WO2010105492A1

WO2010105492A1 - Method for encapsulating multiple led chips with vertical structure on base to fabricate led lihgt source

Info

Publication number: WO2010105492A1
Application number: PCT/CN2010/000149
Authority: WO
Inventors: 楼满娥
Original assignee: 浙江迈勒斯照明有限公司
Priority date: 2009-03-20
Filing date: 2010-02-03
Publication date: 2010-09-23
Also published as: CN102037559A; CN102037559B

Abstract

A method for encapsulating multiple LED chips with vertical structure on a base to fabricate an LED light source is provided, which comprises: M conductive areas (2), the number of which is equal to the number of the chips, are formed on the chip bearing surface of a non-conductive base (1); the area of each of the conductive areas is larger than the area of each of the chips; N LED chips (3) are mounted on each of the conductive areas, respectively, and the N LED chips are electrically connected in series, parallel, or series-parallel. The method allows multiple chips with vertical structure to be electrically connected in one LED chip container just as the chips with planar structure, so that the flux required for conventional lighting are achieved.

Description

Method for preparing LED light source by packaging multiple vertical structure LED chips on a base

Technical field

The present invention relates to a technology for fabricating a light emitting diode (hereinafter referred to as LED) in a multi-chip integrated package, and more particularly to a method for integrally mounting an LED chip of a plurality of vertical structures on a base to prepare an LED light source. Background technique

As one of the mainstream light sources for next-generation lighting, LED has been recognized by the industry, but the illumination source requires not only high light efficiency, but also high luminous flux. It is often necessary to reach hundreds or even thousands of lumens. At present, the power of a single LED chip can withstand less than 10W, and its power conversion efficiency decreases as power increases. For example: a blue chip capable of withstanding 1. 2W of electric power, plus YAG phosphor, made of white LED, its luminous efficiency can reach 100 lumens / watt, the same process with a chip capable of withstanding 5W electric power into a white LED, it The luminous efficacy is only about 75 lumens per watt, and when it is 8W, the luminous efficacy is only 60 lumens per watt, and only 60% of the blue chip of 1. 2W of electric power is used.

However, lighting requires tens of watts, or even hundreds of watts of power, to achieve the required luminous flux. There is currently no single-chip LED chip in the world that achieves such high power. An effective way to solve this contradiction is to use multi-chip integrated packaging technology, that is, to place multiple existing LED chips on an LED base for proper electrical combination to make an LED illumination source that meets practical needs.

At present, there are two major types of LED chip structures, one is a planar structure and the other is a vertical structure. The so-called planar LED chip has positive and negative electrodes disposed on the upper surface of the chip, and the working current of the chip does not pass through the bottom surface. However, for a vertically structured LED chip, that is, one electrode is disposed on the upper surface of the chip, and the other electrode is disposed on the lower surface of the chip, and the chip operating current is drawn through the lower surface of the chip.

Regardless of the structure of the LED chip, since the LED chip is temperature sensitive, as the temperature rises, the energy efficiency of the LED chip will decrease, and other properties will change. Therefore, when manufacturing LEDs, the base for carrying the chip must be made of a material with high thermal conductivity; and because it is a practical device, the base must have a certain mechanical strength. The most widely used LED bases are made of copper or aluminum. These two materials have very good thermal conductivity. Their thermal conductivity is second only to silver in metals. But for most metals, the conductivity is good and the conductivity is not Often, this poses a very serious problem for the integrated packaging of vertical structure chips. Since the vertical structure of the LED chip is disposed on the lower surface of the chip, when the base carrying the LED chip is a copper or aluminum metal material, when a plurality of LED chips are fixed on the base, if the vertical structure of the LED The adhesive between the chip and the base is electrically conductive, and the bottom electrodes of all the chips mounted on the base are naturally electrically connected; that is, their electrical connection can only be used in parallel; however, actually the chip All paralleling is not feasible because the drive current can be large. If the adhesive is non-conductive, the bottom electrode can not be taken out, so the LED chip with vertical structure can not realize the integration of multiple LED chips into LED practical illumination source.

