JP2012533174A - 真空乾燥機およびこれを用いた乾燥方法 - Google Patents
真空乾燥機およびこれを用いた乾燥方法 Download PDFInfo
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- JP2012533174A JP2012533174A JP2012519479A JP2012519479A JP2012533174A JP 2012533174 A JP2012533174 A JP 2012533174A JP 2012519479 A JP2012519479 A JP 2012519479A JP 2012519479 A JP2012519479 A JP 2012519479A JP 2012533174 A JP2012533174 A JP 2012533174A
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- 238000001035 drying Methods 0.000 title claims abstract description 32
- 235000012431 wafers Nutrition 0.000 claims abstract description 38
- 238000004080 punching Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 206010060904 Freezing phenomenon Diseases 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【選択図】図1
Description
Claims (10)
- 蓋部分にディスペンサノズルが形成され、下部にガスが排出される排出口が形成されている真空チャンバと、
前記真空チャンバ内に位置し、複数のウエハまたはディスクが配列されるようにするスタンドと、
前記真空チャンバ内において前記スタンドと前記排出口との間に位置し、複数のホールが形成されているパンチングプレートとを備えることを特徴とする乾燥機。 - 前記複数のホールの直径は、前記複数のウエハまたはディスクの間隔の1/2〜2/3の範囲を有することを特徴とする請求項1に記載の乾燥機。
- 真空チャンバ内に複数のウエハまたはディスクが位置するようにし、前記真空チャンバを封印する第1ステップと、
前記真空チャンバ内のガスを排気し、前記真空チャンバ内の圧力が、水分が気化する直前の圧力である第1気圧と、前記第1気圧よりも低く、前記水分が気化する圧力である第2気圧とを交互に有するようにする第2ステップと、
前記真空チャンバ内の圧力を大気圧になるようにし、前記複数のウエハまたはディスクを前記真空チャンバ内から降ろす第3ステップとを含むことを特徴とする乾燥方法。 - 前記第1圧力は、30〜50Torrであることを特徴とする請求項3に記載の乾燥方法。
- 前記第2圧力は、8〜12Torrであることを特徴とする請求項3に記載の乾燥方法。
- 前記真空チャンバ内の圧力を大気圧以上に加圧した後、瞬間的に前記真空チャンバ内のガスを排気する第4ステップをさらに含むことを特徴とする請求項3に記載の乾燥方法。
- 前記第2ステップにおいて、前記真空チャンバ内に加熱された窒素を注入し、前記真空チャンバ内のウエハまたはディスクの表面に結氷現象を防止することを特徴とする請求項3に記載の乾燥方法。
- 前記真空チャンバ内の圧力は、加熱された窒素を用いて加圧することを特徴とする請求項6に記載の乾燥方法。
- 前記第1ステップにおいて、前記ウエハまたはディスクは、ロボットアームを用いて位置するようにするが、前記ロボットアームにより、ウエハまたはディスクは、洗浄槽から1〜5m/secの速度で動くことを特徴とする請求項3に記載の乾燥方法。
- 前記ロボットアームに窒素ノズルをさらに具備し、前記窒素ノズルから加熱された窒素を前記ウエハまたはディスクに噴射することを特徴とする請求項9に記載の乾燥方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0063082 | 2009-07-10 | ||
KR1020090063082A KR101238858B1 (ko) | 2009-07-10 | 2009-07-10 | 진공 건조기 및 이를 이용한 건조 방법 |
PCT/KR2010/004486 WO2011005057A2 (ko) | 2009-07-10 | 2010-07-09 | 진공 건조기 및 이를 이용한 건조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012533174A true JP2012533174A (ja) | 2012-12-20 |
JP5501460B2 JP5501460B2 (ja) | 2014-05-21 |
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JP2012519479A Active JP5501460B2 (ja) | 2009-07-10 | 2010-07-09 | 真空乾燥機およびこれを用いた乾燥方法 |
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JP (1) | JP5501460B2 (ja) |
KR (1) | KR101238858B1 (ja) |
WO (1) | WO2011005057A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016022414A (ja) * | 2014-07-18 | 2016-02-08 | 株式会社デンソー | 洗浄方法、及び、洗浄装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108132588A (zh) * | 2017-12-21 | 2018-06-08 | 信利(惠州)智能显示有限公司 | 一种新型的vcd结构及其匀压方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669180A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Hightech Kk | 真空乾燥装置 |
JP2005166848A (ja) * | 2003-12-01 | 2005-06-23 | Ses Co Ltd | 基板処理法及び基板処理装置 |
JP2006093740A (ja) * | 2002-07-16 | 2006-04-06 | Chem Art Technol:Kk | 基板処理方法及び基板処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2532324B2 (ja) * | 1992-04-27 | 1996-09-11 | 株式会社中央理研 | 基板洗浄方法及び減圧乾燥装置 |
JPH0743066A (ja) * | 1993-07-28 | 1995-02-10 | Hitachi Plant Eng & Constr Co Ltd | 真空乾燥装置 |
KR0180344B1 (ko) * | 1995-10-18 | 1999-04-15 | 김광호 | 반도체 웨이퍼의 건조장치 |
KR100464853B1 (ko) * | 2002-06-20 | 2005-01-06 | 삼성전자주식회사 | 순간감압가열 건조방법 및 장치 |
JP2006324506A (ja) * | 2005-05-19 | 2006-11-30 | Shibaura Mechatronics Corp | 基板の乾燥処理装置及び乾燥処理方法 |
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2009
- 2009-07-10 KR KR1020090063082A patent/KR101238858B1/ko active IP Right Grant
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2010
- 2010-07-09 JP JP2012519479A patent/JP5501460B2/ja active Active
- 2010-07-09 WO PCT/KR2010/004486 patent/WO2011005057A2/ko active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669180A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Hightech Kk | 真空乾燥装置 |
JP2006093740A (ja) * | 2002-07-16 | 2006-04-06 | Chem Art Technol:Kk | 基板処理方法及び基板処理装置 |
JP2005166848A (ja) * | 2003-12-01 | 2005-06-23 | Ses Co Ltd | 基板処理法及び基板処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016022414A (ja) * | 2014-07-18 | 2016-02-08 | 株式会社デンソー | 洗浄方法、及び、洗浄装置 |
Also Published As
Publication number | Publication date |
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JP5501460B2 (ja) | 2014-05-21 |
WO2011005057A2 (ko) | 2011-01-13 |
KR20110005490A (ko) | 2011-01-18 |
KR101238858B1 (ko) | 2013-03-04 |
WO2011005057A3 (ko) | 2011-06-03 |
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