WO2010007145A3 - Löt-stützstelle für solarmodule und halbleiterbauelement - Google Patents

Löt-stützstelle für solarmodule und halbleiterbauelement Download PDF

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Publication number
WO2010007145A3
WO2010007145A3 PCT/EP2009/059192 EP2009059192W WO2010007145A3 WO 2010007145 A3 WO2010007145 A3 WO 2010007145A3 EP 2009059192 W EP2009059192 W EP 2009059192W WO 2010007145 A3 WO2010007145 A3 WO 2010007145A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
supporting location
connector
solar modules
contact
Prior art date
Application number
PCT/EP2009/059192
Other languages
English (en)
French (fr)
Other versions
WO2010007145A2 (de
Inventor
Hilmar Von Campe
Bernd Meidel
Georg Gries
Christoph Will
Jürgen ROSSA
Original Assignee
Schott Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to US13/054,576 priority Critical patent/US20110132451A1/en
Priority to EP09780742A priority patent/EP2301076A2/de
Priority to CN2009801281014A priority patent/CN102099925A/zh
Priority to JP2011517939A priority patent/JP2011528493A/ja
Publication of WO2010007145A2 publication Critical patent/WO2010007145A2/de
Publication of WO2010007145A3 publication Critical patent/WO2010007145A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung bezieht sich auf eine Lötverbindung zwischen einer Außenfläche (23) eines über eine Haftschicht (14) mit einer Unterlage (12) verbundenen Halbleiterbauelementes (10) und einem streifenförmigen Verbinder (24). Damit auf den Verbinder einwirkende Zugkräfte nicht dazu führen, dass das Halbleiterbauelement von der Unterlage bzw. der Haftschicht abgelöst wird, wird vorgeschlagen, dass von der Außenfläche (23) des Halbleiterbauelementes (10) eine aus lötbarem Material bestehende und über eine Kontaktfläche A mit der Außenfläche (23) kontaktierte Stützstelle (26, 28) ausgeht, in oder auf der der Verbinder (24) unter Einhaltung eines Abstandes a mit a ≥ 10 µm zur Außenfläche (23) ein- oder aufgelötet ist und/oder dass der Abstand b zwischen Rand der Kontaktfläche zwischen der Stützfläche und der Außenfläche und Eintritt des Verbinders in die Stützstelle oder dem Kontaktbeginn zwischen diesen beträgt b ≥ 50 µm.
PCT/EP2009/059192 2008-07-18 2009-07-16 Löt-stützstelle für solarmodule und halbleiterbauelement WO2010007145A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/054,576 US20110132451A1 (en) 2008-07-18 2009-07-16 Solder supporting location for solar modules and semiconductor device
EP09780742A EP2301076A2 (de) 2008-07-18 2009-07-16 Löt-stützstelle für solarmodule und halbleiterbauelement
CN2009801281014A CN102099925A (zh) 2008-07-18 2009-07-16 用于太阳能模块和半导体器件的焊接支承座
JP2011517939A JP2011528493A (ja) 2008-07-18 2009-07-16 ソーラモジュールのためのはんだ付け用支持部位および半導体デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008002954.8 2008-07-18
DE102008002954A DE102008002954A1 (de) 2008-07-18 2008-07-18 Löt-Stützstelle für Solarmodule und Dünnschichtsolarmodule

Publications (2)

Publication Number Publication Date
WO2010007145A2 WO2010007145A2 (de) 2010-01-21
WO2010007145A3 true WO2010007145A3 (de) 2010-07-01

Family

ID=41346007

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/059192 WO2010007145A2 (de) 2008-07-18 2009-07-16 Löt-stützstelle für solarmodule und halbleiterbauelement

Country Status (7)

