WO2010032525A1 - カーボンナノチューブ集合体 - Google Patents
カーボンナノチューブ集合体 Download PDFInfo
- Publication number
- WO2010032525A1 WO2010032525A1 PCT/JP2009/061187 JP2009061187W WO2010032525A1 WO 2010032525 A1 WO2010032525 A1 WO 2010032525A1 JP 2009061187 W JP2009061187 W JP 2009061187W WO 2010032525 A1 WO2010032525 A1 WO 2010032525A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carbon nanotube
- carbon nanotubes
- layers
- aggregate
- nanotube aggregate
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/04—Nanotubes with a specific amount of walls
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/752—Multi-walled
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/753—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. with polymeric or organic binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2973—Particular cross section
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2973—Particular cross section
- Y10T428/2975—Tubular or cellular
Definitions
- the present invention relates to an aggregate of carbon nanotubes. More particularly, the present invention relates to an aggregate of carbon nanotubes having excellent adhesive properties. The present invention also relates to various sheets using such an aggregate of carbon nanotubes.
- Carbon nanotubes (Carbon Nanotube: CNT) have good thermal diffusivity and good electrical conductivity. Therefore, composite materials using carbon nanotubes have been studied as thermal contact surface materials in microprocessors.
- a composite material useful as a thermal contact surface material in a microprocessor As a composite material useful as a thermal contact surface material in a microprocessor, a composite material including a polymer material and a plurality of carbon nanotubes has been studied. In the composite material, the plurality of carbon nanotubes are fitted in the polymer material in a vertical direction. As described above, since the plurality of carbon nanotubes are fitted in the polymer material in the vertical direction, high thermal diffusibility and high conductivity can be expressed (see Patent Document 1).
- the composite material utilizes the feature that carbon nanotubes have good conductivity and the feature that the thermal conductivity in the longitudinal direction of the carbon nanotubes is greater than the thermal conductivity in the direction perpendicular to the longitudinal direction. (See paragraph 0029 of Patent Document 1).
- the composite material when used as a thermal contact surface material in a microprocessor, the composite material needs to be disposed between the surfaces of two devices (for example, a heat spreader and a heat sink) and securely fixed. For this reason, the composite material needs to be sufficiently adhered to the device surface. Further, in the manufacturing process of the microprocessor, it may be necessary to peel off and reattach the two devices arranged via the composite material in order to correct misalignment or the like. For this reason, the composite material must have excellent reworkability from the device surface (no adhesive residue and can be easily peeled off and re-adhered).
- thermo contact surface material in a microprocessor
- thermo contact surface material can exhibit very high thermal diffusivity and very high conductivity, and can exhibit sufficient adhesive force on the surface.
- a composite material that is also excellent in reworkability at the time of bonding work has not been obtained so far.
- An object of the present invention is a composite material useful as a thermal contact surface material in a microprocessor, which can exhibit very high thermal diffusivity and very high conductivity, and can exhibit sufficient adhesive force on the surface. Furthermore, it is providing the composite material which is excellent also in the rework property in the case of an adhesion
- the aggregate of carbon nanotubes of the present invention is A carbon nanotube aggregate in which a plurality of carbon nanotubes having a plurality of layers penetrates the resin layer in the thickness direction,
- the shear adhesive strength to glass at 25 ° C. at both ends of the carbon nanotube aggregate is 15 N / cm 2 or more.
- the lengths of the exposed portions of the carbon nanotubes from the resin layer are all 300 ⁇ m or more.
- the distribution width of the number distribution of the carbon nanotubes having a plurality of layers is 10 or more, and the relative frequency of the mode value of the number distribution is 25% or less.
- the mode value of the layer number distribution is in the range of 2 layers to 10 layers.
- the mode number distribution of the carbon nanotubes having a plurality of layers is present in the number of layers of 10 or less, and the relative frequency of the mode value is 30% or more. In a preferred embodiment, the mode value of the layer number distribution is present in six layers or less.
- a thermal diffusion sheet is provided. The thermal diffusion sheet of the present invention uses the aggregate of carbon nanotubes of the present invention.
- a conductive sheet is provided. The conductive sheet of the present invention uses the aggregate of carbon nanotubes of the present invention.
- the present invention is a composite material useful as a thermal contact surface material in a microprocessor, can exhibit very high thermal diffusivity and very high conductivity, and can exhibit sufficient adhesive force on the surface. Furthermore, the composite material which is excellent also in the rework property in the case of an adhesion
- a carbon nanotube aggregate in which a plurality of carbon nanotubes having a plurality of layers penetrates the resin layer in the thickness direction, and the carbon nanotube has a specific structure (number of layers / number of layers, distribution, length, etc.)
- the thermal diffusivity and electrical conductivity will be at a very high level, and it will be possible to develop sufficient adhesion on the surface, and also for reworkability during bonding work A special effect of becoming superior can be expressed.
- FIG. 3 is a graph showing the wall number distribution of carbon nanotubes (1C) obtained in Example 1.
- FIG. 6 is a graph showing the wall number distribution of carbon nanotubes (2C) obtained in Example 2.
- FIG. It is a figure which shows the wall number distribution of the carbon nanotube (C1C) obtained by the comparative example 1. It is a figure which shows the wall number distribution of the carbon nanotube (C2C) obtained by the comparative example 2.
- FIG. 1 shows a schematic cross-sectional view of a carbon nanotube assembly in a preferred embodiment of the present invention (the scale is not accurately described to clearly show each component).
- a plurality of carbon nanotubes 1 having a plurality of layers penetrate the resin layer 2 in the thickness direction.
- the plurality of carbon nanotubes 1 having a plurality of layers expose the exposed portions 11 from both surfaces of the resin layer 2.
- Each exposed portion 11 includes a tip 12.
- the carbon nanotube aggregate 10 of the present invention has the above-described structure, it can express very high thermal diffusivity and very high conductivity, and can express sufficient adhesive force on the surface. Excellent reworkability during bonding work.
- the length of the exposed portion 11 is such that the content ratio of the length of 300 ⁇ m or more in all the exposed portions 11 is preferably 80 to 100%, more preferably 90 to 100%, More preferably 95 to 100%, particularly preferably 98 to 100%, and most preferably substantially 100%.
- substantially 100% means 100% at the detection limit in the measuring instrument.
- the length of each exposed portion 11 is 300 ⁇ m or more.
- both the lengths of the exposed portions 11 are 300 ⁇ m or more, more specifically, it is preferably 300 to 10,000 ⁇ m, more preferably 300 to 5000 ⁇ m, still more preferably 300 to 2000 ⁇ m, and more preferably 300 to It is especially preferable that it is 1000 micrometers.
- the aggregate of carbon nanotubes 10 of the present invention may not exhibit a very high thermal diffusibility and a very high conductivity, and has a sufficient adhesive force on the surface. There is a possibility that it cannot be expressed, and there is also a possibility that the reworkability at the time of the bonding work is poor.
- the shear-bonding strength to glass at 25 ° C. at both ends of the carbon nanotube aggregate 10 that is, the shear-bonding strength to glass shear at 25 ° C. of the tip portion 12 of the carbon nanotube 1 having a plurality of layers.
- the glass-to-glass shear adhesion is preferably 15 to 200 N / cm 2 , more preferably 20 to 200 N / cm 2 , still more preferably 25 to 200 N / cm 2 , and particularly preferably 30 to 200 N / cm 2 .
