WO2011050945A1 - Scie à fil comprenant une zone de fil et des buses de nettoyage - Google Patents

Scie à fil comprenant une zone de fil et des buses de nettoyage Download PDF

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Publication number
WO2011050945A1
WO2011050945A1 PCT/EP2010/006541 EP2010006541W WO2011050945A1 WO 2011050945 A1 WO2011050945 A1 WO 2011050945A1 EP 2010006541 W EP2010006541 W EP 2010006541W WO 2011050945 A1 WO2011050945 A1 WO 2011050945A1
Authority
WO
WIPO (PCT)
Prior art keywords
wire
nozzle
field
wire saw
cutting
Prior art date
Application number
PCT/EP2010/006541
Other languages
German (de)
English (en)
Inventor
Antonio Deagostini
Simon Habegger
Original Assignee
Meyer Burger Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger Ag filed Critical Meyer Burger Ag
Publication of WO2011050945A1 publication Critical patent/WO2011050945A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work

Definitions

  • the present invention relates to a wire saw with a cutting wire-equipped wire field in which at least one nozzle radiates the cutting chips from the wire field at least over the width of the cut surface of the wire field with liquid.
  • the present invention relates to a wire saw with a cutting wire-equipped wire field in which at least one nozzle radiates the cutting chips from the wire field at least over the width of the cut surface of the wire field with liquid.
  • Invention directed to appropriate cutting methods and uses with this wire saw.
  • the semiconductor and photovoltaic industries use crystalline silicon for the manufacture of computer chips and photovoltaic systems.
  • the by the manufacturer as a single crystal (ingot) or polycrystalline block (brick) with weights of up to several hundred kilograms provided raw silicon undergoes a series of cutting processes that convert the crude crystals into a parallelepiped, which then cut into thin to gauzy slices (wafers) which are cleaned, post-treated and then finally processed for the respective application.
  • a wire saw typically consists of two wire guide rollers with high-precision and fine grooves which guide a thin steel or bladed steel wire.
  • the wire tension between the guide rollers creates a wire field that turns into one or alternating by quickly turning the guide rollers
  • wire saws a distinction is made between wire-coated wire saws and separating liquid (eg DS 261, 264, 265 and 266 from Meyer Burger AG, Thun, Switzerland), which mostly consist of the cutting agent silicon carbide or diamond powder and viscous, aqueous or organic carrier liquids such as glycol. as well as wire saws with cutting-wire-studded wire, usually a diamond-studded wire (eg DS 265 and DS 264 equipped with diamond wire, CR 200 from Meyer Burger AG, Thun, Switzerland).
  • slurry wire sawing separation is effected by the lapping (chipping) action of the cutting means entrained in the suspension by the wire and by wire sawing through the cutting means fixedly connected to the wire.
  • compositions of these liquids vary depending on the task and need from thin to highly viscous or thixotropic, aqueous, organic or mixed, and often contain conventional additives such as lubricants or anti-caking agents, stabilizers, preservatives, so-called EP additives (extreme pressure additives ), Viscosity or thixotropy-promoting substances, emulsifiers, solubilizers, etc.
  • conventional additives such as lubricants or anti-caking agents, stabilizers, preservatives, so-called EP additives (extreme pressure additives ), Viscosity or thixotropy-promoting substances, emulsifiers, solubilizers, etc.
  • the surface finish of thin-sliced wafers using wire saws is critical to the quality of the resulting products for the semiconductor and photovoltaic industries.
  • Post-processing of surface irregularities is cost-intensive and, due to the small layer thickness and brittleness of the wafers, is only possible to a limited extent.
  • the cutting chips fed from the parallel cutting grooves and adhering to the wires by means of the cooling liquid cause temporary and irregular offsetting of individual or fewer wires and thus irregularities of the cutting surface as the cutting chips enter the grooves of the wire guide rollers .
  • the wire band is sprayed with the cooling liquid to apply the liquid and cutting chip residues from the wire before reaching the wire guide rollers
  • these methods should lead to improved products, in particular silicon wafers, whose surfaces are advantageously suitable for use in semiconductor products such as computer chips and photovoltaic systems.
  • This object is achieved in a first aspect by the provision of a wire saw with schneidstoffbegeem wire field, in which at least one nozzle radiates the cutting chips from the wire field at least over the width of the cut surface of the wire field with liquid.
  • the at least one nozzle can be arranged above and / or below the wire field.
  • it is arranged above the wire field.
