WO2019154490A1 - Appareil de dépôt, procédé de revêtement d'un substrat souple et substrat souple muni d'un revêtement - Google Patents

Appareil de dépôt, procédé de revêtement d'un substrat souple et substrat souple muni d'un revêtement Download PDF

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Publication number
WO2019154490A1
WO2019154490A1 PCT/EP2018/053075 EP2018053075W WO2019154490A1 WO 2019154490 A1 WO2019154490 A1 WO 2019154490A1 EP 2018053075 W EP2018053075 W EP 2018053075W WO 2019154490 A1 WO2019154490 A1 WO 2019154490A1
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Prior art keywords
deposition
flexible substrate
substrate
chamber
power source
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PCT/EP2018/053075
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English (en)
Inventor
Thomas Deppisch
Peter Kurunczi
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Applied Materials, Inc.
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Publication date
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Priority to CN201880088935.6A priority Critical patent/CN111699277B/zh
Priority to JP2020542270A priority patent/JP7186234B2/ja
Priority to PCT/EP2018/053075 priority patent/WO2019154490A1/fr
Publication of WO2019154490A1 publication Critical patent/WO2019154490A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating

Definitions

  • Embodiments of the disclosure relate to thin-film deposition apparatuses and methods, particularly to apparatuses and methods for coating flexible substrates with thin layers.
  • embodiments of the disclosure relate to roll-to-roll (R2R) deposition apparatuses and coating methods for coating a flexible substrate.
  • embodiments of the disclosure relate to apparatuses and methods for coating a flexible substrate with a stack of layers, e.g. for thin-film solar cell production, thin-film battery production, and flexible display production.
  • Processing of flexible substrates is in high demand in the packaging industry, semiconductor industries and other industries. Processing may consist of coating a flexible substrate with a material, such as a metal, a semiconductor and a dielectric material, etching and other processing actions conducted on a substrate for the respective applications.
  • Systems performing this task generally include a coating drum, e.g. a cylindrical roller, coupled to a processing system with a roller assembly for transporting the substrate, and on which at least a portion of the substrate is coated.
  • a coating process such as a CVD process or a PVD process, particularly a sputter process, can be utilized for depositing thin layers onto flexible substrates.
  • Roll-to-roll deposition apparatuses are understood in that a flexible substrate of a considerable length, such as one kilometer or more, is uncoiled from a storage spool, coated with a stack of thin layers, and recoiled again on a wind-up spool.
  • a flexible substrate of a considerable length such as one kilometer or more
  • the display industry and the photovoltaic (PV) industry roll-to-roll deposition systems are of high interest.
  • the increasing demand for flexible touch panel elements, flexible displays, and flexible PV modules results in an increasing demand for depositing suitable layers in R2R-coaters.
  • improvements to the layers or layer stack systems are, for instance, having improved uniformity, improved product lifetime, and a lower number of defects per surface area.
  • Improvements of overall coating quality has been aimed to achieve by, for example, a pre-treatment or an after-treatment of the coated substrate with an ion beam from a linear ion source.
  • operation of such linear ion sources typically requires the provision of DC voltages of several kV, leading to a number of technical challenges.
  • a deposition apparatus for depositing a layer on a flexible substrate.
  • the deposition apparatus includes a first spool chamber housing a storage spool for providing the flexible substrate, a deposition chamber arranged downstream from the first spool chamber, and a second spool chamber arranged downstream from the deposition chamber and housing a wind-up spool for winding the flexible substrate thereon after deposition.
  • the deposition chamber includes a coating drum for guiding the flexible substrate past at least one deposition unit.
  • the deposition apparatus includes a treatment device.
  • the treatment device is configured to treat the flexible substrate, upstream or downstream from the at least one deposition unit, and the treatment device comprises: a linear ion source, including an extraction box including a plasma generating unit, and having a first linear slit as part of an extraction electrode, the slit being an ion outlet, provided on a side of the extraction box directed towards the flexible substrate, a ground electrode having a second linear slit, provided adjacent to the extraction box and downstream from the first linear slit in the path of the ions, a power source electrically connected to the extraction electrode and to ground potential, wherein the power source is adapted for operation at a frequency in the range from about 1 kHz to about 500 kHz.
  • a method of coating a flexible substrate with a layer includes unwinding the flexible substrate from a storage spool provided in a first spool chamber; depositing a layer on the flexible substrate with at least one deposition unit, while guiding the flexible substrate using a coating drum provided in a deposition chamber; treating the flexible substrate with an ion beam from a treatment device having a linear ion source, upstream or downstream from the at least one deposition unit, winding the flexible substrate on a wind-up spool provided in a second spool chamber after deposition, wherein the treatment device is configured to treat the substrate with a pulsed beam of ions.