- bonding adhesive force with respect to glass is less than 15 N / cm ⁇ 2 >, there exists a possibility that the carbon nanotube aggregate 10 of this invention cannot express sufficient adhesive force in the surface.
- the resin layer 2 in the carbon nanotube aggregate 10 of the present invention a layer formed of any appropriate resin can be adopted.
- the resin include acrylic resin, urethane resin, epoxy resin, polycarbonate resin, PET resin, polyimide resin, polyethylene resin, and polypropylene resin.
- any appropriate thickness can be adopted as the thickness of the resin layer 2 in the carbon nanotube aggregate 10 of the present invention depending on the purpose and application.
- the aggregate of carbon nanotubes of the present invention is used as a thermal diffusion sheet or a conductive sheet, it is preferably 5 to 2000 ⁇ m, more preferably 5 to 1500 ⁇ m, still more preferably 10 to 1000 ⁇ m, A thickness of 20 to 500 ⁇ m is particularly preferable.
- the aggregate of carbon nanotubes of the present invention has a feature that it has excellent reworkability during the bonding operation (there is no adhesive residue and can be easily peeled off and re-bonded). With this feature, when the aggregate of carbon nanotubes of the present invention is used as a thermal contact surface material in a microprocessor, the aggregate of carbon nanotubes of the present invention is disposed between the surfaces of two devices (for example, a heat spreader and a heat sink). If there is a misalignment, there is no adhesive residue and it can be easily removed and re-adhered.
- the reworkability can be expressed by peel angle and adhesive strength.
- peel angle and adhesive strength For example, when a laminate in which the carbon nanotube aggregate of the present invention is pressure-bonded to a polypropylene resin (thickness 25 ⁇ m) (one reciprocation of a 5 kg cylinder roller) is peeled at a peeling speed of 50 mm / min, the carbon nanotube aggregate of the present invention is Preferably, the adhesive strength is 1 N / 10 mm or less when the peel angle (angle formed by the carbon nanotube aggregate of the present invention and the polypropylene resin) is 15 ° or more. The lower the lower limit value of the adhesive strength at a peeling angle of 15 °, the easier it is to peel off, so the lower the value, the more preferable it is, for example, preferably 0.01 N / 10 mm.
- One of the preferred embodiments of the aggregate of carbon nanotubes of the present invention includes a plurality of carbon nanotubes having a plurality of layers penetrating the resin layer in the thickness direction.
- the relative frequency of the mode value of the layer number distribution is 25% or less.
- the distribution width of the number distribution of the carbon nanotubes having a plurality of layers is more preferably 10 to 30 layers, still more preferably 10 to 25 layers, and particularly preferably 10 to 20 layers.
- the “distribution width” of the number distribution of carbon nanotubes having a plurality of layers refers to a difference between the maximum number and the minimum number of layers of the carbon nanotubes having a plurality of layers.
- the distribution width of the number distribution of the carbon nanotubes having a plurality of layers is within the above range, so that much higher heat diffusibility and extremely high Conductivity can be expressed, and a sufficient adhesive force can be expressed on the surface, and reworkability at the time of bonding work is further improved.
- the number of layers and the number distribution of carbon nanotubes may be measured by any appropriate apparatus. Preferably, it is measured by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, at least 10, preferably 20 or more carbon nanotubes from the aggregate of carbon nanotubes may be measured by SEM or TEM, and the number of layers and the number distribution of the layers may be evaluated.
- SEM scanning electron microscope
- TEM transmission electron microscope
- the maximum number of layers is preferably 5 to 30 layers, more preferably 10 to 30 layers, still more preferably 15 to 30 layers, and particularly preferably 15 to 25 layers.
- the minimum number of layers is preferably 1 to 10 layers, more preferably 1 to 5 layers.
- the maximum number and the minimum number of the carbon nanotube layers are within the above range, much higher heat diffusibility and extremely high Conductivity can be expressed, and a sufficient adhesive force can be expressed on the surface, and reworkability at the time of bonding work is further improved.
- the relative frequency of the mode value of the layer number distribution is more preferably 1 to 25%, further preferably 5 to 25%, particularly preferably 10 to 25%, and most preferably 15 to 25%.
- the relative frequency of the mode value of the wall number distribution is within the above range, a much higher heat diffusibility and a very high conductivity can be obtained. It can be expressed, and a sufficient adhesive force can be expressed on the surface, and further, reworkability at the time of bonding work is further improved.
- the mode value of the layer number distribution is preferably present from 2 layers to 10 layers, more preferably from 3 layers to 10 layers.
- the mode value of the wall number distribution when the mode value of the wall number distribution is within the above range, much higher thermal diffusibility and very high conductivity can be expressed, In addition, it is possible to develop a more sufficient adhesive force on the surface, and it is further excellent in reworkability at the time of bonding work.
- the cross section thereof has any appropriate shape.
- the cross section may be substantially circular, elliptical, n-gonal (n is an integer of 3 or more), and the like.
- the shear adhesive strength to glass at 25 ° C. at both ends of the carbon nanotube aggregate is preferably 20 to 500 N / cm 2 , more preferably 30 to 100 N / cm. cm 2 , more preferably 30 to 80 N / cm 2 , particularly preferably 35 to 50 N / cm 2 .
- the specific surface area and density of the carbon nanotube can be set to any appropriate value.
- a plurality of carbon nanotubes having a plurality of layers penetrate the resin layer in the thickness direction.
- the distribution width of the number distribution of the carbon nanotubes having a plurality of layers is more preferably 9 or less, still more preferably 1 to 9, more preferably 2 to 8, and most preferably 3 to 8. .
- the “distribution width” of the number distribution of carbon nanotubes having a plurality of layers refers to a difference between the maximum number and the minimum number of layers of the carbon nanotubes having a plurality of layers.
- the distribution width of the wall number distribution of the carbon nanotubes having a plurality of layers is within the above range, so that a much higher thermal diffusibility and a very high level are obtained.
- Conductivity can be expressed, and a sufficient adhesive force can be expressed on the surface, and reworkability at the time of bonding work is further improved.
- the number of layers and the number distribution of carbon nanotubes may be measured by any appropriate apparatus. Preferably, it is measured by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, at least 10, preferably 20 or more carbon nanotubes from the aggregate of carbon nanotubes may be measured by SEM or TEM, and the number of layers and the number distribution of the layers may be evaluated.
- SEM scanning electron microscope
- TEM transmission electron microscope
- the maximum number of layers is preferably 1 to 20 layers, more preferably 2 to 15 layers, and further preferably 3 to 10 layers.
- the minimum number of layers is preferably 1 to 10 layers, more preferably 1 to 5 layers.
- the relative frequency of the mode value of the layer number distribution is more preferably 30 to 100%, further preferably 30 to 90%, particularly preferably 30 to 80%, and most preferably 30 to 70%.
- the relative frequency of the mode value of the wall number distribution is within the above range, much higher heat diffusibility and very high conductivity can be obtained. It can be expressed, and a sufficient adhesive force can be expressed on the surface, and further, reworkability at the time of bonding work is further improved.
- the mode value of the layer number distribution is preferably from 1 to 10 layers, more preferably from 2 to 8 layers, and even more preferably from 2 to 6 layers. .
- the mode value of the wall number distribution when the mode value of the wall number distribution is in the above range, a much higher heat diffusibility and a very high conductivity can be expressed.
