WO2011005530A2 - Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes - Google Patents

Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes Download PDF

Info

Publication number
WO2011005530A2
WO2011005530A2 PCT/US2010/039516 US2010039516W WO2011005530A2 WO 2011005530 A2 WO2011005530 A2 WO 2011005530A2 US 2010039516 W US2010039516 W US 2010039516W WO 2011005530 A2 WO2011005530 A2 WO 2011005530A2
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
article
point
heterostructure
cell
Prior art date
Application number
PCT/US2010/039516
Other languages
English (en)
Other versions
WO2011005530A3 (fr
Inventor
Paul J. Steinhardt
Salvatore Torquato
Marian Florescu
Original Assignee
The Trustees Of Princeton University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Trustees Of Princeton University filed Critical The Trustees Of Princeton University
Priority to EP10797577.3A priority Critical patent/EP2445986A4/fr
Priority to US13/379,740 priority patent/US9207357B2/en
Priority to JP2012516382A priority patent/JP2012530945A/ja
Publication of WO2011005530A2 publication Critical patent/WO2011005530A2/fr
Publication of WO2011005530A3 publication Critical patent/WO2011005530A3/fr
Priority to US14/350,713 priority patent/US9465141B2/en
Priority to US14/953,652 priority patent/US9461203B2/en
Priority to US15/280,150 priority patent/US10175389B2/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00—Measuring quantity of heat
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H01L33/0058—Processes for devices with an active region comprising only group IV elements comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49993—Filling of opening

