WO2011021690A1 - 互いに絶縁された金属性の電源側およびグランド側補強部材を有する半導体装置 - Google Patents
互いに絶縁された金属性の電源側およびグランド側補強部材を有する半導体装置 Download PDFInfo
- Publication number
- WO2011021690A1 WO2011021690A1 PCT/JP2010/064075 JP2010064075W WO2011021690A1 WO 2011021690 A1 WO2011021690 A1 WO 2011021690A1 JP 2010064075 W JP2010064075 W JP 2010064075W WO 2011021690 A1 WO2011021690 A1 WO 2011021690A1
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- WIPO (PCT)
- Prior art keywords
- reinforcing member
- power supply
- side reinforcing
- ground
- wiring board
- Prior art date
Links
- 230000003014 reinforcing effect Effects 0.000 title claims abstract description 222
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 230000002787 reinforcement Effects 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 description 31
- 230000001070 adhesive effect Effects 0.000 description 30
- 229910000679 solder Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Definitions
- the present invention relates to a semiconductor device in which a semiconductor chip is mounted on a wiring board.
- an LSI is flip-chip connected to the main surface of the wiring board (corresponding to the first surface of the present invention), and the opposite side of the main surface of the wiring board is connected.
- a plate material such as alumina ceramics or zirconia having a linear expansion coefficient smaller than that of the wiring substrate and close to LSI is bonded.
- a support plate is bonded to the first main surface (corresponding to the second surface of the present invention) of the organic wiring substrate (corresponding to the wiring substrate of the present invention), and the organic wiring substrate A semiconductor chip is connected to a second main surface opposite to the first main surface (corresponding to the first surface of the present invention).
- a metal plate (reinforcing member) made of copper, copper tungsten or the like having a linear expansion coefficient close to that of the semiconductor chip is used.
- the support plate is provided with a thin layer portion and a rib skeleton structure, which is a beam-like skeleton structure that supports the thin layer portion across the length and breadth, on the surface opposite to the side to which the organic wiring board is bonded. ing.
- the semiconductor device configured as described above is intended to improve heat dissipation and reduce warpage by increasing the surface area of the support plate with a rib skeleton structure.
- a metal circuit board semiconductor chip
- a metal heat radiating plate formed thicker than the metal circuit board is formed on the other surface (corresponding to the second surface of the present invention).
- the metal heat radiating plate is formed with slits in the thickness direction. It is said that heat dissipation efficiency and durability can be improved by configuring the semiconductor module in this way.
- Patent Document 1 to Patent Document 3 when a power supply pad and a ground pad for supplying power to the semiconductor device are provided, in order to configure the entire device in a compact manner, A semiconductor chip is attached to one surface, and a power supply pad and a ground pad are provided on the second surface opposite to the first surface. Furthermore, in order to reduce the warpage of the semiconductor device, it is required to attach a reinforcing member having a width of about the first surface, but if it is attached to the first surface side, it interferes with the semiconductor chip, It is considered to attach the reinforcing member to the second surface side.
- the reinforcing member is formed of a metal material, the warpage of the semiconductor device can be reduced and the heat dissipation can be improved. There is a problem that both the power supply pad and the ground pad are connected to the reinforcing member and the two pads are short-circuited.
- the reinforcing member is formed of a ceramic material to prevent a short circuit between the power supply pad and the ground pad, both pads are covered with an insulating reinforcing member, and it is difficult to extend the electric circuit from both pads. Since the ceramic material has a lower thermal conductivity than the metal material, the heat radiation from the power supply pad and the ground pad is reduced.
- the present invention has been made in view of such problems, and while preventing warpage of a semiconductor chip, the power supply pad and the ground pad provided on the wiring board are prevented from being short-circuited, and the power supply pad and the ground pad are also provided.
- An object of the present invention is to provide a semiconductor device capable of easily extending an electric circuit.
- the present invention provides a wiring board, a semiconductor chip fixed on the first surface of the wiring board, and a second surface opposite to the first surface of the wiring substrate.
- a power supply pad provided on the wiring board for supplying power to the wiring board, a ground pad provided on the second surface of the wiring board for grounding the wiring board, and connected to the power supply pad
- a semiconductor device comprising: a metal power-side reinforcing member; a metal ground-side reinforcing member connected to the ground pad; and an insulating portion that insulates the power-side reinforcing member and the ground-side reinforcing member.
- the power supply side reinforcing member and the ground side reinforcing member are insulated by the insulating portion, the power supply side reinforcing member is connected to the power supply pad, and the ground side reinforcing member is connected to the ground pad. .
- the warp of the semiconductor chip fixed on the wiring board can be suppressed by the power supply side reinforcing member and the ground side reinforcing member while maintaining the insulation between the power supply pad and the ground pad.
- the power supply side reinforcing member and the ground side reinforcing member are made of metal, the electric circuits extending to the power supply pad and the ground pad are extended to the power supply side reinforcing member and the ground side reinforcing member, respectively. Therefore, by connecting an electronic component such as a capacitor to these reinforcing members, the capacitor can be easily electrically connected to the wiring board through the power supply side reinforcing member or the ground side reinforcing member.
- FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. It is principal part sectional drawing of FIG. It is a bottom view of the wiring board of the same semiconductor device. It is a bottom view of the semiconductor device.
- FIG. 22 is an explanatory diagram illustrating a method of assembling the semiconductor device. Similarly, it is explanatory drawing which shows the assembly method of the same semiconductor device. It is principal part sectional drawing of the semiconductor device of 2nd Embodiment of this invention. It is a bottom view of the semiconductor device. It is principal part sectional drawing of the semiconductor device of 3rd Embodiment of this invention. It is a bottom view of the semiconductor device. It is principal part sectional drawing of the semiconductor device of 4th Embodiment of this invention. It is a bottom view of the semiconductor device. It is a bottom view of the wiring board of the same semiconductor device.
- the semiconductor device 1 of this embodiment includes a wiring board 2 formed in a flat plate shape, and an LSI (first surface) 2 a of the wiring board 2 fixed on the LSI (first surface).
