WO2010032821A1 - Mems sensor - Google Patents

Mems sensor Download PDF

Info

Publication number
WO2010032821A1
WO2010032821A1 PCT/JP2009/066355 JP2009066355W WO2010032821A1 WO 2010032821 A1 WO2010032821 A1 WO 2010032821A1 JP 2009066355 W JP2009066355 W JP 2009066355W WO 2010032821 A1 WO2010032821 A1 WO 2010032821A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
connection metal
metal layer
width dimension
substrate
Prior art date
Application number
PCT/JP2009/066355
Other languages
French (fr)
Japanese (ja)
Inventor
潔 小林
宜隆 宇都
一好 高橋
潤 鈴木
亨 高橋
Original Assignee
アルプス電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アルプス電気株式会社 filed Critical アルプス電気株式会社
Priority to JP2010529807A priority Critical patent/JP5222947B2/en
Publication of WO2010032821A1 publication Critical patent/WO2010032821A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/092—Buried interconnects in the substrate or in the lid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/082—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for two degrees of freedom of movement of a single mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Definitions

  • the present invention relates to a MEMS sensor formed by micromachining a silicon substrate, and more particularly to a bonding structure such as a support conduction portion (an anchor portion).
  • a movable electrode portion and a fixed electrode portion are formed by microfabrication of an SOI layer constituting an SOI (Silicon on Insulator) substrate.
  • This fine sensor is used as an acceleration sensor, a pressure sensor, a vibrating gyro, a micro relay, or the like by the operation of the movable electrode portion.
  • FIG. 18 is a partial cross-sectional view of a conventional MEMS sensor
  • FIG. 19 is an enlarged cross-sectional view showing a state before bonding of the support conducting part (an anchor part) shown in FIG.
  • the MEMS sensor illustrated in FIG. 18 includes an SOI substrate including a support substrate 200, an oxide insulating layer 203, and an SOI layer 210, and a wiring substrate 211 provided to face the SOI substrate.
  • the movable region 201 including the movable electrode portion and the fixed electrode portion, and the support conductive portions 202 of the movable electrode portion and the fixed electrode portion are formed by micromachining the SOI layer 210.
  • the first connection metal layer 212 is provided on the surface 202 a of the support conducting part 202.
  • the wiring board 211 is configured to include a silicon substrate 204, an insulating layer 205, a lead layer 206, and the like, and a second connection metal layer 213 is formed on the side facing the supporting conductive portion 202.
  • the second connection metal layer 213 is electrically connected to the lead layer 206.
  • the 1st connection metal layer 212 and the 2nd connection metal layer 213 are joined.
  • the width dimension T1 of the oxide insulating layer 203 interposed between the support conduction portion 202 and the support substrate 200 is narrower than the width dimension T2 of the support conduction portion 202.
  • the relationship between the width dimensions T1 and T2 is that, when the oxide insulating layer 203 other than the oxide insulating layer 203 located under the support conductive portion 202 is removed by etching, the oxidation under the outer periphery of the support conductive portion 202 is caused by overetching.
  • the insulating layer 203 is also partially corroded to form the cavity 214.
  • the width dimension T3 of the first connection metal layer 212 formed on the surface 202a of the support conduction portion 202 and the width dimension T4 of the second connection metal layer 213 provided on the wiring substrate 211 side are substantially the same.
  • the width dimensions T3 and T4 are wider than the width dimension T1 of the oxide insulating layer 203.
  • FIGS. 18 and 19 show the width dimensions in the X1-X2 direction
  • the width dimensions in the Y1-Y2 direction orthogonal to this are also in the same relationship as described above.
  • the support conduction portion 202 be formed as small as possible in order to widen the movable region 201 in order to improve detection accuracy. Therefore, the influence of the hollow portion 214 can not be relatively reduced by forming the support conduction portion 202 large.
  • the present invention solves the above-described conventional problems, and in particular, to provide a MEMS sensor capable of obtaining a bonding structure between a bonding layer such as a supporting conductive portion and a wiring substrate, which is more stable than the conventional.
  • the purpose is.
  • the MEMS sensor according to the present invention includes a first substrate on which a support substrate, an intermediate layer, and a functional layer are stacked in this order, a movable electrode portion formed on the functional layer facing the functional layer, and the fixed electrode portion And a wiring substrate having a conduction path with the A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
  • the width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
  • the width dimension of one of the first connection metal layer formed on the surface of the bonding layer and the second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer is the same. It is characterized in that it is narrower than the other width dimension.
  • the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared to the prior art.
  • the connection metal layer on the side where the width dimension is narrowed is within the connection metal layer on the side where the width dimension is wide. Positioning can be performed with high accuracy so that the variation in bonding strength can be reduced.
  • the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
  • the width of the connecting metal layer on the narrow side of the width is equal to or less than the width of the intermediate layer.
  • connection metal layer on the side where the width dimension is narrow is formed in a concavo-convex shape.
  • the connecting metal layer on the narrow side of the width is formed with Ge, and the connecting metal layer on the wide side of the width is formed of Al.
  • each connection metal layer is joined and the metal seal layer is formed.
  • the interfaces of the connecting metal layers can be more closely attached.
  • the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al
  • the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, bonding strength can be increased.
  • the metal seal layer as described above, it is possible to effectively improve the sealing airtightness as well as the bonding strength.
  • the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
  • a wiring substrate provided with a conduction path with the A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
  • the width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
  • the width dimension of at least one of a first connection metal layer formed on the surface of the bonding layer, and a second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer Is equal to or less than the width dimension of the intermediate layer.
  • the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared with the prior art.
  • the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
  • the bonding layer is a support conducting portion connected to each of the movable electrode portion and the fixed electrode portion.
  • the bonding layer is a frame layer formed separately from the movable electrode portion and the fixed electrode portion and surrounding the movable region of the movable electrode portion, and the first connection metal layer and the second connection metal layer are formed.
  • a metal seal layer surrounding the outer periphery of the movable region is formed by the connection metal layer.
  • the first connection metal layer and the second connection metal layer are eutectic-bonded or diffusion-bonded.
  • the first connection metal layer and the second connection metal layer can be strongly joined.
  • the thickness dimension of the bonding layer is thin, and the distance between the supporting substrate and the wiring substrate can be determined with high accuracy. Therefore, it is possible to make a MEMS sensor excellent in dimensional accuracy and strong in bonding strength.
  • the wiring substrate is electrically connected to the silicon substrate, the insulating layer, and the movable electrode portion and the fixed electrode portion embedded in the insulating layer on the surface of the silicon substrate.
  • it is formed to have a lead layer and the second connection metal layer.
  • the wiring substrate can be formed with a simple structure, and the thinning of the MEMS sensor can be realized.
  • the MEMS sensor in the present invention is An upper substrate, an upper connection metal layer formed on the lower surface of the upper substrate, a lower substrate, and a lower connection metal layer formed on the upper surface of the lower substrate;
  • the upper connection metal layer and the lower connection metal layer are joined to form a metal seal layer, Among the upper connection metal layer and the lower connection metal layer, one width dimension is narrower than the other width dimension.
  • connection metal layer on the side with the narrow width is formed in a concavo-convex shape.
  • connection metal layer on the narrow width side is contained in the connection metal layer on the wide width side, and the variation of the bonding strength can be reduced.
  • the interface between the connection metal layers can be more closely adhered by forming the bonding surface of the connection metal layer having the narrower width dimension in a concavo-convex shape.
  • the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al, the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, the bonding strength can be enhanced, and the sealing airtightness can be effectively improved.
  • the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
  • the first connection metal layer provided on the surface of the bonding layer fixedly supported on the support substrate via the intermediate layer, and the second connection metal formed on the surface of the wiring substrate Compared to the prior art, it is easier to apply a uniform load to the joint surface between layers, and it is possible to obtain a stable joint structure, such as being able to suppress breakage of the outer peripheral portion of the joint layer.
  • FIG. 5 A plan view showing a separation pattern of a movable electrode portion, a fixed electrode portion, and a frame layer of the MEMS sensor according to the embodiment of the present invention; An enlarged plan view of the arrow II in FIG. 1; An enlarged plan view of a portion III in FIG. 1; It is sectional drawing which shows the laminated structure of a MEMS sensor, and is equivalent to sectional drawing in the IV-IV line of FIG. A partially enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner; The plan view of FIG. 5 (however, the wiring board is omitted), FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; FIG.
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5;
  • FIG. A partial longitudinal sectional view showing a preferable configuration of a metal seal layer ((a) shows before bonding, (b) shows after bonding), 13 is a longitudinal sectional view of a metal seal layer showing a comparative example to the configuration of the metal seal layer of FIG.
  • Process drawing showing the manufacturing method of the connection metal layer on the side where the bonding surface is formed by the uneven surface
  • a perspective view of a MEMS sensor with a metal seal layer showing the state before bonding
  • Top view and longitudinal sectional view showing the configuration of another MEMS sensor
  • a partial sectional view of a conventional MEMS sensor, 18 is a partially enlarged cross-sectional view showing a state before bonding, which has been enlarged to explain the bonding structure of the support conducting part of FIG. 18;
  • FIG. 1 shows a MEMS sensor according to an embodiment of the present invention, and is a plan view showing a movable electrode portion, a fixed electrode portion, and a frame layer.
  • the support substrate and the wiring substrate are not shown.
  • FIG. 2 is an enlarged view of part II of FIG. 1
  • FIG. 3 is an enlarged view of part III.
  • FIG. 4 is a cross-sectional view showing the entire structure of the MEMS sensor, which corresponds to a cross-sectional view of FIG. 1 taken along line IV-IV.
  • 5 is a partial enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner
  • FIG. 6 is a plan view of FIG. 5 (however, the wiring board is omitted).
  • 7 to 10 are partially enlarged cross-sectional views of the MEMS sensor of another embodiment which is partially modified from the embodiment of FIG.
  • an SOI layer (functional layer) 10 is sandwiched between the support substrate 1 and the wiring substrate 2.
  • Each portion of the support substrate 1 and the SOI layer 10 is bonded via the oxidation insulating layers (intermediate layers) 3a, 3b and 3c.
  • the supporting substrate 1, the SOI layer 10, and the oxide insulating layers 3a, 3b, and 3c are formed, for example, by microfabrication of an SOI (Silicon on Insulator) substrate (first substrate).
  • SOI Silicon on Insulator
  • the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are formed separately. Further, a part of the oxide insulating layer is removed to form oxide insulating layers 3a, 3b and 3c separated from each other.
  • the planar shape of the SOI layer 10 is rotationally symmetric 180 degrees with respect to the center (center of gravity) O, and vertically with respect to a line extending in the X direction through the center O (Y direction It is symmetrical to).
  • the first fixed electrode portion 11 is provided on the Y1 side of the center O.
  • a rectangular support conduction portion (anchor portion) 12 is integrally formed at a position approaching the center O.
  • the support conducting portion 12 is fixed to the surface 1 a of the support substrate 1 by the oxide insulating layer 3 a.
  • the support conductive portion 12 is fixed to the surface 1a of the support substrate 1 by the oxide insulating layer 3a, and the other portion is the oxide insulating layer between the support substrate 1 It is removed, and the space
  • the first fixed electrode portion 11 has an electrode support portion 11a of a fixed width that linearly extends from the support conduction portion 12 in the Y1 direction.
  • a plurality of counter electrodes 11b are integrally formed on the X1 side of the electrode support 11a, and a plurality of counter electrodes 11c are integrally formed on the X2 side of the electrode support 11a.
  • One counter electrode 11c is shown in FIG.
  • Each of the plurality of counter electrodes 11c linearly extends in the X2 direction, and the width dimension in the Y direction is constant.
  • the plurality of counter electrodes 11c are arranged in a comb shape at regular intervals in the Y direction.
  • the other counter electrode 11b extending to the X1 side and the counter electrode 11c extending in the X2 direction are symmetrical with respect to a line extending in the Y direction through the center O.
  • the second fixed electrode portion 13 is provided on the Y2 side of the center O.
  • the second fixed electrode portion 13 and the first fixed electrode portion 11 are symmetrical in the vertical direction (Y direction) with respect to a line extending in the X direction through the center O. That is, the second fixed electrode portion 13 has a rectangular support conduction portion (anchor portion) 14 provided at a position approaching the center O, and a constant width dimension extending linearly from the support conduction portion 14 in the Y2 direction.
  • the electrode support 13a of A plurality of counter electrodes 13b integrally extending from the electrode support 13a is provided on the X1 side of the electrode support 13a, and a plurality of counter electrodes 13c integrally extending from the electrode support 13a on the X2 side of the electrode support 13a. Is provided.
  • the counter electrodes 13c extend linearly in the X2 direction, have a constant width dimension, and are formed parallel to each other at a constant interval in the Y direction.
  • the opposite electrode 13b on the X1 side linearly extends in the X1 direction with a constant width dimension, and extends in parallel in the Y direction at a constant interval.
  • the support conducting portion 14 is fixed to the surface 1 a of the support substrate 1 via the oxide insulating layer 3 a.
  • the oxide insulating layer between the surface 1a of the support substrate 1 and the electrode support 13a and the counter electrodes 13b and 13c, which are the other parts, are removed, and the electrode support 13a and the counter electrodes 13b and 13c are supported. Between the surface 1 a of the substrate 1 and a gap having a distance corresponding to the thickness of the oxide insulating layer is formed.
  • the inside of the rectangular frame layer 25 is the movable region, and in the movable region, the portion excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is the movable electrode portion It is fifteen.
  • the movable electrode portion 15 is formed separately from the first fixed electrode portion 11, the second fixed electrode portion 13 and the frame layer 25.
  • the movable electrode portion 15 has a first support arm portion 16 extending in the Y1-Y2 direction on the X1 side of the center O, and at a position close to the X1 side of the center O A rectangular support conduction portion (anchor portion) 17 integrally formed with the first support arm portion 16 is provided.
  • the movable electrode portion 15 has a second support arm 18 extending in the Y1-Y2 direction on the X2 side of the center O, and at a position close to the X2 side of the center O, the second support arm A rectangular support conduction portion (anchor portion) 19 integrally formed with 18 is provided.
  • the region between the first support arm 16 and the second support arm 18 and excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is a weight portion 20.
  • the edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 21 and is supported by the second support arm 18 via the elastic support 23.
  • the edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 22 and is supported by the second support arm 18 via the elastic support 24. There is.
  • a plurality of movable counter electrodes 20a extending integrally from the edge on the X1 side of the weight 20 to the X2 side are integrally formed, and on the X1 side from the edge on the X2 side of the weight 20
  • a plurality of extending movable counter electrodes 20b are integrally formed.
  • the movable counter electrode 20 b integrally formed with the weight portion 20 opposes the side on the Y 2 side of the counter electrode 11 c of the first fixed electrode portion 11 through a distance ⁇ 1 at rest.
  • the movable counter electrode 20a on the X1 side is also opposed to the side on the Y2 side of the counter electrode 11b of the first fixed electrode portion 11 via the distance ⁇ 1 at rest.
  • the weight portion 20 is integrally formed with a plurality of movable counter electrodes 20c extending in parallel in the X2 direction from the edge on the X1 side on the Y2 side with respect to the center O, and from the edge on the X2 side in the X1 direction
  • a plurality of movable counter electrodes 20d extending in parallel are integrally formed.
  • the movable counter electrode 20 d is opposed to the side on the Y1 side of the counter electrode 13 c of the second fixed electrode portion 13 through the distance ⁇ 2 at rest. This is the same between the movable counter electrode 20c on the X1 side and the counter electrode 13b.
  • the opposing distances ⁇ 1 and ⁇ 2 at rest are designed to have the same dimensions.
  • the support conduction portion 17 continuous with the first support arm portion 16 and the surface 1 a of the support substrate 1 are fixed via the oxide insulating layer 3 b, and the second support arm portion 18 is fixed.
  • the continuous support conduction portion 19 and the surface 1a of the support substrate 1 are also fixed via the oxide insulating layer 3b.
  • the oxide insulating layer 3b In the movable electrode portion 15, only the support conduction portion 17 and the support conduction portion 19 are fixed to the support substrate 1 by the oxide insulating layer 3b, and other portions, that is, the first support arm portion 16, the second support In the arm portion 18, the weight portion 20, the movable counter electrodes 20a, 20b, 20c, 20d and the elastic support portions 21, 22, 23, 24, the oxide insulating layer between the surface 1a of the support substrate 1 is removed, Between the respective portions and the surface 1 a of the support substrate 1, a gap having a distance corresponding to the thickness dimension of the oxide insulating layer 3 b is formed.
  • the elastic support portions 21, 22, 23, 24 are formed so as to form a meander pattern with thin plate spring portions. The deformation of the elastic support portions 21, 22, 23, 24 allows the weight portion 20 to move in the Y1 direction or the Y2 direction.
  • the frame layer 25 is formed by cutting out the SOI layer 10 in a square frame shape.
  • An oxide insulating layer 3 c is left between the frame layer 25 and the surface 1 a of the support substrate 1.
  • the oxide insulating layer 3 c is provided to surround the entire outer periphery of the movable region of the movable electrode portion 15.
  • the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame are formed on the surface of the SOI layer 10 before processing.
  • a resist layer covering the layer 25 is formed, and the SOI layer in a portion exposed from the resist layer is removed by ion etching means such as deep RIE using high density plasma, and the first fixed electrode portion 11, second The fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are separated from each other.
  • micro holes 11 d formed in the counter electrode 11 c, micro holes 13 d formed in the counter electrode 13 c, and micro holes 20 e formed in the weight portion 20 are illustrated.
  • selective isotropic etching treatment capable of dissolving the oxide insulating layer (SiO 2 layer) without dissolving silicon is performed.
  • the etching solution or the etching gas penetrates into the groove separating the respective portions of the SOI layer 10, and further penetrates into the micropores, whereby the oxide insulating layer is removed.
  • the oxidation insulating layers 3a, 3b and 3c are left only between the support conducting portions 12, 14, 17 and 19 and the frame layer 25 and the surface 1a of the support substrate 1, and the insulating layer is otherwise Is removed.
  • the thickness of the support substrate 1 is about 0.2 to 0.7 mm, the thickness of the SOI layer 10 is about 10 to 30 ⁇ m, and the thickness of the oxide insulating layers 3a, 3b and 3c is about 1 to 3 ⁇ m. is there.
  • the silicon substrate 5 constituting the wiring substrate 2 is formed to have a thickness dimension of about 0.2 to 0.7 mm.
  • Insulating layer 30 is formed on surface 5 a of silicon substrate 5.
  • the insulating layer 30 is an inorganic insulating layer such as SiO 2, SiN, or Al 2 O 3, and is formed by a sputtering process or a CVD process.
  • As the inorganic insulating layer a material is selected in which the difference in thermal expansion coefficient with the silicon substrate is smaller than the difference in thermal expansion coefficients of the conductive metal forming the connection metal layer and the silicon substrate.
  • SiO2 or SiN having a relatively small difference in thermal expansion coefficient with the silicon substrate is used.
  • a second connection metal layer 31 is formed on the surface of the insulating layer 30 so as to face the support conducting portion 12 of the first fixed electrode portion 11.
  • a second connection metal layer 31 (not shown) facing the support conduction portion 14 is formed.
  • the second connection metal layer 32 facing the one support conduction portion 17 of the movable electrode portion 15 is formed on the surface of the insulating layer 30, and similarly, the second connection faces the other support conduction portion 19.
  • a metal layer 32 (not shown) is also formed.
  • a second seal connection metal layer 33 facing the surface of the frame layer 25 is formed on the surface of the insulating layer 30.
  • the second seal connection metal layer 33 is formed of the same conductive metal material as the second connection metal layers 31 and 32.
  • the second seal connection metal layer 33 is formed in a quadrangle facing the frame layer 25 and is formed on the outer periphery of the movable region of the movable electrode portion 15 so as to surround the entire periphery of the movable region .
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are formed of aluminum (Al).
  • a lead layer 34 electrically connected to one of the second connection metal layers 31 and a lead layer 35 electrically connected to the other second connection metal layer 32 are provided inside the insulating layer 30, a lead layer 34 electrically connected to one of the second connection metal layers 31 and a lead layer 35 electrically connected to the other second connection metal layer 32 are provided.
  • the lead layers 34 and 35 are formed of aluminum.
  • the plurality of lead layers 34 and 35 respectively conduct to the respective second connection metal layers 31 and 32.
  • the respective lead layers 34 and 35 pass through the inside of the insulating layer 30 and cross the portion where the second seal connection metal layer 33 is formed without contacting the second seal connection metal layer 33. , And extends outside the area surrounded by the second seal connection metal layer 33.
  • the wiring board 2 is provided with connection pads 36 electrically connected to the respective lead layers 34 and 35 outside the region.
  • the connection pad 36 is formed of aluminum, gold or the like which is a conductive material which is low in resistance and difficult to oxidize.
  • the surface on which the second connection metal layers 31 and 32 are formed and the surface on which the second seal connection metal layer 33 is formed are located on the same plane. Then, a recess 38 is formed in the insulating layer 30 in a region where the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are not formed, toward the surface 5 a of the silicon substrate 5. .
  • the recess 38 is formed in the insulating layer 30 in all parts other than the surface facing the support conducting portions 12, 14, 17, 19 and the frame layer 25. In addition, the recess 38 is formed to a depth halfway to the inside of the insulating layer 30 so that the lead layers 34 and 35 are not exposed.
  • a first connection metal layer 41 facing the second connection metal layer 31 is formed on the surfaces of the support conductive portions 12 and 14 of the SOI layer 10, respectively.
  • a first connection metal layer 42 facing the respective second connection metal layers 32 is formed on the surface 19 by a sputtering process.
  • a first seal connection metal layer 43 facing the second seal connection metal layer 33 is formed on the surface of the frame layer 25 .
  • the first seal connection metal layer 43 is simultaneously formed of the same metal material as the first connection metal layers 41 and 42.
  • the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are eutectic or diffusion bonded to aluminum forming the second connection metal layers 31 and 32 and the second seal connection metal layer 33. It is formed of Ge (germanium) which is a easy metal material.
  • the second connection metal layer 31 and the first connection metal layer 41 are made to face each other, the second connection metal layer 32 and the first connection metal layer 42 are made to face each other, and the second And the first seal connection metal layer 43 face each other. Then, the space between the support substrate 1 and the silicon substrate 5 is pressurized while heating. Thereby, the second connection metal layer 31 and the first connection metal layer 41 are subjected to eutectic bonding or diffusion bonding, and the second connection metal layer 32 and the first connection metal layer 42 are subjected to eutectic bonding or diffusion. Join.
  • the supporting conductive portions 12, 14, 17 and 19 become the oxide insulating layers 3a and 3b and the insulating layer 30.
  • the second seal connection metal layer 33 and the first seal connection metal layer 43 are eutectically bonded or diffusion bonded.
  • the frame layer 25 and the insulating layer 30 are firmly fixed, and the metal seal layer 45 surrounding the entire periphery of the movable region of the movable electrode portion 15 is formed.
  • FIG. 5 is a partially enlarged cross-sectional view showing the vicinity of the support conducting portion 12 in an enlarged manner.
  • FIG. 5 is shown upside down in FIG.
  • the width dimension T10 of the oxide insulating layer 3a interposed between the support conductive portion (bonding layer) 12 and the support substrate 1 is the support conductive portion 12 Narrower than the width dimension T11 of
  • the planar shape of the support conducting portion 12 and the oxide insulating layer 3a is substantially square, it is assumed that the width dimension in the X1-X2 direction and the Y1-Y2 direction orthogonal thereto is substantially the same.
  • the oxide insulating layer 3 a is formed substantially at the center of the bottom of the support conducting portion 12. For this reason, a hollow portion 9 having no oxidation insulating layer between the support substrate 1 and the lower surface of the outer peripheral portion 12 a of the support conducting portion 12 is formed.
  • the reason why the cavity 9 is formed is that, when the unnecessary oxide insulating layer 3a exposed by removing the unnecessary SOI layer 10 is removed by etching in the manufacturing process, the support conductor 12 is formed by over-etching. The oxide insulating layer under the outer peripheral portion 12a of the above is also removed.
  • the width dimension T12 of the first connection metal layer 41 formed on the surface 12b of the support conducting portion 12 is formed with the width dimension T10 or less of the oxide insulating layer 3a. Be done.
  • the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a. Therefore, in plan view as shown in FIG. 6, the entire first connection metal layer 41 can be overlapped in the oxide insulating layer 3a. That is, the first connection metal layer 41 does not protrude in the X1-X2 direction or the Y1-Y2 direction from the oxide insulating layer 3a in a plan view.
  • the width dimension T13 of the second connection metal layer 31 disposed on the wiring board 2 side is larger than the width dimension T10 of the oxide insulating layer 3a.
  • the first connection metal layer 41 and the second connection metal layer 31 are joined by defining the width dimension of each layer, the first connection metal layer 41 and the first connection metal layer 41
  • the load area acting between the second connection metal layers 31 can be restricted by the joint surface of the first connection metal layer 41 having a narrow width dimension.
  • the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a, and the entire first connection metal layer 41 can be It is possible to overlap in the plane of the oxide insulating layer 3a, and it is possible to effectively reduce the load acting on the outer peripheral portion 12a where the cavity 9 is located below the support conduction portion 12.
  • the width dimension T13 of the second connection metal layer 31 is made larger than the width dimension of the first connection metal layer 41.
  • a stable bonding structure can be formed between the support conducting portion 12 and the wiring board 2.
  • width dimension T19 of both the first connection metal layer 41 and the second connection metal layer 31 is made substantially the same, and both width dimensions T19 of the oxide insulating layer 3a are made equal. You may form so that it may become smaller than width dimension T10.
  • a recessed area 31 a is formed substantially at the center of the second connection metal layer 31.
  • the recessed region 31a is formed by forming a recess having a depth to which the surface of the lead layer is exposed in the insulating layer 30, and forming the second connection metal layer 31 by sputtering or the like so as to follow the recess.
  • Width dimension T16 of the 2nd connection metal layer 31 in this form is a straight line width between both ends 31b and 31b. Since the recessed area 31a formed in the second connection metal layer 31 is a non-joined area, in order to suppress a decrease in the bonding area, the second connection metal layer 31 is formed so that the recessed area 31a becomes smaller. Is preferred.
  • concave region 31a of second connection metal layer 31 is shifted so as not to face first connection metal layer 41 as shown by a dotted line in FIG. 9, to form connection region 31c extending long from one end of concave region 31a. It is more preferable that the flat connection region 31c and the flat first connection metal layer 41 be joined together.
  • the width dimension of the second connection metal layer 31 at this time is defined by the width dimension of the flat connection region 31 c.
  • the width dimension T17 of the first connection metal layer 41 is smaller than the width dimension T18 of the second connection metal layer 31, but the width dimension T10 of the oxide insulating layer 3a Slightly wider than.
  • the load area acting between the first connection metal layer 41 and the second connection metal layer 31 is restricted by the bonding surface of the first connection metal layer 41 having a narrow width dimension T17. it can. Therefore, compared with the conventional structure in which the width dimensions of both of the first connection metal layer 41 and the second connection metal layer 31 are equally large, the weight acting on the outer peripheral portion 12a of the support conductive portion 12 is conventionally It can be reduced compared with that.
  • the first connection metal layer 41 whose width dimension T17 is narrowed has a wide width dimension T18.
  • the alignment can be performed with high accuracy so as to be contained in the connection metal layer 31 and the variation in the bonding strength can be reduced.
  • the oxide insulating layer 3 c interposed between the frame layer 25 and the support substrate 1 is also smaller than the width dimension of the frame layer 25. Therefore, the width dimensions of the first seal connection metal layer 43 and the second seal connection metal layer 33 are also the same as the width dimensions of the first connection metal layers 41 and 42 and the second connection metal layers 31 and 32. It is preferable that the metal seal layer 45 that is strong can be formed and the sealability can be improved.
  • the metal seal layer 45 is not formed by bonding the first seal connection metal layer 43 and the second seal connection metal layer 33, only the width dimension of the bonding structure of the support conductive portions 12, 14, 17, 19 Should be regulated. Further, only the width dimension of the joint structure of a part of the supporting and conducting parts may be regulated. Alternatively, the above-described width dimension relationship may be restricted to only the metal seal layer 45 from the viewpoint of enhancing the sealability. However, as shown in FIG. 4, it is most preferable to restrict the above-described width dimension relationship to both the joint structure of all the supporting and conducting parts and the metal seal layer 45.
  • the MEMS sensor described above has a structure in which the SOI substrate and the wiring substrate 2 are stacked, and is thin as a whole.
  • the support conducting portions 12, 14, 17, 19 are joined to the wiring substrate 2 by eutectic bonding or diffusion bonding of the second connection metal layers 31, 32 and the first connection metal layers 41, 42.
  • this bonding layer is thin and small in area, and the support conducting portions 12, 14, 17, 19 and the support substrate 1 are bonded through the oxide insulating layers 3a and 3b of the inorganic insulating material. Therefore, even if the ambient temperature rises, the thermal stress of the bonding layer hardly affects the support structure of the support conducting portions 12, 14, 17 and 19, and the fixed electrode portions 11 and 13 and the movable electrode portion 15 due to the thermal stress. Distortion and the like are unlikely to occur.
  • the metal seal layer 45 surrounding the periphery of the movable region of the movable electrode portion 15 is a bonding layer formed thin between the frame layer 25 and the insulating layer 30, and the frame layer 25 has a sufficient thickness dimension Because of the thermal stress of the metal seal layer 45, distortion and the like are less likely to occur in the support substrate 1 and the silicon substrate 5 made of silicon.
  • the overall thickness of the MEMS sensor is substantially determined by the thickness of the support substrate 1 and the silicon substrate 5, the thickness of the SOI layer 10, and the thickness of the insulating layer 30.
  • the thickness dimensions of the respective layers can be managed with high accuracy, so that variations in thickness are less likely to occur.
  • the recess 38 facing the movable region of the movable electrode portion 15 is formed in the insulating layer 30, the movable electrode portion 15 has a movement margin (margin) in the thickness direction even if the whole is thin. Even if a large acceleration acts in the thickness direction from the outside, the weight 20 and the movable counter electrodes 20a, 20b, 20c, and 20d hardly hit the insulating layer 30, and malfunction does not easily occur.
  • the wiring substrate 2 is configured to have the silicon substrate 5 and the surface 5 a of the silicon substrate 5 including the insulating layer 30, the lead layers 34 and 35, and the second connection metal layer 31. Be done. Therefore, as shown in FIG. 12 which will be described later, the thinning can be realized with a simple structure as compared with the form in which the conduction path to the support conduction portion is secured using the through wiring penetrating to the silicon substrate.
  • the MEMS sensor can be used as an acceleration sensor that detects an acceleration in the Y1 direction or the Y2 direction.
  • the reaction causes the weight 20 of the movable electrode 15 to move in the Y2 direction.
  • an opposing distance ⁇ 1 between the movable counter electrode 20b and the fixed side counter electrode 11c shown in FIG. 2 is increased, and the capacitance between the movable counter electrode 20b and the counter electrode 11c is reduced.
  • the opposing distance ⁇ 2 between the movable counter electrode 20d and the counter electrode 13c shown in FIG. 3 is narrowed, and the capacitance between the movable counter electrode 20b and the counter electrode 13c is increased.
  • the weight portion 20 of the movable electrode portion 15 moves in the thickness direction in response to the acceleration in the direction orthogonal to the XY plane, and the counter electrodes 11b and 11c of the fixed electrode portions 11 and 13 move.
  • 13b, 13c and the movable counter electrodes 20a, 20b, 20c of the movable electrode section 15 are shifted in the thickness direction of the movable electrode section 15, changing the counter area, and the movable counter electrodes at this time It may be one that detects a change in electrostatic capacitance with the counter electrode.
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are aluminum, and the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are Ge.
  • Au (gold) There are (gold) -Ge (germanium), Au (gold) -Sn (tin) and the like.
  • the combination of these metals makes it possible to perform bonding at a relatively low temperature of 450 ° C. or less, which is a temperature below the melting point of each metal.
  • FIG. 11 is a cross-sectional view showing a MEMS sensor according to still another embodiment.
  • an IC package 100 is used instead of the silicon substrate 5.
  • a detection circuit for detecting a change in electrostatic capacitance between the counter electrode and the movable counter electrode is incorporated.
  • An insulating layer 30 is formed on the top surface 101 of the IC package 100, and second connection metal layers 31 and 32 and a second seal connection metal layer 33 are formed on the surface of the insulating layer 30.
  • the second connection metal layers 31 and 32 are electrically connected to the electrode pads and the like appearing on the upper surface 101 of the IC package 100 through the connection layers 134 and 135 such as through holes penetrating the insulating layer 30. It is connected to the electric circuit inside.
  • the width dimension relationship of the bonding structure of the bonding layers is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
  • FIG. 12 is a cross-sectional view showing a MEMS sensor of still another embodiment.
  • a through wiring layer 28 which is also made of silicon and which penetrates the silicon substrate 27 constituting the wiring substrate 26 is provided.
  • An insulating layer 29 insulates between the through wiring layer 28 and the silicon substrate 27.
  • second connection metal layers 31 and 32 are formed on the surface 27 a of the silicon substrate 27 facing the SOI layer 10 in contact with the through wiring layer 28.
  • the insulating layer 29 covers the surface 27b opposite to the surface facing the SOI layer 10 of the silicon substrate 27, and as shown in FIG. 12, the lead layer 37 in contact with the through wiring layer 28 is formed inside the insulating layer 29. It is done.
  • the width dimension relationship of the bonding structure of the bonding layers is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
  • FIG. 13 schematically shows a preferred embodiment of the metal seal layer, in which (a) is a longitudinal sectional view showing a state before joining, and (b) is a longitudinal sectional view showing a state after joining .
  • the MEMS sensor includes, for example, a lower substrate 50 formed of silicon, an upper substrate 52, and a lower connection metal layer 51 formed on the upper surface of the lower substrate 50; And the upper connection metal layer 53 formed on the upper substrate 52.
  • the width dimension T20 of the upper connection metal layer 53 is smaller than the width dimension T21 of the lower connection metal layer 51.
  • the bonding surface 51a of the lower connection metal layer (wide connection metal layer) 51 is a flat surface, but the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) is It is formed in the uneven shape.
  • the convex portion 54 formed on the bonding surface 53a of the upper connection metal layer 53 is formed in a tapered shape.
  • the convex portions 54 may be formed in a dot shape on the bonding surface 53 a in a dotted manner, or may be formed in a convex shape.
  • connection metal layer (narrow connection metal layer) 53 is formed of a metal material having a higher hardness at the time of bonding than the lower connection metal layer (wide connection metal layer) 51.
  • the upper connection metal layer 53 is preferably formed of, for example, a layer having Ge, in particular, a Ge layer.
  • the lower connection metal layer 51 is preferably formed of, for example, a layer containing Al, in particular, an Al layer or an AlCu layer.
  • the temperature is raised to a temperature at which the eutectic reaction starts, and pressure is applied between the lower substrate 50 and the upper substrate 52.
  • FIG. 14 shows a comparative example in which the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) 53 is formed as a flat surface without being an uneven surface, unlike FIG. 13A.
  • the bonding surface 53a is formed with an uneven surface. While the convex portion 54 of the upper connection metal layer 53 bites into the lower connection metal layer 51 without any deformation due to high pressure at the initial stage of bonding, the lower connection metal layer 51 follows the uneven shape of the bonding surface 53a. As a result, formation of the void 55 and the unbonded region 56 shown in FIG. 14 at the bonded interface shown in FIG. 13B can be effectively suppressed. As shown in FIG. 13B, the interface between the lower connection metal layer 53 and the upper connection metal layer 53 is in close contact. Therefore, as compared with the configuration shown in FIG. 14, the bonding strength and the sealing airtightness can be improved.
  • the bonding surface 51a of the lower connection metal layer 51 is almost the same as that of the upper connection metal layer 53 as shown in FIG.
  • the bonding area can be made larger than in the configuration in which the flat surfaces are bonded as shown in FIG. 14, and the bonding pressure per unit area applied to the bonding surfaces of the connecting metal layers 51 and 53. Declines. Therefore, the upper connection metal layer (narrow connection metal layer) 53 can be suppressed from being pushed into the lower connection metal layer (wide connection metal layer) 51 more than necessary, and a stopper function can be exhibited.
  • connection metal layer 53 it is preferable to form the joint surface 53a of the connection metal layer 53 on the side where the width dimension is narrow by an uneven surface. Even if it is reversed, it is effective in improving the bonding strength and sealing air tightness as compared with the case of FIG. 14, but the uneven surface of the narrow connecting metal layer 53 on the bonding surface 51a of the wide connecting metal layer 51. By pressing (bonding surface 53a), the other connection metal layer 51 can be closely attached to the whole of the uneven surface, and the bonding strength can be more effectively improved.
  • FIG. 15 is process drawing (longitudinal sectional view) which shows the manufacturing method of the connection metal layer which has a joining surface of uneven
  • connection metal layer 58 is formed on the substrate 57.
  • the connection metal layer 58 is formed of, for example, a Ge layer.
  • the mask layer 59 is partially formed on the surface 58a of the connection metal layer 58.
  • the mask layer 59 is provided at the position of the convex portion 60 (see FIGS. 15 (c) and 15 (d)) formed on the surface 58a, but is formed with a width wider than the minimum width of the convex portion 60.
  • connection metal layer 58 not covered with the mask layer 59 is scraped.
  • the portion of the connection metal layer 58 located below the mask layer 59 is also scraped into, and a tapered convex portion 60 is formed below the mask layer 59.
  • the minimum width of the convex portion 60 is smaller than the width dimension of the mask layer 59.
  • connection metal layer 58 can be easily and appropriately formed in an uneven shape.
  • a frame-like sealing line 62 is formed on the upper surface 50a of the lower substrate 50 by the lower connecting metal layer 51 made of Al or the like shown in FIG.
  • a frame-like sealing line 61 is formed on the lower surface 52a of the upper substrate 52 by the upper connection metal layer 53 made of Ge or the like shown in FIG.
  • the shape of the vertical cross section of the sealing lines 62, 61 is the same as the shape of the vertical cross section of the connecting metal layers 51, 53 shown in FIG. 13 (a).
  • the inner configuration of the metal seal layer formed by joining the sealing lines 62 and 61 in FIG. 16 is not particularly limited, but can be applied to, for example, the structure shown in FIG.
  • FIG. 17 (a) is a plan view of the MEMS sensor
  • FIG. 17 (b) is a longitudinal sectional view taken along the line AA shown in FIG. 17 (a) and viewed from the arrow direction.
  • the metal seal layer 70 shown in FIG. 17 is formed by joining the sealing lines 62 and 61 shown in FIG. 16, and has an enlarged longitudinal cross section similar to that of FIG. 13 (b). Therefore, the MEMS sensor which is excellent in bonding strength and sealing airtightness can be realized.
  • three sensor areas 71, 72, 73 are juxtaposed with a space X1-X2 inside the metal seal layer 70 formed in a frame shape.
  • the acceleration in the Z direction can be detected by the operation of the movable body 74.
  • the acceleration in the Y direction can be detected by the operation of the movable body 75
  • the acceleration in the X direction can be detected by the operation of the movable body 76.
  • the present invention can also be applied to a form in which there is not a movable body but another sensor configuration inside the metal seal layer formed by joining the sealing lines 62 and 61.
  • connection metal layer shown in FIG. 13 can be applied to any of the configurations shown in FIGS. That is, for example, taking FIG. 5 as an example, the bonding surface 41 a of the first connection metal layer (narrow connection metal layer) 41 formed to have a narrow width T12 is formed as an uneven surface. Further, the first connection metal layer 41 is formed of a material having higher hardness at the time of bonding as compared to the second connection metal layer (wide connection metal layer) 31 in which the width dimension T13 is formed to be wide.
  • the bonding surface of the connection metal layer on the side formed of a material with high hardness at bonding is formed by the uneven surface. Be done.
  • Reference Signs List 1 support substrate 2 wiring substrate 3a, 3b, 3c oxide insulating layer 5, 27 silicon substrate 10 SOI layer 11 first fixed electrode portion 11b, 11c counter electrode 12 supporting conductive portion (anchor portion) 13 second fixed electrode portion 13b, 13c counter electrode 14 supporting conductive portion (anchor portion) 15 Movable electrode portion 16 First support arm portion 17 Support conducting portion (anchor portion) 18 Second Support Arm 19 Support Conductor (Anchor) Reference Signs List 20 weight portion 20a, 20b, 20c, 20d movable counter electrode 21, 22, 23, 24 elastic support portion 25 frame layer 28 through wiring layer 29, 30 insulating layer 31, 32 second connection metal layer 33 second seal Connection metal layer 34, 35 Lead layer 38 Recess 41, 42 First connection metal layer 43 First seal connection metal layer 45, 70 Metal seal layer 50 Lower substrate 51 Lower connection metal layer 51a Bonding surface 52 Upper substrate 53 Upper connection metal layer 53a Bonding surface (concave / convex surface) 54, 60 convex portion 58 connection metal layer 59 mask layer 61, 62 sealing line 71 to

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

Provided is a MEMS sensor in which, in particular, a more stable joint structure between a support conduction portion and a wiring substrate than in the prior art can be obtained. A support conduction portion (joint layer) (12) is fixedly supported by an oxidized insulating layer (3a).  The width dimension (T10) of the oxidized insulating layer (3a) is narrower than the width dimension (T11) of the support conduction portion (12).  A first connecting metal layer (41) is formed on the surface (12b) of the support conduction portion (12).  A second connecting metal layer (31) is formed on the wiring substrate side, and the connecting metal layers (31, 41) are joined.  The width dimension (T12) of the first connecting metal layer (41) is smaller than the width dimension (T13) of the second connecting metal layer (31) and the width dimension (T10) of the oxidized insulating layer (3a).