  • the at least one nozzle is arranged outside, laterally of at least one of, preferably two, wire guide rollers.
  • the at least one nozzle thus radiates from the outside left and / or right on the wire-guiding round surface of the wire guide roller (s). This lateral, outer-side arrangement avoids that the dirt and chips adhering to the nozzle and also emitted by the nozzle fall onto the wire field.
  • the at least one nozzle is arranged between the upper and the lower wire field and the wire guide rollers and preferably radiates the lower wire field towards the middle of the wire field.
  • the vertical beam angle is preferably 10 to 70 degrees, and more preferably about 45 or about 60 degrees toward the lower wire field
  • the horizontal beam angle to the running direction of the wire field is preferably 0 degrees (ie parallel to the wire field)
  • the pressure of the liquid on the wire field is preferably 0.5 to 10 bar, more preferably 1 to 5 bar, and most preferably about 1, 5 or about 2 bar.
  • the at least one nozzle can be arranged along the entire wire field between the wire guide rollers and the cut material, as long as the at least one nozzle is positioned so that at operating pressure, the cutting chips from the wire field at least over the width of
  • Cutting surface of the wire field radiates with liquid.
  • the at least one nozzle is usually arranged in close spatial proximity to the radiating surface on the wire field in order to avoid pressure losses.
  • the at least one nozzle is arranged so that it radiates the cutting chips from the wire field in the region of the central axis to the inner edge of the wire guide roller.
  • the cutting chips need not be radiated from the entire area of the wire field, but only at least over the width of the cut surface of the wire field with liquid, so that the
  • the above-mentioned transition region of the wire field to the wire guide roller begins where the wire field is for the first time directly above the inner edge of the guide roller, and ends where the wire field comes into contact with the guide roller, usually above the longitudinal axis of the roller. Accordingly, the width of this area is the radius of the guide roller.
  • Said transition region has been found to be particularly advantageous for blasting the material to be cut with nozzles, since the pressure of the nozzles has no appreciable influence on the alignment of the wire field in the material to be cut due to the distance to the material to be cut and also stabilizes the wire field already by the grooves of the guide rollers is that a significant Abstrahltig can be exercised, which optimally cleans the wire field, but can not lead to misalignment of the wires.
  • the at least one nozzle is arranged at least on the side leading away from the item to be cut, since there the new cutting chips are obtained.
  • at least one, for example, additional nozzle on the cutting material facing side be advantageous to eliminate residues of cutting material or in the case of alternating directions of the wire field.
  • the inventive wire saw also relates to those in which at least two nozzles radiate the cutting chips from the wire field, preferably in the region of the central axis to the inner edge of the preferably two wire guide rollers.
  • the at least one nozzle of the wire saw according to the invention radiates the cutting chips from the wire field at least over the width of the cut surface of the wire field with liquid, i. before contacting the cutting chips with the wire guide rollers.
  • the vertical angle of the nozzle (s) to the wire array is 90 ° (vertical) or less (pointed), preferably 0 to 70 or 10 to 60 °, more preferably 15 to 55 ° or 20 to 50 ° preferably about 60 ° or about 45 °.
  • the vertical beam angle is the angle at which the fluid hits the wire field. An acute angle is due to its directional sliding effect on the
  • the liquid can be irradiated parallel to the running direction of the wire field or laterally offset from the running direction of the wire field in order to deflect the cutting chips in a single direction sideways from the wire field.
  • the horizontal angle of the at least one nozzle to the running direction of the wire field is 0 to 60 °, preferably 0 to 45 °, more preferably 0 to 30 °, most preferably 0 to 15 °. The sharper the angle, the lower the sideways deflecting forces on the wire field.
  • the at least one nozzle can be aligned in the direction of material to be cut (inwards) or in the direction of the wire guide roller (outwards).
  • the at least one nozzle is aligned in the direction of the material to be cut, and the liquid therefrom radiates the cutting chips in the direction of the material to be cut.
  • the at least one nozzle can be fixed at a distance to the wire field, but also in the vertical or horizontal angle of attack or be variably adjustable and optionally also discontinuously or continuously varied in position.
