WO2010013624A1 - Borne d'introduction de courant, appareil de traitement de surface par plasma comportant la borne d'introduction de courant et procédé de traitement de surface par plasma - Google Patents

Borne d'introduction de courant, appareil de traitement de surface par plasma comportant la borne d'introduction de courant et procédé de traitement de surface par plasma Download PDF

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WO2010013624A1
WO2010013624A1 PCT/JP2009/063116 JP2009063116W WO2010013624A1 WO 2010013624 A1 WO2010013624 A1 WO 2010013624A1 JP 2009063116 W JP2009063116 W JP 2009063116W WO 2010013624 A1 WO2010013624 A1 WO 2010013624A1
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electrodes
plasma
pair
introduction terminal
current introduction
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Japanese (ja)
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村田正義
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Murata Masayoshi
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the present invention relates to a surface treatment apparatus and a surface treatment method for performing a predetermined treatment on the surface of a substrate using plasma.
  • the present invention relates to a surface treatment apparatus using an ultrahigh frequency plasma having a low electron temperature and capable of generating a high density plasma, that is, a plasma generated by a high frequency power having a frequency in the VHF band (30 MHz to 300 MHz) and
  • the present invention relates to a surface treatment method.
  • LSI Large Scale Integrated Circuit
  • LCD Liquid Crystal Display
  • TFT Thin Film Transistor
  • amorphous silicon solar cell and microcrystal. It has already been put into practical use in fields such as silicon solar cells.
  • An integrated tandem thin film silicon solar cell has a transparent electrode layer, an amorphous silicon photoelectric conversion unit layer, a function of reflecting short wavelength light and transmitting long wavelength light to a light transmissive substrate (for example, glass). Is formed by sequentially laminating an intermediate layer, a crystalline silicon photoelectric conversion unit layer, and a back electrode layer.
  • the amorphous silicon photoelectric conversion unit layer is composed of a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, and the like, and the thickness of the entire pin layer is about 0.3 ⁇ m.
  • the crystalline silicon photoelectric conversion unit layer is composed of a p-type microcrystalline semiconductor layer, an i-type microcrystalline semiconductor layer, an n-type microcrystalline semiconductor layer, etc., and the thickness of the entire pin layer is about 2.5 to 5 ⁇ m. .
  • the i-type microcrystalline semiconductor layer has a thickness of about 2 to 4 ⁇ m.
  • the integrated tandem-type thin film solar cell has the merit that the photoelectric conversion efficiency can be easily improved, but the i-type microcrystalline semiconductor of the crystalline silicon photoelectric conversion unit layer that requires a thickness of about 2 to 4 ⁇ m. A great deal of time is required to produce the layer. Therefore, it is necessary to install a plurality of i-type microcrystalline semiconductor layer manufacturing apparatuses, which has a demerit that production cost increases. In recent years, in order to eliminate this disadvantage, development of a technique for improving the deposition rate of the i-type microcrystalline semiconductor layer and development of a plasma CVD apparatus capable of producing a large area with high quality and good uniformity have been carried out. It has been broken.
  • VHF very high frequency band: 30 MHz to 300 MHz
  • SiH4 silane gas
  • Non-Patent Document 1 discloses a technique relating to high-quality and high-speed film formation of a crystalline i-layer film for an integrated tandem-type thin film solar cell by VHF plasma CVD using parallel plate electrodes. That is, as experimental conditions, parallel plate electrode size: diameter 10 cm, source gas: high hydrogen diluted SiH4, pressure: 2-4 Torr (133-532 Pa), substrate temperature: 250 ° C., power supply frequency: 60 MHz, input power: film formation It is shown that high-quality microcrystalline Si can be obtained by setting the speed to 2.54 W / cm 2 at a speed of 1.7 nm / s and 3.4 W / cm 2 at 2.5 nm / s.
  • high-quality microcrystalline Si can be obtained by using VHF plasma CVD with a frequency of 60 MHz even under high-speed film forming conditions of 1.7 to 2.5 nm / s.
  • the input power is 2.54 W / cm 2 when the film forming speed is 1.7 nm / s, and 3.4 W / cm 2 when the film forming speed is 2.5 nm / s, which means that very large power is required.
  • the substrate area is 110 cm ⁇ 140 cm (15400 cm 2)
  • 39.1 kW is necessary when the film forming speed is 1.7 nm / s
  • 52.4 kW is necessary when the film forming speed is 2.5 nm / s. It means that.
  • Non-Patent Document 2 shows the results of research on power consumption in plasma generation using parallel plate electrodes. That is, an N2 plasma generation experiment was conducted by applying 13.56 MHz power to a parallel plate electrode (size: diameter 15 cm, electrode interval: 5 cm) installed in a vacuum vessel having a diameter of 30 cm through an impedance matching device. It is shown that the amount of power consumed is measured. As a result of the measurement, about 52% of the power output (300W) is consumed between the parallel plate electrodes, and the remaining 48% is consumed elsewhere (impedance matching device 12%, transmission circuit 24%, electrode and vacuum vessel It is shown that ineffective plasma generation between the inner walls is 12%). The above means that in an RF plasma CVD apparatus using parallel plate electrodes, about 52% of the electric power supplied from the power source is consumed between the target electrodes.
  • Non-Patent Document 3 shows the results of research on the development of a plasma CVD apparatus using a large-area, uniform VHF plasma generation method using a ladder-type electrode described in Patent Document 2 described later. That is, Non-Patent Document 3 shows an outline of a plasma CVD apparatus used for research and a film forming experiment. As an apparatus used in the experiment, there is shown a plasma CVD apparatus having a structure in which a substrate heater, a ladder electrode, and a back plate are disposed facing each other in a vacuum vessel. Supply of VHF power to a ladder-type electrode (two vertical bars of the same length installed in one plane and connected between them by a plurality of horizontal bars of the same length) is supplied to two opposing sides. This is done from the installed feeding point.
  • the phase difference between the voltages of the electric power supplied to the two sides is changed with time, for example, changed in a sine wave form.
  • the output of the impedance matching unit is divided into eight branches using a plurality of T-type coaxial connectors and connected to eight feeding points. There are a total of 16 feeding points on both sides.
  • the electrode dimensions are 1.2 mx 1.5 m
  • the substrate area is 1.1 mx 1.4 m
  • the power frequency is 60 MHz
  • the distance between the ladder electrode and the substrate heater is 20 mm
  • the pressure is 45 Pa (0.338 Torr).
  • the film formation rate of amorphous Si is 1.7 nm / s, and the non-uniformity of the film is ⁇ 18%.
  • Non-Patent Document 4 shows a research result on the development research of a plasma CVD apparatus applying a large area, uniform VHF plasma generation method using a ladder-type electrode described in Patent Document 3 described later. That is, Non-Patent Document 4 shows an outline of a plasma CVD apparatus used for research and a film forming experiment. As an apparatus used for the experiment, a plasma CVD apparatus having a structure in which a ladder electrode and a ground electrode are spaced apart from each other in a vacuum vessel is shown. Supply of VHF power to a ladder-type electrode (two vertical bars of the same length installed in one plane and connected between them by a plurality of horizontal bars of the same length) is supplied to two opposing sides. This is done from the installed feeding point.
  • the phase difference of the voltage of the electric power supplied to two sides is supplied by changing it into a sine wave shape.
  • An eight-branch power divider (Power Divider) is installed between the impedance matching device and a plurality of feeding points installed on one side.
  • the electrode dimensions are 1.25 mx 1.55 m (rod diameter: 10 mm)
  • the substrate area is 1.1 mx 1.4 m
  • the power frequency is 60 MHz
  • the voltage phase difference is a sine wave of 20 KHz.
  • the amorphous Si film formation rate is 0.5 nm / s, and the non-uniformity of the film is ⁇ 15%.
  • Patent Document 1 discloses an invention related to a VHF plasma CVD apparatus using a ladder-type electrode and a method therefor. That is, the technique described in Patent Document 1 is a method for manufacturing a photoelectric conversion apparatus using a plasma CVD apparatus in which a discharge electrode and a ground electrode are disposed in a chamber so as to face each other. (B) a step of setting the distance between the substrate and the discharge electrode to 8 mm or less, (C) the substrate Is heated to 180 to 220 ° C. by a heater built in the ground electrode, (D) a material gas is supplied into the chamber, and (E) the pressure in the chamber is set to 600 Pa to 2000 Pa.
  • Patent Document 2 discloses a method for generating a large area and uniform VHF plasma. That is, in the technique described in Patent Document 2, a substrate to be processed held by a single holding electrode and a single discharge electrode are arranged facing each other in a discharge container, and the discharge electrode and the substrate to be processed are arranged. A method of supplying power to a discharge electrode that generates a substantially uniform discharge state in a wide range between the two, wherein the power is supplied to one power supply point when power is supplied to the discharge electrode through a plurality of power supply points. The voltage distribution generated in the discharge electrode is changed by temporally changing the difference between the phase of the voltage waveform of the high frequency power and the phase of the voltage waveform of the high frequency power supplied to at least one other feeding point.
  • the average value per unit time or the integrated value per unit time of the voltage distribution is made substantially uniform, and the occurrence of standing waves in the voltage distribution of the discharge electrode in the previous period is suppressed.
  • the technique described in Patent Document 2 is characterized in that the discharge electrode is a ladder-type electrode. Further, the high frequency used is in the range of 30 to 800 MHz.
  • Patent Document 3 discloses an apparatus that generates a uniform plasma with a large area using a ladder-type electrode. That is, the technique described in Patent Document 3 is a structure of a ladder-type discharge electrode for generating plasma in a plasma chemical vapor deposition apparatus, and feeds high-frequency power having a first same frequency to power supply portions at both ends of the ladder-type discharge electrode. And a cycle for feeding a high frequency of a second different frequency, and the cycle is alternately switched to feed the power, and the crossbar is perpendicular to the axial direction of the discharge electrode. In addition, the plasma generated by changing the standing wave shape is made uniform.
  • Patent Document 3 is a structure of a ladder-type discharge electrode for generating plasma in a plasma chemical vapor deposition apparatus, and feeds high-frequency power having a first same frequency to power supply portions at both ends of the ladder-type discharge electrode. And a cycle for feeding a high frequency of a second different frequency, and the cycle is alternately switched to feed the power, and the crossbar is perpendicular to the axial direction of the discharge electrode.
  • the diameter of the ladder-type discharge electrode is reduced within a range in which the standing wave wavelength is increased, and the generated plasma is made uniform.
  • Patent Document 3 is a structure of a ladder-type discharge electrode for generating plasma in a plasma chemical vapor deposition apparatus, and feeds high-frequency power having a first same frequency to power supply portions at both ends of the ladder-type discharge electrode. And a cycle for feeding a high frequency wave of a second different frequency. The cycle is alternately switched to feed power, and the discharge electrode is divided into a plurality of parts in a direction perpendicular to the axial direction.
  • the present invention is characterized in that the deviation of the plasma density is reduced by balancing the power in the left-right direction of the discharge electrode.
  • Patent Document 4 discloses a method capable of generating a large VHF plasma with a large area by alternately generating two standing waves between a pair of electrodes in terms of time. That is, the technique described in Patent Document 4 generates a plasma in which a substrate is set, a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, and plasma.
  • a pair of electrodes composed of a first electrode and a second electrode; a first high-frequency power source capable of arbitrary pulse modulation and capable of arbitrarily setting a phase difference between two outputs and the voltage of the two outputs;
  • the first and second impedance matching units connected to the two output terminals of one high frequency power source and arbitrary pulse modulation synchronized with the pulse modulation signal of the first high frequency power source are possible, and two outputs are provided.
  • a power supply system comprising a second high-frequency power source capable of arbitrarily setting a phase difference between the voltages of the two outputs, and third and fourth impedance matching units connected to two output terminals of the second high-frequency power source; And use the generated plasma.
  • a plasma surface treatment method for treating a surface of a substrate wherein a position of an antinode of a first standing wave generated between the pair of electrodes by two outputs of the first high-frequency power source and the second The distance of the antinode position of the second standing wave generated between the pair of electrodes by the two outputs of the high frequency power source is set to a quarter of the wavelength ⁇ of the power used, that is, ⁇ / 4.
  • the plasma surface treatment method is characterized. Further, the technique described in Patent Document 4 generates a plasma in which a substrate is set, a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, and plasma.
  • a pair of electrodes composed of a first electrode and a second electrode; a first high-frequency power source capable of arbitrary pulse modulation and capable of arbitrarily setting a phase difference between two outputs and the voltage of the two outputs;
  • the first and second impedance matching units connected to the two output terminals of one high frequency power source and arbitrary pulse modulation synchronized with the pulse modulation signal of the first high frequency power source are possible, and two outputs are provided.
  • a power supply system comprising a second high-frequency power source capable of arbitrarily setting a phase difference between the voltages of the two outputs, and third and fourth impedance matching units connected to two output terminals of the second high-frequency power source; And use the generated plasma.
  • a plasma surface treatment method for treating a surface of a substrate comprising: a Si-based film having a phase difference between two outputs of the first high-frequency power source and a sinusoidal film thickness distribution formed on the substrate surface
  • a third Si film is formed on the substrate by setting the phase difference between the two outputs of the first and second high-frequency power sources based on the relationship between the phase difference and the position where the film thickness is maximized.
  • a plasma surface treatment method comprising the steps of: If the first standing wave and the second standing wave are generated between the pair of electrodes and the distance between the antinodes is a quarter of the wavelength ⁇ of the power used, the pair of electrodes
  • the power intensity I (x) in the interval is as follows, and is uniform (constant value) regardless of the frequency.
  • I (x) cos 2 (2 ⁇ x / ⁇ + ⁇ / 2) + sin 2 (2 ⁇ x / ⁇ + ⁇ / 2)
  • x is the distance in the propagation direction of the supplied power
  • ⁇ is the wavelength of the used power
  • ⁇ is the initial phase difference at the feeding point.
  • Patent Document 5 discloses an apparatus and a method related to a technique for installing a balance-unbalance conversion device between an impedance matching unit and a feeding point on an electrode in a power supply circuit. That is, the technique described in Patent Document 5 is an impedance matching between a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, a plasma generation electrode, and a high-frequency power source. And a substrate holding means for arranging a substrate to be plasma-processed, and used for a plasma surface processing apparatus for processing the surface of the substrate using the generated plasma.
  • the technique described in Patent Document 5 includes impedance matching between a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, an electrode for plasma generation, and a high-frequency power source. And a substrate holding means for arranging a substrate to be plasma-processed, and used for a plasma surface processing apparatus for processing the surface of the substrate using the generated plasma.
  • a balanced transmission circuit in which two outer conductors of coaxial cables having substantially the same length are short-circuited by other conductors at both ends, and each of one ends of the two coaxial cables
  • the balanced transmission circuit has a configuration in which the core wire is used as an input unit, and each core wire at the other end is used as an output unit.
