WO2011013937A2 - Procédé de prétraitement dans lequel on utilise un système de pulvérisation et appareil de prétraitement utilisé dans un appareil de pulvérisation rouleau à rouleau - Google Patents

Procédé de prétraitement dans lequel on utilise un système de pulvérisation et appareil de prétraitement utilisé dans un appareil de pulvérisation rouleau à rouleau Download PDF

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Publication number
WO2011013937A2
WO2011013937A2 PCT/KR2010/004757 KR2010004757W WO2011013937A2 WO 2011013937 A2 WO2011013937 A2 WO 2011013937A2 KR 2010004757 W KR2010004757 W KR 2010004757W WO 2011013937 A2 WO2011013937 A2 WO 2011013937A2
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WO
WIPO (PCT)
Prior art keywords
gas
roll
flexible film
sputtering
guide roller
Prior art date
Application number
PCT/KR2010/004757
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English (en)
Korean (ko)
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WO2011013937A3 (fr
Inventor
한기룡
김경훈
윤정상
최문하
Original Assignee
지.텍(주)
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Application filed by 지.텍(주) filed Critical 지.텍(주)
Publication of WO2011013937A2 publication Critical patent/WO2011013937A2/fr
Publication of WO2011013937A3 publication Critical patent/WO2011013937A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Definitions

