WO2010090055A1 - Structure de connexion d'électrode et procédé de fabrication de celle-ci - Google Patents

Structure de connexion d'électrode et procédé de fabrication de celle-ci Download PDF

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Publication number
WO2010090055A1
WO2010090055A1 PCT/JP2010/050263 JP2010050263W WO2010090055A1 WO 2010090055 A1 WO2010090055 A1 WO 2010090055A1 JP 2010050263 W JP2010050263 W JP 2010050263W WO 2010090055 A1 WO2010090055 A1 WO 2010090055A1
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electrode
electrodes
carbon nanotube
bonding material
embedded
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PCT/JP2010/050263
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English (en)
Japanese (ja)
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木村　哲也
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株式会社村田製作所
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Priority to JP2010549418A priority Critical patent/JP5625915B2/ja
Publication of WO2010090055A1 publication Critical patent/WO2010090055A1/fr

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H05K1/111—Pads for surface mounting, e.g. lay-out
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electrode joint structure that achieves electrical continuity by joining the electrodes with a conductive substance when mounting an electronic component or the like, and a manufacturing method thereof.
  • conductive materials such as solder and bumps have been widely used to reduce the mounting area in electrical joints between electrodes, for example, joints when electronic components are mounted on a substrate.
  • Patent Document 1 discloses an electrode joint structure for an electronic component as shown in FIG. An electronic component 11 is mounted on the substrate 12. The electrodes 13 of the electronic component 11 and the electrodes 14 of the mounting substrate 12 are joined via bumps 15. In this way, the electronic component 11 is mounted on the substrate 12 to constitute an electronic circuit.
  • the conventional electrode bonding structure has a problem that since the bonding area between the electrodes is small, the bonding strength between the electrodes is also small.
  • An object of the present invention is to provide an electrode bonding structure that can increase the bonding strength between the electrodes, thereby improving the reliability and further reducing the size of the bonding portion.
  • An electrode bonding structure for obtaining conduction between electrodes, and includes a first electrode, a second electrode electrically connected to the first electrode, and a first electrode And a conductive bonding material electrically connecting the second electrode, and a carbon nanotube partially embedded in at least one of the first and second electrodes so that a part protrudes from the surface; Is provided.
  • the protruding portion of the carbon nanotube is also embedded in the conductive bonding material.
  • An electrode bonding structure is an electrode bonding structure that obtains conduction between electrodes, and includes a first electrode, a second electrode electrically connected to the first electrode, and a first electrode And a conductive bonding material electrically connecting the second electrodes, and carbon nanotubes partially embedded in the conductive member so as to protrude from the surface.
  • the protruding portion of the carbon nanotube is also embedded in at least one of the first and second electrodes.
  • An electrode junction structure is an electrode junction structure that obtains conduction between electrodes, and includes a first electrode, a second electrode that is electrically connected to the first electrode, and a first electrode And a conductive bonding material electrically connecting the second electrode and the first electrode partially embedded in at least one of the first electrode and the second electrode so that a part thereof protrudes from the surface.
  • the carbon nanotubes and the protruding portions of the first carbon nanotubes are also embedded in the conductive bonding material, and a part of the conductive bonding material is protruded from the surface.
  • a plurality of the carbon nanotubes are provided, and the average length of the plurality of carbon nanotubes is the first and / or the carbon nanotubes partially embedded.
  • the thickness is larger than the thickness of the second electrode.
  • a plurality of the carbon nanotubes are provided, and an average length of the plurality of carbon nanotubes is larger than a thickness of the conductive bonding material.
  • the conductive bonding material is a bump or a conductive adhesive.
  • an electronic component and a substrate on which the electronic component is mounted are further provided, and one of the first and second electrodes is provided in the electronic component.
  • the other of the first and second electrodes is provided on the substrate.
  • the method for manufacturing an electrode bonding structure according to the present invention is a method for manufacturing an electrode bonding structure in which electrodes are bonded to each other with a conductive bonding material, and carbon nanotubes are partially embedded so that a part thereof protrudes from the surface.
  • a method for producing an electrode joint structure in which electrodes are joined with a conductive joining material, wherein carbon nanotubes are partially separated from the surface.
