WO2011039277A2 - Optoelektronisches organisches bauelement und verfahren zu dessen herstellung - Google Patents
Optoelektronisches organisches bauelement und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- WO2011039277A2 WO2011039277A2 PCT/EP2010/064494 EP2010064494W WO2011039277A2 WO 2011039277 A2 WO2011039277 A2 WO 2011039277A2 EP 2010064494 W EP2010064494 W EP 2010064494W WO 2011039277 A2 WO2011039277 A2 WO 2011039277A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrode
- injection layer
- energy
- optoelectronic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
Definitions
- optoelectronic organic devices is that on the surface of the electrodes, which in the interior of the
- Impurities can be attached, or the surface may, for example, metal tips. This can be, for example, the cause of possible local short circuits or local high-impedance current paths in the component.
- a previously used way of solving this problem is to subject the surface to a very expensive purification process.
- Another approach is to place a thick layer over the electrode
- An object of embodiments of the invention is to provide an opto-electronic organic device in which the statistical dispersion in the current-voltage characteristic in a plurality of these
- Component are the subject of more dependent
- Optoelectronic organic device comprising:
- a first planarization layer which is arranged on the first electrode
- Planarization layer is arranged
- Injection layer is arranged,
- the first electrode is an anode for the energy levels:
- EF _ EHOMO in. ⁇ EF-EHOMO, Plan, and Ep-EnoMo, in. ⁇ Ep-EnoMo, Funk, or in the case that the first electrode is a cathode for the energy levels:
- E F for the Fermi energy
- E HOMO for the energy of the highest occupying energy level of each layer
- E LUMO for the energy of the lowest unoccupied
- Energy levels of each layer is.
- the first electrode is an anode for the energy levels: EF _ EHOMO, in. ⁇ EF-EHOMO, Plan, and Ep-EnoMo, in. ⁇ Ep-EnoMo, Funk, or in the case that the first electrode is a cathode for the energy levels:
- Charge carriers which are emitted by the first electrode during operation of the optoelectronic organic component migrate through the first planarization layer into the first injection layer. Due to the energy levels, a potential well forms in the first injection layer in which the charge carriers can collect. By this formed by the potential well of the injection layer internal reservoir, which is within the optoelectronic organic device, ie between the two
- Electrodes of the device can thus be local
- Carrier transport within the device can be any suitable Carrier transport within the device.
- the potential pot is a kind of source for
- Charge carrier which is capable during the operation of the device charge carriers in a constant amount of a defined area to the subsequent organic Submit functional layer.
- Impurities or metal tips on the insides of the electrodes stable charge transport can be achieved in the device.
- the first electrode is an anode for the energy levels:
- the first electrode is a cathode for the energy levels:
- the height of the "sidewalls" of the potential well can be determined by means of an appropriate tuning of the energy levels
- Injection layer for injection in the following
- Carriers can be achieved.
- the height of the side walls can thus also be used to set the "capacity" of charge carriers of the potential well.
- the charge carriers emitted by the first electrode are accumulated in the first injection layer. This means that the charge carrier density in the operation of the optoelectronic organic component in the injection layer is higher than in its directly adjacent layers.
- the charge carriers accumulated in the first injection layer are injected into the subsequent layer.
- the injection of the accumulated charge carriers into the subsequent layer ensures that the subsequent layer is continuously and constantly supplied with the charge carrier, whereby the charge transport in the component is stabilized.
- the resistance of the planarization layer is preferably in the range of the resistance of the planarization layer
- the first injection layer has a layer thickness of 1 to 20 nm.
- the range of 1 to 3 nm is preferred. Even a very thin injection layer can be significant Stabilization of the carrier transport contribute. This has the advantage of being on the already thicker
- Another preferred range is 3 to 20 nm
- the first injection layer is doped.
- Electrode is an anode, the first injection layer is preferably p-doped. In the event that the first
- Electrode is a cathode, is the injection layer
- Charge carrier transport or the carrier accumulation in the injection layer can be improved.
- the first injection layer comprises a matrix material selected from: Alq 3 (LUMO -3, leV), BCP (LUMO -2.9 eV), Bphen (LUMO -2.9 eV), NTCDA (LUMO -4.0 eV), ZnPc, THAP (LUMO -4.6 eV).
- the matrix material is n-doped with one of the following substances: Li, Cs, BEDT-TTF, pyronine B chloride, Cs 2 C0 3 , Ru (terpy) 2 , CoCp 2 .