Definitions

  • Embodiments of the invention relate to materials having photonic, electronic or phononic band gaps, methods of designing such materials, and devices that comprise them.
  • Crystals are materials composed of elements arranged in a repetitive order that confers on the overall structure a wavelike configuration. These "waves" tend to interact with wavelike excitations traversing such structures. For example, propagation of a vibration through such a structure, although not straightforward, can be fully and predictably described (as a phonon) given sufficient knowledge of the wave-structure of the material.
  • Photonic crystals comprise two or more periodically repeating dielectric materials with which photons (i.e., electromagnetic waves, which is the more straightforward choice of name for the wave/particle duality in this context) interact according to the laws of refraction that apply to electromagnetic waves according to Maxwell's equations. Photonic crystals have numerous applications as efficient radiation sources, sensors and optical computer chips.
  • the invention provides articles of manufacture, and methods of designing and making said articles, wherein the article comprises a plurality of material- elements disposed with respect to one another as a heterostructure preferably in a non- crystalline or quasicrystalline, hyperuniform, isotropic distribution in a condensed or solid state.
  • Articles that embody the invention permit excitations in the form of waves of energy to propagate through them or, depending upon the frequency of the wave and its direction of propagation, prohibit such passage by reflection or trapping.
  • said articles have a complete band gap, preferably TE- and TM-optimized.
  • the article comprises a non-crystalline, hyperuniform heterostructure comprising a plurality of material-elements and a complete band gap.
  • said heterostructure is derived from a hyperuniform pattern of points.
  • said point-pattern comprises a plurality of points disposed in a plane.
  • said point-pattern comprises a plurality of points disposed in a d- dimensional space to create a d-dimensional point-pattern.
  • said heterostructure is a polygonal heterostructure.
  • said heterostructure is a polygonal heterostructure having an azimuthal symmetry.
  • said heterostructure is a polyhedral heterostructure.
  • said heterostructure exhibits a quasicrystalline symmetry.
  • said heterostructure comprises material-elements arranged with a long-range order.
  • heterostructure comprises disordered material-elements.
  • said heterostructure comprises disordered material-elements.
  • heterostructure is translationally isotropic.
  • said heterostructure is rotationally isotropic.
  • said material-elements of said heterostructure comprise a lattice, said lattice comprising a plurality of polygonal cells, wherein a plurality of intersecting lines defines said polygonal cells, said lines define cell-edges, said intersections define vertices, and each said cell defines therein a polygonal cell-space.
  • said lattice comprises a plurality of polyhedral cells, wherein said plurality of intersecting lines defines said polyhedral cells, wherein each said cell comprises a plurality of faces, a plurality of vertices and defines therein a polyhedral cell-space.
  • said edges, faces and vertices have disposed thereon a first material-element, and said cell-spaces are filled with a second material-element.
  • said first material-element has a higher dielectric constant than said second material element.
  • said first material-element comprises silicon
  • said second material-element comprises air.
  • said first material-element is disposed on said edges or said faces at finite thickness and each said vertex is coincident with a centroid of a cylinder having a finite thickness and a finite radius.
  • the invention provides a method of making a hyperuniform heterostructure having a complete band gap comprising the steps of:
  • said plurality of lines defines a plurality of edges or faces having vertices
  • said plurality of edges or faces defines a super-cell having therein a cell-space
  • each said super-cell surrounds an unique point in said first point-pattern
  • said first point-pattern of said method comprises vertices of a
  • said first point-pattern of said method has a parameter ⁇ that determines a fraction of wavenumbers k within a Brillouin zone for which the structure factor S(k) is set equal to zero such that, as ⁇ increases, kc increases until ⁇ reaches a critical value ⁇ c, beyond which said disordered pattern attains a long-range translational order.
  • said first material-element of said method has a higher dielectric constant than said second material element.
  • said first material- element comprises silicon
  • said second material-element comprises air.
  • said first material-element is disposed on said edges or faces at a finite thickness and each said vertex is coincident with a centroid of a cylinder having a finite thickness and a finite radius.
  • said centroid point-pattern exhibits a number variance N R 2 ) - (N R ) oc R p , within a spherical sampling window of radius R, wherein p ⁇ d.
  • FIG. 1 provides point-patterns and diffraction images of the scattering function S(k) for structures having (a) an isotropic but non-hyperuniform distribution of scattering elements, (b) an isotropic, hyperuniform but disordered distribution, and (c) an anisotropic, hyperuniform distribution with five-fold symmetry (a quasicrystalline pattern).
  • FIG. 2 shows a map in two dimensions of a photonic structure built up from a hyperuniform point-pattern.
  • FIG. 3 shows a map in two dimensions of a quasicrystalline photonic structure with five- fold symmetry (left panel) and the fractional band gaps ( ⁇ / ⁇ c ) therein (as a function of the number of scattering elements) for TM-blocking (circles), TE-blocking (squares) and complete blocking.
  • FIG. 4 shows a map in two dimensions of a disordered hyperuniform photonic structure optimized for a complete band gap (left panel) and a graph showing how the TM, TE and complete band gaps behave as a function of ⁇ .
  • FIG. 5 shows a prior art representation of an optimal photonic crystal. Upper left panel shows a tessellation in two dimensions of the cells of the crystal; upper right panel shows its diffraction pattern and the graph depicts the structure of the crystal in terms of its band gaps.
  • FIG. 6 shows a representation (tessellation, diffraction pattern and band gap structure) of a hyperuniform structure having sufficient translational periodicity to confer on it the five-fold symmetry of a quasicrystal.
  • FIG. 7 shows a representation (tessellation, diffraction pattern and band gap structure) of a disordered hyperuniform structure optimized for ⁇ — 0.35.
  • FIG. 10 shows a tessellation map of a disordered hyperuniform point pattern and (in FIG. 10 CONT.) a photograph of an actual heterostructure based on the map, fabricated from a dielectric polymer.
  • FIG. 11 is a photographic image of a pattern made by transmitting microwave radiation through the heterostructure shown in FIG. 10.
  • the concentric ring identified by the arrow arises in the image because of a TE photonic band gap in the structure.
  • a method comprising steps a, b, and c encompasses a method of steps a, b, x, and c, a method of steps a, b, c, and x, as well as a method of steps x, a, b, and c.
  • the term "comprising" when placed before the recitation of steps in a method does not (although it may) require sequential performance of the listed steps, unless the context clearly dictates otherwise.
  • a method comprising steps a, b, and c encompasses, for example, a method of performing steps in the order of a, c, and b; c, b, and a, and c, a, and b, etc.
  • altering and grammatical equivalents as used herein in reference to the level of any substance and/or phenomenon refers to an increase and/or decrease in the quantity of the substance and/or phenomenon, regardless of whether the quantity is determined objectively, and/or subjectively.
  • the increase may be determined subjectively, when a person refers to his subjective perception of pain, etc., for example, or objectively, when a person's observable behavior indicates pain.
  • a constructed “line” herein may be straight, curved, continuous, discontinuous or segmented, signifying connectedness, direction, segregation, etc. as the context so admits.