  • a deposition apparatus for depositing a layer on a substrate. It includes a treatment device configured to treat the substrate, upstream or downstream from at least one deposition unit, wherein the treatment device comprises: a linear ion source, including an extraction box including a plasma generating unit, and having a first linear slit as part of an extraction electrode, the slit being an ion outlet, provided on a side of the extraction box directed towards the substrate, a ground electrode having a second linear slit, provided adjacent to the extraction box and downstream from the first linear slit in the path of the ions, and a power source electrically connected to the extraction box and to ground potential, wherein the power source is adapted for operation at a frequency in the range from about 1 kHz to about 500 kHz.
  • a linear ion source including an extraction box including a plasma generating unit, and having a first linear slit as part of an extraction electrode, the slit being an ion outlet, provided on a side of the extraction box directed towards the substrate,
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. 1 shows a sectional schematic view of a deposition apparatus according to embodiments described herein, with an enhanced schematic view on a treatment device;
  • FIG. 2 shows a sectional schematic view of a deposition apparatus according to further embodiments described herein;
  • FIG. 3 shows an enlarged schematic view of a part of a deposition chamber that may be used in some of the embodiments described herein;
  • FIG. 4 shows a schematic view of an AC sputter source that may be used in some of the embodiments described herein;
  • FIG. 5 shows a schematic view of a DC sputter source that may be used in some of the embodiments described herein.
  • the deposition apparatus 100 includes a first spool chamber 110 housing a storage spool 112 for providing the flexible substrate 10. Further, the deposition apparatus 100 includes a deposition chamber 120 arranged downstream from the first spool chamber 110. Additionally, the deposition apparatus 100 includes a second spool chamber 150 arranged downstream from the deposition chamber 120 and housing a wind-up spool 152 for winding the flexible substrate 10 thereon after deposition.
  • the deposition chamber 120 includes a coating drum 122 for guiding the flexible substrate past at least one, and typically past a plurality of deposition units 121.
  • the deposition apparatus includes a treatment device l60a, l60b, l60c.
  • the treatment device l60a, l60b, l60c can be arranged at a number of positions within the deposition apparatus. In Fig. 1, three different positions for the treatment device l60a, l60b, l60c are shown. Of these, typically one option may be realized according to embodiments, but also two or more treatment devices in one apparatus are possible.
  • Treatment device l60a is placed upstream of the first deposition unit 121. Hence, an ion beam from this treatment device l60a is used for pre-treating the substrate before the first deposition step, which typically improves adhesion of the deposited layers/coatings.
  • Treatment device l60b is placed downstream from the last deposition unit 121. It is thus used for an after-treatment of a layer which was deposited in a previous deposition step, for example to improve homogeneity of the coating or to change its structure.
  • Treatment device l60c is also provided after the last deposition unit 121, and is directed to treat a side of the substrate which has not been coated. This may for example be employed when a second deposition chamber 120 with a second coating drum 122 (both not shown) is provided adjacent to the first deposition chamber 120 of Fig. 1. In this case, treatment device l60c may for example pre-treat the side of the substrate 10 which is then subsequently coated in the second deposition chamber.
  • a deposition apparatus 100, 101 as described herein may be a Roll-to-Roll deposition apparatus as will be described in the following.
  • the deposition apparatus 101 may also work according to the well-known sheet-to- sheet-principle for depositing a layer on a (non- flexible) substrate lOb, which may be plane.
  • Such a deposition apparatus 101 comprises a treatment device l60a, l60b, l60c as is described with respect to embodiments further below, which is/are configured to treat the substrate lOb, upstream or downstream from at least one deposition unit 121.
  • the treatment device l60a, l60b, l60c includes a linear ion source 161.
  • the linear ion source 161 includes an extraction box 164 with a plasma generating unit 166. It has a first linear slit 170 as part of an extraction electrode 168, wherein the linear slit is an ion outlet, provided on a side of the extraction box 164 directed towards the substrate lOb. Further, the ion source has a ground electrode 172 having a second linear slit 174, which is provided adjacent to the extraction box and downstream from the first linear slit 170 in the path of the ions. Further, the treatment device has a power source 176 electrically connected to the extraction box 168 and to ground potential, wherein the power source 176 is adapted for operation at a frequency in the range from about 1 kHz to about 500 kHz.
  • the treatment devices l60a, l60b, l60c disclosed herein may be employed in a wide range of coating/deposition apparatuses and methods, which include, as a non-limiting example, sheet-to-sheet- deposition apparatuses and the Roll-to-Roll-apparatuses as described in the following.
  • a“deposition apparatus” can be generally understood as an apparatus configured for depositing material on a substrate, particularly a flexible substrate.
  • the deposition apparatus is a roll-to- roll (R2R) deposition configured for coating a flexible substrate with a stack of layers.
  • the deposition apparatus can be a vacuum deposition apparatus having at least one vacuum chamber, particularly a vacuum deposition chamber.
  • the deposition apparatus may be configured for a substrate length of 500 m or more, 1000 m or more, or several kilometers.
  • the substrate width can be 300 mm or more, particularly 500 mm or more, more particularly 1 m or more. Further, the substrate width can be 3 m or less, particularly 2 m or less.
  • a“flexible substrate” can be understood as a bendable substrate.
