Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/221—Static displays, e.g. displaying permanent logos
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
  • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• An organic optoelectronic component is specified.
• a method for producing an organic optoelectronic device is specified.
• this has a carrier.
• the carrier serves to mechanically support the component.
• the component can therefore be mechanically stabilized.
• the support may comprise any of the following materials or be made of any of the following materials: glass, glass film, quartz, plastic, plastic film, metal, metal foil, silicon.
• the substrate is completely or partially transparent or translucent for an electromagnetic radiation to be emitted by the component.
• a first electrode is attached to the carrier.
• the first electrode may be in direct, direct contact with the carrier.
• at least one intermediate layer is applied in places or over the entire surface between the carrier and the first electrode.
• a surface property of the carrier may be matched to the first electrode.
• the intermediate layer serves for an adhesion mediation between the carrier and the first electrode.
• a roughness of a surface of the carrier may be reduced via the intermediate layer. If an intermediate layer is present, it is preferably transparent or translucent with respect to the radiation to be emitted by the component.
• the first electrode is permeable to radiation, preferably transparent to the radiation to be emitted by the component.
• the first electrode is designed as an anode.
• the first electrode then serves as a hole injecting material.
• the first electrode consists for example of a transparent conductive oxide. Suitable materials include zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, indium zinc oxide or indium tin oxide.
• the material of the first electrode may have dopants and be at least locally p-doped or n-doped.
• an organic layer sequence is applied to a main side of the first electrode facing away from the carrier.
• the organic layer sequence comprises at least one organic active
• the active layer is designed to generate the electromagnetic radiation to be emitted during operation of the component.
• a wavelength of the radiation is in the spectral range between 200 nm and 3000 nm, preferably between 350 nm and 850 nm. In particular, visible radiation is generated during operation in the active layer.
• the organic layer sequence has, in addition to the at least one organic active layer, at least one charge carrier transport layer and / or one charge carrier injection layer and / or one charge carrier stop layer.
• the organic active layer comprises at least one organic polymer, an organic oligomer, an organic monomer, organic small non-polymeric molecules, or a combination thereof.
• the organic layer sequence is thus located between the first electrode and the second electrode.
• the second electrode is designed as a cathode.
• the second electrode comprises or consists of one of the following materials: aluminum, barium, indium, silver, gold, magnesium, calcium, lithium, steel.
• the second electrode is preferably impermeable and / or reflective for the radiation generated in the organic layer sequence. It is possible that the second electrode, in addition to the carrier, mechanically stabilizes the component.
• this has a radiation passage area.
• Radiation passage area may be a boundary surface of the component, by which the radiation generated in the active layer or a part or a large part of this radiation the component leaves.
• the radiation passage area is formed by a main side of the carrier facing away from the organic layer sequence.
• the radiation passage area can also be realized by an example antireflective coating on this main side of the carrier.
• At least one dark area and at least one bright area are formed in a lateral direction.
• Lateral means in particular along at least one main extension direction of the organic component.
• the bright area is an area of the radiation passage area of the component in which a greater radiation power is emitted per unit area than in the dark area.
• the bright area appears brighter than the dark area during operation of the component.
• the component preferably has a plurality of light areas and a plurality of dark areas. The light areas and the dark areas are in each case contiguous areas of the radiation passage area of the component.
• the first and second electrodes as well as the organic layer sequence are applied to the carrier completely or in places in the at least one dark area as well as in the at least one bright area.
• both the bright region and the dark region with respect to the electrodes and the organic layer sequence have the same components.
• the second electrode and the organic layer sequence in both the bright region and the dark region in the context of Manufacturing tolerances, manufactured identically.
• the first electrode is likewise a layer which extends in particular continuously over the dark region and the light region and has a preferably constant thickness within the scope of the manufacturing tolerances. That is, the structuring of the radiation passage area in light areas and dark areas is not achieved by a shaping or geometric configuration of the first electrode, the second electrode and the organic layer sequence.
• this has a first reflectivity of the dark region.
• the first reflectivity is a reflectance of the radiation passage area in the dark area.
• the component has a second reflectivity of the bright region, which is, for example, a reflectivity of the radiation passage area in the bright region.