  • the at least one nozzle may vary continuously at a vertical angle between 90 and 30 degrees, and / or periodically move the liquid in a direction sideways from the wire field. radiate.
  • the distance of the at least one nozzle to the wire field and the vertical and horizontal alignment to the wire field depends, inter alia, on the nozzle geometry, the fluid pressure, the cutting chips transported by the wire field in quantity and adhesion force on the wire field, etc. The expert will optimize these depending on the specification of the cutting process.
  • the at least one nozzle can be adjusted manually or automatically so that it can be used for pre-cleaning the cut wafer in the wire saw apparatus.
  • the wire saw according to the invention is such that the vertical beam angle and / or the horizontal beam angle of the at least one nozzle are variable and preferably varied during cutting, more preferably are varied periodically or continuously during cutting.
  • the vertical beam angle is about 45 ° or about 60 ° to the wire field and / or the horizontal beam angle is about 0 ° of the at least one nozzle.
  • the at least one nozzle is preferably in the direction of food to be cut, i. aligned inward to the wire center.
  • the wire saw according to the invention also differs from those of the prior art in that at least one nozzle applies a liquid under pressure to the wire field at least across the width of the cut surface of the wire field.
  • the fluid pressure on the wire field should be sufficient to radiate the unwanted cutting chips from the wire field prior to contact with the wire guide rollers.
  • the necessary fluid pressure therefore clearly depends on the distance nozzle-wire field and the vertical and horizontal beam angle.
  • blasting in the sense of the invention means that the fluid pressure strikes the cutting chips directed from the wire field in the sense of a liquid puller.
  • the pressure which the liquid exerts on the wire field in the direct contact area is in the range between 0.5 and 10 bar, preferably 1 and 10, more preferably 1 and 5, even more preferably 2 and 5 bar , most preferably 2 and 4 bar.
  • the pressure here is the average pressure in the direct contact area (impact surface).
  • the cutting means fixed to the wire are preferably those which are selected from the group consisting of silicon carbide, diamond and boron carbide
  • Silicon carbide and diamond most preferably diamond.
  • liquid nozzles in the sense of the invention are less suitable because they would otherwise remove the cutting means from wire.
  • the liquid used in the at least one nozzle is preferably also suitable for cooling, lubrication and rinsing of the material to be cut, in addition to the mechanical removal action of the cutting chips.
  • it is substantially aqueous and preferably comprises additives selected from the group consisting of lubricants or lubricants, viscosity or thixotropy-promoting substances, corrosion inhibitors, stabilizers, preservatives, extreme pressure additives (EP) additives, emulsifiers, solubilizers.
  • width of the cut surface denotes the width of the wire field which is guided through the material to be cut, The liquid from the at least one nozzle should at least free this width of the wire field from cutting chips.
  • the invention relates to a method for cutting hard, preferably brittle solids, preferably metals and semi-metals, preferably selected from the group of monocrystalline and polycrystalline silicon crystals, ceramics, sapphire and germanium, characterized in that the solid by the Wire field performed a wire saw according to the invention, ie respectively.
  • a third aspect of the invention relates to the use of a wire saw according to the invention for cutting hard, preferably brittle solids, preferably metals and semi-metals, preferably selected from the group of monocrystalline and polycrystalline silicon crystals, ceramics, sapphire and germanium, in particular mono- or polycrystalline silicon for the production of silicon wafers.
  • hard, preferably brittle solids, preferably metals and semi-metals preferably selected from the group of monocrystalline and polycrystalline silicon crystals, ceramics, sapphire and germanium, in particular mono- or polycrystalline silicon for the production of silicon wafers.
  • Fig. 1 shows schematically a wire saw (1) with schneidstoffbepatem wire field (2), the two guide rollers (3a, 3b) rotates, in which the cuboid cutting material (4) from above through the wire array (2) is guided.
  • FIGS. 2a to 2c are graphs showing the measurement results of silicon wafers cut in accordance with the wire-fence embodiments with the trickle function or nozzles of FIGS. 3a to 3c in the example.
  • the graphic at the top left shows the average wafer thickness (thickness).
  • the graph at the top right shows the thickness variation within the measured wafer.
  • the graph below left shows the depth of the saw marks within 1 mm.
