WO2010032821A1 - Capteur de système micro-électromécanique - Google Patents

Capteur de système micro-électromécanique Download PDF

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Publication number
WO2010032821A1
WO2010032821A1 PCT/JP2009/066355 JP2009066355W WO2010032821A1 WO 2010032821 A1 WO2010032821 A1 WO 2010032821A1 JP 2009066355 W JP2009066355 W JP 2009066355W WO 2010032821 A1 WO2010032821 A1 WO 2010032821A1
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WIPO (PCT)
Prior art keywords
layer
connection metal
metal layer
width dimension
substrate
Prior art date
Application number
PCT/JP2009/066355
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English (en)
Japanese (ja)
Inventor
潔 小林
宜隆 宇都
一好 高橋
潤 鈴木
亨 高橋
Original Assignee
アルプス電気株式会社
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Application filed by アルプス電気株式会社 filed Critical アルプス電気株式会社
Priority to JP2010529807A priority Critical patent/JP5222947B2/ja
Publication of WO2010032821A1 publication Critical patent/WO2010032821A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/092—Buried interconnects in the substrate or in the lid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/082—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for two degrees of freedom of movement of a single mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Definitions

  • the present invention relates to a MEMS sensor formed by micromachining a silicon substrate, and more particularly to a bonding structure such as a support conduction portion (an anchor portion).
  • a movable electrode portion and a fixed electrode portion are formed by microfabrication of an SOI layer constituting an SOI (Silicon on Insulator) substrate.
  • This fine sensor is used as an acceleration sensor, a pressure sensor, a vibrating gyro, a micro relay, or the like by the operation of the movable electrode portion.
  • FIG. 18 is a partial cross-sectional view of a conventional MEMS sensor
  • FIG. 19 is an enlarged cross-sectional view showing a state before bonding of the support conducting part (an anchor part) shown in FIG.
  • the MEMS sensor illustrated in FIG. 18 includes an SOI substrate including a support substrate 200, an oxide insulating layer 203, and an SOI layer 210, and a wiring substrate 211 provided to face the SOI substrate.
  • the movable region 201 including the movable electrode portion and the fixed electrode portion, and the support conductive portions 202 of the movable electrode portion and the fixed electrode portion are formed by micromachining the SOI layer 210.
  • the first connection metal layer 212 is provided on the surface 202 a of the support conducting part 202.
  • the wiring board 211 is configured to include a silicon substrate 204, an insulating layer 205, a lead layer 206, and the like, and a second connection metal layer 213 is formed on the side facing the supporting conductive portion 202.
  • the second connection metal layer 213 is electrically connected to the lead layer 206.
  • the 1st connection metal layer 212 and the 2nd connection metal layer 213 are joined.
  • the width dimension T1 of the oxide insulating layer 203 interposed between the support conduction portion 202 and the support substrate 200 is narrower than the width dimension T2 of the support conduction portion 202.
  • the relationship between the width dimensions T1 and T2 is that, when the oxide insulating layer 203 other than the oxide insulating layer 203 located under the support conductive portion 202 is removed by etching, the oxidation under the outer periphery of the support conductive portion 202 is caused by overetching.
  • the insulating layer 203 is also partially corroded to form the cavity 214.
  • the width dimension T3 of the first connection metal layer 212 formed on the surface 202a of the support conduction portion 202 and the width dimension T4 of the second connection metal layer 213 provided on the wiring substrate 211 side are substantially the same.
  • the width dimensions T3 and T4 are wider than the width dimension T1 of the oxide insulating layer 203.
  • FIGS. 18 and 19 show the width dimensions in the X1-X2 direction
  • the width dimensions in the Y1-Y2 direction orthogonal to this are also in the same relationship as described above.
  • the support conduction portion 202 be formed as small as possible in order to widen the movable region 201 in order to improve detection accuracy. Therefore, the influence of the hollow portion 214 can not be relatively reduced by forming the support conduction portion 202 large.
  • the present invention solves the above-described conventional problems, and in particular, to provide a MEMS sensor capable of obtaining a bonding structure between a bonding layer such as a supporting conductive portion and a wiring substrate, which is more stable than the conventional.
  • the purpose is.
  • the MEMS sensor according to the present invention includes a first substrate on which a support substrate, an intermediate layer, and a functional layer are stacked in this order, a movable electrode portion formed on the functional layer facing the functional layer, and the fixed electrode portion And a wiring substrate having a conduction path with the A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
  • the width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
  • the width dimension of one of the first connection metal layer formed on the surface of the bonding layer and the second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer is the same. It is characterized in that it is narrower than the other width dimension.
  • the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared to the prior art.
  • the connection metal layer on the side where the width dimension is narrowed is within the connection metal layer on the side where the width dimension is wide. Positioning can be performed with high accuracy so that the variation in bonding strength can be reduced.
  • the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
  • the width of the connecting metal layer on the narrow side of the width is equal to or less than the width of the intermediate layer.
  • connection metal layer on the side where the width dimension is narrow is formed in a concavo-convex shape.
  • the connecting metal layer on the narrow side of the width is formed with Ge, and the connecting metal layer on the wide side of the width is formed of Al.
  • each connection metal layer is joined and the metal seal layer is formed.
  • the interfaces of the connecting metal layers can be more closely attached.
  • the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al
  • the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, bonding strength can be increased.
  • the metal seal layer as described above, it is possible to effectively improve the sealing airtightness as well as the bonding strength.
  • the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
  • a wiring substrate provided with a conduction path with the A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
  • the width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
  • the width dimension of at least one of a first connection metal layer formed on the surface of the bonding layer, and a second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer Is equal to or less than the width dimension of the intermediate layer.
  • the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared with the prior art.
  • the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
  • the bonding layer is a support conducting portion connected to each of the movable electrode portion and the fixed electrode portion.