Description

ＭＥＭＳセンサMEMS sensor
　本発明は、シリコン基板を微細加工して形成されたＭＥＭＳセンサに係り、特に、支持導通部（アンカ部）等の接合構造に関する。 The present invention relates to a MEMS sensor formed by micromachining a silicon substrate, and more particularly to a bonding structure such as a support conduction portion (an anchor portion).
　ＭＥＭＳ（Micro-Electro-Mechanical Systems）センサは、ＳＯＩ（Silicon on Insulator）基板を構成するＳＯＩ層を微細加工することで、可動電極部と固定電極部が形成される。この微細なセンサは、可動電極部の動作により、加速度センサ、圧力センサ、振動型ジャイロ、またはマイクロリレーなどとして使用される。 In a micro-electro-mechanical systems (MEMS) sensor, a movable electrode portion and a fixed electrode portion are formed by microfabrication of an SOI layer constituting an SOI (Silicon on Insulator) substrate. This fine sensor is used as an acceleration sensor, a pressure sensor, a vibrating gyro, a micro relay, or the like by the operation of the movable electrode portion.
　図１８は、従来のＭＥＭＳセンサの部分断面図、図１９は、図１８に示す支持導通部（アンカ部）の接合前の状態を示す拡大断面図である。 FIG. 18 is a partial cross-sectional view of a conventional MEMS sensor, and FIG. 19 is an enlarged cross-sectional view showing a state before bonding of the support conducting part (an anchor part) shown in FIG.
　図１８に示すＭＥＭＳセンサは、支持基板２００、酸化絶縁層２０３及びＳＯＩ層２１０にて構成されるＳＯＩ基板と、ＳＯＩ基板に対向して設けられた配線基板２１１とを有して構成される。 The MEMS sensor illustrated in FIG. 18 includes an SOI substrate including a support substrate 200, an oxide insulating layer 203, and an SOI layer 210, and a wiring substrate 211 provided to face the SOI substrate.
　可動電極部及び固定電極部で構成される可動領域２０１と、可動電極部及び固定電極部の各支持導通部２０２は前記ＳＯＩ層２１０を微細加工して形成されたものである。 The movable region 201 including the movable electrode portion and the fixed electrode portion, and the support conductive portions 202 of the movable electrode portion and the fixed electrode portion are formed by micromachining the SOI layer 210.
　図１８，図１９に示すように支持導通部２０２の表面２０２ａには第１の接続金属層２１２が設けられている。 As shown in FIGS. 18 and 19, the first connection metal layer 212 is provided on the surface 202 a of the support conducting part 202.
　配線基板２１１は、シリコン基板２０４、絶縁層２０５、及び、リード層２０６等を備えて構成され、前記支持導通部２０２と対向する側に第２の接続金属層２１３が形成されている。第２の接続金属層２１３はリード層２０６と電気的に接続されている。そして、図１８に示すように、第１の接続金属層２１２と第２の接続金属層２１３とが接合されている。 The wiring board 211 is configured to include a silicon substrate 204, an insulating layer 205, a lead layer 206, and the like, and a second connection metal layer 213 is formed on the side facing the supporting conductive portion 202. The second connection metal layer 213 is electrically connected to the lead layer 206. And as shown in FIG. 18, the 1st connection metal layer 212 and the 2nd connection metal layer 213 are joined.
特開２００５－２３６１５９号公報JP 2005-236159 A
　図１９に示すように、支持導通部２０２と支持基板２００との間に介在する酸化絶縁層２０３の幅寸法Ｔ１は、支持導通部２０２の幅寸法Ｔ２に比べて狭い。これら幅寸法Ｔ１，Ｔ２の関係は、支持導通部２０２下に位置する酸化絶縁層２０３以外の酸化絶縁層２０３をエッチングにて除去したときに、オーバーエッチングにより、支持導通部２０２の外周下の酸化絶縁層２０３も一部侵食されて、空洞部２１４が形成されたことによるものである。 As shown in FIG. 19, the width dimension T1 of the oxide insulating layer 203 interposed between the support conduction portion 202 and the support substrate 200 is narrower than the width dimension T2 of the support conduction portion 202. The relationship between the width dimensions T1 and T2 is that, when the oxide insulating layer 203 other than the oxide insulating layer 203 located under the support conductive portion 202 is removed by etching, the oxidation under the outer periphery of the support conductive portion 202 is caused by overetching. The insulating layer 203 is also partially corroded to form the cavity 214.
　一方、支持導通部２０２の表面２０２ａに形成された第１の接続金属層２１２の幅寸法Ｔ３と、配線基板２１１側に設けられた第２の接続金属層２１３の幅寸法Ｔ４は略同一であり、幅寸法Ｔ３，Ｔ４は、酸化絶縁層２０３の幅寸法Ｔ１よりも広い。 On the other hand, the width dimension T3 of the first connection metal layer 212 formed on the surface 202a of the support conduction portion 202 and the width dimension T4 of the second connection metal layer 213 provided on the wiring substrate 211 side are substantially the same. The width dimensions T3 and T4 are wider than the width dimension T1 of the oxide insulating layer 203.
　なお、図１８，図１９では、Ｘ１－Ｘ２方向の幅寸法が図示されているが、これに直交するＹ１－Ｙ２方向の幅寸法も上記と同様の関係にある。 Although FIGS. 18 and 19 show the width dimensions in the X1-X2 direction, the width dimensions in the Y1-Y2 direction orthogonal to this are also in the same relationship as described above.
　このため、第１の接続金属層２１２と第２の接続金属層２１３間を接合する際、図１９のように下方向へ加重をかけたときに、支持導通部２０２の外周下に空洞部２１４が形成されていることで、支持導通部２０２の外周部２０２ｂが下方向へ撓み易い。これにより、第１の接続金属層２１２と第２の接続金属層２１３間の接合面に均一な加重をかけることができない。したがって、第１の接続金属層２１２と第２の接続金属層２１３間の接合強度がばらついたり、接合強度が低下する等の問題があった。また、支持導通部２０２の外周部２０２ｂが下方向に撓むことで、支持導通部２０２の外周部２０２ｂが破損する可能性もあった。 Therefore, when the first connection metal layer 212 and the second connection metal layer 213 are joined, when the load is applied downward as shown in FIG. The outer peripheral portion 202 b of the support conducting portion 202 is easily bent downward because of the formation of As a result, the bonding surface between the first connection metal layer 212 and the second connection metal layer 213 can not be uniformly weighted. Therefore, there is a problem that the joint strength between the first connection metal layer 212 and the second connection metal layer 213 varies, the joint strength decreases, and the like. In addition, there is also a possibility that the outer peripheral portion 202 b of the support conductive portion 202 may be damaged by the downward movement of the outer peripheral portion 202 b of the support conductive portion 202.
　また、支持導通部２０２は、検出精度を向上させるために可動領域２０１を広く取るべく、できる限り小さく形成されることが好適である。したがって、支持導通部２０２を大きく形成して相対的に空洞部２１４の影響を小さくすることはできなかった。 Further, it is preferable that the support conduction portion 202 be formed as small as possible in order to widen the movable region 201 in order to improve detection accuracy. Therefore, the influence of the hollow portion 214 can not be relatively reduced by forming the support conduction portion 202 large.
　このように従来では形成領域が限られた支持導通部２０２に対して、安定した接合構造を形成することが出来なかった。 As described above, in the related art, it has been impossible to form a stable bonding structure with respect to the support conducting portion 202 in which the formation region is limited.
　そこで本発明は上記従来の課題を解決するものであり、特に、従来に比べて、安定した支持導通部等の接合層と配線基板間の接合構造を得ることが出来るＭＥＭＳセンサを提供することを目的としている。 Therefore, the present invention solves the above-described conventional problems, and in particular, to provide a MEMS sensor capable of obtaining a bonding structure between a bonding layer such as a supporting conductive portion and a wiring substrate, which is more stable than the conventional. The purpose is.
　本発明におけるＭＥＭＳセンサは、支持基板、中間層、及び機能層の順に積層される第１の基板と、前記機能層と対向して、前記機能層に形成される可動電極部及び前記固定電極部との導通経路を備える配線基板と、を有し、
　前記機能層には、前記中間層に固定支持されるとともに、前記配線基板と接合される接合層が形成されており、
　前記接合層と前記支持基板間に位置する中間層の幅寸法は、前記接合層の幅寸法よりも小さく、
　前記接合層の表面に形成された第１の接続金属層と、前記配線基板の表面に形成され前記第１の接続金属層と接合される第２の接続金属層のうち、一方の幅寸法が他方の幅寸法に比べて狭いことを特徴とするものである。 The MEMS sensor according to the present invention includes a first substrate on which a support substrate, an intermediate layer, and a functional layer are stacked in this order, a movable electrode portion formed on the functional layer facing the functional layer, and the fixed electrode portion And a wiring substrate having a conduction path with the
A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
The width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
The width dimension of one of the first connection metal layer formed on the surface of the bonding layer and the second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer is the same. It is characterized in that it is narrower than the other width dimension.
　これにより、第１の接続金属層と第２の接続金属層間に作用する加重領域を、幅寸法が狭い接続金属層の接合面で規制できる。よって、接合層の外周部（支持基板と接合層との間に形成された空洞部と対向する部分）に作用する加重を、従来に比べて低減できる。また、第１の接続金属層と第２の接続金属層の幅寸法に差をつけることで、幅寸法が狭くされた側の接続金属層が、幅寸法が広い側の接続金属層の内に収まるように、位置合わせを高精度に行うことが出来、接合強度のばらつきを小さくすることができる。以上により、第１の接続金属層と第２の接続金属層間の接合面に、従来に比べて均一な加重を作用させやすく、また接合層の外周部の破損を抑制できる等、安定した接合構造を得ることが出来る。 As a result, it is possible to regulate the load area acting between the first connection metal layer and the second connection metal layer at the junction surface of the connection metal layer having a narrow width. Therefore, the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared to the prior art. Further, by making the width dimensions of the first connection metal layer and the second connection metal layer different from each other, the connection metal layer on the side where the width dimension is narrowed is within the connection metal layer on the side where the width dimension is wide. Positioning can be performed with high accuracy so that the variation in bonding strength can be reduced. As described above, the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
　本発明では、前記幅寸法が狭い側の接続金属層の前記幅寸法は、前記中間層の幅寸法以下であることが好ましい。これにより、より効果的に、第１の接続金属層と第２の接続金属層間の接合面に、均一な加重を作用させることが出来、より安定した接合構造を得ることが出来る。 In the present invention, it is preferable that the width of the connecting metal layer on the narrow side of the width is equal to or less than the width of the intermediate layer. As a result, uniform load can be applied to the junction surface between the first connection metal layer and the second connection metal layer more effectively, and a more stable junction structure can be obtained.
　また本発明では、前記幅寸法が狭い側の接続金属層の接合面が凹凸形状で形成されていることが好ましい。このとき、前記幅寸法が狭い側の接続金属層は、Ｇｅを有して形成され、前記幅寸法が広い側の接続金属層はＡｌを有して形成されることが好ましい。 Further, in the present invention, it is preferable that the bonding surface of the connection metal layer on the side where the width dimension is narrow is formed in a concavo-convex shape. At this time, it is preferable that the connecting metal layer on the narrow side of the width is formed with Ge, and the connecting metal layer on the wide side of the width is formed of Al.
　また上記発明は、各接続金属層同士が接合されて、金属シール層が形成されている構成に好ましく適用される。 Moreover, the said invention is preferably applied to the structure in which each connection metal layer is joined and the metal seal layer is formed.
　上記のように、幅寸法が狭い側の接続金属層の接合面を凹凸形状としたことで、各接続金属層の界面をより密着させることができる。特に、幅寸法が狭い側の接続金属層をＧｅとし、幅寸法が広い側の続金属層をＡｌとすることで、接合時に前記接続金属層の凹凸面（接合面）がほとんど変形せずに他方の接続金属層内に押し込まれ、各接合面間をより効果的に密着させることが出来る。したがって、接合強度を高めることができる。特に上記したように金属シール層として用いる形態では、接合強度とともに封止気密性を効果的に向上させることが可能になる。 As described above, by forming the bonding surface of the connecting metal layer on the side with the narrow width dimension in a concavo-convex shape, the interfaces of the connecting metal layers can be more closely attached. In particular, by setting the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al, the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, bonding strength can be increased. In particular, in the embodiment used as the metal seal layer as described above, it is possible to effectively improve the sealing airtightness as well as the bonding strength.
　また、接合面を凹凸面としたことで、平らな面同士の接合に比べて、接合面積を大きくでき、このため、接合時に、各接合面間がほぼ密着した状態になると、単位面積当たりの接合圧力を効果的に低下させることができる。したがって接合の際、各接続金属層同士が必要以上に押し込まれるのを抑制でき、ストッパ的な機能を発揮させることが出来る。 In addition, by making the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
　あるいは本発明におけるＭＥＭＳセンサは、支持基板、中間層、及び機能層の順に積層される第１の基板と、前記機能層と対向して、前記機能層に形成される可動電極部及び前記固定電極部との導通経路を備える配線基板と、を有し、
　前記機能層には、前記中間層に固定支持されるとともに、前記配線基板と接合される接合層が形成されており、
　前記接合層と前記支持基板間に位置する中間層の幅寸法は、前記接合層の幅寸法よりも小さく、
　前記接合層の表面に形成された第１の接続金属層と、前記配線基板の表面に形成され前記第１の接続金属層と接合される第２の接続金属層のうち、少なくとも一方の幅寸法が前記中間層の幅寸法以下であることを特徴とするものである。 Alternatively, in the MEMS sensor according to the present invention, a first substrate on which a support substrate, an intermediate layer, and a functional layer are sequentially stacked, a movable electrode portion formed on the functional layer facing the functional layer, and the fixed electrode A wiring substrate provided with a conduction path with the
A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
The width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
The width dimension of at least one of a first connection metal layer formed on the surface of the bonding layer, and a second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer Is equal to or less than the width dimension of the intermediate layer.
　これにより、接合層の外周部（支持基板と接合層との間に形成された空洞部と対向する部分）に作用する加重を、従来に比べて低減できる。以上により、第１の接続金属層と第２の接続金属層間の接合面に、従来に比べて均一な加重を作用させやすく、また接合層の外周部の破損を抑制できる等、安定した接合構造を得ることが出来る。 Thereby, the load acting on the outer peripheral portion of the bonding layer (the portion facing the hollow portion formed between the support substrate and the bonding layer) can be reduced as compared with the prior art. As described above, the bonding surface between the first connection metal layer and the second connection metal layer can be more easily subjected to a uniform load than in the conventional case, and breakage of the outer peripheral portion of the bonding layer can be suppressed. You can get
　また本発明では、具体的には、前記接合層は、前記可動電極部及び前記固定電極部の夫々に接続される支持導通部である。あるいは、前記接合層は、前記可動電極部及び前記固定電極部と分離して形成され、前記可動電極部の可動領域を囲む枠体層であり、前記第１の接続金属層と前記第２の接続金属層とで、前記可動領域の外周を囲む金属シール層が形成されている。 Further, in the present invention, specifically, the bonding layer is a support conducting portion connected to each of the movable electrode portion and the fixed electrode portion. Alternatively, the bonding layer is a frame layer formed separately from the movable electrode portion and the fixed electrode portion and surrounding the movable region of the movable electrode portion, and the first connection metal layer and the second connection metal layer are formed. A metal seal layer surrounding the outer periphery of the movable region is formed by the connection metal layer.
　また本発明では、前記第１の接続金属層と前記第２の接続金属層とが、共晶接合又は拡散接合されていることが好ましい。これにより、第１の接続金属層と第２の接続金属層間を強固に接合できる。また接合層の厚さ寸法は薄く、支持基板と配線基板の間隔を高精度に決めることができる。よって寸法精度に優れ接合強度が強いＭＥＭＳセンサに出来る。 Further, in the present invention, preferably, the first connection metal layer and the second connection metal layer are eutectic-bonded or diffusion-bonded. Thereby, the first connection metal layer and the second connection metal layer can be strongly joined. Further, the thickness dimension of the bonding layer is thin, and the distance between the supporting substrate and the wiring substrate can be determined with high accuracy. Therefore, it is possible to make a MEMS sensor excellent in dimensional accuracy and strong in bonding strength.
　また本発明では、前記配線基板は、シリコン基板と、前記シリコン基板の表面に、絶縁層とこの絶縁層の内部に埋設された前記可動電極部及び前記固定電極部の夫々に電気的に接続されるリード層と、前記第２の接続金属層と、を有して形成されることが好ましい。これにより配線基板を簡単な構造で形成できると共に、ＭＥＭＳセンサの薄型化を実現できる。 In the present invention, the wiring substrate is electrically connected to the silicon substrate, the insulating layer, and the movable electrode portion and the fixed electrode portion embedded in the insulating layer on the surface of the silicon substrate. Preferably, it is formed to have a lead layer and the second connection metal layer. Thus, the wiring substrate can be formed with a simple structure, and the thinning of the MEMS sensor can be realized.
　また本発明におけるＭＥＭＳセンサは、
　上側基板と、前記上側基板の下面に形成された上側接続金属層と、下側基板と、前記下側基板の上面に形成された下側接続金属層と、を有し、
　前記上側接続金属層と前記下側接続金属層とが接合されて金属シール層が形成されており、
　前記上側接続金属層と、前記下側接続金属層とのうち、一方の幅寸法が他方の幅寸法に比べて狭いことを特徴とするものである。 The MEMS sensor in the present invention is
An upper substrate, an upper connection metal layer formed on the lower surface of the upper substrate, a lower substrate, and a lower connection metal layer formed on the upper surface of the lower substrate;
The upper connection metal layer and the lower connection metal layer are joined to form a metal seal layer,
Among the upper connection metal layer and the lower connection metal layer, one width dimension is narrower than the other width dimension.
　前記幅寸法が狭い側の接続金属層の接合面が凹凸形状で形成されていることが好ましい。 It is preferable that the bonding surface of the connection metal layer on the side with the narrow width is formed in a concavo-convex shape.
　上記により、上側接続金属層と下側接続金属層間に作用する加重領域を、幅寸法が狭い側の接続金属層の接合面で規制できる。また幅寸法が狭い側の接続金属層が、幅寸法が広い側の接続金属層の内に収まるように、位置合わせを高精度に行うことが出来、接合強度のばらつきを小さくすることができる。 According to the above, it is possible to regulate the load area acting between the upper connection metal layer and the lower connection metal layer at the bonding surface of the connection metal layer on the side with the narrow width. Further, the alignment can be performed with high accuracy so that the connection metal layer on the narrow width side is contained in the connection metal layer on the wide width side, and the variation of the bonding strength can be reduced.
