WO2011043223A1 - アクチュエータ素子およびシート状アクチュエータ - Google Patents
アクチュエータ素子およびシート状アクチュエータ Download PDFInfo
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- WO2011043223A1 WO2011043223A1 PCT/JP2010/066802 JP2010066802W WO2011043223A1 WO 2011043223 A1 WO2011043223 A1 WO 2011043223A1 JP 2010066802 W JP2010066802 W JP 2010066802W WO 2011043223 A1 WO2011043223 A1 WO 2011043223A1
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- WIPO (PCT)
- Prior art keywords
- actuator
- displacement
- sheet
- substrate
- wafer
- Prior art date
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 104
- 239000002608 ionic liquid Substances 0.000 claims abstract description 14
- 229920001971 elastomer Polymers 0.000 claims abstract description 10
- 239000000806 elastomer Substances 0.000 claims abstract description 10
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000523 sample Substances 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 106
- -1 polydimethylsiloxane Polymers 0.000 description 21
- 238000005530 etching Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 10
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 239000013013 elastic material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUAXVBUVQVRIIQ-UHFFFAOYSA-N 1-butyl-2,3-dimethylimidazol-3-ium Chemical compound CCCCN1C=C[N+](C)=C1C XUAXVBUVQVRIIQ-UHFFFAOYSA-N 0.000 description 3
- IQQRAVYLUAZUGX-UHFFFAOYSA-N 1-butyl-3-methylimidazolium Chemical compound CCCCN1C=C[N+](C)=C1 IQQRAVYLUAZUGX-UHFFFAOYSA-N 0.000 description 3
- NJMWOUFKYKNWDW-UHFFFAOYSA-N 1-ethyl-3-methylimidazolium Chemical compound CCN1C=C[N+](C)=C1 NJMWOUFKYKNWDW-UHFFFAOYSA-N 0.000 description 3
- OXFBEEDAZHXDHB-UHFFFAOYSA-M 3-methyl-1-octylimidazolium chloride Chemical compound [Cl-].CCCCCCCCN1C=C[N+](C)=C1 OXFBEEDAZHXDHB-UHFFFAOYSA-M 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IIJSFQFJZAEKHB-UHFFFAOYSA-M 1,3-dimethylimidazol-1-ium;chloride Chemical compound [Cl-].CN1C=C[N+](C)=C1 IIJSFQFJZAEKHB-UHFFFAOYSA-M 0.000 description 2
- GSGLHYXFTXGIAQ-UHFFFAOYSA-M 1,3-dimethylimidazol-1-ium;dimethyl phosphate Chemical compound COP([O-])(=O)OC.CN1C=C[N+](C)=C1 GSGLHYXFTXGIAQ-UHFFFAOYSA-M 0.000 description 2
- WYABBCZMFVULEF-UHFFFAOYSA-M 1-butyl-1-methylpiperidin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1(C)CCCCC1 WYABBCZMFVULEF-UHFFFAOYSA-M 0.000 description 2
- XREPTGNZZKNFQZ-UHFFFAOYSA-M 1-butyl-3-methylimidazolium iodide Chemical compound [I-].CCCCN1C=C[N+](C)=C1 XREPTGNZZKNFQZ-UHFFFAOYSA-M 0.000 description 2
- UWVZAZVPOZTKNM-UHFFFAOYSA-M 1-butyl-4-methylpyridin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1=CC=C(C)C=C1 UWVZAZVPOZTKNM-UHFFFAOYSA-M 0.000 description 2
- YTSDTJNDMGOTFN-UHFFFAOYSA-M 1-butyl-4-methylpyridin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1=CC=C(C)C=C1 YTSDTJNDMGOTFN-UHFFFAOYSA-M 0.000 description 2
- KVBQNFMTEUEOCD-UHFFFAOYSA-M 1-butylpyridin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1=CC=CC=C1 KVBQNFMTEUEOCD-UHFFFAOYSA-M 0.000 description 2
- POKOASTYJWUQJG-UHFFFAOYSA-M 1-butylpyridin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1=CC=CC=C1 POKOASTYJWUQJG-UHFFFAOYSA-M 0.000 description 2
- YWHZQHRLNXKZNA-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;2-(2-methoxyethoxy)ethyl sulfate Chemical compound CC[N+]=1C=CN(C)C=1.COCCOCCOS([O-])(=O)=O YWHZQHRLNXKZNA-UHFFFAOYSA-M 0.000 description 2
- GWQYPLXGJIXMMV-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCN1C=C[N+](C)=C1 GWQYPLXGJIXMMV-UHFFFAOYSA-M 0.000 description 2
- VRFOKYHDLYBVAL-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;ethyl sulfate Chemical compound CCOS([O-])(=O)=O.CCN1C=C[N+](C)=C1 VRFOKYHDLYBVAL-UHFFFAOYSA-M 0.000 description 2
- IXLWEDFOKSJYBD-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;methanesulfonate Chemical compound CS([O-])(=O)=O.CC[N+]=1C=CN(C)C=1 IXLWEDFOKSJYBD-UHFFFAOYSA-M 0.000 description 2
- ZPTRYWVRCNOTAS-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;trifluoromethanesulfonate Chemical compound CC[N+]=1C=CN(C)C=1.[O-]S(=O)(=O)C(F)(F)F ZPTRYWVRCNOTAS-UHFFFAOYSA-M 0.000 description 2
- BMQZYMYBQZGEEY-UHFFFAOYSA-M 1-ethyl-3-methylimidazolium chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1 BMQZYMYBQZGEEY-UHFFFAOYSA-M 0.000 description 2
- ZTLWMUBOQHZKNS-UHFFFAOYSA-M 1-ethyl-3-methylpyridin-1-ium;ethyl sulfate Chemical compound CCOS([O-])(=O)=O.CC[N+]1=CC=CC(C)=C1 ZTLWMUBOQHZKNS-UHFFFAOYSA-M 0.000 description 2
- ABFDKXBSQCTIKH-UHFFFAOYSA-M 1-ethylpyridin-1-ium;bromide Chemical compound [Br-].CC[N+]1=CC=CC=C1 ABFDKXBSQCTIKH-UHFFFAOYSA-M 0.000 description 2
- AMFMJCAPWCXUEI-UHFFFAOYSA-M 1-ethylpyridin-1-ium;chloride Chemical compound [Cl-].CC[N+]1=CC=CC=C1 AMFMJCAPWCXUEI-UHFFFAOYSA-M 0.000 description 2
- JJYWDMDTOCKULH-UHFFFAOYSA-N 1-hexadecoxyhexadecane;sulfuric acid Chemical compound OS(O)(=O)=O.CCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCC JJYWDMDTOCKULH-UHFFFAOYSA-N 0.000 description 2
- NKRASMXHSQKLHA-UHFFFAOYSA-M 1-hexyl-3-methylimidazolium chloride Chemical compound [Cl-].CCCCCCN1C=C[N+](C)=C1 NKRASMXHSQKLHA-UHFFFAOYSA-M 0.000 description 2
- IVCMUVGRRDWTDK-UHFFFAOYSA-M 1-methyl-3-propylimidazol-1-ium;iodide Chemical compound [I-].CCCN1C=C[N+](C)=C1 IVCMUVGRRDWTDK-UHFFFAOYSA-M 0.000 description 2
- 102000004882 Lipase Human genes 0.000 description 2
- 108090001060 Lipase Proteins 0.000 description 2
- 239000004367 Lipase Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- HSLXOARVFIWOQF-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-butyl-1-methylpyrrolidin-1-ium Chemical compound CCCC[N+]1(C)CCCC1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F HSLXOARVFIWOQF-UHFFFAOYSA-N 0.000 description 2
- XDJYSDBSJWNTQT-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-ethyl-2,3-dimethylimidazol-3-ium Chemical compound CC[N+]=1C=CN(C)C=1C.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F XDJYSDBSJWNTQT-UHFFFAOYSA-N 0.000 description 2