  • the“flexible substrate” can be a“foil” or a“web”.
  • the term“flexible substrate” and the term“substrate” may be synonymously used.
  • the flexible substrate as described herein may include materials like PET, HC-PET, PE, PI, PU, TaC, OPP, COP, COC, one or more metals, paper, combinations thereof, and already coated substrates like Hard Coated PET (e.g. HC-PET, HC-TaC) and the like.
  • the flexible substrate is a COP substrate provided with an index matched (IM) layer on both sides thereof.
  • the substrate thickness can be 20 pm or more and 1 mm or less, particularly from 50 pm to 200 pm.
  • a“deposition chamber” can be understood as a chamber having at least one deposition unit for depositing material on a substrate.
  • the deposition chamber may be a vacuum chamber, e.g. a vacuum deposition chamber.
  • the term“vacuum”, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar.
  • the pressure in a vacuum chamber as described herein may be between 10 5 mbar and about 10 8 mbar, more typically between 10 5 mbar and 10 7 mbar, and even more typically between about l0 6 mbar and about l0 7 mbar.
  • a“deposition unit” can be understood as a unit or device configured for depositing material on a substrate.
  • the deposition unit may be a sputter deposition unit, as described herein.
  • the deposition apparatus described herein is not limited to sputter deposition, and other deposition units may additionally be used.
  • CVD deposition units, evaporation deposition units, PECVD deposition units or other deposition units may be utilized.
  • a“coating drum” can be understood as a drum or a roller having a substrate support surface for contacting the flexible substrate.
  • the coating drum can be rotatable about a rotation axis and may include a substrate guiding region.
  • the substrate guiding region is a curved substrate support surface, e.g. a cylindrically symmetric surface, of the coating drum.
  • the curved substrate support surface of the coating drum may be adapted to be (at least partly) in contact with the flexible substrate during operation of the deposition apparatus.
  • the terms“upstream from” and“downstream from” as used herein may refer to the position of the respective chamber or of the respective component with respect to another chamber or component along the substrate transportation path.
  • the substrate is guided from the first spool chamber 110 through the deposition chamber 120 and subsequently guided to the second spool chamber 150 along the substrate transportation path via the roller assembly.
  • the deposition chamber 120 is arranged downstream from the first spool chamber 110, and the first spool chamber 110 is arranged upstream from the deposition chamber 120.
  • the second roller or second component is arranged downstream from the first roller or first component.
  • a“treatment device” is understood as a device which is configured to provide a treatment, by an ion and/or electron bombardment, to a layer deposited on a flexible substrate, or to the substrate prior to the deposition.
  • the treatment device is a contactless treatment device.
  • a gap of at least 5 mm, particularly at least 10 mm, more particularly at least 15 mm, may be provided between the treatment device and the substrate or layer to be treated.
  • the treatment device is an ion source, particularly a linear ion source (LIS).
  • the treatment device is configured to provide an ion bombardment on the flexible substrate, or on a layer deposited on the flexible substrate.
  • the ion source includes a MF (middle frequency) current extraction. It has been found that providing an ion bombardment to a substrate prior (upstream) to the first deposition step improves adhesion of the deposited layer stack. Also, a treatment of a layer deposited on a flexible substrate results in a densification of the layer, which can be beneficial for increasing the quality as well as the durability of the layer.
  • the linear ion source 161 (of any of treatment devices l60a, l60b, l60c) comprises an extraction box 164.
  • the ions from the plasma inside the extraction box 164 are extracted through a first linear slit 170.
  • the latter is a part of an extraction electrode 168 and forms an ion outlet, which is provided on a side of the extraction box 164 which is mounted to be directed towards the flexible substrate 10.
  • a ground electrode 172 has a further, second linear slit 174, which is provided downstream from the first linear slit 170 in the path of the ions leaving the extraction box 164 and thus the linear ion source 161.
  • a power source 176 is electrically connected with one of its output ports to the extraction box 168. With the other port, it is connected to ground potential.
  • the power source 176 is typically adapted for operation at a frequency, herein also called mid frequency or MF range, in the range from about 1 kHz to about 500 kHz, more typically from about 10 kHz to about 100 kHz.
  • the power source 176 is adapted to provide either a sine wave AC voltage, or a pulsed DC voltage.
  • the voltage of the power source 176 is in a range from about 500 V(pp) to about 2000 V(pp), more typically from about 700 V(pp) to about 1500 V(pp).
  • MF can discharge the extraction electrode several thousand times per second.
  • the tendency for a buid-up of charges is greatly reduced or even nearly nullified. This may lead to a reduction of the damaging phenomenon of arcing.
  • the ion beam includes positive as well as negatively charged ions. Negatively charged ions may be directly extracted. Additionally, electrons will be extracted.
  • the beam extracted from the plasma source may be roughly neutral, and thus, a conventional suppression electrode for focusing the charged beam can be omitted in embodiments.
  • a diode configuration of the ground electrode and the extraction electrode can thus be realized, instead of the conventional triode electrode design.
