WO2010067970A2 - Système de pulvérisation rouleau à rouleau pour dépôt des deux côtés d'un substrat - Google Patents

Système de pulvérisation rouleau à rouleau pour dépôt des deux côtés d'un substrat Download PDF

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Publication number
WO2010067970A2
WO2010067970A2 PCT/KR2009/006876 KR2009006876W WO2010067970A2 WO 2010067970 A2 WO2010067970 A2 WO 2010067970A2 KR 2009006876 W KR2009006876 W KR 2009006876W WO 2010067970 A2 WO2010067970 A2 WO 2010067970A2
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WIPO (PCT)
Prior art keywords
roll
substrate
sputter
deposition
sputter system
Prior art date
Application number
PCT/KR2009/006876
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English (en)
Korean (ko)
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WO2010067970A3 (fr
Inventor
김봉석
김한기
윤정상
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지.텍(주)
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Publication of WO2010067970A2 publication Critical patent/WO2010067970A2/fr
Publication of WO2010067970A3 publication Critical patent/WO2010067970A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering

Definitions

  • the present invention relates to a coating apparatus for simultaneously vacuum depositing both sides of a substrate, and more particularly, to a technique for simultaneously depositing both sides of a substrate transferred by a roll-to-roll system by sputtering.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • plating deposition technology Semiconductor deposition technology is divided into physical vapor deposition (PVD) technology, chemical vapor deposition (CVD) technology, and plating deposition technology.
  • PVD Physical Vapor Deposition
  • a target of a solid containing the constituent atoms of a desired thin film to the surface of the substrate in an atomic, molecular, or cluster state by physical action (evaporation, sublimation, sputtering). How to form.
  • the sputtering phenomenon refers to physical vapor deposition (PVD) using the principle that a target material is deposited on a substrate by energy that collides with an ionized cationic gas (Ar +) in a plasma state and collides with a target.
  • Ar + ionized cationic gas
  • sputtering deposition technology which is represented by PVD technology, is characterized in that it is easy to form a thin film of a high melting point metal or an alloy having a complex composition, and thus has been applied to various ULSI manufacturing processes.
  • FIG. 1 illustrates a process of depositing a lower surface of a substrate after depositing an upper surface of a substrate by a conventional one-side sputtering deposition.
  • the upper surface 120 which is one surface of the substrate 110, is deposited by sputtering deposition, and then vacuum deposition is performed in an initial state to deposit the lower surface 130, which is another surface of the substrate 110.
  • the chamber must be open.
  • the substrate 110 should be turned upside down in the direction of the target of the material to be deposited. This causes a lot of work time and the hassle of workers and eventually had a problem of lowering work efficiency.
  • the transfer of the substrate 110 is not continuous, and there is a limit in depositing a large amount of material on both sides of the substrate.
  • the technical problem to be solved by the present invention is to develop a roller system for continuously conveying a flexible polymer substrate in the form of a roll, and to provide a technique for simultaneously depositing both sides of the substrate by sputtering.
  • a roll-to-rule sputter system for depositing a substrate on both sides of a roll-to-roll system for transferring a substrate to a work space by a roller; A plurality of top sputter systems for depositing top surfaces of the substrate; And a plurality of lower sputter systems for depositing a lower surface of the substrate.
  • the present invention has the advantage of reducing the time and work efficiency by quickly processing a large amount of substrate duplex deposition work without the additional hassle because the substrate can be transferred continuously, both sides can be deposited simultaneously.
  • FIG. 1 illustrates a process of depositing a lower surface of a substrate after depositing an upper surface of a substrate by a conventional one-side sputtering deposition.
  • FIG. 2 illustrates a roll-to-roll double sided deposition sputter system according to the present invention.
  • FIG 3 is an enlarged view of the first upper sputter system of the present invention.
  • Figure 4 shows a substrate deposited on both sides by sputtering according to the present invention.
  • FIG. 2 illustrates a roll-to-roll double sided deposition sputter system according to the present invention.
  • the roll-to-roll double-sided deposition sputter system 200 is a substrate 220 by a servo motor (not shown) in the chamber 280.
  • Rewinder roll (210b) for rewinding Unwinder roll (210a) for releasing the substrate 220, and guide roller (Guide Roller, 240) that serves as a guide when transferring the substrate 220
  • the substrate 220 is a flexible polymer flexible substrate, and includes polyethylene terephthalate (PET), polyether sulfate (PES), polyimide (PI), polyethylene naphthalate (PEN), polylate (PAR), polycarbonate (PC), and the like. Metal) substrate and the like.
  • the surface temperature of the flexible polymer substrate 220 is preferably maintained at 50 degrees Celsius or less during the process.
  • Argon (Ar), nitrogen (N2), oxygen (O2), and the like may be used as the gas used in the first second ion beam sources 230a and 230b.
  • the first ion beam source 230a fires a sputter gun to impinge ion gas toward a target of the first, second, and third upper sputter systems 250a, 260a, and 270a.
  • the ion beam source 230b launches a sputter gun to impinge the ion gas toward the target of the fourth, fifth and sixth sputter systems 250a, 260a and 270a.
  • the first, second, and third upper sputter systems 250a, 260a, and 270a may have a predetermined distance (for example, a distance of 80 mm from a substrate with a thickness of about 80 mm apart from a substrate deposition thickness, a thin film state, etc.).
  • the fourth, fifth, and sixth lower sputter systems 250b, 260b, and 270b are disposed in parallel with the substrate 220 in a direction parallel to each other. It is arranged in parallel in a direction parallel to the substrate 220 at regular intervals.
  • first sputter system 250a and the fourth sputter system 250b, the second upper sputter system 260a and the fifth lower sputter system 260b, the third upper sputter system 270a and the Each of the sixth lower sputter systems 270b face each other at a predetermined interval (for example, the distance between the substrate and the target is adjusted depending on thin film deposition thickness, thin film state, etc.) with the substrate 220 therebetween. It is arranged.