- the cross section thereof has any appropriate shape.
- the cross section may be substantially circular, elliptical, n-gonal (n is an integer of 3 or more), and the like.
- the length of the exposed portion (the portion denoted by reference numeral 11 in FIG. 1) is preferably a content ratio of a length of 500 ⁇ m or more in all the exposed portions. 80 to 100%, more preferably 90 to 100%, further preferably 95 to 100%, particularly preferably 98 to 100%, and most preferably substantially 100%.
- substantially 100% means 100% at the detection limit in the measuring instrument.
- the length of the exposed portion is 500 ⁇ m or more.
- the length of each exposed portion is 500 ⁇ m or more, more specifically, it is preferably 500 to 10,000 ⁇ m, more preferably 500 to 5000 ⁇ m, still more preferably 500 to 2000 ⁇ m, and more preferably 500 to 1000 ⁇ m. It is particularly preferred that
- the carbon nanotube aggregate of the present invention when the length of the exposed portion is less than 500 ⁇ m, the carbon nanotube aggregate of the present invention exhibits a very high thermal diffusibility and a very high conductivity. There is a possibility that it cannot be performed, and there is a possibility that sufficient adhesive force cannot be exhibited on the surface, and there is a possibility that the reworkability at the time of bonding work may be inferior.
- the shear adhesive strength to glass at 25 ° C. at both ends of the carbon nanotube aggregate is preferably 20 to 500 N / cm 2 , more preferably 30 to 100 N / cm. cm 2 , more preferably 30 to 80 N / cm 2 , particularly preferably 35 to 50 N / cm 2 .
- the specific surface area and density of the carbon nanotube can be set to any appropriate value.
- Method for producing aggregate of carbon nanotubes of the present invention Any appropriate method can be adopted as a method for producing the carbon nanotube aggregate of the present invention.
- An example of a preferable method for producing the carbon nanotube aggregate of the present invention includes a method of producing in the following steps (1) to (7).
- a protective sheet is pressure-bonded to the end portions of the plurality of carbon nanotubes obtained on the substrate.
- the substrate is removed.
- a protective sheet is pressure-bonded to the end portions of the plurality of carbon nanotubes exposed by removing the substrate.
- a curable resin syrup is poured from the side surfaces of the carbon nanotubes whose both ends are covered with the protective sheet and filled.
- the curable resin syrup is cured by UV irradiation or the like to form a resin layer. (7) Remove the protective sheet.
- any appropriate method can be adopted as a method for growing a plurality of carbon nanotubes on the substrate in the step (1).
- a chemical vapor deposition method (CVD) is used in which a catalyst layer is formed on a smooth substrate, a carbon source is filled with the catalyst activated by heat, plasma, etc., and carbon nanotubes are grown.
- CVD chemical vapor deposition method
- Method a method of producing a carbon nanotube aggregate substantially vertically oriented from the substrate.
- any appropriate substrate can be adopted as the substrate.
- the material which has smoothness and the high temperature heat resistance which can endure manufacture of a carbon nanotube is mentioned.
- examples of such materials include quartz glass, silicon (such as a silicon wafer), and a metal plate such as aluminum.
- any appropriate apparatus can be adopted as an apparatus for growing a plurality of carbon nanotubes on a substrate.
- a thermal CVD apparatus as shown in FIG. 2, a hot wall type configured by surrounding a cylindrical reaction vessel with a resistance heating type electric tubular furnace can be cited.
- a heat-resistant quartz tube is preferably used as the reaction vessel.
- Any appropriate catalyst can be used as a catalyst (catalyst layer material) that can be used to grow a plurality of carbon nanotubes on a substrate.
- metal catalysts such as iron, cobalt, nickel, gold, platinum, silver, copper, are mentioned.
- an alumina / hydrophilic film may be provided between the substrate and the catalyst layer as necessary.
- Any appropriate method can be adopted as a method for producing the alumina / hydrophilic film.
- it can be obtained by forming a SiO 2 film on a substrate, depositing Al, and then oxidizing it by raising the temperature to 450 ° C.
- Al 2 O 3 interacts with the SiO 2 film hydrophilic, different Al 2 O 3 surface particle diameters than those deposited Al 2 O 3 directly formed.
- Al 2 O 3 surfaces having different particle diameters may not be formed easily. Moreover, even if a hydrophilic film is produced on a substrate and Al 2 O 3 is directly deposited, it is difficult to form Al 2 O 3 surfaces having different particle diameters.
- the thickness of the catalyst layer that can be used for growing a plurality of carbon nanotubes on the substrate is preferably 0.01 to 20 nm, more preferably 0.1 to 10 nm, in order to form fine particles.
- the obtained carbon nanotube aggregate of the present invention has a much higher thermal diffusibility and a very high level. Conductivity can be expressed, and a sufficient adhesive force can be expressed on the surface. Furthermore, reworkability at the time of bonding work is further improved.
- Any appropriate method can be adopted as a method for forming the catalyst layer.
- a method of depositing a metal catalyst by EB (electron beam), sputtering, or the like, a method of applying a suspension of metal catalyst fine particles on a substrate, and the like can be mentioned.
- Any appropriate carbon source can be used as a carbon source that can be used for growing a plurality of carbon nanotubes on a substrate.
- hydrocarbons such as methane, ethylene, acetylene, and benzene
- alcohols such as methanol and ethanol
- the temperature for growing a plurality of carbon nanotubes on the substrate is preferably 400 to 1000 ° C., more preferably 500 to 900 ° C., and still more preferably 600 to 800 ° C. in order to form catalyst particles that can sufficiently exhibit the effects of the present invention.
- the protective sheet a sheet-like material formed from any appropriate material can be adopted.
- seat and tape formed from a water-soluble material are mentioned.
- curable resin syrup a curable resin syrup formed from any appropriate curable resin can be adopted.
- the curable resin include a thermosetting resin and a photocurable resin (such as a UV curable resin).
- the protective sheet When the aggregate of carbon nanotubes of the present invention is manufactured, if a sheet or tape formed from a water-soluble material is used as the protective sheet, the resin layer is formed in the step (6) and then washed with water, It is preferable because the protective sheet can be easily removed.
- the aggregate of carbon nanotubes of the present invention can exhibit a very high thermal diffusivity and a very high conductivity, can exhibit a sufficient adhesive force on the surface, and is excellent in reworkability during the bonding operation. Therefore, it is a composite material useful as a thermal contact surface material in a microprocessor.
- the carbon nanotube aggregate of the present invention can be particularly preferably applied to a heat diffusion sheet and a conductive sheet due to the above characteristics.
- the number and the distribution of the number of carbon nanotubes in the aggregate of carbon nanotubes of the present invention were measured by a scanning electron microscope (SEM) and / or a transmission electron microscope (TEM). From the obtained carbon nanotube aggregate, at least 10 or more, preferably 20 or more carbon nanotubes were observed by SEM and / or TEM, the number of layers of each carbon nanotube was examined, and a layer number distribution was created.
- SEM scanning electron microscope
- TEM transmission electron microscope
- thermal diffusivity was measured.
- a contact-type thermal diffusivity evaluation apparatus Al-Phase Mobile: manufactured by Eye Phase Co., Ltd.