  • Various geometrical forms such as but not limited to “triangle,” “trihedron,” “box,” “face,” “wall,” “cell,” “locus,” “point,” “centroid,” and “cylinder” are referred to herein. In general, these terms will be used herein within their meaning in Euclidian space or in the Euclidian plane, but may be represented in other spaces by mathematical transformation.
  • space herein encompasses any spaces defined in topology, regardless of dimension.
  • trivalent refers equally to planar triangles and to trihedrons.
  • Translational invariance refers to a condition that may be revealed in a test object (i.e., an object being inspected for the condition) by moving an identical copy of the test object on (or through) the test object along a vector (i.e., in a defined direction), and finding that a defined point (or point pattern) in the copied object is congruent with an infinite discrete set of points in the object. Note that this definition implies, at least with respect to the direction of the vector, an object of infinite size (i.e., having no "edge).
  • compositions are referred to herein as “compositions,” “articles,” or “articles of manufacture” assembled using “material-elements” made of “materials” (e.g., silicon).
  • a given composition may comprise one or more species of material; a “material- element” does not imply that each such element is of only one size, shape, constitution or function.
  • a “crystal” usually refers to a system of bonded atoms arranged in periodically repeating sub-systems ("cells").
  • the term may be used herein more broadly to refer, without limitation, to any assemblage of points, lines, planes, volumes or other elements arranged in a periodic manner. Such elements may be geometrical abstractions ("points") or they may comprise actual physical material.
  • the periodically arranged elements are disposed in relation to one another in the form of a latticework.
  • the "points" comprising the latticework are occupied by atoms chemically bonded to one another at the vertices of the faces of the lattice and the electron "cloud” associated with each such atom accounts, collectively, for the interference with the passage of electromagnetic energy (e.g., X-rays) through the lattice.
  • electromagnetic energy e.g., X-rays
  • Such lattices may have two-, three- or n-dimensions, and may be treated as being infinite: that is, having indefinite boundaries that encompass an essentially infinite number of cells.
  • a particularly useful primitive cell for analytical purposes is the so-called "Wigner-Seitz” cell, found by identifying, for a selected vertex point, the set (or “locus") of vertex points in the lattice that are closer to the selected point than to any of the other points in the lattice. These points are in the "neighborhood” or “point-neighborhood” of the selected point (triangles having a vertex at a selected point are in the selected point's "triangle neighborhood”).
  • a plurality of such cells can be assembled without “gaps" in between, or “overlaps,” (i.e., the cells are "tessellated") and the result maps the overall structure of the lattice.
  • X-rays electromagnetic field-wave
  • the pattern is not an image of the crystal but it is the reciprocal of such an image. It is the crystal lattice in "reciprocal space.” From it, one can construct a primitive cell that captures (the reciprocal of) the lattice structure of the entire crystal. This primitive cell is called the "first Brillouin zone" (or, for practical purposes, simply the "Brillouin zone”).
  • a "photonic crystal” affects the passage of photons (i.e., electromagnetic waves) in particular by virtue of interfaces that occur periodically between two or more materials comprising the crystal. Because the materials have different refractive indices, light passing from one material into the other at an interface between them slows down (or speeds up), which bends the path of the light.
  • the ensemble of such interfaces in a photonic crystal behaves collectively as if distributed in a latticework of points that scatter light. Light of a certain wavelength (or, more precisely, within a certain range or "band" of wavelengths) entering such a crystal in a certain direction may or may not traverse the crystal depending upon how it is refracted.
  • a light wave is an electromagnetic excitation that oscillates in a plane (see infra), its traversal also depends upon the orientation of the plane in which the wave is traveling.
  • Light is an electromagnetic wave of energy produced by oscillating charges or magnets. In a vacuum, the wave propagates at 300,000 kilometers per second along a straight line called the propagation direction, hi a dielectric material, it travels at a speed reduced by a factor "n,” known as the refractive index. In a dielectric heterostructure, light moves through a heterogeneous mixture of materials with different dielectric constants and, hence, different light speeds.
  • the electric field oscillates along an axis perpendicular to the propagation direction and a magnetic field propagates along an axis perpendicular to the electric field axis and the propagation direction.
  • Light is called linearly polarized if the electric field axis is oriented in the same direction all along the wave.
  • the axis of electric field axis oscillation is called the polarization or polarization direction.
  • light waves propagating in a certain direction can be decomposed into a combination of two independent polarizations, conventionally chosen to be perpendicular to one another (and the propogating direction).
  • Light coming from a source can be polarized, which means a majority of light waves traveling in the same direction will have the same axis of electric field oscillation. Alternatively, it may contain an equal mixture of light with both
  • TM or TM polarization or TM polarized light In two dimensional photonic materials (or three-dimensional photonic materials with azimuthal symmetry), the material is used in such a way that light propagates along the two- dimensions (or in the plane perpendicular to the azimuthal direction).
  • the polarization direction which must be perpendicular to the propagation direction, may be purely in the azimuthal direction; this is called TM or TM polarization or TM polarized light.
  • the polarization direction may be in the two dimensional plane (and perpendicular to the propagation direction); this is called TE or TE polarized light.
  • the light may also contain a mixture of TM and TE polarized light.
  • TE TE polarized light
  • the same nomenclature is used to refer to two independent polarizations in three-dimensional photonic materials without azimuthal symmetry.
  • electromagnetic waves e.g., light waves
  • the composition may permit one or more distinct ranges, or "bands,” of frequencies to pass through while prohibiting electromagnetic energy in other states from completely traversing it. These prohibited ranges define “band gaps” in the composition. It is not intended that the terms "band” and “band gap” herein have reference solely to electromagnetic waves.
  • Energy be it electromagnetic, electronic, acoustic, or otherwise, can exist in a composition only in certain states
  • the energy may, without limitation, be photonic (affected by electrical insulators, i.e., dielectric "obstacles"), electronic (affected by electrons transiently associated with atomic nuclei in a material), acoustic (affected by the mass of constrained but elastically vibrating atoms or "phonons"), or even a surface wave on a body of water (affected by macroscopic objects in its path) (Jeong et al. , Applied Physics Letters 85:1645-1647, 2004).
  • photonic band gaps do not exclude all lightwaves, only those of certain wavelengths traveling in certain directions and in certain modes.
  • a "complete band gap,” as the term is used herein, is a band gap that prohibits the passage of both TE-mode polarized and TM-mode polarized light.
  • Complete band gaps are not necessarily equally proficient at blocking light travel in each mode. For example, a given complete band gap may prohibit TE-polarized light robustly, and TM-polarized light weakly.
  • the band gap although complete, is not "optimized."
  • the excluded range of frequencies for the TE- mode is generally substantially different from the excluded range of frequencies for the TM- mode, so the bandgap is complete only where the two ranges intersect, i.e., in the range where both polarizations are excluded.
