WO2010036730A1 - Efficient led array - Google Patents
Efficient led array Download PDFInfo
- Publication number
- WO2010036730A1 WO2010036730A1 PCT/US2009/058085 US2009058085W WO2010036730A1 WO 2010036730 A1 WO2010036730 A1 WO 2010036730A1 US 2009058085 W US2009058085 W US 2009058085W WO 2010036730 A1 WO2010036730 A1 WO 2010036730A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reflective surface
- led chips
- metal substrate
- led
- lamp
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21L—LIGHTING DEVICES OR SYSTEMS THEREOF, BEING PORTABLE OR SPECIALLY ADAPTED FOR TRANSPORTATION
- F21L4/00—Electric lighting devices with self-contained electric batteries or cells
- F21L4/02—Electric lighting devices with self-contained electric batteries or cells characterised by the provision of two or more light sources
- F21L4/022—Pocket lamps
- F21L4/027—Pocket lamps the light sources being a LED
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S6/00—Lighting devices intended to be free-standing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/08—Lighting devices intended for fixed installation with a standard
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
- F21W2131/103—Outdoor lighting of streets or roads
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Definitions
- the present application relates generally to light emitting diodes, and more particularly, to an efficient LED array.
- a light emitting diode is a semiconductor material impregnated, or doped, with impurities. These impurities add “electrons” and "holes” to the semiconductor, which can move in the material relatively freely.
- a doped region of the semiconductor can have predominantly electrons or holes, and is referred to as an n-type or p-type semiconductor region, respectively.
- the semiconductor includes an n-type semiconductor region and a p-type semiconductor region.
- a reverse electric field is created at the junction between the two regions, which cause the electrons and holes to move away from the junction to form an active region. When a forward voltage sufficient to overcome the reverse electric field is applied across the p-n junction, electrons and holes are forced into the active region and combine. When electrons combine with holes, they fall to lower energy levels and release energy in the form of light.
- a forward voltage is applied across the p-n junction through a pair of electrodes.
- the electrodes are formed on the semiconductor material with a p-electrode formed on the p-type semiconductor region and an n- electrode formed on the n-type semiconductor region.
- Each electrode includes a wire bond pad that allows an external voltage to be applied to the LED.
- a device having multiple LED chips is created by mounting closely spaced LED chips on a ceramic substrate. Unfortunately, the closely spaced LED chips may interfere with each other and result in reduced light output. Also, a ceramic substrate is used because the LED chips have thermal and electrical paths that come in contact with each other.
- an LED chip may have electrical contacts on both top and bottom surfaces so that when the chip is mounted to a substrate, both heat and electricity may pass to the substrate.
- the ceramic substrate provides electrical insulating properties while allowing some heat to pass.
- the ceramic substrate doesn't provide a very efficient thermal path so that heat generated by the closely spaced LED chips may degrade light output.
- the ceramic substrate may be mounted to an aluminum heat spreader, which is turn is mounted to an additional heat sink. This arrangement is costly and results in more complicated manufacture.
- a light emitting diode apparatus comprises a metal substrate having a reflective surface, and a plurality of LED chips mounted directly to the reflective surface of the metal substrate to allow for thermal dissipation, and wherein at least a portion of the LED chips are spaced apart from each other to allow light to reflect from a portion of the reflective surface that is located between the portion of the LED chips.
- a method for forming a light emitting diode apparatus.
- the method comprises configuring a metal substrate to have a reflective surface, and mounting a plurality of LED chips directly to the reflective surface of the metal substrate to allow for thermal dissipation, and wherein at least a portion of the LED chips are spaced apart from each other to allow light to reflect from a portion of the reflective surface that is located between the portion of the LED chips.
- a light emitting diode lamp comprising a package, and a light emitting diode apparatus coupled to the package.
- the light emitting diode apparatus comprises a metal substrate having a reflective surface, and a plurality of LED chips mounted directly to the reflective surface of the metal substrate to allow for thermal dissipation, and wherein at least a portion of the LED chips are spaced apart from each other to allow light to reflect from a portion of the reflective surface that is located between the portion of the LED chips.
- an illumination device is provided that comprises a power source and a light emitting diode lamp in electrical communication with the power source.
- the light emitting diode lamp comprises a package and a light emitting diode apparatus coupled to the package.
- the light emitting diode apparatus comprises a metal substrate having a reflective surface, and a plurality of LED chips mounted directly to the reflective surface of the metal substrate to allow for thermal dissipation, wherein at least a portion of the LED chips are spaced apart from each other to allow light to reflect from a portion of the reflective surface that is located between the portion of the LED chips.
- FIG. 1 shows top and side views of an exemplary LED chip for use in aspects of an efficient LED array
- FIG. 2 shows an exemplary LED array constructed in accordance with aspects of the present invention
- FIG. 3 shows an exemplary efficient LED array apparatus constructed in accordance with aspects of the present invention
- FIG. 4 shows an exemplary method for constructing an efficient LED array apparatus in accordance with aspects of the present invention
- FIG. 5 shows exemplary devices comprising efficient LED arrays constructed in accordance with aspects of the present invention.