The planar structure chip is mounted on a base having good thermal conductivity and good electrical conductivity. The base and the chip are electrically insulated, and can be electrically connected through electrodes on the chip, that is, connected in series, in parallel or in series. It can be done, but it is not feasible for vertical chips. Summary of the invention

The object of the present invention is to overcome the defects that a plurality of vertical structure LED chips cannot be directly mounted on a metal base when manufacturing an LED illumination source; in order to make the vertical structure chip and the planar structure chip the same, in one LED chip receiving cavity In the series, the multi-chip series, parallel or series and parallel combination of electric integrated package, to achieve a LED with a practical illumination source for the usual illumination, thereby proposing a plurality of vertical structure LED chips on a base A method of preparing an LED illumination source.

The invention provides a method for preparing an LED illumination source for packaging a plurality of vertical structure LED chips on a base. For the use of conductive and non-conductive bases, the following steps are respectively taken:

1. Use a non-conductive base

1. on the LED chip carrying surface of the base, according to the number of N LED chips to be mounted, M mutually insulated conductive regions, wherein N and M are equal, and N and M 2; The area is larger than the area of the LED chip and extends out of the periphery of the LED chip to facilitate electrical connection with adjacent LED chips; the conductive power sources are electrically insulated from each other.

2. Install N vertical LED chips in each conductive area;

3. Then, the N vertical-structured LED chips are connected in series, in parallel, or in series and in parallel, and the terminals are fixed on the base through the lead and the external power lead frame, or the bayonet is fixed, and the external power leads are The frame is insulated from the base, and the current generated by the external power source flows into the LED through the lead frame.

Wherein, there are two ways to make a conductive region on a non-conductive base. - (1) The non-conductive base is made of low temperature ceramic or plastic, and the non-conductive is The conductive region is formed on the base. First, a sheet having a larger area than the LED chip (the sheet is used as a conductive region) is formed by using a material that is both electrically conductive and thermally conductive, and the sheet is embedded in the non-conductive base to expose the upper surface of the sheet. a non-conductive base (see Figure lc);

(2) M conductive regions are formed on the non-conductive base at the position where the LED chip needs to be placed and at the position of the LED chip lead-out line by using a screen printing method, a vacuum preparation thin film process or an electroplating process. The conductive region material is a silver or gold-tin alloy layer or the like (see FIG. 1a).

2. The method for packaging a plurality of vertical structure LED chips on a base provided by the present invention, when using a conductive base, there are two preparation methods, and the first method comprises the following steps:

1. and on the conductive base LED chip bearing surface, make a non-conductive layer (insulating material layer) of the same size as the base area;

2. Depending on the number of N LED chips to be mounted, M mutually insulated conductive regions are formed on the surface of the non-conductive layer of the base, wherein N and M are equal, and ^^ or ^! 2; The area of the conductive area is larger than the area of the LED chip, and extends out of the periphery of the LED chip to facilitate electrical connection with the adjacent LED chip;

3. Install N vertical structure LED chips in each conductive area;

4. The N vertical structure LED chips are then connected in series, in parallel or in series and in parallel in electrical connection. The terminal is electrically connected to the external power supply through the bow wire and the outer power cable.

In the above technical solution, the conductive base is made of metal aluminum or copper; when the conductive base is made of metal aluminum, an aluminum nitride or aluminum oxide film is formed on the base of the metal aluminum, and then nitrogen is used. On the aluminum or aluminum oxide film, a conductive layer is formed at a position where the LED chip and the lead wire are to be placed, and the conductive layer is formed by a screen printing method, a vacuum film forming process or an electroplating process to form a silver or gold tin alloy layer; 01毫米。 The thickness of the layer of 0. 05~0. 01mm.

In the above technical solution, the method further includes: fixing (eg, inlaying, bonding) a piece of insulating material having thermal conductivity on the LED chip bearing surface of the conductive base; the insulating material piece is a diamond film and a high resistance single A crystalline silicon wafer, a silicon carbide wafer, a nanocarbon sheet, a nanocarbon material, a carbon composite material, a mica sheet, a graphite sheet, or a composite thereof (see Fig. 2a).

The second method includes the following steps:

1. Using a conductive base, make M' non-conductive areas on the conductive base LED chip bearing surface according to the number of N LED chips to be mounted (see Fig. 2c); wherein, N and M' are equal, And N or M' ^2;

2. further forming a conductive region in each of the non-conductive regions, wherein the conductive region has a smaller area than the non-conductive region, but is larger than the area of the LED chip, and extends beyond the periphery of the LED chip. The conductive area is insulated from the conductive base;

3. Install N vertical structure LED chips in each conductive area;

4. Then, the N vertical structure LED chips are connected in series, in parallel or in series, and in parallel, and the terminals are electrically connected through the lead wires and the external power lead frame and the external power source.