  • the present invention relates to a pretreatment method using a sputtering method and a pretreatment device used in a roll-to-roll sputtering device, and specifically, a pretreatment method using a sputtering method which reduces pretreatment efficiency and film loss and improves adhesion of a thin film. And a pretreatment apparatus for use in a roll-to-roll sputtering apparatus.
  • Roll-to-Roll process unwinding polymer substrates such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfate (PES) used in flexible displays and solar cells
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyether sulfate
  • the roll-to-roll process proceeds with a pretreatment process of removing foreign matters from the flexible film and a process of depositing a thin film on the flexible film.
  • the pretreatment process in the current industry is generally carried out by an ion gun type or DC bombard type device.
  • FIG. 1 shows a pretreatment apparatus for a film by a conventional ion gun.
  • FIG. 2 shows a pretreatment apparatus for a film by DC bombard type.
  • the FET film is located between the anode (shown as cathode unit +) and the cathode (shown as cathode unit-), and when DC high voltage is applied to the anode and cathode, an electric field is formed and the argon ionized in the plasma state.
  • the gas and oxygen gas are driven toward the cathode, and in the process, they collide with the FET film and clean the foreign matter on the surface of the film.
  • both devices In order to pretreat the surface of the film by the ion gun type and the DC Bambad type shown in FIGS. 1 and 2, both devices must push ions to the film by high voltage while collecting ion electrons in one place. Therefore, there is a problem that the pretreatment efficiency is low compared to the high voltage.
  • the pre-treatment device by the ion gun or DC Bambad type has a problem that the equipment installation cost is expensive.
  • the technical problem to be achieved by the present invention is a pre-treatment method and a roll-to-roll using a sputtering method having a high pre-treatment efficiency, less loss of the surface of the film by the plasma, improved adhesion during deposition of the thin film after the pre-treatment step, and lower manufacturing cost
  • the present invention provides a pretreatment apparatus for use in a sputtering apparatus.
  • a pretreatment method using a sputtering method comprising: applying radio frequency (RF) power to a guide roller on which an electrode is formed; Injecting gas into the housing; Ionizing the injected gas into a plasma state by the RF power; And adsorbing and removing foreign substances on the surface of the flexible film by colliding with the flexible film wound on the guide roller.
  • RF radio frequency
  • a pre-treatment apparatus used in the roll-to-roll sputtering apparatus the roll-to-roll apparatus, RF power supply for supplying RF power;
  • a guide roller having an electrode, wherein the RF power is applied to the electrode to move the flexible film;
  • a gas supply unit supplying a gas;
  • a housing which ionizes the gas into a plasma state by the RF power, injects the gas into the flexible film, and collects gas that adsorbs foreign substances on the surface of the flexible film.
  • the pretreatment method using the sputtering method and the roll-to-roll sputtering device according to the present invention has excellent pretreatment efficiency, less loss of the surface of the film by plasma, and improved adhesion during thin film deposition after the pretreatment step. It works.
  • the present invention has the effect of low production cost without using expensive equipment.
  • FIG. 1 shows a pretreatment apparatus for a film by a conventional ion gun.
  • FIG. 2 shows a pretreatment apparatus for a film by DC bombard type.
  • Figure 3 illustrates in detail the pretreatment apparatus of the roll-to-roll sputtering apparatus according to the present invention.
  • FIG. 4 is a side view of the guide roller shown in FIG. 3.
  • FIG. 5 is a flowchart illustrating a procedure of a preprocessing method using a sputtering method according to the present invention.
  • Figure 6 illustrates one embodiment of a roll-to-roll sputtering apparatus having a pretreatment apparatus according to the present invention.
  • the pretreatment method using the sputtering method and the roll-to-roll sputtering apparatus according to the present invention does not form a single pole (cathode) directly on the film, but indirectly at a specific position around the film ( If the pre-treatment was carried out by pushing the ionized gas to the film by the formation of a cathode), RF power was applied to the guide roller having one electrode so that the gas was driven by the film wound on the guide roller so that the ionized gas was immediately driven into the film. This is configured to remove foreign substances on the film surface.
  • Figure 3 illustrates in detail the pretreatment apparatus of the roll-to-roll sputtering apparatus according to the present invention.
  • the pretreatment device 40 includes a guide roller 41, a housing 42, an RF power supply 43, a gas supply 44, and a vacuum pump 45.
  • the guide roller 41 includes an electrode 41a, and RF power is applied to the electrode 41a to move the flexible film while rotating.
  • the housing 42 receives argon (Ar) gas and oxygen (O 2) gas, generates plasma by the RF power, injects the film into the PET film, and collects gas that adsorbs foreign substances on the surface of the flexible film. .
  • Ar argon
  • O 2 oxygen
  • the gas supply unit 44 supplies argon (Ar) gas and oxygen (O 2) gas.
  • the vacuum pump 45 absorbs the gas to which the foreign matter is adsorbed.
  • Argon gas and oxygen gas are ionized in the plasma state by the RF power applied to the guide roller 41.
  • the ionized gases Ar + and O2 + are driven by the guide roller 41 having the electrode 41a, and the film wound on the guide roller 41 collides with Ar + and O2 +, and foreign matter on the surface of the film is adsorbed to the ionized gas. As a result, the foreign matter on the surface of the film is removed to perform the pretreatment process.
  • the guide roller 41 has an electrode 41a therein.
  • the width l of the guide roller 41 ranges from 1000 millimeters (mm) or more to 2000 millimeters (mm) or less. Preferably, the width of the guide roller 41 is 1600 millimeters (mm).
  • the width of the flexible film has a range of 1200 millimeters or more to 1500 millimeters or less.
  • the width of the guide roller 41 is 1600 millimeters (mm)
  • the width of the flexible film has about 1300 millimeters (mm).
  • the guide roller 41 used in the present invention uses a material having excellent electrical conductivity and low wear.
  • a material having excellent electrical conductivity and low wear For example, it is preferable to use stainless steel, copper (Cu), aluminum (Al) and the like, but the present invention is not limited thereto and may be variously performed according to the development of technology.
  • the guide roller 41 forms an electrode (cathode) by applying RF power to the guide roller 41, and the guide roller 41 in which Ar + and O2 + are a cathode while gas injected into the housing 42 is ionized.
  • the guide roller 41 is provided with the electrode (cathode 41a)
  • the ionized gases collide with the film wound around the guide roller easily by a slight voltage, and the damage of the film is reduced because a small voltage is used. Can be.
  • gas ions are driven directly into the film, the efficiency of treating foreign matters is excellent, and thus adhesion strength may be increased when a thin film is deposited on the film in the future.
  • the pretreatment process can be performed by separately adding a housing. Therefore, there is also an advantage that the manufacturing cost is reduced.
  • FIG. 5 is a flowchart illustrating a procedure of a preprocessing method using a sputtering method according to the present invention.
  • the first step is to apply a radio frequency (RF) power to the guide roller on which the electrode is formed (S410).
  • RF radio frequency
  • the second step is to inject the gas into the housing (S420).
  • a mixed gas consisting of argon gas and oxygen gas is injected.
  • the concentration of gas ranges from 400 sccm to 1000 sccm.
  • the gas concentration is 500 sccm.
  • the injected gas is ionized by the RF power (S430).
  • the mixed gas becomes ions in the plasma state by Ar + and O 2 + by RF power.
  • the fourth step adsorbs the foreign matter on the surface of the film while the ionized gas collides with the film wound on the guide roller (S440).
  • the ionized gas impinging on the film adsorbs foreign matters of the film and is separated from the film (S450).
  • the gas to which the foreign matter is attached is absorbed by the vacuum pump (S460).
  • Figure 6 illustrates one embodiment of a roll-to-roll sputtering apparatus having a pretreatment apparatus according to the present invention.
  • the roll-to-roll sputtering device unwinds the flexible film by the unwinder roller 10, and the winder roller 140 holds the flexible film, and the flexible film unwinds the roller 10.
  • a plurality of rollers 20, 30, 50, 60, 90, 100, 110, 120, 130, the drum (Drum, 70) and the like In the pre-processing unit 40, a plurality of rollers 20, 30, 50, 60, 90, 100, 110, 120, 130, the drum (Drum, 70) and the like.
  • the present invention may additionally be equipped with a thin film meter.
  • the film is a flexible polymer flexible substrate, and PET (Polyethylene Terephthalate), PES (Polyether Sulfone), PI (Polyimide), PEN (Polyethylene Naphthalate), PAR (Polyarylate), PC (polycarbonate) and the like are used.
  • PET Polyethylene Terephthalate
  • PES Polyether Sulfone
  • PI Polyimide
  • PEN Polyethylene Naphthalate
  • PAR Polyarylate
  • PC polycarbonate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé de prétraitement dans lequel on utilise un système de pulvérisation, ledit procédé comprenant: une étape d'application de puissance radiofréquence (RF) à un rouleau-guide comportant une électrode; une étape d'injection de gaz dans une enceinte; une étape d'ionisation du gaz injecté, pour le transformer en plasma, au moyen de la puissance RF; une étape dans laquelle on laisse le gaz ionisé heurter un film souple enroulé autour du rouleau-guide et absorber puis éliminer les substances étrangères présentes sur la surface du film souple. Le procédé de prétraitement dans lequel on utilise un système de pulvérisation selon la présente invention assure une excellente efficacité de prétraitement, réduit la perte de surface du film provoquée par le plasma et améliore les propriétés d'adhérence d'un film mince pendant un procédé de dépôt de film mince exécuté après un procédé de prétraitement.
PCT/KR2010/004757 2009-07-28 2010-07-21 Procédé de prétraitement dans lequel on utilise un système de pulvérisation et appareil de prétraitement utilisé dans un appareil de pulvérisation rouleau à rouleau WO2011013937A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090068873A KR101144233B1 (ko) 2009-07-28 2009-07-28 롤-투-롤 스퍼터링 장치의 전처리 방법 및 장치
KR10-2009-0068873 2009-07-28