- relative terms such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another element as illustrated in the drawings. It will be understood that relative terms are intended to encompass different orientations of an apparatus in addition to the orientation depicted in the drawings. By way of example, if an apparatus in the drawings is turned over, elements described as being on the “lower” side of other elements would then be oriented on the “upper” sides of the other elements. The term “lower”, can therefore, encompass both an orientation of “lower” and “upper,” depending of the particular orientation of the apparatus.
- first and second may be used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second region, layer or section may be termed a first region, layer or section without departing from the teachings of the present invention.
- the LED chip (or die) 100 comprises a body portion 104 and an active region that is located within the area 106.
- the area 106 includes an n-type semiconductor region having predominantly electrons and a p- type semiconductor region having predominately holes.
- a reverse electric field is created at the junction between the n-type and p-type regions, which cause the electrons and holes to move away from the junction to form the active region.
- a forward voltage sufficient to overcome the reverse electric field is applied across the p-n junction, electrons and holes are forced into the active region and combine.
- the LED chip 100 also comprises electrical contacts 108 that are used to apply power. For example, wires that carry an electrical signal to provide power are bonded to the contacts 108. When power is applied through the bonded wires to the contacts 108, the active region operates to emit light of a selected color.
- the LED chip 100 comprises a bottom mounting surface 112 that can be used to mount the LED chip 100 to a substrate. For example, any suitable adhesive may be used to mount the LED chip 100 to the substrate.
- the electrical contacts 108 on the top surface of the LED chip 100 form a horizontal electrical path as illustrated by the arrow 114. Since there are no electrical connections in contact with the mounting surface 112 of the LED chip 100, it can be mounted directly to a metal substrate without the need for an insulating dielectric. By mounting the LED chip 100 directly on a metal substrate, an efficient thermal path is created (as indicated by the arrow 116) to allow heat to pass from the LED chip 100 to the metal substrate. By providing the efficient thermal path 116, the LED chip 100 is able to reduce or minimize any loss in optical power due to the effects of heating.
- FIG. 2 shows an exemplary LED array 200 constructed in accordance with aspects of the present invention.
- the LED array 200 comprises a metal substrate 204 that has a reflective surface 206.
- the metal substrate may be constructed from aluminum and the reflective surface 206 may be bare or polished aluminum.
- the reflective surface 206 may be formed by silver plating on the substrate 204.
- the reflective surface 206 may be formed from any suitable material and formed upon the substrate 204 in any suitable way.
- the reflective surface 206 has a reflectivity index of 70% or greater.
- an array of LED chips is mounted directly onto the reflective surface 206 of the metal substrate 204.
- the array of LED chips may be comprised of the LED chip 100 shown in FIG. 1. Since the LED chip 100 has a mounting surface 112 that is separate from the electrical path 114, the LED chip 100 can be mounted directly onto the reflective surface 206. In doing so, an efficient thermal path is formed allowing heat to pass from the array of LED chips to the metal substrate 204. It should also be noted that while nine LED chips are shown in FIG. 2, there is no limit on the number of LED chips that may be used and in fact, as the number of LED chips increases the optical gain increases. [0030] In various aspects, the LED array 200 is mounted on the substrate 204 with a pre-determined spacing.
- the LED chips are mounted having a vertical spacing as indicated at 208, and a horizontal spacing as indicated at 210.
- the horizontal and vertical spacing between the LED chips is .5 millimeters or greater.
- the spacing exposes regions 212 of the reflective surface 206 between the LED chips. By exposing these regions 212, light emitted from the LED chips may reflect off the exposed portions of the reflective surface 206 to increase the amount of light output from the LED array.
- the LED array may have uniform spacing, non-uniform spacing, or a combination thereof and is not limited to a single fixed spacing.
- FIG. 3 shows an exemplary efficient LED array apparatus 300 constructed in accordance with aspects of the present invention.
- the apparatus 300 comprises the LED array 200 with LED chips (i.e., LED 100) mounted directly to the reflective surface 206 at a pre-determined spacing to expose regions of the reflective surface to allow light to reflect from the reflective surface located between the LED chips as illustrated at 308.
- LED chips i.e., LED 100
- a layer of dielectric insulator 302 which may be aluminum oxide, is mounted to the aluminum metal substrate of the LED array 200.
- copper traces 304 are run to a bonding pad 306. Bonding wires are then routed from the bonding pad 306 in a chip to chip fashion so that power may be applies to all chips in the LED array 200.
- an electrical path is formed as illustrated at 312.
- the LED array 200 is mounted directly to a heat sink 310.
- the heat sink 310 comprises any suitable material and the LED array 200 is mounted directly to the heat sink 310 without any dielectric insulation. This provides for efficient transfer of heat from the metal substrate of the LED array 200 to the heat sink 310.
- FIG. 4 shows an exemplary method 400 for constructing an efficient LED array in accordance with aspects of the present invention. For clarity, the method 400 is described below with reference to the efficient LED array apparatus 300 shown in FIG. 3.
- a metal substrate is configured with a reflective surface.
- the substrate may be aluminum and the reflective surface is polished aluminum or silver plating.