In the above technical solution, the conductive base may be made of copper or aluminum.

In the above technical solution, the M' non-conductive regions are formed on the LED chip bearing surface of the conductive base by a damascene, bonding or soldering process, and the high resistance single crystal silicon wafer, silicon carbide wafer, nanometer 5〜0 The thickness of the sheet is 0. 05~0, the sheet thickness of the sheet is 0. 05~0 Olrran; further, on the upper surface of each of the sheets, a conductive region is formed according to the size of the LED chip and the shape of the bottom electrode lead-out area for mounting the LED chip and the bottom electrode, and the back surface of the sheet is plated for splicing. Tin-tin, silver or gold-tin alloy materials to join the original conductive base.

In the above technical solution, the conductive region may be inlaid or casted, embedded in a plastic or low-temperature ceramic, cast copper sheet, aluminum sheet; or on plastic or low-temperature ceramic, printed, A vacuum coating or spraying method is used to form a layer of a metal such as gold, silver or tin or an alloy layer thereof.

In the above technical solution, the method further comprises growing a diamond film or depositing a nano carbon film on the silicon wafer.

In the above technical solution, the series connection method is as follows: a gold wire is connected from a conductive area on the bottom surface of one LED chip to a conductive area on the top surface of an adjacent LED chip, and then N pieces are sequentially sequentially replaced by a gold wire. The vertical structure of the LED chips are electrically connected in series and then electrically connected to the external LED electrical lead wires (see FIG. 1a);

The parallel connection is as follows: all N vertical structure LED chip top electrodes are connected by one gold wire, and the other electrode is on the lower surface of the LED chip, the electrode and the conductive area are electrically connected, on the conductive area The vacant part around the LED chip becomes the lead-out area of the lower surface electrode of the LED chip; the vacant part of the conductive area of one LED chip is connected in parallel with the vacant part of the conductive area of the adjacent LED chip, and the figure Id is three. A schematic diagram of parallel connection of LED chips, after completion, is electrically connected to an external LED chip electrical lead-out line;

The series and parallel combined way: first of all the number of the LED chips into two equal groups, each group of LED chips are connected in series, and then connected to each of the positive electrode of the LED chip is connected to the negative electrode (see FIG. Lb) ₀ The advantages of the invention are:

The invention provides a method for preparing an LED illumination source having the luminous flux required for normal illumination, and solves the problem that the vertical structure LED chip cannot be mounted on the bearing surface of the same base, and is combined into a high-power LED; the preparation of the invention A method for preparing an LED illumination source by encapsulating a plurality of LED chips of a vertical structure on a base, so that the LED chip of the vertical structure and the LED chip of the planar structure can be connected in series in one LED chip receiving cavity. The electric combination of parallel or series and parallel combination is integrated and packaged, so as to achieve the purpose of one LED having the luminous flux required for normal illumination. The preparation method is simple and easy to scale production.

By adopting the method of packaging a plurality of vertical structure LED chips on a base provided by the invention, the prepared LED illumination source has practicality and long service life, and the power can reach 50W, 100W or even larger.

DRAWINGS

1 is a structural cross-sectional view of an LED illumination source made by mounting a plurality of conductive regions on a surface of a non-conductive base, and mounting a vertical structure of LED chips in each conductive region. FIG. 1b is a structure shown in FIG. Top view

Figure lc is a cross-sectional view showing a structure in which a plurality of conductive materials are embedded in the upper surface of the non-conductive base of the present invention

FIG. 1d is a schematic diagram of an electrical connection embodiment in which three chips are connected in parallel according to the present invention.

2a is a cross-sectional view showing the structure of an LED chip in which a vertical structure is formed by depositing an insulating non-conductive layer on the surface of the conductive substrate, and then forming N conductive regions on the non-conductive layer.

Figure 2b is a cross-sectional view showing the structure of an LED chip with a vertical structure in each conductive region by splicing an insulating sheet on the upper surface of the conductive base and then making N conductive regions on the insulating sheet.

Figure 2c is a cross-sectional view showing the fabrication of a plurality of insulating non-conductive regions on the upper surface of the conductive base, and then N conductive regions on the insulating layer, and mounting two vertical LED chips in each conductive region.

