structure, which is still present after the subsequent temperature step.
  • the organic binder is first removed by evaporation and / or pyrolysis.
  • the second part of the firing involves the alloy of metal
  • % Silver in the paste prevents the formation of oxide the surface, so that an interconnection using conventional solders is possible.
  • a reliable ohmic contact between the two layers (aluminum / aluminum silver) obviouslyzustel ⁇ len, the masks for printing in the manner made that the pastes overlap approximately 0.5 to 1 mm in the contact area to each other.
  • a mechanical notch represents ⁇ .
  • a metallically contacted substrate in which at least one surface of the substrate is wholly or partly provided with a metallic contact, wherein the metallic contacting includes at least one partial area at least one matrix material, that of the mechanical stabilization and / or adhesion the contacting on the substrate surface is used, wherein the matrix material is present in a part or the Ge ⁇ entirety of the pores of the contacting.
  • the metallic contacting preferably contains at least one first metal in a first region I, in a second region II, at least one second metal other than the first metal, and in a third region III lying between the first I and second regions II both the first and the second metal, wherein at least the third region III comprises at least one matrix material which serves for the mechanical stabilization and / or the adhesion of the contacting of at least the third region III to the substrate surface and / or the two metal species with one another.
  • further regions may be present or are arranged iteratively on the surface of the substrate.
  • a further layer can be applied to these areas.
  • the substrate according to the invention which can represent, for example, an electronic component, thus has, in a preferred embodiment, a contacting which is subdivided into three subregions, wherein the contacting in the first region is formed from a different metal than in the second region.
  • the third region lying between the first and second regions has both materials and can therefore be referred to as an "overlap region".
  • this area By the matrix material included in this third region it is achieved that a structural, i. mechanical reinforcement, this area, which, as known from the prior art, has particular brittleness is guaranteed, so that the
  • the technical field of application of the substrates is the use, for example, in the production of solar cells with the aim of increasing the strength of these components, thus reducing the rejects due to breakage in production, transport to module manufacturers as well as soldering and interconnection in module production.
  • the long-term stability is increased in the module, since the mechanical resistance ⁇ to environmental temperature cycles that lead to mechanical stresses in the solar cells is increased by the use of Gumatrix.
  • module herstel ⁇ ler that can solidify the purchased solar cells before Verlö ⁇ processing into modules by Grepix and thus both the disturbing production process to the module and for the years of service under a variety of environmental conditions to ⁇ make it more reliable.
  • Another area of application is sensor technology and electronics. In these disciplines manager ⁇ will pave and contact techniks vom partly just ⁇ if produced by screen printing and subsequent firing me ⁇ on-metal pastes. Even with this appli ⁇ dung increasing the mechanical Reliable ⁇ ness of conductors is possible.
  • Preferred matrix materials are selected from the group consisting of cured polymers, cured thermoplastics and / or cured thermosets, preferably cured chemical adhesives, preferably polyaddition adhesives and / or two-component adhesives, especially epoxy resins.
  • the metallic contact is porous, the matrix material is present in part or all of the pores of the contact.
  • the porosity of the contacting results from the manufacturing process, after which a fine metal paste is applied to the substrate to be contacted and connected in the firing step with this.
  • the metal material that is to form the contact is at least partially melted.
  • the fine metal powder used in such Pastes are included, besides, form small droplets that at least partially wet the surface of the substrate and making electrical Verbin ⁇ dung to the substrate after cooling.
  • the droplets formed during the firing step to keep due to its surface tension at their droplet form, so that only a partial connection to further me ⁇ -metallic droplets takes place and forms a porous, spongy network of metal after cooling.
  • the metallic contact is due to production, both in the areas I, II and III open-pored, that is porous.
  • Preferred pore sizes of the contacting are between 10 nm and 1 mm, preferably between 500 nm and 10 ⁇ m, particularly preferably between 1 ⁇ m and 5 ⁇ m.
  • the pore size can also assume dimensions that are in the range of the layer thickness of the contact.
  • Preferred metals of the metallic contacting are selected from the group consisting of aluminum, silver, copper, iron, gold, cobalt, nickel, platinum, chromium, vanadium, titanium, a mixture of silver and aluminum and / or combinations thereof.
  • the first metal is selected from the group consisting of aluminum, and / or
  • the second metal is selected from the group consisting of silver or mixtures of silver and aluminum.
  • the contacting, for example, in the first region I can be formed of aluminum, while the contacting in the second region II beispielswei ⁇ se is a silver contact or an alloy or mixture of aluminum and silver.
  • Erfindungsge ⁇ Gurss are in this case in the transition region III in front of both aluminum and silver in separate areas, so that due to the different nature of the two metals here see a lower mechanical resistance of the predetermined contact at the interface. This is remedied according to the invention by adding a matrix material.
  • the contact layer is formed in layers, wherein a second metal-containing layer of contacting directly on the surface of the substrate and another, the first metal-containing layer containing the second metals
  • the layered formation of the contacting in the third region may be configured opposite as described above.
  • a gradient-wise transition from the metal of the second region II in the direction of the first region I takes place, i.
  • the layer thickness of the second metal-containing layer decreases starting from the second region II in the direction of the first region I, and / or b) the layer thickness of the first metal contained ⁇ the layer decreases, starting from the first region I in the direction of the second region II.
  • Preferred layer thicknesses of the metallic PLEASE CONTACT ⁇ tion are in this case in the first region (I), in the second region (II) and / or in the third region (III) inde ⁇ pendently between 10 nm and 2 mm, preferably between 10 ym and 100 ym, more preferably Zvi ⁇ rule 25 and 45 ym.
  • the metallic contacting may contain further substances which may be, for example, the nonvolatile components of standard pastes which are applied as metallic contacting. For example, these are selected from the group of glasses such as borosilicate glass, quartz glass, lime
  • Soda glass or plastics and / or mixtures or combinations thereof Soda glass or plastics and / or mixtures or combinations thereof.
  • the components come into question of the substrate for the individual compo-, that is, the substrate itself on which the electrical contact is applied are in this case selected from the Grup ⁇ pe consisting of a) electrically insulating substrates, in particular
  • PCB printed circuit boards
  • electrically conductive substrates or semiconductors in particular Si, Ge, GaN, Sic, GaP, GaAs, InP, InSb, InAs, GaSb, GaN, A1N, InN, Al x Ga x As, In x Ga x N, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, Hg (1-x) Cd x Te, BeSe, BeTe and / or HgS and / or c) solar cells containing wafers and / or substrates from the materials mentioned under a) and / or b).
  • the substrates may be designed such that they contain, for example, a base material from the materials listed under a) above, whereupon a further material layer of the materials mentioned under b) is applied.
  • This possibility is realized, for example, with thin-film solar cells.
  • a process for the preparation ⁇ position of a substrate described above is also specified, which is characterized in that, at least introduced at least in a partial region in a part or all of the pores of the porous metallic contacting a curable matrix material, with the at least a metal of the metallic contact and / or the surface of the substrate kon ⁇ takted and then cured.
  • at least one hardenable matrix material is introduced at least into the third region III of the contacting and contacted and hardened with the at least one first metal, the at least one second metal and / or the surface of the substrate.
  • the matrix material which is curable, is introduced into the pores of a porous metallic contacting.
  • a curable matrix materials thereby come insbeson ⁇ particular a curable polymer, curable thermoplastic and / or curable thermoset, preferably curable chemical adhesives, preferably Polyadditionsklebstoffen and / or two-component adhesives, in particular epoxy resins used.
  • Preferred viscosities of the curable matrix matrix are in a range between 1 and 100,000 mPas, preferably 10,000 and 50,000 mPas, particularly preferably between 15,000 and 40,000 mPas.
  • temperature ranges in which the curing is carried out ⁇ are between 20 and 400 ° C, preferably between 50 and 300 ° C, in particular between 80 and 120 ° C.
  • the figure shows a metallically contacted substrate 1, which may be, for example, a brittle material, such as silicon or glass, on which a Kontak- tion is applied, which has three areas I, II and III.
  • the metallic contacting consists of a first metal 2, which may in the present case be, for example, aluminum, and of an aluminum paste which has been applied to the substrate 1 and subsequently fired.
  • the aluminum particles originally forming the aluminum paste are melted during the firing step and partially solidify into larger agglomerates, resulting in a porous structure of the contacting.
  • the metallic contact has a further region II, in which the electrical contacting of the substrate I by another metal 3, for example silver, is formed.
  • ER also the preparation of the silver contact, for example, followed by applying a silver paste and a subsequent firing step, where ⁇ together with the silver particles initially contained in the silver paste partially through melting and re-solidification, to form a porous structure.
  • a layer of the second metal 3 is applied directly to the substrate 1, the metal layer made of the first metal being applied over this metal layer.
  • a matrix material 5 which may be, for example, an adhesive introduced, the mechanical hardening of the Schich- th of the first metal II and the second metal III is used. Likewise, this results in an improved adhesion of the contacting on the substrate 1. 'Thus, according to the invention, a significantly higher stability of such produced substrates is achieved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un substrat (1) à contact métallique avec lequel au moins une surface du substrat est totalement ou partiellement recouverte d'un contact métallique (2, 3). À des fins de stabilisation mécanique, le contact métallique est muni d'un matériau matriciel (5). L'invention concerne également un procédé de fabrication d'un substrat de ce type.
PCT/EP2010/007096 2009-11-30 2010-11-23 Substrat à contact métallique et procédé de fabrication de celui-ci WO2011063933A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10787284A EP2508048A1 (fr) 2009-11-30 2010-11-23 Substrat à contact métallique et procédé de fabrication de celui-ci

