WO2010103975A1 - Pile solaire à couches minces composites et procédé pour sa fabrication - Google Patents

Pile solaire à couches minces composites et procédé pour sa fabrication Download PDF

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Publication number
WO2010103975A1
WO2010103975A1 PCT/JP2010/053438 JP2010053438W WO2010103975A1 WO 2010103975 A1 WO2010103975 A1 WO 2010103975A1 JP 2010053438 W JP2010053438 W JP 2010053438W WO 2010103975 A1 WO2010103975 A1 WO 2010103975A1
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Prior art keywords
solar cell
electrode layer
back electrode
metal back
layer
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PCT/JP2010/053438
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English (en)
Japanese (ja)
Inventor
勝巳 櫛屋
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昭和シェル石油株式会社
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Publication of WO2010103975A1 publication Critical patent/WO2010103975A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a compound-based thin film solar cell obtained by laminating a metal back electrode layer on a glass substrate and a method for producing the same.
  • an integrated thin-film solar cell including two or more unit cells connected in series on an insulating substrate, the first electrode film sequentially stacked on the insulating substrate, a semiconductor film including a pn junction; and a second electrode film, wherein the first electrode film, the semiconductor film, and the second electrode film are first, second, and third substantially parallel to each other, respectively.
  • Two or more unit cells divided by the dividing groove, and the two adjacent unit cells are arranged such that the second electrode film of one unit cell is connected to the other unit via the second dividing groove.
  • the semiconductor film is connected in series by being connected to the first electrode film of the cell, and the semiconductor film includes a group Ib element, a group IIIb element, and a group VIb element and is adjacent to the first electrode film
  • a first electrode having a semiconductor film Includes molybdenum, is 0.3 ⁇ m or less the thickness of the flat portion integrated thin-film solar cell of the first electrode film has been proposed.
  • an object of the present invention is to provide a compound thin film solar cell in which metal back electrode layers effective for improving the FF characteristics of a solar cell and reducing the yield are laminated, and a method for producing the same.
  • a compound thin film solar cell is a compound thin film solar cell in which a metal back electrode layer made of molybdenum is laminated on a glass substrate, and the metal back electrode The layer is formed on the glass substrate by sputtering so that the reflectance of the surface thereof is in the range of 10% to 35%.
  • the film thickness of molybdenum formed on the glass substrate may be 800 nm or less.
  • the glass substrate is disposed as a sample in a predetermined vacuum chamber, and the molybdenum is disposed as a sputter target.
  • the vacuum chamber is evacuated, and an inert gas is injected into the evacuated chamber at a gas flow rate of 60 to 70 sccm to maintain a film forming pressure of 20 mTorr or less.
  • the present invention it is possible to obtain a solar cell having both low adhesion as a solar cell, adhesion with the light absorption layer, ease of patterning by laser.
  • FIG. 1 the laminated structure of the compound type thin film solar cell which concerns on this embodiment is shown.
  • the compound thin film solar cell 1 is formed by sequentially laminating a metal back electrode layer 12, a light absorption layer 13, a high resistance buffer layer 14, and a window layer 15 on a glass substrate 11.
  • the glass substrate 11 is made of, for example, blue plate glass.
  • the glass substrate 11 is made of, for example, silica having a thickness of about 50 nm in order to prevent alkali metal components such as sodium (Na) and potassium (K) contained in the soda glass from diffusing into the light absorption layer.
  • SiO 2 an alkali-barrier layer may be composed of a coated soda lime glass made of, or the like.
  • the metal back electrode layer 12 is a thin film made of molybdenum (Mo), and is formed on the glass substrate 11 by a DC sputtering method.
  • Mo molybdenum
  • the molybdenum (Mo) film is used as the metal back electrode layer 12 because it has high corrosion resistance with respect to selenium (Se) used in the process of forming the light absorption layer 13, and is a sputtering technique that is a general-purpose technique. Can be easily formed into a large area, and the molybdenum selenide (MoSe 2 ) layer formed on the molybdenum (Mo) film by reaction with selenium (Se) absorbs light by a mechanical scriber using a metal needle.
  • the metal back electrode layer 12 according to the present embodiment is formed into a three-layer structure by DC sputtering using three molybdenum (Mo) targets.
  • Mo molybdenum
  • the reason why the three-layer structure is used in this way is that in the case of an in-line type sputtering apparatus, cracks are likely to occur in a long glass substrate due to heat input to the molybdenum (Mo) film and the compressive stress generated. is there. Details of the metal back electrode layer 12 according to this embodiment will be described later.
  • the light absorption layer 13 is, for example, a thin film having a thickness of 1 to 3 ⁇ m having a p-type conductivity I-III-VI 2 group chalcopyrite structure, CuInSe 2 , Cu (InGa) Se 2 , Cu (InGa) ( SSe) composed of a multi-component compound semiconductor thin film such as 2 .