• the first reflectivity of the dark region deviates from the second reflectivity of the bright region by at most 15 percentage points, preferably by at most 10 percentage points, in particular by at most 5 percentage points from one another.
• a reflectivity at the radiation passage area in the bright area and a reflectivity at the radiation passage area in the dark area are approximately equal or, preferably, equal within the manufacturing tolerances.
• the reflectivity is, for example, in each case the quotient of an incident radiation power and a reflected, failed radiation power.
• the light output that strikes the radiation passage area is measured and compared with a light output reflected by the radiation passage area.
• the first reflectivity of the dark region is 15%
• the second reflectivity of the bright region is preferably between 10% and 20% inclusive.
• this comprises a carrier and a first electrode which is attached to the carrier. Furthermore, the component contains at least one organic layer sequence with at least one organic active layer. Furthermore, the component has a second electrode, so that the organic layer sequence is located between the first electrode and the second electrode. In a lateral direction, at least one dark area and at least one bright area are formed. Both in the dark region and in the bright region, both the first electrode and the second electrode as well as the organic layer sequence are applied to the carrier in places or over the entire surface. A first reflectivity of the dark area differs from a second reflectivity of the bright area by at most 15 percentage points.
• the at least one bright area and the at least one dark area By the at least one bright area and the at least one dark area, a pattern and / or a label and / or a symbol in the operation of the component can be displayed.
• the bright areas form bright, luminous areas about the pattern. There is a contrast to the bright areas over the darker or darker dark areas. Due to the fact that the first reflectivity of the dark area and the second reflectivity of the bright area are approximately the same, it is possible that about the pattern that is displayed during operation of the component is not visible outside the operation of the component. In other words, with the naked eye on the outside
• Seen component in particular the radiation passage area of the component homogeneous and unstructured act when the component is not operated. That is, outside the operation of the component, the pattern is not recognizable by a viewer.
• a monolayer with self-organizing molecules is applied in the at least one dark region on a main surface of the first electrode facing away from the carrier.
• the monolayer is applied only in the dark area, so that the bright area is free of the monolayer.
• the entire dark area is covered by the monolayer. In other words, dark areas can only be where the organic
• Monolayer preferably means that a layer height of the molecules on the main side is only exactly one molecule. Accordingly, in the monolayer, preferably no identical molecules are superimposed.
• the monolayer is thus located between the first electrode and the organic layer sequence.
• the monolayer can be applied, for example, to the first electrode via a printing process.
• An achievable structure size of the monolayer, in a lateral direction is for example 100 ⁇ m, in particular 25 ⁇ m.
• the Structure size limited only by a spatial resolution of a printing process used for example when creating the monolayer. In other words, very fine patterns of the monolayer can be generated.
• the monolayer is colorless.
• an absorption coefficient and / or a reflection coefficient of the monolayer in the visible spectral range is approximately not dependent on the wavelength.
• the absorption coefficient and / or the reflection coefficient in the spectral range between 470 nm and 650 nm is constant except for a deviation of 10 percentage points, in particular to a deviation of 3 percentage points.
• the absorption coefficient and / or the reflection coefficient in the spectral range between 470 nm and 650 nm is constant except for a deviation of 10 percentage points, in particular to a deviation of 3 percentage points.
• Absoption coefficient between 0% and 10% inclusive, in particular between 0.01% and 3%.
• the monolayer is electrically insulating. In a direction perpendicular to the first electrode, therefore, there is no current flow through the monolayer during operation of the component. If the organic layer sequence has a negligible electrical transverse conductivity, then radiation in the organic layer sequence is produced only in those areas in which no monolayer is applied.
• the monolayer preferably has a breakdown voltage of at least 1 MV / cm, in particular of at least 30 MV / cm, in a direction perpendicular to the first electrode.
• a thickness of the monolayer is, in a direction perpendicular to the first electrode, between inclusive 0.5 nm and 5.0 nm, in particular between 1.0 nm and 3.0 nm.
• the monolayer is thus very thin in comparison to a wavelength of a radiation generated in the organic layer sequence. Therefore, the monolayer affects the optical properties of the component, in particular the optical refractive index, not or only negligible.
