WO2009154075A1 - Processing device - Google Patents

Processing device Download PDF

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Publication number
WO2009154075A1
WO2009154075A1 PCT/JP2009/060015 JP2009060015W WO2009154075A1 WO 2009154075 A1 WO2009154075 A1 WO 2009154075A1 JP 2009060015 W JP2009060015 W JP 2009060015W WO 2009154075 A1 WO2009154075 A1 WO 2009154075A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning mechanism
cleaning
back surface
wafer
processing apparatus
Prior art date
Application number
PCT/JP2009/060015
Other languages
French (fr)
Japanese (ja)
Inventor
公平 森
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008156902A external-priority patent/JP5026351B2/en
Priority claimed from JP2008156919A external-priority patent/JP4932792B2/en
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2009154075A1 publication Critical patent/WO2009154075A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/02087Cleaning of wafer edges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a processing apparatus for processing a peripheral portion of a target object made of a semiconductor wafer or the like.
  • a holding unit that holds a substrate (object to be processed), a sponge-like first substrate cleaning brush that cleans the surface (one surface) of the peripheral portion of the substrate, and a first substrate cleaning brush that is opposed to the first substrate cleaning brush
  • a sponge-like second substrate cleaning brush that cleans the back surface (the other surface) of the peripheral edge of the substrate, and a brush contact / separation mechanism that causes the first substrate cleaning brush and the second substrate cleaning brush to approach and separate from each other;
  • the front and back surfaces of the peripheral edge of the object to be processed can be cleaned, but the peripheral edge of the object to be processed from the first cleaning part. It was not possible to control the pressing force applied to the front surface and the pressing force applied to the back surface of the peripheral edge of the object to be processed from the second cleaning section. For this reason, the conventional processing apparatus has the following problems.
  • a conventional processing apparatus as described in Japanese Patent Application Laid-Open No. 2007-157936 is configured to bring the first substrate cleaning brush and the second substrate cleaning brush closer to and away from each other.
  • the second substrate cleaning brush is positioned on the back side (lower side) of the object to be processed, and then moved in the horizontal direction toward the peripheral edge of the object to be processed, and then the first substrate cleaning brush and the second substrate cleaning are performed. It is necessary to sandwich the object to be processed with a brush. For this reason, it takes time to position the second substrate cleaning brush on the back surface of the object to be processed.
  • the second substrate cleaning brush is simply passed between the object to be processed held by the holding unit and the cup. It is necessary to provide a gap. For this reason, the size of the cup surrounding the wafer held by the holding unit increases.
  • the present invention reliably removes the polymer and particles adhering to the back surface without removing the patterning applied to the front surface, or reliably removes the particles adhering to each surface with the pressing force according to each surface.
  • the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed, and surrounds the object to be processed held by the holding part.
  • a processing apparatus capable of reducing the size of the cup is provided.
  • the processing apparatus comprises: A holding unit for holding the object to be processed; A rotation driving unit that rotates the object to be processed held by the holding unit; A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece; A second cleaning mechanism for cleaning in contact with the other surface of the peripheral edge of the workpiece; A first adjustment mechanism that adjusts the pressing force applied to one surface of the peripheral edge from the first cleaning mechanism; A second adjustment mechanism for adjusting the pressing force applied to the other surface of the peripheral edge from the second cleaning mechanism; It has.
  • the processing apparatus comprises: A holding unit for holding the object to be processed; A rotation driving unit that rotates the object to be processed held by the holding unit; A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece; A second cleaning mechanism that is connected to the first cleaning mechanism and that contacts and cleans the other surface of the peripheral portion of the object to be processed; The second cleaning mechanism can swing about a swing shaft, and abuts against the other surface of the peripheral edge when swinged toward the first cleaning mechanism.
  • the first adjustment mechanism can adjust the pressing force applied from the first cleaning mechanism to one surface of the peripheral edge of the object to be processed, and the second adjustment mechanism The pressing force applied from the second cleaning mechanism to the other surface of the peripheral edge of the object to be processed can be adjusted. For this reason, without removing the patterning applied to the front surface, the polymer and particles adhering to the back surface can be surely removed, or the particles adhering to each surface can be reliably removed with the pressing force according to each surface. can do.
  • the second cleaning mechanism can swing around the swing shaft, and when the second cleaning mechanism swings toward the first cleaning mechanism, the second cleaning mechanism contacts the other surface of the peripheral portion. In contact, the other surface of the peripheral edge is cleaned. For this reason, the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed. Moreover, when the cup surrounding the to-be-processed object hold
  • the side sectional view showing the composition of the processing device by a 1st embodiment of the present invention The side sectional view showing the composition of the 1st adjustment mechanism and the 2nd adjustment mechanism of the processing unit by a 1st embodiment of the present invention.
  • Schematic which shows the movement aspect of the 1st washing
  • the sectional side view which shows the structure of the 1st washing
  • FIG. 1 to FIG. 5 are diagrams showing a first embodiment of the present invention.
  • the processing apparatus includes a holding unit 1 that holds a semiconductor wafer W (hereinafter simply referred to as a wafer W) that is an object to be processed by vacuum suction, and a rotation that extends downward from the center of the holding unit 1.
  • a surface cleaning mechanism (first cleaning mechanism) 30 that contacts and cleans the surface (one surface) of the peripheral portion of the wafer W, and is connected to the surface cleaning mechanism 30 and contacts the back surface (the other surface) of the peripheral portion of the wafer W.
  • a back surface cleaning mechanism (second cleaning mechanism) 40 for cleaning in contact for cleaning in contact.
  • the surface cleaning mechanism 30 is provided with a first base end portion 31 and a lower end of the first base end portion 31, and can be brought into contact with the surface of the peripheral portion of the wafer W.
  • a surface cleaning part (first cleaning part) 32 in the form of a plate.
  • the surface cleaning unit 32 is composed of a hard portion 32a having a hard central portion in the cross section, and an outer peripheral portion surrounding the center portion is softer than the hard portion 32a. It consists of part 32b.
  • the back surface cleaning mechanism 40 is provided with a second base end portion 41 and an upper end of the second base end portion 41, and can be brought into contact with the back surface of the peripheral portion of the wafer W.
  • the back surface cleaning portion 42 is composed of a hard portion 42a having a hard central portion in the cross section, and an outer peripheral portion surrounding the central portion is softer than the hard portion 42a. It consists of part 42b.
  • the center portion of the cross section is made of hard hard portions 32a, 42a, and the outer peripheral portion surrounding the center portion is the hard portion 32a
  • the present invention is not limited to this, and only one of the front surface cleaning unit 32 and the rear surface cleaning unit 42 is composed of hard portions 32a and 42a having a central portion in the cross section, and an outer peripheral portion surrounding the central portion is provided. You may consist of the soft parts 32b and 42b softer than the hard parts 32a and 42a.
  • a casing 24 having an electromagnet 21 disposed therein is connected to the upper end of the surface cleaning mechanism 30.
  • a top surface adjustment mechanism (first adjustment mechanism) 10 that adjusts the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W is connected to the upper end of the housing 24.
  • the surface side adjusting mechanism 10 includes a cylindrical cylinder 12 and a piston 15 movable in the vertical direction within the cylinder 12.
  • the cylinder 12 is provided with an upper inflow portion 11 for flowing air into the upper side of the piston 15 and a lower inflow portion 16 for flowing air into the lower side of the piston 15.
  • each of the upper side inflow part 11 and the lower side inflow part 16 is connected to the air supply part (not shown).