　また本発明では、幅寸法が狭い側の接続金属層の接合面を凹凸形状としたことで、各接続金属層の界面をより密着させることができる。特に、幅寸法が狭い側の接続金属層をＧｅとし、幅寸法が広い側の続金属層をＡｌとすることで、接合時に前記接続金属層の凹凸面（接合面）がほとんど変形せずに他方の接続金属層内に押し込まれ、各接合面間をより効果的に密着させることが出来る。したがって、接合強度を高めることができるとともに封止気密性を効果的に向上させることが可能になる。 Further, in the present invention, the interface between the connection metal layers can be more closely adhered by forming the bonding surface of the connection metal layer having the narrower width dimension in a concavo-convex shape. In particular, by setting the connecting metal layer on the narrow side of the width as Ge and the side metal layer on the wide side of the width as Al, the irregular surface (joining surface) of the connecting metal layer hardly deforms at the time of joining. It can be pressed into the other connection metal layer, and the bonding surfaces can be more effectively in close contact. Therefore, the bonding strength can be enhanced, and the sealing airtightness can be effectively improved.
　また、接合面を凹凸面としたことで、平らな面同士の接合に比べて、接合面積を大きくでき、このため、接合時に、各接合面間がほぼ密着した状態になると、単位面積当たりの接合圧力を効果的に低下させることができる。したがって接合の際、各接続金属層同士が必要以上に押し込まれるのを抑制でき、ストッパ的な機能を発揮させることが出来る。 In addition, by making the bonding surface uneven, the bonding area can be increased as compared to bonding flat surfaces, and therefore, when the bonding surfaces are in close contact with each other at the time of bonding, per unit area The bonding pressure can be effectively reduced. Therefore, when joining, it can suppress that each connection metal layer is pushed in more than necessary, and can exhibit a stopper-like function.
　本発明のＭＥＭＳセンサによれば、支持基板に中間層を介して固定支持される接合層の表面に設けられた第１の接続金属層と、配線基板の表面に形成された第２の接続金属層間の接合面に、従来に比べて均一な加重を作用させやすく、また接合層の外周部の破損を抑制できる等、安定した接合構造を得ることが出来る。 According to the MEMS sensor of the present invention, the first connection metal layer provided on the surface of the bonding layer fixedly supported on the support substrate via the intermediate layer, and the second connection metal formed on the surface of the wiring substrate Compared to the prior art, it is easier to apply a uniform load to the joint surface between layers, and it is possible to obtain a stable joint structure, such as being able to suppress breakage of the outer peripheral portion of the joint layer.
本発明の実施の形態のＭＥＭＳセンサの可動電極部と固定電極部および枠体層の分離パターンを示す平面図、A plan view showing a separation pattern of a movable electrode portion, a fixed electrode portion, and a frame layer of the MEMS sensor according to the embodiment of the present invention; 図１のＩＩ矢視部の拡大平面図、An enlarged plan view of the arrow II in FIG. 1; 図１のＩＩＩ矢視部の拡大平面図、An enlarged plan view of a portion III in FIG. 1; ＭＥＭＳセンサの積層構造を示す断面図であり、図１のＩＶ－ＩＶ線での断面図に相当している、It is sectional drawing which shows the laminated structure of a MEMS sensor, and is equivalent to sectional drawing in the IV-IV line of FIG. 図４の一部分を拡大して示した部分拡大断面図、A partially enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner; 図５の平面図（ただし、配線基板は省略した）、The plan view of FIG. 5 (however, the wiring board is omitted), 図５の実施形態と一部変更した他の実施形態のＭＥＭＳセンサの部分拡大断面図、FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; 図５の実施形態と一部変更した他の実施形態のＭＥＭＳセンサの部分拡大断面図、FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; 図５の実施形態と一部変更した他の実施形態のＭＥＭＳセンサの部分拡大断面図、FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; 図５の実施形態と一部変更した他の実施形態のＭＥＭＳセンサの部分拡大断面図、FIG. 6 is a partially enlarged cross-sectional view of a MEMS sensor of another embodiment partially modified from the embodiment of FIG. 5; ＩＣパッケージを使用した実施の形態を示す断面図、Sectional view showing an embodiment using an IC package, 図４，図１１と異なる実施形態を示す断面図、Sectional drawing which shows embodiment different from FIG. 4, FIG. 金属シール層の好ましい構成を示す部分縦断面図（（ａ）は接合前、（ｂ）は接合後を示す）、A partial longitudinal sectional view showing a preferable configuration of a metal seal layer ((a) shows before bonding, (b) shows after bonding), 図１３の金属シール層の構成に対する比較例を示す金属シール層の縦断面図、13 is a longitudinal sectional view of a metal seal layer showing a comparative example to the configuration of the metal seal layer of FIG. 接合面が凹凸面で形成される側の接続金属層の製造方法を示す工程図（縦断面図）、Process drawing (longitudinal sectional view) showing the manufacturing method of the connection metal layer on the side where the bonding surface is formed by the uneven surface 金属シール層を備えるＭＥＭＳセンサの斜視図（接合前の状態を示す）、A perspective view of a MEMS sensor with a metal seal layer (showing the state before bonding), 別のＭＥＭＳセンサの構成を示す平面図と縦断面図、Top view and longitudinal sectional view showing the configuration of another MEMS sensor; 従来におけるＭＥＭＳセンサの部分断面図、A partial sectional view of a conventional MEMS sensor, 図１８の支持導通部の接合構造を説明するために拡大したものであり、接合前の状態を示す部分拡大断面図、18 is a partially enlarged cross-sectional view showing a state before bonding, which has been enlarged to explain the bonding structure of the support conducting part of FIG. 18;
　図１は本発明の実施の形態のＭＥＭＳセンサを示すものであり、可動電極部と固定電極部および枠体層を示す平面図である。図１では支持基板および配線基板の図示は省略している。図２は図１のＩＩ部の拡大図、図３はＩＩＩ部の拡大図である。図４は、ＭＥＭＳセンサの全体構造を示す断面図であり、図１をＩＶ－ＩＶ線で切断した断面図に相当している。図５は、図４の一部分を拡大して示した部分拡大断面図、図６は図５の平面図（ただし、配線基板は省略した）である。図７ないし図１０は、図５の実施形態と一部変更した他の実施形態のＭＥＭＳセンサの部分拡大断面図である。 FIG. 1 shows a MEMS sensor according to an embodiment of the present invention, and is a plan view showing a movable electrode portion, a fixed electrode portion, and a frame layer. In FIG. 1, the support substrate and the wiring substrate are not shown. FIG. 2 is an enlarged view of part II of FIG. 1, and FIG. 3 is an enlarged view of part III. FIG. 4 is a cross-sectional view showing the entire structure of the MEMS sensor, which corresponds to a cross-sectional view of FIG. 1 taken along line IV-IV. 5 is a partial enlarged cross-sectional view showing a part of FIG. 4 in an enlarged manner, and FIG. 6 is a plan view of FIG. 5 (however, the wiring board is omitted). 7 to 10 are partially enlarged cross-sectional views of the MEMS sensor of another embodiment which is partially modified from the embodiment of FIG.
　図４に示すように、ＭＥＭＳセンサは、支持基板１と配線基板２の間に、ＳＯＩ層（機能層）１０が挟まれている。支持基板１とＳＯＩ層１０の各部は、酸化絶縁層（中間層）３ａ，３ｂ，３ｃを介して接合されている。 As shown in FIG. 4, in the MEMS sensor, an SOI layer (functional layer) 10 is sandwiched between the support substrate 1 and the wiring substrate 2. Each portion of the support substrate 1 and the SOI layer 10 is bonded via the oxidation insulating layers (intermediate layers) 3a, 3b and 3c.
　支持基板１、ＳＯＩ層１０および酸化絶縁層３ａ，３ｂ，３ｃは、例えば、ＳＯＩ（Silicon on Insulator）基板（第１の基板）を微細加工して形成されたものである。 The supporting substrate 1, the SOI layer 10, and the oxide insulating layers 3a, 3b, and 3c are formed, for example, by microfabrication of an SOI (Silicon on Insulator) substrate (first substrate).
　ＳＯＩ層１０には、第１の固定電極部１１、第２の固定電極部１３、可動電極部１５および枠体層２５が分離して形成されている。さらに酸化絶縁層の一部が除去されて、互いに分離された酸化絶縁層３ａ，３ｂ，３ｃが形成されている。 In the SOI layer 10, the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are formed separately. Further, a part of the oxide insulating layer is removed to form oxide insulating layers 3a, 3b and 3c separated from each other.
　図１に示すように、ＳＯＩ層１０の平面形状は、中心（図心）Ｏに対して１８０度の回転対称であり、且つ中心Ｏを通りＸ方向に延びる線に対して上下方向（Ｙ方向）に対称である。 As shown in FIG. 1, the planar shape of the SOI layer 10 is rotationally symmetric 180 degrees with respect to the center (center of gravity) O, and vertically with respect to a line extending in the X direction through the center O (Y direction It is symmetrical to).
　図１に示すように、中心ＯよりもＹ１側に第１の固定電極部１１が設けられている。第１の固定電極部１１では、中心Ｏに接近する位置に四角形の支持導通部（アンカ部）１２が一体に形成されている。図４に示すように、支持導通部１２は酸化絶縁層３ａによって支持基板１の表面１ａに固定されている。第１の固定電極部１１は、前記支持導通部１２のみが前記酸化絶縁層３ａによって支持基板１の表面１ａに固定されており、その他の部分は、支持基板１との間の酸化絶縁層が除去されて、支持基板１の表面１ａとの間に、酸化絶縁層３ａの厚さに相当する間隔の隙間が形成されている。 As shown in FIG. 1, the first fixed electrode portion 11 is provided on the Y1 side of the center O. In the first fixed electrode portion 11, a rectangular support conduction portion (anchor portion) 12 is integrally formed at a position approaching the center O. As shown in FIG. 4, the support conducting portion 12 is fixed to the surface 1 a of the support substrate 1 by the oxide insulating layer 3 a. In the first fixed electrode portion 11, only the support conductive portion 12 is fixed to the surface 1a of the support substrate 1 by the oxide insulating layer 3a, and the other portion is the oxide insulating layer between the support substrate 1 It is removed, and the space | interval of the space | interval corresponded to the thickness of the oxide insulating layer 3a is formed between the surfaces 1a of the support substrate 1.
　図１に示すように、第１の固定電極部１１は、支持導通部１２からＹ１方向に直線的に延びる一定の幅寸法の電極支持部１１ａを有している。電極支持部１１ａのＸ１側には、複数の対向電極１１ｂが一体に形成されており、電極支持部１１ａのＸ２側には、複数の対向電極１１ｃが一体に形成されている。図２には、一方の対向電極１１ｃが示されている。複数の対向電極１１ｃはいずれもＸ２方向へ直線的に延びており、Ｙ方向の幅寸法は一定である。そして、複数の対向電極１１ｃは、Ｙ方向へ一定の間隔を空けて櫛歯状に配列している。Ｘ１側に延びる他方の対向電極１１ｂと、Ｘ２方向に延びる前記対向電極１１ｃは、中心Ｏを通ってＹ方向に延びる線に対して左右対称の形状である。 As shown in FIG. 1, the first fixed electrode portion 11 has an electrode support portion 11a of a fixed width that linearly extends from the support conduction portion 12 in the Y1 direction. A plurality of counter electrodes 11b are integrally formed on the X1 side of the electrode support 11a, and a plurality of counter electrodes 11c are integrally formed on the X2 side of the electrode support 11a. One counter electrode 11c is shown in FIG. Each of the plurality of counter electrodes 11c linearly extends in the X2 direction, and the width dimension in the Y direction is constant. The plurality of counter electrodes 11c are arranged in a comb shape at regular intervals in the Y direction. The other counter electrode 11b extending to the X1 side and the counter electrode 11c extending in the X2 direction are symmetrical with respect to a line extending in the Y direction through the center O.
　中心ＯよりもＹ２側には第２の固定電極部１３が設けられている。第２の固定電極部１３と前記第１の固定電極部１１は、中心Ｏを通ってＸ方向に延びる線に対して上下方向（Ｙ方向）へ対称形状である。すなわち、第２の固定電極部１３は、中心Ｏに接近する位置に設けられた四角形の支持導通部（アンカ部）１４と、この支持導通部１４からＹ２方向へ直線的に延びる一定の幅寸法の電極支持部１３ａを有している。電極支持部１３ａのＸ１側には、電極支持部１３ａから一体に延びる複数の対向電極１３ｂが設けられ、電極支持部１３ａのＸ２側には、電極支持部１３ａから一体に延びる複数の対向電極１３ｃが設けられている。 The second fixed electrode portion 13 is provided on the Y2 side of the center O. The second fixed electrode portion 13 and the first fixed electrode portion 11 are symmetrical in the vertical direction (Y direction) with respect to a line extending in the X direction through the center O. That is, the second fixed electrode portion 13 has a rectangular support conduction portion (anchor portion) 14 provided at a position approaching the center O, and a constant width dimension extending linearly from the support conduction portion 14 in the Y2 direction. The electrode support 13a of A plurality of counter electrodes 13b integrally extending from the electrode support 13a is provided on the X1 side of the electrode support 13a, and a plurality of counter electrodes 13c integrally extending from the electrode support 13a on the X2 side of the electrode support 13a. Is provided.
　図３に示すように、対向電極１３ｃはＸ２方向へ直線状に延び幅寸法が一定であり、且つＹ方向へ一定の間隔で互いに平行に形成されている。Ｘ１側の対向電極１３ｂも同様に一定の幅寸法でＸ１方向へ直線的に延び、Ｙ方向へ一定の間隔で平行に延びている。 As shown in FIG. 3, the counter electrodes 13c extend linearly in the X2 direction, have a constant width dimension, and are formed parallel to each other at a constant interval in the Y direction. Similarly, the opposite electrode 13b on the X1 side linearly extends in the X1 direction with a constant width dimension, and extends in parallel in the Y direction at a constant interval.
　第２の固定電極部１３も、支持導通部１４のみが酸化絶縁層３ａを介して支持基板１の表面１ａに固定されている。それ以外の部分である電極支持部１３ａおよび対向電極１３ｂ，１３ｃは、支持基板１の表面１ａとの間の酸化絶縁層が除去されており、電極支持部１３ａおよび対向電極１３ｂ，１３ｃと、支持基板１の表面１ａとの間に、酸化絶縁層の厚さに相当する間隔の隙間が形成されている。 Also in the second fixed electrode portion 13, only the support conducting portion 14 is fixed to the surface 1 a of the support substrate 1 via the oxide insulating layer 3 a. The oxide insulating layer between the surface 1a of the support substrate 1 and the electrode support 13a and the counter electrodes 13b and 13c, which are the other parts, are removed, and the electrode support 13a and the counter electrodes 13b and 13c are supported. Between the surface 1 a of the substrate 1 and a gap having a distance corresponding to the thickness of the oxide insulating layer is formed.
　図１に示すＳＯＩ層１０は、四角形の枠体層２５の内側が可動領域であり、可動領域では、前記第１の固定電極部１１と第２の固定電極部１３を除く部分が可動電極部１５となっている。可動電極部１５は、前記第１の固定電極部１１と第２の固定電極部１３および枠体層２５から分離されて形成されている。 In the SOI layer 10 shown in FIG. 1, the inside of the rectangular frame layer 25 is the movable region, and in the movable region, the portion excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is the movable electrode portion It is fifteen. The movable electrode portion 15 is formed separately from the first fixed electrode portion 11, the second fixed electrode portion 13 and the frame layer 25.
　図１に示すように、可動電極部１５は、中心ＯよりもＸ１側に、Ｙ１－Ｙ２方向に延びる第１の支持腕部１６を有しており、中心ＯのＸ１側に接近した位置に、第１の支持腕部１６と一体に形成された四角形の支持導通部（アンカ部）１７が設けられている。可動電極部１５は、中心ＯよりもＸ２側に、Ｙ１－Ｙ２方向に延びる第２の支持腕部１８を有しており、中心ＯのＸ２側に接近した位置に、第２の支持腕部１８と一体に形成された四角形の支持導通部（アンカ部）１９が設けられている。 As shown in FIG. 1, the movable electrode portion 15 has a first support arm portion 16 extending in the Y1-Y2 direction on the X1 side of the center O, and at a position close to the X1 side of the center O A rectangular support conduction portion (anchor portion) 17 integrally formed with the first support arm portion 16 is provided. The movable electrode portion 15 has a second support arm 18 extending in the Y1-Y2 direction on the X2 side of the center O, and at a position close to the X2 side of the center O, the second support arm A rectangular support conduction portion (anchor portion) 19 integrally formed with 18 is provided.
　第１の支持腕部１６と第２の支持腕部１８とで挟まれた領域で、且つ第１の固定電極部１１と第２の固定電極部１３を除く部分が、錘部２０となっている。錘部２０のＹ１側の縁部は、弾性支持部２１を介して第１の支持腕部１６に支持されているとともに弾性支持部２３を介して第２の支持腕部１８に支持されている。錘部２０のＹ１側の縁部は、弾性支持部２２を介して第１の支持腕部１６に支持されているとともに、弾性支持部２４を介して第２の支持腕部１８に支持されている。 The region between the first support arm 16 and the second support arm 18 and excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is a weight portion 20. There is. The edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 21 and is supported by the second support arm 18 via the elastic support 23. . The edge on the Y1 side of the weight 20 is supported by the first support arm 16 via the elastic support 22 and is supported by the second support arm 18 via the elastic support 24. There is.
　中心ＯよりもＹ１側では、錘部２０のＸ１側の縁部からＸ２側に延びる複数の可動対向電極２０ａが一体に形成されているとともに、錘部２０のＸ２側の縁部からＸ１側に延びる複数の可動対向電極２０ｂが一体に形成されている。図２に示すように、錘部２０と一体に形成された可動対向電極２０ｂは、第１の固定電極部１１の対向電極１１ｃのＹ２側の辺に対して静止時に距離δ１を介して対向している。同様に、Ｘ１側の可動対向電極２０ａも、第１の固定電極部１１の対向電極１１ｂのＹ２側の辺に対して静止時に距離δ１を介して対向している。 On the Y1 side of the center O, a plurality of movable counter electrodes 20a extending integrally from the edge on the X1 side of the weight 20 to the X2 side are integrally formed, and on the X1 side from the edge on the X2 side of the weight 20 A plurality of extending movable counter electrodes 20b are integrally formed. As shown in FIG. 2, the movable counter electrode 20 b integrally formed with the weight portion 20 opposes the side on the Y 2 side of the counter electrode 11 c of the first fixed electrode portion 11 through a distance δ 1 at rest. ing. Similarly, the movable counter electrode 20a on the X1 side is also opposed to the side on the Y2 side of the counter electrode 11b of the first fixed electrode portion 11 via the distance δ1 at rest.
　錘部２０には、中心ＯよりもＹ２側において、Ｘ１側の縁部からＸ２方向に平行に延びる複数の可動対向電極２０ｃが一体に形成されているとともに、Ｘ２側の縁部からＸ１方向に平行に延びる複数の可動対向電極２０ｄが一体に形成されている。 The weight portion 20 is integrally formed with a plurality of movable counter electrodes 20c extending in parallel in the X2 direction from the edge on the X1 side on the Y2 side with respect to the center O, and from the edge on the X2 side in the X1 direction A plurality of movable counter electrodes 20d extending in parallel are integrally formed.
　図３に示すように、可動対向電極２０ｄは、第２の固定電極部１３の対向電極１３ｃのＹ１側の辺に対して静止時に距離δ２を介して対向している。これは、Ｘ１側の可動対向電極２０ｃと対向電極１３ｂとの間においても同じである。静止時の対向距離δ１とδ２は、同じ寸法となるようように設計されている。 As shown in FIG. 3, the movable counter electrode 20 d is opposed to the side on the Y1 side of the counter electrode 13 c of the second fixed electrode portion 13 through the distance δ2 at rest. This is the same between the movable counter electrode 20c on the X1 side and the counter electrode 13b. The opposing distances δ1 and δ2 at rest are designed to have the same dimensions.