- BLODSRKENWXTLO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;triethylsulfanium Chemical compound CC[S+](CC)CC.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F BLODSRKENWXTLO-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 235000019421 lipase Nutrition 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- RVKZDIDATLDTNR-UHFFFAOYSA-N sulfanylideneeuropium Chemical compound [Eu]=S RVKZDIDATLDTNR-UHFFFAOYSA-N 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- LAGQNGWYNLUQRI-UHFFFAOYSA-N trioctylmethylammonium bis(trifluoromethylsulfonyl)imide Chemical compound FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F.CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC LAGQNGWYNLUQRI-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- CIWXUAJJMSQGND-UHFFFAOYSA-M (1-ethylpyridin-1-ium-3-yl)methanol;ethyl sulfate Chemical compound CCOS([O-])(=O)=O.CC[N+]1=CC=CC(CO)=C1 CIWXUAJJMSQGND-UHFFFAOYSA-M 0.000 description 1
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 1
- LCZRPQGSMFXSTC-UHFFFAOYSA-M 1-butyl-1-methylpyrrolidin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1(C)CCCC1 LCZRPQGSMFXSTC-UHFFFAOYSA-M 0.000 description 1
- BOOXKGZZTBKJFE-UHFFFAOYSA-M 1-butyl-1-methylpyrrolidin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1(C)CCCC1 BOOXKGZZTBKJFE-UHFFFAOYSA-M 0.000 description 1
- UGHBKTSSBSCAMR-UHFFFAOYSA-N 1-butyl-2,3-dimethyl-1,2-dihydroimidazol-1-ium bromide Chemical group [Br-].CCCC[NH+]1C=CN(C)C1C UGHBKTSSBSCAMR-UHFFFAOYSA-N 0.000 description 1
- KYCQOKLOSUBEJK-UHFFFAOYSA-M 1-butyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCCCN1C=C[N+](C)=C1 KYCQOKLOSUBEJK-UHFFFAOYSA-M 0.000 description 1
- FHDQNOXQSTVAIC-UHFFFAOYSA-M 1-butyl-3-methylimidazol-3-ium;chloride Chemical compound [Cl-].CCCCN1C=C[N+](C)=C1 FHDQNOXQSTVAIC-UHFFFAOYSA-M 0.000 description 1
- FRZPYEHDSAQGAS-UHFFFAOYSA-M 1-butyl-3-methylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCC[N+]=1C=CN(C)C=1 FRZPYEHDSAQGAS-UHFFFAOYSA-M 0.000 description 1
- GNPWBXOERPGDFI-UHFFFAOYSA-M 1-butyl-3-methylpyridin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1=CC=CC(C)=C1 GNPWBXOERPGDFI-UHFFFAOYSA-M 0.000 description 1
- HZKDSQCZNUUQIF-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;hydrogen sulfate Chemical compound OS([O-])(=O)=O.CCN1C=C[N+](C)=C1 HZKDSQCZNUUQIF-UHFFFAOYSA-M 0.000 description 1
- JRZXASDTNSFJBR-UHFFFAOYSA-L 1-ethyl-3-methylimidazol-3-ium;sulfate Chemical compound [O-]S([O-])(=O)=O.CCN1C=C[N+](C)=C1.CCN1C=C[N+](C)=C1 JRZXASDTNSFJBR-UHFFFAOYSA-L 0.000 description 1
- BGSUDDILQRFOKZ-UHFFFAOYSA-M 1-hexyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCCCCCN1C=C[N+](C)=C1 BGSUDDILQRFOKZ-UHFFFAOYSA-M 0.000 description 1
- URVSXZLUUCVGQM-UHFFFAOYSA-M 1-methyl-3-octylimidazol-1-ium;bromide Chemical compound [Br-].CCCCCCCCN1C=C[N+](C)=C1 URVSXZLUUCVGQM-UHFFFAOYSA-M 0.000 description 1
- XXZFCJVFXKCILB-UHFFFAOYSA-N 1-methylpyrrolidine;hydrobromide Chemical compound [Br-].C[NH+]1CCCC1 XXZFCJVFXKCILB-UHFFFAOYSA-N 0.000 description 1
- TYOVSFHFYHSADG-UHFFFAOYSA-N 4,8-dichloro-2-methylquinoline Chemical compound C1=CC=C(Cl)C2=NC(C)=CC(Cl)=C21 TYOVSFHFYHSADG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical class C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical class C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RHZVXIUHDXIENO-UHFFFAOYSA-L [I-].C(C)[N+]1=CN(C=C1)C.[I-].C(C)[N+]1=CN(C=C1)C Chemical compound [I-].C(C)[N+]1=CN(C=C1)C.[I-].C(C)[N+]1=CN(C=C1)C RHZVXIUHDXIENO-UHFFFAOYSA-L 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UCCKRVYTJPMHRO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-butyl-2,3-dimethylimidazol-3-ium Chemical compound CCCC[N+]=1C=CN(C)C=1C.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F UCCKRVYTJPMHRO-UHFFFAOYSA-N 0.000 description 1
- INDFXCHYORWHLQ-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-butyl-3-methylimidazol-3-ium Chemical compound CCCCN1C=C[N+](C)=C1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F INDFXCHYORWHLQ-UHFFFAOYSA-N 0.000 description 1
- LRESCJAINPKJTO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-ethyl-3-methylimidazol-3-ium Chemical compound CCN1C=C[N+](C)=C1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F LRESCJAINPKJTO-UHFFFAOYSA-N 0.000 description 1
- UFYPPIXBMHRHIA-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;cyclohexyl(trimethyl)azanium Chemical compound C[N+](C)(C)C1CCCCC1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F UFYPPIXBMHRHIA-UHFFFAOYSA-N 0.000 description 1
- QFLRMCUVYQFPCO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;tributyl(2-methoxyethyl)phosphanium Chemical compound FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F.CCCC[P+](CCCC)(CCCC)CCOC QFLRMCUVYQFPCO-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- MKHFCTXNDRMIDR-UHFFFAOYSA-N cyanoiminomethylideneazanide;1-ethyl-3-methylimidazol-3-ium Chemical compound [N-]=C=NC#N.CCN1C=C[N+](C)=C1 MKHFCTXNDRMIDR-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- ISLMUNSNHGLMCV-UHFFFAOYSA-N tributyl(2-methoxyethyl)phosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCOC ISLMUNSNHGLMCV-UHFFFAOYSA-N 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
- F03G—SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR
- F03G7/00—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for
- F03G7/005—Electro-chemical actuators; Actuators having a material for absorbing or desorbing gas, e.g. a metal hydride; Actuators using the difference in osmotic pressure between fluids; Actuators with elements stretchable when contacted with liquid rich in ions, with UV light, with a salt solution
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
Definitions
- the present invention relates to an actuator element and a sheet-like actuator using the actuator element.