  • a measured part 19 extending in the horizontal direction is connected to the upper end of the piston 15. Further, a measurement sensor 51 for measuring the pressing force applied from the measured part 19 is brought into contact with the lower end of the measured part 19. The measurement sensor 51 is connected to an output unit 52 that outputs a pressing force detected by the measurement sensor 51.
  • the air pressure applied to the piston 15 by the air flowing in from the upper inflow portion 11 and the air pressure applied to the piston 15 by the air flowing in from the lower inflow portion 16 are adjusted, thereby cleaning the surface.
  • the pressing force applied from the portion 32 to the surface of the peripheral portion of the wafer W is adjusted.
  • a permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40.
  • the backside adjustment mechanism (second adjustment mechanism) is configured by the permanent magnet 25 provided in the backside cleaning mechanism 40 and the electromagnet 21 that applies a magnetic force to the permanent magnet 25.
  • the pressing force applied from the back surface cleaning unit 42 to the back surface of the peripheral portion of the wafer W is adjusted by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21).
  • the back side adjustment mechanism (the electromagnet 21 and the permanent magnet 25) has a pressing force larger than the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral edge of the wafer W by the front side adjustment mechanism 10. Can be applied from the back surface cleaning mechanism 40 to the back surface of the peripheral portion of the wafer W, and conversely, the pressing force applied to the surface of the peripheral portion of the wafer W from the front surface cleaning mechanism 30 by the front surface adjustment mechanism 10 is smaller. The pressing force can be applied to the back surface of the peripheral portion of the wafer W from the back surface cleaning mechanism 40.
  • the casing 24 is provided with a connecting member 45 that can swing around a swing shaft 45a.
  • the back surface cleaning mechanism 40 is connected to the front surface cleaning mechanism 30 via the connecting member 45 and the housing 24.
  • the back surface cleaning mechanism 40 can swing about the swing shaft 45a.
  • the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are integrated into the front surface cleaning mechanism 30 via the housing 24 and the front surface side adjustment mechanism 10 in the vertical direction (from the front surface of the wafer W to the back surface).
  • the cleaning unit moving mechanism 55 is connected to move in the direction toward the head.
  • the rotation driving unit 60 includes a pulley 62 disposed on the outer periphery of the rotating shaft 5, a driving belt 63 wound around the pulley 62, and a driving force applied to the driving belt 63. And a motor 61 that rotates the rotary shaft 5 via the pulley 62. Further, a bearing 66 is disposed on the outer periphery of the rotating shaft 5.
  • the rotating shaft 5 is connected to a holding unit moving mechanism 65 that moves the holding unit 1 in the vertical direction by moving the rotary shaft 5 in the vertical direction.
  • the processing apparatus includes a processing liquid supply unit 75 that supplies a processing liquid to the wafer W.
  • a front side supply nozzle 71 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the surface of the wafer W is provided.
  • a back surface side supply nozzle 72 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the back surface of the wafer W is provided.
  • the treatment liquid means chemical liquid or pure water.
  • dilute hydrofluoric acid etc. can be used, for example.
  • the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).
  • the holding unit 1 is moved downward by the holding unit moving mechanism 65 and positioned at the lower position (see FIG. 1).
  • the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are moved together by the cleaning unit moving mechanism 55 (see FIGS. 1 and 4A).
  • the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the front surface cleaning mechanism 30 side and is positioned in the open position (see FIG. 4A).
  • the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can be positioned on the back surface side of the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position ( (Refer FIG. 4 (a) (b)). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.
  • the back surface cleaning unit of the back surface cleaning mechanism 40 can be simply moved downward while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned at the open position. 42 can be moved to the back side of the wafer W (see solid line arrow in FIG. 1). For this reason, it is not necessary to provide a gap for allowing the back surface cleaning unit 42 to pass between the wafer W held by the holding unit 1 and the cup 70. As a result, the size of the cup 70 surrounding the wafer W can be reduced.
  • the second substrate cleaning brush (back surface cleaning unit) is used. 42 ′) is positioned on the back side of the wafer W and then moved in the horizontal direction toward the peripheral edge of the wafer W (see the dotted arrow in FIG. 1). For example, it is only necessary to move the back surface cleaning mechanism 40 downward (see the solid line arrow in FIG. 1). For this reason, the number of steps until the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W can be reduced (the number of horizontal movement steps can be reduced). Can be brought into contact with the rear surface of the peripheral edge easily and quickly.
  • the rotation shaft 5 is driven to rotate by the rotation driving unit 60, whereby the wafer W held by the holding unit 11 is rotated (rotation process) (see FIG. 1).
  • a driving force is applied from the motor 61 to the pulley 62 via the driving belt 63, whereby the rotating shaft 5 is driven to rotate.
  • the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface of the wafer W by the surface side supply nozzle 71.
  • the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 1).
  • the following steps are performed while the processing liquid is supplied to the peripheral edge of the wafer W from the front-side supply nozzle 71 and the back-side supply nozzle 72 as described above.
  • the front surface cleaning unit 32 of the front surface cleaning mechanism 30 is brought into contact with the surface of the wafer W (see FIG. 4B). ). Thereafter, a current is passed through the electromagnet 21 in the casing 24 (see the arrow in FIG. 4C), and the magnetic force applied from the electromagnet 21 acts on the permanent magnet 25 provided at the lower end of the back surface cleaning mechanism 40. .
  • the back surface cleaning section 42 of the back surface cleaning mechanism 40 is swung around the swing shaft 45a and positioned at the closed position, and the back surface cleaning section 42 is brought into contact with the back surface of the wafer W (FIG. 4C). )reference).
  • the pressing force applied to the back surface of the peripheral edge of the wafer W from the back surface cleaning unit 42 is adjusted. Can do.
  • the air pressure due to the air flowing in from the upper inflow portion 11 and the air pressure due to the air flowing in from the lower inflow portion 16 it is applied from the surface cleaning portion 32 to the surface of the peripheral portion of the wafer W.
  • the pressing force can be adjusted (see FIG. 2).
  • the pressing force is detected by the measurement sensor 51 and output by the output unit 52.
  • the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the back surface of the peripheral portion of the wafer W can be adjusted from the back surface cleaning mechanism 40.
  • the pressing force applied to the can be adjusted. Therefore, the front surface of the wafer W can be cleaned with a weak force, and the back surface of the wafer W can be cleaned with a strong force. Conversely, the back surface of the wafer W can be cleaned with a weak force, and The surface can be cleaned with a strong force.
  • the surface of the wafer W is cleaned by washing the surface of the wafer W with a weak force and cleaning the back surface of the wafer W with a strong force.
  • the polymer and particles adhering to the back surface of the wafer W can be reliably removed without removing the patterning applied to.
  • the particles adhering to the peripheral portion of the wafer W in the carrier are not dropped, so that other wafers W in the carrier are soiled. Can be prevented.
  • the particles do not float in the water accumulated on the wafer W when the wafer W is exposed and processed, the refractive index of the water can be kept uniform, and the wafer W can be exposed accurately. Can be processed.
  • the front surface cleaning unit 32 and the back surface cleaning unit 42 are composed of hard portions 32a and 42a whose center portions are hard in cross section, and the outer peripheral portions surrounding the center portions are soft portions 32b and softer than the hard portions 32a and 42a. 42b (see FIGS. 3A and 3B).
  • the side end surface (APEX portion) of the peripheral portion of the wafer W is brought into contact with the hard portions 32a and 42a, and the surface of the peripheral portion of the wafer W is formed by the soft portions 32b and 42b.
  • a back surface (bevel part) can be pinched
  • the side end surface (APEX portion) of the peripheral portion of the wafer W that is not subjected to patterning can be cleaned with a stronger force (than the front and back surfaces (bevel portion) of the peripheral portion of the wafer W).