  • the bonding layer is a frame layer formed separately from the movable electrode portion and the fixed electrode portion and surrounding the movable region of the movable electrode portion, and the first connection metal layer and the second connection metal layer are formed.
  • a metal seal layer surrounding the outer periphery of the movable region is formed by the connection metal layer.
  • the first connection metal layer and the second connection metal layer are eutectic-bonded or diffusion-bonded.
  • the first connection metal layer and the second connection metal layer can be strongly joined.
  • the thickness dimension of the bonding layer is thin, and the distance between the supporting substrate and the wiring substrate can be determined with high accuracy. Therefore, it is possible to make a MEMS sensor excellent in dimensional accuracy and strong in bonding strength.
  • the wiring substrate is electrically connected to the silicon substrate, the insulating layer, and the movable electrode portion and the fixed electrode portion embedded in the insulating layer on the surface of the silicon substrate.
  • it is formed to have a lead layer and the second connection metal layer.
  • the wiring substrate can be formed with a simple structure, and the thinning of the MEMS sensor can be realized.
  • the MEMS sensor in the present invention is An upper substrate, an upper connection metal layer formed on the lower surface of the upper substrate, a lower substrate, and a lower connection metal layer formed on the upper surface of the lower substrate;
  • the upper connection metal layer and the lower connection metal layer are joined to form a metal seal layer, Among the upper connection metal layer and the lower connection metal layer, one width dimension is narrower than the other width dimension.
  • connection metal layer on the side with the narrow width is formed in a concavo-convex shape.
  • connection metal layer on the narrow width side is contained in the connection metal layer on the wide width side, and the variation of the bonding strength can be reduced.
  • the interface between the connection metal layers can be more closely adhered by forming the bonding surface of the connection metal layer having the narrower width dimension in a concavo-convex shape.
  • the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al, the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, the bonding strength can be enhanced, and the sealing airtightness can be effectively improved.
  • the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
  • the first connection metal layer provided on the surface of the bonding layer fixedly supported on the support substrate via the intermediate layer, and the second connection metal formed on the surface of the wiring substrate Compared to the prior art, it is easier to apply a uniform load to the joint surface between layers, and it is possible to obtain a stable joint structure, such as being able to suppress breakage of the outer peripheral portion of the joint layer.
  • FIG. 5 A plan view showing a separation pattern of a movable electrode portion, a fixed electrode portion, and a frame layer of the MEMS sensor according to the embodiment of the present invention; An enlarged plan view of the arrow II in FIG. 1; An enlarged plan view of a portion III in FIG. 1; It is sectional drawing which shows the laminated structure of a MEMS sensor, and is equivalent to sectional drawing in the IV-IV line of FIG. A partially enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner; The plan view of FIG. 5 (however, the wiring board is omitted), FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; FIG.
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. A partial longitudinal sectional view showing a preferable configuration of a metal seal layer ((a) shows before bonding, (b) shows after bonding), 13 is a longitudinal sectional view of a metal seal layer showing a comparative example to the configuration of the metal seal layer of FIG.
  • Process drawing showing the manufacturing method of the connection metal layer on the side where the bonding surface is formed by the uneven surface
  • a perspective view of a MEMS sensor with a metal seal layer showing the state before bonding
  • Top view and longitudinal sectional view showing the configuration of another MEMS sensor
  • a partial sectional view of a conventional MEMS sensor, 18 is a partially enlarged cross-sectional view showing a state before bonding, which has been enlarged to explain the bonding structure of the support conducting part of FIG. 18;
  • FIG. 1 shows a MEMS sensor according to an embodiment of the present invention, and is a plan view showing a movable electrode portion, a fixed electrode portion, and a frame layer.
  • the support substrate and the wiring substrate are not shown.
  • FIG. 2 is an enlarged view of part II of FIG. 1
  • FIG. 3 is an enlarged view of part III.
  • FIG. 4 is a cross-sectional view showing the entire structure of the MEMS sensor, which corresponds to a cross-sectional view of FIG. 1 taken along line IV-IV.
  • 5 is a partial enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner
  • FIG. 6 is a plan view of FIG. 5 (however, the wiring board is omitted).
  • 7 to 10 are partially enlarged cross-sectional views of the MEMS sensor of another embodiment which is partially modified from the embodiment of FIG.
  • an SOI layer (functional layer) 10 is sandwiched between the support substrate 1 and the wiring substrate 2.
  • Each portion of the support substrate 1 and the SOI layer 10 is bonded via the oxidation insulating layers (intermediate layers) 3a, 3b and 3c.
  • the supporting substrate 1, the SOI layer 10, and the oxide insulating layers 3a, 3b, and 3c are formed, for example, by microfabrication of an SOI (Silicon on Insulator) substrate (first substrate).
  • SOI Silicon on Insulator
  • the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are formed separately. Further, a part of the oxide insulating layer is removed to form oxide insulating layers 3a, 3b and 3c separated from each other.
  • the planar shape of the SOI layer 10 is rotationally symmetric 180 degrees with respect to the center (center of gravity) O, and vertically with respect to a line extending in the X direction through the center O (Y direction It is symmetrical to).
  • the first fixed electrode portion 11 is provided on the Y1 side of the center O.
  • a rectangular support conduction portion (anchor portion) 12 is integrally formed at a position approaching the center O.
  • the support conducting portion 12 is fixed to the surface 1 a of the support substrate 1 by the oxide insulating layer 3 a.
  • the support conductive portion 12 is fixed to the surface 1a of the support substrate 1 by the oxide insulating layer 3a, and the other portion is the oxide insulating layer between the support substrate 1 It is removed, and the space
  • the first fixed electrode portion 11 has an electrode support portion 11a of a fixed width that linearly extends from the support conduction portion 12 in the Y1 direction.
  • a plurality of counter electrodes 11b are integrally formed on the X1 side of the electrode support 11a, and a plurality of counter electrodes 11c are integrally formed on the X2 side of the electrode support 11a.
  • One counter electrode 11c is shown in FIG.
