WO2010058481A1 - ウェハ接合装置 - Google Patents
ウェハ接合装置 Download PDFInfo
- Publication number
- WO2010058481A1 WO2010058481A1 PCT/JP2008/071232 JP2008071232W WO2010058481A1 WO 2010058481 A1 WO2010058481 A1 WO 2010058481A1 JP 2008071232 W JP2008071232 W JP 2008071232W WO 2010058481 A1 WO2010058481 A1 WO 2010058481A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- sample stage
- wafer
- load
- stage
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/06—Platens or press rams
- B30B15/068—Drive connections, e.g. pivotal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
Definitions
- the present invention relates to a wafer bonding apparatus, and more particularly, to a wafer bonding apparatus that presses and bonds two substrates.
- MEMS that integrates fine electrical parts and mechanical parts.
- the MEMS include a micro relay, a pressure sensor, and an acceleration sensor.
- the MEMS is desired to be manufactured using room temperature bonding that has high bonding strength and does not require pressing or heat treatment with a load.
- a wafer bonding method is known in which a plurality of devices are formed on a bonded substrate by bonding two substrates on which a plurality of patterns are formed to the bonded substrate. In such a wafer bonding method, it is desired to improve the yield of the plurality of devices, and it is desired to load the bonding surfaces more uniformly.
- Japanese Patent Application Laid-Open No. 09-321097 discloses a pressing device for a bumped workpiece that can press all the bumps against the electrode of the workpiece with a uniform force even when the bump contact surface of the bumped workpiece is inclined.
- the bumped workpiece pressing device is a bumped workpiece pressing device that presses the bump of the bumped workpiece mounted on the workpiece against the electrode of the workpiece, and a pressing element that is driven by the drive unit to move up and down,
- An elastic body that is mounted on the lower surface of the pressing element and pressed against the upper surface of the bumped workpiece, and a concave portion that allows the elastic body to bulge upward and elastically deform is formed on the lower surface of the pressing element. It is characterized by that.
- Japanese Patent Application Laid-Open No. 2007-301593 discloses a pressurizing apparatus that can apply a uniform pressurizing force to a pressurizing surface of a pressurizing object.
- the pressurizing apparatus is a pressurizing apparatus that pressurizes a pressurizing object by pressurizing a pressurizing head holding a pressurizing object with a pressurizing unit, and the pressurizing head includes a pressurizing shaft of the pressurizing unit. It has the 1st space part on it, It is characterized by the above-mentioned.
- An object of the present invention is to provide a wafer bonding apparatus that applies a load uniformly to a bonding surface of substrates to be bonded.
- a wafer bonding apparatus is bonded to a first sample table for holding a first substrate, a second sample table for holding a second substrate opposite to the first substrate, and a peripheral portion of the first sample table.
- a load transmitting unit that supports one sample stage on the first stage, and a driving device that presses the first substrate and the second substrate by driving the second sample stage with respect to the first stage are provided.
- the wafer bonding apparatus prevents a load larger than the load applied to the peripheral portion of the first substrate from being applied to the center of the first substrate when the first substrate and the second substrate are pressed against each other. The load can be uniformly applied to the first substrate and the second substrate.
- the wafer bonding apparatus further includes an angle adjusting mechanism for supporting the first sample stage on the first stage via the load transmitting unit so that the orientation of the first sample stage can be changed. That is, the load transmission unit is suitable for a wafer bonding apparatus provided with such an angle adjustment mechanism.
- the angle adjustment mechanism includes a spherical flange fixed to the first sample stage, a spherical seat fixed to the first stage, and a fixed flange that fixes the spherical flange to the spherical seat by caulking the spherical flange. . That is, the load transmission unit is suitable for a wafer bonding apparatus including such a spherical flange, a spherical seat, and a fixed flange.
- the load transmitting unit is supported by the angle adjusting mechanism when the angle adjusting mechanism and the load transmitting unit are in line contact. At this time, the load transmitting unit is preferable because the position where the load is applied from the angle adjusting mechanism is small.
- the load transmission part is formed from a plurality of pillars.