　図４に示すように、第１の支持腕部１６に連続する支持導通部１７と支持基板１の表面１ａとが酸化絶縁層３ｂを介して固定されており、第２の支持腕部１８に連続する支持導通部１９と支持基板１の表面１ａも酸化絶縁層３ｂを介して固定されている。可動電極部１５は、支持導通部１７と支持導通部１９のみが前記酸化絶縁層３ｂによって支持基板１に固定されており、それ以外の部分、すなわち第１の支持腕部１６、第２の支持腕部１８、錘部２０、可動対向電極２０ａ，２０ｂ，２０ｃ，２０ｄおよび弾性支持部２１，２２，２３，２４は、支持基板１の表面１ａとの間の酸化絶縁層が除去されており、これら各部と支持基板１の表面１ａとの間に酸化絶縁層３ｂの厚さ寸法に相当する間隔の隙間が形成されている。 As shown in FIG. 4, the support conduction portion 17 continuous with the first support arm portion 16 and the surface 1 a of the support substrate 1 are fixed via the oxide insulating layer 3 b, and the second support arm portion 18 is fixed. The continuous support conduction portion 19 and the surface 1a of the support substrate 1 are also fixed via the oxide insulating layer 3b. In the movable electrode portion 15, only the support conduction portion 17 and the support conduction portion 19 are fixed to the support substrate 1 by the oxide insulating layer 3b, and other portions, that is, the first support arm portion 16, the second support In the arm portion 18, the weight portion 20, the movable counter electrodes 20a, 20b, 20c, 20d and the elastic support portions 21, 22, 23, 24, the oxide insulating layer between the surface 1a of the support substrate 1 is removed, Between the respective portions and the surface 1 a of the support substrate 1, a gap having a distance corresponding to the thickness dimension of the oxide insulating layer 3 b is formed.
　弾性支持部２１，２２，２３，２４は、薄い板バネ部でミアンダパターンとなるように形成されている。弾性支持部２１，２２，２３，２４が変形することで、錘部２０がＹ１方向またはＹ２方向へ移動可能となっている。 The elastic support portions 21, 22, 23, 24 are formed so as to form a meander pattern with thin plate spring portions. The deformation of the elastic support portions 21, 22, 23, 24 allows the weight portion 20 to move in the Y1 direction or the Y2 direction.
　図１に示すように、枠体層２５は、ＳＯＩ層１０を四角い枠状に切り出すことで形成されている。この枠体層２５と支持基板１の表面１ａとの間には、酸化絶縁層３ｃが残されている。この酸化絶縁層３ｃは、可動電極部１５の可動領域の外側の全周を囲むように設けられている。 As shown in FIG. 1, the frame layer 25 is formed by cutting out the SOI layer 10 in a square frame shape. An oxide insulating layer 3 c is left between the frame layer 25 and the surface 1 a of the support substrate 1. The oxide insulating layer 3 c is provided to surround the entire outer periphery of the movable region of the movable electrode portion 15.
　図１，図４に示す形状のＳＯＩ層１０の製造方法は、加工前のＳＯＩ層１０の表面に、第１の固定電極部１１、第２の固定電極部１３、可動電極部１５および枠体層２５を覆うレジスト層を形成し、レジスト層から露出している部分のＳＯＩ層を、高密度プラズマを使用した深堀ＲＩＥなどのイオンエッチング手段で除去し、第１の固定電極部１１、第２の固定電極部１３、可動電極部１５および枠体層２５を互いに分離させる。 In the method of manufacturing the SOI layer 10 having the shape shown in FIGS. 1 and 4, the first fixed electrode portion 11, the second fixed electrode portion 13, the movable electrode portion 15, and the frame are formed on the surface of the SOI layer 10 before processing. A resist layer covering the layer 25 is formed, and the SOI layer in a portion exposed from the resist layer is removed by ion etching means such as deep RIE using high density plasma, and the first fixed electrode portion 11, second The fixed electrode portion 13, the movable electrode portion 15, and the frame layer 25 are separated from each other.
　このとき、支持導通部１２，１４，１７，１９および枠体層２５を除く全ての領域に、前記深堀ＲＩＥによって、多数の微細孔を形成しておく。図２と図３には、対向電極１１ｃに形成された微細孔１１ｄ、対向電極１３ｃに形成された微細孔１３ｄ、および錘部２０に形成された微細孔２０ｅが図示されている。 At this time, a large number of fine holes are formed by deep RIE in all regions except for the support conducting portions 12, 14, 17 and 19 and the frame layer 25. In FIG. 2 and FIG. 3, micro holes 11 d formed in the counter electrode 11 c, micro holes 13 d formed in the counter electrode 13 c, and micro holes 20 e formed in the weight portion 20 are illustrated.
　深堀ＲＩＥなどによってパターン加工した後に、シリコンを溶解せずに酸化絶縁層（ＳｉＯ2層）を溶解できる選択性の等方性エッチング処理を行う。このときエッチング液又はエッチングガスは、ＳＯＩ層１０の前記各部を分離した溝内に浸透し、さらに前記微細孔内に浸透して、酸化絶縁層が除去される。 After patterning by deep RIE or the like, selective isotropic etching treatment capable of dissolving the oxide insulating layer (SiO 2 layer) without dissolving silicon is performed. At this time, the etching solution or the etching gas penetrates into the groove separating the respective portions of the SOI layer 10, and further penetrates into the micropores, whereby the oxide insulating layer is removed.
　その結果、支持導通部１２，１４，１７，１９および枠体層２５と、支持基板１の表面１ａとの間のみ、酸化絶縁層３ａ，３ｂ，３ｃが残され、それ以外の部分で絶縁層が除去される。 As a result, the oxidation insulating layers 3a, 3b and 3c are left only between the support conducting portions 12, 14, 17 and 19 and the frame layer 25 and the surface 1a of the support substrate 1, and the insulating layer is otherwise Is removed.
　なお、支持基板１は、厚さ寸法が０．２～０．７ｍｍ程度、ＳＯＩ層１０の厚さ寸法は１０～３０μｍ程度、酸化絶縁層３ａ，３ｂ，３ｃの厚さは１～３μｍ程度である。 The thickness of the support substrate 1 is about 0.2 to 0.7 mm, the thickness of the SOI layer 10 is about 10 to 30 μm, and the thickness of the oxide insulating layers 3a, 3b and 3c is about 1 to 3 μm. is there.
　配線基板２を構成するシリコン基板５は、厚さ寸法が０．２～０．７ｍｍ程度で形成される。シリコン基板５の表面５ａに絶縁層３０が形成される。絶縁層３０は、ＳｉＯ2、ＳｉＮまたはＡｌ2Ｏ3などの無機絶縁層であり、スパッタ工程やＣＶＤ工程で形成される。無機絶縁層としては、シリコン基板との熱膨張係数の差が、接続金属層を構成する導電性金属とシリコン基板の熱膨張係数の差よりも小さい材料が選択される。好ましくは、シリコン基板との熱膨張係数の差が比較的小さいＳｉＯ2またはＳｉＮが使用される。 The silicon substrate 5 constituting the wiring substrate 2 is formed to have a thickness dimension of about 0.2 to 0.7 mm. Insulating layer 30 is formed on surface 5 a of silicon substrate 5. The insulating layer 30 is an inorganic insulating layer such as SiO 2, SiN, or Al 2 O 3, and is formed by a sputtering process or a CVD process. As the inorganic insulating layer, a material is selected in which the difference in thermal expansion coefficient with the silicon substrate is smaller than the difference in thermal expansion coefficients of the conductive metal forming the connection metal layer and the silicon substrate. Preferably, SiO2 or SiN having a relatively small difference in thermal expansion coefficient with the silicon substrate is used.
　図４に示すように、絶縁層３０の表面に、第１の固定電極部１１の支持導通部１２に対面する第２の接続金属層３１が形成され、同様に第２の固定電極部１３の支持導通部１４に対面する第２の接続金属層３１（図示せず）が形成される。また、絶縁層３０の表面に、可動電極部１５の一方の支持導通部１７に対面する第２の接続金属層３２が形成され、同様に、他方の支持導通部１９と対面する第２の接続金属層３２（図示せず）も形成されている。 As shown in FIG. 4, a second connection metal layer 31 is formed on the surface of the insulating layer 30 so as to face the support conducting portion 12 of the first fixed electrode portion 11. A second connection metal layer 31 (not shown) facing the support conduction portion 14 is formed. Further, the second connection metal layer 32 facing the one support conduction portion 17 of the movable electrode portion 15 is formed on the surface of the insulating layer 30, and similarly, the second connection faces the other support conduction portion 19. A metal layer 32 (not shown) is also formed.
　絶縁層３０の表面には、前記枠体層２５の表面に対向する第２のシール接続金属層３３が形成されている。この第２のシール接続金属層３３は、前記第２の接続金属層３１，３２と同じ導電性金属材料によって形成されている。第２のシール接続金属層３３は、枠体層２５に対面して四角形に形成されており、可動電極部１５の可動領域の外周でこの可動領域の周囲全周を囲むように形成されている。第２の接続金属層３１，３２および第２のシール接続金属層３３はアルミニウム（Ａｌ）で形成されている。 A second seal connection metal layer 33 facing the surface of the frame layer 25 is formed on the surface of the insulating layer 30. The second seal connection metal layer 33 is formed of the same conductive metal material as the second connection metal layers 31 and 32. The second seal connection metal layer 33 is formed in a quadrangle facing the frame layer 25 and is formed on the outer periphery of the movable region of the movable electrode portion 15 so as to surround the entire periphery of the movable region . The second connection metal layers 31 and 32 and the second seal connection metal layer 33 are formed of aluminum (Al).
　絶縁層３０の内部には、一方の第２の接続金属層３１に導通するリード層３４と、他方の第２の接続金属層３２に導通するリード層３５が設けられている。リード層３４，３５はアルミニウムで形成されている。複数のリード層３４，３５は、それぞれの第２の接続金属層３１，３２に個別に導通している。そして、それぞれのリード層３４，３５は、絶縁層３０の内部を通過し、第２のシール接続金属層３３と接触することなく、第２のシール接続金属層３３が形成されている部分を横断して、第２のシール接続金属層３３で囲まれている領域の外側へ延びている。配線基板２には、前記領域の外側において、それぞれのリード層３４，３５に導通する接続パッド３６が設けられている。接続パッド３６は、低抵抗で酸化しにくい導電性材料であるアルミニウムや金などで形成されている。 Inside the insulating layer 30, a lead layer 34 electrically connected to one of the second connection metal layers 31 and a lead layer 35 electrically connected to the other second connection metal layer 32 are provided. The lead layers 34 and 35 are formed of aluminum. The plurality of lead layers 34 and 35 respectively conduct to the respective second connection metal layers 31 and 32. The respective lead layers 34 and 35 pass through the inside of the insulating layer 30 and cross the portion where the second seal connection metal layer 33 is formed without contacting the second seal connection metal layer 33. , And extends outside the area surrounded by the second seal connection metal layer 33. The wiring board 2 is provided with connection pads 36 electrically connected to the respective lead layers 34 and 35 outside the region. The connection pad 36 is formed of aluminum, gold or the like which is a conductive material which is low in resistance and difficult to oxidize.
　絶縁層３０は、第２の接続金属層３１，３２が形成されている表面および第２のシール接続金属層３３が形成されている表面が同一平面上に位置している。そして、絶縁層３０には、第２の接続金属層３１，３２と第２のシール接続金属層３３が形成されていない領域に、シリコン基板５の表面５ａに向けて凹部３８が形成されている。この凹部３８は、絶縁層３０において、支持導通部１２，１４，１７，１９および枠体層２５に対向する前記表面以外の全ての部分に形成されている。また、凹部３８は、絶縁層３０の内部の途中までの深さであって、リード層３４，３５が露出しない深さに形成されている。 In the insulating layer 30, the surface on which the second connection metal layers 31 and 32 are formed and the surface on which the second seal connection metal layer 33 is formed are located on the same plane. Then, a recess 38 is formed in the insulating layer 30 in a region where the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are not formed, toward the surface 5 a of the silicon substrate 5. . The recess 38 is formed in the insulating layer 30 in all parts other than the surface facing the support conducting portions 12, 14, 17, 19 and the frame layer 25. In addition, the recess 38 is formed to a depth halfway to the inside of the insulating layer 30 so that the lead layers 34 and 35 are not exposed.
　図４に示すように、ＳＯＩ層１０の支持導通部１２，１４の表面には、それぞれ前記第２の接続金属層３１に対面する第１の接続金属層４１が形成され、支持導通部１７，１９の表面には、それぞれの第２の接続金属層３２に対面する第１の接続金属層４２がスパッタ工程で形成される。さらに、枠体層２５の表面には、第２のシール接続金属層３３に対面する第１のシール接続金属層４３が形成される。第１のシール接続金属層４３は、第１の接続金属層４１，４２と同じ金属材料で同時に形成される。 As shown in FIG. 4, a first connection metal layer 41 facing the second connection metal layer 31 is formed on the surfaces of the support conductive portions 12 and 14 of the SOI layer 10, respectively. A first connection metal layer 42 facing the respective second connection metal layers 32 is formed on the surface 19 by a sputtering process. Furthermore, on the surface of the frame layer 25, a first seal connection metal layer 43 facing the second seal connection metal layer 33 is formed. The first seal connection metal layer 43 is simultaneously formed of the same metal material as the first connection metal layers 41 and 42.
　第１の接続金属層４１，４２と第１のシール接続金属層４３は、第２の接続金属層３１，３２および第２のシール接続金属層３３を形成するアルミニウムと共晶接合あるいは拡散接合しやすい金属材料であるＧｅ（ゲルマニウム）で形成されている。 The first connection metal layers 41 and 42 and the first seal connection metal layer 43 are eutectic or diffusion bonded to aluminum forming the second connection metal layers 31 and 32 and the second seal connection metal layer 33. It is formed of Ge (germanium) which is a easy metal material.
　図４に示すように、第２の接続金属層３１と第１の接続金属層４１とを対面させ、第２の接続金属層３２と第１の接続金属層４２とを対面させ、さらに第２のシール接続金属層３３と第１のシール接続金属層４３とを対面させる。そして、加熱しながら支持基板１とシリコン基板５間を加圧する。これにより、第２の接続金属層３１と第１の接続金属層４１とが共晶接合あるいは拡散接合し、第２の接続金属層３２と第１の接続金属層４２とが共晶接合あるいは拡散接合する。第２の接続金属層３１，３２と第１の接続金属層４１，４２との共晶接合あるいは拡散接合により、支持導通部１２，１４，１７，１９が酸化絶縁層３ａ，３ｂと絶縁層３０との間で動かないように挟持されるとともに、第２の接続金属層３１，３１と支持導通部１２，１４とが個別に導通し、第２の接続金属層３２，３２と支持導通部１７，１９とが個別に導通する。 As shown in FIG. 4, the second connection metal layer 31 and the first connection metal layer 41 are made to face each other, the second connection metal layer 32 and the first connection metal layer 42 are made to face each other, and the second And the first seal connection metal layer 43 face each other. Then, the space between the support substrate 1 and the silicon substrate 5 is pressurized while heating. Thereby, the second connection metal layer 31 and the first connection metal layer 41 are subjected to eutectic bonding or diffusion bonding, and the second connection metal layer 32 and the first connection metal layer 42 are subjected to eutectic bonding or diffusion. Join. By conducting eutectic bonding or diffusion bonding between the second connection metal layers 31 and 32 and the first connection metal layers 41 and 42, the supporting conductive portions 12, 14, 17 and 19 become the oxide insulating layers 3a and 3b and the insulating layer 30. Between the second connection metal layers 31 and 31 and the support conduction portions 12 and 14 separately, and the second connection metal layers 32 and 32 and the support conduction portions 17 , 19 individually conduct.
　同時に、第２のシール接続金属層３３と第１のシール接続金属層４３とが共晶接合あるいは拡散接合する。この接合により、枠体層２５と絶縁層３０とが強固に固定されるとともに、可動電極部１５の可動領域の周囲全周を囲む金属シール層４５が形成される。 At the same time, the second seal connection metal layer 33 and the first seal connection metal layer 43 are eutectically bonded or diffusion bonded. By this bonding, the frame layer 25 and the insulating layer 30 are firmly fixed, and the metal seal layer 45 surrounding the entire periphery of the movable region of the movable electrode portion 15 is formed.
　図５は、支持導通部１２の付近を拡大して示した部分拡大断面図である。図５は図４の上下を逆にして示した。 FIG. 5 is a partially enlarged cross-sectional view showing the vicinity of the support conducting portion 12 in an enlarged manner. FIG. 5 is shown upside down in FIG.
　図５，図６（図５の部分平面図）に示すように、支持導通部（接合層）１２と支持基板１との間に介在する酸化絶縁層３ａの幅寸法Ｔ１０は、支持導通部１２の幅寸法Ｔ１１よりも狭い。なおこの実施形態では、支持導通部１２及び酸化絶縁層３ａの平面形状が略正方形であるとして、Ｘ１－Ｘ２方向及びそれに直交するＹ１－Ｙ２方向への幅寸法が略同一であるとする。 As shown in FIGS. 5 and 6 (partial plan view of FIG. 5), the width dimension T10 of the oxide insulating layer 3a interposed between the support conductive portion (bonding layer) 12 and the support substrate 1 is the support conductive portion 12 Narrower than the width dimension T11 of In this embodiment, assuming that the planar shape of the support conducting portion 12 and the oxide insulating layer 3a is substantially square, it is assumed that the width dimension in the X1-X2 direction and the Y1-Y2 direction orthogonal thereto is substantially the same.
　図５，図６に示すように、酸化絶縁層３ａは、支持導通部１２の真下の略中央に形成される。このため、支持導通部１２の外周部１２ａの下面には支持基板１との間に酸化絶縁層が無い空洞部９が形成されている。 As shown in FIGS. 5 and 6, the oxide insulating layer 3 a is formed substantially at the center of the bottom of the support conducting portion 12. For this reason, a hollow portion 9 having no oxidation insulating layer between the support substrate 1 and the lower surface of the outer peripheral portion 12 a of the support conducting portion 12 is formed.
　このように、空洞部９が形成される理由は、製造過程において、不要なＳＯＩ層１０が除去されて露出した不要な酸化絶縁層３ａをエッチングで除去するとき、オーバーエッチングによって、支持導通部１２の外周部１２ａ下にある酸化絶縁層までも除去されてしまうからである。 Thus, the reason why the cavity 9 is formed is that, when the unnecessary oxide insulating layer 3a exposed by removing the unnecessary SOI layer 10 is removed by etching in the manufacturing process, the support conductor 12 is formed by over-etching. The oxide insulating layer under the outer peripheral portion 12a of the above is also removed.
　本実施形態では、図５，図６に示すように、支持導通部１２の表面１２ｂに形成される第１の接続金属層４１の幅寸法Ｔ１２が、酸化絶縁層３ａの幅寸法Ｔ１０以下で形成される。図５，図６では、第１の接続金属層４１の幅寸法Ｔ１２は、酸化絶縁層３ａの幅寸法Ｔ１０よりも小さく形成されている。このため図６のように平面視で、第１の接続金属層４１の全体を酸化絶縁層３ａ内に重ねることができる。すなわち平面視にて、第１の接続金属層４１が、酸化絶縁層３ａからＸ１－Ｘ２方向あるいはＹ１－Ｙ２方向にはみ出さない。 In the present embodiment, as shown in FIGS. 5 and 6, the width dimension T12 of the first connection metal layer 41 formed on the surface 12b of the support conducting portion 12 is formed with the width dimension T10 or less of the oxide insulating layer 3a. Be done. In FIGS. 5 and 6, the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a. Therefore, in plan view as shown in FIG. 6, the entire first connection metal layer 41 can be overlapped in the oxide insulating layer 3a. That is, the first connection metal layer 41 does not protrude in the X1-X2 direction or the Y1-Y2 direction from the oxide insulating layer 3a in a plan view.
　一方、図５の実施形態では、配線基板２側に配置される第２の接続金属層３１の幅寸法Ｔ１３は、酸化絶縁層３ａの幅寸法Ｔ１０より大きくなっている。 On the other hand, in the embodiment of FIG. 5, the width dimension T13 of the second connection metal layer 31 disposed on the wiring board 2 side is larger than the width dimension T10 of the oxide insulating layer 3a.
　図５のように、各層の幅寸法を規定することで、第１の接続金属層４１と第２の接続金属層３１間を接合する際、加重をかけると、第１の接続金属層４１と第２の接続金属層３１間に作用する加重領域を、幅寸法が狭い第１の接続金属層４１の接合面で規制できる。そして、図５，図６の実施形態では、さらに、第１の接続金属層４１の幅寸法Ｔ１２が酸化絶縁層３ａの幅寸法Ｔ１０より小さく、平面視にて第１の接続金属層４１全体を酸化絶縁層３ａの平面内に重ねることができ、支持導通部１２の下に空洞部９がある外周部１２ａに作用する加重を効果的に低減できる。 As shown in FIG. 5, when the first connection metal layer 41 and the second connection metal layer 31 are joined by defining the width dimension of each layer, the first connection metal layer 41 and the first connection metal layer 41 The load area acting between the second connection metal layers 31 can be restricted by the joint surface of the first connection metal layer 41 having a narrow width dimension. Further, in the embodiment of FIGS. 5 and 6, the width dimension T12 of the first connection metal layer 41 is smaller than the width dimension T10 of the oxide insulating layer 3a, and the entire first connection metal layer 41 can be It is possible to overlap in the plane of the oxide insulating layer 3a, and it is possible to effectively reduce the load acting on the outer peripheral portion 12a where the cavity 9 is located below the support conduction portion 12.