- carbon nanotube aggregates carbon nanotube aggregates in which a plurality of carbon nanotubes having multiple layers penetrate the resin layer in the thickness direction
- Both ends of the exposed carbon nanotubes in the body were brought into contact with the device, and the thermal diffusivity was measured (measurement conditions: 2.5 V, 40-60 Hz).
- the volume resistivity was measured as an evaluation of conductivity.
- the volume resistivity in the vertical direction was measured using the apparatus shown in FIG. That is, a carbon nanotube aggregate (a carbon nanotube aggregate in which a plurality of carbon nanotubes having a plurality of layers penetrate the resin layer in the thickness direction) is cut into 10 mm ⁇ , and both of the exposed carbon nanotubes in the carbon nanotube aggregate are cut out.
- Example 1 An Al thin film (thickness 10 nm) was formed on a silicon substrate (Electronics End, thickness 525 ⁇ m) using a vacuum deposition apparatus (JEOL, JEE-4X Vacuum Evaporator), and then oxidized at 450 ° C. for 1 hour. In this way, an Al 2 O 3 film was formed on the silicon substrate. On this Al 2 O 3 film, an Fe thin film (thickness 1 nm) was further evaporated by a sputtering apparatus (manufactured by ULVAC, RFS-200) to form a catalyst layer.
- a sputtering apparatus manufactured by ULVAC, RFS-200
- the catalyst-coated silicon substrate was cut and placed in a 30 mm ⁇ quartz tube, and a helium / hydrogen (120/80 sccm) mixed gas maintained at a moisture of 350 ppm was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. . Thereafter, the inside of the tube was gradually raised to 765 ° C. over 35 minutes using an electric tubular furnace, and stabilized at 765 ° C. After leaving at 765 ° C. for 10 minutes, the tube was filled with a mixed gas of helium / hydrogen / ethylene (105/80/15 sccm, moisture content 350 ppm) while maintaining the temperature, and left for 60 minutes to place the carbon nanotubes on the substrate. Grown up.
- the length of the obtained carbon nanotube (1C) was 1350 ⁇ m.
- the number distribution of the obtained carbon nanotubes (1C) is shown in FIG. As shown in FIG. 4, the mode value was present in two layers, and the relative frequency was 69%.
- the silicon substrate was peeled off.
- the other end of the carbon nanotube (1C) that appeared by peeling was pressure-bonded to a water-soluble double-sided tape (509A, manufactured by Nitto Denko Corporation).
- a structure in which both ends of the carbon nanotube (1C) were covered with the water-soluble double-sided tape was obtained.
- the UV curable resin syrup prepared in Production Example 1 was poured from the side surface side of the carbon nanotube (1C), irradiated with a mercury lamp (illuminance 1 to 50 W) for 5 minutes, and cured to form a resin layer.
- the body was left in distilled water, stirred occasionally, and after 1 hour, the water-soluble double-sided tape covering the carbon nanotube aggregate was removed to obtain a carbon nanotube aggregate (1).
- Example 2 An Al thin film (thickness 10 nm) is formed on a silicon substrate (wafer with thermal oxide film, manufactured by KST, 1000 ⁇ m) by a vacuum deposition apparatus (manufactured by JEOL, JEE-4X Vacuum Evaporator), and then oxidized at 450 ° C. for 1 hour. Was given. In this way, an Al 2 O 3 film was formed on the silicon substrate. On this Al 2 O 3 film, an Fe thin film (thickness 2 nm) was further evaporated by a sputtering apparatus (manufactured by ULVAC, RFS-200) to form a catalyst layer.
- a sputtering apparatus manufactured by ULVAC, RFS-200
- the catalyst-coated silicon substrate was cut and placed in a 30 mm ⁇ quartz tube, and a helium / hydrogen (120/80 sccm) mixed gas maintained at a moisture of 350 ppm was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. . Thereafter, the inside of the tube was gradually raised to 765 ° C. over 35 minutes using an electric tubular furnace, and stabilized at 765 ° C. After leaving at 765 ° C. for 10 minutes, while maintaining the temperature, the tube was filled with a mixed gas of helium / hydrogen / ethylene (105/80/15 sccm, moisture content 350 ppm) and left for 90 minutes to place the carbon nanotubes on the substrate. Grown up.
- the length of the obtained carbon nanotube (2C) was 980 ⁇ m.
- the number distribution of the obtained carbon nanotubes (2C) is shown in FIG. As shown in FIG. 5, the mode values existed in the 4th layer and the 8th layer, and the relative frequencies were 20%, respectively.
- the silicon substrate was peeled off.
- the other end of the carbon nanotube (2C) that appeared by peeling was pressure-bonded to a water-soluble double-sided tape (Nitto Denko Corporation, 509A).
- the UV curable resin syrup prepared in Production Example 1 was poured from the side surface side of the carbon nanotube (2C), irradiated with a mercury lamp (illuminance 1 to 50 W) for 5 minutes, and cured to form a resin layer.
- the catalyst-coated silicon substrate was cut and placed in a 30 mm ⁇ quartz tube, and a helium / hydrogen (120/80 sccm) mixed gas maintained at a moisture of 350 ppm was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. . Thereafter, the inside of the tube was gradually raised to 765 ° C. over 35 minutes using an electric tubular furnace, and stabilized at 765 ° C. After leaving at 765 ° C. for 10 minutes, while maintaining the temperature, the tube was filled with a mixed gas of helium / hydrogen / ethylene (105/80/15 sccm, moisture content 350 ppm) and left for 30 minutes to place the carbon nanotubes on the substrate. Grown up.
- the length of the obtained carbon nanotube (C1C) was 565 ⁇ m.
- the number distribution of the obtained carbon nanotubes (C1C) is shown in FIG. As shown in FIG. 6, the mode value was present in two layers, and the relative frequency was 69%.
- the silicon substrate was peeled off.
- the other end of the carbon nanotube (C1C) that appeared by peeling was pressure-bonded to a water-soluble double-sided tape (509A, manufactured by Nitto Denko Corporation).
- An Al thin film (thickness 10 nm) is formed on a silicon substrate (wafer with thermal oxide film, manufactured by KST, 1000 ⁇ m) by a vacuum deposition apparatus (manufactured by JEOL, JEE-4X Vacuum Evaporator), and then oxidized at 450 ° C. for 1 hour. Was given. In this way, an Al 2 O 3 film was formed on the silicon substrate. On this Al 2 O 3 film, an Fe thin film (thickness 2 nm) was further evaporated by a sputtering apparatus (manufactured by ULVAC, RFS-200) to form a catalyst layer.
- a sputtering apparatus manufactured by ULVAC, RFS-200
- the catalyst-coated silicon substrate was cut and placed in a 30 mm ⁇ quartz tube, and a helium / hydrogen (120/80 sccm) mixed gas maintained at a moisture of 350 ppm was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. . Thereafter, the inside of the tube was gradually raised to 765 ° C. over 35 minutes using an electric tubular furnace, and stabilized at 765 ° C. After leaving at 765 ° C. for 10 minutes, while maintaining the temperature, the tube was filled with a mixed gas of helium / hydrogen / ethylene (105/80/15 sccm, moisture content 350 ppm) and left for 45 minutes to place the carbon nanotubes on the substrate. Grown up.
- the length of the obtained carbon nanotube (C2C) was 840 ⁇ m.
- the number distribution of the obtained carbon nanotubes (C2C) is shown in FIG. As shown in FIG. 7, the mode values existed in the 4th layer and the 8th layer, and the relative frequencies were 20%, respectively.