- Each of the plurality of columns has one end joined to the peripheral edge of the first sample stage and the other end joined to the angle adjusting mechanism.
- the load transmission part is formed from a plurality of pillars.
- the plurality of columns are elastically deformed so that the first substrate and the second substrate are in close contact with each other.
- FIG. 1 is a cross-sectional view showing a wafer bonding apparatus.
- FIG. 2 is a cross-sectional view showing the wafer bonding apparatus.
- FIG. 3 is a cross-sectional view showing the angle adjustment mechanism, the load transmission unit, and the lower sample stage.
- FIG. 4 is a perspective view showing the load transmitting portion.
- FIG. 5 is a cross-sectional view showing another load transmitting portion.
- FIG. 6 is a perspective view showing still another load transmission unit.
- FIG. 7 is a perspective view showing still another load transmission portion.
- FIG. 8 is a perspective view showing another angle adjustment mechanism.
- the wafer bonding apparatus 1 includes a bonding chamber 2 and a load lock chamber 3 as shown in FIG.
- the joining chamber 2 and the load lock chamber 3 are formed in a container that seals the inside from the environment.
- the wafer bonding apparatus 1 further includes a gate valve 5.
- the gate valve 5 is interposed between the bonding chamber 2 and the load lock chamber 3, and closes or opens a gate connecting the inside of the bonding chamber 2 and the load lock chamber 3.
- the load lock chamber 3 includes an upper cartridge base 6, a lower cartridge base 7, and a transfer device 8.
- the upper cartridge 11 is arranged on the upper cartridge base 6.
- the lower cartridge base 7 is provided with the lower cartridge 12.
- the load lock chamber 3 further includes a vacuum pump and a lid (not shown).
- the vacuum pump exhausts gas from the inside of the load lock chamber 3.
- An example of the vacuum pump is a turbo molecular pump that exhausts gas blades by blowing a plurality of metal blades inside.
- the lid can be opened by closing the gate that connects the outside and the inside of the load lock chamber 3 to create an atmospheric atmosphere.
- the size of the gate is larger than that of the upper cartridge 11 and the lower cartridge 12.
- the transfer device 8 transfers the upper cartridge 11 or the lower cartridge 12 from the load lock chamber 3 to the bonding chamber 2 via the gate valve 5 or from the bonding chamber 2 to the load lock chamber 3 via the gate valve 5. It is used for transporting the upper cartridge 11 or the lower cartridge 12.
- the bonding chamber 2 includes a vacuum pump 31, an ion gun 32, and an electron gun 33.
- the joining chamber 2 has an exhaust port 35 formed in a part of a wall 34 forming a container.
- the vacuum pump 31 is disposed outside the bonding chamber 2 and exhausts gas from the inside of the bonding chamber 2 through the exhaust port 35. Examples of the vacuum pump 31 include a turbo molecular pump that exhausts gas blades by blowing a plurality of metal blades inside.
- the ion gun 32 is arranged facing one irradiation direction 36 and emits charged particles accelerated toward the irradiation direction 36. Argon ions are exemplified as the charged particles.
- the ion gun 32 can be replaced with another surface cleaning device that cleans the surface of the wafer. Examples of the surface cleaning apparatus include a plasma gun and a fast atom beam source.
- the electron gun 33 is arranged so as to be directed to a target irradiated with charged particles by the ion gun 32, and emits electron
- the wall 34 is partially formed with a door 37.
- the door 37 includes a hinge 38.
- the hinge 38 supports the door 37 so as to be rotatable with respect to the wall 34.
- the wall 34 further has a window 39 formed in a part thereof.
- the window 39 is formed of a material that transmits visible light without transmitting gas.
- the window 39 may be anywhere on the wall 34 as long as the user can be irradiated with the charged particles by the ion gun 32 or the bonding state can be seen from the outside of the bonding chamber 2.
- the bonding chamber 2 further includes an upper substrate support portion 41 and a lower substrate support portion 42 therein.
- the lower substrate support portion 42 is disposed below the bonding chamber 2.
- the upper substrate support unit 41 includes an upper stage 14, an angle adjustment mechanism 15, a load transmission unit 16, an upper sample stage 17, and a pressure contact mechanism 18.