- Semiconductor wafers are becoming larger in diameter from the viewpoint of improving productivity, and those with a diameter of 450 mm are being studied.
- semiconductor elements are increasingly required to be miniaturized.
- the semiconductor wafer In order to cope with miniaturization, the semiconductor wafer needs to be uniformly processed.
- deformation such as warpage is likely to occur, and it is difficult to obtain a horizontal plane.
- a semiconductor device manufacturing apparatus requires a small actuator for adjusting the height of members and adjusting pressure.
- actuators using organic materials have also been proposed (see Japanese Patent Application Laid-Open Nos. 2008-228542, 2008-252958, and 2009-33944). Not applicable.
- a device comprising a mixture of an elastomer containing silicone and an ionic liquid, which is displaced when a voltage is applied, and an electrode for applying a voltage to the displacement device
- an actuator element comprising a main body and a displacement transmitting portion that is displaced in an out-of-plane direction by the displacement of the displacement element.
- a plurality of displacement elements that are made of a mixture of an elastomer containing silicone and an ionic liquid, and that are displaced when a voltage is applied, and electrodes for applying a voltage to the displacement element.
- FIG. 10 is a plan view of the vicinity of the upper surface of the connecting member of the probe device of FIG. 9. 10 is a graph showing a relationship between a positional displacement S of an electrode pad and a load F generated as a contact load between the contact body and the electrode pad in the probe device of FIG. 9. It is sectional drawing which shows the mounting base of the plasma etching apparatus using the sheet-like actuator of this invention as a gap adjustment sheet
- FIG. 1 It is sectional drawing which shows the mounting base of the plasma etching apparatus using the sheet-like actuator of this invention as a shape correction sheet
- FIG. 1 is a schematic sectional view showing an actuator element according to the first embodiment of the present invention.
- the actuator element 10 is provided on both surfaces of a plate-like displacement element 11 made of a mixture of an elastomer containing silicone and an ionic liquid, which is an electrically driven polymer, and the displacement element 11.
- An element main body 14 composed of electrodes 12 and 13 for supplying power to the displacement element 11 and the displacement element 11 are provided so as to cover the displacement element 11, and is displaced in the out-of-plane direction (direction perpendicular to the surface) by the displacement of the displacement element 11.
- a displacement transmission portion 15 is provided so as to cover the displacement element 11, and is displaced in the out-of-plane direction (direction perpendicular to the surface) by the displacement of the displacement element 11.
- the displacement element 11 has a plate shape in which a principal surface is formed in the depth direction of the paper surface. When no voltage is applied, the displacement element 11 is in a horizontal state as indicated by a two-dot chain line in FIG. When the control voltage is applied, the displacement transmitting portion 15 is displaced in an out-of-plane direction, and upward in the drawing, so that the tip is bent upward in FIG.
- the displacement transmitting portion 15 is made of an elastic material, for example, a resin such as polyimide, and is flat when no voltage is applied to the displacement element 11 and the displacement element 11 is in a horizontal state.
- a resin such as polyimide
- the said polyimide resin is preferable from being hard to generate
- the displacement transmission unit 15 is configured as a part of a container 16 that accommodates the element main body 14, and the container 16 is fixed to a fixing plate 17 made of a soft material such as a metal such as Cu or Al, or a resin.
- One of the pair of electrodes 12 and 13 is a positive electrode and the other is a negative electrode, and a control wiring 18 is connected to them.
- a control wiring 18 a metal such as Cu or Al, or a conductive resin such as PEDOT / PSS is used.
- a predetermined control voltage is applied between the electrodes 12 and 13 via the control wiring 18.
- polydimethylsiloxane produced by cross-linking reaction of DVPDMS ( ⁇ , ⁇ -divinyl-polydimethylsiloxane) and PMHS (polymethylhydrogensiloxane) should be used. Can do.
- imidazolium salts 1, piperidinium salts, pyridinium compounds, pyrrolidinium salts, and the like can be used.
- 1-ethyl-3-methylimidazolium tetrafluoroborate [EMI] [BF4]: 1-Ethyl-3-methylimidazolium Tetrafluoroborate), 1-butyl-3-methylimidazolium tetrafluoroborate ([BMI ] [BF4]: 1-Butyl-3-methylimidazolium Tetrafluoroborate), 1-hexyl-3-methylimidazolium tetrafluoroborate ([HMI] [BF4]: 1-Hexyl-3-methylimidazolium Tetrafluoroborate), 1-ethyl -3-Methylimidazolium 2- (2-methoxyethoxy) -ethyl sulfate ([EMI] [MEES]: 1-Ethyl-3-methyl
- ionic liquids that can be used include cyclohexyltrimethylammonium bis (trifluoromethanesulfonyl) imide (Methyltri-n-octylammonium bis (trifluoromethanesulfonyl) imide) and methyltri-n-octylammonium bis (trifluoromethanesulfonyl) imide.
- an elastomer containing silicone and an ionic liquid are mixed so that the ionic liquid is, for example, 40% by weight to generate a mixed liquid, and the mixed liquid is poured into a mold having a desired shape.
- An example is a method of removing the mold after vacuum degassing, for example, heat treatment at 150 ° C. for 30 minutes.
- the electrodes 12 and 13 are preferably made of a flexible material that can follow the deformation of the element body 11, and can be formed by, for example, gold sputtering.
- gold As materials other than gold, Al, Cu, Pt, carbon nanotubes, conductive polymers such as PEDOT / PSS, silver grease, and the like can be suitably used.
- FIG. 2A shows the state of the displacement element 11 when no voltage is applied to the electrodes 12 and 13.
- the + component and the ⁇ component of the ionic liquid are uniformly dispersed in the elastomer containing silicone.
- FIG. 2B shows the state of the displacement element 11 when a voltage is applied between the electrodes 12 and 13.
- the + component in the ionic liquid is attracted to the electrode 13 as the negative electrode, and the ⁇ component is attracted to the electrode 12 as the positive electrode.
- polarization occurs in the ionic liquid.
- a component bias is formed in the displacement element 11, and displacement is caused by the deformation of the displacement element 11.
- the two displacement elements 11 are used, and the two displacement elements 11 are arranged in series in the length direction of the displacement elements 11, and the ends of the opposite central portions are bent upward, the displacement force is increased. You can also
- the actuator element 10 of the present embodiment since the displacement element 11 is an organic material, deformation due to voltage application is large and a stroke can be increased. Since the actuator element 10 has a simple configuration in which the electrodes 12 and 13 are formed on the displacement element 11, it can be miniaturized. For this reason, it can arrange with high density. Moreover, it can be stably operated even in the air, and there is no limitation of application.
