WO2011040173A1 - Appareil de formation de film, procédé de formation de film et appareil de traitement de substrat - Google Patents

Appareil de formation de film, procédé de formation de film et appareil de traitement de substrat Download PDF

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Publication number
WO2011040173A1
WO2011040173A1 PCT/JP2010/065034 JP2010065034W WO2011040173A1 WO 2011040173 A1 WO2011040173 A1 WO 2011040173A1 JP 2010065034 W JP2010065034 W JP 2010065034W WO 2011040173 A1 WO2011040173 A1 WO 2011040173A1
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WIPO (PCT)
Prior art keywords
gas
container
processing
substrate
radical
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PCT/JP2010/065034
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English (en)
Japanese (ja)
Inventor
政幸 諸井
賢太朗 朝倉
崇 西森
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東京エレクトロン株式会社
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Publication of WO2011040173A1 publication Critical patent/WO2011040173A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

Definitions

  • the present invention relates to a film forming apparatus and a film forming method for forming a film by CVD, and a substrate processing apparatus.
  • a TiN film is used as a material for a barrier film, an electrode, etc.
  • CVD Chemical Vapor Deposition
  • a TiN film is formed by CVD
  • thermal CVD is used in which TiCl 4 gas and NH 3 gas are supplied as film forming gases while heating the substrate (semiconductor wafer) (for example, Japanese Patent Laid-Open No. 06-188205). Publication).
  • TiN film formation using TiCl 4 gas and NH 3 gas has been conventionally performed at a film formation temperature of about 600 ° C. Recently, however, further miniaturization of various devices and consolidation of different devices. Therefore, a technique for forming a film at a temperature as low as about 450 ° C. by alternately repeating TiCl 4 gas and NH 3 gas with a purge interposed therebetween has been proposed (for example, Japanese Patent Application Laid-Open No. 2005-318867). 2003-077784)), further temperature reduction has been attempted.
  • the TiN film is usually formed by thermal CVD, it is necessary to add a large plasma generation mechanism in order to turn hydrogen into plasma. Further, when the process such as film formation and the hydrogen process are performed in the same chamber, the process becomes complicated, and when the process is performed in another chamber, the number of facilities is increased.
  • Such a problem is not limited to the removal of impurities by hydrogen plasma treatment, but also exists when other treatments such as film modification with excited gas are performed.
  • An object of the present invention is to provide a film forming apparatus and a film forming method capable of effectively performing a film modification process such as removal of impurities in the film without excessive equipment burden when performing CVD film formation.
  • Another object of the present invention is to provide a substrate processing apparatus capable of processing a substrate with an excitation gas with simple equipment.
  • a processing container that accommodates a substrate to be processed, a substrate support member that supports the substrate to be processed in the processing container, and a predetermined film on the substrate to be processed in the processing container.
  • a process gas supply mechanism for supplying a process gas for forming a film, a heating means for heating the substrate to be processed, and a radical supply for supplying radicals into the process container provided separately from the process container
  • a mechanism for generating radicals a gas supply mechanism for supplying gas into the container; a catalyst provided in the container for exciting the gas;
  • a heating means for heating the catalyst; and a radical introduction pipe for introducing a radical generated by contact of the gas with the catalyst heated in the container into the processing container, and supplying the processing gas into the processing container. From the mechanism A thin film is formed on the substrate to be processed by introducing a processing gas, and the thin film formed on the substrate to be processed is modified by supplying the radicals generated in the container to the processing container.
  • a film forming apparatus is provided.
  • the processing substrate is carried into the processing container, and a processing gas for forming a predetermined film on the processing substrate is supplied into the processing container.
  • a processing gas for forming a predetermined film on the processing substrate is supplied into the processing container.
  • the processing container for storing the substrate to be processed, the processing means for performing a predetermined process on the substrate to be processed in the processing container, and the processing container are provided separately.
  • a radical supply mechanism for supplying radicals into the processing container wherein the radical supply mechanism is provided in the container for generating radicals, a gas supply mechanism for supplying gas into the container, A catalyst for exciting the gas; heating means for heating the catalyst; and a radical introduction pipe for introducing a radical generated by the gas contacting the catalyst heated in the vessel into the processing vessel.
  • a substrate processing apparatus is provided in which radical processing is performed on the substrate to be processed by supplying radicals generated in the container into the processing container.