- the upper stage 14 is supported so as to be movable in the vertical direction with respect to the bonding chamber 2.
- the angle adjustment mechanism 15 supports the load transmission unit 16 on the upper stage 14.
- the load transmission unit 16 supports the upper sample stage 17 on the angle adjustment mechanism 15.
- the upper sample stage 17 includes a dielectric layer at the lower end, applies a voltage between the dielectric layer and the substrate, and adsorbs the substrate to the dielectric layer by electrostatic force.
- the pressure contact mechanism 18 translates the upper stage 14 in the vertical direction with respect to the bonding chamber 2 by a user operation.
- the ion gun 32 is configured such that when the substrate supported by the upper substrate support portion 41 and the substrate supported by the lower substrate support portion 42 are separated from each other, the substrate supported by the upper substrate support portion 41 and the lower substrate support It is directed to the space between the substrate supported by the portion 42 and directed to the inner surface of a part of the wall 34 of the bonding chamber 2. That is, the irradiation direction 36 of the ion gun 32 passes between the substrate supported by the upper substrate support portion 41 and the substrate supported by the lower substrate support portion 42, and part of the inner surface of the wall 34 of the bonding chamber 2. Intersect.
- the lower substrate support section 42 includes a lower sample stage 46 as shown in FIG.
- the lower sample stage 46 is generally formed in a disc shape.
- the lower sample stage 46 has a flat support surface on the upper surface of the cylinder.
- the lower sample stage 46 is used to hold the lower wafer 62 via the lower cartridge 12.
- the lower substrate support portion 42 further includes two alignment devices and a positioning mechanism that are not shown.
- the alignment apparatus captures an image of an alignment mark formed on the substrate held on the lower sample stage 46 by a user operation.
- the alignment apparatus further captures an image of an alignment mark formed on the substrate held on the upper sample stage 17 by a user operation when the upper sample stage 17 is close to the lower sample stage 46.
- the positioning mechanism moves the lower sample stage 46 in parallel to the horizontal direction with respect to the bonding chamber 2 by the user's operation, and the lower sample stage 46 is centered on the rotation axis parallel to the vertical direction. Rotate.
- the angle adjusting mechanism 15 includes a ball seat 51, a ball flange 52, and a fixed flange 53, as shown in FIG.
- the ball seat 51 is fixed to the upper stage 14 to form a ball seat surface.
- the spherical flange 52 is formed of a flange portion 54 and a support portion 55.
- the flange portion 54 is formed in a spherical shape that is in close contact with the ball seat surface of the ball seat 51.
- the support portion 55 is formed in a disc shape.
- the support portion 55 has a disk whose center is joined to the flange portion 54, and a support surface 56 is formed on the back surface of the surface joined to the flange portion 54.
- the fixing flange 53 is joined to the flange portion 54 of the spherical flange 52 by caulking. That is, the fixed flange 53 is formed from a split ring. The split ring is disposed so as to sandwich the flange portion 54 of the ball flange 52, and is joined to the flange portion 54 of the ball flange 52 by fastening with a bolt (not shown). The fixing flange 53 is further joined to the ball seat 51 by a fastener exemplified by a bolt so that the ball seat surface of the ball seat 51 is in close contact with the flange portion 54 of the ball flange 52.
- the load transmitting portion 16 is generally formed in a disc shape as shown in FIG.
- the load transmitting unit 16 has a recess formed in the center of the upper surface, and a support surface 58 formed on the upper surface.
- the support surface 58 is flat and is formed in a figure surrounded by two concentric circles.
- the load transmitting portion 16 has a bolt hole 59 formed at the center of the disk.
- the load transmitting portion 16 is configured such that a bolt (not shown) is inserted into the bolt hole 59 and that the bolt is fastened to the support portion 55 of the ball flange 52 as shown in FIG.
- the upper sample stage 17 is joined to the back surface of the surface on which the support surface 58 is formed.
- the upper sample stage 17 is formed in a disc shape, and the upper sample stage 17 includes a dielectric layer on the back surface of the surface to be joined to the load transmitting unit 16.
