WO2010050694A3 - 발광 다이오드 - Google Patents

발광 다이오드 Download PDF

Info

Publication number
WO2010050694A3
WO2010050694A3 PCT/KR2009/006120 KR2009006120W WO2010050694A3 WO 2010050694 A3 WO2010050694 A3 WO 2010050694A3 KR 2009006120 W KR2009006120 W KR 2009006120W WO 2010050694 A3 WO2010050694 A3 WO 2010050694A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting units
wave light
full
terminal
Prior art date
Application number
PCT/KR2009/006120
Other languages
English (en)
French (fr)
Other versions
WO2010050694A2 (ko
Inventor
이정훈
김대원
갈대성
서원철
예경희
윤여진
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42116624&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2010050694(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020090094314A external-priority patent/KR101609866B1/ko
Priority claimed from KR1020090098721A external-priority patent/KR101603773B1/ko
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Publication of WO2010050694A2 publication Critical patent/WO2010050694A2/ko
Publication of WO2010050694A3 publication Critical patent/WO2010050694A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/42—Antiparallel configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

복수개의 발광셀들을 갖는 발광 다이오드가 개시된다. 이 발광 다이오드는, 각각 적어도 하나의 발광셀을 가지며 양단에 제1 단자와 제 2 단자를 갖는 반파 발광 유닛들 및 각각 적어도 하나의 발광셀을 가지며 양단에 제 3 단자와 제4 단자를 갖는 전파 발광 유닛들을 포함한다. 한편, 전파 발광 유닛들의 각 제3 단자는 두개의 반파 발광 유닛들의 제2 단자들에 전기적으로 공통 연결되고, 전파 발광 유닛들의 각 제4 단자는 또 다른 두개의 반파 발광 유닛들의 제1 단자들에 전기적으로 공통 연결된다. 또한, 이웃하는 두개의 전파 발광 유닛들 중, 하나의 전파 발광 유닛의 제3 단자와 다른 하나의 전파 발광 유닛의 제4 단자 사이에 하나의 반파 발광 유닛이 직렬 연결되고, 하나의 전파 발광 유닛의 제4 단자와 상기 다른 하나의 전파 발광 유닛의 제3 단자 사이에 또 다른 반파 발광 유닛이 직렬 연결된다. 이에 따라, 발광셀의 사용효율을 높일 수 있으며, 역방향 전압에 안정한 발광 다이오드를 제공할 수 있다.
PCT/KR2009/006120 2008-10-29 2009-10-22 발광 다이오드 WO2010050694A2 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR20080106510 2008-10-29
KR10-2008-0106510 2008-10-29
KR10-2009-0001045 2009-01-07
KR20090001045 2009-01-07
KR10-2009-0094314 2009-10-05
KR1020090094314A KR101609866B1 (ko) 2008-10-29 2009-10-05 발광 다이오드
KR10-2009-0098721 2009-10-16
KR1020090098721A KR101603773B1 (ko) 2009-01-07 2009-10-16 복수개의 발광셀들을 갖는 발광 다이오드

Publications (2)

Publication Number Publication Date
WO2010050694A2 WO2010050694A2 (ko) 2010-05-06
WO2010050694A3 true WO2010050694A3 (ko) 2010-07-15

Family

ID=42116624

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006120 WO2010050694A2 (ko) 2008-10-29 2009-10-22 발광 다이오드

Country Status (2)