- “LUMO” stands for the lowest unoccupied
- the first injection layer comprises a substance selected from: 4, 4 ', 4 "-tris (N- (1-naphthyl) -N-phenyl-amino) triphenylamine,
- Phthalocyanine-copper complex 4, 4 ', 4 "-tris ( ⁇ -3-methylphenyl-N-phenyl-amino) triphenylamine, ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis ( phenyl) benzidine, 2,2 ', 7,7'-tetrakis (N, -diphenylamine) - 9,9'-spirobifluorene, di- [4- (N, -ditolylamino) -phenyl] cyclohexane, ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine.
- the following table shows the energy levels of the highest occupied molecular orbitals (HOMOs) of the respective substances.
- HOMOs ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -5.57 eV benzidine
- the location of the HOMOs can, for example, by means of
- Cyclic voltammetry can be determined.
- the first injection layer comprises a substance selected from:
- PEDOT PSS, poly (9-vinylcarbazole), poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine, poly (3-hexylthiophene), polyaniline.)
- HOMO HOMO ranges are given for three of these substances:
- the exact energy level value of the individual layers can be set via the respective doping thereof.
- the same matrix material can be used for the first injection layer and the first planarization layer whose exact energy levels can be adjusted, for example, by means of a dopant.
- the first planarization layer comprises a substance selected from: PEDOT: PSS, PEDOT based materials, poly (9-vinylcarbazole), poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine, poly (3-hexylthiophene), polyaniline.
- the first planarization layer comprises an inorganic
- Planarization layer This may have a substance selected from: InO, GaO, ZnO, SnO, MoO, VO, SbO, Bio, ReO, TaO, WO, NbO, NiO.
- Injection layer and organic functional layer are injection layer and organic functional layer.
- the listed substances can also be well on the electrode as a planarization layer or on the
- the first planarization layer is arranged directly on the first electrode.
- the first planarization layer has a thickness that is greater than the height of unevenness on the first electrode. This makes it possible to compensate for the unevenness on the first electrode by means of the first planarization layer.
- the optoelectronic organic component additionally comprises:
- a second planarization layer which is arranged between the second electrode and the organic functional layer
- both electrodes each have a planarization layer and between the two
- Planarizing layers and the organic functional layer is arranged in each case an injection layer.
- both the emission of electrons from the cathode and the delivery of holes from the anode to the organic functional layer are each by an injection layer
- Such an embodiment thus has a particularly stable charge carrier transport.
- electroluminescent device This may be, for example, an organic compound
- the layer stack which can form an OLED, comprises an anode as well as a cathode. Of these, holes or electrodes are emitted by applying a voltage, which migrate in the direction of the respective other electrode.
- the charge carriers migrate here
- the excitons can be phosphors that are found in the
- the OLED may comprise an organic functional layer, which may be, for example, a
- At least one further embodiment of the invention relates to a method for producing an optoelectronic organic component. In an embodiment for producing a
- optoelectronic organic device comprises the
- the first electrode is an anode for the energy levels:
- EF _ EHOMO in. ⁇ EF-EHOMO, Plan, and Ep-EnoMo, in. ⁇ Ep-EnoMo, Funk, or in the case that the first electrode is a cathode for the energy levels:
- E F for the Fermi energy
- E H OMO for the energy of the highest occupying energy level of each layer
- E LU MO for the energy of the lowest unoccupied
- the method can have features and steps by which an optoelectronic organic component having one or more of the aforementioned features can be produced.
- the first planarization layer can be applied in process step B) to the first electrode by means of vapor deposition or by means of a wet chemical process. Through the first planarization layer
- the first planarization layer is applied with a thickness such that it encloses and covers metal tips of the electrode, which are provided, for example, by a
- Injection layer as well as the organic functional layer can be applied both by vapor deposition and by means of a wet chemical process.
- the first injection layer in method step C) is applied by means of a wet-chemical method.
- the first planarization layer is applied in method step B) by means of a wet-chemical method.
- the organic functional layer in method step D) is applied by means of a wet-chemical method.
- the first injection layer, the first planarization layer and the organic functional layer may also be from the gas phase
- this additionally comprises the method steps:
- steps F) and G) are carried out before method step E).
- a device which, by a method with the
- the second injection layer is applied in method step F) by means of a wet-chemical method.
- the second injection layer is applied in method step F) by means of a wet-chemical method.
- the second injection layer and the second planarization layer can also be deposited from the gas phase.