Figure 2d is a top view of the structure shown in Figure 2c

Figure 3 is a structure of an LED illumination source in which a metal piece is embedded in a non-conductive base of plastic, a vertical structure of an LED chip is mounted in each metal piece (conductive area), and electrical connection is made.

4 is a cross-sectional view showing the structure of a 20W LED illumination source produced by the method of the present invention.

Figure 5 is a plan view showing the structure of a 50W LED illumination source produced by the method of the present invention. The picture is as follows:

1. Non-conductive base 2. Conductive area 3. LED chip

4. Chip top surface electrode 5. Chip bottom electrode lead-out area 6. External power lead

7. Gold wire 8. Embedded conductive area 9. Conductive base

10. Non-conductive layer 11. Non-conductive area 12. Solder

13. Frame 14. High-resistance monocrystalline silicon wafer

In order to make the objects, technical solutions and advantages of the present invention more apparent, the packaging method of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

Example 1

Referring to FIG. la, using the packaging method of the present invention, an LED having a rated current of 700 raA and a power of 7 W is prepared, and the specific steps are as follows:

Selecting a low temperature ceramic as the non-conductive base 1 of the LED chip, and making 6 conductive regions according to the number of 6 vertical structure LED chips 3 to be mounted on the LED chip bearing surface of the ceramic non-conductive base 1 2, the conductive region 2 is made of a gold or silver film by printing or evaporation process; the area of the conductive region 2 is larger than the area of the LED chip 3, and extends out of the periphery of the LED chip 3, so as to be adjacent to 5毫米。 The area of each of the conductive areas is 1. 5 mmX l. 5 mm.

The LED chip 3 of the vertical structure of 1. 0W-1. 2W is packaged in the six conductive regions 2 of the drawing, and the three LED chips 3 are used as a group, and the gold wire 7 is used. A set of three LED chips are connected in series (refer to FIG. 1a), and then the two groups connected in series are electrically connected. The terminal is connected to the driving power source through the external power supply lead 6, and the LED chip 3 is covered with Transparent optical material, transparent optical material can be silica gel, epoxy resin or lens; if white LED is to be made, blue light chip should be used, and the optical material covered on the blue chip should contain light conversion material such as phosphor (refer to the figure). Lb), these can be achieved by the skilled person, prepared into a rated current of 700mA, power of 7W LED.

It is obvious that the electrical connection is not in a proper manner. It is preferable to make a proper series connection and then parallel connection. Since the 12V is a universal power supply voltage, the voltage of the three LED chips 3 in series is 9. 0V - 10. 5V The voltage is exactly matched with the voltage of 12V. Therefore, the present embodiment uses three chips in series, and then serially connects the two electrical connections, which can be implemented by those skilled in the art.

Referring to Figure 3, a non-conductive base 1 is made of plastic or low-temperature ceramic material to prepare a 7W LED light source. 5毫米~0 0. The thickness of the thickness of the substrate is 0. 5mm~0. The thickness of the thickness of the substrate is 0. 5mm~0 Lmm silver plated brass sheet, the frame is made around the silver plated brass piece, and the metal foil is shown in Fig. 3. It is a metal for mounting three strings of two LED chips 3 for electrical connection. The sheet is then pressed into the non-conductive base 1 of the present embodiment to form an embedded conductive region 8. After the metal frame 13 is cut after the finalization is completed, the LED chip 3 can be placed in a large area, and the electrical connection is made, and the three chips are connected in series, and then the two groups are connected in parallel, and then taken out, as shown in the figure. 1 (b). Low-temperature ceramics and plastics have poor thermal conductivity, so the base should be thin. Under the condition of satisfying the mechanical strength, it is as thin as possible, generally about 0.5~2mm, which is beneficial to the heat transfer to the radiator below. If the inorganic material is doped into the thermoplastic material, its thermal conductivity can be greatly improved, and it is suitable for mass production. Example 2

Referring to Figure 4, a 20W white LED illumination source is fabricated using a vertical structure LED chip. In this embodiment, a general-purpose 20W white LED is produced by using a blue chip and a YAG garnet phosphor. Since the power of the entire LED is already quite large, the 20 or so LED chips 3 and 20 used in the operation of the LEDs have a large amount of heat generated during the simultaneous operation. Therefore, the non-conductive substrate in the embodiment 1 is not ideal for heat treatment. Another option in the present invention is required.