  • Preferred embodiments of the present invention permit the construction of optimal complete band gaps in heterostructures.
  • Energy is carried in an electromagnetic wave or oscillating "field” in one direction indefinitely at the speed of light (in a vacuum) until the wave encounters an object that reflects it, absorbs it, delays it (as in “refraction”), or distorts it (as in "diffraction").
  • Electromagnetic waves can also interact ("interfere") with one another, additively to increase amplitude, or subtractively to extinguish all amplitude.
  • the amount of electromagnetic energy that impinges on an object in any given period of time depends on how many waves (counted by their "crests,” for example) reach the object during that period ("frequency") and the height of the wave (the "amplitude'). Short wavelengths mean high frequency, which, for a given amplitude, means more energy. Thus, electromagnetic energy can be denominated as frequency or as the number of waves that pass through a given space at a given speed ("wavenumber"). It is to be noted that since waves have both speed (or magnitude) and direction, they are vectors, symbolized herein by the bolded letter k. The magnitude of k is
  • the invention provides a map having a two dimensional point-pattern. In some embodiments, the invention provides a map having a three-dimensional point-pattern.
  • the patterns or maps are accessible for use in a computer.
  • the structures they represent may be unbounded (to the extent computers permit).
  • the point-pattern is two-dimensional and has definable within it a completely convex (typically circular) "sampling window" of radius R that may be varied in size.
  • the point-pattern is three- dimensional and has definable within it a completely convex (typically spherical) window. It is not intended that embodiments be limited to two or three dimensions.
  • One-dimensional and n-dimensional point-patterns are also contemplated.
  • the "structure factor" of a structure relates to the "order" that the points of interest collectively assume in a structure under one or another condition, in the sense that the structure factor is a measure of the probability that the structure will scatter a wave of wavenumber k, which probability, in turn, is affected by the arrangement of the scatter-points in the structure.
  • a structure factor may also be referred to as a "structure function," “power spectrum,” “power density spectrum” or "S(It)”.
  • the "order" of a point-pattern in a structure relates herein to a property exhibited by a population of points arranged or distributed in an array along a line, or in n-dimensional space.
  • That property may be measured in terms of "number variance.”
  • point-density e.g., points/unit volume.
  • the number variance in the observed point-density will vary in a way that depends upon how the points in the population are ordered.
  • the increase in the volume of the observation window and the increase in number variance will be equal. If distributed hyperuniformly, the increase in number variance will grow only as a fraction of the increase in the volume.
  • a crystal is an example of a physical system comprising points that scatter impinging radiation ("scatter- points").
  • the radiation that scatters from the crystal depends on the crystal's structure function which, in turn, depends on the extent to which - and the manner in which - the density of scatter-points fluctuates through the crystal.
  • Homogeneous or “uniform” order refers to structures whose point-density fluctuations are statistically the same from sample-to-sample.
  • the variance of any statistically homogeneous, isotropic point pattern grows more slowly than the window's volume grows, but cannot grow more slowly than the window's surface grows.
  • the number variance of a hyperuniform point pattern grows more slowly than the window's volume— by a fraction that is strictly less than one.
  • (N R >— (N R ) AR P , where the brackets refer to averages over many independent sampling windows of radius R.
  • the relation determines the number variance in an average window of radius R (N R being the number of points lying within the window), where p>d-l andp ⁇ d. This means that the number variance must grow more slowly than the volume of the window in three dimensions (that is, 2 ⁇ p ⁇ 3), or more slowly than the surface area of the window in two dimensions (l ⁇ p ⁇ 2). For example, it is common forp to be equal to 2 or 1 in three or two dimensions, respectively.
  • the test for hyperuniformity in point-patterns is provided in greater detail by Torquato et ⁇ l. in Phys. Rev. E 68: 41113, 2003.
  • the proportionality constant A for the relation above determines the degree of
  • the system quantity ⁇ is the ratio of the number of constrained degrees of freedom to the total number of degrees of freedom in the system. Essentially, it equals the fraction of wavenumbers k within the Brillouin zone that are set to zero.
  • ⁇ c dimension-dependent critical value
  • embodiments of the invention provide methods of designing structures of use in emitting, transmitting, amplifying, detecting and modulating energy or energy quanta.
  • the methods apply in particular to designing structures that emit, transmit, amplify, detect or modulate quanta of light (i.e., photons) or the equivalent thereof in the form of electromagnetic waves.
  • the methods are applicable especially to structures that can be assembled without the degree of precision required by structures that rely on periodicity (e.g., crystals) to impart their effects on photons or, more pertinently in the present context, electromagnetic waves.
  • Structures that affect the passage of light therethrough generally comprise elements that scatter light. These elements form a variety of geometric patterns that can be represented diagrammatically as collections of points or "scatter-points.” Light that passes through a given collection of scatter-points, whether it arises from outside the structure or from within the structure, forms a diffraction pattern when it emerges. The diffraction pattern is a function of the geometric scatter-point pattern, as illustrated in FIG. 1.
  • Hyperuniform patterns can be translationally disordered or ordered, and isotropic or anisotropic.
  • Regular (periodic) crystals which are anisotropic and translationally disordered, are hyperuniform by the criterion defined above.
  • quasicrystals also qualify. Although quasicrystals are aperiodic in the sense that they lack periodic translational symmetry in real space, their diffraction patterns (i.e., their reciprocal lattices) are consistent with periodicity.
  • the diffraction patterns consist of Bragg peaks, and their number variance and S(k) are consistent with the definition of hyperuniformity..
  • FIG. 6 An example of a quasiperiodic crystal having fivefold symmetry and a hyperuniform structure is provided in panel C of FIG 1 and in FIG. 6.
  • Point-patterns that conform to a Poisson (i.e., random) distribution are not periodic and are not hyperuniform.
  • some disordered (and non-periodic) point patterns reflected in certain embodiments of the present invention, are hyperuniform.
  • a prime objective in designing photonic crystals is to build into them complete photonic band gaps. The ability to manipulate the flow of light depends on such band gaps. It has generally been thought that the periodic nature of crystals is a determinant of their ability to accommodate complete photonic band gaps.
  • embodiments of the invention provide articles comprising arrangements of structural elements that need not confer periodicity on the composition to provide complete photonic band gaps in the composition.
  • embodiments of the invention include any article of manufacture that relies on a complete photonic, phononic or electronic band gap for functionality, and is non-crystalline (i.e., non-periodic) but is "disordered/hyperuniform.”
  • a complete photonic, phononic or electronic band gap for functionality
  • is non-crystalline i.e., non-periodic
  • is disordered/hyperuniform to make any such article, one proceeds according to the guidance that the prior art provides for making the periodic version of the article, but simply substitutes a disordered/hyperuniform non-crystalline pattern.