- Semiconductor chip 3 power supply pad 4 and ground pad 5 provided on back surface (second surface) 2 b opposite to main surface 2 a of wiring substrate 2, and power supply side reinforcement for reinforcing wiring substrate 2 It comprises a member 6 and a ground side reinforcing member 7, and an insulating adhesive (insulating part, insulating member) 8 that connects the power source side reinforcing member 6 and the ground side reinforcing member 7.
- the wiring board 2 is formed by laminating a power supply layer, a ground layer, a signal layer, etc. (not shown).
- the LSI 3 is mainly formed of silicon, and is connected to the main surface 2 a of the wiring board 2 by solder balls 11.
- a power supply pad 4 and a ground pad 5 are formed on the back surface 2 b of the wiring board 2 so as to have a substantially square shape in plan view.
- the power supply pad 4 and the ground pad 5 are arranged so as to be separated from each other by a predetermined distance and to have parallel sides.
- the power supply pad 4 and the ground pad 5 are insulated by the wiring board 2.
- the power pad 4 is for supplying power to the LSI 3 and the like through the wiring board 2, and the ground pad 5 is for grounding the wiring board 2.
- the shape and arrangement of the power supply pad 4 and the ground pad 5 are not limited to this, and the power supply pad and the ground pad may be arranged in a state where they are insulated from each other by a predetermined distance on the back surface 2b of the wiring board 2.
- the power supply side reinforcing member 6 and the ground side reinforcing member 7 are made of metal such as copper tungsten alloy, for example.
- the linear expansion coefficients of the power supply side reinforcing member 6 and the ground side reinforcing member 7 are 9.0 * 10 including 2.4 * 10 ⁇ -6 > (1 / [deg.] C.) which is the linear expansion coefficient of silicon which is the main material of the LSI 3. -6 (1 / ° C) or less is preferable.
- the silicon forming the LSI 3 has a longitudinal elastic modulus of about 170 GPa, but the power supply side reinforcing member 6 and the ground side reinforcing member 7 are made of metal having a longitudinal elastic modulus of about 170 GPa or more.
- the ground side reinforcing member 7 is formed in a rectangular shape in plan view.
- the power supply side reinforcing member 6 has a plate shape that is slightly smaller than the wiring board 2 in plan view.
- the power supply side reinforcing member 6 is formed with a hole 6a set to a dimension that allows a certain clearance to be arranged around the ground side reinforcing member 7 when the ground side reinforcing member 7 is arranged therein. Yes.
- the aforementioned insulating adhesive 8 made of an insulating epoxy resin or the like is disposed.
- the power supply side reinforcing member 6, the ground side reinforcing member 7, and the insulating adhesive 8 together constitute a reinforcing plate 12.
- the power supply side reinforcing member 6 and the ground side reinforcing member 7 are respectively connected to the power supply pad 4 and the ground pad 5 by a conductive bonding member 13 such as solder. At this time, the bonding member 13 connected to the power supply pad 4 and the bonding member 13 connected to the ground pad 5 are arranged not to contact each other so that the power supply pad 4 and the ground pad 5 are not short-circuited by the bonding member 13. Yes.
- the power supply side reinforcing member 6 is provided with a connector (connection portion) 14 to which a power supply terminal (not shown) can be attached and detached.
- the LSI 3 is mounted on the main surface 2 a of the wiring board 2 in a high-temperature environment in which the solder ball 11 has a melting point temperature or higher.
- the wiring board 2, LSI 3 and the like are heated to, for example, 220 ° C. to 260 ° C.
- the ground side reinforcing member 7 is disposed in the hole 6 a of the power supply side reinforcing member 6, and the inner peripheral surface of the hole 6 a and the outer peripheral surface of the ground side reinforcing member 7 are insulatively bonded.
- the reinforcing plate 12 is formed by bonding with the agent 8. Then, the reinforcing plate 12 is mounted on the back surface 2b of the wiring board 2 with solder, a thermosetting adhesive, or the like in a state where the LSI 3 and the wiring board 2 are warped back, with the atmosphere set to the melting point temperature of the solder ball 11 or lower. .
- the mounting method of the LSI 3 and the reinforcing plate 12 is not limited to this, and the LSI 3 and the reinforcing plate 12 may be mounted on the wiring board 2 at a time in an environment equal to or higher than the melting temperature of the solder ball 11. Subsequently, the connector 14 is attached to the power supply side reinforcing member 6 by solder or the like (not shown).
- the LSI 3 is fixed to the main surface 2a of the wiring board 2 with the solder balls 11, and the power supply side reinforcing member 6 and the ground side reinforcing member 7 are insulated.
- the reinforcing plate 12 is formed by bonding with the member 8.
- the power supply side reinforcing member 6 and the ground side reinforcing member 7 are connected to the power supply pad 4 and the ground pad 5 on the back surface 2b of the wiring board 2 by the bonding member 13, respectively.
- the LSI 3 can be prevented from warping in a convex shape due to a temperature difference of about 220 ° C. from the temperature in the reflow process to room temperature.
- the LSI 3 is fixed on the main surface 2a of the wiring board 2 and the power supply pad 4 and the ground pad 5 are provided on the back surface 2b, so that the LSI 3, the power supply pad 4 and the ground pad 5 are compactly arranged on the wiring board 2. can do. Further, the heat of the wiring board 2 can be effectively released through the power supply side reinforcing member 6 and the ground side reinforcing member 7 which are generally made of metal having higher thermal conductivity than other solids such as resin. .
- An insulating adhesive 8 is disposed between the power supply side reinforcing member 6 and the ground side reinforcing member 7 to connect the power supply side reinforcing member 6 and the ground side reinforcing member 7. Therefore, it is possible to reliably prevent the power supply pad 4 and the ground pad 5 from being short-circuited due to the contact between the power supply side reinforcing member 6 and the ground side reinforcing member 7. Furthermore, the warp of the LSI 3 can be further suppressed by connecting the power-side reinforcing member 6 and the ground-side reinforcing member 7 with a predetermined strength by the insulating adhesive 8.
- the metal having a longitudinal elastic modulus of about 170 GPa or more is used for the power supply side reinforcing member 6 and the ground side reinforcing member 7, the rigidity of the power supply side reinforcing member 6 and the ground side reinforcing member 7 with respect to the wiring board 2 is used. And warping of the LSI 3 can be further suppressed.