  • Each of the plurality of counter electrodes 11c linearly extends in the X2 direction, and the width dimension in the Y direction is constant.
  • the plurality of counter electrodes 11c are arranged in a comb shape at regular intervals in the Y direction.
  • the other counter electrode 11b extending to the X1 side and the counter electrode 11c extending in the X2 direction are symmetrical with respect to a line extending in the Y direction through the center O.
  • the second fixed electrode portion 13 is provided on the Y2 side of the center O.
  • the second fixed electrode portion 13 and the first fixed electrode portion 11 are symmetrical in the vertical direction (Y direction) with respect to a line extending in the X direction through the center O. That is, the second fixed electrode portion 13 has a rectangular support conduction portion (anchor portion) 14 provided at a position approaching the center O, and a constant width dimension extending linearly from the support conduction portion 14 in the Y2 direction.
  • the electrode support 13a of A plurality of counter electrodes 13b integrally extending from the electrode support 13a is provided on the X1 side of the electrode support 13a, and a plurality of counter electrodes 13c integrally extending from the electrode support 13a on the X2 side of the electrode support 13a. Is provided.
  • the counter electrodes 13c extend linearly in the X2 direction, have a constant width dimension, and are formed parallel to each other at a constant interval in the Y direction.
  • the opposite electrode 13b on the X1 side linearly extends in the X1 direction with a constant width dimension, and extends in parallel in the Y direction at a constant interval.
  • the support conducting portion 14 is fixed to the surface 1 a of the support substrate 1 via the oxide insulating layer 3 a.
  • the oxide insulating layer between the surface 1a of the support substrate 1 and the electrode support 13a and the counter electrodes 13b and 13c, which are the other parts, are removed, and the electrode support 13a and the counter electrodes 13b and 13c are supported. Between the surface 1 a of the substrate 1 and a gap having a distance corresponding to the thickness of the oxide insulating layer is formed.
  • the inside of the rectangular frame layer 25 is the movable region, and in the movable region, the portion excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is the movable electrode portion It is fifteen.
  • the movable electrode portion 15 is formed separately from the first fixed electrode portion 11, the second fixed electrode portion 13 and the frame layer 25.
  • the movable electrode portion 15 has a first support arm portion 16 extending in the Y1-Y2 direction on the X1 side of the center O, and at a position close to the X1 side of the center O A rectangular support conduction portion (anchor portion) 17 integrally formed with the first support arm portion 16 is provided.
  • the movable electrode portion 15 has a second support arm 18 extending in the Y1-Y2 direction on the X2 side of the center O, and at a position close to the X2 side of the center O, the second support arm A rectangular support conduction portion (anchor portion) 19 integrally formed with 18 is provided.
  • the region between the first support arm 16 and the second support arm 18 and excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is a weight portion 20.
  • the edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 21 and is supported by the second support arm 18 via the elastic support 23.
  • the edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 22 and is supported by the second support arm 18 via the elastic support 24. There is.
  • a plurality of movable counter electrodes 20a extending integrally from the edge on the X1 side of the weight 20 to the X2 side are integrally formed, and on the X1 side from the edge on the X2 side of the weight 20
  • a plurality of extending movable counter electrodes 20b are integrally formed.
  • the movable counter electrode 20 b integrally formed with the weight portion 20 opposes the side on the Y 2 side of the counter electrode 11 c of the first fixed electrode portion 11 through a distance ⁇ 1 at rest.
  • the movable counter electrode 20a on the X1 side is also opposed to the side on the Y2 side of the counter electrode 11b of the first fixed electrode portion 11 via the distance ⁇ 1 at rest.
  • the weight portion 20 is integrally formed with a plurality of movable counter electrodes 20c extending in parallel in the X2 direction from the edge on the X1 side on the Y2 side with respect to the center O, and from the edge on the X2 side in the X1 direction
  • a plurality of movable counter electrodes 20d extending in parallel are integrally formed.
  • the movable counter electrode 20 d is opposed to the side on the Y1 side of the counter electrode 13 c of the second fixed electrode portion 13 through the distance ⁇ 2 at rest. This is the same between the movable counter electrode 20c on the X1 side and the counter electrode 13b.
  • the opposing distances ⁇ 1 and ⁇ 2 at rest are designed to have the same dimensions.
  • the support conduction portion 17 continuous with the first support arm portion 16 and the surface 1 a of the support substrate 1 are fixed via the oxide insulating layer 3 b, and the second support arm portion 18 is fixed.
  • the continuous support conduction portion 19 and the surface 1a of the support substrate 1 are also fixed via the oxide insulating layer 3b.
  • the oxide insulating layer 3b In the movable electrode portion 15, only the support conduction portion 17 and the support conduction portion 19 are fixed to the support substrate 1 by the oxide insulating layer 3b, and other portions, that is, the first support arm portion 16, the second support In the arm portion 18, the weight portion 20, the movable counter electrodes 20a, 20b, 20c, 20d and the elastic support portions 21, 22, 23, 24, the oxide insulating layer between the surface 1a of the support substrate 1 is removed, Between the respective portions and the surface 1 a of the support substrate 1, a gap having a distance corresponding to the thickness dimension of the oxide insulating layer 3 b is formed.
  • the elastic support portions 21, 22, 23, 24 are formed so as to form a meander pattern with thin plate spring portions. The deformation of the elastic support portions 21, 22, 23, 24 allows the weight portion 20 to move in the Y1 direction or the Y2 direction.
  • the frame layer 25 is formed by cutting out the SOI layer 10 in a square frame shape.
  • An oxide insulating layer 3 c is left between the frame layer 25 and the surface 1 a of the support substrate 1.
  • the oxide insulating layer 3 c is provided to surround the entire outer periphery of the movable region of the movable electrode portion 15.
  • the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame are formed on the surface of the SOI layer 10 before processing.
