JP2008294465A - 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法 - Google Patents

電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法 Download PDF

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Publication number
JP2008294465A
JP2008294465A JP2008197522A JP2008197522A JP2008294465A JP 2008294465 A JP2008294465 A JP 2008294465A JP 2008197522 A JP2008197522 A JP 2008197522A JP 2008197522 A JP2008197522 A JP 2008197522A JP 2008294465 A JP2008294465 A JP 2008294465A
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electrodes
plasma
pair
introduction terminal
current introduction
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JP2008197522A
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English (en)
Japanese (ja)
Inventor
Masayoshi Murata
村田正義
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Priority to JP2008197522A priority Critical patent/JP2008294465A/ja
Publication of JP2008294465A publication Critical patent/JP2008294465A/ja
Priority to PCT/JP2009/063116 priority patent/WO2010013624A1/fr
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2008197522A 2008-07-31 2008-07-31 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法 Pending JP2008294465A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008197522A JP2008294465A (ja) 2008-07-31 2008-07-31 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法
PCT/JP2009/063116 WO2010013624A1 (fr) 2008-07-31 2009-07-22 Borne d'introduction de courant, appareil de traitement de surface par plasma comportant la borne d'introduction de courant et procédé de traitement de surface par plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197522A JP2008294465A (ja) 2008-07-31 2008-07-31 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法

Publications (1)

Publication Number Publication Date
JP2008294465A true JP2008294465A (ja) 2008-12-04

Family

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Family Applications (1)

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JP2008197522A Pending JP2008294465A (ja) 2008-07-31 2008-07-31 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法

Country Status (2)

Country Link
JP (1) JP2008294465A (fr)
WO (1) WO2010013624A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019004190A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement au plasma
WO2019004191A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement au plasma
CN110800377A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
CN110800375A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
CN110800378A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
CN110800376A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007613A (ja) * 1999-06-21 2001-01-12 Tokai Univ 誘電体線路結合装置
US7091802B2 (en) * 2003-07-23 2006-08-15 President And Fellows Of Harvard College Methods and apparatus based on coplanar striplines
JP3575014B1 (ja) * 2003-07-30 2004-10-06 村田 正義 高周波プラズマ発生用電極と、該電極により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP2005303257A (ja) * 2004-10-01 2005-10-27 Masayoshi Murata 高周波プラズマ生成用平衡不平衡変換装置と、該平衡不平衡変換装置により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690244B (zh) * 2017-06-27 2020-04-01 日商佳能安內華股份有限公司 電漿處理裝置
JP6516951B1 (ja) * 2017-06-27 2019-05-22 キヤノンアネルバ株式会社 プラズマ処理装置
CN110800375B (zh) * 2017-06-27 2021-12-28 佳能安内华股份有限公司 等离子体处理装置
JP6516950B1 (ja) * 2017-06-27 2019-05-22 キヤノンアネルバ株式会社 プラズマ処理装置
JP2019133929A (ja) * 2017-06-27 2019-08-08 キヤノンアネルバ株式会社 プラズマ処理装置
JP2019133930A (ja) * 2017-06-27 2019-08-08 キヤノンアネルバ株式会社 プラズマ処理装置
CN110800377A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
CN110800375A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
CN110800376B (zh) * 2017-06-27 2022-04-01 佳能安内华股份有限公司 等离子体处理装置
CN110800376A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
US11961710B2 (en) 2017-06-27 2024-04-16 Canon Anelva Corporation Plasma processing apparatus
WO2019004191A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement au plasma
CN110800378A (zh) * 2017-06-27 2020-02-14 佳能安内华股份有限公司 等离子体处理装置
JP7202199B2 (ja) 2017-06-27 2023-01-11 キヤノンアネルバ株式会社 プラズマ処理装置
JP7202198B2 (ja) 2017-06-27 2023-01-11 キヤノンアネルバ株式会社 プラズマ処理装置
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
WO2019004190A1 (fr) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement au plasma
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus
US11756773B2 (en) 2017-06-27 2023-09-12 Canon Anelva Corporation Plasma processing apparatus
US11784030B2 (en) 2017-06-27 2023-10-10 Canon Anelva Corporation Plasma processing apparatus
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium

Also Published As

Publication number Publication date
WO2010013624A1 (fr) 2010-02-04

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