  • a storage medium that operates on a computer and stores a program for controlling a film forming apparatus, and the program is stored in a processing container in a processing container at the time of execution. , Supplying a processing gas for forming a predetermined film on the substrate to be processed into the processing container, forming a thin film on the processing substrate, Generating a radical by bringing a gas into contact with a heated catalyst in a container provided in the container, and introducing the radical generated in the container into the processing container to modify the thin film.
  • a storage medium is provided for causing a computer to control the film forming apparatus so that the film forming method is performed.
  • the processing container is provided with a container having a simple configuration only having a catalyst via a pipe, the radical generated by bringing the gas into contact with the heated catalyst is introduced into the processing container.
  • the substrate can be treated with radicals that are excitation gases.
  • FIG. 2 It is a schematic sectional drawing which shows the film-forming apparatus which concerns on one Embodiment of this invention. It is a schematic sectional drawing which shows the hydrogen radical supply mechanism of the film-forming apparatus of FIG. 2 is a timing chart showing an example of a sequence when a TiN film is formed by the film forming apparatus of FIG. 1. It is a schematic sectional drawing which shows the film-forming apparatus which concerns on other embodiment of this invention.
  • FIG. 1 is a schematic sectional view showing a film forming apparatus according to an embodiment of the present invention.
  • a case where a TiN film is formed will be described as an example.
  • the film forming apparatus 100 has a substantially cylindrical chamber (processing container) 1. Inside the chamber 1 is a cylinder provided with a susceptor 2 made of AlN as a substrate support member for horizontally supporting a semiconductor wafer (hereinafter simply referred to as a wafer) W as a substrate to be processed. It arrange
  • a guide ring 4 for guiding the wafer W is provided on the outer edge of the susceptor 2.
  • a heater 5 made of a high melting point metal such as molybdenum is embedded in the susceptor 2, and the wafer W as a substrate to be processed is heated to a predetermined temperature by being supplied with power from the heater power source 6. The temperature control in this case is performed based on the temperature detected by a thermocouple (not shown) embedded in the susceptor 2.
  • the susceptor 2 is provided with three (only two shown) wafer support pins 7 for supporting the wafer W to be moved up and down so as to protrude and retract with respect to the surface of the susceptor 2. It is supported by the plate 8.
  • the wafer support pins 7 are moved up and down via a support plate 8 by a drive mechanism 9 such as an air cylinder.
  • a circular hole 10 is formed at the center of the bottom wall 1b of the chamber 1, and an exhaust chamber 11 is provided on the bottom wall 1b so as to protrude downward so as to cover the hole 10.
  • An exhaust pipe 12 is connected to a side surface of the exhaust chamber 11, and an exhaust device 13 having a vacuum pump, a pressure control valve, and the like is connected to the exhaust pipe 12. By operating the exhaust device 13, the inside of the chamber 1 can be depressurized to a predetermined degree of vacuum.
  • a loading / unloading port 15 for loading / unloading the wafer W to / from a wafer transfer chamber (not shown) provided adjacent to the chamber 1, and a gate valve 16 for opening / closing the loading / unloading port 15 are provided. Is provided.
  • a gas inlet 17 for introducing gas into the chamber 1 is provided in the center of the top wall 1 a of the chamber 1.
  • a pipe 18 is connected to the gas introduction port 17.
  • a plurality of gas supply pipes of a gas supply mechanism 20 for supplying gas into the chamber 1 and a hydrogen radical supply mechanism 40 are connected to the pipe 18. Piping is connected.
  • Gas supply mechanism 20 includes a N 2 gas N 2 gas supply source 21 for supplying used as the purge gas, the ClF 3 gas supply ClF 3 gas supply source 22 is a cleaning gas for cleaning the inside of the chamber 1, the Cl It has a TiCl 4 gas supply source 23 for supplying a TiCl 4 gas that is a film forming gas contained therein, and an NH 3 gas supply source 24 for supplying an NH 3 gas that is a nitriding gas. From these N 2 gas supply source 21, ClF 3 gas supply source 22, TiCl 4 gas supply source 23, and NH 3 gas supply source 24, gas supply pipes 25, 26, 27, and 28 respectively extend. It is connected. These gas supply pipes 25, 26, 27, and 28 are provided with a mass flow controller 29 that is a flow rate controller, and valves 30 and 31 are provided before and after the mass flow controller 29. The gas can be selectively supplied by operating the valve.
  • the hydrogen radical supply mechanism 40 includes a remote CAT 41 that generates hydrogen radicals, a hydrogen gas supply mechanism 42 that supplies hydrogen gas to the remote CAT 41, a hydrogen radical supply pipe 43 that supplies hydrogen radicals generated by the remote CAT 41 to the pipe 18, and have.
  • the hydrogen gas supply mechanism 42 includes a hydrogen gas supply source 45 and a hydrogen gas supply pipe 46 that guides the hydrogen gas from the hydrogen gas supply source 45 to the hydrogen radical generator 41.
  • the hydrogen gas supply pipe 46 is provided with a mass flow controller 47 that is a flow rate controller, and valves 48 and 49 are provided before and after the mass flow controller 47.
  • the remote CAT 41 has a container 51 having an internal space, and a hydrogen gas inlet 52 for introducing hydrogen gas is provided in the upper part of the container 51.
  • the hydrogen gas supply pipe 46 is connected to the gas inlet 52.
  • a catalyst wire 53 made of a conductive high melting point material such as tungsten is provided in the container 51.
  • the catalyst wire 53 is stretched around the hydrogen gas inlet 52 in the container 51 so that the hydrogen gas is in sufficient contact therewith. Both ends of the catalyst wire 53 are connected to electrodes 54 a and 54 b, respectively. These electrodes 54 a and 54 b extend upward from the container 51.
  • a power supply line 55 extends from the electrodes 54 a and 54 b, and a variable DC power source 56 is connected to the power supply line 55 so that power can be supplied to the catalyst wire 53.
  • the catalyst wire 53 is heated to a high temperature of, for example, 1400 ° C. or higher by supplying power to the catalyst wire 53 from the variable DC power source 56.
  • the material of the catalyst wire 53 is not limited to tungsten, and other metal catalysts that can be heated to a high temperature, such as Pt, Ta, and Mo, can be used.
  • the gas for generating hydrogen radicals is not limited to hydrogen gas, and may be any gas containing hydrogen capable of generating hydrogen radicals (atomic hydrogen) when contacting the catalyst medium wire 53. For example, SiH 4 , CH 4 , NH 3 or the like can also be used.
  • the catalyst wire 53 is installed so that the hydrogen gas supplied from the introduction port 52 into the container 51 can be efficiently contacted.
  • the installation mode of the catalyst wire 53 is not particularly limited as long as hydrogen gas can be efficiently contacted, it is preferable that the catalyst wire 53 is stretched over the entire cross section of the container 51.
  • the hydrogen radical discharge port 57 is provided in the lower part of the side wall of the container 51, and the hydrogen radical supply pipe 43 is connected to the hydrogen radical discharge port 57.
  • the hydrogen radical supply pipe 43 is provided with a valve 58. Then, after generating high-pressure hydrogen radicals in the container 51, the hydrogen radicals are supplied into the chamber 1 by opening the valve 58.
  • the film forming apparatus 100 includes a control unit 60, and by this control unit 60, each component, for example, the heater power source 6, the exhaust device 13, the mass flow controllers 29 and 47, the valves 30, 31, 48, 49 and 58, variable The DC power source 56 and the like are controlled.
  • the control unit 60 includes a process controller 61 including a microprocessor (computer), a user interface 62, and a storage unit 63. Each component of the film forming apparatus 100 is electrically connected to the process controller 61 and controlled.
  • the user interface 62 is connected to the process controller 61, and a keyboard on which an operator inputs a command to manage each component of the film forming apparatus 100, and an operation status of each component of the film forming apparatus 100. It consists of a display etc.
  • the storage unit 63 is also connected to the process controller 61, and the storage unit 63 corresponds to a control program for realizing various processes executed by the film forming apparatus 100 under the control of the process controller 61 and processing conditions.
  • a control program for causing each component of the film forming apparatus 100 to execute a predetermined process, that is, a process recipe, various databases, and the like are stored.
  • the processing recipe is stored in a storage medium (not shown) in the storage unit 63.
  • the storage medium may be a fixed medium such as a hard disk or a portable medium such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example.
  • a predetermined processing recipe is called from the storage unit 63 by an instruction from the user interface 62 and is executed by the process controller 61, so that the film forming apparatus 100 can control the process controller 61. Desired processing is performed.
  • the inside of the chamber 1 is evacuated by the exhaust device 13, and the inside of the chamber 1 is preheated to 200 to 500 ° C. by the heater 5 while N 2 gas is introduced into the chamber 1 from the N 2 gas supply source 21.
  • N 2 gas is introduced into the chamber 1 from the N 2 gas supply source 21.
  • TiCl 4 was introduced into the TiCl 4 gas, and NH 3 chamber 1 at a predetermined flow rate alternately NH 3 gas from the gas supply source 24 from the gas supply source 23, the chamber 1 inner wall, the exhaust chamber 11 TiN film is precoated on the inner wall or the like.
  • N 2 gas is supplied as purge gas from the N 2 gas supply source 21 into the chamber 1 to purge the chamber 1. Thereafter, if necessary, N 2 gas and NH 3 gas are flowed to perform a nitride treatment on the surface of the TiN thin film precoated on the inner wall of the chamber 1 or the like.
  • the gate valve 16 is opened, and the wafer W is loaded into the chamber 1 via the loading / unloading port 15 (not shown) by the transfer device and placed on the susceptor 2. Then, the wafer W is heated to 200 to 500 ° C. by the heater 5, and N 2 gas is supplied from the N 2 gas supply source 21 into the chamber 1 so that the pressure in the chamber 1 is 133 to 1330 Pa (1 to 10 Torr). W is preheated. When the temperature of the wafer is substantially stabilized, the formation of a TiN film, which is a thin film, is started.
  • the valve 30 of the gas supply pipes 25 to 28 is opened, the valve 31 is closed, and the valve 58 of the hydrogen radical supply pipe 43 is also closed.
  • the valve 31 is opened to supply the flow in the chamber 1 of TiCl 4 ⁇ 5 from the gas supply source 23 to the TiCl 4 gas 100mL / min (sccm) of the supply pipe 27, the step 1 of adsorbing TiCl 4 on the wafer W Perform for 0.01 to 10 seconds.
  • Step 2 to stop the supply of the TiCl 4 gas by closing the valve 31 of the gas supply pipe 27, and 100 and N 2 gas as a purge gas from the N 2 gas supply source 21 by opening the valve 31 of the gas supply pipe 25 10000 mL / min ( Step 2 of supplying the gas into the chamber 1 at a flow rate of sccm and purging the chamber 1 is performed for 0.01 to 20 seconds.