  • a resist layer covering the layer 25 is formed, and the SOI layer in a portion exposed from the resist layer is removed by ion etching means such as deep RIE using high density plasma, and the first fixed electrode portion 11, second The fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are separated from each other.
  • micro holes 11 d formed in the counter electrode 11 c, micro holes 13 d formed in the counter electrode 13 c, and micro holes 20 e formed in the weight portion 20 are illustrated.
  • selective isotropic etching treatment capable of dissolving the oxide insulating layer (SiO 2 layer) without dissolving silicon is performed.
  • the etching solution or the etching gas penetrates into the groove separating the respective portions of the SOI layer 10, and further penetrates into the micropores, whereby the oxide insulating layer is removed.
  • the oxidation insulating layers 3a, 3b and 3c are left only between the support conducting portions 12, 14, 17 and 19 and the frame layer 25 and the surface 1a of the support substrate 1, and the insulating layer is otherwise Is removed.
  • the thickness of the support substrate 1 is about 0.2 to 0.7 mm, the thickness of the SOI layer 10 is about 10 to 30 ⁇ m, and the thickness of the oxide insulating layers 3a, 3b and 3c is about 1 to 3 ⁇ m. is there.
  • the silicon substrate 5 constituting the wiring substrate 2 is formed to have a thickness dimension of about 0.2 to 0.7 mm.
  • Insulating layer 30 is formed on surface 5 a of silicon substrate 5.
  • the insulating layer 30 is an inorganic insulating layer such as SiO 2, SiN, or Al 2 O 3, and is formed by a sputtering process or a CVD process.
  • As the inorganic insulating layer a material is selected in which the difference in thermal expansion coefficient with the silicon substrate is smaller than the difference in thermal expansion coefficients of the conductive metal forming the connection metal layer and the silicon substrate.
  • SiO2 or SiN having a relatively small difference in thermal expansion coefficient with the silicon substrate is used.
  • a second connection metal layer 31 is formed on the surface of the insulating layer 30 so as to face the support conducting portion 12 of the first fixed electrode portion 11.
  • a second connection metal layer 31 (not shown) facing the support conduction portion 14 is formed.
  • the second connection metal layer 32 facing the one support conduction portion 17 of the movable electrode portion 15 is formed on the surface of the insulating layer 30, and similarly, the second connection faces the other support conduction portion 19.
  • a metal layer 32 (not shown) is also formed.
  • a second seal connection metal layer 33 facing the surface of the frame layer 25 is formed on the surface of the insulating layer 30.
  • the second seal connection metal layer 33 is formed of the same conductive metal material as the second connection metal layers 31 and 32.
  • the second seal connection metal layer 33 is formed in a quadrangle facing the frame layer 25 and is formed on the outer periphery of the movable region of the movable electrode portion 15 so as to surround the entire periphery of the movable region .
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are formed of aluminum (Al).
  • a lead layer 34 electrically connected to one of the second connection metal layers 31 and a lead layer 35 electrically connected to the other second connection metal layer 32 are provided inside the insulating layer 30, a lead layer 34 electrically connected to one of the second connection metal layers 31 and a lead layer 35 electrically connected to the other second connection metal layer 32 are provided.
  • the lead layers 34 and 35 are formed of aluminum.
  • the plurality of lead layers 34 and 35 respectively conduct to the respective second connection metal layers 31 and 32.
  • the respective lead layers 34 and 35 pass through the inside of the insulating layer 30 and cross the portion where the second seal connection metal layer 33 is formed without contacting the second seal connection metal layer 33. , And extends outside the area surrounded by the second seal connection metal layer 33.
  • the wiring board 2 is provided with connection pads 36 electrically connected to the respective lead layers 34 and 35 outside the region.
  • the connection pad 36 is formed of aluminum, gold or the like which is a conductive material which is low in resistance and difficult to oxidize.
  • the surface on which the second connection metal layers 31 and 32 are formed and the surface on which the second seal connection metal layer 33 is formed are located on the same plane. Then, a recess 38 is formed in the insulating layer 30 in a region where the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are not formed, toward the surface 5 a of the silicon substrate 5. .
  • the recess 38 is formed in the insulating layer 30 in all parts other than the surface facing the support conducting portions 12, 14, 17, 19 and the frame layer 25. In addition, the recess 38 is formed to a depth halfway to the inside of the insulating layer 30 so that the lead layers 34 and 35 are not exposed.
  • a first connection metal layer 41 facing the second connection metal layer 31 is formed on the surfaces of the support conductive portions 12 and 14 of the SOI layer 10, respectively.
  • a first connection metal layer 42 facing the respective second connection metal layers 32 is formed on the surface 19 by a sputtering process.
  • a first seal connection metal layer 43 facing the second seal connection metal layer 33 is formed on the surface of the frame layer 25 .
  • the first seal connection metal layer 43 is simultaneously formed of the same metal material as the first connection metal layers 41 and 42.
  • the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are eutectic or diffusion bonded to aluminum forming the second connection metal layers 31 and 32 and the second seal connection metal layer 33. It is formed of Ge (germanium) which is a easy metal material.
  • the second connection metal layer 31 and the first connection metal layer 41 are made to face each other, the second connection metal layer 32 and the first connection metal layer 42 are made to face each other, and the second And the first seal connection metal layer 43 face each other. Then, the space between the support substrate 1 and the silicon substrate 5 is pressurized while heating. Thereby, the second connection metal layer 31 and the first connection metal layer 41 are subjected to eutectic bonding or diffusion bonding, and the second connection metal layer 32 and the first connection metal layer 42 are subjected to eutectic bonding or diffusion. Join.
  • the supporting conductive portions 12, 14, 17 and 19 become the oxide insulating layers 3a and 3b and the insulating layer 30.
  • the second seal connection metal layer 33 and the first seal connection metal layer 43 are eutectically bonded or diffusion bonded.