- the upper sample stage 17 attracts the upper wafer 61 to the dielectric layer by electrostatic force when a voltage is applied to the dielectric layer.
- the operator In the operation for bonding wafers using the wafer bonding apparatus 1, the operator first measures the orientation of the upper sample stage 17.
- the operator uses the angle adjustment mechanism 15 to move the upper side when the holding surface for holding the upper wafer 61 of the upper sample stage 17 is not parallel to the holding surface for holding the lower wafer 62 of the lower sample stage 46. Adjustment is made so that the holding surface of the sample stage 17 and the holding surface of the lower sample stage 46 are parallel to each other. That is, the operator caulks and fixes the spherical flange 52 with the fixing flange 53 so that the holding surface of the upper sample stage 17 and the holding surface of the lower sample stage 46 are parallel, and the fixing flange 53 is fixed to the ball seat 51. Fix it.
- the operator closes the gate valve 5, generates a vacuum atmosphere inside the bonding chamber 2 using the vacuum pump 31, and generates an atmospheric pressure atmosphere inside the load lock chamber 3.
- the operator opens the lid of the load lock chamber 3, places the upper cartridge 11 on the upper cartridge base 6, and places the lower cartridge 12 on the lower cartridge base 7.
- the operator places the upper wafer 61 on the upper cartridge 11.
- the operator places the lower wafer 62 on the lower cartridge 12.
- the operator closes the lid of the load lock chamber 3 to generate a vacuum atmosphere inside the load lock chamber 3.
- the operator opens the gate valve 5 after a vacuum atmosphere is generated inside the load lock chamber 3.
- the operator first holds the upper wafer 61 on the upper sample stage 17.
- the operator first transports the upper cartridge 11 using the transport device 8 so that the lower sample stage 46 holds the upper cartridge 11 on which the upper wafer 61 is placed.
- the operator retracts the transfer device 8 into the load lock chamber 3.
- the operator lowers the upper sample stage 17 vertically downward to bring the dielectric layer of the upper sample stage 17 into contact with the upper wafer 61 and hold the upper wafer 61 on the upper sample stage 17.
- the operator raises the upper sample stage 17 in the vertical upward direction and separates the upper wafer 61 from the upper cartridge 11.
- the operator uses the transfer device 8 to transfer the upper cartridge 11 on which the upper wafer 61 is not placed from the lower sample table 46 to the upper cartridge table 6.
- the operator holds the upper wafer 61 on the upper sample stage 17 and then uses the transfer device 8 so that the lower sample stage 46 holds the lower cartridge 12 on which the lower wafer 62 is placed.
- the cartridge 12 is conveyed.
- the operator closes the gate valve 5 and presses and joins the upper wafer 61 held on the upper sample stage 17 and the lower wafer 62 held on the lower sample stage 46. In other words, the operator places a gap between the upper wafer 61 and the lower wafer 62 in a state where the upper wafer 61 held on the upper sample stage 17 and the lower wafer 62 held on the lower sample stage 46 are separated.
- the ion gun 32 is directed to emit particles. The particles are irradiated on the upper wafer 61 and the lower wafer 62 to remove oxides and the like formed on the surfaces thereof, and to remove impurities adhering to the surfaces.
- the operator operates the pressure contact mechanism 18 to lower the upper sample stage 17 in the vertically downward direction so that the upper wafer 61 and the lower wafer 62 are brought closer to each other.
- the operator operates the positioning mechanism of the lower sample stage 46 so that the upper wafer 61 and the lower wafer 62 are bonded as designed so that the lower wafer 62 held on the lower sample stage 46 is bonded.
- Move position The operator operates the pressure contact mechanism 18 of the upper sample stage 17 to lower the upper sample stage 17 in the vertically downward direction so as to press the upper wafer 61 against the lower wafer 62.
- the upper wafer 61 and the lower wafer 62 are bonded by the pressure contact, and one bonded substrate is generated.
- the operator dechucks the bonded substrate from the upper sample stage 17, and then raises the upper sample stage 17 in the vertical upward direction.