In the embodiment, the conductive base 9 is made of an aluminum plate with a thickness of about 3 mm, and the aluminum plate is made into a basin shape. The central portion of the aluminum plate is made into a pelvic bottom, and the bottom of the pelvis is a circle having a diameter of about 10-20 mm, and the aluminum plate can also be used. The utility model is formed into a rectangle of considerable area, and two steps are arranged from the bottom of the bottom of the basin wall, the top of the basin edge is a platform, and the outer power lead 6 is arranged on the platform, as shown in FIG. 4; wherein, from the bottom of the basin The angle between the slope of the first step and the plane of the basin bottom is between 100° and 160°, and the angle of the second step is not strictly required, so that the electrode is taken out as a principle.

After the aluminum conductive base 9 is completed, a non-conductive layer 10 is formed on the bottom of the conductive base 9 to form a thin film of insulating material. The general material film is formed into an aluminum nitride film or an aluminum oxide film by a conventional coating method. Aluminum nitride has good thermal conductivity and insulation properties, but it is expensive, so alumina is usually used.

Then, on the prepared aluminum nitride film or aluminum oxide film, according to the number of LED chips to be placed, a conductive screen 2 is printed by using a conventional screen printing technique, that is, 20 conductive regions 2 (as shown in FIG. 4). Show). In this embodiment, 20 LED chips 3 are respectively divided into 4 groups, each group of 5 LED chips 3 are connected in series, and 4 groups in series are connected in parallel to each conductive region 2 made of silver paste. Put a 1W LED chip 3 and sinter the LED chip 3, then use the gold wire 7 to make the above electrical connection. First connect the 5 chips in series, then connect the LED chips 3 in the four groups. Together, the negative poles are connected together. After completion, it is made by coating the white LED with the YAG phosphor powder on the chip, and then coating the transparent protective film. If the monochromatic light is added, the optical material such as transparent silica gel can be used to make the LED. Illumination source, which can be implemented by those skilled in the art.

In order to simplify the production process, an aluminum plate can also be used as the conductive base 9, that is, without making a basin type, an aluminum oxide insulating layer is directly formed on the aluminum plate, and an LED chip mounting region is made on the insulating layer of the aluminum oxide (20 conductive layers). Zone 2), other electrical connection zones and connections are as described above. However, such a structure must be protected by an optically transparent material for the LED chip carrying surface of the entire base 9, including the gold wire bonding area, which can be implemented by those skilled in the art to prevent contact or collision. Cause damage. Example 3.

Referring to FIG. 5, 48 pieces of 1W vertical structure LED chip 3 are used, and the electrical connection mode is 8 chips 3 connected in series, and six groups are connected in parallel to produce a 50W green LED illumination source, and the material and characteristics of the green LED chip. It has the same characteristics as the blue LED chip, and both can be used universally.

The conductive base 9 in this embodiment is a common metal copper base, and a high-resistance single crystal silicon wafer 14 having a thickness of 0.05 to 0.01 mm is used as a non-conductive region 11 on the metal copper base, which can be considered as Not electrically conductive. The high-resistance single crystal silicon wafer 14 is plated with gold-tin alloy or other solderable material on both sides, and then patterned into one surface on one side by photolithography, thereby forming 48 mutually insulated conductive regions 2 and chips. The bottom electrode lead-out area 5 (shown in Figure 5). Since the other side of the high-resistance single crystal silicon wafer 14 has been plated with a gold-tin alloy or other solderable material, it can be attached to the copper base and equipped with a corresponding commercially available lead frame, thus making a suitable application. In the base of the vertical structure LED chip, the subsequent manufacturing process and the general LED manufacturing method are the same.

For the characteristics of the vertical structure chip and the LED base having electrical and non-conducting points, the method of the present invention can be divided into three categories, as follows:

1. For a non-conducting base, N pieces of metal foil are produced, each of which is larger than the area of the LED chip, and then the metal foil is pressed into a plastic or low-temperature ceramic to form N conductive regions that are insulated from each other. Then, the N vertical structure LED chips are respectively placed on the N metal foils, the metal foil becomes the bottom electrode of the chip, and the top surface of the chip is the other electrode, so that the two electrodes of each chip are insulated from the other chip electrodes. The bottom electrode of the previous chip and the top electrode of the latter chip are connected together by a gold wire to form a series connection between the two chips. For the N vertical structures described The LED chips are electrically connected in series or in parallel; as shown in Fig. 1(b), this is a metal foil for three strings. Low-temperature ceramics and plastics have poor thermal conductivity, so the base should be thin. Under the condition of satisfying the mechanical strength, it is as thin as possible, which is beneficial to the heat transfer to the radiator below.

