WO2010098618A2 - Polymère pour revêtir un motif de photorésine, et procédé pour former un motif pour un dispositif à semi-conducteurs faisant intervenir ledit polymère - Google Patents

Polymère pour revêtir un motif de photorésine, et procédé pour former un motif pour un dispositif à semi-conducteurs faisant intervenir ledit polymère Download PDF

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WO2010098618A2
WO2010098618A2 PCT/KR2010/001227 KR2010001227W WO2010098618A2 WO 2010098618 A2 WO2010098618 A2 WO 2010098618A2 KR 2010001227 W KR2010001227 W KR 2010001227W WO 2010098618 A2 WO2010098618 A2 WO 2010098618A2
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photoresist pattern
polymer
group
formula
mol
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PCT/KR2010/001227
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English (en)
Korean (ko)
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WO2010098618A3 (fr
Inventor
이정열
이재우
김덕배
김재현
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주식회사 동진쎄미켐
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Publication of WO2010098618A2 publication Critical patent/WO2010098618A2/fr
Publication of WO2010098618A3 publication Critical patent/WO2010098618A3/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Definitions

  • the present invention relates to a photoresist pattern coating polymer, and more particularly, to a photoresist pattern coating polymer capable of increasing the resolution of a lithography process and a pattern forming method of a semiconductor device using the same.
  • a photolithography process capable of forming an ultrafine photoresist pattern having a line width of 80 nm or less is required.
  • a photoresist composition containing a photosensitive polymer and a solvent is coated on a substrate such as a silicon wafer used for fabricating an integrated circuit, and heated to bake the solvent to evaporate the thin film.
  • a photoresist film in the form of a film is formed.
  • the chemical properties of the photosensitive polymer change in the exposed region.
  • the exposed photoresist film is treated with a developer solution to selectively dissolve and remove portions of the exposed or unexposed photoresist film to form a photoresist pattern.
  • FIG. 1 is a view showing an example of a conventional method for forming a fine photoresist pattern.
  • a photoresist film 120 is formed on the substrate 110 (A in FIG. 1), and the photoresist film 120 is predetermined.
  • the photoresist pattern 122 is formed by exposure and development in the form of an image (B of FIG.
  • a polymer for reducing line width 130 is coated on the formed photoresist pattern 122.
  • FIG. 1C the substrate coated with the line-width reducing polymer 130 is heated to bond the photoresist pattern 122 and the line-width reducing polymer 130 to form a boundary layer 32 (see FIG. 1).
  • D) By developing the unreacted linewidth reducing polymer 130 with a developer such as water (Fig. 1E), the open space between the photoresist patterns 122 is reduced, resulting in a small CD.
  • a photoresist pattern having a (Critical Dimension) may be formed. The method of forming the photoresist pattern shown in FIG. 1 is to reduce the size of the contact hole (C / H) in which the primary pattern is formed.
  • Another object of the present invention is to provide a method for forming a pattern of a semiconductor device having a high resolution by using a photoresist pattern coating polymer.
  • the present invention provides a photoresist pattern coating polymer represented by the following formula (1).
  • R * is each independently a hydrogen atom or a methyl group (-CH 3 )
  • R 1 is a linear or cyclic hydrocarbon group having 3 to 6 carbon atoms and 1 to 2 carbon atoms
  • R 2 is 5 to 20 carbon atoms Is an alkoxy benzene group or an alkoxy carbonyl group
  • x, y and z are mole% of each repeating unit with respect to all the repeating units constituting the polymer of Formula 1
  • x is from 5 to 90 mol%
  • y is from 5 to 60 mol%
  • z is 5-30 mol%.
  • the photoresist pattern coating polymer represented by the formula (1) provides a photoresist pattern coating composition comprising a solvent for dissolving the photoresist pattern coating polymer.
  • the present invention comprises the steps of applying a first photoresist on a substrate to form a photoresist film, and exposing and developing the photoresist film to form a first photoresist pattern;
  • a photoresist pattern coating composition comprising a photoresist pattern coating polymer represented by Formula 1 below and a solvent for dissolving the photoresist pattern coating polymer is applied to the first photoresist pattern, and the solvent is evaporated to form a coating film.
  • Forming a Reacting the coating film with the first photoresist pattern to form a boundary layer covering the first photoresist pattern, and developing and removing the unreacted coating film; Applying a second resist to a space between the boundary layers to form a second resist pattern; And developing and removing the boundary layer, and leaving a first photoresist pattern and a second resist pattern.