- the operator opens the gate valve 5 and uses the transfer device 8 to transfer the lower cartridge 12 on which the bonded substrate is placed from the lower sample table 46 to the lower cartridge table 7.
- the operator closes the gate valve 5 to generate an atmospheric pressure atmosphere inside the load lock chamber 3.
- the operator opens the lid of the load lock chamber 3 and takes out the bonded substrate from the lower cartridge 12 arranged on the lower cartridge base 7.
- the upper sample stage 17 is projected so that the center of the upper sample stage 17 protrudes toward the lower sample stage 46 during such pressure contact.
- the base 17 is elastically deformed.
- the upper wafer 61 and the lower wafer 62 are applied with a load larger than the load applied to the peripheral portion in the center, and a uniform load is applied to the bonding surface between the upper wafer 61 and the lower wafer 62.
- the wafer bonding apparatus 1 can apply a uniform load to the bonding surface between the upper wafer 61 and the lower wafer 62 when the upper wafer 61 and the lower wafer 62 are pressed against each other.
- the wafer bonding apparatus 1 can improve the yield of devices produced by the bonding, improve the reliability of room temperature bonding by the wafer bonding apparatus 1, and make the wafer bonding apparatus 1 more practical.
- the load transmission unit 16 can be replaced with another load transmission unit that applies the load applied from the upper stage 14 to the peripheral portion of the upper sample stage 17.
- FIG. 5 shows an example of the load transmitting portion to be replaced.
- the load transmitting portion 65 is formed in a substantially disk shape in the same manner as the load transmitting portion 16.
- the load transmitting portion 65 has a recess formed in the center of the upper surface, and a support surface 66 formed on the upper surface.
- the support surface 66 is a curved surface and is formed along a part of a so-called donut-shaped surface formed by rotating an ellipse around a rotation axis.
- the rotation axis passes through the center of the disk forming the load transmitting portion 65 and is perpendicular to the disk.
- the load transmitting portion 65 has a bolt hole 67 formed at the center of the disk.
- the load transmitting portion 65 is configured so that a bolt (not shown) is inserted into the bolt hole 67 and the bolt is fastened to the support portion 55 of the ball flange 52 so that the support surface 66 comes into line contact with the support surface 56. And it is supported by the spherical flange 52 so that the cavity 57 is formed in the center of the surface attached to the support portion 55 of the spherical flange 52 of the load transmitting portion 65.
- the load transmission unit 16 When the load applied from the upper stage 14 is small, the load transmission unit 16 receives the load on the entire support surface 66.
- the support portion 55 of the spherical flange 52 When the load applied from the upper stage 14 is large, the support portion 55 of the spherical flange 52 is elastically deformed, and the load transmitting portion 16 receives the load at the center side edge of the support surface 58. For this reason, the position where the load transmitting unit 16 receives the load applied from the upper stage 14 may move greatly depending on the magnitude of the load applied from the upper stage 14. For this reason, the wafer bonding apparatus 1 may not be able to apply a uniform load to the bonding surface between the upper wafer 61 and the lower wafer 62 when the load is large.
- the load transmission unit 65 reduces the movement of the position that receives the load applied from the upper stage 14. As a result, other wafer bonding apparatuses to which the load transmitting unit 65 is applied have a uniform bonding surface between the upper wafer 61 and the lower wafer 62 even when the magnitude of the load applied from the upper stage 14 changes. Load can be applied.
- FIG. 6 shows still another example of the load transmitting portion to be replaced.
- the plurality of columns 72-1 to 72-n are respectively arranged at a plurality of positions obtained by dividing the periphery of the upper sample stage 17 into n equal parts.
- the wafer bonding apparatus to which such a load transmitting unit 71 is applied is similar to the wafer bonding apparatus 1 in the above-described embodiment, and when the upper wafer 61 and the lower wafer 62 are pressed together, the upper wafer 61 A uniform load can be applied to the bonding surface between the lower wafer 62 and the lower wafer 62, and the bonding reliability can be improved.
- FIG. 7 shows still another example of the load transmitting portion to be replaced.
- the load transmitting portion 92 is formed of a plurality of springs 93-1 to 93-n.