  • the technique described in Patent Document 5 includes a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, and first and second electrodes that generate plasma.
  • a pair of electrodes a power supply system including a high-frequency power source, an impedance matching unit, and a balance-unbalance conversion device, and substrate holding means for arranging a substrate to be plasma-treated, and using the generated plasma,
  • a balanced transmission circuit having a plurality of openings is provided in the pair of electrodes, a power supply point is arranged on each peripheral edge of the pair of electrodes, and the above configuration is used.
  • the plasma surface treatment apparatus has a configuration in which an output circuit of the balance-unbalance conversion device of the power supply system component is connected to a power supply point of the pair of electrodes.
  • Patent Document 5 includes a vacuum vessel provided with an exhaust system, a discharge gas supply system that supplies a discharge gas into the vacuum vessel, and first and second electrodes that generate plasma.
  • An apparatus configuration of a power supply circuit that supplies a power from the power supply system to the pair of electrodes in a plasma surface treatment apparatus that includes a balanced transmission circuit having a configuration and processes the surface of a substrate using generated plasma.
  • Patent Document 5 discloses that a conventional plasma CVD apparatus using a parallel plate electrode and a plasma CVD apparatus using a ladder-type electrode generate a leakage current in a power feeding portion to the electrode used in the apparatus. It has been pointed out that abnormal discharge or arcing occurs, and that plasma is generated at a place other than the pair of electrodes, making uniform film formation difficult.
  • connection portion between the coaxial cable for supplying power and the electrode has a shape in which lines having different structures are connected to each other, and a leakage current is generated at the connection portion.
  • the coaxial cable is a transmission system in which the inner conductor (core wire) and the inner surface of the outer conductor are the forward path and the return path, respectively, and the pair of electrodes has a structure corresponding to two parallel lines.
  • Patent Document 6 discloses an apparatus and method relating to a technique for installing a balance-unbalance conversion device between an impedance matching unit and a feeding point on an electrode in a power supply circuit.
  • a pair of electrodes opposed to each other in the vacuum vessel and power to the pair of electrodes are respectively supplied.
  • Patent Document 6 discloses a pair of electrodes opposed to each other in a vacuum vessel, a coaxial cable that supplies power to each of the pair of electrodes, and a core wire of the coaxial cable that is installed on each of the pair of electrodes.
  • a feeding point to which power is supplied from the coaxial cable, an outer conductor of the coaxial cable that supplies power to one electrode of the pair of electrodes, and the coaxial cable that supplies power to the other electrode Using a surface treatment apparatus provided with other conductors that connect the outer conductors in the vicinity of the respective feeding points, a substrate is disposed between the pair of electrodes, and the surface of the substrate is removed using plasma.
  • the method includes the steps of exhausting the inside of the vacuum vessel, supplying a discharge gas into the vacuum vessel, and supplying power to both the pair of electrodes, Serial describes a surface treatment wherein the phase difference between the voltage of the pair of the power supplied to the electrode is 180 °.
  • JP 2006-216921 A (FIGS. 6, 9, 10) Japanese Patent No. 3316490 (Figs. 1-3, 6, 7) Japanese Patent No. 3611309 (FIGS. 1, 2, 3, 4) JP-A-2005-123203 (FIGS. 1-4, 8, 9) Japanese Patent No. 3590955 (Figs. 1-8 and 15-17) Japanese Patent No. 3810748 (Fig. 1-5)
  • Non-Patent Documents 1 to 4 and Patent Documents 1 to 6 the present inventor has described the above-mentioned integration as a problem related to the plasma CVD apparatus used for manufacturing the integrated tandem-type thin film solar cell.
  • no device and technology have been established for this.
  • the creation of plasma CVD apparatus and method for the following (ro) to (v) is important for the production of integrated tandem thin-film solar cells in order to achieve highly reproducible production, high yield and production cost reduction.
  • the substrate area is 1.1 mx 1.4 m
  • the film forming speed is 2 nm / s or more
  • the film thickness non-uniformity is ⁇ 10% or less (if the non-uniformity is about ⁇ 10% or more, the integrated tandem thin film solar
  • (A) Abnormal discharge (arcing) does not occur in the vicinity of the power feeding section.
  • Non-Patent Documents 1 and 2 an outline of the structure and technology of a plasma CVD apparatus using parallel plate electrodes, which is a typical plasma CVD apparatus in the field of thin film silicon solar cells, is described in Non-Patent Documents 1 and 2, for example.
  • a non-grounded plate-type electrode and a grounded plate-type electrode are installed facing each other, and while supplying a raw material gas between them, electric power is supplied to generate plasma, and in advance on the ground electrode A silicon-based film is deposited on the installed substrate.
  • the feeding point where the core wire of the coaxial cable that supplies power to the electrode and the non-grounded electrode is connected is provided on the back surface of the non-grounded electrode.
  • the back side surface is a surface on the back side as seen from the plasma side generated between the non-ground electrode and the ground electrode, among the two surfaces of the non-ground electrode.
  • a power wave propagating as an electromagnetic wave (wave) from the feeding point is provided with a space (or an earth shield) between the non-grounded electrode and the vacuum vessel wall from one point on the back surface of the non-grounded electrode. In this case, it propagates through the space between the non-grounded electrode and the earth shield and reaches between the electrodes. Then, plasma is generated between the electrodes.
  • Non-Patent Document 1 discloses that when a high quality and high speed film formation of a crystalline i-layer film for an integrated tandem thin film solar cell is performed, the input power is 2.54 W when the film formation speed is 1.7 nm / s. In the case of / cm 2 and 2.5 nm / s, it is shown to be 3.4 W / cm 2. For example, when the substrate area is 110 cm ⁇ 140 cm (15400 cm 2), if the substrate area is simply proportionally calculated, 39.1 kW is obtained at a film forming speed of 1.7 nm / s, and 52.4 kW is obtained at 2.5 nm / s. is necessary.
  • the power supply device of VHF has an output of about 5 to 10 kW
  • the purchase price of the device is as high as 80 to 100 million yen. If the output is 39.1 KW or 52.4 KW, the device is very expensive, from 400 million yen to 500 million yen. In an actual production line, the introduction of such a very expensive apparatus greatly increases the product cost. Therefore, the plasma CVD apparatus using the parallel plate type electrode and the film forming conditions are not adopted. Have difficulty. Considering the case where a condition of 52.4 KW is selected with a substrate area of 110 cm ⁇ 140 cm and 2.5 nm / s for a production line of a crystalline i-layer film for an integrated tandem thin film solar cell, Such power consumption and power charges are required.
  • the electricity bill is 20 yen per kWh, it will be about 7.8 million yen (even if it is 15 yen per kWh, it will be about 5.85 million yen).
  • the enormous electricity bill as described above increases the product cost. Therefore, it is difficult to adopt the plasma CVD apparatus using the parallel plate type electrode and the film forming conditions.
  • Non-Patent Document 2 According to the research results shown in Non-Patent Document 2, about 52% of the power output is consumed between the parallel plate electrodes, and the remaining 48% is consumed elsewhere (impedance matching device 12%, transmission circuit 24). %, 12% of ineffective plasma is generated between the electrode and the inner wall of the vacuum vessel. In other words, in the application to the production of a power generation film for solar cells, about 52% is effectively consumed in the production of the power generation film, and about 48% is discarded as wasted (or harmful) power. is doing.
  • Non-Patent Documents 1 and 2 include an error, the existence of the power loss problem cannot be denied.
  • Non-Patent Document 3 Non-Patent Document 4, Patent Document 1, Patent Document 2, and Patent Document 3, a substrate heater that also serves as a ground electrode in a vacuum vessel, The ladder electrode and the back plate installed on the back side (viewed from the substrate heater side) of the ladder electrode are spaced apart from each other.
  • a ladder-type electrode is a structure in which two vertical bars having the same length are installed in one plane and connected between them by a plurality of horizontal bars having the same length.
  • the source gas may be ejected from the ladder-type electrode or from the back plate, both of which are converted into plasma by the ladder-type electrode, and a silicon-based film is formed on the substrate previously set on the substrate heater. Deposit.
  • the feeding point where the core wire of the coaxial cable that supplies power to the electrode and the non-grounded electrode is connected is set at the outer peripheral portion of the ladder electrode and at a point facing each other.
  • a power wave propagating as an electromagnetic wave (wave) from the feeding point propagates through the space between the ladder electrode and the substrate heater and the space between the ladder electrode and the back plate, and generates plasma in each of the spaces. That is, this apparatus is characterized in that plasma is generated on both sides of the ladder electrode.
  • the phase difference of the voltage of the power supplied from the feeding points facing each other is changed with time, for example, changed into a sine wave with a frequency of 1 KHz and supplied.
  • a standing wave that moves so as to reciprocate at a speed of, for example, 1 KHz between the feeding points facing each other.
  • uniform VHF plasma can be generated for a large area substrate having a substrate area of about 1 mx 1 m or more by the effect of the moving standing wave.
  • the electrode dimensions are 1.2 mx 1.5 m
  • the substrate area is 1.1 mx 1.4 m
  • the power frequency is 60 MHz
  • the distance between the ladder electrode and the substrate heater is 20 mm
  • the pressure is 45 Pa (0.338 Torr).
  • the film formation rate of amorphous Si is 1.7 nm / s, and the non-uniformity of the film is ⁇ 18%.
  • the electrode dimensions are 1.25mx1.55m (rod diameter: 10mm), the substrate area is 1.1mx1.4m, the power frequency is 60MHz, the voltage phase difference is 20KHz sine wave, ladder electrode and substrate Under the conditions of a heater interval of 20 mm and a pressure of 45 Pa (0.338 Torr), the amorphous Si film formation rate is 0.5 nm / s, and the non-uniformity of the film is ⁇ 15%.
  • Non-Patent Document 4 Patent Document 1, Patent Document 2, and Patent Document 3
  • power loss and other than between electrodes occur as shown below.
  • wasteful power consumption due to the electrodes and the power feeding method It is a double-sided discharge system that uses plasma generated on both sides of the ladder electrode, but in reality, the discharge on one side is used without setting a substrate on both sides.
  • the discharge on the other surface has a problem of ineffective discharge, that is, generation of unnecessary plasma.
  • the discharge on the other surface has a problem of ineffective discharge, that is, generation of unnecessary plasma.
  • the above-described double-sided discharge method that is, the method of setting substrates on both sides is actually difficult to control the stable generation of double-sided plasma. It seems that the device is not so adopted.
  • Second it is caused by the first problem, and has the problem of generation of powder and particles due to generation of unnecessary plasma. This problem is an important problem that causes troubles such as a reduction in the operating rate of the production line and a reduction in the performance of the power generation film to be produced.
  • a power distribution circuit used by a plurality of T-type coaxial connectors is used for a power transmission circuit that supplies power to the plurality of power supply points.
  • a power distribution circuit used by a plurality of T-type coaxial connectors is used for a power transmission circuit that supplies power to the plurality of power supply points.
  • seven T-type coaxial connectors are used for power feeding at one end of the ladder electrode and are branched into eight branches. In this branching means, power loss occurs at the connection between the coaxial cable and the T-type coaxial connector.
  • power loss occurs at the connection between the coaxial cable and the T-type coaxial connector.
  • Non-Patent Document 4 a power divider is used. Generally, when the number of branches of the power divider increases, the power loss inside the power divider is 10 to 15. It can be said that it is a numerical value that is a problem.
  • a first high-frequency power source of a pulse modulation system capable of arbitrarily setting the phase of the voltage of the output with two outputs, and the first high-frequency power source.
  • a second high frequency power source of a pulse modulation method that is transmitted in a time zone different from the output transmission time zone, has two outputs, and can arbitrarily set the phase of the voltage of the output, A uniform plasma is generated between a pair of electrodes by generating a standing wave and a second standing wave, and setting the antinode position of the two standing waves to a quarter of the wavelength.
  • the power supply is effectively used to form a high-quality crystalline i-layer film.
  • plasma is generated only between the ground electrode and the non-ground electrode on which the substrate is installed, and no harmful plasma is generated except between the pair of electrodes.
  • a balanced / unbalanced conversion device is installed between an impedance matching unit in a power supply circuit and a feeding point on the electrode, and the balanced / unbalanced conversion device and a pair of electrodes are connected.
  • the feeding points of the two coaxial cable outer conductors that are approximately equal in length are short-circuited at least at both ends, and each core wire at one end of the two coaxial cables is used as an input unit, Since each core wire at the other end is used as the output unit, it is possible to suppress leakage current, abnormal discharge, and the like in the power feeding unit, which are problems in the prior art. As a result, the power loss problem can be effectively solved.
  • the balanced transmission circuit described in Patent Document 5 has two coaxial cables that are connected to each other via a connection terminal (current introduction terminal) installed on the wall of the vacuum vessel. There is a problem that loss occurs.
  • Patent Document 5 there is no description about the power loss problem related to the connection between the coaxial cable arranged on the atmosphere side and the coaxial cable arranged on the vacuum side.
  • the specific technical problems of the conventional high-frequency plasma CVD technology field are, firstly, the generation of plasma only between a pair of electrodes while suppressing the occurrence of abnormal discharge, and having a large area and uniformization
  • the second is the creation of technology that can suppress power loss in the power transmission line.
  • the present invention enables high-speed, large-area, and uniform plasma surface treatment, suppresses the occurrence of abnormal discharge and the loss of power to be supplied, and applies plasma only between a pair of electrodes.
  • An object of the present invention is to create an idea of a technology that can be generated, and to provide a high-frequency plasma CVD apparatus and a plasma CVD method for realizing the idea.
  • the current introduction terminal includes a vacuum vessel (1) provided with an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel.
  • a plasma surface treatment apparatus comprising a power supply system comprising (40) and a substrate holding means (3) for arranging a substrate (11) to be plasma-treated, and treating the surface of the substrate using the generated plasma.
  • the current introduction terminal (40) to be used has two tubular conductors (60) that penetrate the wall of the vacuum vessel and are installed on the wall of the vacuum vessel, and are insulated from each other by a dielectric (63).
  • Rectangular plate conductor ie, first rectangular plate shape A body (61) and a second rectangular plate conductor (62), and the first rectangular plate conductor and the second rectangular plate conductor are placed inside the tubular conductor via a dielectric (64).
  • first rectangular plate conductor and the second rectangular plate conductor are placed inside the vacuum vessel, that is, on the vacuum side, and the other end is vacuumed Outside the container, that is, on the atmosphere side, one end (65) of the tubular conductor and a conductor earth shield box (66, 68) surrounding the balance-unbalance converter are brought into close contact with each other,
  • the first and second rectangular plate-shaped conductors have an air-side end portion as an input portion
  • the first and second rectangular plate-shaped conductors have a vacuum-side end portion as an output portion.