- 3A and 3B are schematic cross-sectional views showing an actuator element according to the second embodiment of the present invention.
- an actuator element 10 ' includes a plate-like displacement element 11' made of a mixture of an elastomer containing silicone and an ionic liquid, which are electrically driven polymers, and a displacement element 11 '.
- An element main body 14 ′ composed of electrodes 12 ′ and 13 ′ for supplying power to a displacement element 11 ′ provided on the upper and lower surfaces and a displacement element 11 ′ are provided so as to cover the displacement element 11 ′.
- a displacement transmitting portion 15 ' that is displaced in a direction (perpendicular to the surface).
- the displacement element 11 ′ has an origami structure that alternately folds along the longitudinal direction, and is folded when no voltage is applied.
- the surface of the displacement transmission unit 15 is indicated by a two-dot chain line in FIG. However, when the control voltage is applied via the electrodes 12 'and 13', the electrode is displaced in one direction, upward in the figure, and the state shown in FIG. Displace in the direction (upward).
- a simplified structure of the displacement element 11 ′ is shown in FIG. 3B.
- the displacement transmission unit 15 ' is made of an elastic material, for example, a resin such as polyimide.
- the displacement unit 11 ' is folded. Is a flat state, but when the displacement element 11 'is displaced by applying a voltage, it is displaced in the out-of-plane direction in FIG.
- the voltage is released and the displacement element 11 'returns to the folded state, it returns to the original flat state.
- the displacement transmitting portion 15 ' is configured as a part of a container 16' that houses the element body 14 '.
- the container 16' is fixed to a fixing plate 17 'made of a soft material such as a metal such as Cu or Al, or a resin. Has been.
- One of the pair of electrodes 12 'and 13' is a positive electrode and the other is a negative electrode, and a control wiring 18 'is connected to them. A predetermined control voltage is applied between the electrodes 12 'and 13' via the control wiring 18 '.
- FIG. 4A shows the state of the displacement element 11 ′ when no voltage is applied to the electrodes 12 ′ and 13 ′, and the displacement element 11 ′ is in a folded state.
- polarization occurs as described in the first embodiment, and a component bias is formed in the displacement element 11 '.
- displacement occurs in one direction (upward in the figure) as shown in FIG.
- the actuator element 10 ′ of the present embodiment has a large deformation due to the application of voltage and a large stroke because the displacement element 11 ′ is an organic material. Moreover, it can be stably operated even in the air, and there is no limitation of application.
- the displacement element 11 ′ is displaced from the folded state to the extended state, it is possible to take a larger stroke than in the first embodiment. Further, since the displacement element 11 ′ is linearly displaced, the footprint can be made smaller than that of the first embodiment, and the size can be further reduced. For this reason, higher-density arrangement is possible than the actuator element of the first embodiment.
- FIG. 5 is a plan view showing a sheet shape according to the third embodiment of the present invention
- FIG. 6 is a sectional view showing a part thereof.
- the sheet-like actuator 20 includes a plurality of element bodies 14 according to the first embodiment arranged in a flat shape at a high density in a flat container 21 made of an elastic material, for example, a resin such as polyimide.
- the lower surface of the element body 14 is attached to the inner surface of the container 21, and the container 21 is fixed to a fixing plate 23 made of a metal such as Al or Cu.
- the upper surface of the container 21 serves as a common displacement transmission unit 25 for the plurality of actuator elements 10.
- the control wiring 18 extends from the electrodes 12 and 13 of each actuator element 10, the control wiring 18 from all the actuator elements 10 extends to the controller 31, and the control power supply 32 is connected to the controller 31.
- the controller 31 receives an operation distribution instruction from a sensor or the like (not shown), and the controller 31 applies a predetermined control voltage to the plurality of actuator elements 10 based on the instruction, and a desired height distribution is transmitted to the common displacement transmission unit 25. Is formed.
- the actuator element 10 since the actuator element 10 has a small and simple structure, it can be arranged at a high density, and the stroke is large. It becomes extremely suitable as a position adjusting sheet or a gap adjusting sheet for a large area substrate such as a semiconductor wafer.
- FIG. 7 is a plan view showing a sheet-like actuator according to the fourth embodiment of the present invention
- FIG. 8 is a sectional view showing a part thereof.
- the sheet-like actuator 20 ′ includes a plurality of element bodies 14 ′ according to the second embodiment arranged in a flat shape at a high density in a flat container 21 ′ made of an elastic material, for example, a resin such as polyimide.
- the lower surface of the element body 14 ' is attached to the inner surface of the container 21', and the container 21 'is fixed to a fixing plate 23 made of a metal such as Al or Cu.
- the upper surface of the container 21 ' serves as a common displacement transmitting portion 25' for the plurality of actuator elements 10 '.
- Control wires 18 'extend from the electrodes 12' and 13 'of each actuator element 10', and control wires 18 'from all actuator elements 10' extend to the controller 31 as in the third embodiment.
- a control power supply 32 is connected to the controller 31.
- the controller 31 receives an operation distribution instruction from a sensor or the like (not shown), and the controller 31 applies a predetermined control voltage to the plurality of actuator elements 10 'based on the instruction, and a desired high voltage is applied to the common displacement transmission unit 25'. A thickness distribution is formed.
- the actuator element 10 ' since the actuator element 10 'has a small and simple structure, the actuator element 10' can be arranged at a high density and has a large stroke. Is extremely suitable as a position adjusting sheet or a gap adjusting sheet for a large area substrate such as a semiconductor wafer.
- FIG. 9 is a cross-sectional view showing an example of a probe device using the actuator element of the first embodiment or the second embodiment as a load adjusting member
- FIG. 10 is a view of the vicinity of the upper surface of the connecting member of the probe device of FIG. It is a top view.
- the probe device 40 is for inspecting electrical characteristics of a semiconductor wafer (hereinafter simply referred to as a wafer), and has a probe card 41 and a mounting table 42 on which a wafer W as an object to be inspected is mounted. is doing.
- the probe card 41 is disposed above the mounting table 42.
- the probe card 41 is formed in a substantially disk shape as a whole.
- the probe card 41 is provided on the upper surface side of the support plate 51 that supports a contact (probe) 90 that contacts the electrode pad U of the wafer W at the time of inspection, and sends a test electrical signal to the contact 90. 52.
- the circuit board 52 is formed in a substantially disk shape and is electrically connected to a tester (not shown).
- An electronic circuit for transmitting an electrical signal for inspection with the contact 90 is mounted inside the circuit board 52.
- An electrical signal for inspection from the tester is transmitted to and received from the contact 90 via the electronic circuit of the circuit board 52.
- a connection terminal 52 a is disposed on the lower surface of the circuit board 52.
- a reinforcing member 53 for reinforcing the circuit board 52 is provided on the upper surface side of the circuit board 52.
- the reinforcing member 53 includes a main body portion 53a arranged in parallel to the upper side of the circuit board 52, and a fixing portion 53b that extends downward from the outer peripheral portion of the main body portion 53a and fixes the outer peripheral portion of the circuit board 52.