- the plurality of springs 93-1 to 93-n are respectively arranged at a plurality of positions obtained by dividing the periphery of the upper sample stage 17 into n equal parts.
- One end of each of the plurality of springs 93-1 to 93-n is fixed to a support member 91 fixed to the support portion 55 of the spherical flange 52, and the other end is fixed to the peripheral portion of the upper sample stage 17.
- a support member 91 fixed to the support portion 55 of the spherical flange 52
- the wafer bonding apparatus to which such a load transmission unit 92 is applied is similar to the wafer bonding apparatus 1 in the above-described embodiment, when the upper wafer 61 and the lower wafer 62 are pressed against each other. A uniform load can be applied to the bonding surface between the lower wafer 62 and the lower wafer 62, and the bonding reliability can be improved.
- the wafer bonding apparatus to which such a load transmission unit 92 is applied further includes an upper side when the upper wafer 61 and the lower wafer 62 are pressed against each other when the upper wafer 61 and the lower wafer 62 are not parallel.
- the plurality of springs 93-1 to 93-n are elastically deformed so that the wafer 61 and the lower wafer 62 are parallel to each other.
- such a wafer bonding apparatus applies a uniform load to the bonding surface between the upper wafer 61 and the lower wafer 62 even when the upper wafer 61 and the lower wafer 62 are not parallel to each other. 61 and the lower wafer 62 can be pressed against each other. As a result, such a wafer bonding apparatus needs to be adjusted using the angle adjustment mechanism 15 so that the holding surface of the upper sample stage 17 and the holding surface of the lower sample stage 46 are parallel to each other before press contact. Therefore, the upper wafer 61 and the lower wafer 62 can be more easily brought into pressure contact with each other. Such a wafer bonding apparatus can further omit the angle adjusting mechanism 15 and can be manufactured at a lower cost.
- the angle adjustment mechanism 15 can be replaced with another angle adjustment mechanism that fixes the direction of the upper sample stage 17 in a predetermined direction.
- FIG. 8 shows an example of the angle adjustment mechanism to be replaced.
- the angle adjustment mechanism 81 includes a first frame 82, an intermediate body 83, a second frame 84, and a support portion 85.
- the first frame 82 is fixed to the upper stage 14.
- the intermediate body 83 is supported by the first frame 82 by a bolt 86 so as to be rotatable around a rotation shaft 88.
- the rotation shaft 88 is parallel to the horizontal direction and is fixed to the first frame 82.
- the bolt 86 is fastened to the intermediate body 83 to fix the intermediate body 83 to the first frame 82.
- the second frame 84 is supported by the intermediate body 83 by a bolt 87 so as to be rotatable about a rotation shaft 89.
- the rotation shaft 89 is substantially parallel to the horizontal direction, is perpendicular to the rotation shaft 89, and is fixed to the intermediate body 83.
- the bolt 86 is fastened to the intermediate body 83 to fix the second frame 84 to the intermediate body 83.
- the support portion 85 is generally formed in a disc shape, and the center of the disc is fixed to the second frame 84.
- the support portion 85 further has a flat support surface formed on the back surface of the surface joined to the second frame 84.
- the angle adjustment mechanism 81 is arranged so that the support surface of the support portion 85 is in close contact with the support surface 58 of the load transmission portion 16 and is attached to the load transmission portion 16.
- the load transmission unit 16 is supported so that the cavity 57 is formed.
- the wafer bonding apparatus to which such an angle adjusting mechanism 81 is applied is similar to the wafer bonding apparatus 1 in the above-described embodiment, when the upper wafer 61 and the lower wafer 62 are pressed against each other. A uniform load can be applied to the bonding surface between the lower wafer 62 and the lower wafer 62, and the bonding reliability can be improved.
- a load larger than the load applied to the peripheral portion of the first substrate is applied to the center of the first substrate. And a load can be uniformly applied to the first substrate and the second substrate.