  • a current introduction terminal includes a vacuum vessel (1) provided with an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. And a pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, and the first and second standing waves that are independent of each other are superimposed on the pair of electrodes.
  • the distance between the antinode position of the first standing wave and the antinode position of the second standing wave is 0.22 to the wavelength ⁇ of the electromagnetic wave propagating through the generated plasma between the pair of electrodes.
  • a high frequency power source (25a, 25b, 24, 28a, 28b, 29a, 29b), an impedance matching unit (31a, 31b), and a balun device (33a) set to 0.28 times, that is, 0.22 to 0.28 ⁇ .
  • the vacuum container Two rectangular plate-like conductors having a tubular conductor (60) installed on the wall of the vacuum vessel and penetrating the walls of the vacuum vessel and insulated from each other by a dielectric (63), that is, a first rectangular plate-like shape It has a conductor (61) and a second rectangular plate conductor (62), and the first rectangular plate conductor and the second rectangular plate conductor are placed inside the tubular conductor via a dielectric (64).
  • One end in the length direction of the first rectangular plate conductor and the second rectangular plate conductor is placed inside the vacuum vessel, that is, on the vacuum side, and the other end is vacuumed It is arranged outside the container, that is, on the atmosphere side, and has one end (65 And a ground shield box (66, 68) made of a conductor surrounding the balance-unbalance conversion device, and the end portions on the atmosphere side of the first and second rectangular plate conductors are used as input portions, and the first The second rectangular plate-shaped conductor has a configuration in which an end portion on the vacuum side is used as an output portion.
  • a current introduction terminal is the current introduction terminal of the first or second aspect, wherein the dielectric constant of the dielectric (63) between the first and second rectangular plate conductors is A current introduction terminal characterized by being 3 or more.
  • a current introduction terminal according to a fourth aspect of the present invention is the current introduction terminal according to any one of the first to third aspects, wherein the first rectangular plate conductor (61) constituting the current introduction terminal (40) is provided. ) And the second rectangular plate conductor (62) are ungrounded.
  • a current introduction terminal according to a fifth aspect of the present invention is the current introduction terminal according to any one of the first to fourth aspects, wherein the first rectangular plate conductor (61) and the second rectangular plate conductor ( 62) is characterized in that the dielectric (63) interposed between them has a wedge shape.
  • a current introduction terminal according to a sixth aspect of the present invention is the current introduction terminal according to any one of the first to fourth aspects, wherein the characteristic impedance of the current introduction terminal (40) is from the input section to the output section. It is characterized in that the structure has a gradient type distribution that continuously decreases along.
  • a balanced transmission method is a vacuum vessel (1) having an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel.
  • a plasma surface treatment apparatus comprising a power supply system comprising (40) and a substrate holding means (3) for arranging a substrate (11) to be plasma-treated, and treating the surface of the substrate using the generated plasma.
  • the areas of the opposed surfaces of the pair of electrodes (2, 3) are substantially equal, and the pair of electrodes are installed in an ungrounded state, and the balanced / unbalanced conversion device (33) Output circuit and the pair of electrodes (2, ) To the power supply point (20, 21) installed at the current introduction terminal (40) of any one of the first to sixth inventions, and the output of the balance-unbalance conversion device (33) is the power It is transmitted to the supply points (20, 21).
  • a plasma surface treatment apparatus comprising: a vacuum vessel (1) having an exhaust system; and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ), A pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, a high-frequency power source (25), an impedance matching unit (31), a balance-unbalance conversion device (33), and current introduction
  • a plasma surface treatment apparatus comprising a power supply system comprising a terminal (40) and a substrate holding means (3) for arranging a substrate (11) to be plasma treated, and treating the surface of the substrate using the generated plasma
  • the pair of electrodes (2, 3) have substantially equal areas, and the pair of electrodes are installed in a non-grounded state, and the balance-unbalance conversion device ( 33) and the pair of power supplies
  • Power supply point (20, 21) is characterized by having a configuration that is connected in the first to sixth one of the current introducing terminals of the invention of (40).
  • the plasma surface treatment apparatus includes a vacuum vessel (1) having an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. And a pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, and the first and second standing waves that are independent of each other are superimposed on the pair of electrodes.
  • the distance between the antinode of the first standing wave and the antinode of the second standing wave is 0.22 to the wavelength ⁇ of the electromagnetic wave propagating through the generated plasma between the pair of electrodes.
  • a high frequency power source (25a, 25b, 24, 28a, 28b, 29a, 29b), an impedance matching unit (31a, 31b), and a balun device (33a) set to 0.28 times, that is, 0.22 to 0.28 ⁇ .
  • a plasma surface treatment apparatus comprises a vacuum vessel (1) having an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ), A pair of electrodes (2, 3) including first and second electrodes for generating plasma, a power supply point (20, 21) of the pair of electrodes, a high frequency power source (25), and impedance matching A substrate on which a device (31), a balance-unbalance conversion device (33), a power supply system comprising the current introduction terminal of any of the first to sixth inventions, and a substrate (11) to be plasma-processed are arranged A plasma surface treatment apparatus comprising a holding means (3) and treating the surface of the substrate using the generated plasma, wherein the power supply circuit for supplying power from the power supply system to the pair of electrodes is configured as follows: Down from the upstream side of the power flow, The high-frequency power source (25), the impedance matching unit (31), the balance-unbalance conversion device (33), the
  • a plasma surface treatment apparatus is a vacuum vessel (1) having an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ),
  • a pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, and first and second standing waves that are independent of each other are superimposed on the pair of electrodes.
  • the distance between the antinode of the first standing wave and the antinode of the second standing wave is 0.22 of the wavelength ⁇ of the electromagnetic wave propagating through the generated plasma between the pair of electrodes.
  • a high frequency power source (25a, 25b, 24, 28a, 28b, 29a, 29b), an impedance matching unit (31a, 31b), and a balance-unbalance converter (set to 0.28 times, that is, 0.22 to 0.28 ⁇ ) 33a, 33b) and the current introduction end of any of the first to sixth inventions
  • a plasma surface treatment apparatus for treating a surface of a substrate using generated plasma comprising: a power supply system comprising a child; and a substrate holding means for placing a substrate to be plasma treated.
  • the device configuration of the power supply circuit for supplying power to the electrodes of the high-frequency power supply, the impedance matching device, the balance-unbalance conversion device, the current introduction terminal, and the power supply point from the upstream side to the downstream side of the power flow It arranges in order.
  • a plasma surface treatment apparatus is the plasma surface treatment apparatus according to any one of the eighth to eleventh aspects, wherein the current introduction terminal (40) according to any one of the first to sixth aspects. And the power supply points (20, 21) are connected by flat conductors (70, 71).
  • a plasma surface treatment method comprises a vacuum vessel (1) provided with an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ), A pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, power supply points (20, 21) of the pair of electrodes, a high frequency power source (25), and an impedance matching device (31), a balance-unbalance conversion device (33), a power supply system comprising the current introduction terminal (40) of any one of the first to sixth inventions, and a substrate on which a substrate (11) to be plasma-processed is disposed. And a holding means (3) for processing the surface of the substrate using the generated plasma.
  • the apparatus constituting the power supply system is arranged from the upstream side to the downstream side of the power flow.
  • a plasma surface treatment method comprises a vacuum vessel (1) having an exhaust system, and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ), A pair of electrodes (2, 3) including first and second electrodes for generating plasma, a high-frequency power source (25), an impedance matching unit (31), a balance-unbalance conversion device (33), and the first A power supply system comprising the current introduction terminal according to any one of the first to sixth aspects of the present invention and a substrate holding means (3) for disposing a substrate (11) to be plasma-treated, and using the generated plasma, the substrate
  • the opposing surfaces of the pair of electrodes (2, 3) are substantially equal, and the pair of electrodes are installed in an ungrounded state, and the balance-unbalance conversion is performed.
  • the output of the device (33) Is transmitted to the power supply point of installation to the electrode through the introduction terminal (40) (20, 21
  • a vacuum vessel (1) having an exhaust system and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel.
  • a pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, power supply points (20, 21) of the pair of electrodes, and the pair of electrodes independent of each other
  • the first and second standing waves are superimposed on each other, and the distance between the antinode position of the first standing wave and the antinode position of the second standing wave is set between the pair of electrodes.
  • a high frequency power source (25a, 25b, 24, 28a, 28b, 29a, 29b) set to 0.22 to 0.28 times the wavelength ⁇ of the electromagnetic wave propagating inside the generated plasma, ie, 0.22 to 0.28 ⁇ ; Impedance matching units (31a, 31b), balance-unbalance conversion devices (33a, 33b), and A power supply system comprising the current introduction terminal according to any one of the first to sixth inventions and a substrate holding means (3) for disposing a substrate (11) to be plasma-treated, and using the generated plasma
  • the high-frequency power supplies (25a, 25b, 24, 28a, 28b, 29a) are arranged from the upstream side to the downstream side of the power flow. 29b), impedance matching device (31a, 31b), balance-unbalance conversion device (33a, 33b), current introduction terminal (40) and power supply point (20a, 20b, 21a, 21b)
  • a plasma surface treatment is performed.
  • a plasma surface treatment method comprising: a vacuum vessel (1) having an exhaust system; and a discharge gas supply system (6, 7, 8, 9) for supplying a discharge gas into the vacuum vessel. ), A pair of electrodes (2, 3) composed of first and second electrodes for generating plasma, and first and second standing waves that are independent of each other are superimposed on the pair of electrodes.
  • the distance between the antinode of the first standing wave and the antinode of the second standing wave is 0.22 of the wavelength ⁇ of the electromagnetic wave propagating through the generated plasma between the pair of electrodes.
  • a high frequency power source (25a, 25b, 24, 28a, 28b, 29a, 29b), an impedance matching unit (31a, 31b), and a balance-unbalance converter (set to 0.28 times, that is, 0.22 to 0.28 ⁇ ) 33a, 33b) and the current introduction end of any of the first to sixth inventions
  • a power supply system comprising a child and a substrate holding means (3) for disposing a substrate (11) to be plasma treated, and treating the surface of the substrate using the generated plasma.
  • the areas of the opposing surfaces of the pair of electrodes (2, 3) are substantially equal, and the pair of electrodes are installed in an ungrounded state, and the output of the balance-unbalance conversion device (33a, 33b) is the current introduction It is transmitted to a power supply point (20a, 20b, 21a, 21b) installed on the electrode through a terminal (40), and plasma surface treatment is performed.
  • a plasma surface treatment method according to a seventeenth aspect of the present invention is the plasma surface treatment method according to any one of the thirteenth to sixteenth aspects, wherein the two outputs of the balance-unbalance conversion device (33, 33a, 33b) The voltage phase difference is set to 180 °.
  • the present invention it is possible to supply electric power having a voltage phase difference of 180 ° to the feeding point of the pair of electrodes, that is, electric power having the same amplitude of the forward and return currents and a phase difference of 180 °. Therefore, in the plasma generation by the pair of electrodes, the abnormal discharge in the vicinity of the feeding point is suppressed almost completely. That is, according to the present invention, the phase difference of the voltage of the power is connected to the connection between the power supply point that is the power supply point to the electrode installed on the vacuum side and the balance-unbalance conversion device installed on the atmosphere side.
  • the connection between the power supply point that is the power supply point to the electrode installed on the vacuum side and the balance-unbalance conversion device installed on the atmosphere side Since it is possible to use a current introduction terminal that transmits power with a phase difference of 180 ° in the voltage while maintaining the phase difference, abnormal discharge (arcing) occurs near the power supply point
  • plasma is generated only between the pair of electrodes, and plasma generation outside the pair of electrodes can be suppressed.
  • generation of abnormal discharge (arcing) in the vicinity of the feeding point which is very difficult with the conventional technology, suppression of plasma generation other than between the pair of electrodes, and generation of uniform VHF plasma over a large area are achieved. hardly possible.
  • VHF plasma capable of processing a high-quality film at high speed can be applied to a field targeting a large area substrate.
  • the present invention can be used for production lines in fields such as the manufacture of integrated tandem thin film solar cell modules and the manufacture of various devices using microcrystalline silicon films, thereby improving productivity and yield.
  • the performance improvement effect is remarkably large.
  • the effect of reducing the manufacturing cost is remarkably large.
  • the specific technical problems of the conventional high-frequency plasma CVD technology field are, firstly, the generation of plasma only between a pair of electrodes while suppressing the occurrence of abnormal discharge, and having a large area and uniformization
  • the second is the creation of a technology that can be used, and the second is the creation of a technology that can suppress power loss in the power transmission line.
  • the present invention can solve the first problem, and the second problem also. A solution can be expected. This indicates that the effect of the present invention is remarkably great.
  • FIG. 1 is a schematic view showing an entire plasma surface treatment apparatus (plasma CVD apparatus) having a current introduction terminal according to the first embodiment of the present invention.
  • FIG. 2 is a schematic view showing the entire current introduction terminal according to the first embodiment of the present invention.
  • FIG. 3 is an explanatory diagram relating to a connection portion between a balance-unbalance converter, a current introduction terminal, and an electrode in the power supply system of the plasma surface treatment apparatus shown in FIG.
  • FIG. 4 is an explanatory diagram relating to the characteristic impedance of the current introduction terminal according to the first embodiment of the present invention.
  • FIG. 5 is a conceptual diagram showing a means for connecting a current introduction terminal and an electrode according to the second embodiment of the present invention.
  • FIG. 6 is an explanatory view showing a first specific example of the connection means between the current introduction terminal and the electrode according to the second embodiment of the present invention.
  • FIG. 7 is an explanatory view showing a second specific example of the connection means between the current introduction terminal and the electrode according to the second embodiment of the present invention.
  • FIG. 8 is a conceptual diagram showing a means for connecting a current introduction terminal and an electrode according to the third embodiment of the present invention.
  • Fig.9 (a) is explanatory drawing which shows the external appearance of the electric current introduction
  • FIG. 9B is an explanatory view showing the appearance of a current introduction terminal using a circular tube according to the third embodiment of the present invention.
  • FIG. 10 is a schematic view showing an entire plasma surface treatment apparatus (plasma CVD apparatus) having a current introduction terminal according to the fourth embodiment of the present invention.
  • FIG. 11 is an explanatory view showing a typical example of pulse-modulated output outputted from the first and second pulse modulation type variable-phase two-output transmitters shown in FIG. 12 is an explanatory view showing a typical example of a pulse-modulated sine wave signal output from the first and second pulse modulation type variable-phase two-output transmitters shown in FIG.
  • FIG. 13 is an explanatory diagram showing the intensity of two standing waves generated between a pair of electrodes in the plasma surface apparatus shown in FIG.