  • the processing liquid supplied from the front-side supply nozzle 71 to the front surface of the wafer W and the processing liquid supplied from the back-side supply nozzle 72 to the back surface of the wafer W may be appropriately changed. Yes (see FIG. 1).
  • the chemical solution may be supplied first from the front surface side supply nozzle 71 and the back surface side supply nozzle 72, then the rinse solution may be supplied, and finally the drying solution may be supplied.
  • the type of processing liquid supplied from the front surface side supply nozzle 71 to the front surface of the wafer W and the type of processing liquid supplied from the back surface side supply nozzle 72 to the back surface of the wafer W can be changed independently. .
  • the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped.
  • the current flowing through the electromagnet 21 in the housing 24 is stopped (or current is passed through the electromagnet 21 in the housing 24 in the reverse direction), and the back surface cleaning unit 42 is centered on the swing shaft 45a. It swings downward and is positioned in the open position.
  • the cleaning unit moving mechanism 55 moves the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 together to move upward.
  • the back surface cleaning unit 42 can be moved from the back surface side to the front surface side of the wafer W only by moving the back surface cleaning mechanism 40 upward (without moving it outward in the peripheral direction of the wafer W).
  • the back surface cleaning unit 42 can be moved easily and quickly.
  • the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.
  • the holding unit 1 is moved upward by the holding unit moving mechanism 65 to be positioned at the delivery position (upper position).
  • the wafer W is removed from the holding unit 1 by a transfer robot (not shown).
  • the housing 24 that accommodates the electromagnet 21 is connected to the surface cleaning mechanism 30, and the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can swing around the swing shaft 45 a. It demonstrated using the aspect connected (refer FIG. 2).
  • the present invention is not limited to this, and as shown in FIG. 5, the casing 24 that houses the electromagnet 21 is disposed below the permanent magnet 25 provided at the lower end of the second base end portion 41, and the second base A guide portion 44 having a guide groove 44a for guiding the end portion 41 and the back surface cleaning portion 42 in the vertical direction may be disposed, and the back surface cleaning portion 42 may be movable in the vertical direction.
  • the surface cleaning mechanism 30 is directly connected to the surface-side adjustment mechanism 10 (without going through the housing 24).
  • the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the pressing force applied from the back surface cleaning mechanism 40 to the rear surface of the peripheral portion of the wafer W is adjusted. Can be adjusted. For this reason, the peripheral portion of the wafer W can be reliably cleaned, and particles can be reliably removed from the peripheral portion of the wafer W.
  • FIGS. 6 to 8 (a)-(d).
  • a housing 24 having an electromagnet 21 disposed therein is connected to the upper end of the front surface cleaning mechanism 30, and a permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40. Then, by passing an electric current through the electromagnet 21, the back surface cleaning mechanism 40 is swung to the surface cleaning mechanism 30 side (upper side) around the rocking shaft 45a.
  • the pressing member 26 is placed below the back surface cleaning mechanism (second cleaning mechanism) 40, and the pressing When the second base end portion 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the member 26, the back surface cleaning mechanism 40 has the surface cleaning mechanism (first cleaning mechanism) 30 side (centering on the swing shaft 145a). It swings upward).
  • connection part 46 is provided in the upper end of the 1st base end part 31, and it extends in the up-down direction at the side surface of this connection part 46, and the surface cleaning mechanism 30 and back surface washing
  • a connecting rod 145 that connects the mechanism 40 is provided.
  • the back surface cleaning mechanism 40 can swing around the swing shaft 145a, and when it is swung to the front surface cleaning mechanism 30 side (upper side), the back surface cleaning mechanism 40 is placed on the back surface (the other surface) of the peripheral portion of the wafer W. It will abut.
  • the second base end portion 41 of the back surface cleaning mechanism 40 is connected to the connecting rod 145. Further, the surface side adjusting mechanism 10 is connected to the upper portion of the surface cleaning mechanism 30.
  • the back surface cleaning mechanism 40 is brought into contact with the back surface cleaning mechanism 40 below the back surface cleaning mechanism 40 so that the back surface cleaning mechanism 40 is centered on the swing shaft 145a.
  • a pressing member 26 that swings is placed on the surface cleaning mechanism 30 side (upper side).
  • the pressing member 26 is connected to the contact portion 27 that contacts the second base end portion 41 of the back surface cleaning mechanism 40, and the contact portion 27.
  • an elastic member 28 for applying an elastic force to the contact portion 27.
  • the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).
  • the holding unit 1 is moved downward by the holding unit moving mechanism 65 and positioned at the lower position (see FIG. 6).
  • the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrally moved downward by the cleaning unit moving mechanism 55 (see FIGS. 6 and 8A).
  • the back surface cleaning portion (second cleaning portion) 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the surface cleaning mechanism 30 side and is positioned in the open position (FIG. 8 ( a)).
  • the rotation shaft 5 is rotationally driven by the rotation driving unit 60 to be held by the holding unit 11.
  • the wafer W is rotated (rotation process) (see FIG. 6).
  • the second base end portion 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the pressing member 26 placed below the back surface cleaning mechanism 40, and the second base end portion 41 and the back surface cleaning portion 42 is swung to the surface cleaning mechanism 30 side (upper side) around the swing shaft 145a (see FIGS. 8B and 8C).
  • the contact portion 27 is given an elastic force by the elastic member 28.
  • the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface (one surface) of the wafer W by the front side supply nozzle 71.
  • the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 6).
  • the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are completely positioned below, the lower surface of the second base end portion 41 and the upper surface of the contact portion 27 are flush with each other (FIG. 8D). )reference).
  • the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is moved to the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position. (Refer to FIGS. 8B and 8C). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.
  • the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped.
  • the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are moved upward together.
  • the second base end portion 41 moves away from the contact portion 27 of the pressing member 26
  • the second base end portion 41 and the back surface cleaning portion 42 are swung downward about the swing shaft 145a, and finally Is positioned in the open position.
  • the back surface cleaning unit 42 is simply moved upward (without moving outward in the peripheral direction of the wafer W). Can be moved from the back surface side to the front surface side of the wafer W, the back surface cleaning unit 42 can be moved easily and quickly.
  • the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.
  • the holding unit 1 is moved upward by the holding unit moving mechanism 65 to be positioned at the delivery position (upper position).
  • the wafer W is removed from the holding unit 1 by a transfer robot (not shown).

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A processing device is provided with a holding section (1) for holding a body to be processed, a rotationally driving section (60) for rotating the body (W) to be processed held by the holding section (1), a first cleaning mechanism (30) making contact with one surface of a peripheral edge section of the body (W) to be processed and cleaning said surface, and a second cleaning mechanism (40) making contact with the other surface of the peripheral edge section of the body (W) to be processed and cleaning the other surface.  The processing device also has a first adjusting mechanism (10) for adjusting pressing force applied from the first cleaning mechanism (30) to said surface of the peripheral edge section, and second adjusting mechanisms (21, 25) for adjusting pressing force applied from the second cleaning mechanism (40) to the other surface of the peripheral edge section.

Description

処理装置Processing equipment 関連する出願の相互参照Cross-reference of related applications
 本願は、2008年6月16日に出願された特願2008-156902号および特願2008-156919号に対して優先権を主張し、当該特願2008-156902号および特願2008-156919号のすべての内容が参照されてここに組み込まれるものとする。 The present application claims priority to Japanese Patent Application Nos. 2008-156902 and 2008-156919 filed on June 16, 2008, and Japanese Patent Application Nos. 2008-156902 and 2008-156919 All contents are referred to and incorporated herein.