  • the frame layer 25 and the insulating layer 30 are firmly fixed, and the metal seal layer 45 surrounding the entire periphery of the movable region of the movable electrode portion 15 is formed.
  • FIG. 5 is a partially enlarged cross-sectional view showing the vicinity of the support conducting portion 12 in an enlarged manner.
  • FIG. 5 is shown upside down in FIG.
  • the width dimension T10 of the oxide insulating layer 3a interposed between the support conductive portion (bonding layer) 12 and the support substrate 1 is the support conductive portion 12 Narrower than the width dimension T11 of
  • the planar shape of the support conducting portion 12 and the oxide insulating layer 3a is substantially square, it is assumed that the width dimension in the X1-X2 direction and the Y1-Y2 direction orthogonal thereto is substantially the same.
  • the oxide insulating layer 3 a is formed substantially at the center of the bottom of the support conducting portion 12. For this reason, a hollow portion 9 having no oxidation insulating layer between the support substrate 1 and the lower surface of the outer peripheral portion 12 a of the support conducting portion 12 is formed.
  • the reason why the cavity 9 is formed is that, when the unnecessary oxide insulating layer 3a exposed by removing the unnecessary SOI layer 10 is removed by etching in the manufacturing process, the support conductor 12 is formed by over-etching. The oxide insulating layer under the outer peripheral portion 12a of the above is also removed.
  • the width dimension T12 of the first connection metal layer 41 formed on the surface 12b of the support conducting portion 12 is formed with the width dimension T10 or less of the oxide insulating layer 3a. Be done.
  • the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a. Therefore, in plan view as shown in FIG. 6, the entire first connection metal layer 41 can be overlapped in the oxide insulating layer 3a. That is, the first connection metal layer 41 does not protrude in the X1-X2 direction or the Y1-Y2 direction from the oxide insulating layer 3a in a plan view.
  • the width dimension T13 of the second connection metal layer 31 disposed on the wiring board 2 side is larger than the width dimension T10 of the oxide insulating layer 3a.
  • the first connection metal layer 41 and the second connection metal layer 31 are joined by defining the width dimension of each layer, the first connection metal layer 41 and the first connection metal layer 41
  • the load area acting between the second connection metal layers 31 can be restricted by the joint surface of the first connection metal layer 41 having a narrow width dimension.
  • the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a, and the entire first connection metal layer 41 can be It is possible to overlap in the plane of the oxide insulating layer 3a, and it is possible to effectively reduce the load acting on the outer peripheral portion 12a where the cavity 9 is located below the support conduction portion 12.
  • the width dimension T13 of the second connection metal layer 31 is made larger than the width dimension of the first connection metal layer 41.
  • a stable bonding structure can be formed between the support conducting portion 12 and the wiring board 2.
  • width dimension T19 of both the first connection metal layer 41 and the second connection metal layer 31 is made substantially the same, and both width dimensions T19 of the oxide insulating layer 3a are made equal. You may form so that it may become smaller than width dimension T10.
  • a recessed area 31 a is formed substantially at the center of the second connection metal layer 31.
  • the recessed region 31a is formed by forming a recess having a depth to which the surface of the lead layer is exposed in the insulating layer 30, and forming the second connection metal layer 31 by sputtering or the like so as to follow the recess.
  • Width dimension T16 of the 2nd connection metal layer 31 in this form is a straight line width between both ends 31b and 31b. Since the recessed area 31a formed in the second connection metal layer 31 is a non-joined area, in order to suppress a decrease in the bonding area, the second connection metal layer 31 is formed so that the recessed area 31a becomes smaller. Is preferred.
  • concave region 31a of second connection metal layer 31 is shifted so as not to face first connection metal layer 41 as shown by a dotted line in FIG. 9, to form connection region 31c extending long from one end of concave region 31a. It is more preferable that the flat connection region 31c and the flat first connection metal layer 41 be joined together.
  • the width dimension of the second connection metal layer 31 at this time is defined by the width dimension of the flat connection region 31 c.
  • the width dimension T17 of the first connection metal layer 41 is smaller than the width dimension T18 of the second connection metal layer 31, but the width dimension T10 of the oxide insulating layer 3a Slightly wider than.
  • the load area acting between the first connection metal layer 41 and the second connection metal layer 31 is restricted by the bonding surface of the first connection metal layer 41 having a narrow width dimension T17. it can. Therefore, compared with the conventional structure in which the width dimensions of both of the first connection metal layer 41 and the second connection metal layer 31 are equally large, the weight acting on the outer peripheral portion 12a of the support conductive portion 12 is conventionally It can be reduced compared with that.
  • the first connection metal layer 41 whose width dimension T17 is narrowed has a wide width dimension T18.
  • the alignment can be performed with high accuracy so as to be contained in the connection metal layer 31 and the variation in the bonding strength can be reduced.
  • the oxide insulating layer 3 c interposed between the frame layer 25 and the support substrate 1 is also smaller than the width dimension of the frame layer 25. Therefore, the width dimensions of the first seal connection metal layer 43 and the second seal connection metal layer 33 are also the same as the width dimensions of the first connection metal layers 41 and 42 and the second connection metal layers 31 and 32. It is preferable that the metal seal layer 45 that is strong can be formed and the sealability can be improved.
  • the metal seal layer 45 is not formed by bonding the first seal connection metal layer 43 and the second seal connection metal layer 33, only the width dimension of the bonding structure of the support conductive portions 12, 14, 17, 19 Should be regulated. Further, only the width dimension of the joint structure of a part of the supporting and conducting parts may be regulated. Alternatively, the above-described width dimension relationship may be restricted to only the metal seal layer 45 from the viewpoint of enhancing the sealability. However, as shown in FIG. 4, it is most preferable to restrict the above-described width dimension relationship to both the joint structure of all the supporting and conducting parts and the metal seal layer 45.
  • the MEMS sensor described above has a structure in which the SOI substrate and the wiring substrate 2 are stacked, and is thin as a whole.