　上記により、従来に比べて、第１の接続金属層４１と第２の接続金属層３１との間の接合面に均一な加重を作用させやすい。よって接合強度のばらつきを小さくでき、強く安定した接合強度を得ることが出来る。また支持導通部１２の外周部１２ａに作用する加重を低減できるので、外周部１２ａの破損等を抑制できる。 Due to the above, it is easier to apply a uniform load to the bonding surface between the first connection metal layer 41 and the second connection metal layer 31 compared to the conventional case. Therefore, the variation in bonding strength can be reduced, and a strong and stable bonding strength can be obtained. Further, since the load acting on the outer peripheral portion 12 a of the support conducting portion 12 can be reduced, the damage or the like of the outer peripheral portion 12 a can be suppressed.
　さらに、図５に示す実施形態では、第２の接続金属層３１の幅寸法Ｔ１３を第１の接続金属層４１の幅寸法より大きくしている。これにより、第１の接続金属層４１と第２の接続金属層３１間を接合するとき、多少、両者間に位置ずれが生じても、幅寸法Ｔ１２が狭い第１の接続金属層４１の全体を、幅寸法Ｔ１３が広い第２の接続金属層３１の平面内に収めやすく接合面積のばらつきを抑制できる。 Furthermore, in the embodiment shown in FIG. 5, the width dimension T13 of the second connection metal layer 31 is made larger than the width dimension of the first connection metal layer 41. Thereby, when joining between the first connection metal layer 41 and the second connection metal layer 31, the entire first connection metal layer 41 having a narrow width dimension T12 even if a positional deviation occurs to some extent. Can be easily accommodated in the plane of the second connection metal layer 31 having a wide width dimension T13, and the variation in the bonding area can be suppressed.
　以上により、支持導通部１２と配線基板２との間に、安定した接合構造を形成することが出来る。 As described above, a stable bonding structure can be formed between the support conducting portion 12 and the wiring board 2.
　図７の他の実施形態に示すように、第２の接続金属層３１の幅寸法Ｔ１４を、第１の接続金属層４１の幅寸法Ｔ１５及び酸化絶縁層３ａの幅寸法Ｔ１０より小さくしてもよい。 As shown in another embodiment of FIG. 7, even if the width dimension T14 of the second connection metal layer 31 is smaller than the width dimension T15 of the first connection metal layer 41 and the width dimension T10 of the oxide insulating layer 3a. Good.
　また図８の他の実施形態に示すように、第１の接続金属層４１及び第２の接続金属層３１の双方の幅寸法Ｔ１９を略同一にし、双方の幅寸法Ｔ１９を酸化絶縁層３ａの幅寸法Ｔ１０より小さくなるように形成してもよい。 Further, as shown in another embodiment of FIG. 8, the width dimension T19 of both the first connection metal layer 41 and the second connection metal layer 31 is made substantially the same, and both width dimensions T19 of the oxide insulating layer 3a are made equal. You may form so that it may become smaller than width dimension T10.
　図９に示す他の実施形態では、第２の接続金属層３１の略中央に凹領域３１ａが形成されている。凹領域３１ａは、絶縁層３０にリード層の表面が露出する深さの凹部を形成し、この凹部に倣うようにスパッタ等で第２の接続金属層３１を成膜することで形成される。かかる形態における第２の接続金属層３１の幅寸法Ｔ１６は、両端部３１ｂ，３１ｂ間の直線幅である。第２の接続金属層３１に形成された凹領域３１ａは未接合領域であるので接合面積の減少を抑制するには、凹領域３１ａが小さくなるように第２の接続金属層３１を形成することが好適である。 In another embodiment shown in FIG. 9, a recessed area 31 a is formed substantially at the center of the second connection metal layer 31. The recessed region 31a is formed by forming a recess having a depth to which the surface of the lead layer is exposed in the insulating layer 30, and forming the second connection metal layer 31 by sputtering or the like so as to follow the recess. Width dimension T16 of the 2nd connection metal layer 31 in this form is a straight line width between both ends 31b and 31b. Since the recessed area 31a formed in the second connection metal layer 31 is a non-joined area, in order to suppress a decrease in the bonding area, the second connection metal layer 31 is formed so that the recessed area 31a becomes smaller. Is preferred.
　あるいは図９の点線で示すように第２の接続金属層３１の凹領域３１ａを第１の接続金属層４１と対向しないようにずらし、凹領域３１ａの一方端から長く延びる接続領域３１ｃを形成して、平坦な接続領域３１ｃと同じく平坦な第１の接続金属層４１とが接合される構造であると、なお良い。このときの第２の接続金属層３１の幅寸法は、平坦な接続領域３１ｃの幅寸法で定義される。 Alternatively, concave region 31a of second connection metal layer 31 is shifted so as not to face first connection metal layer 41 as shown by a dotted line in FIG. 9, to form connection region 31c extending long from one end of concave region 31a. It is more preferable that the flat connection region 31c and the flat first connection metal layer 41 be joined together. The width dimension of the second connection metal layer 31 at this time is defined by the width dimension of the flat connection region 31 c.
　図１０に示す他の実施形態では、第１の接続金属層４１の幅寸法Ｔ１７は、第２の接続金属層３１の幅寸法Ｔ１８より小さく形成されるが、酸化絶縁層３ａの幅寸法Ｔ１０に比べてやや広い。 In another embodiment shown in FIG. 10, the width dimension T17 of the first connection metal layer 41 is smaller than the width dimension T18 of the second connection metal layer 31, but the width dimension T10 of the oxide insulating layer 3a Slightly wider than.
　ただし図１０の形態であっても、第１の接続金属層４１と第２の接続金属層３１間に作用する加重領域を、幅寸法Ｔ１７が狭い第１の接続金属層４１の接合面で規制できる。よって、第１の接続金属層４１及び第２の接続金属層３１の双方の幅寸法を同じように大きく形成した従来構造に比べて、支持導通部１２の外周部１２ａに作用する加重を従来に比べて低減できる。 However, even in the embodiment of FIG. 10, the load area acting between the first connection metal layer 41 and the second connection metal layer 31 is restricted by the bonding surface of the first connection metal layer 41 having a narrow width dimension T17. it can. Therefore, compared with the conventional structure in which the width dimensions of both of the first connection metal layer 41 and the second connection metal layer 31 are equally large, the weight acting on the outer peripheral portion 12a of the support conductive portion 12 is conventionally It can be reduced compared with that.
　また、第１の接続金属層４１と第２の接続金属層３１の幅寸法に差をつけることで、幅寸法Ｔ１７が狭くされた第１の接続金属層４１が、幅寸法Ｔ１８が広い第２の接続金属層３１の内に収まるように、位置合わせを高精度に行うことが出来、接合強度のばらつきを小さくすることができる。 Further, by making the width dimensions of the first connection metal layer 41 and the second connection metal layer 31 different from each other, the first connection metal layer 41 whose width dimension T17 is narrowed has a wide width dimension T18. The alignment can be performed with high accuracy so as to be contained in the connection metal layer 31 and the variation in the bonding strength can be reduced.
　上記では支持導通部１２の接合構造について説明したが、他の支持導通部１４，１７，１９についても同様の接合構造となっている。 Although the bonding structure of the support conducting portion 12 has been described above, the same bonding structure is also applied to the other support conducting portions 14, 17 and 19.
　また図４の実施形態では、枠体層２５と支持基板１との間に介在する酸化絶縁層３ｃも、枠体層２５の幅寸法より小さくなる。よって、第１のシール接続金属層４３と第２のシール接続金属層３３との幅寸法も、第１の接続金属層４１，４２と第２の接続金属層３１，３２との幅寸法と同様の関係を満たしていることが強固な金属シール層４５を形成でき、シール性を向上させることができて好適である。 Further, in the embodiment of FIG. 4, the oxide insulating layer 3 c interposed between the frame layer 25 and the support substrate 1 is also smaller than the width dimension of the frame layer 25. Therefore, the width dimensions of the first seal connection metal layer 43 and the second seal connection metal layer 33 are also the same as the width dimensions of the first connection metal layers 41 and 42 and the second connection metal layers 31 and 32. It is preferable that the metal seal layer 45 that is strong can be formed and the sealability can be improved.
　なお、第１のシール接続金属層４３と第２のシール接続金属層３３との接合による金属シール層４５が形成されない形態では、支持導通部１２，１４，１７，１９の接合構造の幅寸法のみを規制すればよい。また、一部の支持導通部の接合構造の幅寸法のみ規制する形態でもよい。あるいは、シール性を高める観点から、上記した幅寸法関係を、金属シール層４５だけに規制することもあり得る。ただし図４のように、全ての支持導通部の接合構造と金属シール層４５の双方に上記した幅寸法関係を規制することが最も好適である。 In the embodiment where the metal seal layer 45 is not formed by bonding the first seal connection metal layer 43 and the second seal connection metal layer 33, only the width dimension of the bonding structure of the support conductive portions 12, 14, 17, 19 Should be regulated. Further, only the width dimension of the joint structure of a part of the supporting and conducting parts may be regulated. Alternatively, the above-described width dimension relationship may be restricted to only the metal seal layer 45 from the viewpoint of enhancing the sealability. However, as shown in FIG. 4, it is most preferable to restrict the above-described width dimension relationship to both the joint structure of all the supporting and conducting parts and the metal seal layer 45.
　上記したＭＥＭＳセンサは、ＳＯＩ基板と配線基板２を重ねた構造であり、全体に薄型である。 The MEMS sensor described above has a structure in which the SOI substrate and the wiring substrate 2 are stacked, and is thin as a whole.
　また、支持導通部１２，１４，１７，１９が配線基板２に、第２の接続金属層３１，３２と第１の接続金属層４１，４２との共晶接合あるいは拡散接合で接合されているが、この接合層は薄く且つ面積が小さく、しかも支持導通部１２，１４，１７，１９と支持基板１とが無機絶縁材料の酸化絶縁層３ａ，３ｂを介して接合されている。そのため、周囲温度が高くなったとしても、接合層の熱応力が支持導通部１２，１４，１７，１９の支持構造に影響を与えにくく、熱応力による固定電極部１１，１３や可動電極部１５の歪みなどが発生しにくい。 In addition, the support conducting portions 12, 14, 17, 19 are joined to the wiring substrate 2 by eutectic bonding or diffusion bonding of the second connection metal layers 31, 32 and the first connection metal layers 41, 42. However, this bonding layer is thin and small in area, and the support conducting portions 12, 14, 17, 19 and the support substrate 1 are bonded through the oxide insulating layers 3a and 3b of the inorganic insulating material. Therefore, even if the ambient temperature rises, the thermal stress of the bonding layer hardly affects the support structure of the support conducting portions 12, 14, 17 and 19, and the fixed electrode portions 11 and 13 and the movable electrode portion 15 due to the thermal stress. Distortion and the like are unlikely to occur.
　同様に、可動電極部１５の可動領域の周囲を囲む金属シール層４５は、枠体層２５と絶縁層３０との間で薄く形成された接合層であり、枠体層２５が十分な厚み寸法を有しているため、金属シール層４５の熱応力によって、シリコンで形成された支持基板１やシリコン基板５に歪みなどが発生しにくい。 Similarly, the metal seal layer 45 surrounding the periphery of the movable region of the movable electrode portion 15 is a bonding layer formed thin between the frame layer 25 and the insulating layer 30, and the frame layer 25 has a sufficient thickness dimension Because of the thermal stress of the metal seal layer 45, distortion and the like are less likely to occur in the support substrate 1 and the silicon substrate 5 made of silicon.
　このＭＥＭＳセンサは、支持基板１とシリコン基板５の厚さ寸法、およびＳＯＩ層１０の厚さ寸法、さらに絶縁層３０の厚さ寸法によって、全体の厚さ寸法がほぼ決められる。それぞれの層の厚さ寸法は、高精度に管理できるため、厚さのばらつきが生じにくくなる。しかも、絶縁層３０には、可動電極部１５の可動領域に対向する凹部３８が形成されているため、全体が薄型であっても、可動電極部１５に厚さ方向の移動余裕（マージン）を与えることができ、外部から厚さ方向への大きな加速度が作用しても、錘部２０および可動対向電極２０ａ，２０ｂ，２０ｃ，２０ｄが絶縁層３０に当たりにくく、誤動作を生じにくい。 The overall thickness of the MEMS sensor is substantially determined by the thickness of the support substrate 1 and the silicon substrate 5, the thickness of the SOI layer 10, and the thickness of the insulating layer 30. The thickness dimensions of the respective layers can be managed with high accuracy, so that variations in thickness are less likely to occur. Moreover, since the recess 38 facing the movable region of the movable electrode portion 15 is formed in the insulating layer 30, the movable electrode portion 15 has a movement margin (margin) in the thickness direction even if the whole is thin. Even if a large acceleration acts in the thickness direction from the outside, the weight 20 and the movable counter electrodes 20a, 20b, 20c, and 20d hardly hit the insulating layer 30, and malfunction does not easily occur.
　また図４に示す実施形態では、配線基板２は、シリコン基板５と、シリコン基板５の表面５ａに、絶縁層３０とリード層３４，３５と第２の接続金属層３１とを有して構成される。したがって後述する図１２のようにシリコン基板に貫通する貫通配線を用いて支持導通部との導通経路を確保する形態に比べて、簡単な構造で薄型化を実現できる。 Further, in the embodiment shown in FIG. 4, the wiring substrate 2 is configured to have the silicon substrate 5 and the surface 5 a of the silicon substrate 5 including the insulating layer 30, the lead layers 34 and 35, and the second connection metal layer 31. Be done. Therefore, as shown in FIG. 12 which will be described later, the thinning can be realized with a simple structure as compared with the form in which the conduction path to the support conduction portion is secured using the through wiring penetrating to the silicon substrate.
　このＭＥＭＳセンサは、Ｙ１方向またはＹ２方向の加速度を検知する加速度センサとして使用することができる。例えば、ＭＥＭＳセンサにＹ１方向への加速度が作用すると、その反作用により可動電極部１５の錘部２０がＹ２方向へ移動する。このとき、図２に示す、可動対向電極２０ｂと固定側の対向電極１１ｃとの対向距離δ１が広がって、可動対向電極２０ｂと対向電極１１ｃとの間の静電容量が低下する。同時に、図３に示す、可動対向電極２０ｄと対向電極１３ｃとの対向距離δ２が狭くなって、可動対向電極２０ｂと対向電極１３ｃとの間の静電容量が増大する。 The MEMS sensor can be used as an acceleration sensor that detects an acceleration in the Y1 direction or the Y2 direction. For example, when acceleration in the Y1 direction acts on the MEMS sensor, the reaction causes the weight 20 of the movable electrode 15 to move in the Y2 direction. At this time, an opposing distance δ1 between the movable counter electrode 20b and the fixed side counter electrode 11c shown in FIG. 2 is increased, and the capacitance between the movable counter electrode 20b and the counter electrode 11c is reduced. At the same time, the opposing distance δ2 between the movable counter electrode 20d and the counter electrode 13c shown in FIG. 3 is narrowed, and the capacitance between the movable counter electrode 20b and the counter electrode 13c is increased.
　静電容量の減少と増大を電気回路で検出し、対向距離δ１の増大による出力の変化と対向距離δ２の減小による出力の変化との差を求めることにより、Ｙ１方向へ作用した加速度の変化や加速度の大きさを検知することができる。 Change in acceleration acting in the Y1 direction by detecting the decrease and increase in capacitance with an electric circuit and finding the difference between the change in output due to the increase in facing distance δ1 and the change in output due to the decrease in facing distance δ2. And the magnitude of acceleration can be detected.
　なお、本発明は、可動電極部１５の錘部２０が、Ｘ－Ｙ平面と直交する向きの加速度に反応して厚さ方向へ移動して、固定電極部１１，１３の対向電極１１ｂ，１１ｃ，１３ｂ，１３ｃと、可動電極部１５の可動対向電極２０ａ，２０ｂ，２０ｃとの対向状態が、可動電極部１５の厚さ方向へずれて、対向面積が変化し、このときの可動対向電極と対向電極との間の静電容量の変化を検知するものであってもよい。 In the present invention, the weight portion 20 of the movable electrode portion 15 moves in the thickness direction in response to the acceleration in the direction orthogonal to the XY plane, and the counter electrodes 11b and 11c of the fixed electrode portions 11 and 13 move. , 13b, 13c and the movable counter electrodes 20a, 20b, 20c of the movable electrode section 15 are shifted in the thickness direction of the movable electrode section 15, changing the counter area, and the movable counter electrodes at this time It may be one that detects a change in electrostatic capacitance with the counter electrode.
　なお、前記実施の形態では、第２の接続金属層３１，３２および第２のシール接続金属層３３がアルミニウムで、第１の接続金属層４１，４２および第１のシール接続金属層４３がＧｅであるが、共晶接合あるいは拡散接合が可能な金属の組み合わせとしては、Ａｌ（アルミニウム）－Ｚｎ（亜鉛）、Ａｕ（金）－Ｓｉ（シリコン）、Ａｕ（金）Ｉｎ（－インジウム）、Ａｕ（金）－Ｇｅ（ゲルマニウム）、Ａｕ（金）－Ｓｎ（錫）などがある。これら金属の組み合わせにより、それぞれの金属の融点以下の温度である４５０℃以下の比較的低い温度で接合を行うことが可能になる。 In the above embodiment, the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are aluminum, and the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are Ge. However, as combinations of metals capable of eutectic bonding or diffusion bonding, Al (aluminum) -Zn (zinc), Au (gold) -Si (silicon), Au (gold) In (gold), Au (gold) There are (gold) -Ge (germanium), Au (gold) -Sn (tin) and the like. The combination of these metals makes it possible to perform bonding at a relatively low temperature of 450 ° C. or less, which is a temperature below the melting point of each metal.
　図１１は、さらに他の実施の形態のＭＥＭＳセンサを示す断面図である。
　このＭＥＭＳセンサは、シリコン基板５の代わりにＩＣパッケージ１００が使用されている。ＩＣパッケージ１００内には、対向電極と可動対向電極との静電容量の変化を検出する検出回路などが内蔵されている。 FIG. 11 is a cross-sectional view showing a MEMS sensor according to still another embodiment.
In this MEMS sensor, an IC package 100 is used instead of the silicon substrate 5. In the IC package 100, a detection circuit for detecting a change in electrostatic capacitance between the counter electrode and the movable counter electrode is incorporated.
　ＩＣパッケージ１００の上面１０１に絶縁層３０が形成され、この絶縁層３０の表面に、第２の接続金属層３１，３２および第２のシール接続金属層３３が形成されている。第２の接続金属層３１，３２は、絶縁層３０を貫通するスルーホールなどの接続層１３４，１３５を介して、ＩＣパッケージ１００の上面１０１に現れている電極パッドなどに導通し、ＩＣパッケージ１００内の電気回路に接続されている。 An insulating layer 30 is formed on the top surface 101 of the IC package 100, and second connection metal layers 31 and 32 and a second seal connection metal layer 33 are formed on the surface of the insulating layer 30. The second connection metal layers 31 and 32 are electrically connected to the electrode pads and the like appearing on the upper surface 101 of the IC package 100 through the connection layers 134 and 135 such as through holes penetrating the insulating layer 30. It is connected to the electric circuit inside.
　図１１に示すＭＥＭＳセンサも、接合層（支持導通部１２，１４，１７，１９や枠体層２５）の接合構造の幅寸法関係を図５～図１０に示したいずれかに規制されているので、第１の接続金属層と、第２の接続金属層間の接合面に、従来に比べて均一な加重を作用させやすく、また接合層の外周部の破損を抑制できる等、安定した接合構造を得ることが出来る。 Also in the MEMS sensor shown in FIG. 11, the width dimension relationship of the bonding structure of the bonding layers (supporting conductive portions 12, 14, 17, 19 and the frame layer 25) is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