  • Other examples of the p-type CIS light absorption layer include a selenium compound-based CIS light absorption layer, a sulfide-based CIS light absorption layer, and a selenide / sulfide-based CIS light absorption layer.
  • the CIS light absorption layer is made of CuInSe 2 , Cu (InGa) Se 2 or CuGaSe 2
  • the sulfide-based CIS light absorption layer is made of CuInS 2 , Cu (InGa) S 2 , CuGaS 2 , and the selenium.
  • CuIn (SSe) 2, Cu (InGa) (SSe) 2 consists CuGa (SSe) 2, also, as having a surface layer, CuIn (SSe) 2 with a Cu (InGa) Se 2, CuIn (SSe) 2 having a CuInSe 2, CuIn (SSe) 2 as a surface layer having a surface layer as a surface layer u (InGa) (SSe) 2 , with a CuIn (SSe) 2 as a surface layer CuGaSe 2, Cu (InGa) ( SSe) Cu with 2 as a surface layer (InGa) Se 2, Cu ( InGa) (SSe) 2 There are CuGaSe 2 having Cu as a surface layer, CuGaIn 2 having Cu (InGa) Se 2 as a surface layer and CuGaSe 2 having CuGa (SSe) 2 as a surface layer.
  • the light absorption layer 13 is formed on the metal back electrode layer 12 by a
  • the high resistance buffer layer 14 is a layer for forming an electrical junction with the light absorption layer.
  • the buffer layer can be formed of a thin film of a zinc mixed crystal compound such as zinc sulfide (ZnS) by a metal organic chemical vapor deposition (MOCVD) method, a vacuum deposition method, or the like.
  • MOCVD metal organic chemical vapor deposition
  • the window layer 15 is composed of an n-type transparent conductive film.
  • the window layer 15 is formed on the high resistance buffer layer 14 by MOCVD.
  • the metal back electrode layer 12, the light absorption layer 13, the high resistance buffer layer 14, and the window layer 15 laminated on the glass substrate 11 are subjected to patterning P1, P2, and P3 in the manufacturing process.
  • Patterning P1 is patterning performed after a high-melting-point, high-corrosion-resistant metal molybdenum (Mo) is formed as a metal back electrode layer 12 by DC sputtering, and has high linearity, reproducibility, and high speed. Pattern formation is required.
  • Mo metal molybdenum
  • an excimer laser particularly a Kr-F excimer laser is used in the present embodiment, regardless of a mechanical scriber using a metal needle.
  • the Kr-F excimer laser sublimates the metal with ultraviolet light and cuts the pattern. Form. As a result, damage to the glass substrate can be prevented.
  • the metal back electrode layer 12 is patterned using an excimer laser.
  • the present invention is not limited to this, and an Nd-YAG laser of the second harmonic or higher is used instead of the excimer laser.
  • it may be an Nd-YAG laser having a wavelength of 532 nm or less, and more preferably a fourth harmonic Nd-YAG laser (wavelength: 266 nm).
  • Patterning P2 is patterning performed after the high-resistance buffer layer 14 is formed. In the formation of the pattern groove in the patterning P2, it is necessary to avoid the laser method and the mechanical scribing method using a metal needle because the light absorption layer 13 needs to absorb light and to prevent the film from being affected by heat. Is done.
  • Patterning P3 is patterning performed after the window layer 15 is formed.
  • the laser method is difficult to apply because the transparent conductive film configured as the window layer 15 is hard and transparent. Therefore, a mechanical scribing method using a metal needle is applied.
  • the metal back electrode layer 12 is required to have adhesiveness with the light absorption layer 13, ease of patterning P1 by laser, and low resistivity.
  • the adhesion to the light absorption layer 13 indicates that the light absorption layer 13 is required not to peel from the metal back electrode layer 12.
  • the ease of patterning P1 by laser indicates that it is required to form one continuous linear pattern groove without disconnection when forming patterning P1.
  • the low resistivity indicates that a resistance component that causes a decrease in power generation efficiency of the compound thin film solar cell 1 is required to be as small as possible.
  • the point that the metal back electrode layer 12 is related to the low resistivity is that molybdenum (at the time of vapor phase selenization in the process of peeling the metal back electrode layer 12 and the light absorption layer 13 and forming the light absorption layer 13).
  • Molybdenum selenide (MoSe 2 ) layer formed by the reaction of Mo) and selenium (Se) causes an increase in series resistance component.
  • the inventor of the present application described the metal back electrode layer as factors determining the adhesion to the light absorption layer 13 required for the metal back electrode layer 12, the ease of patterning P1 by laser, and the low resistivity as described above. Focusing on the surface shape of 12 and its film thickness, the correlation was verified.
  • the metal back electrode layer 12 is produced by a DC sputtering method, and the inventors of the present application have found that the surface shape of the metal back electrode layer 12 changes depending on the film forming pressure of sputtering. That is, when the film forming pressure is low, the film density or the density of molybdenum (Mo) particles becomes high, so that the surface smoothness increases. On the other hand, when the film forming pressure is high, the film density on the surface of the film or the density of molybdenum (Mo) particles becomes small, so that the shape has many gaps.
  • the metal back electrode layer 12 is produced by changing only the film forming pressure. An experiment for measuring the reflectance on the surface of the layer 12 was performed.
  • FIG. 2 shows a patterning apparatus used for patterning P1.
  • the patterning apparatus shown in FIG. 2 was used.