  • the first photoresist pattern is coated, developed with deionized water, or the like, and then a second (photo) resist pattern is formed again in the developed space region, thereby forming a space of the first photoresist pattern.
  • the line width of the part can be reduced.
  • a double pattern is formed in the space between the lines of the first photoresist pattern so that the second (photo) resist pattern is self aligned. This can reduce the number of alignment errors that can occur.
  • FIG. 1 is a view showing an example of a conventional method for forming a fine photoresist pattern.
  • FIG. 2 is a view showing an example of a pattern forming method of a semiconductor device according to the present invention.
  • FIG. 3 is an electron scanning micrograph of a resist pattern formed according to the method for forming a pattern of a semiconductor device according to the present invention.
  • the polymer for coating a photoresist pattern according to the present invention forms a boundary layer (coating layer) covering the photoresist pattern by reacting with the photoresist pattern, and is represented by the following Chemical Formula 1.
  • R * are each independently a hydrogen atom or a methyl group (-CH 3 ), R 1 is a linear or cyclic hydrocarbon group having 3 to 6 carbon atoms and 1 to 2 carbon atoms, preferably imidazole Heterocyclic group, such as a) group, a lactam group, or a carbonyl group containing an amine group, such as an amide group.
  • R 2 is an alkoxy benzene group or an alkoxy carbonyl group having 5 to 20 carbon atoms, preferably 5 to 13 carbon atoms, and the alkoxy group of R 2 may be a linear or cyclic alkoxy group, and preferably, It is a C1-C2 alkoxy group which the linear or cyclic alkoxy group couple
  • Specific examples of the alkoxy group included in R 2 may include methyl adamantaneoxy group, 1-ethoxy-ethoxy group, 1-cyclohexylmethoxy-ethoxy group, cyclohexyloxy-methoxy group, and the like. .
  • x, y and z are mole% of each repeating unit with respect to the total repeating units constituting the polymer of Formula 1
  • x is 5 to 90 mol%, preferably 10 to 80 mol%, More preferably 15 to 70% by weight
  • y is 5 to 60 mol%, preferably 10 to 50 mol%, more preferably 15 to 40 mol%
  • z is 5 to 30 mol%, preferably 10 to 20 mol%, more preferably 12 to 18 mol%.
  • the content of x is too small, the solubility in deionized water is lowered, and if it is too high, the adhesion to the photoresist pattern may be lowered.
  • the adhesion to the pattern may be lowered, and the adhesion to the pattern may not be adhered. If the content of y is too large, the solubility in deionized water may be lowered. In addition, when the content of z is too small, solubility in deionized water may be lowered.
  • polymer for coating a photoresist pattern according to the present invention may be represented by the following Chemical Formulas 2 to 10.
  • Chemical Formulas 2 to 10 x, y, and z are as defined in Chemical Formula 1.
  • the photoresist pattern coating polymer according to the present invention R *, R 1, R 2, such as vinyl (vinyl) can be polymerized prepared by the monomers by conventional methods, including, where azobis (isobutyronitrile) (AIBN) and so on can be used a conventional polymerization initiator, have.
  • AIBN azobis (isobutyronitrile)
  • the content of each repeating unit is proportional to the content of the monomers used.
  • the photoresist pattern coating polymer according to the present invention may be a block or a random copolymer, the weight average molecular weight (Mw) is preferably 5,000 to 100,000, more preferably 5,000 to 20,000.
  • the polydispersity (PD) of the polymer is preferably 1.0 to 5.0, and more preferably 1.0 to 2.0. If the weight average molecular weight and the polydispersity are outside the above ranges, there is a concern that the physical properties of the coating film coating the photoresist pattern may be lowered. Since the photoresist pattern coating polymer according to the present invention includes an amine group in a molecule, not only the adhesion to the photoresist pattern is easy, but also the coating is possible without damaging the photoresist pattern.
  • the polymer for coating a photoresist pattern according to the present invention includes an alkoxy benzene group or an alkoxy carbonyl group as R 2 , and therefore, even after being adhered by exposure and heating, the polymer is applied to the developer by deprotection of the protecting group. It can be easily dissolved and removed, and the contrast of the developing process is excellent.
  • the polymer for coating a photoresist pattern according to the present invention is dissolved in a solvent and used in the form of a composition.
  • Water preferably deionized water
  • a mixed solvent of water and alcohol may be used, if necessary.
  • the content of the polymer represented by the formula (1) is 0.5 to 30% by weight, preferably 3 to 10% by weight, and the remaining components are solvents. If the content of the polymer is too small, there is a risk that the polymer layer remaining after coating is too thin to form a coating film of a desired thickness, and if the content of the polymer is too large, coating uniformity may be lowered.