  • the three pairs of sputter systems 250a to 270b may use four or more pairs as necessary. Detailed technical configuration of the three pairs of sputter systems 250a to 270b will be described below in detail with reference to FIG. 3. do.
  • FIG 3 is an enlarged view of the first upper sputter system of the present invention.
  • a first upper sputter gun 310a and a second sputter gun 310b are provided to face each other with the plasma 350 interposed therebetween.
  • a cast iron surface 330a is provided on a surface of the first sputter gun 310a and a target 340a is attached to an upper surface of the cast iron surface 330a.
  • the cast iron surface 330a may be mostly magnetized to an N pole or an S pole, and the unit magnet 320a may be the NS pole toward the cast iron surface 330a in the interior of the first sputter gun 310a.
  • 340a can be magnetized to the N pole.
  • the second sputter gun 310b includes a cast iron surface 330b and a target 340b in the same manner as the first sputter gun 310a, and has a unit magnet 320b inside the second sputter gun 310b.
  • the target 340b can be magnetized to the S pole.
  • a high density plasma 350 is formed and constrained between the first target 340a of the first sputter gun 310a and the second target 340b of the second sputter gun 310b as follows.
  • Forming an N pole on the first sputter gun 310a and forming an S pole on the second sputter gun 310b generates a uniform magnetic field B in one direction from the N pole to the S pole.
  • the high density plasma 350 is formed by the reciprocation and rotation of the electrons.
  • the shape of the high density plasma 350 formed at this time depends on the shape of the magnetic field (B). In other words, when the magnetic field B in one direction is directed from the first sputter gun 310a to the second sputter gun 310b, the plasma 350 is always between the first target 340a and the second target 340b. As a result, perfect plasma confinement occurs.
  • the upper surface of the flexible polymer substrate 220 is deposited by the deposition material 360b which is separated by sputtering the first target 340a and the second target 340b. At this time, the material 360a which does not affect the deposition toward the upward direction with respect to the flexible polymer substrate 220 generated by the sputtering is discharged to the outside.
  • the flexible polymer substrate 220 is not directly affected by the exposure of the plasma 350 in the deposition process by sputtering, there is no plasma damage, and thus a low temperature process is possible, thereby Deformation of the flexible polymer substrate 220 can be minimized.
  • the upper surface of the flexible polymer substrate 220 may be deposited thereby.
  • the bottom surface of the substrate 220 may be deposited by the deposition material facing upward with respect to the flexible polymer substrate 220 by the fourth to sixth lower sputter systems 250b, 260b, and 270b. have.
  • the material which does not affect the deposition downward toward the flexible polymer substrate 220 formed by the sputtering is discharged to the outside.
  • the first portion of the substrate 220 is mounted on a rewinder roll (Rewinder roll, 210b) and pulled by the rotation of a servo motor (not shown).
  • a rewinder roll Rewinder roll, 210b
  • a transfer flow of the entire polymer substrate 220 is formed in the rewinder roll 210b direction.
  • the transfer direction of the substrate 220 may be reversed in the direction of the unwinder roll 210a in the rewinder roll 210b. Therefore, by adjusting the servo motor (not shown), it is possible to precisely control the substrate 220 in a desired direction in accordance with the needs of the work.
  • a thin film can be deposited by efficiently sputtering a polymer surface of a large area and a considerable length without opening the chamber.
  • Argon (Ar) or the like having a positive potential radiated from the first ion beam source 230a and the second ion beam source 230b is generated in a plasma 350 state in a high vacuum chamber, and has a negative ( ⁇ ) potential.
  • Each target attached to the plurality of sputter systems 250a to 270b (340a, 340b in the case of 250a, and 270b, etc., but not shown in the drawing, but can be analogized in the same way) is accelerated toward the material.
  • the target material may be a material used in DC magnetron sputtering system, RF magnetron sputtering system, such as Si, Si / Al, Ge, Al, Be, Cr, Mo, Nb, Ta, Ti, W Of course, it can be applied in a variety of applications, such as In, Ni / Cr, Ti / Al needs.
  • the argon ions gain momentum and collide with the target, where the argon ions physically move (sputter) atoms from the target with the desired material component.
  • the sputtered atoms are moved to the surface of the polymer substrate 220 to condense, and at this time, the upper and lower surfaces of the polymer substrate 220 may be simultaneously deposited with the same components as the target according to the film growth step.
  • Figure 4 shows a substrate deposited on both sides by sputtering according to the present invention.
  • the upper surface 420 of the flexible polymer substrate 410 is deposited with an indium tin oxide (ITO) material as a transparent conductive oxide (TCO) layer, and the flexible polymer
  • ITO indium tin oxide
  • TCO transparent conductive oxide
  • the deposition materials on the upper and lower surfaces of the substrate may be variously applied according to the needs of the technology.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à un système de pulvérisation rouleau à rouleau pour dépôt des deux côtés d'un substrat. Le système de pulvérisation rouleau à rouleau comprend : un système rouleau à rouleau destiné à transporter le substrat vers un espace de travail par un rouleau; une pluralité de systèmes de pulvérisation supérieurs pour dépôt sur la surface supérieure du substrat; et une pluralité de systèmes de pulvérisation inférieurs pour dépôt sur la surface inférieure du substrat. Le système de pulvérisation rouleau à rouleau pour dépôt des deux côtés d'un substrat selon la présente invention réalise un dépôt pour une pluralité de substrats de façon rapide et facile, réduisant la quantité de travail pour les ouvriers, ce qui permet de raccourcir le temps de travail et d'améliorer la productivité.
PCT/KR2009/006876 2008-12-08 2009-11-23 Système de pulvérisation rouleau à rouleau pour dépôt des deux côtés d'un substrat WO2010067970A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0124042 2008-12-08
KR1020080124042A KR20100065624A (ko) 2008-12-08 2008-12-08 기판 양면 증착을 위한 롤-투-룰 스퍼터 시스템