It is also possible to produce N mutually insulated conductive regions by printing or sputtering on a non-conductive base for mounting the chip and electrical connections.

The film is commonly referred to as a film, for example, in aluminum. The film is coated with a thin film of a conductive layer. The insulating layer is not electrically conductive, but has a certain degree of thermal conductivity, and the thickness of the insulating layer is about 0. 05~0. A thin film of aluminum nitride or aluminum oxide is formed on the base, and a conductive layer is formed on the aluminum nitride or aluminum oxide film at a position where the LED chip and the lead wire are to be placed, for example, silver paste or silver or gold plating is applied by silk screen printing. The conductive layer is formed by a process such as tin alloy, and the bottom electrodes of such a plurality of LED chips are separately drawn separately, and the electrical connection of the series, parallel connection and series-parallel connection can be performed between the chips. Due to the aluminum nitride, aluminum oxide has a certain thermal conductivity and is very thin, so it has little effect on the heat dissipation of the chip.

3. On the LED base which is both conductive and thermally conductive, a layer of insulating but certain thermal conductivity is covered on the chip bearing surface by bonding or splicing, such as high resistance monocrystalline silicon wafer, silicon carbide wafer, Nano carbon sheet or nano carbon material, carbon composite material, mica sheet, graphite sheet, etc. and other composite materials, the upper surface of the sheet, according to the needs of the integrated package, the LED chip mounting area and the bottom electrode lead-out area are formed on the back side of the sheet. Plated with splicable materials, such as tin-tin, silver, gold-tin alloy, etc., to be bonded to the original conductive base, or a bonding process, using a bonding or bonding process to wafer or Nano-carbon sheets and the like are bonded to a highly thermally conductive and electrically conductive base.

Considering that the thermal conductivity of materials such as silicon wafers is not as good as that of metals such as copper and aluminum, the present invention can grow a thin film material having a very high thermal conductivity on a silicon wafer, for example, a diamond film or a precipitated nanocarbon film on a silicon substrate, diamond The thermal conductivity is almost five times that of copper. Therefore, the heat generated by the chip can be quickly transferred to the peripheral area of the chip, and then transferred to the heat dissipation base through the silicon wafer to achieve the purpose of rapid heat dissipation. The thermal conductivity of the material such as nano carbon is copper. Double, but slightly reduced when made of non-conductive film, but it will greatly improve the thermal conductivity of silicon wafer.

The above three methods achieve mutual insulation and electrode extraction between the bottoms of the LED chips, and the electrical connections can be connected in series and in parallel. The subsequent LED fabrication steps are the same as the conventional power LED manufacturing steps. It will be appreciated and appreciated that various modifications and improvements can be made to the present invention described above without departing from the spirit and scope of the invention. Therefore, the scope of the claimed technical solutions is not limited by any particular exemplary teachings presented.

Claims

A method of fabricating an LED light source by packaging a plurality of vertical structure LED chips on a substrate, comprising the steps of:

1) using a non-conductive base, and on the LED chip carrying surface of the base, making M mutually insulated conductive regions according to the number of N LED chips to be mounted, wherein N and M are equal, and 1^ and The conductive area has a larger area than the LED chip and extends out of the periphery of the LED chip to facilitate electrical connection with adjacent LED chips;

2) mounting N vertical-structured LED chips in each of the conductive regions;

3) Then, the N vertical-right-weighted LED chips are connected in series, in parallel, or in series and in parallel. Profit

2 . The method of claim 1 , wherein the non-conductive base is made of low temperature ceramic or plastic, and the non-conductive base is made of low temperature ceramic or plastic. The conductive region is formed on the conductive base by using a material that is both electrically conductive and thermally conductive to form a larger area than the LED chip, and the sheet is embedded in the non-conductive base to expose the surface of the sheet to the non-conductive base; or

The position of the LED chip needs to be placed on the bearing surface of the base LED chip, and M conductive regions are formed by a screen printing method, a vacuum preparation thin film process or an electroplating process, and the M conductive regions are insulated from each other, and the conductive The zone is a layer of silver or gold tin alloy.