  • a current introduction terminal, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) having the current introduction terminal according to the first embodiment of the present invention will be described with reference to FIGS. I will explain.
  • FIG. 1 is a schematic view showing the entire plasma surface processing apparatus (plasma CVD apparatus) having a current introduction terminal according to the first embodiment of the present invention
  • FIG. 2 is a current introduction according to the first embodiment of the present invention
  • FIG. 3 is a schematic diagram showing the entire terminal
  • FIG. 3 is an explanatory diagram relating to a connection portion between a balance-unbalance converter, a current introduction terminal, and an electrode in the power supply system of the plasma surface treatment apparatus shown in FIG. 1, and FIG. It is explanatory drawing regarding the characteristic impedance of the current introduction terminal concerning the 1st Embodiment of this invention.
  • reference numeral 1 denotes a vacuum vessel.
  • the vacuum vessel 1 is provided with a pair of electrodes for converting a discharge gas to be described later into plasma, that is, a first non-grounded electrode 2 and a second non-grounded electrode 3, and a substrate heater 4.
  • the first non-grounded electrode 2 is installed in the vacuum vessel 1 via insulator supports 5a and 5b and a discharge gas mixing box 6 described later.
  • the second non-grounded electrode 3 is installed on the substrate heater 4 via insulator support members 5c and 5d.
  • the first and second non-grounded electrodes 2 and 3 are installed with the areas of the opposing surfaces being substantially equal.
  • the discharge gas mixing box 6 is used in combination with the rectifying plate 7, the gas supply pipe 8 and the first non-grounded electrode 2, and discharge gas is uniformly distributed between the first and second non-grounded electrodes from the gas ejection hole 9. To erupt.
  • the diameter of the gas ejection hole 9 is about 0.2 to 0.8 mm, for example 0.6 mm.
  • Reference numerals 10a and 10b are exhaust pipes, and the gas in the vacuum vessel 1 is discharged by a vacuum pump (not shown).
  • Reference numeral 11 denotes a substrate to be plasma-processed. The substrate 11 is placed on the second non-grounded electrode 3 by opening and closing a gate valve (not shown). Then, the substrate heater 4 is heated to a predetermined temperature.
  • the pressure in the vacuum vessel 1 is monitored by a pressure gauge (not shown), and is automatically adjusted and set to a predetermined value by a pressure adjustment valve (not shown).
  • a pressure gauge not shown
  • the pressure can be adjusted to about 0.01 Torr to 10 Torr (1.33 Pa to 1,330 Pa).
  • the ultimate pressure in the vacuum vessel 1 is about 2 to 3E-7 Torr (2.66 to 3.99E-5 Pa).
  • Reference numeral 25 denotes a high-frequency power source that generates power having a frequency of 30 MHz to 300 MHz (VHF band), for example, 60 MHz.
  • the high frequency power supply 25 adjusts and outputs an electric power of an arbitrary magnitude within an output range of 0.5 to 10 KW.
  • the output is supplied to the power supply points 20 and 21 of the pair of electrodes 2 and 3 via the coaxial cable 30, the impedance matching unit 31 described later, the coaxial cable 32, the balance-unbalance conversion device 33 described later, and the current introduction terminal 40 described later. To be supplied.
  • Reference numeral 33 denotes a balanced / unbalanced conversion device, for example, an LC bridge type balanced / unbalanced conversion device, which converts unbalanced transmission power input to this device into balanced transmission power.
  • balanced transmission power is a form of power transmission that is transmitted through two parallel lines called rehel lines used for TV and radio antennas, etc., and the amplitudes of the forward and return currents are equal and the phase is 180 °. It is characterized by being different.
  • Non-equilibrium transmission power is a form of power transmission that is transmitted using a coaxial cable, and a ground (vacuum container, parts built in a vacuum container, etc.) is used as a part of the transmission circuit, and the current of the forward and return paths is measured.
  • the phase is not 180 °.
  • the balance-unbalance converter used in the plasma surface treatment apparatus plasma CVD apparatus provided with the current introduction terminal of the first embodiment related to the present invention shown in FIG.
  • a super-top type balance / unbalance conversion device, a balance / unbalance conversion device using a branch conductor, and a balance / unbalance conversion device using a transformer may be used.
  • Reference numeral 40 is a current introduction terminal. As shown in FIGS. 2 and 3, the current introduction terminal 40 includes a tubular conductor 60, a flange 65, a first rectangular plate-shaped conductor 61, a second rectangular plate-shaped conductor 62, and a first dielectric 63. And a second dielectric 64.
  • a flange 65 used for joining to the vacuum vessel 1 is fixed to one end of the tubular conductor 60.
  • Connection terminals 61 a and 62 a used for connection to the first and second electrodes 2 and 3 are fixed to one end of the first and second rectangular plate-like conductors 61 and 62.
  • the balanced transmission circuit 40 is installed in the vacuum vessel 1 through the flange 65 of the tubular conductor 60 that constitutes the current introduction terminal 40. At this time, one end of the current introduction terminal 40 is installed on the atmosphere side and the other is installed on the vacuum side.
  • the vacuum container 1 and the current introduction terminal 40 are kept airtight by an O-ring.
  • the tubular conductor 60 is supported by the vacuum vessel 1 with a tubular conductor support conductor 67.
  • the current introduction terminal 40 outputs the output of the high frequency power supply 25 transmitted through the impedance matching unit 31 and the balance-unbalance conversion apparatus 33.
  • the balance-unbalance conversion device 33 is used to connect the first and second electrodes 2 and 3.
  • maintaining the phase difference between the two output voltages of the balance-unbalance conversion device 33 at 180 ° and supplying it to the first and second electrodes 2 and 3 is extremely important for preventing abnormal discharge. . Therefore, in FIG. 1 and FIG. 3, the step of confirming that the voltage phase difference between the two outputs of the balance-unbalance conversion device 33 is 180 ° using a voltage phase difference measuring device (not shown) described later is extremely is important.
  • the flange 65 on the atmosphere side of the current introduction terminal 40 is connected to a ground shield box 66 of the balance-unbalance conversion device 33 described later, and the power radiated from the electric circuit components inside the balance-unbalance conversion device 33 and The power radiated from the first and second rectangular plate conductors 61 and 62 of the current introduction terminal 40 is shielded.
  • the earth shield box 66 is a box that surrounds the balance-unbalance conversion device 33 with a conductor, and prevents leakage of electric power generated from the balance-unbalance conversion device 33.
  • One of the two outputs of the balun 33 is connected to a connection point 70 at the end of the first rectangular plate-shaped conductor 61 of the input portion of the current introduction terminal 40, and the other is connected to the input portion of the current introduction terminal 40.
  • the second rectangular plate conductor 62 is connected to the connection point 71 at the end.
  • An end portion 61 a of the first rectangular plate conductor at the output portion of the current introduction terminal 40 is connected to the first electrode 2.
  • the connection point between the end portion 61 a of the first rectangular plate-shaped conductor 61 and the first electrode 2 is referred to as a first power supply point 20.
  • the end portion 62 a of the second rectangular plate conductor 62 at the output portion of the current introduction terminal 40 is connected to the second electrode 3.
  • a connection point between the end portion 62 a of the second rectangular plate conductor and the second electrode 3 is referred to as a second power supply point 21.
  • the direction of the electric field of power propagating between the first and second rectangular plate conductors 61 and 62 constituting the current introduction terminal 40 is determined by the first and second rectangular plate conductors 61 and 62. Since it is in the normal direction of the surface, the power transmission form functions as a balanced transmission circuit. Here, the balanced transmission circuit and the balanced transmission line are used as the same meaning. Further, in this configuration, since the first and second rectangular plate conductors 61 and 62 are surrounded by the tubular conductor 60 and the earth shield 66, the first and second rectangular plate conductors 61 and 62 are separated from each other. There is no radiation to the atmosphere of the strong leakage electric field generated from the atmosphere.
  • the current introduction terminal 40 in addition to the function as the current introduction terminal, is an electric circuit as a balanced transmission circuit, like two parallel lines called Rehel lines. It has the function of. Due to this feature, in the application to the plasma surface treatment apparatus (plasma CVD apparatus) shown in FIG. 1, the amplitudes of the forward and return currents are equal and the phases are 180 ° different at the power supply points of the pair of electrodes 2 and 3. It is possible to supply power characterized by the above. As a result, plasma can be generated only between the pair of electrodes 2 and 3.
  • plasma CVD apparatus plasma CVD apparatus
  • the value of the characteristic impedance of the current introduction terminal 40 depends on the width W and interval h of the first and second rectangular plate conductors 61 and 62 and the relative dielectric constant of the dielectric therebetween.
  • a calculation method of the characteristic impedance value for example, several calculation formulas have been proposed in wireless engineering or transmission circuit science.
  • the characteristic impedance Z 0 ( ⁇ ) of the current introduction terminal 40 is evaluated by the following commonly used calculation formula.
  • Z 0 ( ⁇ ) 120 ⁇ / ⁇ 1/2 ⁇ W / h + 1.393 + 0.667ln (W / h + 1.444) ⁇ (1)
  • Z 0 ( ⁇ ) is the characteristic impedance of the flat plate transmission line
  • ⁇ is the relative dielectric constant
  • W is the width of the flat plate (m)
  • h is the distance (m) between the two flat plates.
  • FIG. 4 shows the value of the characteristic impedance of the current introduction terminal 40 calculated using the formula (1) of the characteristic impedance Z 0 ( ⁇ ).
  • the relative dielectric constant ⁇ is 3, 6.5 and 10.
  • high-purity alumina having a relative dielectric constant ⁇ about 10 is used. Then, the following three current introduction terminals 40 are prepared.
  • Second current introduction terminal 40b Second current introduction terminal 40b...
  • the relative dielectric constants of the first and second rectangular plate conductors 61 and 62 may generally be selected from arbitrary values, but if the relative dielectric constant is small, the first and second rectangular dielectric conductors 61 and 62 may be selected. As a result, the dimension of the current introduction terminal 40 is increased. In order to design the outer dimension of the tubular conductor 60 of the current introduction terminal 40 within about 15 cm, a relative dielectric constant of 3 or more is practical.
  • a characteristic selection test (referred to as a selection process) of the current introduction terminal 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration will be described.
  • a selection process a characteristic selection test (referred to as a selection process) of the current introduction terminal 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration.
  • a selection process a characteristic selection test (referred to as a selection process) of the current introduction terminal 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration.
  • the film formation conditions for amorphous Si are as follows.
  • a balanced transmission circuit suitable for the film formation conditions of the amorphous Si is selected.
  • a current introduction terminal that can match the distance between the electrodes 2 and 3 under the above-described amorphous Si film forming condition 2.5 cm, the distance between the first and second rectangular plate conductors 61 and 62 is 2.
  • the first current introduction terminal 40a having the characteristic of 0 about 30 ⁇ must be selected.
  • the process proceeds to the film forming process.
  • the substrate 11 is previously set on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • high-frequency power for example, power at a frequency of 60 MHz, for example, 800 W is supplied to the pair of electrodes 2 and 3.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is passed through the coaxial cable 30, the impedance matching unit 31, the coaxial cable 32, the balance-unbalance conversion device 33, and the current introduction terminal 40a. Then, the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • impedance matching with a load made of plasma generated between the electrodes 2 and 3 is not good, a certain amount of reflected wave returns.
  • it is about 1 to 5%, that is, about 8 to 40 W with respect to the output 800 W of the high frequency power supply 31.
  • the phase difference of the voltage of the output of the balun 33 is 180 degrees at the input portion of the current introduction terminal 40, that is, at the end of the first and second rectangular plate conductors 61 and 62 on the atmosphere side.
  • the pair of electrodes 2 and 3 are Since it has the same electrical characteristics as a balanced transmission line similar to the current introduction terminal 40, the occurrence of leakage current is suppressed. As a result, no abnormal discharge or local discharge occurs. Furthermore, as described above, since the phase difference between the voltages applied to the power supply points 20 and 21 is 180 degrees, that is, since a positive and negative voltage is applied to the pair of electrodes, the electrodes 2 and 3 There is no generation of plasma outside the gap. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and wiring situation around the pair of electrodes, which is a problem in the prior art, and stable plasma generation with high reproducibility is possible.
  • the impedance matching device 31 is arranged downstream of the balance-unbalance conversion device 33, that is, between the balance-unbalance conversion device 33 and the balanced transmission circuit 40, the LC built-in in the impedance matching device 31 is provided. Since the circuit is adjusted for impedance matching between the load, the power source, and the transmission path, the phase difference of the voltage applied to the current introduction terminal 40 cannot be secured at 180 degrees. Therefore, it is important that the place where the impedance matching device 31 is disposed is upstream of the balance-unbalance conversion device 33.
  • a-Si having a film forming speed of 1 nm / s and a film thickness distribution of ⁇ 10% is formed on a glass substrate 11 having a size of about 700 mm ⁇ 50 mm (thickness 3 mm).
  • the film forming conditions are as follows. (Film forming conditions) ⁇ Discharge gas: SiH4, ⁇ Flow rate: 500sccm, ⁇ Pressure: 0.5 Torr (66.5 Pa), ⁇ Electrode size: 70cm x 5cm, ⁇ Electrode spacing: 2.5cm, ⁇ Power supply frequency: 60 MHz ⁇ Power: 800W -Substrate temperature: 180 ° C.
  • the output of the high frequency power supply 25 is transmitted to the balance / unbalance conversion device 33 via the coaxial cable 30 and the impedance matching unit 31 which are unbalanced transmission circuits, and the transmitted power is balanced. Since it can be converted into balanced power by the unbalanced converter 33 and supplied to the power supply points 20 and 21 of the pair of electrodes 2 and 3 through the current introduction terminal 40 having the characteristics of a balanced transmission circuit, the power supply system and the load Transmission characteristics at a connection portion between a pair of electrodes 2 and 3 are matched, and generation of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma is uniform with good reproducibility compared to the conventional case. As a result, the film thickness distribution of the a-Si film to be formed becomes uniform with good reproducibility compared to the conventional case. Numerically, film formation is possible when the a-Si film thickness distribution is within ⁇ 10%.
  • a balanced transmission circuit (or balanced transmission line) is a transmission form in which a current flowing through both lines is equal in amplitude and phase is 180 ° different in a power transmission circuit composed of two conductors. It is.
  • the LC bridge type unbalanced conversion device used in this embodiment is means for converting the power transmission of the unbalanced transmission method input to the device into the balanced transmission method.
  • a super-top type balance-unbalance converter, a half-wavelength bypass type balance-unbalance converter, and the like can be used.
  • a device combining a power distributor and a phase shifter can be used.
  • the substrate size is limited to about 700 mm ⁇ 50 mm.
  • the width of the size is increased. It is natural that it can be expanded.