  • a step of preparing a conductive bonding material embedded so as to protrude, and a conductive bonding material in which the carbon nanotubes are partially embedded between one electrode to be bonded and the other electrode And a step of joining so that the protruding portion of the carbon nanotube is embedded in at least one of the electrodes.
  • the carbon nanotubes are arranged so as to be embedded in both the electrode side and the conductive bonding material side at the boundary of the bonding portion. Therefore, the bonding between the electrode and the conductive bonding material is reinforced by the mechanical strength of the carbon nanotube. Therefore, even if the bonding area is reduced, the reliability can be improved. In addition, since the bonding strength per unit area is increased, the area of the bonded portion can be reduced. Therefore, further miniaturization and higher integration of components can be achieved.
  • FIG. 1 is a front sectional view showing an electrode bonding structure according to a first embodiment of the present invention.
  • FIG. 2 is a front sectional view showing an electrode bonding structure according to a second embodiment of the present invention.
  • 3 (a) to 3 (d) are front sectional views for explaining a method of manufacturing an electrode joint structure according to the first embodiment of the present invention.
  • 4A to 4D are front sectional views for explaining a method for manufacturing an electrode joint structure according to a second embodiment of the present invention.
  • FIG. 5 is a front sectional view showing a conventional electrode bonding structure.
  • FIG. 1 shows the electrode junction structure of the first embodiment.
  • the electronic component 1 includes an electrode 3 as a first electrode, and the electrode 3 and an electrode 4 as a second electrode formed on the mounting substrate 2 are joined. These electrodes 3 and 4 are bonded via the conductive bonding material 5.
  • the conductive bonding material can be formed using a conductive bonding material made of a metal such as a bump or solder, or a conductive bonding material formed by mixing a metal powder into a resin.
  • the conductive bonding material 5 is made of a metal bump.
  • the “electronic component” is not particularly limited, and examples thereof include a capacitor, a coil (inductor), a resistor, a vibrator, an oscillator, a filter, a MEMS element, an IC, a semiconductor element, and a module part.
  • the electrodes 3 and 4 are formed so that the carbon nanotubes 6 are partially embedded in the electrode 3 and / or the electrode 4.
  • the length of the carbon nanotube 6 in this embodiment is larger than the thickness of the electrode in which the carbon nanotube 6 is partially embedded. For this reason, a part of carbon nanotube 6 comes to protrude reliably from the surface of these electrodes.
  • the plurality of carbon nanotubes 6 are partially embedded in both the electrode 3 and the electrode 4, but the carbon nanotube 6 is partially embedded only in one of the electrode 3 and the electrode 4. May be.
  • the length of the carbon nanotube 6 used in the present invention may be smaller than the thickness of the electrode in which the carbon nanotube 6 is partially embedded. Even in such a case, it suffices if a part of the carbon nanotube 6 is projected from the electrode surface.
  • a plurality of carbon nanotubes 6 are partially embedded in the electrodes 3 and 4.
  • the length of the carbon nanotube 6 is preferably such that the average length of the plurality of carbon nanotubes 6 is larger than the thickness of the electrode in which the carbon nanotubes 6 are partially embedded as described above.
  • the conductive bonding material 5 which is a bump
  • bonding between the electrode and the metal by the bump is formed in a region where the carbon nanotube does not exist.
  • the protruding portion of the carbon nanotube 6 having a rigidity higher than that of the metal is in a state of being embedded in the bump.
  • the Young's modulus of the carbon nanotube is 1000 GPa or more, which is one or more orders of magnitude greater than the metal Young's modulus of about 100 GPa. Accordingly, the bonded portion is reinforced by the carbon nanotubes 6 having a rigidity much higher than that of the metal.
  • the carbon nanotubes 6 have a structure in which the electrodes 3 and 4 and the conductive bonding material 5 are connected by a wedge.
  • the bonding strength at the electrode bonding portion is reinforced by the mechanical strength of the carbon nanotubes 6 in addition to the bonding between the electrodes 3 and 4 and the metal between the bumps.
  • the rigidity of the carbon nanotube 6 is considerably larger than the rigidity of the metal, it is difficult to break. Therefore, even if the content of the carbon nanotube 6 is very small, the reinforcing effect of the bonding strength is remarkably high. Therefore, the bonding strength is increased.
  • the bonding strength per unit area is increased, the area of the bonding portion can be reduced.