  • the valve 31 of the gas supply pipe 25 is closed to stop the supply of the purge gas
  • the valve 31 of the gas supply pipe 24 is opened, and NH 3 gas is supplied from the NH 3 gas supply source at a flow rate of 100 to 10000 mL / min (sccm).
  • Step 3 which is supplied into the chamber 1 and forms a TiN film by the thermochemical reaction between the adsorbed TiCl 4 and NH 3 is performed for 0.01 to 10 seconds. Then, to stop the supply of the NH 3 gas by closing the valve 31 of the gas supply pipe 28, and 100 and N 2 gas as a purge gas from the N 2 gas supply source 21 by opening the valve 31 of the gas supply pipe 25 10000 mL / min ( Step 4 of supplying the gas into the chamber 1 at a flow rate of sccm) and purging the chamber 1 is performed for 0.01 to 20 seconds.
  • Step 5 of supplying to is performed for 0.01 to 20 seconds.
  • Step 6 of supplying the gas into the chamber 1 and purging the chamber 1 is performed for 0.01 to 20 seconds.
  • the TiN film is formed by using the ALD method, that is, repeating the above steps 1 to 6 as one cycle and repeating a plurality of cycles, for example, about 50 to 200 times.
  • the gas switching at this time is performed by switching the valve according to a command from the process controller 61 of the control unit 60.
  • a ClF 3 gas as a cleaning gas is supplied from the ClF 3 gas supply source 22 into the chamber 1 to clean the chamber 1. .
  • the catalyst wire 53 made of a conductive high melting point material such as tungsten in the container 51 is heated to a high temperature of 1400 ° C. or higher, and 50 to 10,000 mL / min from the hydrogen gas supply source 45.
  • Hydrogen gas is supplied to the container 51 at a flow rate of (sccm), and hydrogen radicals (H * ) are generated by bringing the hydrogen gas into contact with the hot catalyst wire 53.
  • a sufficient amount of hydrogen radicals can be supplied into the chamber 1 at the moment when the valve 58 is opened.
  • the remote CAT 41 since the remote CAT 41 has the container 51 separated and independent from the chamber 1, the internal pressure can be freely set.
  • the film formation is performed based on the ALD method, the supply of hydrogen radicals does not need to be dispersed with good uniformity using a shower head.
  • the chamber 1 is provided with a remote CAT 41 having a simple configuration only having the catalyst wire 53 via the pipe 43 and the valve 58, and hydrogen radicals generated by bringing hydrogen gas into contact with the heated catalyst wire 53 are generated in the chamber 1. Therefore, Cl that is an impurity in the film can be removed without excessive equipment burden.
  • Remote plasma exists as a similar technology.
  • hydrogen plasma radical
  • a high-frequency power source and matching unit are required to generate plasma, and the equipment burden is large.
  • the pressure in the container cannot be increased to form plasma. For this reason, it may be difficult to introduce hydrogen plasma (radicals) sufficient to remove impurities in the film such as Cl into the chamber 1.
  • the supply of hydrogen radicals is not necessarily performed every time after a thin TiN film is formed by the reaction of TiCl 4 gas and NH 3 gas, and may be performed once every several times, It may be performed only once after the TiN film is formed.
  • the film may be formed by normal CVD in which these are simultaneously supplied into the chamber 1.
  • the gas needs to be uniformly supplied to the wafer W, which is the substrate to be processed, and therefore a film formation apparatus having a shower head shown in FIG. 4 is used.
  • the film forming apparatus 100 ′ of FIG. 4 is provided with a shower head 80 at the upper part in the chamber 1 of the film forming apparatus 100 of FIG. 1 so as to face the susceptor 2.
  • the gas reaches the internal space 81 of the shower head 80 and is supplied to the entire surface of the wafer W through a plurality of gas discharge holes 82 provided at the bottom thereof.
  • the configuration other than the shower head is exactly the same as that of the film forming apparatus 100 in FIG. 1, and thus the same components as those in FIG.
  • the gas can be supplied uniformly over the entire surface of the wafer W using the shower head 80, even if TiCl 4 gas, NH 3 gas, and hydrogen radicals are supplied simultaneously, the gas is uniformly supplied. A TiN film can be formed.
  • the film forming apparatus 100 ′ provided with the shower head 80 may be used to perform film formation by alternate supply as described above.
  • the processing container is provided with a container having a simple configuration only having a catalyst via a pipe, and the radical generated by bringing a gas into contact with the heated catalyst is subjected to a film forming process.
  • the thin film formed in the processing container can be modified without excessive equipment burden.
  • the present invention can be variously modified without being limited to the above embodiment.
  • the present invention is not limited to this, and the present invention can be applied to other films that require removal of impurities, such as metal chloride gas.
  • It can be applied to Ti, Ta, W film formation using Si as a raw material, and is not limited to film formation, but can be used for all substrate processing applications that require supply of hydrogen radicals, such as for removing carbon from MO-CVD films.
  • the present invention can also be applied to such a reforming process.
  • other gas radicals such as nitrogen radicals and oxygen radicals can be supplied.
  • the present invention is not limited thereto, and other substrates such as a flat panel display (FPD) substrate may be used.
  • FPD flat panel display