　図１２は、さらに他の実施の形態のＭＥＭＳセンサを示す断面図である。
　図１２に示す実施形態では、配線基板２６を構成するシリコン基板２７に貫通する同じくシリコンで形成された貫通配線層２８が設けられている。貫通配線層２８とシリコン基板２７の間は絶縁層２９にて絶縁されている。図１２に示すように貫通配線層２８に接してＳＯＩ層１０と対向するシリコン基板２７の表面２７ａに第２の接続金属層３１，３２が形成されている。また絶縁層２９は、シリコン基板２７のＳＯＩ層１０との対向面と反対面２７ｂを覆い、図１２に示すように、絶縁層２９の内部には、貫通配線層２８に接するリード層３７が形成されている。 FIG. 12 is a cross-sectional view showing a MEMS sensor of still another embodiment.
In the embodiment shown in FIG. 12, a through wiring layer 28 which is also made of silicon and which penetrates the silicon substrate 27 constituting the wiring substrate 26 is provided. An insulating layer 29 insulates between the through wiring layer 28 and the silicon substrate 27. As shown in FIG. 12, second connection metal layers 31 and 32 are formed on the surface 27 a of the silicon substrate 27 facing the SOI layer 10 in contact with the through wiring layer 28. Further, the insulating layer 29 covers the surface 27b opposite to the surface facing the SOI layer 10 of the silicon substrate 27, and as shown in FIG. 12, the lead layer 37 in contact with the through wiring layer 28 is formed inside the insulating layer 29. It is done.
　図１２に示すＭＥＭＳセンサも、接合層（支持導通部１２，１４，１７，１９や枠体層２５）の接合構造の幅寸法関係を図５～図１０に示したいずれかに規制されているので、第１の接続金属層と、第２の接続金属層間の接合面に、従来に比べて均一な加重を作用させやすく、また接合層の外周部の破損を抑制できる等、安定した接合構造を得ることが出来る。 Also in the MEMS sensor shown in FIG. 12, the width dimension relationship of the bonding structure of the bonding layers (supporting conductive portions 12, 14, 17, 19 and the frame layer 25) is restricted to any of those shown in FIGS. Therefore, it is easier to apply a uniform load to the junction surface between the first connection metal layer and the second connection metal layer than in the conventional case, and it is possible to suppress the breakage of the outer peripheral portion of the junction layer. You can get
　次に、金属シール層の好ましい形態について説明する。
　図１３は、金属シール層の好ましい形態を模式的に示したものであり（ａ）は、接合前の状態を示す縦断面図、（ｂ）は、接合後の状態を示す縦断面図である。 Next, a preferred embodiment of the metal seal layer will be described.
FIG. 13 schematically shows a preferred embodiment of the metal seal layer, in which (a) is a longitudinal sectional view showing a state before joining, and (b) is a longitudinal sectional view showing a state after joining .
　図１３（ａ）に示すように、ＭＥＭＳセンサは、例えばシリコンで形成された下側基板５０と、上側基板５２と、前記下側基板５０の上面に形成された下側接続金属層５１と、前記上側基板５２に形成された上側接続金属層５３とを有して構成される。 As shown in FIG. 13A, the MEMS sensor includes, for example, a lower substrate 50 formed of silicon, an upper substrate 52, and a lower connection metal layer 51 formed on the upper surface of the lower substrate 50; And the upper connection metal layer 53 formed on the upper substrate 52.
　図１３（ａ）に示すように上側接続金属層５３の幅寸法Ｔ２０は、下側接続金属層５１の幅寸法Ｔ２１よりも小さく形成されている。 As shown in FIG. 13A, the width dimension T20 of the upper connection metal layer 53 is smaller than the width dimension T21 of the lower connection metal layer 51.
　また図１３（ａ）に示すように下側接続金属層（幅広接続金属層）５１の接合面５１ａは平坦面であるが、上側接続金属層（幅狭接続金属層）５３の接合面５３ａは凹凸形状で形成されている。 Further, as shown in FIG. 13A, the bonding surface 51a of the lower connection metal layer (wide connection metal layer) 51 is a flat surface, but the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) is It is formed in the uneven shape.
　図１３（ａ）の実施形態では、上側接続金属層５３の接合面５３ａに形成された凸部５４は、先細り形状で形成されている。凸部５４は、接合面５３ａに、ドット状に複数、点在して形成されてもよいし、あるいは凸条形状で形成されてもよい。 In the embodiment of FIG. 13A, the convex portion 54 formed on the bonding surface 53a of the upper connection metal layer 53 is formed in a tapered shape. The convex portions 54 may be formed in a dot shape on the bonding surface 53 a in a dotted manner, or may be formed in a convex shape.
　また、上側接続金属層（幅狭接続金属層）５３は、下側接続金属層（幅広接続金属層）５１よりも接合時の硬度が高い金属材料で形成されている。上側接続金属層５３は例えばＧｅを有する層、特に、Ｇｅ層で形成されることが好ましい。また下側接続金属層５１は、例えばＡｌを有する層、特に、Ａｌ層あるいはＡｌＣｕ層で形成されることが好ましい。 Further, the upper connection metal layer (narrow connection metal layer) 53 is formed of a metal material having a higher hardness at the time of bonding than the lower connection metal layer (wide connection metal layer) 51. The upper connection metal layer 53 is preferably formed of, for example, a layer having Ge, in particular, a Ge layer. The lower connection metal layer 51 is preferably formed of, for example, a layer containing Al, in particular, an Al layer or an AlCu layer.
　そして、共晶反応を始める温度まで昇温するとともに、下側基板５０と上側基板５２間に圧力を加える。 Then, the temperature is raised to a temperature at which the eutectic reaction starts, and pressure is applied between the lower substrate 50 and the upper substrate 52.
　図１４は、図１３（ａ）と異なって、上側接続金属層（幅狭接続金属層）５３の接合面５３ａを凹凸面とせず平坦面で形成した場合の比較例を示す。 FIG. 14 shows a comparative example in which the bonding surface 53a of the upper connection metal layer (narrow connection metal layer) 53 is formed as a flat surface without being an uneven surface, unlike FIG. 13A.
　図１４に示すように、下側接続金属層５１と上側接続金属層５３間に圧力を加え、各接合面５１ａ，５３ａ間で反応させるとき、自然酸化膜や汚れ等で反応しにくい部分がボイド５５や未接合領域５６として残りやすくなる。このため接合強度及び封止気密性の低下を招きやすい問題があった。 As shown in FIG. 14, when pressure is applied between the lower connection metal layer 51 and the upper connection metal layer 53 to cause a reaction between the bonding surfaces 51 a and 53 a, the portion which is hard to react due to a natural oxide film or dirt is a void. It becomes easy to remain as 55 and unjoined area 56. For this reason, there existed a problem which was easy to cause the fall of joint strength and sealing airtightness.
　そこで、図１３（ａ）に示す構造とすることで、下側基板５０と上側基板５２間に圧力を加えたとき、図１３（ｂ）に示すように、接合面５３ａが凹凸面で形成された上側接続金属層５３の凸部５４が、接合初期時に高い圧力により、下側接続金属層５１内にほとんど変形することなく食い込むとともに、下側接続金属層５１は接合面５３ａの凹凸形状に倣って変形し、その結果、図１３（ｂ）に示す接合界面において、図１４に示すボイド５５や未接合領域５６が形成されるのを効果的に抑制できる。図１３（ｂ）に示すように、下側接続金属層５３と上側接続金属層５３との界面は密着した状態になる。したがって、図１４に示す構成に比べて、接合強度及び封止気密性の向上を図ることが出来る。 Therefore, by using the structure shown in FIG. 13A, when pressure is applied between the lower substrate 50 and the upper substrate 52, as shown in FIG. 13B, the bonding surface 53a is formed with an uneven surface. While the convex portion 54 of the upper connection metal layer 53 bites into the lower connection metal layer 51 without any deformation due to high pressure at the initial stage of bonding, the lower connection metal layer 51 follows the uneven shape of the bonding surface 53a. As a result, formation of the void 55 and the unbonded region 56 shown in FIG. 14 at the bonded interface shown in FIG. 13B can be effectively suppressed. As shown in FIG. 13B, the interface between the lower connection metal layer 53 and the upper connection metal layer 53 is in close contact. Therefore, as compared with the configuration shown in FIG. 14, the bonding strength and the sealing airtightness can be improved.
　また図１３（ｂ）に示す構成では、接合面５３ａを凹凸面で形成したことで、図１３（ｂ）のように下側接続金属層５１の接合面５１ａがほぼ、上側接続金属層５３の接合面５３ａに倣って変形するところまで進むと、図１４のように平面同士を接合する形態に比べて接合面積を大きくでき、接続金属層５１，５３の接合面に加わる単位面積あたりの接合圧力は低下する。このため上側接続金属層（幅狭接続金属層）５３が必要以上に下側接続金属層（幅広接続金属層）５１内に押し込まれるのを抑制でき、ストッパ的な機能を発揮させることが出来る。 Further, in the configuration shown in FIG. 13B, since the bonding surface 53a is formed as an uneven surface, the bonding surface 51a of the lower connection metal layer 51 is almost the same as that of the upper connection metal layer 53 as shown in FIG. When proceeding to the point where deformation follows the bonding surface 53a, the bonding area can be made larger than in the configuration in which the flat surfaces are bonded as shown in FIG. 14, and the bonding pressure per unit area applied to the bonding surfaces of the connecting metal layers 51 and 53. Declines. Therefore, the upper connection metal layer (narrow connection metal layer) 53 can be suppressed from being pushed into the lower connection metal layer (wide connection metal layer) 51 more than necessary, and a stopper function can be exhibited.
　なお図１３に示すように幅寸法が狭い側の接続金属層５３の接合面５３ａを凹凸面で形成することが好ましい。逆にしても、図１４の場合に比べて接合強度及び封止気密性の向上には効果があるが、幅広の接続金属層５１の接合面５１ａに、幅狭の接続金属層５３の凹凸面（接合面５３ａ）を押し付けるほうが、前記凹凸面の全体に他方の接続金属層５１を密着させることができ、接合強度の向上をより効果的に図ることが可能である。 In addition, as shown in FIG. 13, it is preferable to form the joint surface 53a of the connection metal layer 53 on the side where the width dimension is narrow by an uneven surface. Even if it is reversed, it is effective in improving the bonding strength and sealing air tightness as compared with the case of FIG. 14, but the uneven surface of the narrow connecting metal layer 53 on the bonding surface 51a of the wide connecting metal layer 51. By pressing (bonding surface 53a), the other connection metal layer 51 can be closely attached to the whole of the uneven surface, and the bonding strength can be more effectively improved.
　続いて図１５は、凹凸形状の接合面を有する接続金属層の製造方法を示す工程図（縦断面図）である。 Then, FIG. 15 is process drawing (longitudinal sectional view) which shows the manufacturing method of the connection metal layer which has a joining surface of uneven | corrugated shape.
　図１５（ａ）の工程では、基板５７上に接続金属層５８を形成する。接続金属層５８を例えばＧｅ層で形成する。 In the process of FIG. 15A, the connection metal layer 58 is formed on the substrate 57. The connection metal layer 58 is formed of, for example, a Ge layer.
　次に図１５（ｂ）の工程では、接続金属層５８の表面５８ａにマスク層５９を部分的に形成する。前記マスク層５９を前記表面５８ａに形成される凸部６０（図１５（ｃ）（ｄ）参照）の位置に設けるが凸部６０の最小幅よりも広い幅で形成する。 Next, in the process of FIG. 15B, the mask layer 59 is partially formed on the surface 58a of the connection metal layer 58. The mask layer 59 is provided at the position of the convex portion 60 (see FIGS. 15 (c) and 15 (d)) formed on the surface 58a, but is formed with a width wider than the minimum width of the convex portion 60.
　次に図１５（ｃ）の工程では、例えばＣＦ４ガスを用いてドライエッチング（等方性エッチング）を行い、前記マスク層５９に覆われていない接続金属層５８を削り込む。このとき、マスク層５９の下側に位置する接続金属層５８の部分も削りこまれ、マスク層５９の下側に先細り形状の凸部６０が形成される。このため凸部６０の最小幅は、前記マスク層５９の幅寸法よりも小さくなる。そして図１５（ｄ）の工程では、前記マスク層５９を除去する。 Next, in the process of FIG. 15C, dry etching (isotropic etching) is performed using, for example, CF 4 gas, and the connection metal layer 58 not covered with the mask layer 59 is scraped. At this time, the portion of the connection metal layer 58 located below the mask layer 59 is also scraped into, and a tapered convex portion 60 is formed below the mask layer 59. For this reason, the minimum width of the convex portion 60 is smaller than the width dimension of the mask layer 59. Then, in the step of FIG. 15D, the mask layer 59 is removed.
　上記により接続金属層５８の表面５８ａを簡単且つ適切に凹凸形状に形成できる。
　本実施形態では、例えば図１６に示すように、下側基板５０の上面５０ａに枠状の封止ライン６２を図１３（ａ）に示すＡｌ等から成る下側接続金属層５１で形成する。 Thus, the surface 58a of the connection metal layer 58 can be easily and appropriately formed in an uneven shape.
In the present embodiment, for example, as shown in FIG. 16, a frame-like sealing line 62 is formed on the upper surface 50a of the lower substrate 50 by the lower connecting metal layer 51 made of Al or the like shown in FIG.
　また図１６に示すように、上側基板５２の下面５２ａに、枠状の封止ライン６１を図１３（ａ）に示すＧｅ等からなる上側接続金属層５３で形成する。 Further, as shown in FIG. 16, a frame-like sealing line 61 is formed on the lower surface 52a of the upper substrate 52 by the upper connection metal layer 53 made of Ge or the like shown in FIG.
　封止ライン６２，６１の縦断面の形状は図１３（ａ）に示す接続金属層５１，５３の縦断面の形状と同様である。 The shape of the vertical cross section of the sealing lines 62, 61 is the same as the shape of the vertical cross section of the connecting metal layers 51, 53 shown in FIG. 13 (a).
　そして図１６に示す上下方向から、下側基板５０と上側基板５２との間に圧力を加えると、図１３（ｂ）で説明したように、封止ライン６２，６１の接合面同士が密着して接合されて枠状の金属シール層が形成され、この結果、接合強度及び封止気密性に優れたＭＥＭＳセンサを実現できる。 Then, when pressure is applied between the lower substrate 50 and the upper substrate 52 in the vertical direction shown in FIG. 16, as described in FIG. 13B, the bonding surfaces of the sealing lines 62 and 61 are in close contact with each other. As a result, a frame-shaped metal seal layer is formed by bonding, and as a result, a MEMS sensor excellent in bonding strength and sealing airtightness can be realized.
　図１６における封止ライン６２，６１間を接合して成る金属シール層の内側の構成は特に限定されるものでないが、例えば図１７に示す構造に適用できる。 The inner configuration of the metal seal layer formed by joining the sealing lines 62 and 61 in FIG. 16 is not particularly limited, but can be applied to, for example, the structure shown in FIG.
　図１７（ａ）は、ＭＥＭＳセンサの平面図、（ｂ）は、（ａ）に示すＡ－Ａ線に沿って切断し矢印方向から見た縦断面図である。 FIG. 17 (a) is a plan view of the MEMS sensor, and FIG. 17 (b) is a longitudinal sectional view taken along the line AA shown in FIG. 17 (a) and viewed from the arrow direction.
　図１７に示す金属シール層７０は、図１６に示す封止ライン６２，６１を接合して形成されたものであり、図１３（ｂ）と同様の拡大縦断面を備えている。よって、接合強度及び封止気密性に優れるＭＥＭＳセンサを実現できる。 The metal seal layer 70 shown in FIG. 17 is formed by joining the sealing lines 62 and 61 shown in FIG. 16, and has an enlarged longitudinal cross section similar to that of FIG. 13 (b). Therefore, the MEMS sensor which is excellent in bonding strength and sealing airtightness can be realized.
　図１７に示すように、枠形状で形成された金属シール層７０よりも内側には、３つのセンサ領域７１，７２，７３がＸ１－Ｘ２に間隔を空けて並設されている。センサ領域７１では、可動体７４の動作により、Ｚ方向の加速度を検知できる。また、センサ領域７２では、可動体７５の動作により、Ｙ方向の加速度を検知でき、センサ領域７３では、可動体７６の動作により、Ｘ方向の加速度を検知できる。 As shown in FIG. 17, three sensor areas 71, 72, 73 are juxtaposed with a space X1-X2 inside the metal seal layer 70 formed in a frame shape. In the sensor area 71, the acceleration in the Z direction can be detected by the operation of the movable body 74. Further, in the sensor area 72, the acceleration in the Y direction can be detected by the operation of the movable body 75, and in the sensor area 73, the acceleration in the X direction can be detected by the operation of the movable body 76.
　あるいは図１６のＭＥＭＳセンサにおいて、封止ライン６２，６１間を接合して成る金属シール層の内側に可動体でなく他のセンサ構成がある形態にも適用できる。 Alternatively, in the MEMS sensor shown in FIG. 16, the present invention can also be applied to a form in which there is not a movable body but another sensor configuration inside the metal seal layer formed by joining the sealing lines 62 and 61.
　図１３に示した接続金属層の構成は、図５～図１０のいずれの構成にも適用できる。すなわち例えば、図５を例にとると、幅寸法Ｔ１２が幅狭で形成された第１の接続金属層（幅狭接続金属層）４１の接合面４１ａが凹凸面で形成される。また第１の接続金属層４１は、幅寸法Ｔ１３が幅広で形成された第２の接続金属層（幅広接続金属層）３１に比べて接合時における硬度が高い材質で形成される。 The configuration of the connection metal layer shown in FIG. 13 can be applied to any of the configurations shown in FIGS. That is, for example, taking FIG. 5 as an example, the bonding surface 41 a of the first connection metal layer (narrow connection metal layer) 41 formed to have a narrow width T12 is formed as an uneven surface. Further, the first connection metal layer 41 is formed of a material having higher hardness at the time of bonding as compared to the second connection metal layer (wide connection metal layer) 31 in which the width dimension T13 is formed to be wide.
　また図１８の構成においては、第１の接続金属層４１と第２の接続金属層３１のうち、接合時の硬度が高い材質で形成された側の接続金属層の接合面が凹凸面で形成される。 Further, in the configuration of FIG. 18, of the first connection metal layer 41 and the second connection metal layer 31, the bonding surface of the connection metal layer on the side formed of a material with high hardness at bonding is formed by the uneven surface. Be done.
１　支持基板
２　配線基板
３ａ，３ｂ，３ｃ　酸化絶縁層
５、２７　シリコン基板
１０　ＳＯＩ層
１１　第１の固定電極部
１１ｂ，１１ｃ　対向電極
１２　支持導通部（アンカ部）
１３　第２の固定電極部
１３ｂ，１３ｃ　対向電極
１４　支持導通部（アンカ部）
１５　可動電極部
１６　第１の支持腕部
１７　支持導通部（アンカ部）
１８　第２の支持腕部
１９　支持導通部（アンカ部）
２０　錘部
２０ａ，２０ｂ，２０ｃ，２０ｄ　可動対向電極
２１，２２，２３，２４　弾性支持部
２５　枠体層
２８　貫通配線層
２９、３０　絶縁層
３１，３２　第２の接続金属層
３３　第２のシール接続金属層
３４，３５　リード層
３８　凹部
４１，４２　第１の接続金属層
４３　第１のシール接続金属層
４５、７０　金属シール層
５０　下側基板
５１　下側接続金属層
５１ａ　接合面
５２　上側基板
５３　上側接続金属層
５３ａ　接合面（凹凸面）
５４、６０　凸部
５８　接続金属層
５９　マスク層
６１、６２　封止ライン
７１～７３　センサ領域
７４～７６　可動体
１００　ＩＣパッケージ Reference Signs List 1 support substrate 2 wiring substrate 3a, 3b, 3c oxide insulating layer 5, 27 silicon substrate 10 SOI layer 11 first fixed electrode portion 11b, 11c counter electrode 12 supporting conductive portion (anchor portion)
13 second fixed electrode portion 13b, 13c counter electrode 14 supporting conductive portion (anchor portion)
15 Movable electrode portion 16 First support arm portion 17 Support conducting portion (anchor portion)
18 Second Support Arm 19 Support Conductor (Anchor)
Reference Signs List 20 weight portion 20a, 20b, 20c, 20d movable counter electrode 21, 22, 23, 24 elastic support portion 25 frame layer 28 through wiring layer 29, 30 insulating layer 31, 32 second connection metal layer 33 second seal Connection metal layer 34, 35 Lead layer 38 Recess 41, 42 First connection metal layer 43 First seal connection metal layer 45, 70 Metal seal layer 50 Lower substrate 51 Lower connection metal layer 51a Bonding surface 52 Upper substrate 53 Upper connection metal layer 53a Bonding surface (concave / convex surface)
54, 60 convex portion 58 connection metal layer 59 mask layer 61, 62 sealing line 71 to 73 sensor region 74 to 76 movable body 100 IC package