• the monolayer is formed with molecules or consists of such molecules which have long aliphatic chains and comprise a phosphate group, silicate group, carbonyl acid group, trichlorosilane group or a similar group as head group.
• the molecules of the monolayer may also include large groups having a conjugated ring system, such as benzene or cyclopentane. Examples of such molecules are 2 [(trimethyloxysily) ethyl] benzene or 3- [2- (trimethyloxysily) ethyl] pyridines.
• the carrier has a roughening on a side facing the layer sequence in the dark region.
• the side of the carrier facing the layer sequence is approximately smooth in the bright region and deliberately rough in the dark region. The roughening is thus between the carrier and the first electrode.
• the radiation passage area in the context of the manufacturing tolerances, in the light area as well as in the dark area, has the same properties, for example with regard to roughness.
• the side of the carrier facing away from the organic layer sequence is not structured.
• an average roughness of the roughening is between 5 nm and 1 ⁇ m, in particular between 20 nm and 500 nm.
• the roughening thus has in particular an average roughness which is less than or equal to a wavelength in the organic Layer sequence generated radiation is.
• the roughening and / or the dark region has a lateral structure size of at least 1 mm, in particular of at least 3 mm.
• the roughening, and thus preferably also the dark area has an extent of at least the stated values in one or in two directions.
• the roughening can thus be formed flat.
• the roughening of the carrier in the dark area is formed by groove-like or channel-like structures having an average mean roughness corresponding average depth. Grooved may mean that an average length exceeds a mean width of the structures at least ten times.
• an intermediate layer is located between the carrier and the first electrode.
• the intermediate layer preferably has a refractive index which deviates from that of the carrier by at most 0.1, in particular by at most 0.05.
• the refractive index of the carrier is 1.50
• the refractive index of the intermediate layer is preferably between 1.45 and 1.55.
• the intermediate layer is an oxide layer, in particular a silicon dioxide layer.
• a thickness of the intermediate layer in a direction perpendicular to the first electrode, is between 10 nm and 200 nm inclusive, in particular between 15 nm and 40 nm inclusive. If the intermediate layer is applied over the roughening, then a Carrier side facing away from the intermediate layer preferably smoother than the carrier in the roughening.
• the average thickness of the intermediate layer may be in the range of the average roughness of the roughening of the carrier.
• an average radiation power per unit area of the at least one dark area is at most 60%, in particular at most 45% of the mean
• Radiation power per unit area of the at least one bright area For example, approximately no radiant power is emitted in the dark region. It is also possible that the radiant power per area of the dark area is between 1% and 60% of that of the bright area, preferably between 2% and 45% inclusive, in particular between 4% and 30% inclusive.
• the carrier is formed with a glass, the first electrode with a conductive transparent oxide and the second electrode with a metal or consist of the materials mentioned.
• the in the organic layer sequence The radiation generated thus passes through the carrier and is emitted, in particular, on a main side of the carrier facing away from the organic layer sequence.
• Component has a main surface of the first electrode, which faces away from the carrier, in the at least one dark area a higher work function than in the at least one bright area.
• the work function is the minimum energy required to carry a charge carrier, such as an electron, from a point within the first electrode to a point outside the surface of the first electrode.
• the work function of the first electrode in the dark region differs from the work function in the light region by at least 0.10 eV, preferably by at least 0.25 eV, in particular by at least 0.40 eV.
• An absolute value of the work function here is preferably between 4.0 eV and 5.0 eV, in particular at about 4.5 eV.
• a modification of the work function is preferably not achieved by applying a separate coating, for example with a thin, in particular monolayer, layer of organic molecules. In other words, the first electrode is then free of such a separate, the work function affecting coating.
• an optoelectronic organic component is specified.
• an optoelectronic organic component can be produced, as described in conjunction with one or more of the abovementioned embodiments.
• Features of the organic optoelectronic device are therefore also disclosed for the method described here and vice versa.
• this comprises the following steps:
• a work function on a main surface of the first electrode facing away from the support is preferably reduced in at least one overlap region in which the zone and the subregion overlap, in comparison to other regions of the first electrode.