  • the graphic below shows the saw marks within 5 mm.
  • FIG. 2a shows the measurement results when the wire saw is equipped with nozzle rows on both sides and trickle function (standard nozzles in standard position) according to FIG. 3a.
  • Fig. 2b shows the measurement results when equipped with the wire saw with two-sided nozzle rows with a pressure of 1, 5 bar at a vertical angle of 45 ° to the wire field and a horizontal angle of 0 ° (parallel to the wire field) according to FIG. 3b.
  • Fig. 2c shows the measurement results when equipping the wire saw with double-sided nozzle rows with a pressure of 1, 5 bar directly in front of the wafer drawer on the wire guide rollers at a vertical angle of 60 ° to the wire field and a horizontal angle of 0 ° (parallel to the wire field) according to Fig. 3c.
  • Figs. 3a to 3c show wire saw arrangements with which the results shown in FIGS. 2a to 2c have been worked out.
  • Fig. 3a shows the photo of a conventional wire saw with conventional trickle on both sides, in particular the hexagonal Schneidgut (4), a polycrystalline ingot, which depends on the slowly lowering Schneidgut amount (10), and the two trickle tubes, from which cooling and rinsing over Guiding plates on the wire field (2) is running.
  • Fig. 3b shows the photograph of the conventional wire saw of Figure 1 without trickle arrangement, but with double-sided nozzle assembly (5) with a vertical angle of about 45 degrees to the wire field (ie horizontal), a horizontal angle of 0 degrees (parallel to the wire field) with alignment in Direction to be cut (4) on the material to be cut (10).
  • Figure 3c shows the photograph of the conventional wire saw of Figure 1 without a trickle arrangement, but with two nozzle arrays (5) having a vertical beam angle of about 60 degrees to the lower wire field (ie horizontal), a horizontal angle of 0 degrees (parallel to the wire field) with alignment towards the lower wire center (2), these nozzle arrangements (5) are located directly in front of or on the wafer drawer, which delimits the wire guide rollers from the cutting space.
  • the material to be cut (4) is lowered during operation from above through the upper wire field and cut so.
  • Polycrystalline ingots were first cutted by means of a band saw of the type BS806 or BS805 (Meyer-Burger AG), the melting caps were removed, then kneaded and then "cutted” again by means of an internal hole saw type TS207 (Meyer-Burger AG) only water was used in each of these processes.
  • the resulting cuboid was then divided into twelve approximately equal sized bricks in the format 156 x 156 mm by means of the band saw mentioned above. Before further processing, the side surfaces were smoothed as usual.
  • the coolant used was city water with 5% of customary additives (TP714, Meyer-Burger, Steffisburg, Switzerland) with a pH of 7.2. It was cut in pendulum mode, ie about 1000 m forward and 900 m backwards, so that continuously 100 m of new wire were inserted.
  • the coolant passed through various filter stages, 20 pm conveyor belt, 10 pm bag filter and then 5 pm filter cartridges. A cut took about three hours, depending on the recipe, regardless of the length of the bricks.
  • the finished cut wafers were then removed from the sawing device, immersed in clean coolant of the same concentration (5% by volume, pH value as before) and transferred to the pre-cleaning.
  • the adhesive was removed as usual with acetic acid at 40 ° C and the wafers then passed through a conventional cleaning system (Schmid Wafer cleaning plant, Gebr. Schmid GmbH + Co., Freudenstadt, Germany). Thereafter, the clean and dry wafers were inspected by means of a conventional device (measuring system HE-WIS-04 Henneke Systems GmbH, Zülpich, Germany) and examined for geometric quality features.
  • FIGS. 2a to 2c The results of the wafers cut with these wire saws with trickle and nozzle arrangements are graphically summarized in FIGS. 2a to 2c.
  • substantially less water is applied to the wire field with the spray nozzles of the arrangements 3b and 3c, which leads to a reduction in the turbulence at the two block ends.
  • the wire field is also quieter which results in a lower dispersion of the values of the average thickness variation, the saw marks within 1 mm and the saw marks within 5 mm.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne une scie à fil (1) comprenant une zone de fil (2) garnie de moyens de coupe, caractérisée par au moins une buse (5) qui évacue à l'aide d'un liquide les copeaux de la zone de fil (2) au moins sur la largeur de la surface de coupe de la zone de fil (2). L'invention concerne également des procédés de coupe correspondants et des utilisations correspondantes de cette scie à fil (1).
PCT/EP2010/006541 2009-10-28 2010-10-27 Scie à fil comprenant une zone de fil et des buses de nettoyage WO2011050945A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09013561.7 2009-10-28
EP09013561 2009-10-28