  • a blocking capacitor 178 may be provided between an outlet of the power source 176 and the extraction box 164, respectively to the extraction electrode.
  • the output voltage of the power source 176 may be adapted so that the AC(pp) output voltage has a DC offset of about half of the peak-to peak AC voltage.
  • the blocking capacitor 178 With the blocking capacitor 178, the number of extracted ions and electrons are equal, and no DC current is present over the capacitor. Since electrons are more mobile, as they are lighter and therefore faster than ions, the electron flow (or: electron current) can be influenced by adjusting the voltages in order to achieve the balance between ion flow and electron flow.
  • the output voltage of the power source 176 may be adapted so that an AC output voltage has a DC offset resulting in a negative peak potential of less than about 100 V. This helps to minimize electron extraction from the plasma in the extraction box 164.
  • the output voltage of the power source 176 may be adapted so that the AC output voltage connected to the extraction electrode 168 extracts positive ions and electrons intermittently with the AC frequency.
  • the power source 176 is adapted to provide a pulsed DC voltage, typically in a voltage range from about 500 V to about 2000 V, more typically from about 700 V to about 1500 V.
  • a pulsed DC voltage typically in a voltage range from about 500 V to about 2000 V, more typically from about 700 V to about 1500 V.
  • An exemplary diagram for the pulsed voltage over time is shown in Fig. 1, as an alternative to the sine wave AC shown in the other diagram.
  • a pulsed voltage it can be adjusted how much the substrate (with or without coating) is charged by the ion beam / electron beam. Due to the voltage level with respect to ground, it can be adjusted over a wide range if there is a majority of electrons in the beam, or a majority of ions, or they may be adjusted to be equal.
  • the substrate/layer will not become charged due to the beam, but remain neutral.
  • An effect is, that the problem of arcing between the charged substrate (with or without deposited layer(s)) and parts of the deposition apparatus, in particular the linear ion source, may be significantly reduced, or even completely avoided.
  • a charging behavior of the substrate can be widely regulated, which can be used to improve the coating adhesion and quality, etc.
  • the at least one deposition unit 124 is a direct current sputter deposition unit.
  • the at least one deposition unit 124 can be a pulsed direct current sputter deposition unit.
  • a target 125 of at least one deposition unit 124 can be a planar target.
  • the at least one deposition unit 124 can be a planar cathode sputter source.
  • a target 125 of the at least one deposition unit 124 can be a rotatable target.
  • FIGS. 4 and 5 various possible implementations of deposition units are described which may be used for the plurality of deposition units 121 as well as for at least one deposition unit 124 having a graphite target 125 as described herein.
  • the deposition apparatus 100 is configured such that the flexible substrate 10 can be guided from the first spool chamber 110 to the second spool chamber 150 along a substrate transportation path, wherein the substrate transportation path may lead through the deposition chamber 120.
  • the flexible substrate can be coated with a stack of layers in the deposition chamber 120.
  • a roller assembly comprising a plurality of rolls or rollers can be provided for transporting the substrate along the substrate transportation path, wherein two or more rollers, five or more rollers, or ten or more rollers of the roller assembly may be arranged between the storage spool and the wind-up spool.
  • the apparatus further includes a roller assembly configured to transport the flexible substrate along a partially convex and partially concave substrate transportation path from the first spool chamber to the second spool chamber.
  • the substrate transportation path may be partially curved to the right and partially curved to the left such that some guiding rollers contact a first main surface of the flexible substrate and some guiding rollers contact a second main surface of the flexible substrate opposite the first main surface.
  • the first guiding roller 107 in FIG. 2 contacts a second main surface of the flexible substrate and the flexible substrate is bent to the left while being guided by the first guiding roller 107 (“convex” section of the substrate transportation path).
  • the second guiding roller 108 in FIG. 2 contacts a first main surface of the flexible substrate and the flexible substrate is bent to the right while being guided by the second guiding roller 108 (“concave” section of the substrate transportation path).
  • a compact deposition apparatus may be provided.
  • some chambers or all chambers of the deposition apparatus may be configured as vacuum chambers that can be evacuated.
  • the deposition apparatus may include components and equipment allowing for the generation of or maintenance of a vacuum in the first spool chamber 110 and/or the deposition chamber 120 and/or the second spool chamber 150.
  • the deposition apparatus may include vacuum pumps, evacuation ducts, vacuum seals and the like for generating or maintaining a vacuum in the first spool chamber 110 and/or the deposition chamber 120 and/or the second spool chamber 150.
  • the first spool chamber 110 is typically configured to accommodate a storage spool 112, wherein the storage spool 112 may be provided with the flexible substrate 10 wound thereon.
  • the flexible substrate 10 can be unwound from the storage spool 112 and transported along the substrate transportation path (indicated by the arrows in FIGS. 1 and 2) from the first spool chamber 110 toward the deposition chamber 120.
  • the term“storage spool” as used herein may be understood as a roll on which a flexible substrate to be coated is stored. Accordingly, the term“wind-up spool” as used herein may be understood as a roll adapted for receiving the coated flexible substrate.