技術の分野Technology field
 本発明は、半導体ウエハなどからなる被処理体の周縁部を処理する処理装置に関する。 The present invention relates to a processing apparatus for processing a peripheral portion of a target object made of a semiconductor wafer or the like.
 従来から、基板(被処理体)を保持する保持部と、この基板の周縁部の表面(一方の面)を洗浄するスポンジ状の第1基板洗浄ブラシと、この第1基板洗浄ブラシに対向配置され、基板の周縁部の裏面(他方の面)を洗浄するスポンジ状の第2基板洗浄ブラシと、第1基板洗浄ブラシおよび第2基板洗浄ブラシを、互いに接近および離間させるブラシ接離機構と、を含む、処理装置が知られている(特開2007-157936号公報参照)。 Conventionally, a holding unit that holds a substrate (object to be processed), a sponge-like first substrate cleaning brush that cleans the surface (one surface) of the peripheral portion of the substrate, and a first substrate cleaning brush that is opposed to the first substrate cleaning brush A sponge-like second substrate cleaning brush that cleans the back surface (the other surface) of the peripheral edge of the substrate, and a brush contact / separation mechanism that causes the first substrate cleaning brush and the second substrate cleaning brush to approach and separate from each other; Is known (see JP 2007-157936 A).
 特開2007-157936号公報に記載されたような従来の処理装置によれば、被処理体の周縁部の表面と裏面を洗浄することはできるものの、第一洗浄部から被処理体の周縁部の表面に加わる押圧力と、第二洗浄部から被処理体の周縁部の裏面に加わる押圧力とを制御することはできなかった。このため、従来の処理装置では、以下に示すような問題がある。 According to the conventional processing apparatus as described in Japanese Patent Application Laid-Open No. 2007-157936, the front and back surfaces of the peripheral edge of the object to be processed can be cleaned, but the peripheral edge of the object to be processed from the first cleaning part. It was not possible to control the pressing force applied to the front surface and the pressing force applied to the back surface of the peripheral edge of the object to be processed from the second cleaning section. For this reason, the conventional processing apparatus has the following problems.
 一般に、被処理体の裏面には、除去しづらいポリマーやパーティクルが付着する傾向にある。このため、被処理体の裏面に付着したポリマーやパーティクルを除去するために強い力で洗浄すると、被処理体の表面に施されたパターニングが剥がれることがある。他方、表面に施されたパターニングが剥がれないように弱い力で洗浄すると、裏面に付着したポリマーやパーティクルを除去することができない。 Generally, polymers and particles that are difficult to remove tend to adhere to the back surface of the object to be treated. For this reason, patterning applied to the surface of the object to be processed may be peeled off when cleaning is performed with a strong force to remove the polymer or particles attached to the back surface of the object to be processed. On the other hand, if washing is performed with a weak force so that the patterning applied to the front surface does not peel off, the polymer and particles attached to the back surface cannot be removed.
 また、パーティクルにも様々な種類のものがあるので、付着するパーティクルの種類によっては被処理体から除去しにくいものもある。そして、被処理体の表面に付着するパーティクルの種類と、裏面に付着するパーティクルの種類が異なることもあり、一方の面(例えば表面)に除去しにくいパーティクルが付着し、他方の面(例えば裏面)に除去しやすいパーティクルが付着した場合には、それぞれの面に応じた押圧力で洗浄することができない。 Also, since there are various types of particles, there are some types that are difficult to remove from the object to be treated depending on the type of particles attached. And the kind of particles adhering to the surface of the object to be processed may be different from the kind of particles adhering to the back surface. When particles that are easy to remove adhere to the surface, it cannot be cleaned with a pressing force corresponding to each surface.
 また、別の問題として、特開2007-157936号公報に記載されたような従来の処理装置は、第1基板洗浄ブラシおよび第2基板洗浄ブラシを互いに接近および離間させるように構成されているので、第2基板洗浄ブラシを被処理体の裏面側(下方側)に位置づけ、その後で、被処理体の周縁部に向かって水平方向へ移動させた後、第1基板洗浄ブラシおよび第2基板洗浄ブラシによって被処理体を挟む必要がある。このため、第2基板洗浄ブラシを被処理体の裏面に位置づけるのに、時間がかかってしまう。 Another problem is that a conventional processing apparatus as described in Japanese Patent Application Laid-Open No. 2007-157936 is configured to bring the first substrate cleaning brush and the second substrate cleaning brush closer to and away from each other. The second substrate cleaning brush is positioned on the back side (lower side) of the object to be processed, and then moved in the horizontal direction toward the peripheral edge of the object to be processed, and then the first substrate cleaning brush and the second substrate cleaning are performed. It is necessary to sandwich the object to be processed with a brush. For this reason, it takes time to position the second substrate cleaning brush on the back surface of the object to be processed.
 また、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、保持部で保持された被処理体とカップとの間に、第2基板洗浄ブラシを通過させるだけの間隙を設ける必要がある。このため、保持部によって保持されたウエハの周りを囲むカップの大きさが大きくなってしまう。 Further, in the case where a cup surrounding the object to be processed held by the holding unit is provided, the second substrate cleaning brush is simply passed between the object to be processed held by the holding unit and the cup. It is necessary to provide a gap. For this reason, the size of the cup surrounding the wafer held by the holding unit increases.
 本発明は、表面に施されたパターニングを剥がすことなく、裏面に付着したポリマーやパーティクルを確実に除去したり、それぞれの面に応じた押圧力でそれぞれの面に付着したパーティクルを確実に除去したりすることができる処理装置、および、第二洗浄機構を被処理体の周縁部の裏面に容易かつ迅速に当接させることができ、かつ、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、当該カップの大きさを小さくすることができる処理装置を提供する。 The present invention reliably removes the polymer and particles adhering to the back surface without removing the patterning applied to the front surface, or reliably removes the particles adhering to each surface with the pressing force according to each surface. And the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed, and surrounds the object to be processed held by the holding part. In the case where a cup is provided, a processing apparatus capable of reducing the size of the cup is provided.
 本発明の第一の態様による処理装置は、
 被処理体を保持する保持部と、
 前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
 前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
 前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、
 前記第一洗浄機構から前記周縁部の一方の面に加わる押圧力を調整する第一調整機構と、
 前記第二洗浄機構から前記周縁部の他方の面に加わる押圧力を調整する第二調整機構と、
 を備えている。
The processing apparatus according to the first aspect of the present invention comprises:
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism for cleaning in contact with the other surface of the peripheral edge of the workpiece;
A first adjustment mechanism that adjusts the pressing force applied to one surface of the peripheral edge from the first cleaning mechanism;
A second adjustment mechanism for adjusting the pressing force applied to the other surface of the peripheral edge from the second cleaning mechanism;
It has.
 本発明の第二の態様による処理装置は、
 被処理体を保持する保持部と、
 前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
 前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
 前記第一洗浄機構に連結され、前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、を備え、
 前記第二洗浄機構が、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接する。
The processing apparatus according to the second aspect of the present invention comprises:
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism that is connected to the first cleaning mechanism and that contacts and cleans the other surface of the peripheral portion of the object to be processed;
The second cleaning mechanism can swing about a swing shaft, and abuts against the other surface of the peripheral edge when swinged toward the first cleaning mechanism.
