WO2010095847A3 - 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법 - Google Patents

웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법 Download PDF

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Publication number
WO2010095847A3
WO2010095847A3 PCT/KR2010/000973 KR2010000973W WO2010095847A3 WO 2010095847 A3 WO2010095847 A3 WO 2010095847A3 KR 2010000973 W KR2010000973 W KR 2010000973W WO 2010095847 A3 WO2010095847 A3 WO 2010095847A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion
wafer
same
wafer defect
decoration
Prior art date
Application number
PCT/KR2010/000973
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English (en)
French (fr)
Other versions
WO2010095847A2 (ko
Inventor
한호
Original Assignee
주식회사 한스머신
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 한스머신 filed Critical 주식회사 한스머신
Priority to US13/148,254 priority Critical patent/US20110290646A1/en
Priority to SG2011059144A priority patent/SG173728A1/en
Priority to JP2011550068A priority patent/JP2012517714A/ja
Publication of WO2010095847A2 publication Critical patent/WO2010095847A2/ko
Publication of WO2010095847A3 publication Critical patent/WO2010095847A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/50—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 웨이퍼 표면의 결함 분석을 위한 웨이퍼 결함 부위의 이온 데코레이션을 함에 있어서 데코레이션 작업과 이온 추출 작업을 별도로 분리하고 이온 추출이 완료된 전해액이 순환되도록 하여 데코레이션 작업 시 번거롭고 긴 시간이 소요되는 과정을 최소화시켜 전체 데코레이션에 소요되는 시간을 획기적으로 단축시켜 종국적으로 웨이퍼 결함 분석 시간의 단축과 결함 분석의 효율성을 향상시키도록 하는 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법을 제공한다. 또한, 데코레이션 작업을 위한 이온 추출 시 이온의 활동성을 향상시켜 이온 추출 시간을 획기적으로 단축시키도록 하는 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법을 제공한다.
PCT/KR2010/000973 2009-02-17 2010-02-17 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법 WO2010095847A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/148,254 US20110290646A1 (en) 2009-02-17 2010-02-17 Wafer defect analyzing apparatus, ion abstraction apparatus for same, and wafer defect analyzing method using same
SG2011059144A SG173728A1 (en) 2009-02-17 2010-02-17 Wafer defect analyzing apparatus, ion abstraction apparatus for same, and wafer defect analyzing method using same
JP2011550068A JP2012517714A (ja) 2009-02-17 2010-02-17 ウエハ欠陥分析装置及びこれに用いられるイオン抽出装置、並びに該ウエハ欠陥分析装置を用いるウエハ欠陥分析方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090012853A KR100928666B1 (ko) 2009-02-17 2009-02-17 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법
KR10-2009-0012853 2009-02-17

Publications (2)

Publication Number Publication Date
WO2010095847A2 WO2010095847A2 (ko) 2010-08-26
WO2010095847A3 true WO2010095847A3 (ko) 2010-12-09

Family

ID=41605464

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000973 WO2010095847A2 (ko) 2009-02-17 2010-02-17 웨이퍼 결함 분석장치 및 이에 이용되는 이온추출장치와 이를 이용한 웨이퍼 결함 분석방법

Country Status (5)

Country Link
US (1) US20110290646A1 (ko)
JP (1) JP2012517714A (ko)
KR (1) KR100928666B1 (ko)
SG (1) SG173728A1 (ko)
WO (1) WO2010095847A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321173A (ja) * 1994-05-26 1995-12-08 Mitsubishi Materials Corp 半導体ウェーハの内部欠陥測定装置
KR20010024470A (ko) * 1997-10-10 2001-03-26 리차드 피. 뮐러 불용성 애노드를 사용한 실리콘 웨이퍼의 구리 금속화
KR20010030954A (ko) * 1998-09-08 2001-04-16 마에다 시게루 기판도금장치
JP2002083853A (ja) * 2000-06-27 2002-03-22 Shin Etsu Handotai Co Ltd 半導体ウェーハの評価方法及び装置
KR20040010786A (ko) * 2001-06-29 2004-01-31 데 노라 엘레트로디 에스.피.에이. 전기도금 공정에서 금속 이온의 농도 회복용 전기분해조

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521102B1 (en) * 2000-03-24 2003-02-18 Applied Materials, Inc. Perforated anode for uniform deposition of a metal layer
JP2004140129A (ja) * 2002-10-17 2004-05-13 Renesas Technology Corp 絶縁膜の欠陥検出方法及びその装置
JP3909041B2 (ja) * 2003-07-04 2007-04-25 新日本製鐵株式会社 電気めっき用溶性電極の鉄系スラッジ除去方法および除去装置
JP4242248B2 (ja) * 2003-10-22 2009-03-25 石川金属工業株式会社 不溶性陽極を使用する錫めっき方法
JP2007169771A (ja) * 2005-12-19 2007-07-05 Tadamasa Fujimura 細管内壁へのめっき方法及び該めっき方法により製造された細管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321173A (ja) * 1994-05-26 1995-12-08 Mitsubishi Materials Corp 半導体ウェーハの内部欠陥測定装置
KR20010024470A (ko) * 1997-10-10 2001-03-26 리차드 피. 뮐러 불용성 애노드를 사용한 실리콘 웨이퍼의 구리 금속화
KR20010030954A (ko) * 1998-09-08 2001-04-16 마에다 시게루 기판도금장치
JP2002083853A (ja) * 2000-06-27 2002-03-22 Shin Etsu Handotai Co Ltd 半導体ウェーハの評価方法及び装置
KR20040010786A (ko) * 2001-06-29 2004-01-31 데 노라 엘레트로디 에스.피.에이. 전기도금 공정에서 금속 이온의 농도 회복용 전기분해조

Also Published As

Publication number Publication date
WO2010095847A2 (ko) 2010-08-26
KR100928666B1 (ko) 2009-11-27
JP2012517714A (ja) 2012-08-02
US20110290646A1 (en) 2011-12-01
SG173728A1 (en) 2011-09-29

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