- FIGS 2a to d each show a schematic
- FIGS. 3 a and b each show energy schemes of the layers involved in optoelectronic organic
- FIG. 4 shows five current-voltage characteristics of
- FIGS. 5a and b show, in a comparison, the characteristic of a component according to the invention according to an embodiment compared to a component not according to the invention with a first polymer.
- Figures 6a and b show a comparison of the characteristic of a device according to the invention according to an embodiment compared with a non-inventive device with a second polymer.
- the figures la to d each show an inventive embodiment in a schematic cross section.
- the arrow 9 on the left next to the stack of layers indicates the order in which the layers are stacked on each other
- Embodiments comprises a layer sequence comprising a first electrode 1, which on its surface
- each of the first planarization layer 2 is followed by a first one compared to this thinner one
- Injection layer 3 by the appropriate choice of materials for forming a potential well in the manner described in the general part.
- the layer sequence further comprises a second electrode 5.
- Figures 2a to d each show a schematic
- Planarleiters Mrs 2 'and a second injection layer 3' include. These can be formed, for example, by the above-mentioned method steps F) and G).
- the second planarization layer 2 ' is in each case between the second electrode 5 and the second
- Injection layer 3 ' arranged.
- the second injection layer 3 ' is in each case arranged between the second planarization layer 2' and the organic functional layer 4.
- the organic functional layer 4 may be any organic functional layer 4.
- charge carrier blocking or charge carrier transporting layer or a combination thereof.
- the first and / or the second electrode 1, 5 may each independently be a sputtered, thermally evaporated or solution processed electrode.
- FIGS. 3a and 3b respectively show the energy schemes of the first planarization layer 2 of the following first
- In the upper half is the energy scheme before the contact training, and in the lower half each of the energy scheme after the contact formation of the individual
- FIG. 3 a shows the respective energy levels of the highest occupied molecular orbitals (HOMOs). From the electrode, in this case the anode, the holes 7 are discharged from the left into the first planarization layer 2. Due to the contact formation of the individual layers, a potential well has in the first injection layer 3
- HOMOs highest occupied molecular orbitals
- FIG. 3b now shows the energy levels of the lowest unoccupied molecular orbitals (LUMOs).
- electrons 8 are now injected into the first planarization layer 2 from the right of the electrode, in this case the cathode. Again, it comes through the appropriate selection of materials to form a potential well in the first injection layer 3, whereby the electrons 8 collect in this. The electrons 8 can now be released into the organic functional layer 4 from the potential well.
- FIG. 4 there are five current-voltage characteristics
- holes have the following structure: an ITO anode, a first planarization layer of 120 nm thickness, which also serves as a hole injecting layer (HIL), optionally a p-doped injection layer of 20 nm thickness, an organic functional layer of ⁇ , ⁇ '-di (naphth-1-yl) - ⁇ , ⁇ '-diphenyl-benzidine (NPB) of 100 nm thickness and an Al cathode.
- HIL hole injecting layer
- NPB p-doped injection layer of 20 nm thickness
- organic functional layer of ⁇ , ⁇ '-di (naphth-1-yl) - ⁇ , ⁇ '-diphenyl-benzidine (NPB) of 100 nm thickness
- Al cathode Al cathode.
- the components for which characteristics I and II have been included do not each include a first one
- Components and have an injection layer For the components of the characteristic curves I and III, in each case the same polymers were chosen for the first planarization layer and the first injection layer. The same applies to the components for which the characteristic curves II and IV were included. Thus, the components for which the characteristics I and III or II and IV were recorded, respectively, only by the presence or absence of the first injection layer.
- the component for which the characteristic V was recorded has no first planarization layer and no first injection layer. As can be seen from the figure, the
- Planarization layer but no injection layer have quite different, whereas the characteristics of the devices with planarization layer and injection layer in the range of 1 to 7 volts almost congruent
- FIGS. 5a and 6a are a component according to the invention, each having the following structure: an ITO anode, a first planarization layer having a thickness of 100 nm, a first injection layer having a thickness of 20 nm, an organic functional layer having a thickness of 90 nm and an Al cathode.
- FIGS. 5b and 6b have not measured components according to the invention. Their structure has been modified compared to the components according to the invention shown in FIGS. 5a and 6a, respectively, in that instead of the
- first planarization layer and first injection layer only a planarization layer was used, which has a thickness of 120 nm.
- the thickness of this planarization layer thus corresponds to the sum of the layer thicknesses in the invention
- the same polymer was used for the planarization layer. The same applies likewise to the components of FIGS. 6a and 6b.