Claims (12)

  1. 　支持基板、中間層、及び機能層の順に積層される第１の基板と、前記機能層と対向して、前記機能層に形成される可動電極部及び前記固定電極部との導通経路を備える配線基板と、を有し、
    　前記機能層には、前記中間層に固定支持されるとともに、前記配線基板と接合される接合層が形成されており、
    　前記接合層と前記支持基板間に位置する中間層の幅寸法は、前記接合層の幅寸法よりも小さく、
    　前記接合層の表面に形成された第１の接続金属層と、前記配線基板の表面に形成され前記第１の接続金属層と接合される第２の接続金属層のうち、一方の幅寸法が他方の幅寸法に比べて狭いことを特徴とするＭＥＭＳセンサ。     Wiring provided with a first substrate on which a support substrate, an intermediate layer, and a functional layer are laminated in order, a conductive path facing the functional layer, a movable electrode portion formed on the functional layer, and the fixed electrode portion And a substrate,
    A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
    The width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
    The width dimension of one of the first connection metal layer formed on the surface of the bonding layer and the second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer is the same. A MEMS sensor characterized by being narrower than the other width dimension.
  2. 　前記幅寸法が狭い側の接続金属層の前記幅寸法は、前記中間層の幅寸法以下である請求項１記載のＭＥＭＳセンサ。 The MEMS sensor according to claim 1, wherein the width dimension of the connection metal layer on the narrow side of the width dimension is equal to or less than the width dimension of the intermediate layer.
  3. 　前記幅寸法が狭い側の接続金属層の接合面が凹凸形状で形成されている請求項１又は２に記載のＭＥＭＳセンサ。 The MEMS sensor according to claim 1 or 2, wherein the bonding surface of the connection metal layer on the narrow side of the width dimension is formed in a concavo-convex shape.
  4. 　前記幅寸法が狭い側の接続金属層は、Ｇｅを有して形成され、前記幅寸法が広い接続金属層はＡｌを有して形成される請求項３記載のＭＥＭＳセンサ。 The MEMS sensor according to claim 3, wherein the connection metal layer on the narrow side of the width dimension is formed of Ge, and the connection metal layer of the wide width dimension is formed of Al.
  5. 　各接続金属層同士とが接合されて、金属シール層が形成されている請求項３又は４に記載のＭＥＭＳセンサ。 The MEMS sensor according to claim 3 or 4, wherein the connection metal layers are bonded to each other to form a metal seal layer.
  6. 　支持基板、中間層、及び機能層の順に積層される第１の基板と、前記機能層と対向して、前記機能層に形成される可動電極部及び前記固定電極部との導通経路を備える配線基板と、を有し、
    　前記機能層には、前記中間層に固定支持されるとともに、前記配線基板と接合される接合層が形成されており、
    　前記接合層と前記支持基板間に位置する中間層の幅寸法は、前記接合層の幅寸法よりも小さく、
    　前記接合層の表面に形成された第１の接続金属層と、前記配線基板の表面に形成され前記第１の接続金属層と接合される第２の接続金属層のうち、少なくとも一方の幅寸法が前記中間層の幅寸法以下であることを特徴とするＭＥＭＳセンサ。     Wiring provided with a first substrate on which a support substrate, an intermediate layer, and a functional layer are laminated in order, a conductive path facing the functional layer, a movable electrode portion formed on the functional layer, and the fixed electrode portion And a substrate,
    A bonding layer fixed to and supported by the intermediate layer and bonded to the wiring substrate is formed on the functional layer.
    The width dimension of the intermediate layer located between the bonding layer and the support substrate is smaller than the width dimension of the bonding layer,
    The width dimension of at least one of a first connection metal layer formed on the surface of the bonding layer, and a second connection metal layer formed on the surface of the wiring substrate and joined to the first connection metal layer Is less than or equal to the width dimension of the intermediate layer.
  7. 　前記接合層は、前記可動電極部及び前記固定電極部の夫々に接続される支持導通部である請求項１ないし６のいずれか１項に記載のＭＥＭＳセンサ。 The MEMS sensor according to any one of claims 1 to 6, wherein the bonding layer is a support conduction portion connected to each of the movable electrode portion and the fixed electrode portion.
  8. 　前記接合層は、前記可動電極部及び前記固定電極部と分離して形成され、前記可動電極部の可動領域を囲む枠体層であり、前記第１の接続金属層と前記第２の接続金属層とで、前記可動領域の外周を囲む金属シール層が形成されている請求項１ないし７のいずれか１項に記載のＭＥＭＳセンサ。 The bonding layer is a frame layer formed separately from the movable electrode portion and the fixed electrode portion and surrounding a movable region of the movable electrode portion, and the first connection metal layer and the second connection metal The MEMS sensor according to any one of claims 1 to 7, wherein a metal seal layer surrounding the outer periphery of the movable region is formed with the layer.
  9. 　前記第１の接続金属層と前記第２の接続金属層とが、共晶接合又は拡散接合されている請求項１ないし８のいずれか１項に記載のＭＥＭＳセンサ。 The MEMS sensor according to any one of claims 1 to 8, wherein the first connection metal layer and the second connection metal layer are eutectic bonded or diffusion bonded.
  10. 　前記配線基板は、シリコン基板と、前記シリコン基板の表面に、絶縁層とこの絶縁層の内部に埋設された前記可動電極部及び前記固定電極部の夫々に電気的に接続されるリード層と、前記第２の接続金属層と、を有して形成される請求項１ないし９のいずれか１項に記載のＭＥＭＳセンサ。 The wiring substrate includes a silicon substrate, an insulating layer on the surface of the silicon substrate, a lead layer electrically connected to each of the movable electrode portion embedded in the insulating layer and the fixed electrode portion. The MEMS sensor according to any one of claims 1 to 9, which is formed to include the second connection metal layer.
  11. 　上側基板と、前記上側基板の下面に形成された上側接続金属層と、下側基板と、前記下側基板の上面に形成された下側接続金属層と、を有し、
    　前記上側接続金属層と前記下側接続金属層とが接合されて金属シール層が形成されており、
    　前記上側接続金属層と、前記下側接続金属層とのうち、一方の幅寸法が他方の幅寸法に比べて狭いことを特徴とするＭＥＭＳセンサ。     An upper substrate, an upper connection metal layer formed on the lower surface of the upper substrate, a lower substrate, and a lower connection metal layer formed on the upper surface of the lower substrate;
    The upper connection metal layer and the lower connection metal layer are joined to form a metal seal layer,
    A MEMS sensor, wherein one width dimension of the upper connection metal layer and the lower connection metal layer is narrower than the other width dimension.
  12. 　前記幅寸法が狭い側の接続金属層の接合面が凹凸形状で形成されている請求項１１記載のＭＥＭＳセンサ。 The MEMS sensor according to claim 11, wherein the bonding surface of the connection metal layer on the narrow side of the width dimension is formed in a concavo-convex shape.
PCT/JP2009/066355 2008-09-22 2009-09-18 Mems sensor WO2010032821A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010529807A JP5222947B2 (en) 2008-09-22 2009-09-18 MEMS sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-242368 2008-09-22
JP2008242368 2008-09-22