Country Link
US (1) US20110132451A1 (de)
EP (1) EP2301076A2 (de)
JP (2) JP2011528493A (de)
CN (1) CN102099925A (de)
DE (1) DE102008002954A1 (de)
TW (1) TW201013939A (de)
WO (1) WO2010007145A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024331B4 (de) * 2010-06-18 2023-06-01 Polytec Pt Gmbh Verfahren zur Verklebung eines bandförmigen Leiters mit einer Solarzelle, Anordnung mit der Verklebung und Verwendung eines Piezo-Jet-Dispensers dafür
JP2014516366A (ja) * 2011-03-29 2014-07-10 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 液晶媒体
DE202011110751U1 (de) 2011-03-30 2016-01-27 Solarwatt Gmbh Solarzelle mit metallischen Kontaktbändern
EP2541623B1 (de) * 2011-06-30 2016-12-14 AZURSPACE Solar Power GmbH Lichtkonverter
DE102013204828A1 (de) 2013-03-19 2014-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Rückseitenkontaktiertes Halbleiterbauelement und Verfahren zu dessen Herstellung
EP2992553A4 (de) 2013-05-03 2017-03-08 Honeywell International Inc. Leiterrahmenkonstrukt für bleifreie lötverbindungen
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
JP2017509489A (ja) 2014-02-20 2017-04-06 ハネウェル・インターナショナル・インコーポレーテッド 鉛フリーはんだ組成物
JP6503286B2 (ja) * 2015-12-24 2019-04-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体ウェハ
TWI714127B (zh) * 2018-06-26 2020-12-21 日商亞特比目有限公司 太陽能電池及太陽能電池的製造方法
TWI699899B (zh) * 2018-06-26 2020-07-21 日商亞特比目有限公司 太陽能電池及太陽能電池的製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3612269A1 (de) * 1986-04-11 1987-10-15 Telefunken Electronic Gmbh Verfahren zum anbringen eines verbindungsleiters am anschlusskontakt einer photovoltaischen solarzelle
EP0534473A2 (de) * 1991-09-26 1993-03-31 Canon Kabushiki Kaisha Sonnenzelle
EP0734075A1 (de) * 1994-10-06 1996-09-25 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Dünnschicht solarzelle
EP0913864A1 (de) * 1997-09-10 1999-05-06 Fujitsu Limited Montierungstruktur eines unbedeckten Halbleiterchips
EP1300889A2 (de) * 2001-09-28 2003-04-09 Sanyo Electric Co., Ltd. Photovoltaisches Element und photovoltaische Vorrichtung
DE10230392A1 (de) * 2002-07-05 2004-01-29 SUNOVATION Gesellschaft für regenerative Energiesysteme mbH Solarmodul zum direkten Umwandeln von Sonnenlicht in elektrische Energie
WO2005053039A2 (en) * 2003-11-27 2005-06-09 Kyocera Corporation Solar cell module
US20050224991A1 (en) * 2004-04-08 2005-10-13 Yong-Woon Yeo Bump for semiconductor package, semiconductor package applying the bump, and method for fabricating the semiconductor package
WO2007088751A1 (ja) * 2006-01-31 2007-08-09 Sanyo Electric Co., Ltd. 太陽電池素子および太陽電池モジュール

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US5391235A (en) * 1992-03-31 1995-02-21 Canon Kabushiki Kaisha Solar cell module and method of manufacturing the same
JP2002217434A (ja) * 2001-01-19 2002-08-02 Sharp Corp 太陽電池、太陽電池用インターコネクターおよびストリング
JP2005191201A (ja) * 2003-12-25 2005-07-14 Kyocera Corp 太陽電池素子接続用インナーリード及び太陽電池モジュール並びに太陽電池モジュールの製造方法
AT502005B1 (de) * 2005-06-01 2007-03-15 Outokumpu Copper Neumayer Gmbh Elektrisches verbindungselement, verfahren zu seiner herstellung und solarzelle- und modul mit verbindungselement
DE102005049687B4 (de) * 2005-10-14 2008-09-25 Infineon Technologies Ag Leistungshalbleiterbauteil in Flachleitertechnik mit vertikalem Strompfad und Verfahren zur Herstellung
US20070235077A1 (en) * 2006-03-27 2007-10-11 Kyocera Corporation Solar Cell Module and Manufacturing Process Thereof
JP5016342B2 (ja) * 2006-03-27 2012-09-05 京セラ株式会社 太陽電池モジュール
JP5016835B2 (ja) * 2006-03-31 2012-09-05 株式会社カネカ 光電変換装置及び光電変換装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3612269A1 (de) * 1986-04-11 1987-10-15 Telefunken Electronic Gmbh Verfahren zum anbringen eines verbindungsleiters am anschlusskontakt einer photovoltaischen solarzelle
EP0534473A2 (de) * 1991-09-26 1993-03-31 Canon Kabushiki Kaisha Sonnenzelle
EP0734075A1 (de) * 1994-10-06 1996-09-25 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Dünnschicht solarzelle
EP0913864A1 (de) * 1997-09-10 1999-05-06 Fujitsu Limited Montierungstruktur eines unbedeckten Halbleiterchips
EP1300889A2 (de) * 2001-09-28 2003-04-09 Sanyo Electric Co., Ltd. Photovoltaisches Element und photovoltaische Vorrichtung
DE10230392A1 (de) * 2002-07-05 2004-01-29 SUNOVATION Gesellschaft für regenerative Energiesysteme mbH Solarmodul zum direkten Umwandeln von Sonnenlicht in elektrische Energie
WO2005053039A2 (en) * 2003-11-27 2005-06-09 Kyocera Corporation Solar cell module
US20050224991A1 (en) * 2004-04-08 2005-10-13 Yong-Woon Yeo Bump for semiconductor package, semiconductor package applying the bump, and method for fabricating the semiconductor package
WO2007088751A1 (ja) * 2006-01-31 2007-08-09 Sanyo Electric Co., Ltd. 太陽電池素子および太陽電池モジュール
EP1981088A1 (de) * 2006-01-31 2008-10-15 Sanyo Electric Co., Ltd Solarbatterieelement und solarbatteriemodul

Also Published As

Publication number Publication date
DE102008002954A1 (de) 2010-01-21
TW201013939A (en) 2010-04-01
WO2010007145A2 (de) 2010-01-21
JP2015091601A (ja) 2015-05-14
EP2301076A2 (de) 2011-03-30
US20110132451A1 (en) 2011-06-09
CN102099925A (zh) 2011-06-15
JP2011528493A (ja) 2011-11-17

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