 本発明の第一の態様によれば、第一調整機構によって、第一洗浄機構から被処理体の周縁部の一方の面に加わる押圧力を調整することができ、かつ、第二調整機構によって、第二洗浄機構から被処理体の周縁部の他方の面に加わる押圧力を調整することができる。このため、表面に施されたパターニングを剥がすことなく、裏面に付着したポリマーやパーティクルを確実に除去したり、それぞれの面に応じた押圧力でそれぞれの面に付着したパーティクルを確実に除去したりすることができる。 According to the first aspect of the present invention, the first adjustment mechanism can adjust the pressing force applied from the first cleaning mechanism to one surface of the peripheral edge of the object to be processed, and the second adjustment mechanism The pressing force applied from the second cleaning mechanism to the other surface of the peripheral edge of the object to be processed can be adjusted. For this reason, without removing the patterning applied to the front surface, the polymer and particles adhering to the back surface can be surely removed, or the particles adhering to each surface can be reliably removed with the pressing force according to each surface. can do.
 また、本発明の第二の態様によれば、第二洗浄機構が、揺動軸を中心に揺動可能となり、第一洗浄機構側に揺動されたときに周縁部の他方の面に当接して、当該周縁部の他方の面を洗浄する。このため、第二洗浄機構を被処理体の周縁部の裏面に容易かつ迅速に当接させることができる。また、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、当該カップの大きさを小さくすることもできる。 Further, according to the second aspect of the present invention, the second cleaning mechanism can swing around the swing shaft, and when the second cleaning mechanism swings toward the first cleaning mechanism, the second cleaning mechanism contacts the other surface of the peripheral portion. In contact, the other surface of the peripheral edge is cleaned. For this reason, the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed. Moreover, when the cup surrounding the to-be-processed object hold | maintained by the holding | maintenance part is provided, the magnitude | size of the said cup can also be made small.
本発明の第1の実施の形態による処理装置の構成を示す側方断面図。The side sectional view showing the composition of the processing device by a 1st embodiment of the present invention. 本発明の第1の実施の形態による処理装置の第一調整機構および第二調整機構の構成を示す側方断面図。The side sectional view showing the composition of the 1st adjustment mechanism and the 2nd adjustment mechanism of the processing unit by a 1st embodiment of the present invention. 本発明の第1の実施の形態による処理装置の第一洗浄部および第二洗浄部の構成を示す上方断面図および側方断面図。The upper side sectional view and side sectional view showing the composition of the 1st washing part and the 2nd washing part of the processing device by a 1st embodiment of the present invention. 本発明の第1の実施の形態による処理装置の第一洗浄機構および第二洗浄機構の移動態様を示す概略図。Schematic which shows the movement aspect of the 1st washing | cleaning mechanism and 2nd washing | cleaning mechanism of the processing apparatus by the 1st Embodiment of this invention. 本発明の第1の実施の形態の変形例による処理装置の第一洗浄部および第二洗浄部の構成を示す側方断面図。The sectional side view which shows the structure of the 1st washing | cleaning part of the processing apparatus by the modification of the 1st Embodiment of this invention, and a 2nd washing | cleaning part. 本発明の第2の実施の形態による処理装置の構成を示す側方断面図。Side sectional drawing which shows the structure of the processing apparatus by the 2nd Embodiment of this invention. 本発明の第2の実施の形態による処理装置の第一調整機構の構成を示す側方断面図。Side sectional drawing which shows the structure of the 1st adjustment mechanism of the processing apparatus by the 2nd Embodiment of this invention. 本発明の第2の実施の形態による処理装置の第一洗浄機構および第二洗浄機構の移動態様を示す概略図。Schematic which shows the movement aspect of the 1st washing | cleaning mechanism of the processing apparatus by the 2nd Embodiment of this invention, and a 2nd washing | cleaning mechanism.
第1の実施の形態
 以下、本発明に係る処理装置の第1の実施の形態について、図面を参照して説明する。ここで、図1乃至図5は本発明の第1の実施の形態を示す図である。
First Embodiment Hereinafter, a first embodiment of a processing apparatus according to the present invention will be described with reference to the drawings. Here, FIG. 1 to FIG. 5 are diagrams showing a first embodiment of the present invention.
 図1に示すように、処理装置は、被処理体である半導体ウエハW(以下、単にウエハWと言う)を真空吸着によって保持する保持部1と、保持部1の中心から下方に延びた回転軸5と、この回転軸5を回転させることによって保持部1で保持されたウエハWを回転させる回転駆動部60と、保持部1によって保持されたウエハWの周りを囲むカップ70と、ウエハWの周縁部の表面(一方の面)に当接して洗浄する表面洗浄機構(第一洗浄機構)30と、表面洗浄機構30に連結され、ウエハWの周縁部の裏面(他方の面)に当接して洗浄する裏面洗浄機構(第二洗浄機構)40と、を備えている。 As shown in FIG. 1, the processing apparatus includes a holding unit 1 that holds a semiconductor wafer W (hereinafter simply referred to as a wafer W) that is an object to be processed by vacuum suction, and a rotation that extends downward from the center of the holding unit 1. A shaft 5, a rotation driving unit 60 that rotates the rotating shaft 5 to rotate the wafer W held by the holding unit 1, a cup 70 that surrounds the wafer W held by the holding unit 1, and the wafer W A surface cleaning mechanism (first cleaning mechanism) 30 that contacts and cleans the surface (one surface) of the peripheral portion of the wafer W, and is connected to the surface cleaning mechanism 30 and contacts the back surface (the other surface) of the peripheral portion of the wafer W. And a back surface cleaning mechanism (second cleaning mechanism) 40 for cleaning in contact.
 また、図2に示すように、表面洗浄機構30は、第一基端部31と、第一基端部31の下端に設けられ、ウエハWの周縁部の表面に当接可能となったスポンジ状の表面洗浄部(第一洗浄部)32とを有している。この表面洗浄部32は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部32aからなり、この中心部の周りを囲む外周部が硬質部32aよりも軟らかい軟質部32bからなっている。 As shown in FIG. 2, the surface cleaning mechanism 30 is provided with a first base end portion 31 and a lower end of the first base end portion 31, and can be brought into contact with the surface of the peripheral portion of the wafer W. And a surface cleaning part (first cleaning part) 32 in the form of a plate. As shown in FIGS. 3 (a) and 3 (b), the surface cleaning unit 32 is composed of a hard portion 32a having a hard central portion in the cross section, and an outer peripheral portion surrounding the center portion is softer than the hard portion 32a. It consists of part 32b.
 また、図2に示すように、裏面洗浄機構40は、第二基端部41と、第二基端部41の上端に設けられ、ウエハWの周縁部の裏面に当接可能となったスポンジ状の裏面洗浄部(第二洗浄部)42とを有している。この裏面洗浄部42は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部42aからなり、この中心部の周りを囲む外周部が硬質部42aよりも軟らかい軟質部42bからなっている。 As shown in FIG. 2, the back surface cleaning mechanism 40 is provided with a second base end portion 41 and an upper end of the second base end portion 41, and can be brought into contact with the back surface of the peripheral portion of the wafer W. The back surface washing | cleaning part (2nd washing | cleaning part) 42 of the shape. As shown in FIGS. 3 (a) and 3 (b), the back surface cleaning portion 42 is composed of a hard portion 42a having a hard central portion in the cross section, and an outer peripheral portion surrounding the central portion is softer than the hard portion 42a. It consists of part 42b.