- the power supply side reinforcing member 6 is provided with the connector 14, the power supply side reinforcing member 6 is connected to the power supply side for supplying power to the LSI 3 and the wiring board 2 by attaching a power supply terminal to the connector 14. It can be used as a terminal.
- the reinforcing members 6 and 7 can serve as power supply and ground terminals, an electronic component such as a capacitor can be mounted between the reinforcing members 6 and 7.
- the semiconductor device 21 of the present embodiment includes a reinforcing plate 22 instead of the reinforcing plate 12 of the semiconductor device 1 of the first embodiment.
- the reinforcing plate 22 is disposed at a position between the reinforcing members 23 and 24 and the power-side reinforcing member 23 and the ground-side reinforcing member 24 that are formed in substantially the same shape, and an insulating member that connects the reinforcing members 23 and 24.
- Adhesive 25 (insulating portion, insulating member).
- the power supply side reinforcing member 23 and the ground side reinforcing member 24 are respectively formed with a power supply side facing surface 26 and a ground side facing surface 27.
- the power supply side reinforcing member 23 and the ground side reinforcing member 24 are arranged such that the power supply side facing surface 26 and the ground side facing surface 27 face each other.
- the ground-side facing surface 27 is provided with a comb-shaped portion 28 having two convex portions 28a and 28b projecting toward the power-side facing surface 26.
- the power-side facing surface 26 has the two convex portions 28a, A comb-shaped portion 29 in which two concave portions are formed on 28b to be engaged with the insulating adhesive 25 therebetween is provided.
- the comb-shaped portions 28 and 29 are provided over the entire depth direction (direction perpendicular to the paper surface) of the reinforcing members 23 and 24 in FIG.
- the power supply side reinforcing member 23 and the ground side reinforcing member 24 are formed of the same material as the reinforcing members 6 and 7 described above, and the insulating adhesive 25 is formed of the same material as that of the insulating adhesive 8 described above.
- the power supply side reinforcing member 23 and the ground side reinforcing member 24 are connected to the power supply pad 4 and the ground pad 5 by the bonding member 13, respectively. At this time, the bonding member 13 is arranged so that the power supply pad 4 and the ground pad 5 are not short-circuited by the bonding member 13.
- the LSI 3 is mounted on the main surface 2a of the wiring board 2 under a high temperature environment in which the solder ball 11 is equal to or higher than the melting temperature. Thereafter, the comb-shaped portion 29 of the power-side reinforcing member 23 and the comb-shaped portion 28 of the ground-side reinforcing member 24 are connected by the insulating adhesive 25 to form the reinforcing plate 22. Then, with the atmosphere set to the melting point temperature of the solder balls 11 or less and the warpage between the LSI 3 and the wiring board 2 returned, the reinforcing plate 22 is attached to the wiring board 2 with solder or a thermosetting and conductive adhesive.
- the mounting method of the LSI 3 and the reinforcing plate 22 is not limited to this, and the LSI 3 and the reinforcing plate 22 may be mounted on the wiring board 2 at a time in an environment equal to or higher than the melting temperature of the solder ball 11.
- the power supply pad 4 provided on the wiring board 2 while including the reinforcing members 23 and 24 for suppressing the warpage of the LSI 3, as in the first embodiment.
- a short circuit with the ground pad 5 can be prevented, and an electric circuit can be easily extended from the power supply pad 4 and the ground pad 5.
- the ground side reinforcing member 24 is provided with a comb-shaped portion 28 having two convex portions 28a and 28b, and the power source side reinforcing member 23 is formed with two concave portions engaging with the two convex portions 28a and 28b.
- the comb-shaped portion 29 is provided, the surface area for bonding the power-side reinforcing member 23 and the ground-side reinforcing member 24 is increased. Therefore, the strength at which the power-side reinforcing member 23 and the ground-side reinforcing member 24 are connected by the insulating adhesive 25 can be increased, and the LSI 3 can be more reliably prevented from warping.
- either the power-side reinforcing member 23 or the ground-side reinforcing member 24 is always present in the thickness direction of the reinforcing plate 22, so that the strength of the reinforcing plate 22 is increased. be able to.
- the two convex portions 28 a and 28 b are provided on the comb-shaped portion 28 of the ground side reinforcing member 24.
- the number of convex portions provided in the comb-shaped portion 28 is not limited to this, and may be any number as long as it is one or more.
- the comb-shaped portion of the power supply side reinforcing member 23 is formed with a number of concave portions corresponding to the number of convex portions provided on the comb-shaped portion of the ground-side reinforcing member 24.
- a convex portion may be formed on the power-side facing surface 26 of the power-side reinforcing member 23, and a concave portion that engages with the convex portion may be provided on the ground-side facing surface 27 of the ground-side reinforcing member 24.
- the semiconductor device 31 of this embodiment includes a reinforcing plate 32 in place of the reinforcing plate 12 of the semiconductor device 1 of the above embodiment.
- the reinforcing plate 32 includes a power source side reinforcing member 33 formed in a plate shape, a ground side reinforcing member 34 formed in a substantially L shape in a side view so as to engage with the power source side reinforcing member 33, and the reinforcing member 33. , 34 and an insulating adhesive (insulating portion, insulating member) 35 that connects the reinforcing members 33, 34.
- the bottom surface (first reference surface) 33a and the side surface (second reference surface) 33b, which are surfaces orthogonal to each other, of the power supply side reinforcing member 33 are the surface (first opposing surface) 34a and the surface (second surface) of the ground side reinforcing member 34.
- (Opposing surfaces) 34b are arranged to face each other.
- the bottom surface 33a and the surface 34a, and the side surface 33b and the surface 34b are connected to each other with the insulating adhesive 35 interposed therebetween.
- the power supply side reinforcing member 33 and the ground side reinforcing member 34 are formed of the same material as the above reinforcing members 6 and 7, and the insulating adhesive 35 is formed of the same material as the above insulating adhesive 8.