- the silicon substrate was peeled off.
- the other end of the carbon nanotube (C2C) that appeared by peeling was pressure-bonded to a water-soluble double-sided tape (Nitto Denko Corporation, 509A).
- Example 1 compared with Comparative Example 1, the shear adhesion to glass at 25 ° C. is very large, the thermal diffusivity is very large (the thermal diffusibility is very high), and the volume resistivity is very small ( Very high conductivity).
- Example 2 has a very large shear adhesion to glass at 25 ° C., a very high thermal diffusivity (very high thermal diffusibility), and a very low volume resistivity compared to Comparative Example 2 ( Very high conductivity).
- the aggregate of carbon nanotubes of the present invention can exhibit a very high thermal diffusivity and a very high conductivity, can exhibit a sufficient adhesive force on the surface, and is also excellent in reworkability during bonding work. It is extremely useful as a thermal contact surface material in a microprocessor.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Laminated Bodies (AREA)
Abstract
Description
複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体であって、
該カーボンナノチューブ集合体の両端の25℃における対ガラスせん断接着力が15N/cm2以上である。
好ましい実施形態においては、上記樹脂層からの上記カーボンナノチューブの露出部分の長さが、いずれも300μm以上である。
好ましい実施形態においては、上記複数層を有するカーボンナノチューブの層数分布の分布幅が10層以上であり、該層数分布の最頻値の相対頻度が25%以下である。
好ましい実施形態においては、上記層数分布の最頻値が、層数2層から層数10層の範囲に存在する。
好ましい実施形態においては、上記複数層を有するカーボンナノチューブの層数分布の最頻値が層数10層以下に存在し、該最頻値の相対頻度が30%以上である。
好ましい実施形態においては、上記層数分布の最頻値が層数6層以下に存在する。
本発明の別の局面によれば、熱拡散シートが提供される。本発明の熱拡散シートは、本発明のカーボンナノチューブ集合体を用いたものである。
本発明の別の局面によれば、導電性シートが提供される。本発明の導電性シートは、本発明のカーボンナノチューブ集合体を用いたものである。
図1は、本発明の好ましい実施形態におけるカーボンナノチューブ集合体の概略断面図(各構成部分を明示するために縮尺は正確に記載されていない)を示す。
本発明のカーボンナノチューブ集合体の製造方法としては、任意の適切な方法を採用し得る。
(2)基板上に得られた複数のカーボンナノチューブの末端部に保護シートを圧着する。
(3)基板を除去する。
(4)基板が除去されて露出した複数のカーボンナノチューブの末端部に保護シートを圧着する。
(5)両端部が保護シートで覆われたカーボンナノチューブの側面から硬化性樹脂シロップを流し込んで充填する。
(6)UV照射等によって硬化性樹脂シロップを硬化させ、樹脂層を形成する。
(7)保護シートを除去する。
本発明のカーボンナノチューブ集合体は、非常に高い熱拡散性および非常に高い導電性を発現でき、且つ、表面において十分な接着力を発現でき、さらに、接着作業の際のリワーク性にも優れる。したがって、マイクロプロセッサにおける熱接触面材料として有用な複合材料である。
本発明のカーボンナノチューブ集合体におけるカーボンナノチューブの層数および層数分布は、走査型電子顕微鏡(SEM)および/または透過電子顕微鏡(TEM)によって測定した。得られたカーボンナノチューブ集合体の中から少なくとも10本以上、好ましくは20本以上のカーボンナノチューブをSEMおよび/またはTEMにより観察し、各カーボンナノチューブの層数を調べ、層数分布を作成した。
ガラス(MATSUNAMI スライドガラス27mm×56mm)に、1cm2単位面積に切り出したカーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)における露出した複数のカーボンナノチューブの両末端が接触するように載置し、5kgのローラーを一往復させてカーボンナノチューブの先端をガラスに圧着した。その後、30分間放置した。引張り試験機(Instro Tensil Tester)で引張速度50mm/minにて、25℃にてせん断試験を行い、得られたピークを対ガラスせん断接着力とした。
熱拡散性の評価として、熱拡散率を測定した。接触式熱拡散率評価装置(Ai-Phase Mobile:株式会社アイフェイズ社製)を用い、カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)における露出した複数のカーボンナノチューブの両末端を該装置に接触させ、熱拡散率を測定した(測定条件:2.5V、40-60Hz)。
導電性の評価として、体積抵抗率を測定した。図3に示す装置を用い、垂直方向の体積抵抗率を測定した。すなわち、カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)を10mmφに切り出し、該カーボンナノチューブ集合体における露出した複数のカーボンナノチューブの両末端を導電性のゴム電極(Ag含有、体積抵抗率=5.07×10-3Ωcm)で挟み込み、上側のゴム電極上にSUSの重り(65g)を載置し、電圧(1.0V)をかけ、電流量から体積抵抗率(ρV)を求めた(体積抵抗率ρV(Ωcm)=〔電圧(V)/電流(A)〕×〔面積(cm2)/厚み(cm)〕)。
(UV硬化性樹脂シロップの調製)
EBECRYL3701(ダイセル・サイテック社製)100部に、光重合開始剤のIRGACURE651(チバスペシャリティケミカルズ社製)を0.05部、IRGACURE184(チバスペシャリティケミカルズ社製)を0.05部加え、UV硬化性樹脂シロップを調製した。
シリコン基板(エレクトロニクス エンド製、厚み525μm)上に、真空蒸着装置(JEOL製、JEE-4X Vacuum Evaporator)により、Al薄膜(厚み10nm)を形成した後、450℃で1時間酸化処理を施した。このようにして、シリコン基板上にAl2O3膜を形成した。このAl2O3膜上に、スパッタ装置(ULVAC製、RFS-200)にてさらにFe薄膜(厚み1nm)を蒸着させて触媒層を形成した。
次に、触媒層付シリコン基板をカットして、30mmφの石英管内に載置し、水分350ppmに保ったヘリウム/水素(120/80sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで35分間で段階的に昇温させ、765℃にて安定させた。765℃にて10分間放置後、温度を保持したまま、ヘリウム/水素/エチレン(105/80/15sccm、水分率350ppm)混合ガスを管内に充填させ、60分間放置してカーボンナノチューブを基板上に成長させた。
得られたカーボンナノチューブ(1C)の長さは1350μmであった。
得られたカーボンナノチューブ(1C)の層数分布を図4に示す。図4に示すとおり、最頻値は2層に存在し、相対頻度は69%であった。
得られたカーボンナノチューブ(1C)の片末端に水溶性両面テープ(日東電工株式会社製、509A)に圧着した後、シリコン基板を剥離した。さらに、剥離により現れたカーボンナノチューブ(1C)のもう一方の末端を水溶性両面テープ(日東電工株式会社製、509A)に圧着した。これにより、カーボンナノチューブ(1C)の両末端が水溶性両面テープで覆われた構造体が得られた。その後、カーボンナノチューブ(1C)の側面側から、製造例1で調製したUV硬化性樹脂シロップを流し込み、水銀灯(照度1~50W)で5分間照射を行い、硬化させて、樹脂層を形成した。
得られた、〔水溶性両面テープ/カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)/水溶性両面テープ〕の構成からなる構造体を蒸留水中に放置し、時々撹拌を加え、1時間後に、カーボンナノチューブ集合体を被覆している水溶性両面テープを取り除き、カーボンナノチューブ集合体(1)を得た。
SEMにより、カーボンナノチューブ集合体(1)を分析したところ、樹脂層の厚みは250μm、樹脂層両面におけるカーボンナノチューブの露出部分の長さは、それぞれ510μmおよび550μmであった。
結果を表1にまとめた。
シリコン基板(熱酸化膜付ウエハ、KST製、1000μm)上に、真空蒸着装置(JEOL製、JEE-4X Vacuum Evaporator)により、Al薄膜(厚み10nm)を形成した後、450℃で1時間酸化処理を施した。このようにして、シリコン基板上にAl2O3膜を形成した。このAl2O3膜上に、スパッタ装置(ULVAC製、RFS-200)にてさらにFe薄膜(厚み2nm)を蒸着させて触媒層を形成した。