  • Some carbon nanotubes have excellent conductivity due to the helical structure of graphite. Therefore, it is preferable to use such carbon nanotubes because the conductivity can be increased.
  • FIG. 2 shows an electrode bonding structure in the second embodiment.
  • the carbon nanotube 6 is partially embedded in a bump that is the conductive bonding material 5 in advance, and a part of the carbon nanotube 6 protrudes from the surface.
  • the thickness of the bump is about several tens of microns, at least a part of the carbon nanotube having a length of several tens of microns is reliably projected from the surface of the bump.
  • the carbon nanotubes used in the present invention may have a length that is smaller than the thickness of the bump, and may be configured so that a part thereof protrudes from the surface of the bump.
  • the bonding structure between the electrodes is formed using the bumps, the carbon nanotubes 6 are embedded in both the bumps and the electrodes 3 and 4 as in the first embodiment. Therefore, the bonding strength is increased by the mechanical strength of the carbon nanotubes 6 in addition to the bonding between the electrodes 3 and 4 and the bumps. Accordingly, the bonding strength is increased. In addition, since the bonding strength per unit area is increased, the area of the bonding portion can be reduced.
  • the carbon nanotube 6 is mixed with the conductive paste used to form the electrode 4.
  • the mixing ratio of the carbon nanotubes 6 varies depending on the case, but may be about 0.5 to 4% by weight with respect to 100% by weight of the conductive paste.
  • a conductive paste containing particles such as Ag, Cu, and Au is used as the conductive paste.
  • Carbon nanotubes have a diameter of about 5 to 20 nanometers and a length of about 5 to 30 microns.
  • the conductive paste mixed with the carbon nanotubes 6 is applied to a substrate and then baked to form an electrode. In this way, the electrode 4 shown in FIG. 3A is formed on the substrate 2. At this time, the formed electrode 4 has a thickness of about 5 microns.
  • an electronic component 1 to be mounted is prepared.
  • the electrode 3 is formed on the lower surface of the electronic component 1 by baking a conductive paste containing carbon nanotubes 6 in the same manner as described above. Also in the electrode 3, the carbon nanotube 6 is partially embedded, and a part of the carbon nanotube 6 protrudes from the surface of the electrode 3.
  • a conductive bonding material 5 made of solder bumps is formed on the electronic component 1 side.
  • the electronic component 1 is placed on the substrate 2 as shown in FIG. And it mounts on the board
  • a part of the carbon nanotube 6 is embedded in the conductive bonding material 5 side.
  • the structure is such that the electrode 4 and the conductive bonding material 5 are connected by a wedge by the carbon nanotube 6. Since the electrode 3 also includes the carbon nanotube 6, the electrode 3 and the conductive bonding material 5 have a structure connected by a wedge.
  • the manufacturing method which forms an electrode using an electrically conductive paste was shown, you may form an electrode by plating.
  • the electrode may be formed by a plating bath in which carbon nanotubes are dispersed in a plating solution.
  • an electrode including carbon nanotubes may be formed by CVD or the like.
  • the structure obtained by this manufacturing method can increase the bonding strength at the electrode bonding portion.
  • the bonding strength per unit area is increased, the area of the bonding portion can be reduced.
  • the manufacturing method in which the carbon nanotubes 6 are mixed on the electrode side is shown.
  • the manufacturing method according to the second embodiment is a conductive bonding material to be bonded, that is, conductive bonding.
  • Carbon nanotubes 6 are mixed in advance on the material 5 side. In this case, for example, about 0.5 to 4% by weight of carbon nanotubes 6 are mixed in 100% by weight of molten Au. Then, cooling and drawing are performed to produce an Au wire having a diameter of 20 microns combined with carbon nanotubes.
  • a conductive bonding material 5 made of Au bumps in which carbon nanotubes 6 are combined is formed on the electrodes 3 of the electronic component 1 by wire bumping.
  • an Au ball is formed at the tip of the Au wire, and the Au ball is pressed against the electrode 3 on the electronic component 1 to join the Au ball and the electrode 3 together.
  • the Au wire is torn off at the boundary between the Au ball and the Au wire, and an Au bump is formed on the electrode 3.
  • the thickness of the formed bump is about 15 microns.