- 53b protrudes to the inside of the circuit board 52 and extends to the outside, and the outer peripheral portion of the fixed portion 53b is held by a holder (not shown).
- a connecting member 54 is provided on the upper surface of the circuit board 52 in parallel with the circuit board 52.
- the connecting member 54 has a substantially disk shape smaller in diameter than the circuit board 52 and is provided inside the fixing portion 53 b of the reinforcing member 53.
- the connecting member 54 also has a function of correcting the flatness of the circuit board 52 by contacting the upper surface of the circuit board 52.
- a connecting body 55 for connecting and integrating the support plate 51 and the connecting member 54 is fixed to the lower surface of the outer peripheral portion of the connecting member 54.
- the connecting body 55 extends in the vertical direction, and is provided at a plurality of locations, for example, 4 locations on the outer periphery of the support plate 51.
- the connecting body 55 penetrates the circuit board 52 in the thickness direction, the lower end reaches the outer position of the outer peripheral portion of the support plate 51, and two protrusions formed at the lower part of the connecting body 55.
- the support plate 51 is held by the portion 55a.
- the lower protrusion 55a may be a leaf spring.
- the electrical contact between the support plate 51 and the circuit board 52 can be maintained by pressing the support board 51 against the circuit board 52 while holding the outer periphery of the support board 51 from below.
- a plurality of, for example, three bolts 56 are provided at the center of the upper surface of the connecting member 54.
- the upper end portion of the bolt 56 is engaged with a recess 54 a formed at the center of the upper surface of the connecting member 54.
- the bolt 56 penetrates the circuit board 52 in the thickness direction, and its lower end is fixed to the upper surface of the support plate 51. Therefore, the support plate 51 and the connecting member 54 are connected by the connecting body 55 and the bolt 56.
- the actuator element 10 or 10 'of the present embodiment as a load adjusting member that maintains a constant contact load between the contact 90 and the electrode pad U is provided on the upper surface of the connecting member 54.
- the actuator elements 10 are arranged at equal intervals on the same circumference with the center of the connecting member 54 as the center when viewed in a plan view.
- the upper surface of the actuator element 10 or 10 ′ is in contact with the main body 53 a of the reinforcing member 53.
- the actuator element 10 or 10 ' can generate a constant thrust in a certain direction, and can generate the load constantly regardless of the point of application of the load.
- a load measuring device 63 is provided, whereby the load applied to the actuator element 10 or 10 'is measured.
- the load measuring device 63 is connected to the controller 60.
- the controller 60 is also connected to the control power supply 61 and the actuator 10 or 10 '. Then, the controller 60 controls the control voltage supplied to the actuator 10 or 10 'based on the signal from the load measuring device 63 to keep the thrust of the actuator element 10 or 10' constant regardless of the displacement position (displacement amount). To control. Therefore, even when the contact 90 comes into contact with the electrode pad U during inspection, the contact load can be maintained at a predetermined load.
- the controller 90 controls the voltage supplied from the control power supply 61 to the actuator element 10 or 10 'based on the measurement result of the load measuring device 63, so that the contactor 90 and the electrode pad U have different heights.
- the contact load between the contact 90 and the electrode pad U is controlled to be constant even when contact is made at.
- the number of actuator elements 10 or 10 ' is not limited to three, but is preferably three or more.
- a leaf spring 64 as an elastic member is provided on the outer peripheral portion of the connecting member 54.
- One end of the leaf spring 64 is fixed to the outer peripheral portion of the connecting member 54, and the other end is fixed to the fixing portion 53b of the reinforcing member 53, and a plurality of, for example, three, preferably equidistantly arranged in the circumferential direction. Yes.
- These plate springs 64 fix the horizontal position of the support plate 51.
- the support plate 51 is disposed so as to face the mounting table 42 and to be parallel to the circuit board 52.
- the support plate 51 is formed in a substantially disc shape, and a plurality of connection terminals 51a are provided on the upper surface thereof.
- the connection terminal 51 a is disposed so as to correspond to the connection terminal 52 a of the circuit board 52.
- a plurality of intermediate members 70 are provided for electrical connection therebetween.
- the plurality of intermediate members 70 are uniformly arranged in the upper surface of the support plate 51. Further, each intermediate member 70 is formed so as to expand and contract independently in the vertical direction. Therefore, even when, for example, the contact 90 and the electrode pad U contact at different heights, the intermediate member 70 It acts to make the in-plane distribution of the contact load between the contact 90 and the electrode pad uniform.
- the contact 90 is provided on the lower surface of the support plate 51 at a narrower pitch than the connection terminals 51a on the upper surface.
- the same number of contacts 90 on the lower surface are provided corresponding to the connection terminals 51 a, and the corresponding connection terminals 51 a and the contacts 90 are connected by wiring inside the support plate 51. That is, the support plate 51 functions as a pitch conversion board that converts the pitch of the connection terminals 52 a of the circuit board 52.
- the mounting table 42 is configured to be movable in the horizontal direction and the vertical direction by the XYZ moving mechanism 43.
- the XYZ moving mechanism 43 By driving the XYZ moving mechanism 43 by the driving mechanism 44, the wafer W mounted on the mounting table 42 is tertiary. The original movement allows precise alignment.
- the specifications required for the actuator element 10 or 10 ' are exemplified as follows. Actuator element installation position: outer diameter ⁇ 100 mm, actuator element thickness: 5 mm or less ⁇ 50%, driving force: 20 kgf / cm 2 for each point, operating temperature: room temperature ⁇ 20 ° C., operating speed: operate in the order of sec to min thing. These specifications can be sufficiently satisfied with the actuator elements of the first and second embodiments.
- FIG. 11 is a graph showing the relationship between the positional displacement S of the electrode pad U and the load F generated as a contact load between the contact 90 and the electrode pad U.
- the generated load F1 in FIG. 11 is the sum of the weight of movable members such as the contact 90, the support plate 51, the connecting member 54, and the connecting body 55, and the initial load of the intermediate member 70, for example.
- the mounting table 42 rises and each electrode pad U of the wafer W comes into contact with the contact 90.
- the relationship between the positional displacement S of the electrode pad U and the generated load F at the moment of contact is a point A in FIG.
- the contact 90 When the electrode pad U is further raised, the contact 90 is compressed in the vertical direction by a force acting from below to above.
- the generated load F is absorbed by the compression of the contact 90 until the position displacement of the electrode pad U reaches S 1 , that is, until the predetermined generated load F 1 is reached. Therefore, in this case, the support plate 51 does not rise even when the electrode pad U rises. Further, the relationship between the positional displacement S of the electrode pad U and the generated load F during this period is between points AB shown in FIG.
- the generated load F is transmitted to the intermediate member 70 through the support plate 51, and is transmitted to the actuator element 10 or 10 ′ through the support plate 51, the connecting body 55, and the connecting member 54. At this time, the support plate 51, the connecting body 55, and the connecting member 54 are raised. At this time, the controller 60 controls the voltage supplied from the control power source 61 to the actuator element 10 or 10 'based on the measurement result of the load measuring device 63, whereby the contact load between the contact 90 and the electrode pad U is reduced. Since it acts so as to be constant, the generated load F can be maintained at F 1 while the positional displacement S of the electrode pad U is displaced from S 1 to S 2 .