Publications (1)

Publication Number Publication Date
WO2011050945A1 true WO2011050945A1 (fr) 2011-05-05

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PCT/EP2010/006541 WO2011050945A1 (fr) 2009-10-28 2010-10-27 Scie à fil comprenant une zone de fil et des buses de nettoyage

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2415070A2 (fr) * 2009-04-01 2012-02-08 Cabot Microelectronics Corporation Appareil du type scie à fil autonettoyant et procédé
CN103586988A (zh) * 2013-11-25 2014-02-19 王金生 一种线锯切割机
CN104552627A (zh) * 2013-10-25 2015-04-29 应用材料瑞士有限责任公司 包括用于产生流体射流的喷嘴的半导体丝锯
FR3032899A1 (fr) * 2015-02-23 2016-08-26 Commissariat Energie Atomique Dispositif de decoupe par fil comportant un systeme de lubrification par aspersion du fil et un systeme de nettoyage par aspersion du fil
CN113601741A (zh) * 2021-08-09 2021-11-05 西安奕斯伟硅片技术有限公司 为切割硅棒的多条切割线供应沙浆的装置及硅棒切割设备
DE102016224640B4 (de) 2016-12-09 2024-03-28 Siltronic Ag Verfahren zum Zersägen eines Werkstückes mit einer Drahtsäge

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1170456A (ja) * 1997-08-29 1999-03-16 Tokyo Seimitsu Co Ltd 固定砥粒ワイヤソーのワイヤクリーニング装置
JPH11221748A (ja) * 1998-02-06 1999-08-17 Toray Eng Co Ltd ワイヤソー
DE10157433A1 (de) * 2000-11-24 2002-05-29 Sumitomo Spec Metals Verfahren zum Schneiden einer Seltenerdmetall-Legierung, Verfahren zur Herstellung eines Seltenerdmetall-Magneten und Drahtsäge-Vorrichtung
JP2007021676A (ja) * 2005-07-19 2007-02-01 Asahi Diamond Industrial Co Ltd ノズル装置、ワイヤ加工装置、及びワイヤ加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1170456A (ja) * 1997-08-29 1999-03-16 Tokyo Seimitsu Co Ltd 固定砥粒ワイヤソーのワイヤクリーニング装置
JPH11221748A (ja) * 1998-02-06 1999-08-17 Toray Eng Co Ltd ワイヤソー
DE10157433A1 (de) * 2000-11-24 2002-05-29 Sumitomo Spec Metals Verfahren zum Schneiden einer Seltenerdmetall-Legierung, Verfahren zur Herstellung eines Seltenerdmetall-Magneten und Drahtsäge-Vorrichtung
JP2007021676A (ja) * 2005-07-19 2007-02-01 Asahi Diamond Industrial Co Ltd ノズル装置、ワイヤ加工装置、及びワイヤ加工方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2415070A2 (fr) * 2009-04-01 2012-02-08 Cabot Microelectronics Corporation Appareil du type scie à fil autonettoyant et procédé
EP2415070A4 (fr) * 2009-04-01 2012-09-26 Cabot Microelectronics Corp Appareil du type scie à fil autonettoyant et procédé
CN104552627A (zh) * 2013-10-25 2015-04-29 应用材料瑞士有限责任公司 包括用于产生流体射流的喷嘴的半导体丝锯
CN103586988A (zh) * 2013-11-25 2014-02-19 王金生 一种线锯切割机
FR3032899A1 (fr) * 2015-02-23 2016-08-26 Commissariat Energie Atomique Dispositif de decoupe par fil comportant un systeme de lubrification par aspersion du fil et un systeme de nettoyage par aspersion du fil
WO2016135102A1 (fr) * 2015-02-23 2016-09-01 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif de découpe par fil comportant un système de lubrification par aspersion du fil et un système de nettoyage par aspersion du fil
DE102016224640B4 (de) 2016-12-09 2024-03-28 Siltronic Ag Verfahren zum Zersägen eines Werkstückes mit einer Drahtsäge
CN113601741A (zh) * 2021-08-09 2021-11-05 西安奕斯伟硅片技术有限公司 为切割硅棒的多条切割线供应沙浆的装置及硅棒切割设备
CN113601741B (zh) * 2021-08-09 2023-06-23 西安奕斯伟硅片技术有限公司 为切割硅棒的多条切割线供应砂浆的装置及硅棒切割设备

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