次に、触媒層付シリコン基板をカットして、30mmφの石英管内に載置し、水分350ppmに保ったヘリウム/水素(120/80sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで35分間で段階的に昇温させ、765℃にて安定させた。765℃にて10分間放置後、温度を保持したまま、ヘリウム/水素/エチレン(105/80/15sccm、水分率350ppm)混合ガスを管内に充填させ、90分間放置してカーボンナノチューブを基板上に成長させた。
得られたカーボンナノチューブ(2C)の長さは980μmであった。
得られたカーボンナノチューブ(2C)の層数分布を図5に示す。図5に示すとおり、最頻値は4層と8層に存在し、相対頻度はそれぞれ20%であった。
得られたカーボンナノチューブ(2C)の片末端に水溶性両面テープ(日東電工株式会社製、509A)に圧着した後、シリコン基板を剥離した。さらに、剥離により現れたカーボンナノチューブ(2C)のもう一方の末端を水溶性両面テープ(日東電工株式会社製、509A)に圧着した。これにより、カーボンナノチューブ(2C)の両末端が水溶性両面テープで覆われた構造体が得られた。その後、カーボンナノチューブ(2C)の側面側から、製造例1で調製したUV硬化性樹脂シロップを流し込み、水銀灯(照度1~50W)で5分間照射を行い、硬化させて、樹脂層を形成した。
得られた、〔水溶性両面テープ/カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)/水溶性両面テープ〕の構成からなる構造体を蒸留水中に放置し、時々撹拌を加え、1時間後に、カーボンナノチューブ集合体を被覆している水溶性両面テープを取り除き、カーボンナノチューブ集合体(2)を得た。
SEMにより、カーボンナノチューブ集合体(2)を分析したところ、樹脂層の厚みは280μm、樹脂層両面におけるカーボンナノチューブの露出部分の長さは、それぞれ350μmおよび380μmであった。
結果を表1にまとめた。
シリコン基板(エレクトロニクス エンド製、厚み525μm)上に、真空蒸着装置(JEOL製、JEE-4X Vacuum Evaporator)により、Al薄膜(厚み10nm)を形成した後、450℃で1時間酸化処理を施した。このようにして、シリコン基板上にAl2O3膜を形成した。このAl2O3膜上に、スパッタ装置(ULVAC製、RFS-200)にてさらにFe薄膜(厚み1nm)を蒸着させて触媒層を形成した。
次に、触媒層付シリコン基板をカットして、30mmφの石英管内に載置し、水分350ppmに保ったヘリウム/水素(120/80sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで35分間で段階的に昇温させ、765℃にて安定させた。765℃にて10分間放置後、温度を保持したまま、ヘリウム/水素/エチレン(105/80/15sccm、水分率350ppm)混合ガスを管内に充填させ、30分間放置してカーボンナノチューブを基板上に成長させた。
得られたカーボンナノチューブ(C1C)の長さは565μmであった。
得られたカーボンナノチューブ(C1C)の層数分布を図6に示す。図6に示すとおり、最頻値は2層に存在し、相対頻度は69%であった。
得られたカーボンナノチューブ(C1C)の片末端に水溶性両面テープ(日東電工株式会社製、509A)に圧着した後、シリコン基板を剥離した。さらに、剥離により現れたカーボンナノチューブ(C1C)のもう一方の末端を水溶性両面テープ(日東電工株式会社製、509A)に圧着した。これにより、カーボンナノチューブ(C1C)の両末端が水溶性両面テープで覆われた構造体が得られた。その後、カーボンナノチューブ(C1C)の側面側から、製造例1で調製したUV硬化性樹脂シロップを流し込み、水銀灯(照度1~50W)で5分間照射を行い、硬化させて、樹脂層を形成した。
得られた、〔水溶性両面テープ/カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)/水溶性両面テープ〕の構成からなる構造体を蒸留水中に放置し、時々撹拌を加え、1時間後に、カーボンナノチューブ集合体を被覆している水溶性両面テープを取り除き、カーボンナノチューブ集合体(C1)を得た。
SEMにより、カーボンナノチューブ集合体(C1)を分析したところ、樹脂層の厚みは140μm、樹脂層両面におけるカーボンナノチューブの露出部分の長さは、それぞれ220μmおよび190μmであった。
結果を表1にまとめた。
シリコン基板(熱酸化膜付ウエハ、KST製、1000μm)上に、真空蒸着装置(JEOL製、JEE-4X Vacuum Evaporator)により、Al薄膜(厚み10nm)を形成した後、450℃で1時間酸化処理を施した。このようにして、シリコン基板上にAl2O3膜を形成した。このAl2O3膜上に、スパッタ装置(ULVAC製、RFS-200)にてさらにFe薄膜(厚み2nm)を蒸着させて触媒層を形成した。
次に、触媒層付シリコン基板をカットして、30mmφの石英管内に載置し、水分350ppmに保ったヘリウム/水素(120/80sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで35分間で段階的に昇温させ、765℃にて安定させた。765℃にて10分間放置後、温度を保持したまま、ヘリウム/水素/エチレン(105/80/15sccm、水分率350ppm)混合ガスを管内に充填させ、45分間放置してカーボンナノチューブを基板上に成長させた。
得られたカーボンナノチューブ(C2C)の長さは840μmであった。
得られたカーボンナノチューブ(C2C)の層数分布を図7に示す。図7に示すとおり、最頻値は4層と8層に存在し、相対頻度はそれぞれ20%であった。
得られたカーボンナノチューブ(C2C)の片末端に水溶性両面テープ(日東電工株式会社製、509A)に圧着した後、シリコン基板を剥離した。さらに、剥離により現れたカーボンナノチューブ(C2C)のもう一方の末端を水溶性両面テープ(日東電工株式会社製、509A)に圧着した。これにより、カーボンナノチューブ(C2C)の両末端が水溶性両面テープで覆われた構造体が得られた。その後、カーボンナノチューブ(C2C)の側面側から、製造例1で調製したUV硬化性樹脂シロップを流し込み、水銀灯(照度1~50W)で5分間照射を行い、硬化させて、樹脂層を形成した。
得られた、〔水溶性両面テープ/カーボンナノチューブ集合体(複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体)/水溶性両面テープ〕の構成からなる構造体を蒸留水中に放置し、時々撹拌を加え、1時間後に、カーボンナノチューブ集合体を被覆している水溶性両面テープを取り除き、カーボンナノチューブ集合体(C2)を得た。
SEMにより、カーボンナノチューブ集合体(C2)を分析したところ、樹脂層の厚みは280μm、樹脂層両面におけるカーボンナノチューブの露出部分の長さは、それぞれ250μmおよび280μmであった。
結果を表1にまとめた。
1 カーボンナノチューブ
2 樹脂層
11 露出部分
12 先端部
Claims (8)
- 複数層を有するカーボンナノチューブの複数が樹脂層を厚み方向に貫通しているカーボンナノチューブ集合体であって、
該カーボンナノチューブ集合体の両端の25℃における対ガラスせん断接着力が15N/cm2以上である、
カーボンナノチューブ集合体。 - 前記樹脂層からの前記カーボンナノチューブの露出部分の長さが、いずれも300μm以上である、請求項1に記載のカーボンナノチューブ集合体。
- 前記複数層を有するカーボンナノチューブの層数分布の分布幅が10層以上であり、該層数分布の最頻値の相対頻度が25%以下である、請求項1または2に記載のカーボンナノチューブ集合体。
- 前記層数分布の最頻値が、層数2層から層数10層の範囲に存在する、請求項3に記載のカーボンナノチューブ集合体。
- 前記複数層を有するカーボンナノチューブの層数分布の最頻値が層数10層以下に存在し、該最頻値の相対頻度が30%以上である、請求項1または2に記載のカーボンナノチューブ集合体。
- 前記層数分布の最頻値が層数6層以下に存在する、請求項5に記載のカーボンナノチューブ集合体。
- 請求項1から6までのいずれかに記載のカーボンナノチューブ集合体を用いた、熱拡散シート。
- 請求項1から6までのいずれかに記載のカーボンナノチューブ集合体を用いた、導電性シート。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09814370.4A EP2330077A4 (en) | 2008-09-18 | 2009-06-19 | AGGREGATE OF CARBON NANOTUBES |
US13/058,236 US8227080B2 (en) | 2008-09-18 | 2009-06-19 | Carbon nanotube aggregate |
JP2010529673A JP5518722B2 (ja) | 2008-09-18 | 2009-06-19 | カーボンナノチューブ集合体 |
CN2009801368357A CN102159499B (zh) | 2008-09-18 | 2009-06-19 | 碳纳米管集合体 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-238853 | 2008-09-18 | ||
JP2008238853 | 2008-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010032525A1 true WO2010032525A1 (ja) | 2010-03-25 |
Family