  • the term“storage spool” may also be referred to as a“supply roll” herein, and the term“wind-up spool” may also be referred to as a“take-up roll” herein.
  • sealing devices 105 may be provided between adjacent chambers, e.g. between the first spool chamber 110 and the deposition chamber 120 and/or between the deposition chamber 120 and the second spool chamber 150. Accordingly, beneficially the winding chambers (i.e. the first spool chamber 110 and the second spool chamber 150) may be vented or evacuated independently, in particular independently from the deposition chamber.
  • the sealing device 105 may include an inflatable seal configured to press the substrate against a flat sealing surface.
  • typically the coating drum 122 is configured for guiding the flexible substrate 10 past the plurality of deposition units, e.g.
  • the first deposition unit 121 A and the third deposition unit 121C can be AC (alternating current) sputter sources, as exemplarily described in more detail with reference to FIG. 4.
  • the coating drum 122 is rotatable around a rotation axis 123.
  • the coating drum may be actively driven.
  • a drive may be provided for rotating the coating drum.
  • the coating drum may include a curved substrate support surface, e.g. an outer surface of the coating drum 122, for contacting the flexible substrate 10.
  • the curved substrate support surface can be electrically conductive for providing an electrical potential, e.g. by employing a device 140 for applying an electrical potential as exemplarily described with reference to FIG. 3.
  • the substrate support surface may include or be made of an electrically conductive material, e.g. a metallic material.
  • the flexible substrate may be in direct contact with the substrate support surface of the coating drum.
  • the deposition units of the plurality of deposition units may be arranged in a circumferential direction around the coating drum 122, as schematically illustrated in FIGS. 1, 2 and 3.
  • the coating drum 122 rotates, the flexible substrate is guided past the deposition units which face toward the curved substrate support surface of the coating drum, so that the first main surface of the flexible substrate can be coated while being moved past the deposition units at a predetermined speed.
  • the substrate guiding region may be defined as an angular range of the coating drum in which the substrate is in contact with the curved substrate surface during the operation of the coating drum, and may correspond to the enlacement angle of the coating drum.
  • the enlacement angle of the coating drum may be 120° or more, particularly 180° or more, or even 270° or more, as is schematically depicted in FIG. 2.
  • an uppermost portion of the coating drum may not be in contact with the flexible substrate during operation, wherein the enlacement area of the coating drum may cover at least the entire lower half of the coating drum.
  • the coating drum may be enlaced in an essentially symmetric way by the flexible substrate.
  • the coating drum 122 may typically have a width in the range from 0.1 m to 4 m, more typically from 0.5 to 2 m, e.g. about 1.4 m.
  • the diameter of the coating drum may be more than 1 m, e.g. between 1.5 m and 2.5 m.
  • one or more rollers, e.g. guiding rollers, of the roller assembly may be arranged between the storage spool 112 and the coating drum 122 and/or downstream from the coating drum 122.
  • two guiding rollers are provided between the storage spool 112 and the coating drum 122, wherein at least one guiding roller may be arranged in the first spool chamber and at least one guiding roller may be arranged in the deposition chamber upstream from the coating drum 122.
  • three, four, five or more, particularly eight or more guiding rollers are provided between the storage spool and the coating drum.
  • the guiding rollers may be active or passive rollers.
  • An“active” roller or roll as used herein may be understood as a roller that is provided with a drive or a motor for actively moving or rotating the respective roller.
  • an active roller may be adjusted to provide a predetermined torque or a predetermined rotational speed.
  • the storage spool 112 and the wind-up spool 152 may be provided as active rollers.
  • the coating drum may be configured as an active roller.
  • active rollers can be configured as substrate tensioning rollers configured for tensioning the substrate with a predetermined tensioning force during operation.
  • a “passive” roller as used herein may be understood as a roller or roll that is not provided with a drive for actively moving or rotating the passive roller. The passive roller may be rotated by the frictional force of the flexible substrate that may be in direct contact with an outer roller surface during operation.
  • one or more guiding rollers 113 may be arranged downstream from the coating drum 122 and upstream from the second spool chamber 150.
  • at least one guiding roller may be arranged in the deposition chamber 120 downstream from the coating drum 122 for guiding the flexible substrate 10 toward the vacuum chamber, e.g. the second spool chamber 150, arranged downstream from the deposition chamber 120, or at least one guiding roller may be arranged in the second spool chamber 150 upstream from the coating drum 122 for guiding the flexible roller in a direction essentially tangential to the substrate support surface of the coating drum, in order to smoothly guide the flexible substrate onto the wind-up spool 152.
  • FIG. 3 shows an enlarged schematic view of a part of a deposition chamber that may be used in some of the embodiments described herein.
  • gas separation units 510 may be provided between two adjacent deposition units in order to reduce a flow of process gases from one deposition unit to other deposition units, e.g. to an adjacent deposition unit during operation, respectively.
  • the gas separation units 510 may be configured as gas separation walls which divide the inner volume of the deposition chamber in a plurality of separate compartments, wherein each compartment may include one deposition unit.
  • One deposition unit may be arranged between two neighboring gas separation units, respectively.
  • the deposition units may be separated by the gas separation units 510, respectively. Accordingly, beneficially a high gas separation between neighboring compartments/ deposition units can be provided.
  • each of the compartments which house a respective deposition unit can be evacuated independently from the other compartments housing other deposition units, such that the deposition conditions of the individual deposition units can be set as appropriate.
  • Different materials can be deposited on the flexible substrate by adjacent deposition units which may be separated by gas separation units.
  • the gas separation units 510 may be configured for adjusting a width of a slit 511 between the respective gas separation unit and the respective coating drum.
  • the gas separation unit 510 may include an actuator configured for adjusting the width of the slit 511.
  • the width of the slit 511 between the gas separation units and the coating drum may be small, for example 1 cm or less, particularly 5 mm or less, more particularly 2 mm or less.
  • the lengths of the slits 511 in the circumferential direction, i.e. the length of the respective gas separation passages between two adjacent deposition compartments may be 1 cm or more, particularly 5 cm or more, or even 10 cm or more. In some embodiments, the lengths of the slits may even be about 14 cm, respectively.
  • At least one first deposition unit of the plurality of deposition units 121 may be a sputter deposition unit.
  • each deposition unit of the plurality of deposition units 121 is a sputter deposition unit.
  • one or more sputter deposition units may be configured for DC sputtering, AC sputtering, RF (radio frequency) sputtering, MF (middle frequency) sputtering, pulsed sputtering, pulsed DC sputtering, magnetron sputtering, reactive sputtering or combinations thereof.
  • DC sputter sources may be suitable for coating the flexible substrate with conductive materials, e.g. with metals such as copper.
  • Alternating current (AC) sputter sources e.g. RF sputter sources or MF sputter sources, may be suitable for coating the flexible substrate with conductive materials or with isolating materials, e.g. with dielectric materials, semiconductors, metals or carbon.
  • the deposition apparatus described herein is not limited to sputter deposition, and other deposition units may be used in some embodiments.
  • CVD deposition units, evaporation deposition units, PECVD deposition units or other deposition units may be utilized.
  • the deposition chamber may be provided with sealed lids which may be opened and closed for replacing one or more deposition units.
  • At least one AC sputter source may be provided, e.g. in the deposition chamber, for depositing a non-conductive material on the flexible substrate.
  • at least one DC sputter source may be provided in the deposition chamber for depositing a conductive material on the flexible substrate.
  • At least one first deposition unit 301 of the plurality of deposition units may be an AC sputter source.
  • the first two deposition units of the plurality of deposition units are AC sputter sources, e.g. dual target sputter sources described below in more detail.
  • a dielectric material such as silicon oxide may be deposited on the flexible substrate with the AC sputter sources.
  • two adjacent deposition units, e.g. the first deposition units may be configured to deposit a silicon oxide layer directly on the first main surface of the flexible substrate in a reactive sputter process. The thickness of the resulting silicon oxide layer may be increased, e.g. doubled, by utilizing two or more AC sputter sources next to each other.
  • the remaining deposition units of the plurality of deposition units may be DC sputter sources.
  • at least one second deposition unit 302 of the plurality of deposition units arranged downstream from the at least one first deposition unit 301 may be a DC sputter source, e.g. configured for depositing an ITO layer.
  • two or more DC sputter sources configured for depositing a carbon layer or an ITO layer may be provided.
  • the carbon layer or the ITO layer may be deposited on top of the silicon oxide layer deposited by the at least one first deposition unit 301.
  • At least one third deposition unit 303 (e.g. three third deposition units) arranged downstream from the at least one second deposition unit 302, may be configured as a DC sputter unit, e.g. for depositing a metal layer.
  • the at least one deposition unit 124 can be arranged downstream from the at least one second deposition unit 302 and upstream from the at least one third deposition unit 303.
  • a total of seven deposition units may be provided.
  • the deposition chamber configuration shown in FIG. 3 is an example and other configurations are possible, e.g. configurations with another sequential order of deposition units or another number of deposition units.
  • the treatment device l60b may be located in the deposition chamber downstream from the plurality of deposition units, as exemplarily shown in FIG. 3. Further, in some embodiments which can be combined with other embodiments described herein, the treatment device l60b is arranged such that a layer deposited on the flexible substrate can be densified using the treatment device 160 when the flexible substrate is in contact with the substrate support surface of the coating drum 122. It is to be understood that, although not explicitly shown, more than one treatment device may be provided in the deposition chamber 120. For instance, one or more further treatment device(s) may be provided between the two neighboring deposition units of the plurality of deposition units. Accordingly, beneficially densification of individual layers of a layer stack can be provided.
  • FIG. 4 shows the AC sputter source 610 in more detail
  • FIG. 5 shows the DC sputter source 612 in more detail
  • the AC sputter source 610 shown in FIG. 4 may comprise two sputter devices, i.e. a first sputter device 701 and a second sputter device 702.