- the power supply side reinforcing member 33 and the ground side reinforcing member 34 are connected to the power supply pad 4 and the ground pad 5 by the bonding member 13, respectively. At this time, the bonding member 13 is arranged so that the power supply pad 4 and the ground pad 5 are not short-circuited by the bonding member 13.
- the LSI 3 is mounted on the main surface 2a of the wiring board 2 under a high temperature environment in which the solder ball 11 is equal to or higher than the melting temperature. Thereafter, the bottom surface 33a of the power supply side reinforcing member 33 and the surface 34a of the ground side reinforcing member 34, and the side surface 33b of the power supply side reinforcing member 33 and the surface 34b of the ground side reinforcing member 34 are connected with the insulating adhesive 35, respectively.
- a reinforcing plate 32 is formed.
- the reinforcing plate 32 is mounted on the wiring board 2 with solder, a thermosetting adhesive, or the like in a state in which the atmosphere is set to the melting point temperature of the solder ball 11 or less and the warp between the LSI 3 and the wiring board 2 has returned.
- the mounting method of the LSI 3 and the reinforcing plate 32 is not limited to this, and the LSI 3 and the reinforcing plate 32 may be mounted on the wiring board 2 at a time in an environment equal to or higher than the melting temperature of the solder ball 11.
- a short circuit between the power supply pad 4 and the ground pad 5 provided on the wiring board 2 is suppressed while suppressing the warpage of the LSI 3.
- the electric circuit can be easily extended from the power supply pad 4 and the ground pad 5.
- the power supply side reinforcing member 33 and the ground side reinforcing member 34 are connected in two directions orthogonal to each other, the surface area for bonding the power supply side reinforcing member 33 and the ground side reinforcing member 34 is increased. Therefore, the strength at which the power supply side reinforcing member 33 and the ground side reinforcing member 34 are connected by the insulating adhesive 35 can be increased, and the warpage of the LSI 3 can be more reliably suppressed.
- the ground side reinforcing member 34 is disposed below the reinforcing plate 32, for example, it can be suitably used when many electronic components are connected to the ground side from the power source side.
- the ground side reinforcing member may be formed in a plate shape, and may be formed in an L shape in a side view so that the power side reinforcing member is engaged with the ground side reinforcing member.
- the semiconductor device 41 of this embodiment includes a wiring substrate 42 and a reinforcing plate 43 instead of the wiring substrate 2 and the reinforcing plate 12 of the semiconductor device 1 of the above embodiment. .
- the wiring substrate 42 is formed in a flat plate shape, and two power pads 44 and 45 and two ground pads 46 and 47 formed in a substantially square shape in plan view are provided on the back surface 2b. It has been.
- the power supply pads 44 and 45 and the ground pads 46 and 47 are arranged in a grid pattern with a predetermined distance therebetween so that corresponding sides are parallel to each other.
- the power pads 44 and 45 and the ground pads 46 and 47 are arranged on the diagonal lines of the lattice.
- the number, shape, and arrangement of the power supply pads and ground pads are not limited to this, and the power supply pads and the ground pads may be arranged in a state where they are insulated from each other by a predetermined distance on the back surface 2b of the wiring board 42.
- the reinforcing plate 43 includes two power-side reinforcing members 50 and 51 and two ground-side reinforcing members 52 and 53 that are formed in substantially the same shape, and the reinforcing member 50. And an insulating adhesive 54 for connecting the reinforcing members 50 to 53.
- the reinforcing members 50 to 53 are arranged in a grid pattern with a predetermined distance therebetween so that the corresponding sides are parallel to each other.
- the power supply side reinforcement members 50 and 51 and the ground side reinforcement members 52 and 53 are arrange
- the power supply side reinforcing member 50 and the ground side reinforcing member 53 have a power supply side facing surface 50a and a ground side facing surface 53a, respectively.
- the power supply side reinforcing member 50 and the ground side reinforcing member 53 are arranged so that the power supply side facing surface 50a and the ground side facing surface 53a face each other.
- a comb-shaped portion 50b and a comb-shaped portion 53b that are engaged with each other are formed on the power-side facing surface 50a and the ground-side facing surface 53a, respectively.
- a comb-shaped portion (not shown) is also similar between the adjacent power supply side reinforcing member 50 and ground side reinforcing member 52, between the power supply side reinforcing member 51 and ground side reinforcing member 52, and between the power supply side reinforcing member 51 and ground side reinforcing member 53. Is formed. A constant gap is formed between the comb-shaped portions engaged with each other, and an insulating adhesive 54 is disposed in this gap. As described above, the reinforcing members 50 to 53 are connected by the insulating adhesive 54.
- the power-side reinforcing members 50 and 51 and the ground-side reinforcing members 52 and 53 are made of the same material as the reinforcing members 6 and 7, and the insulating adhesive 54 is made of the same material as the insulating adhesive 8. Is formed.
- the power supply side reinforcing member 50 is connected to the power supply pad 44
- the power supply side reinforcing member 51 is connected to the power supply pad 45
- the ground side reinforcing member 52 is connected to the ground pad 46
- the ground side reinforcing member 53 is connected to the ground pad 47.
- the joining member 13 is disposed so that the power supply side reinforcing members 50 and 51 and the ground side reinforcing members 52 and 53 are not short-circuited by the joining member 13.
- the LSI 3 is mounted on the main surface 2a of the wiring board 42 in a high temperature environment in which the solder ball 11 is equal to or higher than the melting point temperature. Thereafter, the power supply side reinforcing members 50 and 51 and the ground side reinforcing members 52 and 53 are connected to each other with an insulating adhesive 54 to form the reinforcing plate 43. Then, the atmosphere is set to the melting point temperature of the solder ball 11 or less, and the reinforcing plate 43 is mounted on the wiring board 42 with solder, a thermosetting adhesive or the like in a state where the warpage of the LSI 3 and the wiring board 42 has returned.
- the mounting method of the LSI 3 and the reinforcing plate 43 is not limited to this, and the LSI 3 and the reinforcing plate 43 may be mounted on the wiring board 42 at a time in an environment equal to or higher than the melting temperature of the solder ball 11.
- the semiconductor device 41 of this embodiment it is possible to prevent a short circuit between the power supply pads 44 and 45 and the ground pads 46 and 47 provided on the wiring board 42 while suppressing the warpage of the LSI 3. Furthermore, even when a large number of power supply pads and ground pads are provided on the wiring board, the semiconductor device 41 can be provided with a reinforcing member while being compactly configured.
- one of the power supply side reinforcing member and the ground side reinforcing member is formed in a plate shape as in the above embodiment, and the other is formed in an L shape in a side view, and insulative between them. Connection may be made with an adhesive interposed therebetween.
- the concrete structure is not restricted to this embodiment, The structure of the range which does not deviate from the summary of this invention Changes are also included.
- the power supply side reinforcing member and the ground side reinforcing member are connected to each other by an insulating adhesive.
- an air layer may be provided between the power supply side reinforcing member and the ground side reinforcing member without providing the insulating adhesive to insulate the two reinforcing members from each other.
- the semiconductor device of the present invention it is possible to suppress the warp of the semiconductor chip fixed on the wiring board by the power supply side reinforcing member and the ground side reinforcing member while maintaining the insulation between the power supply pad and the ground pad. it can.
- the electric circuit extending to the power pad and the ground pad is respectively extended to the power-side reinforcing member and the ground-side reinforcing member formed of metal, and by connecting electronic components such as a capacitor to these reinforcing members, The capacitor can be easily electrically connected to the wiring board through the power supply side reinforcing member or the ground side reinforcing member.
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Abstract
Description
本願は、2009年8月20日に出願された特願2009-190962号に基づき優先権を主張し、その内容をここに援用する。
この場合、LSI(半導体チップ)に比べて線膨張率が大きい配線基板に、半田ボールなどを用いてリフローなどによってLSIを接続すると、リフロー後の冷却の際に、LSIと配線基板との線膨張率の差に起因する熱応力の影響を受けて、LSIが凸形状に反りやすくなる。その結果、半田接続部の接続不良や、LSI上面にヒートシンクを設けた場合に、LSIの反りに起因する放熱性能の低下などの問題が生じていた。
このように構成することで、配線基板は、自身より線膨張率が小さいLSIと板材とに挟まれることになり、配線基板に反りを発生しようとする力は抑制され、配線基板に生じる反りをほぼゼロに近い状態に抑えることができるとされる。
支持板には、半導体チップの線膨張率に近い線膨張率を有する銅や銅タングステン等から成る金属板(補強部材)が用いられる。そして支持板において、有機配線基板が接着された側と反対側の面には、薄層部分と、この薄層部分を縦横に横切って支える梁状の骨格構造であるリブ骨格構造とが設けられている。このように構成された半導体装置は、リブ骨格構造により支持板の表面積を増やすことで、放熱性の向上と反りの低減を図るとされる。
半導体モジュールをこのように構成することで、放熱効率と耐久性を向上させることができるという。
さらに、半導体装置の反りを低減させるために、ほぼ第一の面程度の広さを有する補強部材を取り付けることが求められるが、第一の面側に取り付けると半導体チップに干渉してしまうので、補強部材を第二の面側に取り付けることが検討されている。
また、電源パッドとグランドパッドとの短絡を防止するために補強部材をセラミックス材料で形成すると、両パッドが絶縁性の補強部材で覆われて両パッドからそれぞれ電気回路を延長し難くなるだけでなく、セラミックス材料は金属材料に比べて熱伝導率が小さいので、電源パッドとグランドパッドとからの放熱量が低下してしまう。
これにより、電源パッドとグランドパッドとの間の絶縁を保ちながらも、電源側補強部材とグランド側補強部材により、配線基板上に固定された半導体チップの反りを抑えることができる。
また、電源側補強部材とグランド側補強部材はそれぞれ金属で形成されているので、電源パッドとグランドパッドまで延びた電気回路が、電源側補強部材とグランド側補強部材までそれぞれ延長される。したがって、これらの補強部材に例えばコンデンサ等の電子部品を接続することにより、コンデンサを電源側補強部材又はグランド側補強部材を通して配線基板と容易に電気的に接続することができる。
以下、本発明に係る半導体装置の第1実施形態を、図1から図6を参照しながら説明する。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の厚さや寸法の比率は、実際のものとは適宜異ならせてある。
図1及び図2に示すように、本実施形態の半導体装置1は、平板状に形成された配線基板2と、配線基板2の主面(第一の面)2a上に固定されたLSI(半導体チップ)3と、配線基板2の主面2aの反対側の裏面(第二の面)2b上に設けられた電源パッド4及びグランドパッド5と、配線基板2を補強するための電源側補強部材6及びグランド側補強部材7と、電源側補強部材6とグランド側補強部材7を接続する絶縁性接着剤(絶縁部、絶縁部材)8とを備えて構成されている。