ID=42039370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/061187 WO2010032525A1 (ja) | 2008-09-18 | 2009-06-19 | カーボンナノチューブ集合体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8227080B2 (ja) |
EP (1) | EP2330077A4 (ja) |
JP (1) | JP5518722B2 (ja) |
KR (1) | KR101615405B1 (ja) |
CN (1) | CN102159499B (ja) |
WO (1) | WO2010032525A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012188305A (ja) * | 2011-03-09 | 2012-10-04 | Nitto Denko Corp | 赤外吸収熱伝導部材 |
WO2013084580A1 (ja) * | 2011-12-08 | 2013-06-13 | 日東電工株式会社 | カーボンナノチューブ集合体およびそれを用いた粘弾性体 |
WO2013084581A1 (ja) * | 2011-12-08 | 2013-06-13 | 日東電工株式会社 | 粘弾性体 |
JP2013119506A (ja) * | 2011-12-08 | 2013-06-17 | Nitto Denko Corp | 広温度領域用粘弾性体 |
JP2013119505A (ja) * | 2011-12-08 | 2013-06-17 | Nitto Denko Corp | 低アウトガス粘弾性体 |
CN103261091A (zh) * | 2010-12-15 | 2013-08-21 | 独立行政法人产业技术综合研究所 | 碳纳米管集合体、三维形状碳纳米管集合体、使用其的碳纳米管成型体、组合物和碳纳米管分散液 |
JP2013199403A (ja) * | 2012-03-23 | 2013-10-03 | Fujitsu Ltd | カーボンナノチューブシート及びその製造方法 |
JP2014200769A (ja) * | 2013-04-09 | 2014-10-27 | 日東電工株式会社 | 吸着材 |
US20140373646A1 (en) * | 2012-02-03 | 2014-12-25 | Nitto Denko Corporation | Sample fixing member for time-of-flight secondary ion mass spectrometer |
US20150153386A1 (en) * | 2012-08-31 | 2015-06-04 | Nitto Denko Corporation | Discharge member for analysis |
JP2017507809A (ja) * | 2014-02-04 | 2017-03-23 | エヌ12 テクノロジーズ, インク.N12 Technologies, Inc. | ナノ構造強化コンポジットの物品及び製造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8337979B2 (en) | 2006-05-19 | 2012-12-25 | Massachusetts Institute Of Technology | Nanostructure-reinforced composite articles and methods |
JP2009537439A (ja) | 2006-05-19 | 2009-10-29 | マサチューセッツ・インスティテュート・オブ・テクノロジー | ナノチューブを含むナノ構造の生成のための連続処理 |
JP4472785B2 (ja) * | 2008-04-16 | 2010-06-02 | 日東電工株式会社 | 繊維状柱状構造体集合体およびそれを用いた粘着部材 |
JP2013160589A (ja) * | 2012-02-03 | 2013-08-19 | Nitto Denko Corp | ナノインデンター用試料固定部材 |
JP2014002004A (ja) * | 2012-06-18 | 2014-01-09 | Nitto Denko Corp | 粒子吸着マイクロプローブ |
JP2014084272A (ja) * | 2012-10-26 | 2014-05-12 | Applied Materials Inc | 銅基板上のカーボンナノチューブ成長 |
EP3463826B1 (en) | 2016-05-31 | 2023-07-05 | Massachusetts Institute of Technology | Composite articles comprising non-linear elongated nanostructures and associated methods |
JP6975545B2 (ja) * | 2016-10-03 | 2021-12-01 | 日東電工株式会社 | カーボンナノチューブ集合体 |
JP6901896B2 (ja) * | 2017-03-31 | 2021-07-14 | 日立造船株式会社 | フィラー・樹脂複合体、フィラー・樹脂複合体の製造方法、フィラー・樹脂複合層、および、フィラー・樹脂複合体の使用方法 |
JP6951149B2 (ja) * | 2017-08-10 | 2021-10-20 | 日立造船株式会社 | フィラー・樹脂複合体の製造方法 |
EP3681942A4 (en) | 2017-09-15 | 2021-05-05 | Massachusetts Institute of Technology | LOW DEFAULT MANUFACTURING OF COMPOSITE MATERIALS |
WO2019108616A1 (en) | 2017-11-28 | 2019-06-06 | Massachusetts Institute Of Technology | Separators comprising elongated nanostructures and associated devices and methods for energy storage and/or use |
JP2022542444A (ja) * | 2019-07-30 | 2022-10-03 | リー,ヨンジュン | 熱界面材料 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003249613A (ja) * | 2001-12-20 | 2003-09-05 | Intel Corp | カーボンナノチューブ熱インターフェイス構造 |
JP2004161996A (ja) * | 2002-11-14 | 2004-06-10 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 熱伝導性界面材料及びその製造方法 |
JP2006147801A (ja) * | 2004-11-18 | 2006-06-08 | Seiko Precision Inc | 放熱シート、インターフェース、電子部品及び放熱シートの製造方法 |
JP2006270041A (ja) * | 2005-03-24 | 2006-10-05 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 熱伝導材料及びその製造方法 |
WO2008035742A1 (fr) * | 2006-09-22 | 2008-03-27 | International Business Machines Corporation | Structure d'interface thermique et procédé de fabrication de celle-ci |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100913307B1 (ko) * | 2002-12-12 | 2009-08-26 | 삼성전자주식회사 | 백라이트 어셈블리와 이를 갖는 액정 표시 장치 |
CN1837147B (zh) * | 2005-03-24 | 2010-05-05 | 清华大学 | 热界面材料及其制备方法 |
CN100404242C (zh) * | 2005-04-14 | 2008-07-23 | 清华大学 | 热界面材料及其制造方法 |
US7402909B2 (en) * | 2005-04-28 | 2008-07-22 | Intel Corporation | Microelectronic package interconnect and method of fabrication thereof |
CN101054467B (zh) * | 2006-04-14 | 2010-05-26 | 清华大学 | 碳纳米管复合材料及其制备方法 |
CN101058720B (zh) * | 2006-04-21 | 2011-08-24 | 清华大学 | 热界面材料 |
CN100591613C (zh) * | 2006-08-11 | 2010-02-24 | 清华大学 | 碳纳米管复合材料及其制造方法 |
US8064203B2 (en) * | 2007-02-22 | 2011-11-22 | Dow Corning Corporation | Process for preparing conductive films and articles prepared using the process |
-
2009
- 2009-06-19 US US13/058,236 patent/US8227080B2/en not_active Expired - Fee Related
- 2009-06-19 KR KR1020117006171A patent/KR101615405B1/ko not_active IP Right Cessation