  • a“sputter device” is to be understood as a device including a target 703 comprising a material to be deposited on the flexible substrate.
  • the target may be made of the material to be deposited or at least of components of the material to be deposited.
  • a sputter device may include a target 703 configured as a rotatable target having a rotation axis.
  • a sputter device may include a backing tube 704 on which the target 703 may be arranged.
  • a magnet arrangement for generating a magnetic field during the operation of the sputter device may be provided, e.g. inside a rotatable target.
  • the sputer device may be referred to as a sputter magnetron.
  • cooling channels may be provided within the sputter device in order to cool the sputer device or parts of the sputter device.
  • the sputter device may be adapted to be connected to a support of a deposition chamber, e.g. a flange may be provided at an end of the sputter device.
  • the sputter device may be operated as a cathode or as an anode.
  • the first sputter device 701 may be operated as a cathode
  • the second sputter device 702 may be operated as an anode at one point in time.
  • the first sputter device 701 When an alternating current is applied between the first sputter device 701 and the second sputer device 702, at a later point in time, the first sputter device 701 may act as an anode and the second sputer device 702 may act as a cathode.
  • the target 703 may include or be made of silicon.
  • twin sputter device refers to a pair of sputter devices, e.g. to the first sputer device 701 and the second sputter device 702.
  • the first sputter device and the second sputter device may form a twin sputter device pair.
  • twin sputter devices may be designed in a similar way.
  • twin sputter devices may provide the same coating material, may substantially have the same size and substantially the same shape.
  • the twin sputer devices may be arranged adjacent to each other to form a sputter source which may be arranged in a deposition chamber.
  • the two sputter devices of the twin sputter device include targets made of the same material, e.g. silicon, ITO, or carbon.
  • the first sputter device 701 has a first axis, which may be the rotation axis of the first sputter device 701.
  • the second sputter device 702 has a second axis, which may be the rotation axis of the second sputter device 702.
  • the sputter devices provide a material to be deposited on the flexible substrate.
  • the material finally deposited on the flexible substrate can additionally include compounds of a processing gas.
  • the flexible substrate is guided past the twin sputter devices by the coating drum 122.
  • a coating window is limited by a first position 705 of the flexible substrate on the coating drum 122 and a second position 706 of the flexible substrate on the coating drum 122.
  • the coating window i.e. the portion of the flexible substrate between the first position 705 and the second position 706, defines the area of the substrate on which material may be deposited.
  • particles of the deposition material released from the first sputter device 701 and particles of the deposition material released from the second sputter device 702 reach the flexible substrate in the coating window.
  • the AC sputter source 610 may be adapted so as to provide a distance of the first axis of the first sputter device 701 to the second axis of the second sputter device 702 of 300 mm or less, particularly 200 mm or less.
  • the distance of the first axis of the first sputter device 701 and the second axis of the second sputter device 702 may be between 150 mm and 200 mm, more typically between 170 mm and 185 mm, such as 180 mm.
  • the outer diameter of the first sputter device 701 and of the second sputter device 701 which may be cylindrical sputter devices can be in the range of 90 mm and 120 mm, more typically between about 100 mm and about 110 mm.
  • the first sputter device 701 may be equipped with a first magnet arrangement and the second sputter device 702 may be equipped with a second magnet arrangement.
  • the magnet arrangements may be magnet yokes configured for generating a magnetic field to improve the deposition efficiency.
  • the magnet arrangements may be tilted towards each other. The magnet arrangements being arranged in a tilted way towards each other may mean in this context that the magnetic fields generated by the magnet arrangements are directed towards each other.
  • FIG. 5 shows an enlarged schematic view of a DC sputter source 612 that may be used in some of the embodiments described herein.
  • the at least one second deposition unit 302 depicted in FIG. 3 is configured as a DC sputter source 612
  • the at least one third deposition unit 303 is configured as a DC sputter source 612.
  • the DC sputter source 612 may include at least one cathode 613 including a target 614 for providing the material to be deposited on the flexible substrate.
  • the at least one cathode 613 may be a rotatable cathode, particularly an essentially cylindrical cathode, which may be rotatable around a rotation axis.
  • the target 614 may be made of the material to be deposited.
  • the target 614 may be a metal target, such as a copper or an aluminum target.
  • the at least one deposition unit 124 is configured as a DC sputter source as exemplarily shown in FIG. 5
  • the target 614 may for example be a graphite target.
  • a magnet assembly 615 for confining the generated plasma may be arranged inside the rotatable cathode.
  • the DC sputter source 612 may include a single cathode, as exemplarily shown in FIG. 5.
  • a conductive surface e.g. a wall surface of the deposition chamber, may act as an anode.
  • a separate anode such as an anode having the shape of a rod, may be provided next to the cathode such that an electric field may build up between the at least one cathode 613 and the separate anode.
  • a power supply may be provided for applying an electric field between the at least one cathode 613 and the anode.