- the two embodiments according to the invention have one Current density of about 1 mA / cm a much lower
- Range of typical operating voltage between 3V and 4V significantly improved process stability than the non-inventive devices without injection layer.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10760674.1A EP2483943B1 (de) | 2009-09-30 | 2010-09-29 | Optoelektronisches organisches bauelement und verfahren zu dessen herstellung |
US13/499,608 US8785916B2 (en) | 2009-09-30 | 2010-09-29 | Optoelectronic organic component and method for the production thereof |
JP2012531418A JP5858918B2 (ja) | 2009-09-30 | 2010-09-29 | 有機光電構成素子およびその製造方法 |
CN201080044040.6A CN102549794B (zh) | 2009-09-30 | 2010-09-29 | 有机光电子器件及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009047883A DE102009047883A1 (de) | 2009-09-30 | 2009-09-30 | Optoelektronisches organisches Bauelement und Verfahren zu dessen Herstellung |
DE102009047883.3 | 2009-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011039277A2 true WO2011039277A2 (de) | 2011-04-07 |
WO2011039277A3 WO2011039277A3 (de) | 2011-05-26 |
Family
ID=43499931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/064494 WO2011039277A2 (de) | 2009-09-30 | 2010-09-29 | Optoelektronisches organisches bauelement und verfahren zu dessen herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US8785916B2 (de) |
EP (1) | EP2483943B1 (de) |
JP (1) | JP5858918B2 (de) |
KR (1) | KR20120091119A (de) |
CN (1) | CN102549794B (de) |
DE (1) | DE102009047883A1 (de) |
WO (1) | WO2011039277A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021180332A (ja) * | 2012-04-13 | 2021-11-18 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013111739A1 (de) * | 2013-10-24 | 2015-04-30 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
TWI624094B (zh) * | 2015-11-30 | 2018-05-11 | Lg顯示器股份有限公司 | 有機發光二極體及包含該有機發光二極體的有機發光二極體顯示裝置 |
JP6815294B2 (ja) * | 2016-09-30 | 2021-01-20 | 株式会社Joled | 有機el素子、および有機elパネル |
JP2019204810A (ja) * | 2018-05-21 | 2019-11-28 | パイオニア株式会社 | 発光装置及び発光装置の製造方法 |
CN112447932B (zh) * | 2020-11-24 | 2022-11-29 | 合肥京东方卓印科技有限公司 | 一种有机电致发光显示面板及其制备方法、显示装置 |
CN112952023B (zh) * | 2021-02-20 | 2022-11-04 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3427539B2 (ja) * | 1995-02-13 | 2003-07-22 | 松下電器産業株式会社 | 有機薄膜エレクトロルミネッセンス素子 |
KR100721656B1 (ko) * | 2005-11-01 | 2007-05-23 | 주식회사 엘지화학 | 유기 전기 소자 |
EP1578174A1 (de) | 2002-12-25 | 2005-09-21 | Fujitsu Limited | Organisches elektrolumineszenzelement und organische elektrolumineszenzanzeige |
JP2004362914A (ja) | 2003-06-04 | 2004-12-24 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子及びそれを用いた表示装置 |
JP4476594B2 (ja) * | 2003-10-17 | 2010-06-09 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP4890447B2 (ja) | 2004-06-02 | 2012-03-07 | トムソン ライセンシング | ドープ有機層を有する有機発光ダイオード |
JP2006024432A (ja) * | 2004-07-07 | 2006-01-26 | Japan Science & Technology Agency | 有機エレクトロルミネッセンス素子 |
FR2878652A1 (fr) | 2004-11-29 | 2006-06-02 | Thomson Licensing Sa | Diode organique electroluminescente a couches dopees |
JP4653469B2 (ja) | 2004-12-01 | 2011-03-16 | 出光興産株式会社 | 有機電界発光素子 |
KR100798817B1 (ko) | 2006-07-28 | 2008-01-28 | 주식회사 두산 | 전계 발광 소자용 스피로 화합물, 및 이를 포함하는 전계발광 소자 |
TWI299636B (en) * | 2005-12-01 | 2008-08-01 | Au Optronics Corp | Organic light emitting diode |
JP2007234254A (ja) * | 2006-02-27 | 2007-09-13 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
TWI638583B (zh) * | 2007-09-27 | 2018-10-11 | 半導體能源研究所股份有限公司 | 發光元件,發光裝置,與電子設備 |
KR101003267B1 (ko) * | 2008-01-18 | 2010-12-21 | 주식회사 엘지화학 | 유기발광소자 및 이의 제조 방법 |
JP2008187205A (ja) * | 2008-04-28 | 2008-08-14 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子及びそれを用いた表示装置 |
KR101791937B1 (ko) * | 2011-07-14 | 2017-11-02 | 삼성전자 주식회사 | 광전자소자 |
-
2009
- 2009-09-30 DE DE102009047883A patent/DE102009047883A1/de not_active Withdrawn
-
2010
- 2010-09-29 EP EP10760674.1A patent/EP2483943B1/de not_active Not-in-force