 なお、本実施の形態では、表面洗浄部32と裏面洗浄部42の両方について、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている態様を用いて説明する。しかしながら、これに限られることなく、表面洗浄部32と裏面洗浄部42のいずれか一方のみが、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっていてもよい。 In the present embodiment, for both the front surface cleaning unit 32 and the rear surface cleaning unit 42, the center portion of the cross section is made of hard hard portions 32a, 42a, and the outer peripheral portion surrounding the center portion is the hard portion 32a, A description will be given using an embodiment composed of soft portions 32b and 42b softer than 42a. However, the present invention is not limited to this, and only one of the front surface cleaning unit 32 and the rear surface cleaning unit 42 is composed of hard portions 32a and 42a having a central portion in the cross section, and an outer peripheral portion surrounding the central portion is provided. You may consist of the soft parts 32b and 42b softer than the hard parts 32a and 42a.
 また、図2に示すように、表面洗浄機構30の上端には、内部に電磁石21が配置された筐体24が連結されている。また、この筐体24の上端には、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整する表面側調整機構(第一調整機構)10が連結されている。 Further, as shown in FIG. 2, a casing 24 having an electromagnet 21 disposed therein is connected to the upper end of the surface cleaning mechanism 30. In addition, a top surface adjustment mechanism (first adjustment mechanism) 10 that adjusts the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W is connected to the upper end of the housing 24.
 この表面側調整機構10は、図2に示すように、円筒状のシリンダ12と、このシリンダ12内で上下方向に移動可能なピストン15と、を有している。また、シリンダ12には、ピストン15の上方側に空気を流入するための上方側流入部11と、ピストン15の下方側に空気を流入するための下方側流入部16とが設けられている。なお、上方側流入部11と下方側流入部16の各々は、空気供給部(図示せず)に連通されている。 As shown in FIG. 2, the surface side adjusting mechanism 10 includes a cylindrical cylinder 12 and a piston 15 movable in the vertical direction within the cylinder 12. In addition, the cylinder 12 is provided with an upper inflow portion 11 for flowing air into the upper side of the piston 15 and a lower inflow portion 16 for flowing air into the lower side of the piston 15. In addition, each of the upper side inflow part 11 and the lower side inflow part 16 is connected to the air supply part (not shown).
 また、図2に示すように、ピストン15の上端には、水平方向に延びた被測定部19が連結されている。また、この被測定部19の下端には、被測定部19から加わる押圧力を測定する測定センサ51が当接されている。また、この測定センサ51には、測定センサ51によって検知された押圧力を出力する出力部52が接続されている。 Further, as shown in FIG. 2, a measured part 19 extending in the horizontal direction is connected to the upper end of the piston 15. Further, a measurement sensor 51 for measuring the pressing force applied from the measured part 19 is brought into contact with the lower end of the measured part 19. The measurement sensor 51 is connected to an output unit 52 that outputs a pressing force detected by the measurement sensor 51.
 ここで、上方側流入部11から流入される空気によってピストン15に付与される空気圧と、下方側流入部16から流入される空気によってピストン15に付与される空気圧が調整されることによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力が調整される。 Here, the air pressure applied to the piston 15 by the air flowing in from the upper inflow portion 11 and the air pressure applied to the piston 15 by the air flowing in from the lower inflow portion 16 are adjusted, thereby cleaning the surface. The pressing force applied from the portion 32 to the surface of the peripheral portion of the wafer W is adjusted.
 また、図2に示すように、裏面洗浄機構40の下端には永久磁石25が連結されている。なお、裏面洗浄機構40に設けられた永久磁石25と、この永久磁石25に磁力を加える電磁石21とによって、裏面側調整機構(第二調整機構)が構成されている。なお、電磁石21に流れる電流の大きさ(電磁石21に加えられる電圧の大きさ)が調整されることによって、裏面洗浄部42からウエハWの周縁部の裏面に付与される押圧力が調整される。 Further, as shown in FIG. 2, a permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40. The backside adjustment mechanism (second adjustment mechanism) is configured by the permanent magnet 25 provided in the backside cleaning mechanism 40 and the electromagnet 21 that applies a magnetic force to the permanent magnet 25. The pressing force applied from the back surface cleaning unit 42 to the back surface of the peripheral portion of the wafer W is adjusted by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21). .
 ところで、本実施の形態では、裏面側調整機構(電磁石21および永久磁石25)は、表面側調整機構10によって表面洗浄機構30からウエハWの周縁部の表面に加えられる押圧力よりも大きな押圧力を、裏面洗浄機構40からウエハWの周縁部の裏面に加えることもできるし、逆に、表面側調整機構10によって表面洗浄機構30からウエハWの周縁部の表面に加えられる押圧力よりも小さな押圧力を、裏面洗浄機構40からウエハWの周縁部の裏面に加えることもできるように構成されている。 By the way, in the present embodiment, the back side adjustment mechanism (the electromagnet 21 and the permanent magnet 25) has a pressing force larger than the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral edge of the wafer W by the front side adjustment mechanism 10. Can be applied from the back surface cleaning mechanism 40 to the back surface of the peripheral portion of the wafer W, and conversely, the pressing force applied to the surface of the peripheral portion of the wafer W from the front surface cleaning mechanism 30 by the front surface adjustment mechanism 10 is smaller. The pressing force can be applied to the back surface of the peripheral portion of the wafer W from the back surface cleaning mechanism 40.
 また、図2に示すように、筐体24には、揺動軸45aを中心に揺動可能な連結部材45が設けられている。そして、裏面洗浄機構40は、連結部材45および筐体24を介して、表面洗浄機構30に連結されている。そして、裏面洗浄機構40は揺動軸45aを中心に揺動可能となり、表面洗浄機構30側(上方側)に揺動されたときに(閉鎖位置にあるときに)、ウエハWの周縁部の裏面に当接するようになっている(図4(c)参照)。 Further, as shown in FIG. 2, the casing 24 is provided with a connecting member 45 that can swing around a swing shaft 45a. The back surface cleaning mechanism 40 is connected to the front surface cleaning mechanism 30 via the connecting member 45 and the housing 24. The back surface cleaning mechanism 40 can swing about the swing shaft 45a. When the back surface cleaning mechanism 40 is swung to the front surface cleaning mechanism 30 side (upper side) (when in the closed position), It comes into contact with the back surface (see FIG. 4C).
 また、図1に示すように、表面洗浄機構30には、筐体24および表面側調整機構10を介して、表面洗浄機構30と裏面洗浄機構40を一体に上下方向(ウエハWの表面から裏面に向かう方向)に移動させる洗浄部移動機構55が連結されている。 As shown in FIG. 1, the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are integrated into the front surface cleaning mechanism 30 via the housing 24 and the front surface side adjustment mechanism 10 in the vertical direction (from the front surface of the wafer W to the back surface). The cleaning unit moving mechanism 55 is connected to move in the direction toward the head.
 また、図1に示すように、回転駆動部60は、回転軸5の周縁外方に配置されたプーリ62と、このプーリ62に巻きかけられた駆動ベルト63と、この駆動ベルト63に駆動力を付与することによって、プーリ62を介して回転軸5を回転させるモータ61とを有している。また、回転軸5の周縁外方にはベアリング66が配置されている。また、回転軸5には、この回転軸5を上下方向に移動させることによって、保持部1を上下方向に移動させる保持部移動機構65が連結されている。 Further, as shown in FIG. 1, the rotation driving unit 60 includes a pulley 62 disposed on the outer periphery of the rotating shaft 5, a driving belt 63 wound around the pulley 62, and a driving force applied to the driving belt 63. And a motor 61 that rotates the rotary shaft 5 via the pulley 62. Further, a bearing 66 is disposed on the outer periphery of the rotating shaft 5. The rotating shaft 5 is connected to a holding unit moving mechanism 65 that moves the holding unit 1 in the vertical direction by moving the rotary shaft 5 in the vertical direction.