• a photoresist is applied to the first electrode, and the
• Photoresist is exposed at least in places. Subsequently, the photoresist is removed, for example after development, wherein the first electrode need not be structured.
• another light-sensitive material for example a photoresist
• the first electrode are structured. It is likewise possible for the second photoresist to be removed again without the first electrode being structured by material removal.
• the at least one bright region is then formed by such a region of the first electrode in which two-fold photosensitive material was applied and removed again and which was not exposed to any exposure of the photosensitive material.
• the work function of the first electrode is degradable. The reduced work function in turn causes the thus treated area appears brighter in the operation of the manufactured component.
• the first electrode is designed with indium tin oxide or consists of indium tin oxide. Further, the photosensitive material and / or the other photosensitive material is removed by ashing with an O 2 plasma and / or by rinsing with a solvent.
• a material of the first electrode is completely or between the step of exposing the further photosensitive material and the step of removing the further photosensitive material in an additional process step outside the sub-area in which the further photosensitive material has not been exposed partially removed.
• the first electrode will pass through one another structured pattern formed by material removal of the first electrode outside the sub-region, for example by etching away.
• At least one bright region is formed by the overlap region in which the subregion and the zone overlap.
• the bright region thus represents at least a region of the first electrode
• Subarea belong to at least one dark area shaped.
• the at least one bright region and the at least one dark region therefore do not differ in a thickness or material composition of the first electrode, but preferably only by a work function on a main side of the first electrode facing away from the carrier.
• the first electrode is formed from indium tin oxide, ITO for short, or consists of ITO. Exposing the photosensitive
• Material and the other photosensitive material is at wavelengths between 240 nm and 380 nm inclusive.
• the photosensitive material is preferred each used a positive photoresist.
• development of both the photosensitive material and the other photosensitive material is preferred.
• the photosensitive materials are completely removed.
• the finished, organic component is then free of the photosensitive materials.
• organic components described here can be used are, for example, the backlighting of displays or display devices. Furthermore, optoelectronic components described here can be used in illumination devices for projection purposes, in headlamps or light emitters or in general lighting.
• FIG. 1 shows a schematic sectional representation of an exemplary embodiment of an organic optoelectronic component described here
• FIG. 2 shows a schematic illustration of a determination of a reflectivity of bright regions and dark regions
• FIGS 3 and 4 are schematic sectional views of further embodiments of organic components described herein.
• Figure 5 is a schematic representation of an embodiment of one described here
• FIG. 1 shows an exemplary embodiment of an organic optoelectronic component 1.
• a first electrode 11 is applied.
• An organic layer sequence 3 with an organic active layer 33 is applied to a main surface 6 of the first electrode 11 facing away from the carrier 2.
• a second electrode 22 On a side of the organic layer sequence 3 facing away from the carrier 2 there is a second electrode 22.
• the organic layer sequence 3 is energized via the first electrode 11 and the second electrode 22.
• an electromagnetic radiation preferably in the visible or near ultraviolet spectral range, is generated during operation of the component 1.
• the carrier 2 is designed, for example, with glass or with a glass film.
• the first electrode 11 is for
• a thickness of the carrier 2 in a direction perpendicular to the main side 20 of the carrier 2 is, for example, between inclusive 200 ⁇ m and 2 mm.
• a thickness of the first electrode 11 is, for example, between 50 nm and 200 nm inclusive, more preferably approximately 120 nm.
• a refractive index of a material of the first electrode 11 is particularly between 1.7 and 1.8 inclusive.
• Material of the carrier 2 is between about 1.45 and 1.55.
• the organic layer sequence 3 has a thickness of the order of 100 nm.
• a thickness of the second electrode 22 formed by, for example, a vapor-deposited metal or a steel foil is preferably in the range of 20 nm to 500 ⁇ m.
• the monolayer 7 On the main surface 6 of the first electrode 11, a monolayer 7 is applied in places.
• the monolayer 7 consists of self-assembling molecules.
• the monolayer 7 is applied to the main surface 6 by means of a printing process.
• a thickness of the monolayer 7, in a direction perpendicular to the main surface 6 of the first electrode 11, is in particular between 0.5 nm and 5.0 nm.