  • the support conducting portions 12, 14, 17, 19 are joined to the wiring substrate 2 by eutectic bonding or diffusion bonding of the second connection metal layers 31, 32 and the first connection metal layers 41, 42.
  • this bonding layer is thin and small in area, and the support conducting portions 12, 14, 17, 19 and the support substrate 1 are bonded through the oxide insulating layers 3a and 3b of the inorganic insulating material. Therefore, even if the ambient temperature rises, the thermal stress of the bonding layer hardly affects the support structure of the support conducting portions 12, 14, 17 and 19, and the fixed electrode portions 11 and 13 and the movable electrode portion 15 due to the thermal stress. Distortion and the like are unlikely to occur.
  • the metal seal layer 45 surrounding the periphery of the movable region of the movable electrode portion 15 is a bonding layer formed thin between the frame layer 25 and the insulating layer 30, and the frame layer 25 has a sufficient thickness dimension Because of the thermal stress of the metal seal layer 45, distortion and the like are less likely to occur in the support substrate 1 and the silicon substrate 5 made of silicon.
  • the overall thickness of the MEMS sensor is substantially determined by the thickness of the support substrate 1 and the silicon substrate 5, the thickness of the SOI layer 10, and the thickness of the insulating layer 30.
  • the thickness dimensions of the respective layers can be managed with high accuracy, so that variations in thickness are less likely to occur.
  • the recess 38 facing the movable region of the movable electrode portion 15 is formed in the insulating layer 30, the movable electrode portion 15 has a movement margin (margin) in the thickness direction even if the whole is thin. Even if a large acceleration acts in the thickness direction from the outside, the weight 20 and the movable counter electrodes 20a, 20b, 20c, and 20d hardly hit the insulating layer 30, and malfunction does not easily occur.
  • the wiring substrate 2 is configured to have the silicon substrate 5 and the surface 5 a of the silicon substrate 5 including the insulating layer 30, the lead layers 34 and 35, and the second connection metal layer 31. Be done. Therefore, as shown in FIG. 12 which will be described later, the thinning can be realized with a simple structure as compared with the form in which the conduction path to the support conduction portion is secured using the through wiring penetrating to the silicon substrate.
  • the MEMS sensor can be used as an acceleration sensor that detects an acceleration in the Y1 direction or the Y2 direction.
  • the reaction causes the weight 20 of the movable electrode 15 to move in the Y2 direction.
  • an opposing distance ⁇ 1 between the movable counter electrode 20b and the fixed side counter electrode 11c shown in FIG. 2 is increased, and the capacitance between the movable counter electrode 20b and the counter electrode 11c is reduced.
  • the opposing distance ⁇ 2 between the movable counter electrode 20d and the counter electrode 13c shown in FIG. 3 is narrowed, and the capacitance between the movable counter electrode 20b and the counter electrode 13c is increased.
  • the weight portion 20 of the movable electrode portion 15 moves in the thickness direction in response to the acceleration in the direction orthogonal to the XY plane, and the counter electrodes 11b and 11c of the fixed electrode portions 11 and 13 move.
  • 13b, 13c and the movable counter electrodes 20a, 20b, 20c of the movable electrode section 15 are shifted in the thickness direction of the movable electrode section 15, changing the counter area, and the movable counter electrodes at this time It may be one that detects a change in electrostatic capacitance with the counter electrode.
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are aluminum, and the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are Ge.
  • Au (gold) There are (gold) -Ge (germanium), Au (gold) -Sn (tin) and the like.
  • the combination of these metals makes it possible to perform bonding at a relatively low temperature of 450 ° C. or less, which is a temperature below the melting point of each metal.
  • FIG. 11 is a cross-sectional view showing a MEMS sensor according to still another embodiment.
  • an IC package 100 is used instead of the silicon substrate 5.
  • a detection circuit for detecting a change in electrostatic capacitance between the counter electrode and the movable counter electrode is incorporated.
  • An insulating layer 30 is formed on the top surface 101 of the IC package 100, and second connection metal layers 31 and 32 and a second seal connection metal layer 33 are formed on the surface of the insulating layer 30.
  • the second connection metal layers 31 and 32 are electrically connected to the electrode pads and the like appearing on the upper surface 101 of the IC package 100 through the connection layers 134 and 135 such as through holes penetrating the insulating layer 30. It is connected to the electric circuit inside.
  • the width dimension relationship of the bonding structure of the bonding layers is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
  • FIG. 12 is a cross-sectional view showing a MEMS sensor of still another embodiment.
  • a through wiring layer 28 which is also made of silicon and which penetrates the silicon substrate 27 constituting the wiring substrate 26 is provided.
  • An insulating layer 29 insulates between the through wiring layer 28 and the silicon substrate 27.
  • second connection metal layers 31 and 32 are formed on the surface 27 a of the silicon substrate 27 facing the SOI layer 10 in contact with the through wiring layer 28.
  • the insulating layer 29 covers the surface 27b opposite to the surface facing the SOI layer 10 of the silicon substrate 27, and as shown in FIG. 12, the lead layer 37 in contact with the through wiring layer 28 is formed inside the insulating layer 29. It is done.
  • the width dimension relationship of the bonding structure of the bonding layers is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
  • FIG. 13 schematically shows a preferred embodiment of the metal seal layer, in which (a) is a longitudinal sectional view showing a state before joining, and (b) is a longitudinal sectional view showing a state after joining .
  • the MEMS sensor includes, for example, a lower substrate 50 formed of silicon, an upper substrate 52, and a lower connection metal layer 51 formed on the upper surface of the lower substrate 50; And the upper connection metal layer 53 formed on the upper substrate 52.
  • the width dimension T20 of the upper connection metal layer 53 is smaller than the width dimension T21 of the lower connection metal layer 51.
  • the bonding surface 51a of the lower connection metal layer (wide connection metal layer) 51 is a flat surface, but the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) is It is formed in the uneven shape.
  • the convex portion 54 formed on the bonding surface 53a of the upper connection metal layer 53 is formed in a tapered shape.
  • the convex portions 54 may be formed in a dot shape on the bonding surface 53 a in a dotted manner, or may be formed in a convex shape.
  • connection metal layer (narrow connection metal layer) 53 is formed of a metal material having a higher hardness at the time of bonding than the lower connection metal layer (wide connection metal layer) 51.
  • the upper connection metal layer 53 is preferably formed of, for example, a layer having Ge, in particular, a Ge layer.
  • the lower connection metal layer 51 is preferably formed of, for example, a layer containing Al, in particular, an Al layer or an AlCu layer.
  • the temperature is raised to a temperature at which the eutectic reaction starts, and pressure is applied between the lower substrate 50 and the upper substrate 52.
  • FIG. 14 shows a comparative example in which the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) 53 is formed as a flat surface without being an uneven surface, unlike FIG. 13A.
  • the bonding surface 53a is formed with an uneven surface. While the convex portion 54 of the upper connection metal layer 53 bites into the lower connection metal layer 51 without any deformation due to high pressure at the initial stage of bonding, the lower connection metal layer 51 follows the uneven shape of the bonding surface 53a. As a result, formation of the void 55 and the unbonded region 56 shown in FIG. 14 at the bonded interface shown in FIG. 13B can be effectively suppressed. As shown in FIG. 13B, the interface between the lower connection metal layer 53 and the upper connection metal layer 53 is in close contact. Therefore, as compared with the configuration shown in FIG. 14, the bonding strength and the sealing airtightness can be improved.
  • the bonding surface 51a of the lower connection metal layer 51 is almost the same as that of the upper connection metal layer 53 as shown in FIG.
  • the bonding area can be made larger than in the configuration in which the flat surfaces are bonded as shown in FIG. 14, and the bonding pressure per unit area applied to the bonding surfaces of the connecting metal layers 51 and 53. Declines. Therefore, the upper connection metal layer (narrow connection metal layer) 53 can be suppressed from being pushed into the lower connection metal layer (wide connection metal layer) 51 more than necessary, and a stopper function can be exhibited.
  • connection metal layer 53 it is preferable to form the joint surface 53a of the connection metal layer 53 on the side where the width dimension is narrow by an uneven surface. Even if it is reversed, it is effective in improving the bonding strength and sealing air tightness as compared with the case of FIG. 14, but the uneven surface of the narrow connecting metal layer 53 on the bonding surface 51a of the wide connecting metal layer 51. By pressing (bonding surface 53a), the other connection metal layer 51 can be closely attached to the whole of the uneven surface, and the bonding strength can be more effectively improved.
  • FIG. 15 is process drawing (longitudinal sectional view) which shows the manufacturing method of the connection metal layer which has a joining surface of uneven
  • connection metal layer 58 is formed on the substrate 57.
  • the connection metal layer 58 is formed of, for example, a Ge layer.
  • the mask layer 59 is partially formed on the surface 58a of the connection metal layer 58.
  • the mask layer 59 is provided at the position of the convex portion 60 (see FIGS. 15 (c) and 15 (d)) formed on the surface 58a, but is formed with a width wider than the minimum width of the convex portion 60.
  • connection metal layer 58 not covered with the mask layer 59 is scraped.
  • the portion of the connection metal layer 58 located below the mask layer 59 is also scraped into, and a tapered convex portion 60 is formed below the mask layer 59.
  • the minimum width of the convex portion 60 is smaller than the width dimension of the mask layer 59.
  • connection metal layer 58 can be easily and appropriately formed in an uneven shape.
  • a frame-like sealing line 62 is formed on the upper surface 50a of the lower substrate 50 by the lower connecting metal layer 51 made of Al or the like shown in FIG.
  • a frame-like sealing line 61 is formed on the lower surface 52a of the upper substrate 52 by the upper connection metal layer 53 made of Ge or the like shown in FIG.
  • the shape of the vertical cross section of the sealing lines 62, 61 is the same as the shape of the vertical cross section of the connecting metal layers 51, 53 shown in FIG. 13 (a).
  • the inner configuration of the metal seal layer formed by joining the sealing lines 62 and 61 in FIG. 16 is not particularly limited, but can be applied to, for example, the structure shown in FIG.
  • FIG. 17 (a) is a plan view of the MEMS sensor
  • FIG. 17 (b) is a longitudinal sectional view taken along the line AA shown in FIG. 17 (a) and viewed from the arrow direction.
  • the metal seal layer 70 shown in FIG. 17 is formed by joining the sealing lines 62 and 61 shown in FIG. 16, and has an enlarged longitudinal cross section similar to that of FIG. 13 (b). Therefore, the MEMS sensor which is excellent in bonding strength and sealing airtightness can be realized.
  • three sensor areas 71, 72, 73 are juxtaposed with a space X1-X2 inside the metal seal layer 70 formed in a frame shape.
  • the acceleration in the Z direction can be detected by the operation of the movable body 74.
  • the acceleration in the Y direction can be detected by the operation of the movable body 75
  • the acceleration in the X direction can be detected by the operation of the movable body 76.
  • the present invention can also be applied to a form in which there is not a movable body but another sensor configuration inside the metal seal layer formed by joining the sealing lines 62 and 61.
  • connection metal layer shown in FIG. 13 can be applied to any of the configurations shown in FIGS. That is, for example, taking FIG. 5 as an example, the bonding surface 41 a of the first connection metal layer (narrow connection metal layer) 41 formed to have a narrow width T12 is formed as an uneven surface. Further, the first connection metal layer 41 is formed of a material having higher hardness at the time of bonding as compared to the second connection metal layer (wide connection metal layer) 31 in which the width dimension T13 is formed to be wide.
  • the bonding surface of the connection metal layer on the side formed of a material with high hardness at bonding is formed by the uneven surface. Be done.