LSI3は主にシリコンで形成され、配線基板2の主面2a上に半田ボール11により接続されている。
図3に示すように、配線基板2の裏面2bには、平面視でほぼ正方形の形状になるように形成された電源パッド4とグランドパッド5が設けられている。
電源パッド4とグランドパッド5は、所定距離離間するとともに互いの一辺が平行になるように配置されている。電源パッド4とグランドパッド5は、配線基板2により絶縁されている。電源パッド4は配線基板2を通してLSI3等に電力を供給するためのものであり、グランドパッド5は配線基板2を接地するためのものである。
なお、電源パッド4とグランドパッド5の形状や配置はこの限りではなく、電源パッドとグランドパッドが配線基板2の裏面2bで所定距離離間して絶縁した状態で配置されていれば良い。
そして、LSI3を形成するシリコンの縦弾性係数は約170GPaであるが、電源側補強部材6及びグランド側補強部材7には縦弾性係数が約170GPa以上の金属が用いられている。
電源側補強部材6は、平面視で配線基板2よりわずかに小さい程度の板状になっている。電源側補強部材6には、内部にグランド側補強部材7を配置させたときにグランド側補強部材7の周囲に一定の隙間を確保して配置できる寸法に設定された孔部6aが形成されている。
そして、この隙間に、絶縁性のエポキシ樹脂等からなる前述の絶縁性接着剤8が配置されている。これら電源側補強部材6、グランド側補強部材7、及び絶縁性接着剤8が一体となって補強板12を構成する。
電源側補強部材6とグランド側補強部材7は、それぞれ電源パッド4とグランドパッド5に例えば半田等の導電性の接合部材13により接続されている。
このとき、接合部材13で電源パッド4とグランドパッド5が短絡しないように、電源パッド4に接続された接合部材13とグランドパッド5に接続された接合部材13とが接触しないように配置されている。
そして、本実施形態では、電源側補強部材6には、不図示の電源の端子を着脱可能なコネクタ(接続部)14が設けられている。
まず、図5のように、リフロー工程において、半田ボール11が融点温度以上となるような高温環境下でLSI3を配線基板2の主面2a上に実装する。
なお、リフロー工程では、配線基板2やLSI3等は、例えば220℃~260℃に加熱される。
その後、図6に示すように、電源側補強部材6の孔部6a内にグランド側補強部材7を配置して、孔部6aの内周面とグランド側補強部材7の外周面を絶縁性接着剤8により接着して、補強板12を形成する。
そして、雰囲気を半田ボール11の融点温度以下にして、LSI3と配線基板2の反りが戻った状態で、補強板12を半田や熱硬化性の接着剤等によって配線基板2の裏面2bに実装する。
なお、LSI3及び補強板12の実装方法はこの限りでなく、半田ボール11の融点温度以上の環境下において、LSI3と補強板12を一度に配線基板2に実装しても良い。
続いて、電源側補強部材6にコネクタ14を不図示の半田等により取り付ける。
これにより、リフロー工程での温度から常温までの220℃程度の温度差によってLSI3が凸状に反るのを抑えることができる。
また、配線基板2の主面2a上ににLSI3を固定し、裏面2bに電源パッド4とグランドパッド5を設けることで、配線基板2上にLSI3、電源パッド4及びグランドパッド5をコンパクトに配置することができる。
また、配線基板2の熱を、樹脂等の他の固体に比べて一般的に熱伝導率の大きな金属製の電源側補強部材6とグランド側補強部材7を通して、効果的に放出させることができる。
さらに、絶縁性接着剤8により電源側補強部材6とグランド側補強部材7を所定の強度で接続することで、LSI3の反りをより抑えることができる。
また、電源側補強部材6及びグランド側補強部材7には縦弾性係数が約170GPa以上の金属が用いられているので、配線基板2に対して電源側補強部材6とグランド側補強部材7の剛性を高め、LSI3の反りをさらに抑えることができる。
また、各補強部材6、7が、それぞれ電源及びグランドの端子となり得るので、各補強部材6、7間にコンデンサなどの電子部品の搭載が可能となる。
次に、本発明の第2実施形態について説明するが、前述の第1実施形態と同一の部位には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。
図7及び図8に示すように、本実施形態の半導体装置21は、上記第1実施形態の半導体装置1の補強板12に代えて、補強板22を備えている。
補強板22は、互いにほぼ同形状の板状に形成された電源側補強部材23及びグランド側補強部材24と、補強部材23、24に挟まれる位置に配置され補強部材23、24を接続する絶縁性接着剤(絶縁部、絶縁部材)25とを有している。
グランド側対向面27には、電源側対向面26に向けて突出する2つの凸部28a、28bを有する櫛形形状部28が設けられ、電源側対向面26には、それら2つの凸部28a、28bに絶縁性接着剤25を間に挟んで係合する2つの凹部が形成された櫛形形状部29が設けられている。
なお、櫛形形状部28、29は、補強部材23、24の図7における奥行き方向(紙面に垂直な方向)の全体にわたり設けられている。
電源側補強部材23とグランド側補強部材24は、上記の補強部材6、7と同じ材料で形成され、絶縁性接着剤25は、上記の絶縁性接着剤8と同じ材料で形成されている。
電源側補強部材23とグランド側補強部材24は、電源パッド4とグランドパッド5に、接合部材13によりそれぞれ接続されている。このとき、接合部材13で電源パッド4とグランドパッド5が短絡しないように、接合部材13が配置されている。
まず、リフロー工程において、半田ボール11が融点温度以上となるような高温環境下でLSI3を配線基板2の主面2aに実装する。
その後、電源側補強部材23の櫛形形状部29と、グランド側補強部材24の櫛形形状部28とを、絶縁性接着剤25で接続して補強板22を形成する。
そして、雰囲気を半田ボール11の融点温度以下にして、LSI3と配線基板2の反りが戻った状態で、補強板22を、半田や熱硬化性と導電性を有する接着剤等によって配線基板2に実装する。
なお、LSI3及び補強板22の実装方法はこの限りでなく、半田ボール11の融点温度以上の環境下において、LSI3と補強板22を一度に配線基板2に実装しても良い。
さらに、グランド側補強部材24には2つの凸部28a、28bを有する櫛形形状部28が設けられ、電源側補強部材23には2つの凸部28a、28bに係合する2つの凹部が形成された櫛形形状部29が設けられているので、電源側補強部材23とグランド側補強部材24を接着する表面積が大きくなる。
したがって、電源側補強部材23とグランド側補強部材24とが絶縁性接着剤25で接続される強度を高め、LSI3が反るのをより確実に抑えることができる。
また、電源側補強部材23の電源側対向面26に凸部が形成され、グランド側補強部材24のグランド側対向面27にこの凸部に係合する凹部が設けられても良い。
次に、本発明の第3実施形態について説明するが、前記実施形態と同一の部位には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。
図9及び図10に示すように、本実施形態の半導体装置31は、上記実施形態の半導体装置1の補強板12に代えて補強板32を備えている。
補強板32は、板状に形成された電源側補強部材33と、電源側補強部材33と係合するように側面視で略L字型に形成されたグランド側補強部材34と、補強部材33、34に挟まれる位置に配置され補強部材33、34を接続する絶縁性接着剤(絶縁部、絶縁部材)35とを有している。
電源側補強部材33とグランド側補強部材34は、上記の補強部材6、7と同じ材料で形成され、絶縁性接着剤35は、上記の絶縁性接着剤8と同じ材料で形成されている。
電源側補強部材33とグランド側補強部材34は、それぞれ電源パッド4とグランドパッド5に接合部材13により接続されている。このとき、接合部材13で電源パッド4とグランドパッド5が短絡しないように、接合部材13が配置されている。
まず、リフロー工程において、半田ボール11が融点温度以上となるような高温環境下でLSI3を配線基板2の主面2aに実装する。