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention porte sur un appareil de formation de film, qui comprend une chambre (1), un creuset pour supporter une tranche et un mécanisme d'alimentation en gaz de traitement, un élément chauffant pour chauffer la tranche, et un mécanisme d'alimentation en radicaux hydrogène (40) qui est disposé séparément de la chambre dans le but de délivrer des radicaux hydrogène dans la chambre. Le mécanisme d'alimentation en radicaux hydrogène (40) comprend un récipient (51) pour générer des radicaux hydrogène, un mécanisme d'alimentation en gaz hydrogène (42) pour délivrer un gaz hydrogène dans le récipient (51), un fil de catalyseur (53) qui est disposé à l'intérieur du récipient (51), une alimentation en courant continu variable (56) pour chauffer le fil de catalyseur (53), et un tuyau d'introduction de radicaux hydrogène (43) pour introduire des radicaux hydrogène, qui sont générés lorsque le gaz hydrogène vient en contact avec le fil de catalyseur chauffé (53) à l'intérieur du récipient (51), à l'intérieur de la chambre (1).
PCT/JP2010/065034 2009-09-29 2010-09-02 Appareil de formation de film, procédé de formation de film et appareil de traitement de substrat WO2011040173A1 (fr)

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JP2009224433A JP2011074413A (ja) 2009-09-29 2009-09-29 成膜装置および成膜方法、ならびに基板処理装置
JP2009-224433 2009-09-29