  • a DC-electric field may be applied which may allow for the deposition of a conductive material, such as a metal.
  • a pulsed DC field is applied to the at least one cathode 613.
  • the DC sputter source 612 may include more than one cathode, e.g. an array of two or more cathodes.
  • the deposition units particularly the cathodes (e.g. the AC sputter source, the DC-rotatable cathode, the twin rotatable cathode, and the double DC planar cathode) are interchangeable. Accordingly, a common compartment design may be provided. Further, the deposition units may be connected to a process controller which is configured to individually control the respective deposition unit. Accordingly, beneficially, a process controller may be provided such that the reactive process can be run fully automated.
  • a process controller may be provided such that the reactive process can be run fully automated.
  • a deposition source as described herein may be configured for a reactive deposition process.
  • a process gas may be added to at least one of the plurality of separate compartments in which the individual deposition units are provided.
  • the process gas can include at least one of argon, C 2 l3 ⁇ 4 (acetylene), CH 4 (methane) and H (hydrogen).
  • Providing a process gas as described herein can be beneficial for layer deposition.
  • the deposition apparatus 100 includes a first spool chamber 110 housing a storage spool 112 for providing the flexible substrate 10, a deposition chamber 120 arranged downstream from the first spool chamber 110, and a second spool chamber 150 arranged downstream from the deposition chamber 120 and housing a wind-up spool 152 for winding the flexible substrate 10 thereon after deposition.
  • the deposition chamber 120 includes a coating drum 122 for guiding the flexible substrate past a plurality of deposition units 121 including at least one sputter deposition unit 125.
  • the coating drum is configured for providing an electrical potential to a substrate guiding surface of the coating drum.
  • the substrate guiding surface of the coating drum can be subjected to an electrical potential by using an electrical potential application device as described herein.
  • A“stack of layers” can be understood as two, three or more layers deposited on top of each other, wherein the two, three or more layers may be composed of the same material or of two, three or more different materials.
  • the stack of layers may include one or more conductive layers, e.g. a metal layer, and/or one or more isolating layers, e. g. a dielectric layer.
  • the stack of layers may include one or more transparent layers, e.g. a Si0 2 layer or an ITO layer.
  • at least one layer of the stack of layers may be a conductive transparent layer, e.g. an ITO layer.
  • an ITO layer may be beneficial for capacitive touch applications, e.g. for touch panels.
  • the ion bombardment and/or the electron bombardment can be achieved by accelerating electrons or ions, e.g. from a plasma provided in the deposition chamber 120, towards the coating drum 122 by providing the coating drum with an electrical potential, e.g. by a device 140 for applying an electrical potential as described herein.

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Abstract

L'invention concerne un appareil de dépôt (100, 101) permettant de revêtir un substrat souple (10, 10b). L'appareil de dépôt comprend une première chambre de bobine (110) logeant une bobine de stockage (112) destinée à fournir le substrat souple (10), une chambre de dépôt (120) disposée en aval de la première chambre de bobine (110), et une seconde chambre de bobine (150) disposée en aval de la chambre de dépôt (120) et logeant une bobine d'enroulement (152) destinée à enrouler le substrat souple (10) sur celle-ci après le dépôt. La chambre de dépôt (120) comprend un tambour de revêtement (122) destinée à guider le substrat souple devant une pluralité d'unités de dépôt (121) comprenant au moins une unité de dépôt (124) comportant une cible en graphite (125). En outre, l'appareil de dépôt (100) comprend un dispositif de traitement (160) conçu pour traiter le substrat flexible, en amont ou en aval de ladite unité de dépôt. Le dispositif de traitement (160a, 160b, 160c) comprend une source d'ions linéaire (161), qui comprend une source d'alimentation (176) électriquement connectée à une électrode d'extraction (168) et à un potentiel de masse, la source d'alimentation (176) étant conçue pour fonctionner à une fréquence dans la plage d'environ 1 kHz à environ 500 kHz.
PCT/EP2018/053075 2018-02-07 2018-02-07 Appareil de dépôt, procédé de revêtement d'un substrat souple et substrat souple muni d'un revêtement WO2019154490A1 (fr)

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CN201880088935.6A CN111699277B (zh) 2018-02-07 2018-02-07 沉积设备、涂覆柔性基板的方法和具有涂层的柔性基板
JP2020542270A JP7186234B2 (ja) 2018-02-07 2018-02-07 堆積装置、フレキシブル基板をコーティングする方法、及びコーティングを有するフレキシブル基板
PCT/EP2018/053075 WO2019154490A1 (fr) 2018-02-07 2018-02-07 Appareil de dépôt, procédé de revêtement d'un substrat souple et substrat souple muni d'un revêtement

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CN115341190A (zh) * 2022-08-06 2022-11-15 刘相汝 一种导电膜的镀膜系统
CN115341190B (zh) * 2022-08-06 2024-05-17 佛山市亲禾纸塑印刷包装材料制品有限公司 一种导电膜的镀膜系统

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