WO2011005057A3 - 진공 건조기 및 이를 이용한 건조 방법 - Google Patents

진공 건조기 및 이를 이용한 건조 방법 Download PDF

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Publication number
WO2011005057A3
WO2011005057A3 PCT/KR2010/004486 KR2010004486W WO2011005057A3 WO 2011005057 A3 WO2011005057 A3 WO 2011005057A3 KR 2010004486 W KR2010004486 W KR 2010004486W WO 2011005057 A3 WO2011005057 A3 WO 2011005057A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
drying method
dryer
vacuum chamber
vacuum dryer
Prior art date
Application number
PCT/KR2010/004486
Other languages
English (en)
French (fr)
Other versions
WO2011005057A2 (ko
Inventor
홍성호
노봉호
김성진
김덕호
Original Assignee
에이펫(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이펫(주) filed Critical 에이펫(주)
Priority to JP2012519479A priority Critical patent/JP5501460B2/ja
Publication of WO2011005057A2 publication Critical patent/WO2011005057A2/ko
Publication of WO2011005057A3 publication Critical patent/WO2011005057A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명의 목적은, 건조가 시간이 짧고 얼룩 등이 발생하지 않으며 IPA를 사용하지 않으므로써, 화재 위험을 줄이고 유기 오염이 발생하지 않도록 하는 진공건조기 및 이를 이용한 건조방법을 제공하는 것이다. 본 발명은 덮개부분에 디스펜서 노즐이 형성되고 하부에 가스가 배출되는 배출구가 형성되어 있는 진공챔버; 상기 진공챔버 내에 위치하여 복수의 웨이퍼 또는 디스크가 배열되도록 하는 스탠드; 및 상기 진공챔버 내에 상기 스탠드와 상기 배출구사이에 위치하며 복수의 홀이 형성되어 있는 펀칭 플레이트를 포함하는 건조기 및 이를 이용한 건조방법을 제공하는 것이다.
PCT/KR2010/004486 2009-07-10 2010-07-09 진공 건조기 및 이를 이용한 건조 방법 WO2011005057A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012519479A JP5501460B2 (ja) 2009-07-10 2010-07-09 真空乾燥機およびこれを用いた乾燥方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0063082 2009-07-10
KR1020090063082A KR101238858B1 (ko) 2009-07-10 2009-07-10 진공 건조기 및 이를 이용한 건조 방법

Publications (2)

Publication Number Publication Date
WO2011005057A2 WO2011005057A2 (ko) 2011-01-13
WO2011005057A3 true WO2011005057A3 (ko) 2011-06-03

Family

ID=43429698

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004486 WO2011005057A2 (ko) 2009-07-10 2010-07-09 진공 건조기 및 이를 이용한 건조 방법

Country Status (3)

Country Link
JP (1) JP5501460B2 (ko)
KR (1) KR101238858B1 (ko)
WO (1) WO2011005057A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6318939B2 (ja) * 2014-07-18 2018-05-09 株式会社デンソー 洗浄方法、及び、洗浄装置
CN108132588A (zh) * 2017-12-21 2018-06-08 信利（惠州）智能显示有限公司 一种新型的vcd结构及其匀压方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629278A (ja) * 1992-04-27 1994-02-04 Chuo Riken:Kk 基板洗浄方法及び減圧乾燥装置
JPH0669180A (ja) * 1992-08-13 1994-03-11 Tokyo Hightech Kk 真空乾燥装置
JPH0743066A (ja) * 1993-07-28 1995-02-10 Hitachi Plant Eng & Constr Co Ltd 真空乾燥装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0180344B1 (ko) * 1995-10-18 1999-04-15 김광호 반도체 웨이퍼의 건조장치
KR100464853B1 (ko) * 2002-06-20 2005-01-06 삼성전자주식회사 순간감압가열 건조방법 및 장치
JP2006093740A (ja) * 2002-07-16 2006-04-06 Chem Art Technol:Kk 基板処理方法及び基板処理装置
JP2005166848A (ja) * 2003-12-01 2005-06-23 Ses Co Ltd 基板処理法及び基板処理装置
JP2006324506A (ja) * 2005-05-19 2006-11-30 Shibaura Mechatronics Corp 基板の乾燥処理装置及び乾燥処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629278A (ja) * 1992-04-27 1994-02-04 Chuo Riken:Kk 基板洗浄方法及び減圧乾燥装置
JPH0669180A (ja) * 1992-08-13 1994-03-11 Tokyo Hightech Kk 真空乾燥装置
JPH0743066A (ja) * 1993-07-28 1995-02-10 Hitachi Plant Eng & Constr Co Ltd 真空乾燥装置

Also Published As

Publication number Publication date
KR101238858B1 (ko) 2013-03-04
WO2011005057A2 (ko) 2011-01-13
KR20110005490A (ko) 2011-01-18
JP2012533174A (ja) 2012-12-20
JP5501460B2 (ja) 2014-05-21

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