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WO2010067970A2 true WO2010067970A2 (fr) 2010-06-17
WO2010067970A3 WO2010067970A3 (fr) 2010-07-29

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KR102180440B1 (ko) * 2018-05-18 2020-11-18 (주)이노시아 스퍼터링 장치 및 스퍼터링 방법
KR102216321B1 (ko) * 2020-07-13 2021-02-16 장주택 열 및 전기전도 향상을 위한 중층 박막 필름 및 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238669A (ja) * 2003-02-05 2004-08-26 Jfe Steel Kk 超低鉄損一方向性珪素鋼板およびその製造方法ならびに成膜装置
JP2005056591A (ja) * 2003-08-04 2005-03-03 Sumitomo Electric Ind Ltd 薄膜超電導線材及びその製造方法
KR20080088836A (ko) * 2007-03-30 2008-10-06 지 . 텍 (주) 롤-투-롤 스퍼터 장치

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Publication number Priority date Publication date Assignee Title
JPS63290274A (ja) * 1987-05-22 1988-11-28 Sumitomo Electric Ind Ltd 金属薄膜製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238669A (ja) * 2003-02-05 2004-08-26 Jfe Steel Kk 超低鉄損一方向性珪素鋼板およびその製造方法ならびに成膜装置
JP2005056591A (ja) * 2003-08-04 2005-03-03 Sumitomo Electric Ind Ltd 薄膜超電導線材及びその製造方法
KR20080088836A (ko) * 2007-03-30 2008-10-06 지 . 텍 (주) 롤-투-롤 스퍼터 장치

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WO2010067970A3 (fr) 2010-07-29

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