  • examples of the alcohol which may be used together with water may include lower alcohols having 1 to 4 carbon atoms such as methanol and ethanol, and the amount of the alcohol may be used for the entire composition. 0-50% by weight, preferably 1-50% by weight, more preferably 5-25% by weight.
  • the content of the alcohol component is too small, there is a fear that the coating uniformity is lowered, and if the content of the alcohol component is too large, there is a fear that the initial pattern is not dissolved to form a secondary pattern.
  • the composition for coating a photoresist pattern according to the present invention may further include an organic base, a surfactant, and the like as a conventional photo acid generator (PAG), a resist stabilizer (Quencher).
  • the photoacid generator generates an acid by exposure and serves to deprotect the protecting group of the polymer for coating the photoresist pattern, and any compound capable of generating an acid by light may be used.
  • sulfide salt compounds such as organic sulfonic acid
  • onium salt compounds such as an onium salt, etc. can be used individually or in mixture.
  • Non-limiting examples of the photoacid generator include phthalimidotrifluoro methane sulfonate, dinitrobenzyl tosylate, n-decyl disulfone, naphthyl imido tree Fluoromethanesulfonate (naphthylimido trifluoromethane sulfonate), diphenyl iodo salt hexafluorophosphate, diphenyl iodo salt hexafluoroarsenate, diphenyl iodo salt hexafluoro antimonate, diphenyl paramethoxyphenyl sulfonium triflate, Triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate, mixtures thereof, and the like.
  • the content thereof is preferably 0 to 20 parts by weight, more preferably 0.05 to 20 parts by weight, and most preferably 0.1 to 10 parts by weight based on 100 parts by weight of the polymer. If the content of the photoacid generator is too small, the sensitivity of the polymer to light may be reduced, so that the deprotection of the protecting group may be insufficient. If the content of the photoacid generator is excessive, excessive acid may be generated in the photoacid generator, resulting in a poor shape of the coating film. There is concern.
  • the surfactant that can be used in the present invention it is preferable to use a water-soluble surfactant, and anionic surfactants, cationic surfactants and amphoteric surfactants can be used, for example, alkylbenzene sulfonate-based and higher amine halogens.
  • a cargo, a quaternary ammonium salt type, an alkyl pyridinium salt type, an amino acid type, a sulfonimide type, and a sulfonamide type surfactant can be used alone or in combination.
  • the amount of the surfactant used is 0.01 to 2 parts by weight, preferably 0.1 to 1 part by weight based on 100 parts by weight of the total photoresist pattern coating composition.
  • the amount of the surfactant is too small, there is a possibility that the uniformity of the coating portion during the film formation may be lowered. If the amount of the surfactant is too large, the loss of the film increases in the process of removing the coating film with water, thereby effectively forming the coating film on the primary pattern. There is a fear of not.
  • the photoresist pattern coating step is substantially the same as that shown in FIG. That is, the photoresist film 20 is formed by applying a first photoresist on a substrate 10 such as a silicon wafer or aluminum (FIG. 2A), and the photoresist film 20 is formed in a predetermined shape (image). ) To form a first photoresist pattern 22 (FIG. 2B), and then apply the photoresist pattern coating composition according to the present invention to the first photoresist pattern 22 and evaporate the solvent. To form a coating film 30 (C in Fig. 2).
  • the first photoresist pattern 22 and the polymer for coating the photoresist pattern are adhered to each other by heating the coating layer 30, or the acid inside the first photoresist pattern 22 ( acid) diffuses into the photoresist pattern coating polymer to form a boundary layer 32 (cap material) covering the first photoresist pattern 22 (D in FIG. 2), and then the unreacted portion of the coating film 30.
  • a developer such as water, an alcohol, an aqueous alkali solution, a mixture thereof, or the like (E of FIG. 2), the open space between the first photoresist patterns 22 is reduced.
  • the first photoresist pattern 22 is coated with the boundary layer 32 to reduce the width of the space, and the second resist is applied to the reduced space to form the second resist pattern 42. (F in FIG. 2).
  • the strength of the second resist pattern 42 may be improved by exposing or heating the second resist pattern 42 formed as described above and diffusing acid into the second resist pattern layer 42.
  • the second resist is preferably a photosensitive photoresist whose physical properties are changed by exposure.
  • the boundary layer 32 (CAP material) is developed again using an alkaline aqueous solution in which alkaline compounds such as sodium hydroxide, potassium hydroxide, sodium carbonate, and tetramethylammonium hydroxide (TMAH) are dissolved at a concentration of 0.1 to 10% by weight.