- 2010-09-29 JP JP2012531418A patent/JP5858918B2/ja not_active Expired - Fee Related
- 2010-09-29 WO PCT/EP2010/064494 patent/WO2011039277A2/de active Application Filing
- 2010-09-29 US US13/499,608 patent/US8785916B2/en not_active Expired - Fee Related
- 2010-09-29 CN CN201080044040.6A patent/CN102549794B/zh not_active Expired - Fee Related
- 2010-09-29 KR KR1020127010569A patent/KR20120091119A/ko not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
None |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021180332A (ja) * | 2012-04-13 | 2021-11-18 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2483943B1 (de) | 2015-11-04 |
US8785916B2 (en) | 2014-07-22 |
JP5858918B2 (ja) | 2016-02-10 |
CN102549794B (zh) | 2015-09-23 |
JP2013506949A (ja) | 2013-02-28 |
KR20120091119A (ko) | 2012-08-17 |
EP2483943A2 (de) | 2012-08-08 |
US20120241729A1 (en) | 2012-09-27 |
DE102009047883A1 (de) | 2011-03-31 |
WO2011039277A3 (de) | 2011-05-26 |
CN102549794A (zh) | 2012-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1806795B1 (de) | Organisches Bauelement | |
DE112007000135B4 (de) | Elektrolumineszente Lichtemissionseinrichtung mit einer Anordnung organischer Schichten und Verfahren zum Herstellen | |
EP2284923B1 (de) | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen | |
DE10058578C2 (de) | Lichtemittierendes Bauelement mit organischen Schichten | |
EP2483943B1 (de) | Optoelektronisches organisches bauelement und verfahren zu dessen herstellung | |
EP2158625B1 (de) | Verwendung eines metallkomplexes als p-dotand für ein organisches halbleitendes matrixmaterial, organisches halbleitermaterial und organische leuchtdioden | |
DE102013017361B4 (de) | Organisches Licht emittierendes Bauelement und Verfahren zur Herstellung eines organischen Licht ermittierenden Bauelements | |
EP1511094A2 (de) | Licht emittierendes Bauelement und Verfahren zu seiner Herstellung | |
WO2008077615A1 (de) | Elektronisches bauelement mit mindestens einer organischen schichtanordnung | |
WO2009049861A1 (de) | Organisches elektrolumineszentes bauelement | |
EP2656412A1 (de) | Organisches halbleiterbauelement mit dotierter lochleiterschicht | |
WO2007121877A1 (de) | Lichtemittierendes bauelement | |
DE102009013685B4 (de) | Verwendung einer organischen Diode als organische Zenerdiode und Verfahren zum Betreiben | |
WO2008154915A1 (de) | Verwendung eines metallkomplexes als p-dotand für ein organisches halbleitendes matrixmaterial, organisches halbleitermaterial und elektronisches bauteil | |
WO2008125100A1 (de) | Organisches elektronisches speicherbauelement, speicherbauelementanordnung und verfahren zum betreiben eines organischen elektronischen speicherbauelementes | |
DE102017111425A1 (de) | Organisches elektronisches Bauelement und Verfahren zur Herstellung eines organischen elektronischen Bauelements | |
DE102015102371B4 (de) | Organisches Licht emittierendes Bauelement | |
DE102016101710A1 (de) | OLED und Verfahren zur Herstellung einer OLED | |
DE102007033209A1 (de) | Bauelement zur phosphoreszenten Lichtemisssion aus Triplett-Zuständen und Verfahren zur Herstellung solcher Bauelemente | |
WO2016150687A1 (de) | Verfahren zur herstellung einer organischen ladungsträgererzeugungsschicht und eines organischen licht emittierenden bauelements mit einer organischen ladungsträgererzeugungsschicht | |
DE20320925U1 (de) | OLED-Bauelement und Display auf Basis von OLED-Bauelementen mit verbesserter Effizienz |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080044040.6 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10760674 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010760674 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012531418 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20127010569 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13499608 Country of ref document: US |