Country Link
US (2) US8232565B2 (ko)
WO (1) WO2010050694A2 (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101590074B1 (ko) * 2008-06-09 2016-01-29 니텍 인코포레이티드 Ａｃ 전압 동작의 자외선 발광 다이오드
WO2010050694A2 (ko) * 2008-10-29 2010-05-06 서울옵토디바이스주식회사 발광 다이오드
US8354680B2 (en) * 2009-09-15 2013-01-15 Seoul Opto Device Co., Ltd. AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell
US9236532B2 (en) * 2009-12-14 2016-01-12 Seoul Viosys Co., Ltd. Light emitting diode having electrode pads
TWI499347B (zh) * 2009-12-31 2015-09-01 Epistar Corp 發光元件
JP5211265B2 (ja) * 2010-06-23 2013-06-12 東京エレクトロン株式会社 封止膜形成方法、封止膜形成装置
TWI466284B (zh) * 2010-07-02 2014-12-21 Epistar Corp 光電元件
US9171883B2 (en) * 2010-08-30 2015-10-27 Epistar Corporation Light emitting device
JP5652234B2 (ja) * 2011-02-07 2015-01-14 日亜化学工業株式会社 半導体発光素子
KR20120139038A (ko) * 2011-06-16 2012-12-27 삼성디스플레이 주식회사 광원 모듈, 상기 광원 모듈의 구동 방법 및 이를 포함하는 표시 장치
KR101902392B1 (ko) * 2011-10-26 2018-10-01 엘지이노텍 주식회사 발광 소자
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
TWI464643B (zh) * 2012-05-25 2014-12-11 J Touch Corp 偏光片之觸控感應元件製作方法與偏光裝置
US9171826B2 (en) 2012-09-04 2015-10-27 Micron Technology, Inc. High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
WO2014081243A1 (en) * 2012-11-23 2014-05-30 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
US9295854B2 (en) * 2012-11-28 2016-03-29 Point Source, Inc. Light and bioelectric therapy pad
US9093627B2 (en) * 2012-12-21 2015-07-28 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
US9356212B2 (en) 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子
US8835949B2 (en) * 2013-02-21 2014-09-16 Sharp Laboratories Of America, Inc. Three-terminal light emitting device (LED) with built-in electrostatic discharge (ESD) protection device
DE102013104132A1 (de) * 2013-04-24 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Halbleiterbauteil
FR3006104B1 (fr) * 2013-05-24 2016-10-07 Commissariat A L Energie Atomique Et Aux Energies Alternatives Dispositif a matrice de diodes a stabilite amelioree
US9491821B2 (en) 2014-02-17 2016-11-08 Peter W. Shackle AC-powered LED light engine
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
US10453825B2 (en) 2014-11-11 2019-10-22 Cree, Inc. Light emitting diode (LED) components and methods
CN107210316B (zh) * 2015-02-10 2020-11-20 亮锐控股有限公司 具有集成机电开关的led芯片及其制造方法
JP2017050445A (ja) * 2015-09-03 2017-03-09 パナソニックＩｐマネジメント株式会社 発光装置、及び照明装置
JP6360514B2 (ja) * 2016-03-31 2018-07-18 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 Ｌｅｄ基板及びそれを有する光照射装置
US10957736B2 (en) * 2018-03-12 2021-03-23 Cree, Inc. Light emitting diode (LED) components and methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2006073815A (ja) * 2004-09-02 2006-03-16 Rohm Co Ltd 半導体発光装置
KR100690323B1 (ko) * 2006-03-08 2007-03-12 서울옵토디바이스주식회사 배선들을 갖는 교류용 발광 다이오드 및 그것을 제조하는방법
KR20070064208A (ko) * 2005-12-16 2007-06-20 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2149907A3 (en) 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
EP2144286A3 (en) * 2004-06-30 2011-03-30 Seoul Opto Device Co., Ltd. Light emitting element with a plurality of light emitting diodes bonded, method of manufacturing the same, and light emitting device using the same
DE112006002927B4 (de) * 2006-01-09 2010-06-02 Seoul Opto Device Co. Ltd., Ansan Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen
KR100765240B1 (ko) * 2006-09-30 2007-10-09 서울옵토디바이스주식회사 서로 다른 크기의 발광셀을 가지는 발광 다이오드 패키지및 이를 채용한 발광 소자
US7714348B2 (en) * 2006-10-06 2010-05-11 Ac-Led Lighting, L.L.C. AC/DC light emitting diodes with integrated protection mechanism
US7649322B2 (en) * 2006-11-08 2010-01-19 Seasonal Specialties Llc Limited flicker light emitting diode string
KR101239853B1 (ko) * 2007-03-13 2013-03-06 서울옵토디바이스주식회사 교류용 발광 다이오드
WO2010050694A2 (ko) * 2008-10-29 2010-05-06 서울옵토디바이스주식회사 발광 다이오드

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2006073815A (ja) * 2004-09-02 2006-03-16 Rohm Co Ltd 半導体発光装置
KR20070064208A (ko) * 2005-12-16 2007-06-20 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
KR100690323B1 (ko) * 2006-03-08 2007-03-12 서울옵토디바이스주식회사 배선들을 갖는 교류용 발광 다이오드 및 그것을 제조하는방법

Also Published As

Publication number Publication date
US8188489B2 (en) 2012-05-29
US20100102337A1 (en) 2010-04-29
WO2010050694A2 (ko) 2010-05-06
US20100102336A1 (en) 2010-04-29
US8232565B2 (en) 2012-07-31

Similar Documents

Publication Publication Date Title
WO2010050694A3 (ko) 발광 다이오드
EP1962331A3 (en) Thin-film solar cell and method of manufacturing the same
MY188090A (en) Main-gate-free and high-efficiency back-contact solar cell module, main-gate-free and high-efficiency back-contact solar cell assembly, and preparation process thereof
EA200900792A1 (ru) Батарейный источник питания
CN106489211A8 (zh) 叠盖式太阳能电池模块
EP2525415A3 (en) Solar cell module
WO2010114318A3 (ko) 모듈의 구조 설계에 유연성을 가진 전지모듈 및 이를 포함하는 중대형 전지팩
WO2009134939A3 (en) Photovoltaic modules manufactured using monolithic module assembly techniques
WO2009117233A3 (en) Interconnect assembly
WO2012033313A3 (ko) 고출력 대용량의 전지팩
WO2010031856A3 (de) Verbindungsplatine
TW200638624A (en) Terminal-linking member of secondary battery module
WO2009111744A3 (en) Electrochemical cells with tabs
WO2011099703A3 (ko) 용접 신뢰성이 향상된 전지모듈 및 이를 포함하는 중대형 전지팩
ATE474329T1 (de) Bypass-diode für photovoltaische zellen
WO2010037798A3 (de) Energiespeichermodul
WO2010081746A3 (en) Power control of serially connected cells
ATE533195T1 (de) Sicherheits-kit für eine sekundärbatterie
WO2012168426A3 (fr) Dispositif de generation d'energie photovoltaïque avec briques de cellules
WO2011115361A3 (ko) 복수개의 발광셀들을 갖는 발광 장치
WO2008102809A1 (ja) 透光性太陽電池モジュールとその製造方法及び太陽電池パネル
EP2506310A3 (en) Bifacial solar cell
MY169379A (en) Solar cell and solar cell module
RU2011138163A (ru) Модуль солнечной батареи
EP2587546A3 (en) Solar cell and solar cell module

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09823774

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09823774

Country of ref document: EP

Kind code of ref document: A2