  • a plurality of pairs of electrodes are installed and a plurality of the above-described power supply systems are arranged according to the number of the electrodes, it is natural that the width of the substrate size can be expanded.
  • a current introduction terminal, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) having the current introduction terminal according to the second embodiment of the present invention will be described with reference to FIGS. I will explain. 1 to 4 will be referred to if necessary.
  • FIG. 5 is a conceptual diagram showing a current introducing terminal and electrode connecting means according to the second embodiment of the present invention
  • FIG. 6 is a first of the current introducing terminal and electrode connecting means according to the second embodiment of the present invention.
  • FIG. 7 and FIG. 7 are explanatory views showing a second specific example of the means for connecting the current introduction terminal and the electrode according to the second embodiment of the present invention.
  • reference numeral 72 denotes a first connecting conductor plate, which is a conductor plate that electrically connects the first electrode 2 and the first rectangular plate conductor 61.
  • Reference numeral 73 denotes a second connecting conductor plate, which is a conductor plate that electrically connects the second electrode 3 and the second rectangular plate-shaped conductor 62.
  • the first and second connection conductor plates 72 and 73 are respectively the vacuum side end portions of the first and second rectangular plate-like conductors 61 and 62 that are output portions of the current introduction terminal 40, and the first and second connection conductor plates 72 and 73, respectively.
  • the feeding points 20 and 21 of the two electrodes are connected.
  • the output of the high-frequency power supply 25 can be supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 via the impedance matching unit 31, the balance-unbalance conversion device 33, and the current introduction terminal 40. it can.
  • the first and second connecting conductor plates 72 and 73 are made of thin conductor plates, so that the distance between the first and second rectangular plate-shaped conductors 61 and 62 and the first and second electrodes 2 are reduced.
  • the 1st and 2nd rectangular plate-shaped conductor 61 is used by using the 1st and 2nd connection conductors 72a and 73a made from the triangular thin conductor board by which the vertex was cut as shown in FIG. , 62 and the widths of the first and second electrodes 2 and 3 can be easily connected to each other. Further, when the widths of the first and second electrodes 2 and 3 are wider than the widths of the first and second rectangular plate-like conductors 61 and 62, as will be described later, plasma for a large area substrate is used. Application of surface treatment becomes possible. In FIG.
  • reference numerals 72 b and 73 b are second specific examples of the first and second connection conductors 72 and 73, and the long sides of the triangular thin conductor plates with the vertices cut off are the first and second.
  • the short side is connected to the first and second rectangular plate conductors 61 and 62.
  • a metal for example, SUS304.
  • the 1st and 2nd rectangular plate-shaped conductor 61 is used by using the 1st and 2nd connection conductors 72b and 73b made from the triangular thin conductor board by which the vertex was cut as shown in FIG. , 62 and the widths of the first and second electrodes 2 and 3 can be easily connected to each other. Further, when the widths of the first and second electrodes 2 and 3 are wider than the widths of the first and second rectangular plate-like conductors 61 and 62, as will be described later, plasma for a large area substrate is used. Application of surface treatment becomes possible.
  • a characteristic selection test (referred to as a selection process) of the balanced transmission circuit 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration will be described.
  • a selection process a characteristic selection test (referred to as a selection process) of the balanced transmission circuit 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration.
  • a selection process a characteristic selection test (referred to as a selection process) of the balanced transmission circuit 40 that is performed in advance when the amorphous Si for an a-Si solar cell is formed using the plasma surface treatment apparatus having the above-described configuration.
  • one suitable for the following amorphous Si film forming conditions is selected from the three current introduction terminals 40a, 40b, and 40c.
  • the film formation conditions for amorphous Si are as follows.
  • the substrate 11 is previously placed on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then the SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is a coaxial cable 30, impedance matching unit 31, coaxial cable 32, unbalance conversion device 33, and current introduction terminal as a current introduction terminal 40.
  • the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 through 40a.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • the reflected wave in the case of the first balanced transmission circuit 40a is 30 W with respect to the output 800 W of the high frequency power supply 31, for example.
  • the phase difference of the output voltage of the balun 33 is 180 degrees at the input part of the current introduction terminal 40a, that is, at the end of the first and second rectangular plate conductors 61 and 62 on the atmosphere side. This is monitored by a voltage measuring device (not shown).
  • Leakage current generated by the main cause of abnormal discharge in the vicinity of the feeding points 20 and 21 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the pair of electrodes 2 and 3 are Since it has the same electrical characteristics as a balanced transmission line similar to the current introduction terminal 40, the occurrence of leakage current is suppressed. As a result, no abnormal discharge or local discharge occurs. Furthermore, as described above, since the phase difference between the voltages applied to the power supply points 20 and 21 is 180 degrees, that is, in a state where positive and negative voltages are applied to the pair of electrodes, There is no generation of plasma except between three. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and wiring situation around the pair of electrodes, which is a problem in the prior art, and stable plasma generation with high reproducibility is possible.
  • the impedance matching device 31 is arranged downstream of the balance-unbalance conversion device 33, that is, between the balance-unbalance conversion device 33 and the current introduction terminal 40, an LC built in the impedance matching device 31 is provided. Since the circuit is adjusted for impedance matching between the load, the power source, and the transmission path, the phase difference of the voltage applied to the current introduction terminal 40 cannot be secured at 180 degrees. Therefore, it is important that the location where the impedance matching device 31 is disposed is upstream of the balance-unbalance conversion device 18. That is, the device configuration of the power supply circuit from the high-frequency power source 25 to the power feeding points 20 and 21 of the pair of electrodes is from the upstream side to the downstream side of the power flow. Arranging in the order of the converter, the current introduction terminal, and the power supply point is important in order to ensure a voltage phase difference of 180 °.
  • the length of the first and second rectangular plate-like conductors 61, 62 14 cm
  • the width W 5 cm (thickness 3 mm)
  • the distance h 1 cm, that is, W
  • the substrate 11 is previously placed on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then the SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is used as the coaxial cable 30, the impedance matching unit 31, the coaxial cable 32, the balun 33, and the current introduction terminal 40.
  • the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 through the current introduction terminal 40b.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • the reflected wave in the case of the first balanced transmission circuit 40b is 20 W with respect to the output 800 W of the high frequency power supply 31, for example.
  • the phase difference of the voltage of the output of the balun 33 is 180 degrees at the input part of the current introduction terminal 40b, that is, at the end of the first and second rectangular plate conductors 61 and 62 on the atmosphere side. This is monitored by a voltage measuring device (not shown).
  • Leakage current generated by the main cause of abnormal discharge in the vicinity of the feeding points 20 and 21 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the length of the first and second rectangular plate conductors 61, 62 14 cm
  • the width W 5 cm (thickness 3 mm)
  • the distance h 0.5 cm
  • the substrate 11 is previously placed on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then the SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is used as the coaxial cable 30, the impedance matching unit 31, the coaxial cable 32, the balun 33, and the current introduction terminal 40.
  • the current is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 through the current introduction terminal 40c.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • Leakage current generated by the main cause of abnormal discharge in the vicinity of the feeding points 20 and 21 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the magnitude of the reflected wave is 30W at the current introduction terminal 40a, 20W at the current introduction terminal 40b, and 25W at the current introduction terminal 40c.
  • a current introduction terminal 40b that can create a condition with the least number of reflected waves is selected.
  • the process proceeds to the film forming process.
  • the current introduction terminal 40 As the current introduction terminal 40, the current introduction terminal 40b which is the best in suppressing reflected waves with respect to the amorphous Si film forming condition is adopted.
  • the substrate 11 is previously set on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • high-frequency power for example, power at a frequency of 60 MHz, for example, 800 W is supplied to the pair of electrodes 2 and 3.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is the coaxial cable 30, impedance matching unit 31, coaxial cable 32, balun
  • the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 via 40b.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • Leakage current generated by the main cause of abnormal discharge in the vicinity of the feeding points 20 and 21 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the pair of electrodes 2 and 3 are Since it has the same electrical characteristics as a balanced transmission line similar to the current introduction terminal 40, the occurrence of leakage current is suppressed. As a result, no abnormal discharge or local discharge occurs. Furthermore, as described above, the phase difference between the voltages applied to the power supply points 20 and 21 is 180 °, that is, since a positive and negative voltage is applied to the pair of electrodes, the electrodes 2 and 3 There is no generation of plasma outside the gap. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and wiring situation around the pair of electrodes, which is a problem in the prior art, and stable plasma generation with high reproducibility is possible.
  • the impedance matching device 31 is arranged downstream of the balance-unbalance conversion device 33, that is, between the balance-unbalance conversion device 33 and the current introduction terminal 40, the LC built-in in the impedance matching device 31 is provided. Since the circuit is adjusted for impedance matching between the load, the power source, and the transmission path, the phase difference of the voltage applied to the current introduction terminal 40 cannot be secured at 180 °. Therefore, it is important that the place where the impedance matching device 31 is disposed is upstream of the balance-unbalance conversion device 33.
  • Film formation of a-Si having a film forming speed of 1 nm / s and a film thickness distribution of ⁇ 10% is performed on a glass substrate 11 having a size of about 700 mm ⁇ 300 mm (thickness 3 mm).
  • the film forming conditions are as follows. (Film forming conditions) ⁇ Discharge gas: SiH4, ⁇ Flow rate: 500sccm, ⁇ Pressure: 0.5 Torr (66.5 Pa), ⁇ Electrode size: 70cm x 30cm, ⁇ Electrode spacing: 2.5cm, Connection of electrodes and current introduction terminals: first and second connection conductors 70a, 71a, ⁇ Power supply frequency: 60 MHz ⁇ Power: 800W -Substrate temperature: 180 ° C.
  • the output of the high-frequency power supply 25 is transmitted to the balance-unbalance conversion device 33 via the coaxial cable 30 and the impedance matching unit 31 which are unbalanced transmission circuits, and the transmitted power is balanced. Since it is converted into balanced power by the unbalanced converter 33 and can be supplied to the power supply points 20 and 21 of the pair of electrodes 2 and 3 through the current introduction terminal 40 having the characteristics of a balanced transmission circuit, the power supply system and the load Transmission characteristics at a connection portion with a certain pair of electrodes are matched, and generation of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma is uniform with good reproducibility compared to the conventional case. As a result, the film thickness distribution of the a-Si film to be formed becomes uniform with good reproducibility compared to the conventional case. Numerically, film formation is possible when the a-Si film thickness distribution is within ⁇ 10%.
  • a balanced transmission circuit (or balanced transmission line) is a transmission form in which a current flowing through both lines is equal in amplitude and phase is 180 ° different in a power transmission circuit composed of two conductors. It is.
  • the LC bridge type unbalanced conversion device used in this embodiment is means for converting the power transmission of the unbalanced transmission method input to the device into the balanced transmission method.
  • a super-top type balance-unbalance converter, a half-wavelength bypass type balance-unbalance converter, and the like can be used.
  • a device combining a power distributor and a phase shifter can be used.
  • the substrate size is limited to about 700 mm ⁇ 300 mm, but if the number of feeding points is increased, the width of the size becomes It is natural that it can be expanded.
  • the width of the substrate size can be expanded.
  • FIG. 1 is referred as needed.
  • FIG. 8 is a conceptual diagram showing the connection means between the current introduction terminal and the electrode according to the third embodiment of the present invention
  • FIG. 9A is a current introduction using a rectangular tube according to the third embodiment of the present invention
  • FIG. 9B is an explanatory view showing the external appearance of the terminal
  • FIG. 9B is an explanatory view showing the external appearance of the current introduction terminal using the circular tube according to the third embodiment of the present invention.
  • reference numeral 400 denotes a current introduction terminal provided with a tubular conductor having a rectangular cross-sectional shape.
  • the current introduction terminal 400 includes a rectangular tubular conductor 60a, a flange 65a, a first rectangular plate conductor 61a, a second rectangular plate conductor 62a, and a first rectangular conductor 60a. It consists of a dielectric 63a and a second dielectric 64a.
  • alumina having a relative dielectric constant of 10 is used.
  • a flange 65a used for joining to the vacuum vessel 1 is fixed to one end of the tubular conductor 60a.
  • connection conductors 72a and 73a used for connection to the first and second electrodes 2 and 3 are fixed to one end portions of the first and second rectangular plate conductors 61a and 62a. .
  • the current introduction terminal 400 is installed in the vacuum vessel 1 through the flange 65 a of the tubular conductor 60 a constituting the current introduction terminal 400. At this time, the current introduction terminal 400 is installed so that one end is on the atmosphere side and the other is on the vacuum side. The space between the vacuum vessel 1 and the flange 65a of the current introduction terminal 400 is kept airtight by an O-ring.
  • the tubular conductor 60 a is supported by the vacuum vessel 1 with a tubular conductor support conductor 67.
  • the distance h at both ends of the first rectangular plate-shaped conductor 61a and the second rectangular plate-shaped conductor 62a is set to a different value. That is, the first dielectric 63a in the first rectangular plate conductor 61a and the second rectangular plate conductor 62a has a wedge shape.
  • the length of the rectangular tubular conductor 60a is 10 cm
  • the cross-sectional arrangement of the first rectangular plate-shaped conductor 61a and the second rectangular plate-shaped conductor 62a at the end on the atmosphere side is as follows.
  • Distribution that is, a current introduction terminal having a tapered distribution.
  • the length of the rectangular tubular conductor 60a is 10 cm
  • the cross-sectional arrangement of the first rectangular plate-shaped conductor 61a and the second rectangular plate-shaped conductor 62a at the end on the atmosphere side is as follows.
  • the length of the first and second rectangular plate-like conductors 61 and 62 is 14 cm
  • the width W 5 cm (thickness 3 mm)
  • the distance h 2.
  • reference numeral 401 denotes a current introduction terminal provided with a tubular conductor having a circular cross-sectional shape.
  • the current introduction terminal 401 (here, the balanced transmission circuit and the balanced transmission line are used as the same meaning) has a circular tubular conductor 60b, a flange 65b, and a first rectangular plate shape.
  • a conductor 61b, a second rectangular plate conductor 62b, a first dielectric 63b, and a second dielectric 64b are included.
  • alumina having a relative dielectric constant of 10 is used.
  • a flange 65b used for joining to the vacuum vessel 1 is fixed to one end of the tubular conductor 60b.
  • connection conductors 72a and 73a used for connection to the first and second electrodes 2 and 3 are fixed to one end portions of the first and second rectangular plate conductors 61b and 62b. .
  • the current introduction terminal 401 is installed in the vacuum vessel 1 through the flange 65 b of the tubular conductor 60 b constituting the current introduction terminal 401. At this time, one end of the current introduction terminal 401 is installed on the atmosphere side, and the other is installed on the vacuum side.