 また、図1に示すように、処理装置は、ウエハWに処理液を供給する処理液供給部75を備えている。そして、ウエハWの表面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの表面に供給する表面側供給ノズル71が設けられている。また、ウエハWの裏面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの裏面に供給する裏面側供給ノズル72が設けられている。 Further, as shown in FIG. 1, the processing apparatus includes a processing liquid supply unit 75 that supplies a processing liquid to the wafer W. On the front side of the wafer W, a front side supply nozzle 71 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the surface of the wafer W is provided. Further, on the back surface side of the wafer W, a back surface side supply nozzle 72 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the back surface of the wafer W is provided.
 なお、本願で処理液とは、薬液や純水のことを意味している。そして、薬液としては、例えば、希フッ酸などを用いることができる。 In the present application, the treatment liquid means chemical liquid or pure water. And as a chemical | medical solution, dilute hydrofluoric acid etc. can be used, for example.
 次に、このような構成からなる本実施の形態の作用について述べる。 Next, the operation of the present embodiment having such a configuration will be described.
 まず、搬送ロボット(図示せず)によって、キャリア(図示せず)から取り出されたウエハWが、保持部移動機構65により受け渡し位置(上方位置)に位置づけられた保持部1上に載置される(保持工程)。 First, the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).
 次に、保持部移動機構65によって、保持部1が下方に移動させられて下方位置に位置づけられる(図1参照)。 Next, the holding unit 1 is moved downward by the holding unit moving mechanism 65 and positioned at the lower position (see FIG. 1).
 次に、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動させられる(図1および図4(a)参照)。このとき、裏面洗浄機構40の裏面洗浄部42は、表面洗浄機構30側とは反対側(下方側)に揺動されて、開放位置に位置づけられている(図4(a)参照)。 Next, the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are moved together by the cleaning unit moving mechanism 55 (see FIGS. 1 and 4A). At this time, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the front surface cleaning mechanism 30 side and is positioned in the open position (see FIG. 4A).
 このように、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側に位置づけることができる(図4(a)(b)参照)。このため、ウエハWの周りを囲むカップ70の大きさを小さくすることができ、かつ、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。 Thus, according to the present embodiment, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can be positioned on the back surface side of the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position ( (Refer FIG. 4 (a) (b)). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.
 すなわち、特開2007-157936号公報のように、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を、互いに接近および離間させるものであれば、保持部1で保持されたウエハWとカップ70との間に、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を通過させるだけの間隙を設ける必要がある(図1の70’で示された点線、参照)。このため、保持部1によって保持されたウエハWの周りを囲むカップ70の大きさが大きくなる。 That is, as disclosed in Japanese Patent Application Laid-Open No. 2007-157936, if the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) are moved closer to and away from each other, A gap is provided between the wafer W held by the holding unit 1 and the cup 70 so as to allow the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) to pass therethrough. There is a need (see the dotted line 70 ′ in FIG. 1). For this reason, the size of the cup 70 surrounding the wafer W held by the holding unit 1 is increased.
 これに対して、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40を下方へ移動させるだけで、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側へ移動させることができる(図1の実線矢印、参照)。
 このため、保持部1で保持されたウエハWとカップ70との間に、裏面洗浄部42を通過させるための間隙を設ける必要がない。この結果、ウエハWの周りを囲むカップ70の大きさを小さくすることができる。
On the other hand, according to the present embodiment, the back surface cleaning unit of the back surface cleaning mechanism 40 can be simply moved downward while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned at the open position. 42 can be moved to the back side of the wafer W (see solid line arrow in FIG. 1).
For this reason, it is not necessary to provide a gap for allowing the back surface cleaning unit 42 to pass between the wafer W held by the holding unit 1 and the cup 70. As a result, the size of the cup 70 surrounding the wafer W can be reduced.
 また、特開2007-157936号公報に記載されたような従来のものであれば、裏面洗浄部42をウエハWの裏面の周縁部に当接させる際に、第2基板洗浄ブラシ(裏面洗浄部42’)をウエハWの裏面側に位置づけた後に、ウエハWの周縁部に向かって水平方向に移動させる必要があるのに対して(図1の点線矢印、参照)、本実施の形態によれば、裏面洗浄機構40を下方へ移動させるだけでよい(図1の実線矢印、参照)。このため、裏面洗浄部42をウエハWの裏面の周縁部に当接させるまでの工程数を削減することができ(水平方向の移動工程を削減することができ)、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。 Further, in the case of the conventional one described in Japanese Patent Application Laid-Open No. 2007-157936, when the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W, the second substrate cleaning brush (back surface cleaning unit) is used. 42 ′) is positioned on the back side of the wafer W and then moved in the horizontal direction toward the peripheral edge of the wafer W (see the dotted arrow in FIG. 1). For example, it is only necessary to move the back surface cleaning mechanism 40 downward (see the solid line arrow in FIG. 1). For this reason, the number of steps until the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W can be reduced (the number of horizontal movement steps can be reduced). Can be brought into contact with the rear surface of the peripheral edge easily and quickly.
 次に、回転駆動部60により回転軸5が回転駆動されることによって、保持部11で保持されたウエハWが回転される(回転工程)(図1参照)。このとき、モータ61から駆動ベルト63を介してプーリ62に駆動力が付与されることによって、回転軸5が回転駆動される。 Next, the rotation shaft 5 is driven to rotate by the rotation driving unit 60, whereby the wafer W held by the holding unit 11 is rotated (rotation process) (see FIG. 1). At this time, a driving force is applied from the motor 61 to the pulley 62 via the driving belt 63, whereby the rotating shaft 5 is driven to rotate.
 次に、表面側供給ノズル71によって、処理液供給部75から供給された処理液がウエハWの表面に供給され始める。また、同様に、裏面側供給ノズル72によって、処理液供給部75から供給された処理液がウエハWの裏面に供給され始める(処理液供給工程)(図1参照)。なお、以下の工程は、このように表面側供給ノズル71と裏面側供給ノズル72から、ウエハWの周縁部に処理液が供給されている間に行われる。 Next, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface of the wafer W by the surface side supply nozzle 71. Similarly, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 1). The following steps are performed while the processing liquid is supplied to the peripheral edge of the wafer W from the front-side supply nozzle 71 and the back-side supply nozzle 72 as described above.
 このように表面側供給ノズル71および裏面側供給ノズル72から処理液が供給されるときに、表面洗浄機構30の表面洗浄部32がウエハWの表面に当接される(図4(b)参照)。その後、筐体24内の電磁石21に電流が流され(図4(c)の矢印、参照)、裏面洗浄機構40の下端に設けられた永久磁石25に、この電磁石21から加えられる磁力が働く。この結果、裏面洗浄機構40の裏面洗浄部42が揺動軸45aを中心に揺動され、閉鎖位置に位置づけられて、裏面洗浄部42がウエハWの裏面に当接される(図4(c)参照)。 Thus, when the processing liquid is supplied from the front side supply nozzle 71 and the back side supply nozzle 72, the front surface cleaning unit 32 of the front surface cleaning mechanism 30 is brought into contact with the surface of the wafer W (see FIG. 4B). ). Thereafter, a current is passed through the electromagnet 21 in the casing 24 (see the arrow in FIG. 4C), and the magnetic force applied from the electromagnet 21 acts on the permanent magnet 25 provided at the lower end of the back surface cleaning mechanism 40. . As a result, the back surface cleaning section 42 of the back surface cleaning mechanism 40 is swung around the swing shaft 45a and positioned at the closed position, and the back surface cleaning section 42 is brought into contact with the back surface of the wafer W (FIG. 4C). )reference).