  • U.S. Patent No. 6,869,330 to Gee et al. discloses a method for fabricating a photonic crystal from tungsten for use in an incandescent lamp having improved efficiency.
  • a mold is fashioned lithographically in a silicon substrate according to a pattern dictated by a photolithographic etch mask.
  • the pattern in the mask is characterized by a periodicity but, according to the instant invention, may be characterized by the disordered/hyperuniform criterion instead, thereby producing a non-crystalline incandescent emitter having improved efficiency compared to conventional tungsten filaments.
  • U.S. Patent No. 6,468,823 to Scherer et al. discloses a method by which devices that comprise photonic crystals (such as waveguides, microcavities, filters, resonators, lasers, switches, and modulators) can be made using a two-dimensional photonic crystal structure.
  • the structure is based on patterning by means of mask lithography. Again, by laying out the patterning such that the disordered/hyperuniform condition is achieved, the present invention may be embodied in waveguides, microcavities, filters, resonators, lasers, switches, modulators, etc. Three-dimensional photonic crystals can also be fabricated by lithography.
  • U.S. Patent 7,588,882 to Romanato et al is exemplary. Again, the present invention may be embodied in devices such as those noted in Romanato et al by substituting a disordered/hyperuniform non-crystalline pattern for the conventional crystalline pattern.
  • Disordered/hyperuniform non-crystalline versions of selective band-pass filters and photovoltaic solar cells are also within the scope of the invention and can be made for the X- ray, ultraviolet, visible, infrared and microwave electromagnetic radiation regimes using, for example, the layer growth techniques set forth in U.S. Patent No. 6,064,511 to Fortmann et al.
  • hydrogen radical beams are directed onto a substrate through a plurality of collimators laid out in a desired pattern, which pattern may be disordered/hyperuniform.
  • the acoustic regime is also susceptible to manipulation in disordered/hyperuniform structures having a phononic band gap.
  • Mohammadi et al describes a method of making a so-called "phononic crystal” that prohibits passage therethrough of wave-mechanical energy of certain wavelengths.
  • Electronic band gaps can also be fabricated in amorphous (non-crystalline) silicon, advantageously by implantating self-ions into crystalline silicon (Laaziri et al. Physical Review Letters 1999, 82:3460-3463).
  • the electronic regime may also be subject to manipulation in disordered/hyperuniform structures.
  • non-periodic structures having complete band gaps built into them constitute a new class of materials, some of which may be at least as useful as many periodic structures: the band gaps of the non-periodic (i.e., translationally disordered) structures can be sizeable; their accessibility is not subject to rotational symmetry limitations (they are rotationally isotropic); and constraints on the placement of defects to control the flow of light are relaxed.
  • Attainable band gap sizes are more than about 5%, preferably more than about 10%, and more preferably more than about 20% (where ⁇ is the "width" of the band gap, i.e., the range of prohibited wave frequencies, and ⁇ c is the midpoint of that range).
  • the invention provides a heterostructure having high dielectric contrast, hi one embodiment, the heterostructure comprises silicon and air.
  • Non-limiting alternatives to silicon include alumina, tungsten, etc.
  • the "collective coordinate" protocol from Batten et al. (2008) enables one to create a large class of tailored hyperuniform point patterns by using a large class of targeted functional forms for the structure factor S(k).
  • the algorithm Given a target structure factor S(k) corresponding to a desired hyperuniform point pattern, the algorithm starts with an initial arbitrary configuration of points within a simulation box. Successive configurations of points are then sequentially moved according to an optimization technique that in the final steps results in the targeted structure factor.
  • An example of a class of hyperuniform point patterns that can be used to make disordered hetero structures are "stealth" point patterns.
  • Such patterns have a structure factor S(k) that is precisely equal to zero for all
  • Such structures are referred to as "stealthy" because they completely suppress scattering for
  • kc is above some threshold value, the disordered heterostructure derived from these stealthy patterns will have a complete band gap. By tuning kc, one can increase the size of the band gap to sizes comparable to some photonic crystals.
  • the method utilizes an inverse approach: one prescribes scattering characteristics (e.g., absolute transparency) and constructs many-body configurations that give rise to these targeted characteristics.
  • scattering characteristics e.g., absolute transparency
  • constructs many-body configurations that give rise to these targeted characteristics.
  • Stepth materials refer to many-particle configurations that completely suppress scattering of incident radiation for a set of wave vectors, and thus, are transparent at these wavelengths.
  • Periodic (i.e., crystalline) configurations are, by definition, “stealthy” since they suppress scattering for all wavelengths except those associated with Bragg scattering. The method discussed here, however, constructs disordered stealth configurations that prevent scattering only at prescribed wavelengths with no restrictions on any other wavelengths.
  • pair information in real space via the pair correlation function g 2 (r) and in reciprocal space through the structure factor S(K) as these functions are experimentally accessible and used widely in many-body theories.
  • the pair correlation function is the normalized two-particle probability density function p 2 (r) and is proportional to the probability of observing a particle center at r relative to a particle at the origin.
  • the pair correlation function depends only on the magnitude of r ⁇
  • , the structure factor ⁇ k) is related to the Fourier transformation of g 2 (r)-l, ignoring the forward scattering associated with k 0,
  • the method has the advantage of targeting pair information in reciprocal space to construct configurations whose structure factor exactly matches the candidate structure factor for a set of wavelengths.
  • the procedure guarantees that the resulting
  • the numerical optimization procedure follows that of Uche, Stillinger and Torquato, Phys. Rev. E 74, 031104 (2006) used to tailor the small k behavior of the structure factor.
  • the structure factor S(k) and collective coordinates p(k), defined in Eqs. Ml and M2, are related to the quantity C(k),
  • the infinite set of corresponding wave vectors has components
  • the set of wave vectors are
  • F(A:) a "square mound" F(A:), i.e., a function that is a positive constant V 0 for all keQ, where Q is the set of wave vectors such that 0 ⁇
  • F(A:) a function that is a positive constant V 0 for all keQ, where Q is the set of wave vectors such that 0 ⁇
  • this corresponds to a system of particles interacting via a real-space pair potential function that is bounded, damped, and oscillating about zero at large r.
  • V(k) may be chosen so that there is strong repulsion in v(r), for small r.
  • M(K) is the number of independently constrained collective coordinates. That is,
  • Equation Ml 1 has a global minimum of zero, for ⁇ l, if and only if there exist configurations that satisfy all of the imposed constraints. Minimizing Eq. Ml 1 is used to construct super-ideal gases and equi- luminous materials as ground-state configurations.
  • the program When far from the solution, the program chooses a gradient direction, but when close to the solution, it chooses a quasi-Newton direction (Dennis and Mei, J. Optim. Theory Appl. 28: 453, 1979; Kaufman, SIAM J. Optim. 10: 56, 1999). Upon each iteration, the program makes an appropriate update to approximate the Hessian (Kaufman, SIAM J. Optim. 10: 56, 1999).
  • a photonic band gap structure may be computed for "stealthy" structures, including but not limited to non-crystalline structures, as follows: After selecting and plotting a point pattern with the desired rotational symmetry and translational order, the next step is to determine the arrangement of dielectric materials around the selected point pattern that will produce the largest complete band gap.