  • the space between the vacuum vessel 1 and the flange 65b of the current introduction terminal 401 is kept airtight by an O-ring.
  • the tubular conductor 60 b is supported on the vacuum vessel 1 by a tubular conductor support conductor 67.
  • the distance h at both ends of the first rectangular plate conductor 61b and the second rectangular plate conductor 62b is set to a different value. That is, the first dielectric 63b located between the first rectangular plate conductor 61b and the second rectangular plate conductor 62b has a wedge shape.
  • the length of the circular tubular conductor 60b is 10 cm, and the cross-sectional arrangement of the first rectangular plate-shaped conductor 61b and the second rectangular plate-shaped conductor 62b at the end on the atmosphere side
  • the circular tubular conductor 60a has a length of 10 cm
  • the cross-sectional arrangement of the first rectangular plate conductor 61b and the second rectangular plate conductor 62b at the end on the atmosphere side is as follows.
  • the length of the first and second rectangular plate conductors 61b, 62b 14 cm
  • the width W 5 cm (thickness 3 mm)
  • Distribution that is, a balanced transmission circuit having a tapered distribution.
  • the current introduction terminal 40 including the tubular conductor having the rectangular cross section and the current introduction terminal including the tubular conductor having the circular cross section are used.
  • the former will be described as an example.
  • the current introduction terminal 400 having a tubular conductor having a rectangular cross-sectional shape is suitable for the following amorphous Si film formation conditions from the first specific example and the second specific example. Select one.
  • the characteristic impedance Z 0 at the input part of the current introduction terminal 400 is about 30 ⁇
  • the characteristic impedance Z 0 is a current introduction terminal whose characteristic impedance having a characteristic of about 15 ⁇ is a tapered distribution.
  • the characteristic impedance Z 0 at the input portion of the current introduction terminal 400 is about 30 ⁇
  • the film formation conditions for amorphous Si are as follows.
  • the current introduction terminal 400 in the case of the first specific example is installed. That is, the current introduction terminal having a characteristic distribution in which the characteristic impedance Z 0 at the input portion of the current introduction terminal 400 is about 30 ⁇ and the characteristic impedance Z 0 at the output portion is about 15 ⁇ is a taper type distribution. .
  • the substrate 11 is previously placed on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then the SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is a coaxial cable 30, impedance matching unit 31, coaxial cable 32, unbalance conversion device 33, and current introduction terminal as a current introduction terminal 40.
  • the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 via 400.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • the output of the balance-unbalance conversion device 33 at the input portion of the current introduction terminal 400 in the case of the first specific example that is, the end portions on the atmosphere side of the first and second rectangular plate conductors 61a and 62a.
  • the fact that the voltage phase difference is 180 ° is monitored by a voltage measuring device (not shown).
  • a voltage measuring device not shown.
  • plasma of SiH 4 gas is generated between the pair of electrodes 2 and 3.
  • the pair of electrodes 2 and 3 have substantially the same area and are not grounded, and the power is different from the feed points 20 and 21 by a voltage phase difference of 180 °, that is, the forward path. Since electric power having the same return current amplitude and a phase difference of 180 ° is supplied, abnormal discharge in the vicinity of the feeding points 20 and 21 is almost completely suppressed.
  • the pair of electrodes 2 and 3 have the same electrical characteristics as the balanced transmission line as the current introduction terminal 40, so that the occurrence of leakage current is suppressed. As a result, no abnormal discharge or local discharge occurs.
  • the phase difference between the voltages applied to the power supply points 20 and 21 is 180 °, that is, since a positive and negative voltage is applied to the pair of electrodes, the electrodes 2 and 3 There is no generation of plasma outside the gap. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and wiring situation around the pair of electrodes, which is a problem in the prior art, and stable plasma generation with high reproducibility is possible.
  • the impedance matching device 31 when the impedance matching device 31 is arranged downstream of the balance-unbalance conversion device 33, that is, between the balance-unbalance conversion device 33 and the current introduction terminal 400, the impedance matching device 31 has a built-in LC. Since the circuit is adjusted for impedance matching between the load, the power source, and the transmission path, the phase difference of the voltage applied to the current introduction terminal 400 cannot be secured at 180 degrees. Therefore, it is important that the place where the impedance matching device 31 is disposed is upstream of the balance-unbalance conversion device 33. That is, the device configuration of the power supply circuit from the high-frequency power source 25 to the power feeding points 20 and 21 of the pair of electrodes is from the upstream side to the downstream side of the power flow. Arranging in the order of the converter, the current introduction terminal, and the power supply point is important in order to ensure a voltage phase difference of 180 degrees.
  • the current introduction terminal 401 in the case of the second specific example is installed in FIGS.
  • a current introduction terminal having a characteristic impedance taper type distribution in which the characteristic impedance Z 0 at the input portion of the current introduction terminal 401 is about 30 ⁇ and the characteristic impedance Z 0 at the output portion is about 10 ⁇ is installed.
  • the substrate 11 is previously placed on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then the SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is the coaxial cable 30, the impedance matching unit 31, the coaxial cable 32, the balance-unbalance conversion device 33, and the current introduction terminal.
  • the power is supplied to the feeding points 20 and 21 of the first and second electrodes 2 and 3 via 401.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • phase difference of the voltage is 180 ° is monitored by a voltage measuring device (not shown).
  • a voltage measuring device not shown.
  • plasma of SiH 4 gas is generated between the pair of electrodes 2 and 3.
  • the pair of electrodes 2 and 3 have substantially the same area and are not grounded, and the power is different from the feed points 20 and 21 by a voltage phase difference of 180 °, that is, the forward path. Since electric power having the same return current amplitude and a phase difference of 180 ° is supplied, abnormal discharge in the vicinity of the feeding points 20 and 21 is almost completely suppressed.
  • the magnitude of the reflected wave is 30 W in the case of the first specific example 400 and 20 W in the case of the second specific example 401.
  • the current introduction terminal 400 in the case of the second specific example 401 capable of creating a condition with few reflected waves is selected.
  • the process proceeds to the film forming process.
  • the current introduction terminal 40 the current introduction terminal 401 in the case of the second specific example which is the best in terms of suppression of reflected waves with respect to the amorphous Si film forming condition is adopted.
  • the substrate 11 is previously set on the second non-grounded electrode 3 and a vacuum pump (not shown) is operated to remove impurity gas and the like in the vacuum vessel 1, and then SiH 4 gas is discharged from the discharge gas supply pipe 8.
  • high-frequency power for example, power at a frequency of 60 MHz, for example, 800 W is supplied to the pair of electrodes 2 and 3.
  • the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the output of the high frequency power supply 25 is set to 800 W at 60 MHz, for example, and the output is the coaxial cable 30, the impedance matching unit 31, the coaxial cable 32, the balance-unbalance conversion device 33, and the second.
  • the power supply points 20 and 21 of the first and second electrodes 2 and 3 are supplied via the current introduction terminal 401 of the specific example.
  • the LC adjuster of the impedance matching unit 31 and the traveling wave and reflected wave power value monitors attached to the high-frequency power source 31 are used in combination to reflect the supplied power on the upstream side of the impedance matching unit 31. You can prevent the waves from returning.
  • it is the same as the result of the selection step, and is about 20 W with respect to the output 800 W of the high frequency power supply 31.
  • the phase difference of the voltage of the output of the balun 33 is 180 ° at the input portion of the current introduction terminal 401, that is, at the end of the first and second rectangular plate conductors 61a and 62a on the atmosphere side. This is monitored by a voltage measuring device (not shown).
  • Leakage current generated by the main cause of abnormal discharge in the vicinity of the feeding points 20 and 21 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the pair of electrodes 2 and 3 are Since it has the same electrical characteristics as a balanced transmission line as the current introduction terminal 401, the occurrence of leakage current is suppressed. As a result, no abnormal discharge or local discharge occurs. Furthermore, as described above, the phase difference between the voltages applied to the power supply points 20 and 21 is 180 °, that is, since a positive and negative voltage is applied to the pair of electrodes, the electrodes 2 and 3 There is no generation of plasma outside the gap. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and wiring situation around the pair of electrodes, which is a problem in the prior art, and stable plasma generation with high reproducibility is possible.
  • the impedance matching device 31 when the impedance matching device 31 is arranged downstream of the balance-unbalance conversion device 33, that is, between the balance-unbalance conversion device 33 and the current introduction terminal 401, the impedance matching device 31 has a built-in LC. Since the circuit is adjusted for impedance matching between the load, the power source, and the transmission path, the phase difference of the voltage applied to the balanced transmission circuit 40 cannot be secured at 180 °. Therefore, it is important that the place where the impedance matching device 31 is disposed is upstream of the balance-unbalance conversion device 33.
  • Film formation of a-Si having a film forming speed of 1 nm / s and a film thickness distribution of ⁇ 10% is performed on a glass substrate 11 having a size of about 700 mm ⁇ 300 mm (thickness 3 mm).
  • the film forming conditions are as follows. (Film forming conditions) ⁇ Discharge gas: SiH4, ⁇ Flow rate: 500sccm, ⁇ Pressure: 0.5 Torr (66.5 Pa), ⁇ Electrode size: 70cm x 30cm, ⁇ Electrode spacing: 2.5cm, Connection of electrodes and current introduction terminals: first and second connection conductors 72a, 73a, ⁇ Power supply frequency: 60 MHz ⁇ Power: 800W -Substrate temperature: 180 ° C.
  • the output of the high frequency power supply 25 is transmitted to the balance / unbalance conversion device 33 via the coaxial cable 30 and the impedance matching unit 31 which are unbalanced transmission circuits, and the transmitted power is balanced. Since it can be converted into balanced power by the unbalanced converter 33 and supplied to the power supply points 20 and 21 of the pair of electrodes 2 and 3 via the current introduction terminal 401 of the balanced transmission circuit, a pair of power supply system and load Transmission characteristics at the connection with the electrode are matched, and the occurrence of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma is uniform with good reproducibility compared to the conventional case. As a result, the film thickness distribution of the a-Si film to be formed becomes uniform with good reproducibility compared to the conventional case. Numerically, film formation is possible when the a-Si film thickness distribution is within ⁇ 10%.
  • a balanced transmission circuit (or balanced transmission line) is a transmission form in which a current flowing through both lines is equal in amplitude and phase is 180 ° different in a power transmission circuit composed of two conductors. It is.
  • the LC bridge type unbalanced conversion device used in this embodiment is means for converting the power transmission of the unbalanced transmission method input to the device into the balanced transmission method.
  • a super-top type balance-unbalance converter, a half-wavelength bypass type balance-unbalance converter, and the like can be used.
  • a device combining a power distributor and a phase shifter can be used.
  • the substrate size is limited to about 700 mm ⁇ 300 mm, but if the number of feeding points is increased, the width of the size becomes It is natural that it can be expanded.
  • the width of the substrate size can be expanded.
  • a current introduction terminal, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) having the current introduction terminal according to the fourth embodiment of the present invention will be described with reference to FIGS. I will explain. Further, FIG. 2 to FIG. 4 and FIG. 6 are referred to as necessary.
  • FIG. 10 is a schematic view showing an entire plasma surface treatment apparatus (plasma CVD apparatus) having a current introduction terminal according to the fourth embodiment of the present invention
  • FIG. 11 is a first and second pulse modulation shown in FIG.
  • FIG. 12 is an explanatory diagram showing a typical example of pulse-modulated output outputted from the system phase variable 2 output oscillator, and FIG. 12 is outputted from the first and second pulse modulation system phase variable 2 output oscillators shown in FIG.
  • FIG. 13 is an explanatory diagram showing the intensity of two standing waves generated between a pair of electrodes in the plasma surface device shown in FIG.
  • reference numeral 25a denotes a first pulse modulation type phase variable 2-output transmitter that generates a sine wave signal having an arbitrary frequency of 30 MHz to 300 MHz (VHF band), for example, 60 MHz, and the sine It is possible to arbitrarily set the phase difference between two pulse-modulated sinusoidal signals that are pulse-modulated and that are output from the two output terminals.
  • the two pulse-modulated sinusoidal signals are respectively expressed as follows.
  • the signals W 11 and W 12 output from the two output terminals 26a and 26b of the first pulse modulation type phase variable two-output transmitter 25a have an angular frequency ⁇ , a time t, and an initial phase ⁇ 1.
  • ⁇ 2 , W 11 (t) sin ( ⁇ t + ⁇ 1 )
  • W 12 (t) sin ( ⁇ t + ⁇ 2 )
  • the phase difference between the two sine wave signals output from the two output terminals of the phase-variable two-output transmitter 25a, the pulse width Hw and the period T0 of the pulse modulation are the phase difference adjuster attached to the transmitter 25a, and
  • Each of the pulse modulation regulators can be set to an arbitrary value.
  • the first pulse modulation type phase-variable two-output transmitter 25a transmits a pulse-modulated synchronization signal to a second pulse modulation type phase-variable two-output transmitter 25b, which will be described later, via the synchronization signal transmission cable 24.
  • Send One output of the two output terminals of the first pulse modulation type phase-variable two-output transmitter 25a is transmitted to the first coupler 28a described later, and the other output is transmitted to the second coupler 28b described later. Is done.
  • Reference numeral 28a denotes a first coupler which outputs one output signal of two output terminals of the first pulse modulation system phase variable 2 output transmitter 25a and a second pulse modulation system phase variable 2 output described later. The output signals of one of the two output terminals of the transmitter 25b are combined and transmitted to the first amplifier 29a described later.
  • Reference numeral 29a is a first amplifier that amplifies the power of the signal transmitted from the first coupler 28a.
  • Reference numeral 30a is a coaxial cable, which transmits the output of the first amplifier 29a to a first impedance matching unit 31a described later.
  • Reference numeral 31a is a first impedance matching unit, and the output of the first amplifier 29a is efficiently transmitted to the plasma generated between a pair of electrodes 2 and 3 described later. The impedance and the impedance of the plasma generated between the pair of electrodes 2 and 3 that are the load are matched and adjusted.
  • Reference numeral 32a denotes a first coaxial cable, and the output of the first amplifier 29a is supplied to the first and third feeding points 20a via the balun 33a, the current introduction terminal 40, and the connection conductors 72a and 73a. , 21a.
  • the first and third feeding points 20a and 21a are installed at positions facing the second and fourth feeding points 20b and 21b, which will be described later, in the power propagation direction. That is, the first and third feeding points 20a and 21a are provided on one side of the two opposing sides of the pair of electrodes 2 and 3, and the second and fourth feeding points 20b and 21b are provided on the other side. Is installed.
  • Reference numeral 40 denotes a current introduction terminal.
  • 40b used in the second embodiment is used.
  • the first and second connection conductors 72a and 73a shown in FIG. 6 are used for connection between the current introduction terminal 40 and the power supply points 20a and 21a disposed on the first and second electrodes.
