JP2021513004A - 堆積装置、フレキシブル基板をコーティングする方法、及びコーティングを有するフレキシブル基板 - Google Patents
堆積装置、フレキシブル基板をコーティングする方法、及びコーティングを有するフレキシブル基板 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 208
- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 238000000576 coating method Methods 0.000 title claims abstract description 77
- 239000011248 coating agent Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 223
- 238000012545 processing Methods 0.000 claims abstract description 57
- 238000000605 extraction Methods 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 18
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 17
- 238000004804 winding Methods 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 54
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims 2
- 150000001768 cations Chemical class 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 61
- 239000000463 material Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 19
- 230000006698 induction Effects 0.000 description 15
- 238000000926 separation method Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000005596 ionic collisions Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 1
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
【選択図】図1
Description
Claims (15)
- フレキシブル基板(10)上に層を堆積させるための堆積装置(100)であって:
フレキシブル基板(10)を提供するためのストレージスプール(112)を格納する第1のスプールチャンバ(110)と、第1のスプールチャンバ(110)の下流に配置された堆積チャンバ(120)と、堆積チャンバ(120)の下流に配置されて、堆積後にフレキシブル基板(10)を巻くための巻き取りスプール(152)を格納する第2のスプールチャンバ(150)とを備え、
堆積チャンバ(120)が:
− 少なくとも一つの堆積ユニットを通過するようにフレキシブル基板を誘導するためのコーティングドラム(122)、及び
− 少なくとも一つの堆積ユニットの上流又は下流でフレキシブル基板を処理するように構成された処理デバイス(160)
を含み、処理デバイス(160)が線形イオン源(161)を含み、
線形イオン源(161)が:
− プラズマ生成ユニット(166)を含み且つ抽出電極(168)の一部として第1の線形スリット(170)を有する抽出ボックス(164)であって、前記スリットが、抽出ボックス(164)のフレキシブル基板(10)と対向する一側面上に設けられたイオン出口である、抽出ボックス(164)、
− 抽出ボックスに隣接して且つイオンの経路において第1の線形スリット(170)の下流に設けられた、第2の線形スリット(174)を有する外側電極(172)、
− 抽出ボックス(168)及び大地電位に電気的に接続された電源(176)であって、約1kHzから約500kHzの範囲の周波数での動作に適合された電源(176)
を含む、堆積装置。 - 電源(176)が、随意で約500V(pp)から約2000V(pp)の電圧範囲の、正弦波AC電圧を提供するように適合されている、請求項1に記載の堆積装置。
- 電源(176)の出口と抽出ボックス(164)との間に阻止コンデンサ(178)が設けられている、請求項1又は2に記載の堆積装置。
- 電源(176)の出力電圧は、AC出力電圧がピークツーピークAC電圧の約半分のDCオフセットを有するように適合されている、請求項1から3のいずれか一項に記載の堆積装置。
- 電源(176)の出力電圧は、AC出力電圧が、抽出ボックス(164)内のプラズマからの電子抽出を最小化するために、約100V未満の負のピーク電位をもたらすDCオフセットを有するように適合されている、請求項1から4のいずれか一項に記載の堆積装置。
- 電源(176)の出力電圧は、抽出電極(168)に接続されたAC出力電圧が、AC周波数で正イオン及び電子を断続的に抽出するように適合されている、請求項1から5のいずれか一項に記載の堆積装置。
- 電源(176)が、随意で約500Vから約2000Vの電圧範囲の、パルスDC電圧を提供するように適合されている、請求項1に記載の堆積装置。
- 外側電極(172)と抽出電極(168)とがダイオード構成を形成する、請求項1から7のいずれか一項に記載の堆積装置。
- フレキシブル基板(10)を層でコーティングする方法であって:
第1のスプールチャンバ(110)内に設けられたストレージスプール(112)からフレキシブル基板(10)を繰り出すこと;
堆積チャンバ(120)内に設けられたコーティングドラム(122)を使用してフレキシブル基板を誘導しながら、少なくとも一つの堆積ユニット(121)を用いてフレキシブル基板(10)上に層を堆積させること;
少なくとも一つの堆積ユニット(121)の上流又は下流において、線形イオン源(161)を有する処理デバイス(160a、160b、160c)からのイオンビームでフレキシブル基板を処理すること、
堆積後、第2のスプールチャンバ(150)内に設けられた巻き取りスプール(152)上にフレキシブル基板を巻くこと
を含み、
処理デバイス(160a、160b、160c)が、イオンのパルスビームで基板(10)を処理するように構成される、方法。 - パルスビームが、処理デバイス(160a、160b、160c)の抽出電極(168)に接続された電源(176)の約0VとAC(pp)の間の電圧に等しいエネルギースペクトルを有するイオンを含む、請求項9に記載の方法。
- ビームが、正イオンに対して断続的なパルス電子をさらに含む、請求項9又は10に記載の方法。
- 抽出電極(168)に接続された抽出電圧は、AC出力電圧がピークツーピークAC電圧の約半分のDCオフセットを有するように構成される、請求項9から11のいずれか一項に記載の方法。
- 電源の出力電圧は、プラズマからの電子抽出を最小化するために、AC出力電圧が抽出電極において約100V未満の負のピーク電位をもたらすDCオフセットを有するように提供される、請求項9から12のいずれか一項に記載の方法。
- 電源(176)の出力電圧は、抽出電極に接続されたAC出力電圧が、AC周波数を用いて正イオン及び電子を断続的に抽出するように提供され、且つ、イオン及び電子は、分散されたエネルギースペクトルを有するか、又は電源(176)の電圧はパルスDC出力電圧として提供される、請求項9から13のいずれか一項に記載の方法。
- 基板(10b)上に層を堆積させるための堆積装置(101)であって:
− 少なくとも一つの堆積ユニット(121)の上流又は下流で基板(10b)を処理するように構成された処理デバイス(160a、160b、160c)を備え、処理デバイス(160a、160b、160c)が線形イオン源(161)を含み:
線形イオン源(161)が:
− プラズマ生成ユニット(166)を含み且つ抽出電極(168)の一部として第1の線形スリット(170)を有する抽出ボックス(164)であって、前記スリットが、抽出ボックス(164)の基板(10b)と対向する一側面上に設けられたイオン出口である、抽出ボックス(164)、
− 抽出ボックスに隣接して且つイオンの経路において第1の線形スリット(170)の下流に設けられた、第2の線形スリット(174)を有する外側電極(172)、
− 抽出ボックス(168)及び大地電位に電気的に接続された電源(176)であって、約1kHzから約500kHzの範囲の周波数での動作に適合された電源(176)
を含む、堆積装置。
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