WO2010036002A3 - 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법 - Google Patents

단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법 Download PDF

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Publication number
WO2010036002A3
WO2010036002A3 PCT/KR2009/005384 KR2009005384W WO2010036002A3 WO 2010036002 A3 WO2010036002 A3 WO 2010036002A3 KR 2009005384 W KR2009005384 W KR 2009005384W WO 2010036002 A3 WO2010036002 A3 WO 2010036002A3
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WO
WIPO (PCT)
Prior art keywords
single crystal
crystal substrate
preparing
emitting device
device including
Prior art date
Application number
PCT/KR2009/005384
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English (en)
French (fr)
Other versions
WO2010036002A2 (ko
Inventor
박태영
박성주
Original Assignee
광주과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Publication of WO2010036002A2 publication Critical patent/WO2010036002A2/ko
Publication of WO2010036002A3 publication Critical patent/WO2010036002A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 단결정 기판을 포함하는 발광소자, 및 이의 제조방법이 개시되어 있다. 단결정 기판의 제조방법은 베이스 기판 상에 하부 에피층을 성장시키는 단계, 하부 에피층 내의 전위 영역의 적어도 일부를 선택적으로 제거하는 단계, 제거된 전위 영역 내에 전위 방지 요소를 형성하는 단계 및 전위 방지 요소가 형성된 하부 에피층 상에 상부 에피층을 형성하는 단계를 포함한다.
PCT/KR2009/005384 2008-09-23 2009-09-22 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법 WO2010036002A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080093400A KR101146819B1 (ko) 2008-09-23 2008-09-23 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법
KR10-2008-0093400 2008-09-23

Publications (2)

Publication Number Publication Date
WO2010036002A2 WO2010036002A2 (ko) 2010-04-01
WO2010036002A3 true WO2010036002A3 (ko) 2010-07-08

Family

ID=42060256

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005384 WO2010036002A2 (ko) 2008-09-23 2009-09-22 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법

Country Status (2)

Country Link
KR (1) KR101146819B1 (ko)
WO (1) WO2010036002A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2724362B1 (en) * 2011-06-23 2020-02-12 LG Innotek Co., Ltd. Semiconductor device and method for growing semiconductor crystal
KR101942517B1 (ko) * 2011-12-19 2019-01-29 엘지이노텍 주식회사 에피텍셜 기판 및 그 제조 방법
KR101379290B1 (ko) * 2012-12-28 2014-03-27 주식회사 루미스탈 질화알루미늄 핵생성층을 사용한 질화갈륨 웨이퍼 제조 방법
KR102109048B1 (ko) * 2013-05-14 2020-05-11 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
KR102109062B1 (ko) * 2013-06-05 2020-05-11 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
KR102261957B1 (ko) * 2015-04-13 2021-06-24 엘지이노텍 주식회사 발광소자 및 조명시스템
WO2016197077A1 (en) * 2015-06-05 2016-12-08 Sensor Electronic Technology, Inc. Heterostructure with stress controlling layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326384A (ja) * 2000-05-16 2001-11-22 Shiro Sakai 窒化ガリウム系化合物半導体の製造方法
US20020192959A1 (en) * 2001-06-13 2002-12-19 Ngk Insulators, Ltd. III nitride semiconductor substrate for ELO
JP2003243702A (ja) * 2002-02-15 2003-08-29 Nobuhiko Sawaki 半導体発光素子およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832313B2 (ja) * 2001-11-02 2006-10-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体
JP4559190B2 (ja) 2003-11-06 2010-10-06 昭和電工株式会社 化合物半導体素子
JP4285214B2 (ja) 2003-11-25 2009-06-24 パナソニック電工株式会社 発光ダイオード素子
KR100809229B1 (ko) * 2006-11-20 2008-03-05 삼성전기주식회사 질화물 반도체 발광 소자 및 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326384A (ja) * 2000-05-16 2001-11-22 Shiro Sakai 窒化ガリウム系化合物半導体の製造方法
US20020192959A1 (en) * 2001-06-13 2002-12-19 Ngk Insulators, Ltd. III nitride semiconductor substrate for ELO
JP2003243702A (ja) * 2002-02-15 2003-08-29 Nobuhiko Sawaki 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
WO2010036002A2 (ko) 2010-04-01
KR101146819B1 (ko) 2012-05-21
KR20100034332A (ko) 2010-04-01

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