  • the irradiation conditions of the patterning apparatus are as shown in Table 1, and the total reflection of the metal back electrode layer 12 at a position of a wavelength of 250 nm, which substantially coincides with the wavelength of 248 nm, is measured with a Kr-F excimer laser having a wavelength of 248 nm. did.
  • Table 2 shows the film forming conditions of the metal back electrode layer 12 whose reflectance was measured in this experiment.
  • the metal back electrode layer 12 in the present embodiment is formed in a three-layer structure, and is formed in order of 0.66 kW, 2.88 kW, 2.88 kW on the glass substrate 11. Is formed into a film.
  • the thickness of each of the three layers of the metal back electrode layer 12 is about 90 nm, 360 nm, and 360 nm in order from the glass substrate 11 side, and the total thickness is 800 to 820 nm.
  • FIG. 3 shows the measurement results of the reflectance of the metal back electrode layer 12 produced by changing only the film forming pressure under the above film forming conditions.
  • the lower the film forming pressure the higher the reflectance. This indicates that when the film forming pressure is low, the film density or the density of molybdenum (Mo) particles is increased, and the smoothness of the surface is increased. In this regard, if the reflectance is too high, it is assumed that the energy density on the irradiated surface is reduced and patterning becomes difficult. Further, since the surface is smooth, the adhesion between the light absorption layer 13 and the metal back electrode layer 12 is lowered, and the light absorption layer 13 may be peeled off from the metal back electrode layer 12. Further, when the adhesion between the metal back electrode layer 12 and the light absorption layer 13 is poor, peeling occurs, a gap is formed between the joint surfaces of both layers, and the series resistance component increases.
  • the reflectivity decreases as the film forming pressure increases.
  • the film density or the density of molybdenum (Mo) particles is reduced, and the surface has a shape with many gaps.
  • the shape having many gaps is effective for adhesion to the light absorption layer 13.
  • the reflectance is too low, the reactivity with selenium (Se) increases during vapor phase selenization in the film forming process of the light absorption layer 13, and molybdenum selenide (MoSe 2 ) The layer is formed excessively.
  • the molybdenum selenide (MoSe 2 ) layer causes an increase in the series resistance component and deteriorates the solar cell characteristics.
  • FIG. 4 showing the correlation between the resistivity of the metal back electrode layer 12 and the reflectance, when the reflectance is less than 10%, the resistivity is very high and the solar cell characteristics are poor.
  • the metal back electrode layer 12 having a reflectance in the range of 10% to 35% the resistivity is low, and the adhesion between the metal back electrode layer 12 and the light absorption layer 13 is low. It was revealed that a compound-based thin film solar cell 1 that is high and easy to pattern P1 can be obtained. From the above experimental results, it is clear that the metal back electrode layer 12 having a reflectance in the range of 10% to 35% can be formed at a film forming pressure of 20 mTorr or less.
  • the film thickness is determined by the combination of the power applied to the sputtering target and the transport speed of the substrate. In this experiment, the experiment was performed by changing the transport speed.
  • Table 3 shows the film forming conditions of the metal back electrode layer 12 in the film thickness evaluation experiment.
  • the metal back electrode layer 12 is formed with a three-layer structure, and is formed at 0.66 kW, 2.88 kW, and 2.88 kW in the order of film formation on the glass substrate 11.
  • Table 4 shows the contents of the metal back electrode layer 12 obtained under each film forming condition.
  • the sheet resistance decreased as the film thickness increased. If the film thickness is in the range of 340 to 820 nm, the reflectance of the metal back electrode layer 12 belongs to the above-described reflectance of 10% or more and 35% or less, and the compound-based thin film solar that can obtain effective solar cell characteristics. It is clear that the battery 1 can be produced.
  • Table 5 shows the characteristics of the compound thin film solar cell 1 produced using the metal back electrode layer 12 formed under each film forming condition.
  • the patterning P1 tends to cause protrusions such as debris and burrs in the vicinity of the pattern groove, or a bridge that causes a short circuit inside the pattern groove. This problem can be solved by reducing the film thickness. Moreover, when making a film thickness thin, a conveyance speed will be raised and manufacturing efficiency will become high in a manufacturing process.
  • the metal back electrode layer 12 having a film thickness of 800 nm or less and a reflectance of 35% or less can be cut.
  • the metal back electrode layer 12 having a film thickness of 800 nm or less and a reflectance of 35% or less is manufactured, first, the glass substrate 11 is placed as a sample in a predetermined vacuum chamber, and molybdenum (Mo) is sputtered. After being arranged as a target, the inside of the vacuum chamber is evacuated. Then, an argon (Ar) gas is injected into the vacuum chamber at a gas flow rate of 60 to 70 sccm to keep the inside of the vacuum chamber in an atmosphere with a film forming pressure of 20 mTorr or less, and a pair of sputter electrodes disposed in the vacuum chamber.
  • Mo molybdenum
  • the metal back electrode layer 12 having a reflectance by laser of 35% or less is produced.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