その後、電源側補強部材33の底面33aとグランド側補強部材34の面34a、及び電源側補強部材33の側面33bとグランド側補強部材34の面34bを絶縁性接着剤35でそれぞれ接続して、補強板32を形成する。
そして、雰囲気を半田ボール11の融点温度以下にして、LSI3と配線基板2の反りが戻った状態で、補強板32を半田や熱硬化性の接着剤等によって配線基板2に実装する。
なお、LSI3及び補強板32の実装方法はこの限りでなく、半田ボール11の融点温度以上の環境下において、LSI3と補強板32を一度に配線基板2に実装しても良い。
さらに、電源側補強部材33とグランド側補強部材34とを互いに直交する2方向で接続するので、電源側補強部材33とグランド側補強部材34とを接着する表面積が大きくなる。したがって、電源側補強部材33とグランド側補強部材34とが絶縁性接着剤35で接続される強度を高め、LSI3が反るのをより確実に抑えることができる。
なお、本実施形態では、グランド側補強部材が板状に形成され、電源側補強部材がグランド側補強部材と係合するように側面視でL字型に形成されていても良い。
次に、本発明の第4実施形態について説明するが、前記実施形態と同一の部位には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。
図11及び図12に示すように、本実施形態の半導体装置41は、上記実施形態の半導体装置1の配線基板2、補強板12に代えて、配線基板42、補強板43をそれぞれ備えている。
電源パッド44、45とグランドパッド46、47とは、互いの対応する辺が平行となるように、所定距離離間して格子状に配置されている。そして、電源パッド44、45同士、グランドパッド46、47同士が、格子の対角線上にそれぞれ配置されている。
なお、電源パッドとグランドパッドの数、形状、及び配置はこの限りではなく、電源パッドとグランドパッドが配線基板42の裏面2bで互いに所定距離離間して絶縁した状態で配置されていれば良い。
補強部材50~53は、互いの対応する辺が平行となるように所定距離離間して格子状に配置されている。そして、電源側補強部材50、51同士、グランド側補強部材52、53同士が、格子の対角線上にそれぞれ配置されている。
電源側対向面50aとグランド側対向面53aには、上記第2実施形態と同様に、互いに係合する櫛形形状部50bと櫛形形状部53bとがそれぞれ形成されている。
隣り合う電源側補強部材50とグランド側補強部材52、電源側補強部材51とグランド側補強部材52、電源側補強部材51とグランド側補強部材53の間にも、不図示の櫛形形状部が同様に形成されている。
互いに係合する櫛形形状部同士の間には一定の隙間が形成され、この隙間に絶縁性接着剤54が配置されている。以上のようにして、絶縁性接着剤54により補強部材50~53が接続されている。
そして、電源側補強部材50は電源パッド44に、電源側補強部材51は電源パッド45に、グランド側補強部材52はグランドパッド46に、グランド側補強部材53はグランドパッド47に、それぞれ接合部材13により接続されている。
このとき、接合部材13で電源側補強部材50、51とグランド側補強部材52、53とが互いに短絡しないように、接合部材13が配置されている。
まず、リフロー工程において、半田ボール11が融点温度以上となるような高温環境下で、LSI3を配線基板42の主面2aに実装する。
その後、電源側補強部材50、51とグランド側補強部材52、53とを絶縁性接着剤54で互いに接続して、補強板43を形成する。
そして、雰囲気を半田ボール11の融点温度以下にして、LSI3と配線基板42の反りが戻った状態で補強板43を半田や熱硬化性の接着剤等によって配線基板42に実装する。
なお、LSI3及び補強板43の実装方法はこの限りでなく、半田ボール11の融点温度以上の環境下において、LSI3と補強板43を一度に配線基板42に実装しても良い。
さらに、配線基板に電源パッドとグランドパッドが数多く設けられている場合であっても、半導体装置41をコンパクトに構成しつつ補強部材を備えることができる。
例えば、上記第1実施形態から第4実施形態では、電源側補強部材とグランド側補強部材とを絶縁性接着剤によりそれぞれ接続した。しかし、絶縁性接着剤を設けずに電源側補強部材とグランド側補強部材との間に空気による層を設けて両補強部材を互いに絶縁しても良い。
2、42 配線基板
2a 主面(第一の面)
2b 裏面(第二の面)
4、44、45 電源パッド
5、46、47 グランドパッド
6、23、33、50、51 電源側補強部材
7、24、34、52、53 グランド側補強部材
8、25、35、54 絶縁性接着剤(絶縁部材、絶縁部)
14 コネクタ(接続部)
26、50a 電源側対向面
27、53a グランド側対向面
28、29、50b、53b 櫛形形状部
28a、28b 凸部
33a 底面(第一基準面)
33b 側面(第二基準面)
Claims (8)
- 配線基板と、
前記配線基板の第一の面上に固定された半導体チップと、
前記配線基板の前記第一の面と反対側の第二の面上に設けられ、前記配線基板に電力を供給するための電源パッドと、
前記配線基板の前記第二の面上に設けられ、前記配線基板を接地するためのグランドパッドと、
前記電源パッドに接続された金属製の電源側補強部材と、
前記グランドパッドに接続された金属製のグランド側補強部材と、
前記電源側補強部材と前記グランド側補強部材を絶縁する絶縁部と、
を備えることを特徴とする半導体装置。 - 前記電源側補強部材と前記グランド側補強部材には、互いに対向する電源側対向面とグランド側対向面がそれぞれ形成され、
前記電源側対向面と前記グランド側対向面のうちいずれか一方の面には、他方の面に向けて突出する凸部が形成され、
前記他方の面には、間に前記絶縁部を挟んで前記凸部に係合する凹部が形成されていることを特徴とする請求項1に記載の半導体装置。 - 前記一方の面には、複数の前記凸部を有する櫛形形状部が設けられていることを特徴とする請求項2に記載の半導体装置。
- 前記電源側補強部材と前記グランド側補強部材のいずれか一方には互いに交差する第一基準面と第二基準面が設けられ、
前記電源側補強部材と前記グランド側補強部材の他方には前記第一基準面、前記第二基準面にそれぞれ対向する第一対向面、前記第二対向面が設けられ、
前記第一基準面と前記第一対向面、前記第二基準面と前記第二対向面は、間に前記絶縁部を挟んでそれぞれ接続されていることを特徴とする請求項1に記載の半導体装置。 - 前記電源側補強部材は板状に形成され、隣り合う2つの面を前記第一基準面及び前記第二基準面とし、
前記第一対向面と前記第二対向面は、前記グランド側補強部材に設けられていることを特徴とする請求項4に記載の半導体装置。 - 前記絶縁部は、前記電源側補強部材と前記グランド側補強部材の間に配置され、前記電源側補強部材と前記グランド側補強部材とを接続する絶縁部材であることを特徴とする請求項1に記載の半導体装置。
- 前記電源側補強部材と前記グランド側補強部材の縦弾性係数が170GPa以上であることを特徴とする請求項1に記載の半導体装置。
- 前記電源側補強部材には、電源の端子を着脱可能な接続部が設けられていることを特徴とする請求項1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US13/388,285 US8547705B2 (en) | 2009-08-20 | 2010-08-20 | Semiconductor device having power supply-side and ground-side metal reinforcing members insulated from each other |
JP2011527716A JP5708489B2 (ja) | 2009-08-20 | 2010-08-20 | 互いに絶縁された金属性の電源側およびグランド側補強部材を有する半導体装置 |
CN201080036314.7A CN102473689B (zh) | 2009-08-20 | 2010-08-20 | 具有彼此绝缘电源侧和接地侧金属加固部件的半导体器件 |