  • the applicants present herein a novel method for transforming the selected point pattern, whether crystal, quasicrystal or disordered hyperuniform, into a tessellation of cells with the selected translational and rotational symmetry but having a nearly optimal photonic band gap structure (with band gaps within a per cent or less of absolute optimal). Because the procedure requires varying over only two degrees of freedom, the protocol uses much less
  • the invention provides a method, beginning from the disordered hyperuniform point pattern of open circles shown in FIG. 2, as discussed below.
  • the vertices of the trihedral network of cell walls may be decorated with circular cylinders (black circles in FIG. 2) of radius r.
  • the optimal complete band gap may be achieved by varying the only two free parameters, the cell wall thickness w and the circular cylinder radius r.
  • the optimized band gap is equivalent to the fundamental band gap in periodic systems, where n B is the band gap number and N is the number of points per unit cell.
  • ⁇ 11.56
  • N the number of points per unit cell
  • the simulated gap width remains essentially constant as N varies between 100 and 500 (FIG. 3).
  • One may conveniently use a length scale a hNn, such that all patterns have the same point density I/a 2 .
  • a significant band gap begins to open for sufficiently large ⁇ ⁇ 0.35 (but well below ⁇ c ), at a value where there emerges a finite exclusion zone between neighbouring points in the real space hyperaniform pattern (FIGS. 4 and 7).
  • FIG. 5 shows the "layout" of an optimal photonic crystal structure
  • the band gap structure plot represents how the energy (or frequency) of a photonic state ( ⁇ ) varies with incident angle (the x-axis). Instead of showing angle explicitly, the convention of indicating how close the incident angle is to one symmetry axis or another is followed; the symmetry axes are labelled Y, K, M, and then another Y symmetry axis. For a square lattice, for example, this would show how the energy varies depending on how close the incident angle comes to hitting an edge or corner directly. The bottom curve shows, for example, that the energy varies substantially.
  • one may obtain a sequence of periodic approximants of a Penrose tiling pattern (or other purely random structure) of size L by replacing the golden mean in expressions for the lattice vectors and dot products by a ratio of integers, p - F n+ JFn (1/1, 2/1, 3/2, 5/3), where F n is the nth Fibonacci number.
  • the TM band gap is ⁇ I ⁇ c - 37.6% (where ⁇ is the gap width and ⁇ c is the value of the frequency at the midpoint of the gap), consistent with what has been previously reported (Rechtsman et al, Phys. Rev. Lett. 101 : 73902, 2008).
  • ⁇ the gap width
  • ⁇ c the value of the frequency at the midpoint of the gap
  • the calculated TE band gap in this example is the largest ever reported for a quasicrystal lattice.
  • the band gap results shown in FIG. 6 were obtained by means of a supercell approximation and a plane- wave expansion formalism.
  • the process of finding the optimum complete band gap includes convergence tests for dependence on system size, as illustrated by the plot in
  • FIG. 6 Although not intended to be limiting, the resulting structure in this example displays a calculated complete (TM and TE) photonic band gap of 16.5%—the first complete band gap ever reported for a photonic quasicrystal with five fold symmetry and comparable to the largest band gap (20%) found for photonic crystals with the same dielectric contrast.
  • photonic crystals have larger complete band gaps (FIG. 5)
  • quasicrystalline and disordered hyperuniform PBG materials offer advantages for many applications. First, both are significantly more isotropic, which is advantageous for use as highly-efficient isotropic thermal radiation sources and waveguides with arbitrary bending angle. Second, the properties of defects and channels useful for controlling the flow of light are different for crystal, quasicrystal and disordered structures.
  • Quasicrystals like crystals, have a unique, reproducible band structure; by contrast, the band gaps for the disordered structures have some modest random variation for different point distributions.
  • photonic band gap structures constructed around disordered hyperuniform patterns can provide a flexible optical insulator platform for planar optical circuits.
  • eventual fabrication flaws that could seriously degrade the optical characteristics of photonic crystals and perhaps quasicrystals are likely to have less effect on disordered hyperuniform structures, therefore relaxing the fabrication constraints.
  • FIG. 10 a photograph of a physical realization of a hyperuniform disordered photonic structure is presented (FIG. 10 CONT.). It was constructed from the tessellated point-pattern shown first in FIG. 10. The point-pattern and the layout of the cylinders in the tessellation of the point-pattern was developed according to the guidance provided
  • the hyperuniform disordered photonic structure was fabricated by
  • WaterClear Ultra 10122 TM (3D Systems ® ) may also be used.
  • the fabricated heterostructure is macroscopic, but the design can be miniaturized, e.g., for nanoparticles or other particles.
  • laser tweezers can be used for particle trapping or two-photon polymerization can be used.
  • Such methods allow construction of a matrix of dielectric components with a photonic bandgap in the visible. Transmission measurements for the heterostructure of FIG. 10 can be made with a HP
  • Model 8510C Vector Analyzer in three bands from 8 to 15, from 15 to 26 and from 26 to 42 GHz.
  • a single TEi 0 mode is coupled through two sets of horn- attached waveguides with two custom-made polystyrene microwave lenses.
  • the transmission spectrum of the setup is recorded for normalization.
  • An image formed by microwaves transmitted through the structure in the photograph in FIG. 10 is reproduced in FIG 11.
  • the arrow-point identifies a TE band gap in the structure.
  • Materials that confer higher dielectric contrast on the structure than the polymer material employed here are used to open a complete band-gap in the structure.
  • the structure is scaled down.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Combustion & Propulsion (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention porte sur un article manufacturé et sur des procédés de conception et de fabrication de l'article. L'article permet ou interdit la propagation à travers lui d'ondes d'énergie, en particulier d'énergie photonique/électromagnétique, selon les bandes interdites d'énergie incorporées dans celui-ci. La structure de l'article peut être réduite à une configuration de points ayant une distribution hyper-uniforme. La configuration de points peut présenter une symétrie cristalline, une symétrie quasi-cristalline ou peut être apériodique. Dans certains modes de réalisation, la configuration de points ne présente pas d'ordre à grande distance. De préférence, la configuration de points est isotrope. Dans tous les modes de réalisation, l'article possède une bande interdite optimisée TE et TM complète. Les extraordinaires phénomènes de transmission découverts dans les structures photoniques hyper-uniformes désordonnées de l'invention trouvent une utilisation dans les microcircuits optiques (commutation tout optique, électronique ou thermique de la transmission), la détection optique en champ proche, les dispositifs thermophotovoltaïques et les sources incandescentes efficaces en énergie.
PCT/US2010/039516 2009-06-22 2010-06-22 Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes WO2011005530A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP10797577.3A EP2445986A4 (fr) 2009-06-22 2010-06-22 Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes
US13/379,740 US9207357B2 (en) 2009-06-22 2010-06-22 Non-crystalline materials having complete photonic, electronic, or phononic band gaps
JP2012516382A JP2012530945A (ja) 2009-06-22 2010-06-22 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料
US14/350,713 US9465141B2 (en) 2009-06-22 2012-09-17 Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
US14/953,652 US9461203B2 (en) 2009-06-22 2015-11-30 Non-crystalline materials having complete photonic, electronic or phononic bandgaps
US15/280,150 US10175389B2 (en) 2009-06-22 2016-09-29 Non-crystalline materials having complete photonic, electronic or phononic band gaps