- horizontal and vertical LED spacing is determined to be uniform, non-uniform, or a combination thereof.
- the horizontal and vertical spacing selected is approximately equal to greater than .5 millimeters.
- the LED array is mounted on the reflective surface of the metal substrate at the pre-determined spacing. Since the LED array has separate electrical and thermal paths, the LED chips are mounted directly onto the metal substrate without the use of a dielectric insulator. The spacing of the LED chips exposes regions of the reflective surface between the chips and these regions operate to reflect light thereby increasing the optical output of the LED array.
- electrical connections are made to form an electrical path that is different from the thermal path. For example, wires are bonded across the chips of the LED array as described above to allow power to be applied to the chips.
- the electrical path formed is separate from the thermal path.
- the LED array is mounted directly to a heat sink. Since the substrate of the LED array is metal, it can be mounted directly to the heat sink without the use of a dielectric insulator.
- the method 400 operates to construct an efficient LED array in accordance with aspects of the present invention. It should be noted that the operations of the method 400 may be rearranged or otherwise modified within the scope of the various aspects. Thus, other implementations are possible with the scope of the various aspects described herein.
- FIG. 5 shows exemplary devices 500 comprising efficient LED arrays constructed in accordance with aspects of the present invention.
- the devices 500 comprise a lamp 502, an illumination device 504, and a street light 506.
- Each of the devices shown in FIG. 5 includes an efficient LED array as described herein.
- the lamp 502 comprises a package 516 and an efficient LED array 508 that includes an array of LEDs with pre-determined spacing mounted directly on a metal substrate having a reflective surface.
- the pre-determined spacing operates to increase light output.
- the lamp 502 may be used for any type of general illumination.
- the lamp 502 may be used in an automobile headlamp, street light, overhead light, or in any other general illumination application.
- the illumination device 504 comprises a power source 510 that is electrically coupled to a lamp 512, which may be configured as the lamp 502.
- the power source 510 may be batteries or any other suitable type of power source, such as a solar cell.
- the street light 506 comprises a power source connected to a lamp 514, which may be configured as the lamp 502.
- the lamp 514 comprises a package and an efficient LED array that includes an array of LEDs with pre-determined spacing mounted directly on a metal substrate having a reflective surface.
- the pre-determined spacing operates to increase light output.
- the efficient LED array described herein are suitable for use with virtually any type of LED assembly, which in turn may be used in any type of illumination device and are not limited to the devices shown in FIG. 5.
- the efficient LED array described herein provides for efficient light output and heat dissipation and can be used in a variety of device applications.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09816806.5A EP2342760B1 (en) | 2008-09-29 | 2009-09-23 | Efficient led array |
RU2011117157/28A RU2521219C2 (en) | 2008-09-29 | 2009-09-23 | Efficient led array |
CN2009801416685A CN102187481A (en) | 2008-09-29 | 2009-09-23 | Efficient LED array |
JP2011529189A JP2012504342A (en) | 2008-09-29 | 2009-09-23 | Efficient LED array |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/240,011 US8567988B2 (en) | 2008-09-29 | 2008-09-29 | Efficient LED array |
US12/240,011 | 2008-09-29 |
Publications (1)
Publication Number | Publication Date |
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WO2010036730A1 true WO2010036730A1 (en) | 2010-04-01 |
Family
ID=42057275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2009/058085 WO2010036730A1 (en) | 2008-09-29 | 2009-09-23 | Efficient led array |
Country Status (9)
Country | Link |
---|---|
US (4) | US8567988B2 (en) |
EP (1) | EP2342760B1 (en) |
JP (3) | JP2012504342A (en) |
KR (1) | KR20110056306A (en) |
CN (1) | CN102187481A (en) |
DE (2) | DE202009018965U1 (en) |
MY (1) | MY153305A (en) |
RU (1) | RU2521219C2 (en) |
WO (1) | WO2010036730A1 (en) |
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Also Published As
Publication number | Publication date |
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US20120088321A1 (en) | 2012-04-12 |
US8567988B2 (en) | 2013-10-29 |
US20100297794A1 (en) | 2010-11-25 |
US8371718B2 (en) | 2013-02-12 |
US20100142196A1 (en) | 2010-06-10 |
JP2014195108A (en) | 2014-10-09 |
EP2342760A1 (en) | 2011-07-13 |
JP2016103652A (en) | 2016-06-02 |
EP2342760B1 (en) | 2023-03-15 |
RU2011117157A (en) | 2012-11-10 |
JP2012504342A (en) | 2012-02-16 |
CN102187481A (en) | 2011-09-14 |
DE202009018941U1 (en) | 2014-10-27 |
KR20110056306A (en) | 2011-05-26 |
MY153305A (en) | 2015-01-29 |
US8256929B2 (en) | 2012-09-04 |
US20100079990A1 (en) | 2010-04-01 |
DE202009018965U1 (en) | 2015-02-02 |
RU2521219C2 (en) | 2014-06-27 |
EP2342760A4 (en) | 2015-03-04 |
US8092051B2 (en) | 2012-01-10 |
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