- an electrical signal for inspection is sequentially passed from the circuit board 52 through the intermediate member 70, the connection terminal 51a of the support plate 51, and the contact 90, and each of the signals on the wafer W.
- the electrical characteristics of the circuit on the wafer W are inspected by being sent to the electrode pad U.
- the plurality of contacts and the electrode pads contact at different heights, and the distribution in the contact load plane May not be uniform, resulting in poor contact. If the movement of the support plate in the horizontal direction is not restricted, the contact may not properly contact the electrode pad, resulting in poor contact.
- the actuator element the in-plane distribution of the contact load can be uniformly controlled and the contact load can be controlled to be constant, so that contact failure can be eliminated.
- the contact load is not strictly constant. As the positional displacement of the electrode pad increases, it tends to increase (BC ′ in FIG. 11).
- the actuator element 10 or 10 ' the contact load can be made constant as shown in FIG.
- a mounting table on which a wafer functioning as a lower electrode is placed and an upper electrode facing the mounting table are arranged in a chamber, and high frequency power is applied between the upper electrode and the lower electrode.
- a high frequency electric field is formed on the wafer, and the wafer mounted on the mounting table is etched by plasma of a processing gas formed by the high frequency electric field.
- FIG. 12 is a sectional view showing a mounting table of a plasma etching apparatus using the sheet-like actuator of the present invention as a gap adjusting sheet for a focus ring.
- the mounting table 140 includes a mounting table main body 142 that is provided at the bottom of the chamber via an insulating plate and has a stepped columnar shape having a small-diameter upper step 142a and a large-diameter lower step 142b.
- An electrostatic chuck 144 that attracts the wafer W by electrostatic force such as Coulomb force is provided on the upper surface of the small-diameter upper stage portion 142a.
- an annular focus ring 146 for improving etching uniformity is provided so that the surface thereof is the same height as the wafer surface.
- the focus ring 146 is made of silicon when the etching target is silicon, and is made of silicon oxide when the etching target is an oxide film.
- An annular sheet-like actuator 148 having the same basic structure as that of the third embodiment or the fourth embodiment is provided between the focus ring 146 and the surface of the lower step portion 142b.
- the sheet-like actuator 148 functions as a gap adjustment sheet and is divided into four parts, for example, as shown in FIG. You may make it perform drive control collectively.
- a refrigerant chamber 150 is provided inside the mounting table main body 142.
- a coolant having a predetermined temperature for example, cooling water, is circulated and supplied to the coolant chamber 150 from a chiller unit (not shown) provided outside, and the processing temperature of the wafer W can be controlled by the temperature of the coolant.
- a heat transfer gas from a heat transfer gas supply mechanism (not shown), for example, He gas is supplied between the upper surface of the electrostatic chuck 144 and the back surface of the semiconductor wafer W via the gas supply line 152.
- the surface height of the focus ring 146 needs to be the same as the surface of the wafer W.
- the surface of the focus ring 146 is formed by sputtering using plasma during etching.
- the problem that the radial uniformity of etching deteriorates has become apparent.
- the sheet-like actuator 148 having the basic structure of the third embodiment or the fourth embodiment is provided under the focus ring 146 as a gap adjustment sheet, and by this sheet-like actuator 148, sputtering by plasma is performed.
- the focus ring 146 is raised by the amount of shaving.
- the sheet-like actuator 148 has, for example, an inner diameter of 300 mm, an outer diameter of 500 mm (or 350 mm), a thickness of 2 mm or less, a variable amount of ⁇ 50% or more, and an operating temperature of 80 to 200. It is required that the thermal conductivity be as high as possible at 1 ° C. (for example, 1 W / mK).
- the breakdown voltage is 3000 V, and in the case of an etching apparatus for polysilicon etching, the maximum voltage is 1000 V.
- FIG. 14 is a cross-sectional view showing a mounting table of a plasma etching apparatus using the sheet-like actuator of the present invention as a shape correction sheet for correcting the shape of a wafer on the mounting table.
- the basic structure of the mounting table 160 is the same as that of the mounting table 140 described above.
- the mounting table 160 is provided with a disk-shaped sheet-like actuator 162 having a basic structure similar to that of the third embodiment or the fourth embodiment between the electrostatic chuck 144 and the wafer W. Further, the sheet-like actuator 148 is not provided under the focus ring 146, but may be provided.
- the sheet-like actuator 162 is used for correcting the warp and distortion of the wafer W and returning it to the horizontal position. As shown in the plan view of FIG. 15, the actuator element 10 or 10 ′ is raised every 4 cm 2, for example. Arranged in density.
- the wafer W is not warped or distorted and the wafer W is horizontal, but the actual wafer W has less warpage or distortion. In some cases, the etching uniformity is not sufficient.
- the sheet-like actuator 162 having the basic structure of the third embodiment or the fourth embodiment is provided between the wafer W and the electrostatic chuck 144 as a shape correction sheet of the wafer W, and this sheet-like The actuator 162 returns the wafer W to a horizontal plane and improves etching uniformity.
- the sheet-like actuator 162 has almost the same size as the wafer W. Further, it is preferable that the thermal conductivity is as high as possible when the thickness is 2 mm or less, the variable portion is ⁇ 50% or more, the operating temperature is 80 to 200 ° C. In the case of an etching apparatus for an oxide film, the breakdown voltage is 3000 V, and in the case of an etching apparatus for polysilicon etching, the maximum voltage is 1000 V. These specifications are sufficient for a sheet-like actuator having the basic structure of the third embodiment or the fourth embodiment.
- FIG. 16 is a cross-sectional view showing a heating unit of a baking apparatus using the sheet-like actuator of the present invention as a gap adjusting sheet.
- the heating unit 170 includes a base plate 172 for holding a horizontal plane, a sheet-like actuator 174 used as a gap adjusting sheet provided thereon, and a film-like heater 176 provided thereon.
- a plurality of wafer support pins (proximity pins) 178 are provided on the heater 176.
- a wafer is placed on the wafer support pins 178.
- the sheet-like actuator 174 has a basic structure similar to that of the sheet-like actuator 20 of the third embodiment or the sheet-like actuator 20 ′ of the fourth embodiment, and the gap between the wafer W and the sheet-like heater 176 is constant. Thus, the gap W is adjusted to keep the temperature of the wafer W uniform.
- the actuator element 10 or 10 ' is partitioned as shown in the plan view of FIG. 17, and every 14 to 32 cm 2 (30 to 30 mm for a 300 mm wafer). 50 sections).
- a sheet-like actuator 174 having the basic structure of the third embodiment or the fourth embodiment is provided under the sheet-like heater 176 so that the gap becomes uniform corresponding to the deformation of the wafer W. Then, each actuator element 10 or 10 'of the sheet-like actuator 174 is driven. As a result, the in-plane uniformity of the wafer temperature becomes extremely high.