  • Reference Signs List 1 support substrate 2 wiring substrate 3a, 3b, 3c oxide insulating layer 5, 27 silicon substrate 10 SOI layer 11 first fixed electrode portion 11b, 11c counter electrode 12 supporting conductive portion (anchor portion) 13 second fixed electrode portion 13b, 13c counter electrode 14 supporting conductive portion (anchor portion) 15 Movable electrode portion 16 First support arm portion 17 Support conducting portion (anchor portion) 18 Second Support Arm 19 Support Conductor (Anchor) Reference Signs List 20 weight portion 20a, 20b, 20c, 20d movable counter electrode 21, 22, 23, 24 elastic support portion 25 frame layer 28 through wiring layer 29, 30 insulating layer 31, 32 second connection metal layer 33 second seal Connection metal layer 34, 35 Lead layer 38 Recess 41, 42 First connection metal layer 43 First seal connection metal layer 45, 70 Metal seal layer 50 Lower substrate 51 Lower connection metal layer 51a Bonding surface 52 Upper substrate 53 Upper connection metal layer 53a Bonding surface (concave / convex surface) 54, 60 convex portion 58 connection metal layer 59 mask layer 61, 62 sealing line 71 to

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Abstract

L'invention porte sur un capteur de système micro-électromécanique (MEMS) dans lequel, notamment, une structure de joint plus stable entre une partie de conduction de support et un substrat de câblage que dans l'état antérieur de la technique peut être obtenue. Une partie de conduction de support (couche de joint) (12) est supportée de façon fixe par une couche isolante oxydée (3a). La dimension de largeur (T10) de la couche isolante oxydée (3a) est plus étroite que la dimension de largeur (T11) de la partie de conduction de support (12). Une première couche métallique de connexion (41) est formée sur la surface (12b) de la partie de conduction de support (12). Une seconde couche métallique de connexion (31) est formée sur le côté de substrat de câblage, et les couches métalliques de connexion (31, 41) sont reliées. La dimension de largeur (T12) de la première couche métallique de connexion (41) est inférieure à la dimension de largeur (T13) de la seconde couche métallique de connexion (31) et la dimension de largeur (T10) de la couche isolante oxydée (3a).
PCT/JP2009/066355 2008-09-22 2009-09-18 Capteur de système micro-électromécanique WO2010032821A1 (fr)

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JP2012232405A (ja) * 2011-04-22 2012-11-29 Alps Electric Co Ltd Ｍｅｍｓセンサ及びその製造方法
WO2013163125A1 (fr) * 2012-04-27 2013-10-31 Analog Devices, Inc. Procédé de création d'aspérités dans du métal pour une liaison métal-métal
JP2014500498A (ja) * 2010-12-07 2014-01-09 アトランティック・イナーシャル・システムズ・リミテッド 加速度計
KR101405561B1 (ko) * 2012-07-19 2014-06-10 현대자동차주식회사 멤스 센서 패키징 방법
WO2017047663A1 (fr) * 2015-09-17 2017-03-23 株式会社村田製作所 Dispositif mems et procédé de production de celui-ci
EP3333579A1 (fr) 2016-12-07 2018-06-13 Seiko Epson Corporation Capteur de quantité physique, dispositif de capteur de quantité physique, appareil électronique et véhicule
US10712157B2 (en) 2017-04-05 2020-07-14 Seiko Epson Corporation Physical quantity sensor, electronic device, and vehicle
CN113302833A (zh) * 2019-01-16 2021-08-24 株式会社鹭宫制作所 Mems梁构造以及mems振动发电元件

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WO2007078472A1 (fr) * 2005-12-16 2007-07-12 Innovative Micro Technology Liaison hermétique au niveau plaquette faisant intervenir un alliage métallique et une zone élevée
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JP2014500498A (ja) * 2010-12-07 2014-01-09 アトランティック・イナーシャル・システムズ・リミテッド 加速度計
US10101357B2 (en) 2010-12-07 2018-10-16 Atlantic Inertial Systems Limited Accelerometer
JP2012232405A (ja) * 2011-04-22 2012-11-29 Alps Electric Co Ltd Ｍｅｍｓセンサ及びその製造方法
WO2013163125A1 (fr) * 2012-04-27 2013-10-31 Analog Devices, Inc. Procédé de création d'aspérités dans du métal pour une liaison métal-métal
KR101405561B1 (ko) * 2012-07-19 2014-06-10 현대자동차주식회사 멤스 센서 패키징 방법
CN107848789B (zh) * 2015-09-17 2020-10-27 株式会社村田制作所 Mems设备及其制造方法
WO2017047663A1 (fr) * 2015-09-17 2017-03-23 株式会社村田製作所 Dispositif mems et procédé de production de celui-ci
CN107848789A (zh) * 2015-09-17 2018-03-27 株式会社村田制作所 Mems设备及其制造方法
JPWO2017047663A1 (ja) * 2015-09-17 2018-03-29 株式会社村田製作所 Ｍｅｍｓデバイス、及びその製造方法
US10934161B2 (en) 2015-09-17 2021-03-02 Murata Manufacturing Co., Ltd. MEMS device and method for producing same
EP3333579A1 (fr) 2016-12-07 2018-06-13 Seiko Epson Corporation Capteur de quantité physique, dispositif de capteur de quantité physique, appareil électronique et véhicule
US10830789B2 (en) 2016-12-07 2020-11-10 Seiko Epson Corporation Physical quantity sensor, physical quantity sensor device, electronic apparatus, and vehicle
US10712157B2 (en) 2017-04-05 2020-07-14 Seiko Epson Corporation Physical quantity sensor, electronic device, and vehicle
CN113302833A (zh) * 2019-01-16 2021-08-24 株式会社鹭宫制作所 Mems梁构造以及mems振动发电元件
CN113302833B (zh) * 2019-01-16 2024-02-06 株式会社鹭宫制作所 Mems梁构造以及mems振动发电元件

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