La présente invention concerne une pile solaire obtenue par ajout d'une couche d'électrode sur un côté inférieur. Selon l'invention, cette couche d'électrode parvient à régler les questions efficacement liées à une amélioration du facteur de remplissage et à une diminution de la perte de rendement dans des piles solaires. La présente invention concerne également un procédé de fabrication d'une pile solaire de ce genre. Une pile solaire à couches minces composites, qui comprend, sur un côté inférieur, une couche d'électrode métallique contenant du molybdène stratifié sur un substrat de verre, est caractérisée en ce que la couche d'électrode métallique disposée sur un côté inférieur est réalisée par pulvérisation cathodique sur le substrat de verre susmentionné en tant qu'une couche mince dont une réflectivité se situe dans la plage de 10 % à 35 %.
PCT/JP2010/053438 2009-03-12 2010-03-03 Pile solaire à couches minces composites et procédé pour sa fabrication WO2010103975A1 (fr)

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JP2009059809A JP4782855B2 (ja) 2009-03-12 2009-03-12 化合物系薄膜太陽電池、及びその製造方法
JP2009-059809 2009-03-12

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KR101173401B1 (ko) * 2011-01-24 2012-08-10 엘지이노텍 주식회사 태양전지 및 그의 제조방법
JP5665712B2 (ja) * 2011-09-28 2015-02-04 京セラ株式会社 光電変換装置
JP6265362B2 (ja) * 2012-02-27 2018-01-24 日東電工株式会社 Ｃｉｇｓ系化合物太陽電池

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140307A (ja) * 2002-10-16 2004-05-13 Honda Motor Co Ltd 薄膜太陽電池の製造方法
JP2007317885A (ja) * 2006-05-25 2007-12-06 Honda Motor Co Ltd 太陽電池およびその製造方法
JP2008243983A (ja) * 2007-03-26 2008-10-09 Tokio Nakada 薄膜太陽電池の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140307A (ja) * 2002-10-16 2004-05-13 Honda Motor Co Ltd 薄膜太陽電池の製造方法
JP2007317885A (ja) * 2006-05-25 2007-12-06 Honda Motor Co Ltd 太陽電池およびその製造方法
JP2008243983A (ja) * 2007-03-26 2008-10-09 Tokio Nakada 薄膜太陽電池の製造方法

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