- the gap adjustment by the sheet-like actuator 174 at this time is provided with a plurality of thermocouples for measuring temperatures at a plurality of positions on the back surface temperature of the wafer W, and each actuator element 10 or 10 'is driven so that the temperature becomes uniform.
- a sensor on which a thermocouple pattern is printed may be prepared separately, and temperature measurement may be performed using this sensor.
- the sheet actuator 174 has almost the same size as the wafer. When the wafer is ⁇ 450 mm, the adjustment gap height needs to be 0.4 mm or more.
- the operating temperature is from room temperature to 180 ° C. (or from room temperature to 250 ° C., or from room temperature to 300 ° C.). These specifications are sufficient for a sheet-like actuator having the basic structure of the third embodiment or the fourth embodiment.
- the coating / developing apparatus has a cooling device, and this cooling device also mounts the wafer on the cooling plate via the support pins. Therefore, as in the case of the baking device, the cooling plate is interposed between the cooling plate and the wafer. By performing gap adjustment using a sheet-like actuator having a similar configuration, it is possible to ensure the desired uniformity of the wafer temperature.
- FIG. 18A is a plan view showing such a wafer chuck
- FIG. 18B is a side view thereof.
- the wafer chuck 180 has a pair of wafer holding arms 182, and holds the wafer by sandwiching the wafer between the wafer holding arms 182.
- the wafer holding arm is entirely made of an abrasion-resistant resin, and has a main body portion 184 having an arc shape along the wafer W, and a wafer placement portion 186 on which the wafer W is placed, protruding inward from both sides of the main body portion 184. And an edge holder 188 provided to hold the edge of the wafer W at the center of the main body.
- the actuator element 10 or 10 ' is used as the edge holder 188. Then, when the wafer W is sandwiched between the pair of wafer holding arms 182, the actuator element 10 or 10 ′ constituting the edge holder 188 is projected toward the edge of the wafer W. At this time, since the actuator element 10 or 10 'can hold the wafer W softly, particles or the like are not generated, and the wafer W can be stably fixed.
- this type of wafer chuck has a problem that a large acceleration of several tens of G in the horizontal direction and 1 G in the vertical direction is exerted when the wafer is transferred, and the wafer is easily detached. Accordingly, even a large-diameter wafer can be stably held without being detached.
- the actuator element 10 or 10 ′ used for the edge holder 188 has an operating temperature of room temperature to 100 ° C. and an operating speed of several tens of msec, but this specification can be sufficiently satisfied.
- MEMS Micro Electro Mechanical Systems
- a wafer on which a MEMS pattern is formed must be chucked on the entire wafer surface.
- the wafer can be easily detached only by being placed on the transfer arm when the wafer is transferred.
- the sheet-like actuator of the present invention is used to realize a transfer arm that can attract a wafer.
- the transfer arm 190 of this example includes a sheet-like actuator 192 having the same basic structure as that of the third embodiment or the fourth embodiment, and a hole spacer 194 provided thereon. Then, the MEMS pattern wafer W is placed on the hole spacer 194.
- a section S is formed, for example, every 1 cm 2 according to the pattern of the wafer, and the actuator element 10 or 10 ′ is provided for each section S.
- the hole spacer 194 has a section S formed for every 1 cm 2 corresponding to the sheet-like actuator 192, and a hole 195 is formed in the predetermined section S.
- a hole may be provided in a predetermined section S, or a hole may be provided for each section S, and the actuator element 10 or 10 'may be selectively ON / OFF controlled. Then, in the section S having the hole 195 of the hole spacer 194, as shown in FIG. 19D, after the wafer W is placed, the actuator element 10 or 10 ′ is driven to expand the volume of the vacuum space V. In other words, the wafer W is vacuum-sucked through the hole 195 by operating the thinned sheet-like actuator 192 immediately below the hole 195 to protrude downward. By performing the same operation in the plurality of sections S in which the holes 195 are formed, the wafer W can be sucked and fixed. Thereby, a MEMS pattern wafer can be stably conveyed at high speed.
- the actuator element in this case has an operating temperature of ⁇ 40 to 150 ° C. and an ON / OFF operating speed of 1 sec or less, and the actuator elements 10 and 10 ′ of the above embodiment are sufficiently satisfied.
- the present invention is not limited to the above embodiment and can be variously modified.
- the plate-shaped and origami-shaped ones are used as the displacement elements of the actuator elements, but the present invention is not limited to this.
- a part of container which accommodates an actuator element was used as a displacement transmission part, it does not restrict to this.