  • FIG. 4 (c) and FIG. 4 (d) which is an enlarged view of the main part of FIG. A structure in which the adhesive bonding material 5 is connected by a wedge can be obtained.
  • solder bumps combined with carbon nanotubes may be used instead of Au bumps combined with carbon nanotubes.
  • solder paste may be used as the conductive bonding material.
  • carbon nanotubes are mixed in the solder paste, and this solder paste is placed on the electrodes of the mounting substrate and reflowed, so that the electrodes 3 and 4 and the solder are connected by the wedges by the carbon nanotubes. A structure can be obtained.
  • an electrode joint structure with increased joint strength can be obtained. Further, since the bonding strength per unit area is increased, the area of the bonded portion can be reduced.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention porte sur une structure de connexion d'électrode avec laquelle l'intensité de la connexion entre les électrodes peut être accrue et une fiabilité peut ainsi être améliorée tandis que la connexion est rendue plus petite. Une structure de connexion d'électrode par laquelle une connexion de conduction entre des électrodes est obtenue comprend : une première électrode (3) ; une seconde électrode (4) qui est connectée électriquement avec la première électrode (3) ; et un élément de connexion conducteur (5) qui connecte électriquement les première et seconde électrodes (3), (4). En outre, des nanotubes de carbone (6) qui sont partiellement incorporés dans au moins l'une des première et seconde électrodes (3), (4) sont disposés de telle sorte qu'une partie de ceux-ci se projette à partir de la surface. Les parties en saillie des nanotubes de carbone (6) sont également incorporées dans l'élément de connexion conducteur (5).
PCT/JP2010/050263 2009-02-05 2010-01-13 Structure de connexion d'électrode et procédé de fabrication de celle-ci WO2010090055A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620840B2 (en) 2014-06-27 2017-04-11 Tdk Corporation High-frequency transmission line, antenna and electronic circuit board
US9627737B2 (en) 2014-06-27 2017-04-18 Tdk Corporation High-frequency transmission line, antenna and electronic circuit board
ITUB20169865A1 (it) * 2016-01-07 2017-07-07 Osram Gmbh Procedimento per montare componenti su un substrato, substrato e dispositivo corrispondenti
WO2017192096A1 (fr) * 2016-05-06 2017-11-09 Smoltek Ab Plate-forme d'assemblage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049369A (ja) * 2004-07-30 2006-02-16 Denso Corp 電極接合構造及びその接合方法並びに導電性接着剤及びその製造方法
JP2008210954A (ja) * 2007-02-26 2008-09-11 Fujitsu Ltd カーボンナノチューブバンプ構造体とその製造方法、およびこれを用いた半導体装置
JP2008293821A (ja) * 2007-05-25 2008-12-04 Panasonic Corp 導電性ペースト、それを用いた回路基板および電子電気機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049369A (ja) * 2004-07-30 2006-02-16 Denso Corp 電極接合構造及びその接合方法並びに導電性接着剤及びその製造方法
JP2008210954A (ja) * 2007-02-26 2008-09-11 Fujitsu Ltd カーボンナノチューブバンプ構造体とその製造方法、およびこれを用いた半導体装置
JP2008293821A (ja) * 2007-05-25 2008-12-04 Panasonic Corp 導電性ペースト、それを用いた回路基板および電子電気機器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620840B2 (en) 2014-06-27 2017-04-11 Tdk Corporation High-frequency transmission line, antenna and electronic circuit board
US9627737B2 (en) 2014-06-27 2017-04-18 Tdk Corporation High-frequency transmission line, antenna and electronic circuit board
ITUB20169865A1 (it) * 2016-01-07 2017-07-07 Osram Gmbh Procedimento per montare componenti su un substrato, substrato e dispositivo corrispondenti
WO2017192096A1 (fr) * 2016-05-06 2017-11-09 Smoltek Ab Plate-forme d'assemblage
US20190267345A1 (en) * 2016-05-06 2019-08-29 Smoltek AB. Assembly platform
US10840203B2 (en) 2016-05-06 2020-11-17 Smoltek Ab Assembly platform
TWI743119B (zh) * 2016-05-06 2021-10-21 瑞典商斯莫勒科技公司 裝配平台
US11348890B2 (en) 2016-05-06 2022-05-31 Smoltek Ab Assembly platform

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