  • the current introduction terminal 40 of the first amplifier 29a transmitted through the impedance matching device 31a and the balance-unbalance conversion device 33a in the plasma surface treatment apparatus (plasma CVD apparatus) having the current introduction terminal shown in FIG.
  • plasma CVD apparatus plasma surface treatment apparatus
  • the flange 65 on the atmosphere side of the current introduction terminal 40 and the earth shield box 66 of the balance-unbalance conversion device 33a are connected, and the power radiated from the electric circuit components inside the balance-unbalance conversion device 33a and The power radiated from the first and second rectangular plate conductors 61 and 62 of the current introduction terminal 40 is shielded. Connecting the flange 65 and the flange 68 of the earth shield box 66 is extremely important in preventing the power radiation.
  • the first amplifier 29a is provided with an output value (traveling wave) monitor (not shown) and a reflected wave monitor reflected from the downstream side and returned.
  • an isolator for protecting the electric circuit of the main body of the first power amplifier 29a by the reflected wave is attached.
  • first for adjustment of the output of the first amplifier 29a, first, for example, an output of about 20 to 30% of the maximum output of the first amplifier 29a is supplied to the first impedance matching unit 31a, the first coaxial cable 32a, and the balance / unbalance.
  • the reactance (L and C) of the first matching unit 31a is adjusted while observing the detector of the traveling wave Pf and the reflected wave Pr attached to the first amplifier 29a. While adjusting the reactances (L and C) of the first impedance matching unit 31a, a condition is selected in which the reflected wave Pr becomes the minimum value. Then, the output of the first amplifier 29a is set to a required value, and the reflected wave Pr becomes the minimum value while adjusting the reactance (L and C) of the first matching unit 31a again with the output. Select conditions. Note that the adjustment of the impedance matching unit, that is, the condition under which the reflected wave Pr becomes the minimum value does not change unless the plasma generation condition is changed, and therefore does not require much time.
  • Reference numeral 25b is a second pulse modulation type phase variable 2-output transmitter that generates a sine wave signal having an arbitrary frequency of 30 MHz to 300 MHz (VHF band), for example, 60 MHz, and pulses the sine wave signal. It is possible to arbitrarily set the phase difference between the two pulse-modulated sinusoidal signals that are modulated and output from the two output terminals.
  • the two pulse-modulated sinusoidal signals are respectively expressed as follows. That is, the signals W 21 and W 22 output from the two output terminals 27a and 27b of the transmitter 25b having the second pulse modulation system variable phase 2 output have an angular frequency ⁇ , a time t, and an initial phase ⁇ 1.
  • the phase difference between the two sine wave signals output from the two output terminals of the phase-variable two-output transmitter 25b, the pulse width Hw and the period T0 of the pulse modulation are the phase difference adjuster attached to the transmitter 25b, and Each of the pulse modulation regulators can be set to an arbitrary value.
  • the second pulse modulation system variable phase 2 output transmitter 25b transmits the pulse modulation synchronization signal transmitted from the first pulse modulation system variable phase 2 output transmitter 25a to the synchronization signal transmission cable 24. And a signal synchronized with the signal can be generated.
  • Reference numeral 28b denotes a second coupler, which is an output signal of one of the two output terminals of the second pulse modulation system phase variable 2-output transmitter 25b and the first pulse modulation system phase variable 2-output transmitter.
  • the output signals of one of the two output terminals 25a are combined and transmitted to a second amplifier 29b described later.
  • Reference numeral 29b is a second amplifier that amplifies the power of the signal transmitted from the second coupler 28b.
  • Reference numeral 30b is a coaxial cable, which transmits the output of the second amplifier 29b to a second matching unit 31b described later.
  • Reference numeral 31b is a second impedance matching unit, and the output impedance of the second amplifier 29b is transmitted so that the output of the second amplifier 29b is efficiently transmitted to the plasma generated between the pair of electrodes 2 and 3. The impedance adjustment of the plasma generated between the pair of electrodes 2 and 3 as the load is adjusted.
  • Reference numeral 32b is a second coaxial cable, and the output of the second amplifier 29b is supplied to the second and third feeding points 20b through the balance-unbalance conversion device 33b, the current introduction terminal 40, and the connection conductors 72a and 73a. , 21b.
  • Reference numeral 40 denotes a current introduction terminal.
  • 40b used in the second embodiment is used.
  • the first and second connection conductors 72a and 73a shown in FIG. 6 are used for the connection between the current introduction terminal 40 and the power supply points 20b and 21b disposed on the first and second electrodes.
  • the current introduction terminal 40 of the second amplifier 29b transmitted through the impedance matching device 31b and the balance-unbalance conversion device 33b in the plasma surface treatment apparatus (plasma CVD apparatus) having the current introduction terminal shown in FIG.
  • plasma CVD apparatus plasma surface treatment apparatus
  • the flange 65 on the atmosphere side of the current introduction terminal 40 and the earth shield box 66 of the balance-unbalance conversion device 33b are connected, and the power radiated from the electric circuit components inside the balance-unbalance conversion device 33a and The power radiated from the first and second rectangular plate conductors 61 and 62 of the current introduction terminal 40 is shielded. Connecting the flange 65 and the flange 68 of the earth shield box 66 is extremely important in preventing the power radiation.
  • the function of the second amplifier 29b will be supplementarily described.
  • the second amplifier 29b is accompanied by a monitor of an output value (traveling wave) (not shown) and a monitor of a reflected wave reflected and returned from the downstream side.
  • an isolator for protecting the electric circuit of the second power amplifier 29b main body by the reflected wave is attached.
  • the monitor of the output value (traveling wave) and the reflected wave reflected from the downstream side are the same as in the case of the first amplifier 29a.
  • the method of adjusting the output of the second amplifier 29b is the same as that of the first amplifier 29a.
  • the second and fourth feeding points 20b and 21b are installed at positions facing the first and third feeding points 20a and 21a in the power propagation direction, respectively. That is, the first and third feeding points 20a and 21a are provided on one side of the two opposing sides of the pair of electrodes 2 and 3, and the second and fourth feeding points 20b and 21b are provided on the other side. Is installed.
  • one of the two outputs of the first pulse modulation type phase-variable two-output transmitter 25a that is, the output signal of the output terminal 26a is the first coupler 28a and the first amplifier 29a.
  • the power transmitted to the three feeding points 21a is referred to as first power.
  • one of the two outputs of the first pulse modulation system variable phase two-output transmitter 25a that is, the output signal of the output terminal 26b is the second coupler 28b, the second amplifier 29b, the coaxial cable.
  • the power transmitted to the point 21b is referred to as second power.
  • one of the two outputs of the second pulse modulation system variable phase output 2 output transmitter 25b, that is, the output signal of the output terminal 27a, is the first coupler 28a, the first amplifier 29a, the coaxial cable 30a, the first output.
  • the power transmitted to the feeding point 21a is referred to as third power.
  • one of the two outputs of the second pulse modulation system variable phase output 2 transmitter 25b, that is, the output signal of the output terminal 27b is the second coupler 28b, the second amplifier 29b, the coaxial cable 30b,
  • the transmitted power is referred to as fourth power.
  • FIGS. 11 and 12 in order to clarify the temporal relationship between the first, second, third and fourth powers.
  • the horizontal axis represents time t
  • the vertical axis represents power.
  • the horizontal axis represents time t
  • the vertical axis represents voltage.
  • Pulse-modulated first power supplied between the first and third feeding points 20a and 21a and pulse-modulated second power supplied between the second and fourth feeding points 20b and 21b A typical example is shown in FIGS. 11 and 12 as W11 (t) and W12 (t), respectively.
  • These two electric powers are sine waves pulse-modulated with a pulse width Hw and a period T0.
  • Pulse-modulated third power supplied between the first and third feeding points 20a, 21a and pulse-modulated fourth power supplied between the second and fourth feeding points 20b, 21b A typical example is shown by W21 (t) and W22 (t) in FIGS. 11 and 12, respectively.
  • These two power waves are pulse-modulated with a pulse width Hw, a period T0, and rising at a time that is half a period later than the pulse rise time of the pulse modulation of W11 (t) and W12 (t), ie, T0 / 2. Sine wave.
  • the first and second preliminary film forming steps and the main film forming step are necessary as procedures.
  • the first preliminary film-forming step includes In order to grasp the set value of the phase difference between the two outputs of the transmitter 25b of the second pulse modulation type phase variable and two outputs, this film forming process is performed for the purpose of manufacturing the target amorphous Si.
  • the substrate 11 is previously set on the second electrode 3, a vacuum pump (not shown) is operated, and impurities in the vacuum container 1 are operated. After removing the gas and the like, the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C. while supplying SiH 4 gas from the discharge gas supply tube 8 at, for example, 250 sccm and a pressure of 0.5 Torr (66.5 Pa). .
  • the output of the power amplifier 29a is set to 100 W, and the output is supplied to the first and third output terminals via the first impedance matching device 31a, the balance-unbalance conversion device 33a, the current introduction terminal 40, and the connection conductors 70a and 71a.
  • the output of the second power amplifier 29b is set to 100 W, and the output is connected to the second impedance matching device 31b, the balance-unbalance conversion device 33b, the current introduction terminal 40, and the connection.
  • the electric power is supplied to the second and fourth feeding points 20b and 21b via the conductors 70a and 71a.
  • the reflected wave of the supplied power hardly returns to the upstream side of the impedance matching units 31a and 31b. be able to.
  • SiH 4 gas plasma is generated between the pair of electrodes 2 and 3.
  • the pair of electrodes 2 and 3 have substantially the same area and are not grounded, and the voltage phase difference is 180 at each of the feeding points 20a and 21a and the feeding points 20b and 21b. Since the different powers, that is, the powers of the forward and return currents having the same amplitude and the phases different by 180 ° are supplied, the abnormal discharge in the vicinity of the feeding point is completely suppressed.
  • the generated plasma is only between the pair of electrodes 2 and 3.
  • an amorphous Si film is formed on the substrate 11 with a film forming time of, for example, 10 to 20 minutes.
  • the substrate 11 is taken out from the vacuum vessel 1 and the film thickness distribution of the amorphous Si film is evaluated.
  • the film thickness distribution of, for example, amorphous Si deposited on the substrate 11 becomes a sinusoidal distribution due to the generation of a standing wave that is a phenomenon unique to the VHF plasma described above.
  • Such a film-forming test is repeatedly performed using the phase difference between the two outputs of the first pulse modulation type phase-variable two-output transmitter 25a as a parameter.
  • the distance from the center point of the substrate 11 to the position of the maximum thickness of the sine film thickness distribution and the transmitter 25a of the first pulse modulation type phase variable 2-output transmitter 25a is grasped as data.
  • the phase difference for setting a position that is one-eighth of the wavelength ⁇ from the center point of the substrate 11 in the direction of the first feeding point 21, that is, ⁇ / 8, is, for example, ⁇ 1. Is done.
  • the method for grasping the relationship between the maximum position of the sinusoidal thickness distribution and the phase difference between the output voltages of the first phase variable and two-output transmitter 25a is performed by measuring the thickness distribution of the film.
  • the method is not limited to the application method.
  • the spatial distribution of the emission intensity of the generated plasma in the electromagnetic wave propagation direction is measured with an optical sensor, and the relationship between the position of the maximum intensity and the phase difference is grasped.
  • the wavelength ⁇ is not the wavelength of the electromagnetic wave in vacuum, but the wavelength ⁇ in the above film forming conditions, and is shorter than the wavelength ⁇ 0 of the electromagnetic wave in vacuum.
  • the ratio ⁇ / ⁇ 0 between the wavelength ⁇ in the plasma and the wavelength ⁇ 0 in the vacuum is about 0.5 to 0.7.
  • the pressure is 530 to 1333 Pa (4 to 10 Torr)
  • a voltage wave of power supplied in a pulse form from the first and third feed points 20a, 21a, and a voltage wave of power supplied in a pulse form from the second and fourth feed points 20b, 21b. are supplied from the same power source and propagate between the electrodes. That is, two electromagnetic waves having an electric field in the same direction as the normal direction of the surface of the substrate 11 are generated between the first electrode 2 and the second electrode 3, and both propagate from directions facing each other. Since they overlap, an interference phenomenon occurs. That is, a standing wave is generated.
  • the standing wave generated by the first power and the second power is referred to as a first standing wave.
  • the control method of the 1st standing wave is demonstrated.
  • the distance in the direction from the first feeding point 20a to the second feeding point 20b is x
  • the voltage wave propagating in the positive direction of x is W11 (x, t)
  • the voltage propagating in the negative direction of x is W21 (x, t)
  • W11 (x, t) V1 ⁇ sin ( ⁇ t + 2 ⁇ x / ⁇ )
  • W12 (x, t) V1 ⁇ sin ⁇ t ⁇ 2 ⁇ (x ⁇ L0) / ⁇ + ⁇
  • V1 is the amplitude of the voltage wave
  • ⁇ is the angular frequency of the voltage
  • ⁇ is the wavelength of the voltage wave
  • t is the time
  • L0 is the interval between the first and second feeding points
  • ⁇ is supplied from the first feeding point 20a.
  • a composite wave W1 (x, t) of these two voltage waves is expressed by the following equation.
  • the combined wave of the two voltage waves is referred to as a first standing wave W1 (x, t).
  • the strength of power between the pair of electrodes is proportional to the square of the amplitude value of the first standing wave W1 (x, t) of the voltage. That is, the power intensity I1 (x, t) is I1 (x, t) ⁇ cos 2 ⁇ 2 ⁇ (x ⁇ L0 / 2) / ⁇ / 2 ⁇ It is expressed.
  • the above equation means that a standing wave having a period of half the wavelength in the x direction is generated. Here, this is called a first standing wave.
  • FIG. 13 conceptually shows the intensity distribution with a solid line. Note that FIG.
  • the plasma between the pair of electrodes is uniformly generated by the standing wave generated by the interference between the traveling wave from the feeding point and the reflected wave from the opposite end of the feeding point. It shows the reason for the difficulty of not being.
  • the uniformity of the plasma is in the range of ⁇ 0.05 to + 0.05 ⁇ in terms of the distance in the power propagation direction ( That is, the range in which the film thickness is uniform is limited to a length of 0.1 ⁇ ).
  • the wavelength ⁇ is not the wavelength of the electromagnetic wave in vacuum, but the wavelength ⁇ in the above film forming conditions, and is shorter than the wavelength ⁇ 0 of the electromagnetic wave in vacuum.
  • the ratio ⁇ / ⁇ 0 between the wavelength ⁇ in the plasma and the wavelength ⁇ 0 in the vacuum is about 0.5 to 0.9.
