WO2010091045A3 - Composition ne contenant pas de fluorure pour l'élimination de polymères et autres matières organiques à partir d'une surface - Google Patents

Composition ne contenant pas de fluorure pour l'élimination de polymères et autres matières organiques à partir d'une surface Download PDF

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Publication number
WO2010091045A3
WO2010091045A3 PCT/US2010/022987 US2010022987W WO2010091045A3 WO 2010091045 A3 WO2010091045 A3 WO 2010091045A3 US 2010022987 W US2010022987 W US 2010022987W WO 2010091045 A3 WO2010091045 A3 WO 2010091045A3
Authority
WO
WIPO (PCT)
Prior art keywords
polymers
removal
organic material
containing composition
fluoride containing
Prior art date
Application number
PCT/US2010/022987
Other languages
English (en)
Other versions
WO2010091045A2 (fr
Inventor
Michael B. Korzenski
Ping Jiang
John Warner
Ted Mendum
Michelle Lugus
Justin Whitfield
Helen Vanbenschoten
Makonnen Payne
Original Assignee
Advanced Technology Materials, Inc.
The Warner-Babcock Institute For Green Chemistry, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials, Inc., The Warner-Babcock Institute For Green Chemistry, Llc filed Critical Advanced Technology Materials, Inc.
Publication of WO2010091045A2 publication Critical patent/WO2010091045A2/fr
Publication of WO2010091045A3 publication Critical patent/WO2010091045A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Detergent Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention porte sur des compositions d'élimination et des procédés d'élimination de polymères et/ou autres matières organiques à partir d'une surface sur laquelle ils et/ou elles se trouvent. La composition semi-aqueuse est sensiblement exempte d'espèces fluorures.
PCT/US2010/022987 2009-02-05 2010-02-03 Composition ne contenant pas de fluorure pour l'élimination de polymères et autres matières organiques à partir d'une surface WO2010091045A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15021609P 2009-02-05 2009-02-05
US61/150,216 2009-02-05

Publications (2)

Publication Number Publication Date
WO2010091045A2 WO2010091045A2 (fr) 2010-08-12
WO2010091045A3 true WO2010091045A3 (fr) 2010-11-25

Family

ID=42542621

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/022987 WO2010091045A2 (fr) 2009-02-05 2010-02-03 Composition ne contenant pas de fluorure pour l'élimination de polymères et autres matières organiques à partir d'une surface

Country Status (2)

Country Link
TW (1) TW201107464A (fr)
WO (1) WO2010091045A2 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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CN103003923A (zh) 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
BR112013003854A2 (pt) 2010-08-20 2016-06-07 Advanced Tech Materials processo sustentável para reivindicação de metais preciosos e metais de base oriundo de resíduo e
TWI502065B (zh) 2010-10-13 2015-10-01 Entegris Inc 抑制氮化鈦腐蝕之組成物及方法
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
WO2013101907A1 (fr) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions et procédés pour l'attaque sélective de nitrure de titane
JP2015512971A (ja) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド 組成物を使用したｃｍｐ後除去及び使用方法
TW201406932A (zh) 2012-05-18 2014-02-16 Advanced Tech Materials 用於自包含氮化鈦之表面脫除光阻劑之組成物及方法
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
SG10201706443QA (en) 2013-03-04 2017-09-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
TWI683889B (zh) 2013-07-31 2020-02-01 美商恩特葛瑞斯股份有限公司 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Ｃｕ／Ｗ相容性的水性配方
WO2015031620A1 (fr) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions et procédés pour effectuer la gravure sélective du nitrure de titane
WO2015095175A1 (fr) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Compositions de gravure sélectives de type ni:nige:ge et leur procédé d'utilisation
EP3084809A4 (fr) 2013-12-20 2017-08-23 Entegris, Inc. Utilisation d'acides forts non oxydants pour l'élimination de photorésine implantée par des ions
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (fr) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Formulations de post-polissage chimico-mécanique et méthode d'utilisation associée
WO2015119925A1 (fr) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
FR3023484B1 (fr) * 2014-07-11 2018-10-12 R&D Pharma Preparations antifongiques destinees au traitement local des onychomycoses
TWI690780B (zh) * 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
KR20180087624A (ko) * 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102650361B1 (ko) 2018-10-03 2024-03-22 후지필름 가부시키가이샤 약액 및 약액 수용체
CN115418647B (zh) * 2022-08-19 2024-01-05 广东红日星实业有限公司 一种除蜡水及其制备方法和应用

Citations (9)

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EP0267540A2 (fr) * 1986-11-10 1988-05-18 J.T. Baker Inc. Compositions pour le dépouillement et leur utilisation pour dépouiller les couches de réserves sur substrat
WO1999045443A1 (fr) * 1998-03-03 1999-09-10 Silicon Valley Chemlabs, Inc. Composition et procede permettant d'enlever les residus de photoresine et les residus de gravure a l'aide de carboxylates d'hydroxylammonium
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
JP2004212858A (ja) * 2003-01-08 2004-07-29 Tokuyama Corp 基板洗浄液
WO2005093032A1 (fr) * 2004-03-01 2005-10-06 Mallinckrodt Baker, Inc. Compositions de nettoyage nanoelectronique et microelectronique
WO2006107169A1 (fr) * 2005-04-06 2006-10-12 Dongjin Semichem Co., Ltd. Composition pour décaper des résines photosensibles pour dispositif semi-conducteur
WO2007047365A2 (fr) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Composition d'enlevement de photoresine et/ou de revetement antireflet sacrificiel, compatible avec les metaux
KR20080017848A (ko) * 2006-08-22 2008-02-27 동우 화인켐 주식회사 포토레지스트 박리액 및 이를 이용한 박리 방법
KR20080054714A (ko) * 2006-12-13 2008-06-19 동우 화인켐 주식회사 레지스트 박리용 알칼리 조성물

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0267540A2 (fr) * 1986-11-10 1988-05-18 J.T. Baker Inc. Compositions pour le dépouillement et leur utilisation pour dépouiller les couches de réserves sur substrat
WO1999045443A1 (fr) * 1998-03-03 1999-09-10 Silicon Valley Chemlabs, Inc. Composition et procede permettant d'enlever les residus de photoresine et les residus de gravure a l'aide de carboxylates d'hydroxylammonium
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
JP2004212858A (ja) * 2003-01-08 2004-07-29 Tokuyama Corp 基板洗浄液
WO2005093032A1 (fr) * 2004-03-01 2005-10-06 Mallinckrodt Baker, Inc. Compositions de nettoyage nanoelectronique et microelectronique
WO2006107169A1 (fr) * 2005-04-06 2006-10-12 Dongjin Semichem Co., Ltd. Composition pour décaper des résines photosensibles pour dispositif semi-conducteur
WO2007047365A2 (fr) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Composition d'enlevement de photoresine et/ou de revetement antireflet sacrificiel, compatible avec les metaux
KR20080017848A (ko) * 2006-08-22 2008-02-27 동우 화인켐 주식회사 포토레지스트 박리액 및 이를 이용한 박리 방법
KR20080054714A (ko) * 2006-12-13 2008-06-19 동우 화인켐 주식회사 레지스트 박리용 알칼리 조성물

Also Published As

Publication number Publication date
TW201107464A (en) 2011-03-01
WO2010091045A2 (fr) 2010-08-12

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