- the above application examples are merely examples, and it goes without saying that the present invention is not limited to such examples.
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Abstract
Description
本発明の他の目的は、基板を支持する際に基板の変形を矯正することや、基板の変形に追従することや、部材の位置合わせ等が可能なシート状アクチュエータを提供することにある。
図1は本発明の第1の実施形態に係るアクチュエータ素子を示す概略断面図である。
図2Aは電極12および13に電圧が印加されていない場合の変位子11の状態であり、変位子11においては、シリコーンを含むエラストマーにイオン液体の+成分と-成分が均一に分散している。図2Bは電極12および13の間に電圧が印加された場合の変位子11の状態であり、イオン液体における+成分は負極である電極13に引き寄せられ、-成分は正極である電極12に引き寄せられ、イオン液体に分極が生じる。これにより、変位子11の中で成分の偏りが形成され、変位子11が変形することによって変位が生ずる。また変位子11を2個使い、変位子11の長さ方向にその2個の変位子11を直列に並べ、対向する中央部の端部同士を上方へ屈曲させれば、その変位力を増加することもできる。
次に、本発明の第2の実施形態について説明する。
図3A、図3Bは本発明の第2の実施形態に係るアクチュエータ素子を示す概略断面図である。
図4のうち(a)は電極12′および13′に電圧が印加されていない場合の変位子11′の状態であり、変位子11′は折りたたまれた状態である。この状態から電極12′および13′の間に電圧を印加すると、第1の実施形態で説明したように分極が生じて変位子11′の中で成分の偏りが形成され、変位子11′が変形することによって、(b)に示すように、一方向(図では上方)に変位が生ずる。
本実施形態のアクチュエータ素子10′は、第1の実施形態と同様、変位子11′が有機材料であるため、電圧印加による変形が大きく、ストロークを大きくとることができる。また、空気中でも安定に動作させることができ、適用の制限は存在しない。
本実施形態は、複数のアクチュエータ素子を複数備えたシート状アクチュエータについて示す。図5は本発明の第3の実施形態に係るシート状を示す平面図、図6はその一部を示す断面図である。
本実施形態も、第3の実施形態と同様、複数のアクチュエータ素子を複数備えたシート状アクチュエータについて示す。図7は本発明の第4の実施形態に係るシート状アクチュエータを示す平面図、図8はその一部を示す断面図である。
以下、上記実施形態のアクチュエータ素子、シート状アクチュエータの応用例について説明する。
図9は、上記第1の実施形態または第2の実施形態のアクチュエータ素子を荷重調節部材として用いたプローブ装置の一例を示す断面図、図10は図9のプローブ装置の連結部材の上面付近の平面図である。
プローブ装置40は、半導体ウエハ(以下、単にウエハと記す)の電気的特性を検査するためのものであり、プローブカード41と、被検査体としてのウエハWを載置する載置台42とを有している。プローブカード41は、載置台42の上方に配置されている。
図11は、電極パッドUの位置変位Sと、接触子90と電極パッドUとの接触荷重として発生する荷重Fとの関係を示すグラフである。なお、図11中の発生荷重F1は、例えば接触子90、支持板51、連結部材54、連結体55等の移動可能な部材の重さ、中間部材70の初期荷重の総和となる。まず、ウエハWが載置台42上に保持されると、載置台42が上昇し、ウエハWの各電極パッドUが接触子90に接触する。この接触の瞬間における電極パッドUの位置変位Sと発生荷重Fとの関係が、図11の点Aとなる。
(1)フォーカスリングへの応用例
ここでは、プラズマエッチング装置の載置台において、ウエハの周囲に配置されるフォーカスリングのギャップ調整シートとして本発明のシート状アクチュエータを用いた例を示す。
載置台140は、チャンバの底部に絶縁板を介して設けられ、小径の上段部142aと大径の下段部142bを有する段付き円柱状をなす載置台本体142を有している。小径の上段部142aの上面にはクーロン力等の静電力によりウエハWを吸着する静電チャック144が設けられている。
ここでは、プラズマエッチング装置の載置台において、ウエハの下に形状矯正シートとして本発明のシート状アクチュエータを用いた例を示す。
図14は、載置台におけるウエハの形状を矯正する形状矯正シートとして本発明のシート状アクチュエータを用いたプラズマエッチング装置の載置台を示す断面図である。
ここでは、フォトレジスト塗布・現像装置のベーク装置において、ウエハのギャップを調整するギャップ調整シートとして本発明のシート状アクチュエータを用いた例を示す。
図16は、ギャップ調整シートとして本発明のシート状アクチュエータを用いたベーク装置の加熱部を示す断面図である。加熱部170は、水平面保持のためのベース板172と、その上に設けられたギャップ調整シートとして用いられるシート状アクチュエータ174と、その上に設けられたフィルム状ヒータ176とを有し、フィルム状ヒータ176の上には複数のウエハ支持ピン(プロキシミティピン)178が設けられている。そしてウエハ支持ピン178上にウエハが載置されるようになっている。
ここでは、ウエハ塗布・現像装置においてウエハの搬送に用いられるウエハチャックに本発明のアクチュエータ素子を適用した例について説明する。図18Aはこのようなウエハチャックを示す平面図、図18Bはその側面図である。このウエハチャック180は、一対のウエハ保持アーム182を有し、これらウエハ保持アーム182によりウエハを挟むことによりウエハを保持する。
MEMS(Micro Electro Mechanical Systems)は、機械要素部品、センサ、アクチュエータ、電子回路を一つのウエハ等の上に集積化したデバイスであるが、MEMSパターンが形成されたウエハは、ウエハ全面でチャックすることができず、ウエハ搬送の際に搬送アームに置いただけの状態で搬送せざるを得ず、ウエハが外れやすいという問題がある。
Claims (12)
- シリコーンを含むエラストマーとイオン液体との混合物からなり、電圧が印加されることにより変位する変位子、および変位子に電圧を印加するための電極を有する素子本体と、
前記変位子の変位によって面外方向に変位する変位伝達部と
を具備するアクチュエータ素子。 - 前記変位子は板状をなし、電圧を印加することにより、一方側が曲がるように変位する請求項1に記載のアクチュエータ素子。
- 前記変位子は折り紙状をなし、電圧を印加することにより一方向に伸張する請求項1に記載のアクチュエータ素子。
- 基板上に形成された多数の電極パッドに接触子を接触させて電気特性を測定するプローブ装置において、前記電極パッドと接触子の接触荷重を一定に維持するための荷重調整部材として設けられている請求項1に記載のアクチュエータ素子。
- 基板を一対の基板保持アームで保持して搬送する基板チャックにおいて、基板を挟むときに突出するように設けられた請求項1に記載のアクチュエータ素子。
- シリコーンを含むエラストマーとイオン液体との混合物からなり、電圧が印加されることにより変位する変位子、および変位子に電圧を印加するための電極を有する複数の素子本体と、
その中に前記複数の素子本体が平面状に配置される扁平状の容器と、
前記複数の素子本体の各変位子の変位によって面外方向に変位する共通の変位伝達部と
を有するシート状アクチュエータ。 - 前記変位子は板状をなし、電圧を印加することにより、一方側が曲がるように変位する請求項6に記載のシート状アクチュエータ。
- 前記変位子は折り紙状をなし、電圧を印加することにより一方向に伸張する請求項6に記載のシート状アクチュエータ。
- プラズマエッチング装置の基板を載置する載置台において、基板の外周に設けられるフォーカスリングの下に設けられ、前記フォーカスリングがプラズマで削られた際に削られた分だけ前記フォーカスリングを上方に変位させる請求項6に記載のシート状アクチュエータ。
- プラズマエッチング装置の基板を載置する載置台において、基板を支持するように設けられ、基板の変形を矯正するように変位する請求項6に記載のシート状アクチュエータ。
- 加熱部または冷却部を介して基板を加熱または冷却する装置において、基板と加熱部または冷却部との間のギャップが均一になるように変位する請求項6に記載のシート状アクチュエータ。
- 基板を吸着保持する基板チャックに用いられるシート状アクチュエータであって、穴を有するスペーサを介在させて基板が載置され、複数の領域においてアクチュエータ素子の変位子を変位させることにより、前記スペーサの穴を介して基板を真空チャックする請求項6に記載のシート状アクチュエータ。
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JP7079463B2 (ja) * | 2017-09-22 | 2022-06-02 | 国立研究開発法人産業技術総合研究所 | 透明な積層体及び透明ゲルアクチュエータ素子並びにその製造法 |
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JP2002332956A (ja) * | 2001-05-02 | 2002-11-22 | National Institute Of Advanced Industrial & Technology | 膜型アクチュエータ及びそのアクチュエータを用いた液体封入式防振装置並びにそのアクチュエータを用いた流体制御装置 |
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WO2009072341A1 (ja) * | 2007-12-04 | 2009-06-11 | Tokyo Electron Limited | プローブ装置 |
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JP2002332956A (ja) * | 2001-05-02 | 2002-11-22 | National Institute Of Advanced Industrial & Technology | 膜型アクチュエータ及びそのアクチュエータを用いた液体封入式防振装置並びにそのアクチュエータを用いた流体制御装置 |
JP2004260159A (ja) * | 2003-02-07 | 2004-09-16 | Tokyo Electron Ltd | プラズマ処理装置、リング部材およびプラズマ処理方法 |
JP2006203982A (ja) * | 2005-01-19 | 2006-08-03 | Yaskawa Electric Corp | 高分子アクチュエータおよび多関節ハンドロボット |
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WO2009072341A1 (ja) * | 2007-12-04 | 2009-06-11 | Tokyo Electron Limited | プローブ装置 |
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