  • the substrate 11 is previously set on the second electrode 3, a vacuum pump (not shown) is operated, the impurity gas in the vacuum vessel 1, etc. Then, while the SiH 4 gas is supplied from the discharge gas supply tube 8 at 250 sccm and a pressure of 0.5 Torr (66.5 Pa), the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C. Then, the third and fourth powers are supplied to the pair of electrodes 2 and 3 from the first and third power supply points 20a and 21a and the second and fourth power supply points 20b and 21b, respectively.
  • the output of the power amplifier 29a is set to 100 W, and the output is supplied to the first and second output terminals via the first impedance matching device 31a, the balance / unbalance conversion device 33a, the current introduction terminal 40, and the connection conductors 70a and 71a.
  • the output of the second power amplifier 29b is set to 100 W, and the output is connected to the second impedance matching device 31b, the balance-unbalance conversion device 33b, the current introduction terminal 40, and the connection.
  • the electric power is supplied to the second and fourth feeding points 20b and 21b via the conductors 70a and 71a.
  • the reflected wave of the supplied power can be prevented from returning to the upstream side of the respective impedance matching units 31a and 31b.
  • the reason why plasma is generated except between the pair of electrodes 2 and 3 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded. Leakage current generated by Also, the main cause of abnormal discharge in the vicinity of the feeding point is caused by the leakage current caused by the unbalanced transmission circuit in the power transmission circuit supplied to the electrode and one of the pair of electrodes being grounded. Leakage current. As a result, plasma of SiH 4 gas without abnormal discharge is generated between the pair of electrodes 2 and 3, and amorphous Si, for example, is deposited on the substrate 11.
  • an amorphous Si film is formed on the substrate 11 with a film forming time of, for example, 10 to 20 minutes.
  • the substrate 11 is taken out from the vacuum vessel 1 and the film thickness distribution of the amorphous Si film is evaluated.
  • the film thickness distribution of, for example, amorphous Si deposited on the substrate 11 has a sinusoidal distribution due to the generation of a standing wave that is a phenomenon inherent to the VHF plasma.
  • Such a film-forming test is repeatedly performed using the phase difference between the two outputs of the second pulse modulation type phase-variable two-output transmitter 25b as a parameter.
  • the distance from the center point of the substrate to the position of the maximum thickness of the sinusoidal film thickness distribution and 2 of the transmitter 25 b of the second pulse modulation system variable phase 2 output is grasped as data.
  • the distance from the center point of the substrate to the position of the maximum thickness of the sinusoidal film thickness distribution is grasped as data.
  • the position of the maximum thickness of the film thickness distribution for example, from the center point of the substrate by the data indicating the relationship between the phase differences between the two outputs of the transmitter 25b of the second pulse modulation type phase variable and two outputs.
  • the phase difference for setting the position in the direction of the point 27 to one-eighth of the wavelength ⁇ is, for example, ⁇ 2.
  • the method for grasping the relationship between the maximum position of the sinusoidal thickness distribution and the phase difference between the output voltages of the first phase variable and two-output transmitter 25a is performed by measuring the thickness distribution of the film.
  • the method is not limited to the application method.
  • the spatial distribution of the emission intensity of the generated plasma in the electromagnetic wave propagation direction is measured with an optical sensor, and the relationship between the position of the maximum intensity and the phase difference is grasped. Also good.
  • the wavelength ⁇ is not the wavelength of the electromagnetic wave in vacuum, but the wavelength ⁇ in the above film forming conditions, and is shorter than the wavelength ⁇ 0 of the electromagnetic wave in vacuum.
  • the ratio ⁇ / ⁇ 0 between the wavelength ⁇ in the plasma and the wavelength ⁇ 0 in the vacuum is about 0.5 to 0.9.
  • the pressure is 530 to 1333 Pa (4 to 10 Torr)
  • voltage waves of two electric powers supplied from the first and second feeding points 20a and 21a and the second and fourth feeding points 20b and 21b are oscillated from the same power source. Propagating between the electrodes. That is, two electromagnetic waves having an electric field in the same direction as the normal direction of the surface of the substrate 11 are generated between the first electrode 2 and the second electrode 3, and both propagate from directions facing each other. Since they overlap, an interference phenomenon occurs. That is, a standing wave is generated. Here, this is referred to as a second standing wave. In FIG.
  • the distance in the direction from the first feeding point 20a to the second feeding point 20b is x
  • the voltage wave propagating in the positive direction of x is W21 (x, t)
  • the voltage propagating in the negative direction of x is W22 (x, t)
  • W21 (x, t) V2 ⁇ sin ( ⁇ t + 2 ⁇ x / ⁇ )
  • W22 (x, t) V2 ⁇ sin ⁇ t ⁇ 2 ⁇ (x ⁇ L0) / ⁇ + ⁇
  • V2 is the amplitude of the voltage wave
  • ⁇ is the angular frequency of the voltage
  • ⁇ is the wavelength of the voltage wave
  • t is the time
  • L0 is the interval between the first and second feed points
  • ⁇ is supplied from the first feed point 20a.
  • the voltage composite wave W2 (x, t) is expressed by the following equation.
  • the third and fourth power supply systems are used to supply power between the first and third power supply points 20a and 21a and between the second and fourth power supply points 20b and 21b.
  • the combined wave of the two voltage waves is called a second standing wave W2 (x, t).
  • the strength of the power between the pair of electrodes is proportional to the square of the amplitude value of the combined wave W2 (x, t) of the voltage. That is, the power intensity I2 (x, t) is I2 (x, t) ⁇ cos 2 ⁇ 2 ⁇ (x ⁇ L0 / 2) / ⁇ / 2 ⁇ It is expressed.
  • the above equation means that a standing wave having a period of half the wavelength in the x direction is generated. Here, this is referred to as a second standing wave.
  • the main film forming step is started.
  • the substrate 11 is previously set on the second electrode 4, a vacuum pump (not shown) is operated to remove impurity gas in the vacuum vessel 1, and then SiH 4 is discharged from the discharge gas supply pipe 8. While the gas is supplied at, for example, 300 sccm and the pressure of 0.5 Torr (66.5 Pa), the substrate temperature is maintained in the range of 80 to 350 ° C., for example, 180 ° C.
  • the phase difference between the voltages of the two outputs of the first pulse modulation type phase-variable two-output transmitter 25a of the components of the power supply system of the first and second electric powers is determined as a first preliminary film forming step.
  • electric power of 500 W is supplied between feeding points at both ends of the first and second electrodes, and the second pulse modulation system phase variable of the constituent members of the third and fourth electric power supply systems is provided.
  • the phase difference between the voltages of the two outputs of the two-output transmitter 25b is set to ⁇ 2 grasped as the data of the second preliminary film-forming process, and the pulse modulation thereof is shown by W21 (t) and W22 ( pulse width Hw at t)
  • electric power of 500 W is supplied between feeding points at both ends of the first and second electrodes.
  • the voltage waves W11 (x, t), W12 (x, t), W21 (x, t) and W22 (x, t) are supplied to the feeding points at both ends of the first and second electrodes.
  • W11 (x, t) and W12 (x, t) interfere to form the first standing wave W1 (x, t).
  • W21 (x, t) and W22 (x, t) interfere to form a second standing wave W2 (x, t).
  • W11 (x, t) does not interfere with W21 (x, t) and W22 (x, t) because they are temporally separated.
  • W12 (x, t) does not interfere with W21 (x, t) and W22 (x, t).
  • the distribution of the strength of the power generated between the pair of electrodes 2 and 3 is the first standing wave.
  • the intensity distribution I1 (x, t) of W1 (x, t) and the intensity distribution I2 (x, t) of the second standing wave W2 (x, t) are superimposed.
  • the state is conceptually shown in FIG. 13 with the first standing wave as a solid line and the second standing wave as a dotted line.
  • x is the distance in the propagation direction of the supplied power
  • ⁇ is the wavelength when the used power propagates in the plasma
  • ⁇ is the initial phase difference of the voltages at the two feeding points arranged at both ends of the pair of electrodes.
  • the above matter means that the power intensity distribution between the pair of electrodes is uniform without depending on the wavelength ⁇ of the power used. That is, in the field of application to plasma surface treatment in which the power intensity between a pair of electrodes and the plasma intensity are in a proportional relationship, it is possible to generate a uniform plasma between the pair of electrodes. means.
  • the strength of plasma generated between a pair of electrodes used in the field of plasma surface treatment is proportional to the strength of power between the pair of electrodes.
  • the pair of electrodes 2 and 3 have substantially the same area and are not grounded.
  • power having a voltage phase difference of 180 ° is supplied to the feeding points at both ends of the electrode, that is, power having the same amplitude in the forward and return currents and a phase of 180 ° different from each other.
  • Abnormal discharge in the vicinity of the feeding point is completely suppressed.
  • the generated plasma is only between the pair of electrodes 2 and 3.
  • the reason why plasma is generated except between the pair of electrodes 2 and 3 is that the power transmission circuit supplied to the electrodes is leaked due to the unbalanced transmission circuit and one of the pair of electrodes is grounded.
  • the main cause of abnormal discharge in the vicinity of the feeding points 20a, 20b, 21a, and 21b is that the power transmission circuit supplied to the electrodes has a leakage current caused by an unbalanced transmission circuit and one of the pair of electrodes. This is a leakage current generated by grounding.
  • abnormal discharge in the vicinity of the feeding point is suppressed, and plasma having a uniform intensity according to a uniform power distribution is generated.
  • the distance between the antinodes of the first and second standing waves is 0.25 times the wavelength ⁇ in the plasma of the electromagnetic wave used, that is, 0.25 ⁇
  • a pair of electrodes The power intensity distribution I (x, t) generated between 2 and 4 has a constant value and does not depend on the position in the power propagation direction, and is uniform.
  • the leakage current caused by the unbalanced transmission circuit is caused by the power transmission circuit supplied to the electrode that is the main cause of the abnormal discharge in the vicinity of the feeding points 20a, 20b, 21a, 21b.
  • the current introduction terminal 40 and the balance-unbalance conversion devices 33a and 33b can be almost completely suppressed.
  • the pair of electrodes are ungrounded and have substantially the same area, and power is supplied through the balanced transmission line by the current introduction terminal 40 and the balanced / unbalanced converters 33a and 33b. Leakage current generated by grounding one of the pair of electrodes is almost completely suppressed. This means that it is an epoch-making discovery in the sense that it is possible to provide a device capable of realizing large-area and uniform plasma processing, which is an important issue in the application field of VHF plasma or UHF plasma. Yes.
  • the distance between the antinodes of the first and second standing waves is 0.22 to 0.28 times the wavelength ⁇ in the plasma of the electromagnetic wave used, that is, 0.22 to 0.
  • the distribution I (x, t) of the intensity of power generated between the pair of electrodes 2 and 4 is ⁇ 20% or less.
  • the distance between the antinodes of the first and second standing waves is 0.238 to 0.263 times the wavelength ⁇ in the plasma of the electromagnetic wave used, that is, 0.238 to 0.
  • the distribution I (x, t) of the intensity of power generated between the pair of electrodes 2 and 4 is ⁇ 10% or less.
  • microcrystalline Si, thin-film polycrystalline Si, or the like can be formed by optimizing the flow ratio, pressure, and power of SiH4 and H2 in the film forming conditions.
  • the substrate size is limited to about 1800 mm ⁇ 300 mm.
  • a plurality of pairs of electrodes are installed, and the above-described power supply is performed according to the number of the electrodes.
  • the width of the substrate size can be expanded.
  • the film thickness distribution can be within ⁇ 10%.
  • a plasma surface treatment apparatus using a frequency in the VHF band can be provided as a means of drastic improvement related to productivity improvement and cost reduction in the manufacturing field of a-Si solar cells, thin film transistors, and photosensitive drums. Means. The industrial value of this effect is significantly great.
  • the present invention can be used in industries such as thin film silicon solar cells, liquid crystal displays using thin film transistors, and copying machines using photosensitive drums.

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  • Chemical & Material Sciences (AREA)
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Inorganic Chemistry (AREA)
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Abstract

L'invention porte sur un appareil de traitement de surface par plasma et sur un procédé de traitement de surface par plasma permettant de supprimer la génération de plasma sinon entre deux électrodes ainsi qu’une décharge anormale ; une perte de puissance ce qui permet le traitement de surface par plasma de zones importantes et uniformes par génération de plasma dans la bande de très haute fréquence (VHF) et application d'un tel plasma à un traitement de surface par plasma. Dans une borne d'introduction de courant à utiliser pour l'appareil et pour le procédé de traitement de surface par plasma, sur un corps conducteur tubulaire qui pénètre une paroi d'un contenant sous vide agencé sur la paroi, sont agencés deux corps de conducteur de type plaque rectangulaire isolés l'un de l'autre par un corps diélectrique, une partie d'extrémité de chaque corps de conducteur de type plaque rectangulaire étant située sur le côté sous vide, l'autre extrémité sur le côté atmosphérique. La partie d'extrémité de corps de conducteur tubulaire située sur le côté sous vide et une boîte de blindage par mise à la masse d'un convertisseur équilibré-déséquilibré sont amenées à adhérer l'une à l'autre. L'appareil de traitement de surface par plasma comporte la borne d'introduction de courant.
PCT/JP2009/063116 2008-07-31 2009-07-22 Borne d'introduction de courant, appareil de traitement de surface par plasma comportant la borne d'introduction de courant et procédé de traitement de surface par plasma WO2010013624A1 (fr)

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WO2019004190A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement au plasma
CN110800378B (zh) * 2017-06-27 2021-12-28 佳能安内华股份有限公司 等离子体处理装置
TWI693860B (zh) 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
KR102361377B1 (ko) 2017-06-27 2022-02-10 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
PL3648550T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
TWI678425B (zh) * 2017-06-27 2019-12-01 日商佳能安內華股份有限公司 電漿處理裝置
WO2019003309A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement par plasma
WO2020003557A1 (fr) 2018-06-26 2020-01-02 キヤノンアネルバ株式会社 Dispositif de traitement par plasma, procédé de traitement par plasma, programme, et support de mémoire

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JP2005051102A (ja) * 2003-07-30 2005-02-24 Masayoshi Murata 高周波プラズマ発生用電極と、該電極により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP2005303257A (ja) * 2004-10-01 2005-10-27 Masayoshi Murata 高周波プラズマ生成用平衡不平衡変換装置と、該平衡不平衡変換装置により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
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JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

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JP2001007613A (ja) * 1999-06-21 2001-01-12 Tokai Univ 誘電体線路結合装置
JP2006528466A (ja) * 2003-07-23 2006-12-14 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ コプレーナストリップ線路に基づく方法および装置
JP2005051102A (ja) * 2003-07-30 2005-02-24 Masayoshi Murata 高周波プラズマ発生用電極と、該電極により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
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JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

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