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009056308.3 2009-11-30
DE102009056308A DE102009056308A1 (de) 2009-11-30 2009-11-30 Metallisch kontaktiertes Substrat sowie Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
WO2011063933A1 true WO2011063933A1 (fr) 2011-06-03

Family

ID=43466206

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/007096 WO2011063933A1 (fr) 2009-11-30 2010-11-23 Substrat à contact métallique et procédé de fabrication de celui-ci

Country Status (3)

Country Link
EP (1) EP2508048A1 (fr)
DE (1) DE102009056308A1 (fr)
WO (1) WO2011063933A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017050702A1 (fr) * 2015-09-23 2017-03-30 Siemens Aktiengesellschaft Procédé pour l'isolation électrique d'un conducteur électrique, notamment d'un module composant, module conducteur et module composant correspondants

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9648749B1 (en) * 2015-11-17 2017-05-09 Northrop Grumman Systems Corporation Circuit card assembly and method of providing same

Citations (9)

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Publication number Priority date Publication date Assignee Title
US561101A (en) 1896-02-24 1896-06-02 George j
US4388346A (en) 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
WO1984003586A1 (fr) * 1983-03-02 1984-09-13 Dennis R Mitchell Procede de fixation de conducteurs electriques sur un substrat isolant
GB2202999A (en) * 1987-03-25 1988-10-05 Pa Consulting Services Electrical contacts adhered together
WO1993005545A1 (fr) * 1991-09-04 1993-03-18 Morganite Electrical Carbon Limited Procede de formation d'une jonction electroconductrice entre du carbone et un metal, et un article comprenant une jonction conductrice entre du carbone et un metal
EP0549159A2 (fr) * 1991-12-06 1993-06-30 International Business Machines Corporation Procédé et adhésif pour réaliser des connexions électriques et mécaniques
US20050118362A1 (en) 2003-11-29 2005-06-02 Mu-Hyun Kim Thermal transfer element with light-to-heat conversion layer having concentration gradient
US7022266B1 (en) * 1996-08-16 2006-04-04 Dow Corning Corporation Printable compositions, and their application to dielectric surfaces used in the manufacture of printed circuit boards
US20080182011A1 (en) * 2007-01-26 2008-07-31 Ng Hou T Metal and metal oxide circuit element ink formulation and method

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WO1992022928A1 (fr) * 1991-06-11 1992-12-23 Mobil Solar Energy Corporation Cellule solaire amelioree et methode de fabrication
JPH10335267A (ja) * 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
DE10032386A1 (de) * 2000-07-06 2002-01-17 Michael Zimmer Verfahren zur Herstellung einer Kontaktsammelschiene für Solarzellen und Kontaktsammelschiene für Solarzellen
US7521515B2 (en) * 2003-06-03 2009-04-21 Dai Nippon Printing Co., Ltd. Filler layer for solar cell module and solar cell module using same
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Publication number Priority date Publication date Assignee Title
US561101A (en) 1896-02-24 1896-06-02 George j
US4388346A (en) 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
WO1984003586A1 (fr) * 1983-03-02 1984-09-13 Dennis R Mitchell Procede de fixation de conducteurs electriques sur un substrat isolant
GB2202999A (en) * 1987-03-25 1988-10-05 Pa Consulting Services Electrical contacts adhered together
WO1993005545A1 (fr) * 1991-09-04 1993-03-18 Morganite Electrical Carbon Limited Procede de formation d'une jonction electroconductrice entre du carbone et un metal, et un article comprenant une jonction conductrice entre du carbone et un metal
EP0549159A2 (fr) * 1991-12-06 1993-06-30 International Business Machines Corporation Procédé et adhésif pour réaliser des connexions électriques et mécaniques
US7022266B1 (en) * 1996-08-16 2006-04-04 Dow Corning Corporation Printable compositions, and their application to dielectric surfaces used in the manufacture of printed circuit boards
US20050118362A1 (en) 2003-11-29 2005-06-02 Mu-Hyun Kim Thermal transfer element with light-to-heat conversion layer having concentration gradient
US20080182011A1 (en) * 2007-01-26 2008-07-31 Ng Hou T Metal and metal oxide circuit element ink formulation and method

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Title
C. KOHN ET AL.: "Analyses of warpage effects induced by passivation and electrode coatings in silicon solar cells", 22ND EUPVSEC, 3 September 2007 (2007-09-03)
See also references of EP2508048A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017050702A1 (fr) * 2015-09-23 2017-03-30 Siemens Aktiengesellschaft Procédé pour l'isolation électrique d'un conducteur électrique, notamment d'un module composant, module conducteur et module composant correspondants

Also Published As

Publication number Publication date
EP2508048A1 (fr) 2012-10-10
DE102009056308A1 (de) 2011-06-01

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