• the thickness of the monolayer 7 is therefore preferably many times smaller than the thickness of the organic layer sequence 3
• the monolayer 7 is electrically insulating and optically transparent.
• the organic layer sequence 3 has only a negligible electrical transverse conductivity in a direction parallel to the main surface 6 of the first electrode 11, the organic active layer 33 is energized only in those regions in which no monolayer 7 has been applied to the first electrode 11. These areas where the
• Mono-layer 7 is applied, so represent dark areas 4. The areas in which no monolayer 7 is applied, forming bright areas 5. In the operation of the organic Component 1, the dark areas 4 appear so much darker than the light areas 5. Approximately no electromagnetic radiation is generated in the operation of the component 1 in the dark areas 4 in the active layer 33.
• the first electrode 11, the organic layer sequence 3 and the second electrode 22 do not differ from one another with regard to their configuration in the dark regions 4 and in the light regions 5.
• the first electrode 11 substantially covers the entire main side 20 of the carrier 2, a pattern of the bright regions 5 and the dark regions 4 formed by the monolayer 7 is not recognizable outside the operation of the component 1. Since the first electrode 11 has a significantly different refractive index from the carrier 2 and thus a different reflection behavior, in the case of a first electrode 11, which would be removed, for example, in the dark areas 4, the pattern formed by the dark areas 4 and by the bright areas 5 would be outside the operation of the component 1 recognizable.
• a radiation generated in the organic layer sequence 33 leaves the component 1 through the carrier 2.
• One of the first electrode 11 facing away from the main side of the carrier 2 in this case forms a radiation passage area 17.
• the second electrode 22 with respect to the radiation generated in the organic layer sequence 3 is designed to be reflective and / or radiopaque.
• the second electrode 22 is opaque, this means that a first reflectivity of the bright regions 4 is approximately the same as a second reflectivity of the dark regions 5.
• the first and the second reflectivity are explained in more detail in FIG.
• the reflectivities can be determined by a power of a radiation R 4 radiated onto the radiation passage area 17 ,! , Rs, i and a radiation power of a radiation R 4 , 2 / Rs, 2 reflected on the radiation passage area 17 in which at least one bright area 4 and in the at least one dark area 5 are determined and compared with one another.
• the first reflectivity of the dark areas 4 is then the quotient of the
• the second reflectivity of the bright region 5 is the quotient of the radiation powers R 5 , 2 and Rs, i.
• the first and the second reflectivity in the visible spectral range ie in particular between 480 nm and 640 nm, as well as in an incident angle range between 0 ° and 70 °, do not deviate or approximately do not differ from one another.
• the transmission values then differ in the dark areas 4 and in the bright areas 5 and preferably also their
• Reflections are not or approximately not different from each other.
• the dark areas 4 and the light areas 5 are not visually distinguishable from outside the component outside of the component 1 is thus in particular due to the fact that the first electrode 11 spans both the dark areas 4 and the light areas 5 and the fact that the Mono-layer 7, the reflectivity, absorption and / or transmission of radiation at or through the component 1 through or not significantly affected.
• FIG. 1 Another embodiment of the component 1 is shown in FIG.
• an intermediate layer 12 consisting of, for example, silicon dioxide, is attached.
• a thickness of the intermediate layer 12 in a direction perpendicular to the main surface 6 of the first electrode 11 is, for example, about 20 nm.
• the main side 20 of the carrier 2 has a roughening 8.
• the roughening 8 is covered by the intermediate layer 12.
• a side facing away from the carrier 2 main side of the intermediate layer 12 is approximately smooth. In other words, the intermediate layer 12, the roughening 8 of the carrier 2 completely or partially smooth 8.
• the first electrode 11, the second electrode 22 and the organic layer sequence 3 are therefore applied the same everywhere over the main side 20 of the carrier 2 in the context of manufacturing tolerances.
• a radiation in the Operation of the component 1 generated.
• light deflection takes place from the dark areas 4 away in the direction of the light areas 5.
• an average radiation power per area leaving the component 1 at the radiation passage area 17 is 50% lower in the dark areas 4 than in the light areas 5.