  • alkaline compounds such as sodium hydroxide, potassium hydroxide, sodium carbonate, and tetramethylammonium hydroxide (TMAH) are dissolved at a concentration of 0.1 to 10% by weight.
  • TMAH tetramethylammonium hydroxide
  • the substrate 10 is etched using the formed photoresist patterns 22 and 42 as a mask, or an open portion of the substrate 10 is formed.
  • the pattern of the semiconductor element can be formed.
  • ArF or KrF resist may be used as the photoresist for forming the first and second photoresist patterns 22 and 42.
  • the photoresist pattern coating polymer according to the present invention is used as a cap material for securing a space for forming a second pattern, so as to form a double pattern. do.
  • VP 1-vinyl-pyrrolidone
  • DAEMA 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethylester
  • PEES 2-acrylic acid-2-dimethylamino-ethyle
  • Example 1-1 Same as Example 1-1, except that 7.9 g (0.08 mol) of dimethylacrylamide (hereafter DMAA) was used instead of 11.4 g (0.08 mol) of 2-acrylic acid-2-dimethylamino-ethyl ester (DAEMA)
  • DMAA dimethylacrylamide
  • DAEMA 2-acrylic acid-2-dimethylamino-ethyl ester
  • Example 1-1 The same method as Example 1-1, except that 11.1 g (0.08 mol) of vinyl caprolactam (hereinafter VC) was used instead of 11.4 g (0.08 mol) of 2-acrylic acid-2-dimethylamino-ethyl ester (DAEMA).
  • VC vinyl caprolactam
  • DAEMA 2-acrylic acid-2-dimethylamino-ethyl ester
  • Example 1- except that 10.1 g (0.08 mol) of 1-vinyl-piperidin-2-one was used instead of 11.4 g (0.08 mol) of 2-acrylic acid-2-dimethylamino-ethylester (DAEMA)
  • DAEMA 2-acrylic acid-2-dimethylamino-ethylester
  • Mw, Mn weight average and number average molecular weights
  • PD polydispersity
  • Example 1- except that 3.08 g (0.02 mol) of acrylic acid 1-methyl-cyclopentyl ether was used instead of 3.84 g (0.02 mol) of 1- (1-ethoxy-ethoxy) -4-vinyl-benzene.
  • 2.7 g of the photoresist pattern coating polymer (Formula 2 to 10) synthesized in Examples 1-1 to 1-9 and a water-soluble surfactant (sulfonamide-based interface of TCI) Activator) 0.3 g and 0.15 g of photoacid generator (triphenylsulfonium triflate) are completely dissolved in 17.0 g of deionized water or a mixed solvent of deionized water and isopropanol 6: 4, and filtered through a 0.2 ⁇ m disk filter to obtain a photoresist.
  • a composition for pattern coating was prepared.
  • Mw molecular weight
  • PD polydispersity
  • a: b: c (mol%) 45: 40: 15
  • triphenylsulfonium 0.02 g of triflate and 0.01 g of triethanolamine were dissolved in 10 g of propylene glycol monomethyl ether acetate (PGMEA), and then filtered through a 0.2 ⁇ m filter to prepare a photoresist composition.
  • first photoresist pattern a 50 nm 1: 3 line and space pattern (first photoresist pattern) was formed.
  • the film was heated in an oven or hotplate at 150 ° C. for 60 seconds.
  • the first photoresist pattern was coated by soft bake and developed by immersion in deionized water or 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution for 60 seconds to form (boundary layer formation).
  • TMAH tetramethylammonium hydroxide
  • Example 3-1 50 nm 71 nm
  • Example 3-2 50 nm 68 nm
  • Example 3-3 50 nm 72 nm
  • Example 3-4 50 nm 66 nm
  • Example 3-5 50 nm 65 nm
  • Example 3-6 50 nm 68 nm
  • Example 3-7 50 nm 71 nm
  • Example 3-8 50 nm 61 nm
  • Example 3-9 50 nm 63 nm
  • Example 3-10 50 nm 61 nm
  • the second resist pattern can be easily formed in the 1: 3 line and space portion by the self double patterning process according to the present invention. Therefore, when the second resist pattern is formed using the photoresist pattern coating polymer according to the present invention, the mask alignment process of the semiconductor exposure apparatus using the existing 193 nm, 248 nm and other light sources is unnecessary, and the wafer is heated. And only the development process, it is possible to perform a self-double patterning process.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un polymère pour revêtir un motif de photorésine, qui peut améliorer la résolution d'un procédé de lithographie, ainsi qu'un procédé pour former un motif d'un dispositif à semi-conducteurs au moyen dudit polymère. Ledit polymère pour revêtir un motif de photorésine est représenté par la formule chimique (1) de la première revendication. Dans la formule chimique (1), R* représente indépendamment un atome d'hydrogène ou un groupe méthyle (-CH3), R1 représente un groupe hydrocarbure linéaire ou cyclique comprenant 3 à 6 atomes de carbone et 1 à 2 atomes d'azote, R2 représente un groupe alcoxybenzène ou un groupe alcoxycarboxyle comprenant 5 à 20 atomes de carbone, et x, y et z représentent chacun un pourcentage molaire de chaque unité répétitive en fonction de la totalité du polymère de ladite formule chimique, x représentant 5 à 90 % molaire, y représentant 5 à 60 % molaire, et z représentant 5 à 30 % molaire.
PCT/KR2010/001227 2009-02-27 2010-02-26 Polymère pour revêtir un motif de photorésine, et procédé pour former un motif pour un dispositif à semi-conducteurs faisant intervenir ledit polymère WO2010098618A2 (fr)