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WO2011040173A1 true WO2011040173A1 (fr) 2011-04-07

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2015103101A1 (fr) 2013-12-30 2015-07-09 Gtat Corporation Blindage contre un rayonnement amélioré pour un dispositif de réaction cvd
CN115725955A (zh) * 2021-08-30 2023-03-03 新烯科技有限公司 成膜装置

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
KR102155281B1 (ko) 2017-07-28 2020-09-11 주성엔지니어링(주) 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법
JP6856478B2 (ja) * 2017-09-07 2021-04-07 キオクシア株式会社 半導体製造装置および半導体装置の製造方法

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JPH08279558A (ja) * 1995-04-06 1996-10-22 Kawasaki Steel Corp 半導体装置の製造方法
JP2000195820A (ja) * 1998-12-25 2000-07-14 Sony Corp 金属窒化物膜の形成方法およびこれを用いた電子装置
JP2007520056A (ja) * 2003-12-19 2007-07-19 アプライド　マテリアルズ　インコーポレイテッド 高品質低温窒化シリコン層を形成する方法及び装置
WO2007123102A1 (fr) * 2006-04-18 2007-11-01 Ulvac, Inc. Appareil de formation de film et procede de fabrication d'un film barriere

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08279558A (ja) * 1995-04-06 1996-10-22 Kawasaki Steel Corp 半導体装置の製造方法
JP2000195820A (ja) * 1998-12-25 2000-07-14 Sony Corp 金属窒化物膜の形成方法およびこれを用いた電子装置
JP2007520056A (ja) * 2003-12-19 2007-07-19 アプライド　マテリアルズ　インコーポレイテッド 高品質低温窒化シリコン層を形成する方法及び装置
WO2007123102A1 (fr) * 2006-04-18 2007-11-01 Ulvac, Inc. Appareil de formation de film et procede de fabrication d'un film barriere

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015103101A1 (fr) 2013-12-30 2015-07-09 Gtat Corporation Blindage contre un rayonnement amélioré pour un dispositif de réaction cvd
EP3090443A4 (fr) * 2013-12-30 2017-09-27 GTAT Corporation Blindage contre un rayonnement amélioré pour un dispositif de réaction cvd
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN115725955A (zh) * 2021-08-30 2023-03-03 新烯科技有限公司 成膜装置

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