• Due to the roughening 8, a reflectivity of the radiation passage area and the first electrode 11 is approximately unaffected. Outside the operation of the component 1 so the dark areas are 4 of the
• An average roughness of the roughening 8 is, for example, between 20 nm and 500 nm inclusive.
• the roughening can be achieved by laser irradiation of the main side 20 of the carrier 2 or by grinding the main side 20 with an abrasive having a defined grain size.
• the roughening 8 can be made isotropic with respect to the main extension directions of the carrier 2 or also, for example, in FIG.
• the first electrode IIa, IIb is again a layer passing over the main side 20 of the carrier 2.
• the main area 6 of the first electrode IIa, IIb has a higher work function in the dark areas 4 than in the bright areas 5.
• fewer charge carriers are injected into the organic layer sequence than in the dark areas 4
• the work function on the main surface 6 of the first electrode IIb in the light regions 5 and the first electrode IIa in the dark regions 4 can be measured, for example, in which the second electrode 22 and the active layer sequence are removed from the first electrode 11, the main surface 6 of FIG first electrode IIa, IIb is not changed approximately. Subsequently, the work function can be measured locally via photoelectron emission spectroscopy.
• an intermediate layer 12, not shown in FIGS. 1 and 4 may also be applied between the first electrode 11 and the carrier 12 in the exemplary embodiments according to FIGS. 1 and 4.
• FIG. 5 illustrates a method for producing an organic optoelectronic component, for example according to FIG. 4.
• the first electrode 11 is applied to the main side 20 of the carrier 2.
• the first electrode 11 is indium tin oxide, ITO for short.
• FIG. 5B illustrates that on a main surface 6 of the first electrode 11, a photosensitive material 9 is applied and in particular also developed.
• a thickness of the photosensitive material 9 is, for example, about 2 ⁇ m.
• the photosensitive material 9 is preferably a positive resist, English positive resist. That is, through Exposing the photosensitive material 9 is at least partially destroyed or made soluble for certain solvents, especially after development.
• the photosensitive material is, for example, AZ 1518 or OCG 825.
• Developer for the photosensitive material is, for example, MIF 350.
• Exposure is preferably carried out with unfiltered ultraviolet radiation of a Hg high-pressure lamp or a HgXe high-pressure lamp with a Radiation power of about 4 mW / cm 2 and an exposure time of about 20 s. The exposure takes place, for example, only outside a zone 13 of the first electrode 11. In FIG. 5B, the exposure is illustrated by arrows.
• the photosensitive material 9 is subsequently removed.
• the photosensitive material 9 When removing the photosensitive material 9, there is no or no significant material removal with respect to the first electrode 11. In other words, a thickness of the first electrode 11 in a direction perpendicular to the main side 20 of the carrier 2 is not affected by the removal of the photosensitive material 9.
• the removal is preferably carried out by ashing with an oxygen plasma and by rinsing with a solvent, for example a glycol ester.
• another photosensitive material 14 is applied and preferably also developed.
• the further light-sensitive material 14 may also be a positive photoresist. Outside a sub-area 15, the further photosensitive material 14 becomes also illuminated, illustrated by arrows.
• the zone 13 and / or the subregion 15 may comprise the entire main side 20 of the carrier 2, in which case the exposure of the further photosensitive material 14 may be omitted, as well as the exposure of the photosensitive material 9.
• the photosensitive materials 9, 14 were respectively developed but not exposed.
• the further photosensitive material outside of the lower region 15 is removed. Furthermore, outside the lower region 15, the first electrode 11 can be removed. In other words, a structuring of the first takes place
• Electrode 11 by a material removal of a material of the first electrode 11. In particular, at least in places, the main side 20 of the carrier 2 is exposed.
• the further photosensitive material 14 is subsequently removed without changing a thickness of the first electrode 11 in the lower region 15.
• the work function of the first electrode IIb is reduced outside the overlap region 16 as compared to the first electrode IIa.
• the component 1 is completed, see Figure 5G.
• the organic layer sequence 3 with the at least one active layer 33 and the second electrode 22 are applied.
• the application can take place only over the first electrode 11 or, unlike in FIG. 5G, also over the entire surface.

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