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KR10-2009-0016981 2009-02-27
KR1020090016981A KR101672720B1 (ko) 2009-02-27 2009-02-27 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법

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WO2010098618A3 WO2010098618A3 (fr) 2010-12-02

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Cited By (1)

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CN114942569A (zh) * 2021-02-15 2022-08-26 Olas有限公司 感光性高分子及包含它的抗蚀剂组合物

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KR102193680B1 (ko) * 2014-08-14 2020-12-21 삼성전자주식회사 반도체 소자의 제조 방법
JP6823992B2 (ja) * 2016-10-12 2021-02-03 東京応化工業株式会社 レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物
JP6886844B2 (ja) * 2017-03-16 2021-06-16 東京応化工業株式会社 レジストパターン形成方法

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US20030059709A1 (en) * 2001-04-19 2003-03-27 Shipley Company, L.L.C. Photoresist composition
US20040202838A1 (en) * 2002-10-24 2004-10-14 Eastman Kodak Company Overcoat composition for image recording materials
US20060100306A1 (en) * 2004-11-09 2006-05-11 Eastman Kodak Company Ink jet ink composition
JP2006189760A (ja) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc フォトレジストパターンコーティング用水溶性組成物及びこれを用いた微細パターン形成方法

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US5527656A (en) 1993-04-27 1996-06-18 Kansai Paint Co., Ltd. Positive type electrodeposition photoresist compositions
US20030008968A1 (en) * 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
KR100737851B1 (ko) * 2006-07-07 2007-07-12 제일모직주식회사 미세패턴 형성용 수지 조성물 및 이를 이용한 미세패턴형성방법

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US20030059709A1 (en) * 2001-04-19 2003-03-27 Shipley Company, L.L.C. Photoresist composition
US20040202838A1 (en) * 2002-10-24 2004-10-14 Eastman Kodak Company Overcoat composition for image recording materials
US20060100306A1 (en) * 2004-11-09 2006-05-11 Eastman Kodak Company Ink jet ink composition
JP2006189760A (ja) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc フォトレジストパターンコーティング用水溶性組成物及びこれを用いた微細パターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114942569A (zh) * 2021-02-15 2022-08-26 Olas有限公司 感光性高分子及包含它的抗蚀剂组合物

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WO2010098618A3 (fr) 2010-12-02
TW201035256A (en) 2010-10-01
KR20100098024A (ko) 2010-09-06
KR101672720B1 (ko) 2016-11-07

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