- 2009-06-19 EP EP09814370.4A patent/EP2330077A4/en not_active Withdrawn
- 2009-06-19 WO PCT/JP2009/061187 patent/WO2010032525A1/ja active Application Filing
- 2009-06-19 JP JP2010529673A patent/JP5518722B2/ja not_active Expired - Fee Related
- 2009-06-19 CN CN2009801368357A patent/CN102159499B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003249613A (ja) * | 2001-12-20 | 2003-09-05 | Intel Corp | カーボンナノチューブ熱インターフェイス構造 |
JP2004161996A (ja) * | 2002-11-14 | 2004-06-10 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 熱伝導性界面材料及びその製造方法 |
JP2006147801A (ja) * | 2004-11-18 | 2006-06-08 | Seiko Precision Inc | 放熱シート、インターフェース、電子部品及び放熱シートの製造方法 |
JP2006270041A (ja) * | 2005-03-24 | 2006-10-05 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 熱伝導材料及びその製造方法 |
WO2008035742A1 (fr) * | 2006-09-22 | 2008-03-27 | International Business Machines Corporation | Structure d'interface thermique et procédé de fabrication de celle-ci |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103261091A (zh) * | 2010-12-15 | 2013-08-21 | 独立行政法人产业技术综合研究所 | 碳纳米管集合体、三维形状碳纳米管集合体、使用其的碳纳米管成型体、组合物和碳纳米管分散液 |
US10494262B2 (en) | 2010-12-15 | 2019-12-03 | National Institute Of Advanced Industrial Science And Technology | Carbon nanotube aggregate, carbon nanotube aggregate having a three-dimensional shape, carbon nanotube molded product using the carbon nanotube aggregate, composition, and carbon nanotube dispersion liquid |
US9809457B2 (en) | 2010-12-15 | 2017-11-07 | National Institute Of Advanced Industrial Science And Technology | Carbon nanotube aggregate, carbon nanotube aggregate having a three-dimensional shape, carbon nanotube molded product using the carbon nanotube aggregate, composition, and carbon nanotube dispersion liquid |
JP2012188305A (ja) * | 2011-03-09 | 2012-10-04 | Nitto Denko Corp | 赤外吸収熱伝導部材 |
JP2013119506A (ja) * | 2011-12-08 | 2013-06-17 | Nitto Denko Corp | 広温度領域用粘弾性体 |
JP2013119504A (ja) * | 2011-12-08 | 2013-06-17 | Nitto Denko Corp | カーボンナノチューブ集合体およびそれを用いた粘弾性体 |
JP2013119505A (ja) * | 2011-12-08 | 2013-06-17 | Nitto Denko Corp | 低アウトガス粘弾性体 |
US9795994B2 (en) | 2011-12-08 | 2017-10-24 | Nitto Denko Corporation | Carbon nanotube assembly and viscoelastic body using same |
WO2013084581A1 (ja) * | 2011-12-08 | 2013-06-13 | 日東電工株式会社 | 粘弾性体 |
WO2013084580A1 (ja) * | 2011-12-08 | 2013-06-13 | 日東電工株式会社 | カーボンナノチューブ集合体およびそれを用いた粘弾性体 |
US20140373646A1 (en) * | 2012-02-03 | 2014-12-25 | Nitto Denko Corporation | Sample fixing member for time-of-flight secondary ion mass spectrometer |
JP2013199403A (ja) * | 2012-03-23 | 2013-10-03 | Fujitsu Ltd | カーボンナノチューブシート及びその製造方法 |
US20150153386A1 (en) * | 2012-08-31 | 2015-06-04 | Nitto Denko Corporation | Discharge member for analysis |
JP2014200769A (ja) * | 2013-04-09 | 2014-10-27 | 日東電工株式会社 | 吸着材 |
JP2017507809A (ja) * | 2014-02-04 | 2017-03-23 | エヌ12 テクノロジーズ, インク.N12 Technologies, Inc. | ナノ構造強化コンポジットの物品及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102159499B (zh) | 2013-07-24 |
US20110133135A1 (en) | 2011-06-09 |
EP2330077A1 (en) | 2011-06-08 |
JP5518722B2 (ja) | 2014-06-11 |
JPWO2010032525A1 (ja) | 2012-02-09 |
KR20110063462A (ko) | 2011-06-10 |
KR101615405B1 (ko) | 2016-04-25 |
US8227080B2 (en) | 2012-07-24 |
CN102159499A (zh) | 2011-08-17 |
EP2330077A4 (en) | 2015-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5518722B2 (ja) | カーボンナノチューブ集合体 | |
JP4545827B1 (ja) | 繊維状柱状構造体集合体およびそれを用いた粘着部材 | |
JP4472785B2 (ja) | 繊維状柱状構造体集合体およびそれを用いた粘着部材 | |
US9550677B2 (en) | Carbon nanotube composite structural body and pressure-sensitive adhesive member | |
JP5577089B2 (ja) | カーボンナノチューブ複合構造体および粘着部材 | |
JP5714928B2 (ja) | 繊維状柱状構造体集合体および放熱部材 | |
JP5199753B2 (ja) | カーボンナノチューブ集合体の製造方法 | |
JP5578699B2 (ja) | カーボンナノチューブ集合体 | |
WO2013084580A1 (ja) | カーボンナノチューブ集合体およびそれを用いた粘弾性体 | |
WO2013115144A1 (ja) | 原子間力顕微鏡用試料固定部材 | |
WO2013115146A1 (ja) | ナノインデンター用試料固定部材 | |
JP2010073843A (ja) | マイクロプロセッサ構造 | |
JP2010073842A (ja) | マイクロプロセッサ構造 | |
JP5892778B2 (ja) | 広温度領域用粘弾性体 | |
KR20110057986A (ko) | 탄소 나노 튜브 기반 전자 소자 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980136835.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09814370 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010529673 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13058236 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009814370 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20117006171 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |