WO2011115361A3 - 복수개의 발광셀들을 갖는 발광 장치 - Google Patents
복수개의 발광셀들을 갖는 발광 장치 Download PDFInfo
- Publication number
- WO2011115361A3 WO2011115361A3 PCT/KR2011/000213 KR2011000213W WO2011115361A3 WO 2011115361 A3 WO2011115361 A3 WO 2011115361A3 KR 2011000213 W KR2011000213 W KR 2011000213W WO 2011115361 A3 WO2011115361 A3 WO 2011115361A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting units
- wave light
- electrically connected
- emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
본 발명에 따른 발광 장치는, 각 쌍이 동일 극성의 단자들이 서로 전기적으로 연결된 반파 발광 유닛들을 포함하고, 한 쌍의 서로 전기적으로 연결된 동일 극성의 단자들은 그것에 인접한 다른 한 쌍의 서로 전기적으로 연결된 동일 극성의 단자들과 반대 극성인, 적어도 3쌍의 반파 발광 유닛들; 및 인접한 두 쌍의 반파 발광 유닛들에 전기적으로 연결되는 전파 발광 유닛들을 포함하고, 상기 반파 발광 유닛들과 상기 전파 발광 유닛들은 각각 적어도 하나의 발광셀을 가지며, 상기 전파 발광 유닛들의 각 단자들은 상기 반파 발광 유닛들의 상기 서로 전기적으로 연결된 동일 극성의 단자들에 각각 전기적으로 연결되는 것을 특징으로 한다.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0022819 | 2010-03-15 | ||
KR1020100022819A KR20110103649A (ko) | 2010-03-15 | 2010-03-15 | 발광 장치 |
KR10-2010-0040651 | 2010-04-30 | ||
KR1020100040651A KR101649267B1 (ko) | 2010-04-30 | 2010-04-30 | 복수개의 발광셀들을 갖는 발광 다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011115361A2 WO2011115361A2 (ko) | 2011-09-22 |
WO2011115361A3 true WO2011115361A3 (ko) | 2011-11-10 |
Family
ID=44559819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/000213 WO2011115361A2 (ko) | 2010-03-15 | 2011-01-12 | 복수개의 발광셀들을 갖는 발광 장치 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9252326B2 (ko) |
TW (2) | TWI539862B (ko) |
WO (1) | WO2011115361A2 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324691B2 (en) * | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
TWI533474B (zh) * | 2009-10-20 | 2016-05-11 | 晶元光電股份有限公司 | 光電元件 |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN102903813B (zh) * | 2012-09-29 | 2014-04-02 | 海迪科(南通)光电科技有限公司 | 集成图形阵列高压led器件的制备方法 |
US9018660B2 (en) * | 2013-03-25 | 2015-04-28 | Universal Display Corporation | Lighting devices |
US9673254B2 (en) * | 2013-07-22 | 2017-06-06 | Lg Innotek Co., Ltd. | Light emitting device |
TWI597872B (zh) * | 2013-11-25 | 2017-09-01 | 晶元光電股份有限公司 | 發光二極體元件 |
TWI648869B (zh) * | 2014-03-05 | 2019-01-21 | 晶元光電股份有限公司 | 發光裝置 |
US10453825B2 (en) | 2014-11-11 | 2019-10-22 | Cree, Inc. | Light emitting diode (LED) components and methods |
KR20180065700A (ko) | 2016-12-08 | 2018-06-18 | 삼성전자주식회사 | 발광 소자 |
US10957736B2 (en) * | 2018-03-12 | 2021-03-23 | Cree, Inc. | Light emitting diode (LED) components and methods |
US10848074B2 (en) * | 2018-10-12 | 2020-11-24 | Electronics And Telecommunications Research Institute | High voltage bridge rectifier |
KR20210144483A (ko) | 2020-05-22 | 2021-11-30 | 삼성전자주식회사 | 발광 장치 및 운송 수단용 헤드램프 |
Citations (8)
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JP2001307506A (ja) * | 2000-04-17 | 2001-11-02 | Hitachi Ltd | 白色発光装置および照明器具 |
JP2004006582A (ja) * | 2002-04-12 | 2004-01-08 | Shiro Sakai | 発光装置 |
KR20060117210A (ko) * | 2005-05-13 | 2006-11-16 | 인더스트리얼 테크놀로지 리서치 인스티튜트 | 교류 발광 소자 |
KR20070018297A (ko) * | 2005-08-09 | 2007-02-14 | 서울옵토디바이스주식회사 | 발광셀 어레이들을 갖는 발광 다이오드 및 그것을 제조하는방법 |
KR100872248B1 (ko) * | 2007-06-11 | 2008-12-05 | 삼성전기주식회사 | 교류구동 발광장치 |
KR20090049055A (ko) * | 2007-03-13 | 2009-05-15 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
KR20090053435A (ko) * | 2007-11-23 | 2009-05-27 | 삼성전기주식회사 | 모놀리식 발광다이오드 어레이 및 그 제조방법 |
KR20100028461A (ko) * | 2008-09-04 | 2010-03-12 | 포모사 에피택시 인코포레이션 | 교류 발광 장치 |
Family Cites Families (10)
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EP2149906A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
US7213942B2 (en) * | 2002-10-24 | 2007-05-08 | Ac Led Lighting, L.L.C. | Light emitting diodes for high AC voltage operation and general lighting |
US6870196B2 (en) | 2003-03-19 | 2005-03-22 | Eastman Kodak Company | Series/parallel OLED light source |
EP2144286A3 (en) * | 2004-06-30 | 2011-03-30 | Seoul Opto Device Co., Ltd. | Light emitting element with a plurality of light emitting diodes bonded, method of manufacturing the same, and light emitting device using the same |
US7474681B2 (en) * | 2005-05-13 | 2009-01-06 | Industrial Technology Research Institute | Alternating current light-emitting device |
DE102006029957A1 (de) | 2006-06-29 | 2008-01-03 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung |
CN101000739A (zh) | 2007-01-05 | 2007-07-18 | 友达光电股份有限公司 | 控制一驱动电路的单元及装置 |
KR101025972B1 (ko) | 2008-06-30 | 2011-03-30 | 삼성엘이디 주식회사 | 교류 구동 발광 장치 |
TWM354294U (en) | 2008-09-19 | 2009-04-01 | Ind Tech Res Inst | AC lighting devices |
TWM373080U (en) | 2009-08-11 | 2010-01-21 | Orchard Electronics Company Ltd | Safety and energy-saving lighting |
-
2011
- 2011-01-12 WO PCT/KR2011/000213 patent/WO2011115361A2/ko active Application Filing
- 2011-01-19 US US13/009,284 patent/US9252326B2/en not_active Expired - Fee Related
- 2011-02-24 TW TW100106225A patent/TWI539862B/zh not_active IP Right Cessation
- 2011-02-24 TW TW103112168A patent/TWI533749B/zh not_active IP Right Cessation
-
2014
- 2014-03-28 US US14/229,656 patent/US9349912B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001307506A (ja) * | 2000-04-17 | 2001-11-02 | Hitachi Ltd | 白色発光装置および照明器具 |
JP2004006582A (ja) * | 2002-04-12 | 2004-01-08 | Shiro Sakai | 発光装置 |
KR20060117210A (ko) * | 2005-05-13 | 2006-11-16 | 인더스트리얼 테크놀로지 리서치 인스티튜트 | 교류 발광 소자 |
KR20070018297A (ko) * | 2005-08-09 | 2007-02-14 | 서울옵토디바이스주식회사 | 발광셀 어레이들을 갖는 발광 다이오드 및 그것을 제조하는방법 |
KR20090049055A (ko) * | 2007-03-13 | 2009-05-15 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
KR100872248B1 (ko) * | 2007-06-11 | 2008-12-05 | 삼성전기주식회사 | 교류구동 발광장치 |
KR20090053435A (ko) * | 2007-11-23 | 2009-05-27 | 삼성전기주식회사 | 모놀리식 발광다이오드 어레이 및 그 제조방법 |
KR20100028461A (ko) * | 2008-09-04 | 2010-03-12 | 포모사 에피택시 인코포레이션 | 교류 발광 장치 |
Also Published As
Publication number | Publication date |
---|---|
TW201146077A (en) | 2011-12-16 |
US9252326B2 (en) | 2016-02-02 |
TW201429309A (zh) | 2014-07-16 |
US20140209940A1 (en) | 2014-07-31 |
TWI539862B (zh) | 2016-06-21 |
WO2011115361A2 (ko) | 2011-09-22 |
US9349912B2 (en) | 2016-05-24 |
TWI533749B (zh) | 2016-05-11 |
US20110222285A1 (en) | 2011-09-15 |
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