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26926809P 2009-06-22 2009-06-22
US61/269,268 2009-06-22

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US13/379,740 A-371-Of-International US9207357B2 (en) 2009-06-22 2010-06-22 Non-crystalline materials having complete photonic, electronic, or phononic band gaps
US14/350,713 Continuation US9465141B2 (en) 2009-06-22 2012-09-17 Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
US14/953,652 Division US9461203B2 (en) 2009-06-22 2015-11-30 Non-crystalline materials having complete photonic, electronic or phononic bandgaps

Publications (2)

Publication Number Publication Date
WO2011005530A2 true WO2011005530A2 (fr) 2011-01-13
WO2011005530A3 WO2011005530A3 (fr) 2011-04-21

Family

ID=43429768

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/039516 WO2011005530A2 (fr) 2009-06-22 2010-06-22 Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes

Country Status (4)

Country Link
US (6) US9207357B2 (fr)
EP (1) EP2445986A4 (fr)
JP (2) JP2012530945A (fr)
WO (1) WO2011005530A2 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013015906A2 (fr) * 2011-07-27 2013-01-31 Massachusetts Institute Of Technology Cristaux photoniques à composé à 2 motifs dotés d'un grande largeur de bande interdite photonique complète
WO2013055503A1 (fr) * 2011-10-14 2013-04-18 The Trustees Of Princeton University Filtres et diviseurs à fréquence de bande étroite, capteurs photoniques et cavités ayant des modes de cavité présélectionnés
US9465141B2 (en) 2009-06-22 2016-10-11 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
DE102018121826A1 (de) * 2018-09-07 2020-03-12 Airbus Defence and Space GmbH Vorrichtung zum Filtern von elektromagnetischer Strahlung, Luft- und Raumfahrzeug und Verfahren zum Herstellen der Vorrichtung
CN112687251A (zh) * 2019-12-11 2021-04-20 南京光声超构材料研究院有限公司 带隙可调的拉胀声子晶体、应用及减振装置
US11454740B2 (en) 2016-02-02 2022-09-27 University Of Surrey Composition comprising a three-dimensional amorphous trivalent network
US11852781B2 (en) 2011-10-14 2023-12-26 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102650714B (zh) * 2012-01-13 2015-04-08 深圳大学 光子晶体波导t形偏振分束器
US9291297B2 (en) * 2012-12-19 2016-03-22 Elwha Llc Multi-layer phononic crystal thermal insulators
US9519104B1 (en) 2014-03-07 2016-12-13 Etaphase, Inc. Hyperuniform disordered material with perforated resonant structure
US10110306B2 (en) 2015-12-13 2018-10-23 GenXComm, Inc. Interference cancellation methods and apparatus
US10809430B2 (en) * 2016-01-29 2020-10-20 Agency For Science, Technology And Research Polarization device for polarizing electromagnetic waves, methods of forming and operating the same
DE102016105647B4 (de) * 2016-03-28 2021-08-12 Krohne Messtechnik Gmbh Führungselement für eine Antenne und Verfahren zur Herstellung eines solchen Führungselementes
US10257746B2 (en) * 2016-07-16 2019-04-09 GenXComm, Inc. Interference cancellation methods and apparatus
FR3073632B1 (fr) * 2017-11-16 2022-12-16 Paris Sciences Lettres Quartier Latin Structure alveolaire a bande interdite photonique
WO2019156785A1 (fr) 2018-02-06 2019-08-15 Exxonmobil Research And Engineering Company Estimation de fraction/distribution de phase avec analyse de contraste diélectrique
US10670860B2 (en) * 2018-04-30 2020-06-02 The Trustees Of Princeton University Photonic filter bank system and method of use
US11150409B2 (en) 2018-12-27 2021-10-19 GenXComm, Inc. Saw assisted facet etch dicing
CN110176280B (zh) * 2019-05-10 2023-06-06 北京大学深圳研究生院 一种描述材料晶体结构的方法及其应用
WO2021007163A1 (fr) 2019-07-11 2021-01-14 Luminous Computing, Inc. Modulateur de phase à bande interdite photonique, banc de filtres optiques, système de calcul photonique et procédés d'utilisation
US10727945B1 (en) 2019-07-15 2020-07-28 GenXComm, Inc. Efficiently combining multiple taps of an optical filter
CN110673335B (zh) * 2019-09-01 2021-06-22 复旦大学 一种光子晶体分光器件及其设计方法
US11215755B2 (en) 2019-09-19 2022-01-04 GenXComm, Inc. Low loss, polarization-independent, large bandwidth mode converter for edge coupling
KR20220083736A (ko) * 2019-10-18 2022-06-20 캘리포니아 인스티튜트 오브 테크놀로지 메타물질 컬러 분할 기능을 구비한 cmos 컬러 이미지 센서들
US11539394B2 (en) 2019-10-29 2022-12-27 GenXComm, Inc. Self-interference mitigation in in-band full-duplex communication systems
US11733079B2 (en) 2020-05-26 2023-08-22 ExxonMobil Technology and Engineering Company Measuring the flow rate of fluids with dielectric contrast analysis
US11796737B2 (en) 2020-08-10 2023-10-24 GenXComm, Inc. Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits
US11574619B2 (en) * 2020-09-29 2023-02-07 Toyota Motor Engineering & Manufacturing North America, Inc. Acoustic structure for beaming soundwaves
US12001065B1 (en) 2020-11-12 2024-06-04 ORCA Computing Limited Photonics package with tunable liquid crystal lens
CA3234722A1 (fr) 2021-10-25 2023-05-04 Farzad Mokhtari-Koushyar Circuits integres photoniques hybrides pour generateurs de signaux a bruit de phase ultra faible
US12027150B2 (en) * 2022-07-13 2024-07-02 Toyota Motor Engineering & Manufacturing North America, Inc. Beaming sound waves using phononic crystals

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007030196A2 (fr) * 2005-07-08 2007-03-15 The Trustees Of Princeton University Structures quasicristallines et utilisations de celles-ci
US20090101931A1 (en) * 2004-09-22 2009-04-23 Luxtaltek Corporation Light Emitting Diode Structures

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5784400A (en) 1995-02-28 1998-07-21 Massachusetts Institute Of Technology Resonant cavities employing two dimensionally periodic dielectric materials
US5994316A (en) 1996-02-21 1999-11-30 The Immune Response Corporation Method of preparing polynucleotide-carrier complexes for delivery to cells
US6064511A (en) 1998-03-31 2000-05-16 The Research Foundation Of State University Of New York Fabrication methods and structured materials for photonic devices
US6468823B1 (en) 1999-09-30 2002-10-22 California Institute Of Technology Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby
AU2002225765A1 (en) 2000-11-28 2002-06-11 Rosemount, Inc. Arrangement for measuring physical parameters with an optical sensor
JP3743637B2 (ja) * 2001-08-23 2006-02-08 独立行政法人理化学研究所 フォトニック結晶および光導波素子
US6611085B1 (en) 2001-08-27 2003-08-26 Sandia Corporation Photonically engineered incandescent emitter
ITTO20030730A1 (it) 2003-09-23 2005-03-24 Infm Istituto Naz Per La Fisi Ca Della Mater Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.
US7173086B2 (en) 2003-10-31 2007-02-06 Stockhausen, Inc. Superabsorbent polymer with high permeability
US6990259B2 (en) 2004-03-29 2006-01-24 Sru Biosystems, Inc. Photonic crystal defect cavity biosensor
JP4290128B2 (ja) 2005-02-25 2009-07-01 キヤノン株式会社 センサ
JP2006351909A (ja) * 2005-06-17 2006-12-28 Institute Of Physical & Chemical Research フォトニック結晶及びそれを用いた半導体レーザ
US7981774B2 (en) 2005-07-08 2011-07-19 New York University Assembly of quasicrystalline photonic heterostructures
WO2008054283A1 (fr) 2006-11-01 2008-05-08 Smoltek Ab Cristaux photoniques basés sur des nanostructures
JP5063139B2 (ja) * 2007-02-27 2012-10-31 日本航空電子工業株式会社 フォトニック構造体
US8054145B2 (en) 2008-04-30 2011-11-08 Georgia Tech Research Corporation Phononic crystal wave structures
WO2010088585A1 (fr) * 2009-01-30 2010-08-05 Trustees Of Boston University Détecteur chimique/biologique employant des composants chromatiques diffusés dans des surfaces apériodiques à motifs nanoscopiques
EP2445986A4 (fr) 2009-06-22 2017-09-13 The Trustees Of Princeton University Matériaux non cristallins à bandes interdites photonique, électroniques ou phononiques complètes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090101931A1 (en) * 2004-09-22 2009-04-23 Luxtaltek Corporation Light Emitting Diode Structures
WO2007030196A2 (fr) * 2005-07-08 2007-03-15 The Trustees Of Princeton University Structures quasicristallines et utilisations de celles-ci