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Abstract
Description
Claims (6)
- 第1基板を保持する第1試料台と、
前記第1基板に対向する第2基板を保持する第2試料台と、
前記第1試料台の周縁部に接合され、前記第1試料台を第1ステージに支持する荷重伝達部と、
前記第1ステージに対して前記第2試料台を駆動することにより、前記第1基板と前記第2基板とを圧接する駆動装置
とを具備するウェハ接合装置。 - 請求の範囲1において、
前記第1試料台の向きを変更可能に、前記荷重伝達部を介して前記第1試料台を第1ステージに支持する角度調整機構
をさらに具備するウェハ接合装置。 - 請求の範囲2において、
前記角度調整機構は、
前記第1試料台に固定される球フランジと、
前記第1ステージに固定される球座と、
前記球フランジをかしめることにより前記球フランジを前記球座に固定する固定フランジとを備える
ウェハ接合装置。 - 請求の範囲3において、
前記荷重伝達部は、前記角度調整機構と前記荷重伝達部とが線接触して、前記角度調整機構に支持される
ウェハ接合装置。 - 請求の範囲3において、
前記荷重伝達部は、複数の柱から形成され、
前記複数の柱は、それぞれ、一端が前記第1試料台の周縁部に接合され、他端が前記角度調整機構に接合される
ウェハ接合装置。 - 請求の範囲1において、
前記荷重伝達部は、複数の柱から形成され、
前記第1基板と前記第2基板とは、圧接されるときに、前記第1基板と前記第2基板とが密着するように、前記複数の柱がそれぞれ弾性変形する
ウェハ接合装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200880127924.0A CN101965241B (zh) | 2008-11-21 | 2008-11-21 | 晶片接合装置 |
US12/921,653 US8578993B2 (en) | 2008-11-21 | 2008-11-21 | Wafer bonding apparatus |
CA2735202A CA2735202C (en) | 2008-11-21 | 2008-11-21 | Wafer bonding apparatus |
EP08878278.4A EP2357056B1 (en) | 2008-11-21 | 2008-11-21 | Wafer bonding apparatus |
PCT/JP2008/071232 WO2010058481A1 (ja) | 2008-11-21 | 2008-11-21 | ウェハ接合装置 |
JP2009502368A JP4796182B2 (ja) | 2008-11-21 | 2008-11-21 | ウェハ接合装置 |
KR1020107020123A KR101118322B1 (ko) | 2008-11-21 | 2008-11-21 | 웨이퍼 접합 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/071232 WO2010058481A1 (ja) | 2008-11-21 | 2008-11-21 | ウェハ接合装置 |
Publications (1)
Publication Number | Publication Date |
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WO2010058481A1 true WO2010058481A1 (ja) | 2010-05-27 |
Family
ID=42197928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2008/071232 WO2010058481A1 (ja) | 2008-11-21 | 2008-11-21 | ウェハ接合装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8578993B2 (ja) |
EP (1) | EP2357056B1 (ja) |
JP (1) | JP4796182B2 (ja) |
KR (1) | KR101118322B1 (ja) |
CN (1) | CN101965241B (ja) |
CA (1) | CA2735202C (ja) |
WO (1) | WO2010058481A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130240113A1 (en) * | 2010-10-15 | 2013-09-19 | Ev Group Gmbh | Device and method for processing wafers |
JP2014220389A (ja) * | 2013-05-08 | 2014-11-20 | 東京応化工業株式会社 | 貼付装置及び貼付方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9859141B2 (en) | 2010-04-15 | 2018-01-02 | Suss Microtec Lithography Gmbh | Apparatus and method for aligning and centering wafers |
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JP4796182B2 (ja) | 2011-10-19 |
KR20100119566A (ko) | 2010-11-09 |
CA2735202A1 (en) | 2010-05-27 |
CN101965241A (zh) | 2011-02-02 |
CA2735202C (en) | 2014-07-29 |
EP2357056A1 (en) | 2011-08-17 |
JPWO2010058481A1 (ja) | 2012-04-12 |
KR101118322B1 (ko) | 2012-03-09 |
EP2357056A4 (en) | 2012-04-04 |
US20110209832A1 (en) | 2011-09-01 |
US8578993B2 (en) | 2013-11-12 |
CN101965241B (zh) | 2015-04-22 |
EP2357056B1 (en) | 2019-04-10 |
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