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JP2009-190962 | 2009-08-20 | ||
JP2009190962 | 2009-08-20 |
Publications (1)
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WO2011021690A1 true WO2011021690A1 (ja) | 2011-02-24 |
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PCT/JP2010/064075 WO2011021690A1 (ja) | 2009-08-20 | 2010-08-20 | 互いに絶縁された金属性の電源側およびグランド側補強部材を有する半導体装置 |
Country Status (4)
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US (1) | US8547705B2 (ja) |
JP (1) | JP5708489B2 (ja) |
CN (1) | CN102473689B (ja) |
WO (1) | WO2011021690A1 (ja) |
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JP2014229761A (ja) * | 2013-05-23 | 2014-12-08 | 株式会社東芝 | 電子機器 |
US10629513B2 (en) * | 2015-06-04 | 2020-04-21 | Eaton Intelligent Power Limited | Ceramic plated materials for electrical isolation and thermal transfer |
Citations (4)
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JPH0697307A (ja) * | 1992-09-16 | 1994-04-08 | Hitachi Ltd | 半導体集積回路装置 |
JPH0888302A (ja) * | 1994-04-22 | 1996-04-02 | Nec Corp | 電子パッケージ組立体用支持部材およびこれを用いた電 子パッケージ組立体 |
JP2008244394A (ja) * | 2007-03-29 | 2008-10-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2009021366A (ja) * | 2007-07-11 | 2009-01-29 | Renesas Technology Corp | 半導体装置 |
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JPH0517269Y2 (ja) * | 1986-05-15 | 1993-05-10 | ||
JPH04257498A (ja) * | 1991-02-13 | 1992-09-11 | Matsushita Electric Ind Co Ltd | データ担体 |
EP0678917B1 (en) | 1994-04-22 | 2003-06-25 | Nec Corporation | Supporting member for cooling means and electronic package using the same |
US5699610A (en) | 1994-04-22 | 1997-12-23 | Nec Corporation | Process for connecting electronic devices |
CA2154409C (en) | 1994-07-22 | 1999-12-14 | Yuzo Shimada | Connecting member and a connecting method using the same |
JPH11265967A (ja) * | 1998-03-17 | 1999-09-28 | Nec Corp | Lsi実装基板の構造及びその製造方法 |
JPH11274363A (ja) * | 1998-03-25 | 1999-10-08 | Denso Corp | 電子部品の実装構造 |
JP2000251043A (ja) * | 1999-02-26 | 2000-09-14 | Ibiden Co Ltd | Icカードおよびicカード用端子板 |
JP3414342B2 (ja) | 1999-11-25 | 2003-06-09 | 日本電気株式会社 | 集積回路チップの実装構造および実装方法 |
JP2007193598A (ja) * | 2006-01-19 | 2007-08-02 | Sharp Corp | Icカード |
JP2008124248A (ja) | 2006-11-13 | 2008-05-29 | Toppan Printing Co Ltd | 半導体装置 |
JP2008235852A (ja) | 2007-02-23 | 2008-10-02 | Hitachi Metals Ltd | セラミックス基板及びこれを用いた半導体モジュール |
JP5194596B2 (ja) * | 2007-07-11 | 2013-05-08 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
-
2010
- 2010-08-20 JP JP2011527716A patent/JP5708489B2/ja not_active Expired - Fee Related
- 2010-08-20 CN CN201080036314.7A patent/CN102473689B/zh not_active Expired - Fee Related
- 2010-08-20 WO PCT/JP2010/064075 patent/WO2011021690A1/ja active Application Filing
- 2010-08-20 US US13/388,285 patent/US8547705B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697307A (ja) * | 1992-09-16 | 1994-04-08 | Hitachi Ltd | 半導体集積回路装置 |
JPH0888302A (ja) * | 1994-04-22 | 1996-04-02 | Nec Corp | 電子パッケージ組立体用支持部材およびこれを用いた電 子パッケージ組立体 |
JP2008244394A (ja) * | 2007-03-29 | 2008-10-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2009021366A (ja) * | 2007-07-11 | 2009-01-29 | Renesas Technology Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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US8547705B2 (en) | 2013-10-01 |
CN102473689B (zh) | 2014-09-17 |
CN102473689A (zh) | 2012-05-23 |
JP5708489B2 (ja) | 2015-04-30 |
JPWO2011021690A1 (ja) | 2013-01-24 |
US20120126432A1 (en) | 2012-05-24 |
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