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FLORESCU M. ET AL.: 'Designer Disordered Materials with Large, Complete Photo nic Band Gaps.' PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES vol. 106, no. 49, 08 December 2009, pages 20658 - 20663, XP008148050 *
ZOOROB M.E. ET AL.: 'Complete Photonic Bandgaps in 12-fold Symmetric Quasicry stals' NATURE vol. 404, 13 April 2000, pages 740 - 743, XP000914814 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465141B2 (en) 2009-06-22 2016-10-11 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
US11086047B2 (en) 2009-06-22 2021-08-10 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
WO2013015906A2 (fr) * 2011-07-27 2013-01-31 Massachusetts Institute Of Technology Cristaux photoniques à composé à 2 motifs dotés d'un grande largeur de bande interdite photonique complète
WO2013015906A3 (fr) * 2011-07-27 2013-07-04 Massachusetts Institute Of Technology Cristaux photoniques à composé à 2 motifs dotés d'un grande largeur de bande interdite photonique complète
US8923661B2 (en) 2011-07-27 2014-12-30 Massachusetts Institute Of Technology 2-pattern compound photonic crystals with a large, complete photonic band gap
WO2013055503A1 (fr) * 2011-10-14 2013-04-18 The Trustees Of Princeton University Filtres et diviseurs à fréquence de bande étroite, capteurs photoniques et cavités ayant des modes de cavité présélectionnés
US11852781B2 (en) 2011-10-14 2023-12-26 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
US11454740B2 (en) 2016-02-02 2022-09-27 University Of Surrey Composition comprising a three-dimensional amorphous trivalent network
DE102018121826A1 (de) * 2018-09-07 2020-03-12 Airbus Defence and Space GmbH Vorrichtung zum Filtern von elektromagnetischer Strahlung, Luft- und Raumfahrzeug und Verfahren zum Herstellen der Vorrichtung
CN112687251A (zh) * 2019-12-11 2021-04-20 南京光声超构材料研究院有限公司 带隙可调的拉胀声子晶体、应用及减振装置
CN112687251B (zh) * 2019-12-11 2024-04-05 南京光声超构材料研究院有限公司 带隙可调的拉胀声子晶体、应用及减振装置

Also Published As

Publication number Publication date
US20140366647A1 (en) 2014-12-18
JP2012530945A (ja) 2012-12-06
US9461203B2 (en) 2016-10-04
US20160377808A1 (en) 2016-12-29
US10175389B2 (en) 2019-01-08
US9465141B2 (en) 2016-10-11
US20160133786A1 (en) 2016-05-12
US20180188418A1 (en) 2018-07-05
WO2011005530A3 (fr) 2011-04-21
JP2015180939A (ja) 2015-10-15
US20170082780A1 (en) 2017-03-23
EP2445986A4 (fr) 2017-09-13
US9885806B2 (en) 2018-02-06
US9207357B2 (en) 2015-12-08
US20120138864A1 (en) 2012-06-07
EP2445986A2 (fr) 2012-05-02
US11086047B2 (en) 2021-08-10

Similar Documents

Publication Publication Date Title
US10175389B2 (en) Non-crystalline materials having complete photonic, electronic or phononic band gaps
Li et al. Fragility of photonic band gaps in inverse-opal photonic crystals
Sainidou et al. Locally resonant phononic crystals made of hollow spheres or cylinders
Colombi et al. Elastic wave control beyond band-gaps: shaping the flow of waves in plates and half-spaces with subwavelength resonant rods
Rong et al. Topology optimization design scheme for broadband non-resonant hyperbolic elastic metamaterials
Zhang et al. Properties of anisotropic photonic band gaps in three-dimensional plasma photonic crystals containing the uniaxial material with different lattices
Tan et al. Simulation on the photonic bandgap of 1-D plasma photonic crystals
WO2011162955A2 (fr) Manipulation et routage de trajets étroits de signaux optiques sur du graphène, et graphène comme plateforme pour métamatériaux
Smith et al. Left-handed metamaterials
CN109416440B (zh) 包括三维无定形三价网络的组合物
Ansari-Oghol-Beig et al. Array integral equation-fast Fourier transform solver for simulation of supercells and aperiodic penetrable metamaterials
Chen et al. Photonic resonant transmission in the quantum-well structure of photonic crystals
Lifante Effective index method for modelling sub-wavelength two-dimensional periodic structures
Li Physical Design of Periodic Structures: from Photonic Crystals to Phononic Crystals
US11733429B2 (en) Controlled design of localized states in photonic quasicrystals
Wei Strong Coupling Between Photonic Cavities
Hafner et al. Simulation and Optimization of Photonic Crystals Using the Multiple Multipole Program
Wang et al. An hp-Adaptive Sampling Algorithm for Dispersion Relation Reconstruction of 3D Photonic Crystals
Ahmed et al. A Numerical Approach to Investigate the Influence of Resonator Setting and Volume Fraction on Stop Bands in an Acoustic Metamaterial
Beig et al. Simulating wave phenomena in large graded-pattern arrays with random perturbation
Belardini et al. Tailoring of the circular dichroism produced by Au covered self-ordered dielectric nanospheres
Hu Multifunctional Metasurface
Ghadbane et al. Simulation of metamaterials negative refractive index
Shen Wave propagation through photonic crystal slabs: Imaging and localization
AKRAY DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10797577

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2012516382

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2010797577

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13379740

Country of ref document: US