3. A method of fabricating an LED light source by encapsulating a plurality of vertical structure LED chips on a base, comprising the following steps:

1) using a conductive base, on the LED chip carrying surface of the base, making a non-conductive area of the same size as the base area;

2) according to the number N of LED chips to be mounted, and then making M mutually insulated conductive regions on the non-conducting region, wherein N and M are equal, and the sum is 3⁄41 2; the area of the conductive region is larger than the area of the LED chip Large, and extending out of the periphery of the LED chip to facilitate electrical connection with adjacent LED chips;

3) mounting N vertical LED chips in each of the conductive regions;

4) Then, the N vertical-structured LED chips are connected in series, in parallel, or in series and in parallel.

The method for preparing an LED light source by packaging a plurality of vertical structure LED chips on a substrate according to claim 3, wherein the conductive base is metal aluminum or copper; wherein, the preparation of the conductive region Method: deposit or grow a layer directly on the conductive chip LED chip bearing surface 1 。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。.

5 . The method of claim 4 , wherein the conductive base is made of metal aluminum, and the metal aluminum is mounted on the base of the metal aluminum. Making an aluminum nitride or aluminum oxide film, and then forming a conductive layer on the aluminum nitride or aluminum oxide film at a position where the LED chip and the lead wire need to be placed; wherein the conductive layer is screen printed, A silver or gold-tin alloy layer is formed by vacuum forming a thin film process or an electroplating process.

6 . The method of claim 4 , wherein the insulating material sheet is a high resistance monocrystalline silicon wafer, a silicon carbide wafer, and a nano carbon. Sheets, nanocarbon materials, carbon composites, mica flakes, graphite flakes or composites thereof.

7 . The method of claim 6 , wherein the composite material is a carbon nano material sheet, wherein the insulating material sheet is formed by a method of packaging a plurality of vertical structure LED chips on a substrate. 01毫米。 Thickness is 0. 05~0. 01mm.

8. A method of fabricating an LED light source by packaging a plurality of vertical structure LED chips on a substrate, comprising the following steps -

1) using a conductive base, according to the number N of LED chips to be mounted, M' non-conductive regions are formed on the LED chip bearing surface of the conductive base; wherein N and M' are equal, and N or M' ^ 2;

2) forming a conductive region in each of the non-conductive regions, wherein the conductive region has a smaller area than the non-conductive region, and the conductive region has a larger area than the LED chip, and extends out of the LED The periphery of the chip, so as to electrically connect the non-conductive area between the chips and the conductive base;

3) mounting N vertical LED chips in each of the conductive regions;

9 . The method of claim 8 , wherein a plurality of vertical structure LED chips are mounted on a substrate to prepare an LED light source, wherein the M′ non-conductive regions are formed on the LED chip bearing surface of the conductive base. Fixing a high-resistance single crystal silicon wafer, a silicon carbide foil, a nanocarbon foil, a nanocarbon material sheet, a carbon composite sheet, a mica sheet, a graphite sheet, or a composite sheet thereof on a base by a bonding or soldering process The LED chip carrying surface, wherein the thickness of the sheet is 0. 05~0. 01mm; and further, an LED chip mounting area and a bottom electrode lead-out area are formed on the upper surface of the sheet, and the back surface of the sheet is plated. Solder, silver or gold-tin alloy material for splicing, In order to be connected with the original conductive base.

10 . The method of claim 8 , wherein a plurality of vertical structure LED chips are mounted on a substrate to prepare an LED light source, wherein the single crystal silicon wafer or the silicon carbide wafer is further grown with a diamond film or Precipitating a nanocarbon film.

11. A method of fabricating an LED light source by packaging a plurality of vertical structure LED chips on a substrate according to claim 1, 3 or 8, wherein

The series connection method is: connecting a conductive wire of a top surface of an LED chip to a conductive area of a top surface of an adjacent LED chip by using a gold wire, and sequentially connecting N vertical LED chips in series with a gold wire. Connecting, the terminal is electrically connected to the electrical lead wire of the external LED;

The parallel connection is as follows: all N vertical structure LED chip top electrodes are connected by a gold wire, the lower surface electrode of the chip and the conductive area are connected, and the N conductive areas are connected by gold wire, the terminal and the LED External electrical lead wire electrical connection;

The series and parallel combination manners are as follows: dividing the N LED chips into equal groups, the LED chips in each group are connected in series, and then the positive electrodes of each group are connected together, and the negative electrodes are connected together, the terminal It is electrically connected to the lead wire outside the LED.