Publications (2)

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WO2011013937A2 true WO2011013937A2 (fr) 2011-02-03
WO2011013937A3 WO2011013937A3 (fr) 2011-06-03

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WO (1) WO2011013937A2 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101725398B1 (ko) * 2016-10-21 2017-04-11 서상일 유리창 세척용 세척부재

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050096188A (ko) * 2003-02-18 2005-10-05 코니카 미놀타 홀딩스 가부시키가이샤 유기 박막 트랜지스터 소자 및 그의 제조 방법
KR100730435B1 (ko) * 2006-01-25 2007-06-19 엘에스전선 주식회사 정전기를 이용하는 전처리 수단을 구비한 코팅 장치
KR100864612B1 (ko) * 2001-07-24 2008-10-22 도판 인사츠 가부시키가이샤 증착 필름

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100864612B1 (ko) * 2001-07-24 2008-10-22 도판 인사츠 가부시키가이샤 증착 필름
KR20050096188A (ko) * 2003-02-18 2005-10-05 코니카 미놀타 홀딩스 가부시키가이샤 유기 박막 트랜지스터 소자 및 그의 제조 방법
KR100730435B1 (ko) * 2006-01-25 2007-06-19 엘에스전선 주식회사 정전기를 이용하는 전처리 수단을 구비한 코팅 장치

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KR101144233B1 (ko) 2012-05-10
KR20110011293A (ko) 2011-02-08
WO2011013937A3 (fr) 2011-06-03

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