Publications (1)

Publication Number Publication Date
WO2010032821A1 true WO2010032821A1 (en) 2010-03-25

Family

ID=42039642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/066355 WO2010032821A1 (en) 2008-09-22 2009-09-18 Mems sensor

Country Status (2)

Country Link
JP (1) JP5222947B2 (en)
WO (1) WO2010032821A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038872A (en) * 2009-08-10 2011-02-24 Alps Electric Co Ltd Mems sensor
JP2012232405A (en) * 2011-04-22 2012-11-29 Alps Electric Co Ltd Mems sensor and method for manufacturing same
WO2013163125A1 (en) * 2012-04-27 2013-10-31 Analog Devices, Inc. Method for creating asperities in metal for metal-to-metal bonding
JP2014500498A (en) * 2010-12-07 2014-01-09 アトランティック・イナーシャル・システムズ・リミテッド Accelerometer
KR101405561B1 (en) * 2012-07-19 2014-06-10 현대자동차주식회사 MEMS sensor packaging method
WO2017047663A1 (en) * 2015-09-17 2017-03-23 株式会社村田製作所 Mems device and method for producing same
EP3333579A1 (en) 2016-12-07 2018-06-13 Seiko Epson Corporation Physical quantity sensor, physical quantity sensor device, electronic apparatus, and vehicle
US10712157B2 (en) 2017-04-05 2020-07-14 Seiko Epson Corporation Physical quantity sensor, electronic device, and vehicle
CN113302833A (en) * 2019-01-16 2021-08-24 株式会社鹭宫制作所 MEMS beam structure and MEMS vibration power generation element

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09189716A (en) * 1995-11-07 1997-07-22 Temic Telefunken Microelectron Gmbh Microminiature mechanical acceleration sensor
JPH1167820A (en) * 1997-08-08 1999-03-09 Denso Corp Semiconductor device and manufacture thereof
JP2005514221A (en) * 2001-12-28 2005-05-19 コミサリヤ・ア・レネルジ・アトミク Method and zone for sealing between two microstructured substrates
WO2006101769A2 (en) * 2005-03-18 2006-09-28 Invesense Inc. Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom
WO2007061062A1 (en) * 2005-11-25 2007-05-31 Matsushita Electric Works, Ltd. Method for manufacturing wafer level package structure
WO2007078472A1 (en) * 2005-12-16 2007-07-12 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
US7276789B1 (en) * 1999-10-12 2007-10-02 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
JP2009033091A (en) * 2007-07-02 2009-02-12 Denso Corp Semiconductor device and its manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09189716A (en) * 1995-11-07 1997-07-22 Temic Telefunken Microelectron Gmbh Microminiature mechanical acceleration sensor
JPH1167820A (en) * 1997-08-08 1999-03-09 Denso Corp Semiconductor device and manufacture thereof
US7276789B1 (en) * 1999-10-12 2007-10-02 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
JP2005514221A (en) * 2001-12-28 2005-05-19 コミサリヤ・ア・レネルジ・アトミク Method and zone for sealing between two microstructured substrates
WO2006101769A2 (en) * 2005-03-18 2006-09-28 Invesense Inc. Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom
WO2007061062A1 (en) * 2005-11-25 2007-05-31 Matsushita Electric Works, Ltd. Method for manufacturing wafer level package structure
WO2007078472A1 (en) * 2005-12-16 2007-07-12 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
JP2009033091A (en) * 2007-07-02 2009-02-12 Denso Corp Semiconductor device and its manufacturing method

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038872A (en) * 2009-08-10 2011-02-24 Alps Electric Co Ltd Mems sensor
JP2014500498A (en) * 2010-12-07 2014-01-09 アトランティック・イナーシャル・システムズ・リミテッド Accelerometer
US10101357B2 (en) 2010-12-07 2018-10-16 Atlantic Inertial Systems Limited Accelerometer
JP2012232405A (en) * 2011-04-22 2012-11-29 Alps Electric Co Ltd Mems sensor and method for manufacturing same
WO2013163125A1 (en) * 2012-04-27 2013-10-31 Analog Devices, Inc. Method for creating asperities in metal for metal-to-metal bonding
KR101405561B1 (en) * 2012-07-19 2014-06-10 현대자동차주식회사 MEMS sensor packaging method
CN107848789B (en) * 2015-09-17 2020-10-27 株式会社村田制作所 MEMS device and method of manufacturing the same
WO2017047663A1 (en) * 2015-09-17 2017-03-23 株式会社村田製作所 Mems device and method for producing same
CN107848789A (en) * 2015-09-17 2018-03-27 株式会社村田制作所 MEMS device and its manufacture method
JPWO2017047663A1 (en) * 2015-09-17 2018-03-29 株式会社村田製作所 MEMS device and manufacturing method thereof
US10934161B2 (en) 2015-09-17 2021-03-02 Murata Manufacturing Co., Ltd. MEMS device and method for producing same
EP3333579A1 (en) 2016-12-07 2018-06-13 Seiko Epson Corporation Physical quantity sensor, physical quantity sensor device, electronic apparatus, and vehicle
US10830789B2 (en) 2016-12-07 2020-11-10 Seiko Epson Corporation Physical quantity sensor, physical quantity sensor device, electronic apparatus, and vehicle
US10712157B2 (en) 2017-04-05 2020-07-14 Seiko Epson Corporation Physical quantity sensor, electronic device, and vehicle
CN113302833A (en) * 2019-01-16 2021-08-24 株式会社鹭宫制作所 MEMS beam structure and MEMS vibration power generation element
CN113302833B (en) * 2019-01-16 2024-02-06 株式会社鹭宫制作所 MEMS beam structure and MEMS vibration power generation element

Also Published As

Publication number Publication date
JPWO2010032821A1 (en) 2012-02-16
JP5222947B2 (en) 2013-06-26

Similar Documents

Publication Publication Date Title
WO2010032821A1 (en) Mems sensor
JP5315350B2 (en) MEMS sensor
EP2165970B1 (en) Substrate bonded MEMS sensor
JP5177311B1 (en) Capacitance type sensor and manufacturing method thereof
JP5350339B2 (en) Micro-electromechanical system and manufacturing method thereof
JP2012225920A (en) Micro-electromechanical system (mems) device
JP5175152B2 (en) MEMS sensor
WO2010032818A1 (en) Mems sensor and detection device
JP5237733B2 (en) MEMS sensor
JP2010238921A (en) Mems sensor
JP5000625B2 (en) MEMS sensor and manufacturing method thereof
JP5512926B2 (en) Z-offset MEMS device and method
JP6123613B2 (en) Physical quantity sensor and manufacturing method thereof
JP5442277B2 (en) MEMS sensor and manufacturing method thereof
WO2011118785A1 (en) Glass substrate having silicon wiring embedded therein and method for manufacturing the glass substrate
WO2010032819A1 (en) Mems sensor
JP5314979B2 (en) MEMS sensor
WO2011016348A1 (en) Mems sensor
WO2010032822A1 (en) Mems sensor
JP6555238B2 (en) Mechanical quantity sensor and manufacturing method thereof
JP5118923B2 (en) Semiconductor device
JP4817287B2 (en) Method for manufacturing mechanical quantity sensor
JP5929645B2 (en) Physical quantity sensor
JP2024042442A (en) MEMS sensor and MEMS sensor manufacturing method
JP2010156577A (en) Mems sensor and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09814665

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010529807

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09814665

Country of ref document: EP

Kind code of ref document: A1