 このとき、電磁石21に流れる電流の大きさ(電磁石21に加えられる電圧の大きさ)を調整することによって、裏面洗浄部42からウエハWの周縁部の裏面に付与される押圧力を調整することができる。 At this time, by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21), the pressing force applied to the back surface of the peripheral edge of the wafer W from the back surface cleaning unit 42 is adjusted. Can do.
 また、上方側流入部11から流入される空気による空気圧と、下方側流入部16から流入される空気による空気圧とを調整することによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力を調整することができる(図2参照)。なお、この押圧力は、測定センサ51によって検知され、出力部52によって出力される。 Further, by adjusting the air pressure due to the air flowing in from the upper inflow portion 11 and the air pressure due to the air flowing in from the lower inflow portion 16, it is applied from the surface cleaning portion 32 to the surface of the peripheral portion of the wafer W. The pressing force can be adjusted (see FIG. 2). The pressing force is detected by the measurement sensor 51 and output by the output unit 52.
 上述のように、本実施の形態によれば、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整することができ、かつ、裏面洗浄機構40からウエハWの周縁部の裏面に加わる押圧力を調整することができる。このため、ウエハWの表面を弱い力で洗浄し、かつ、ウエハWの裏面を強い力で洗浄することができるし、逆に、ウエハWの裏面を弱い力で洗浄し、かつ、ウエハWの表面を強い力で洗浄することもできる。 As described above, according to the present embodiment, the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the back surface of the peripheral portion of the wafer W can be adjusted from the back surface cleaning mechanism 40. The pressing force applied to the can be adjusted. Therefore, the front surface of the wafer W can be cleaned with a weak force, and the back surface of the wafer W can be cleaned with a strong force. Conversely, the back surface of the wafer W can be cleaned with a weak force, and The surface can be cleaned with a strong force.
 そして、ウエハWの裏面に除去しにくいポリマーやパーティクルが付着した場合には、ウエハWの表面を弱い力で洗浄し、かつ、ウエハWの裏面を強い力で洗浄することによって、ウエハWの表面に施されたパターニングを剥がすことなく、ウエハWの裏面に付着したポリマーやパーティクルを確実に除去することができる。 When a polymer or particles that are difficult to remove adhere to the back surface of the wafer W, the surface of the wafer W is cleaned by washing the surface of the wafer W with a weak force and cleaning the back surface of the wafer W with a strong force. The polymer and particles adhering to the back surface of the wafer W can be reliably removed without removing the patterning applied to.
 この結果、本実施の形態によれば、以下に例示するような効果を奏することができる。 As a result, according to this embodiment, the following effects can be obtained.
 まず、ウエハWを搬送するときに搬送ロボット(図示せず)のアームとウエハWとの間に、周縁部に残っていたパーティクルが挟まってしまうことが無くなるので、パーティクルによって、ウエハWの表面や裏面が剥離されてしまうことを防止することができる。 First, when the wafer W is transferred, particles remaining on the peripheral edge are not caught between the arm of the transfer robot (not shown) and the wafer W. It is possible to prevent the back surface from being peeled off.
 また、ウエハWをキャリア(図示せず)内に戻した後で、キャリア内でウエハWの周縁部に付着していたパーティクルが落ちてしまうことが無くなるので、キャリア内の他のウエハWを汚してしまうことを防止することができる。 Further, after the wafer W is returned into the carrier (not shown), the particles adhering to the peripheral portion of the wafer W in the carrier are not dropped, so that other wafers W in the carrier are soiled. Can be prevented.
 さらに、ウエハWを露光して処理する際にウエハW上に溜められた水にパーティクルが浮遊することが無くなるので、この水の屈折率を均一に保つことができ、ウエハWを正確に露光して処理することができる。 Furthermore, since the particles do not float in the water accumulated on the wafer W when the wafer W is exposed and processed, the refractive index of the water can be kept uniform, and the wafer W can be exposed accurately. Can be processed.
 ところで、表面洗浄部32と裏面洗浄部42は、横断面の中心部が硬い硬質部32a,42aからなり、この中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている(図3(a)(b)参照)。このため、図3(b)に示すように、ウエハWの周縁部の側端面(APEX部)を硬質部32a,42aに当接させるとともに、軟質部32b,42bによってウエハWの周縁部の表面および裏面(ベベル部)を挟むことができる。 By the way, the front surface cleaning unit 32 and the back surface cleaning unit 42 are composed of hard portions 32a and 42a whose center portions are hard in cross section, and the outer peripheral portions surrounding the center portions are soft portions 32b and softer than the hard portions 32a and 42a. 42b (see FIGS. 3A and 3B). For this reason, as shown in FIG. 3B, the side end surface (APEX portion) of the peripheral portion of the wafer W is brought into contact with the hard portions 32a and 42a, and the surface of the peripheral portion of the wafer W is formed by the soft portions 32b and 42b. And a back surface (bevel part) can be pinched | interposed.
 この結果、パターニングが施されることのないウエハWの周縁部の側端面(APEX部)を(ウエハWの周縁部の表面および裏面(ベベル部)よりも)強い力で洗浄することができる。 As a result, the side end surface (APEX portion) of the peripheral portion of the wafer W that is not subjected to patterning can be cleaned with a stronger force (than the front and back surfaces (bevel portion) of the peripheral portion of the wafer W).
 なお、本実施の形態においては、表面側供給ノズル71からウエハWの表面に供給される処理液と、裏面側供給ノズル72からウエハWの裏面に供給される処理液を、適宜変更することができる(図1参照)。例えば、表面側供給ノズル71と裏面側供給ノズル72から、最初に薬液が供給され、次にリンス液が供給され、最後に乾燥用液が供給されるようにすることができる。なお、表面側供給ノズル71からウエハWの表面に供給される処理液の種類と、裏面側供給ノズル72からウエハWの裏面に供給される処理液の種類とを、独立して変えることもできる。 In the present embodiment, the processing liquid supplied from the front-side supply nozzle 71 to the front surface of the wafer W and the processing liquid supplied from the back-side supply nozzle 72 to the back surface of the wafer W may be appropriately changed. Yes (see FIG. 1). For example, the chemical solution may be supplied first from the front surface side supply nozzle 71 and the back surface side supply nozzle 72, then the rinse solution may be supplied, and finally the drying solution may be supplied. The type of processing liquid supplied from the front surface side supply nozzle 71 to the front surface of the wafer W and the type of processing liquid supplied from the back surface side supply nozzle 72 to the back surface of the wafer W can be changed independently. .
 上述のような処理液によるウエハWの周縁部の所定の処理が終了すると、表面側供給ノズル71と裏面側供給ノズル72からの処理液の供給が停止される。このとき、筐体24内の電磁石21に流れている電流が停止され(または、筐体24内の電磁石21に逆方向で電流が流され)、裏面洗浄部42が揺動軸45aを中心に下方側に揺動され、開放位置に位置づけられる。その後、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって上方へ移動させられる。 When the predetermined processing of the peripheral edge of the wafer W with the processing liquid as described above is completed, the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped. At this time, the current flowing through the electromagnet 21 in the housing 24 is stopped (or current is passed through the electromagnet 21 in the housing 24 in the reverse direction), and the back surface cleaning unit 42 is centered on the swing shaft 45a. It swings downward and is positioned in the open position. Thereafter, the cleaning unit moving mechanism 55 moves the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 together to move upward.
 このとき、裏面洗浄機構40を(ウエハWの周縁方向外方に移動させることなく)上方へ移動させるだけで、裏面洗浄部42をウエハWの裏面側から表面側へ移動させることができるので、裏面洗浄部42を容易かつ迅速に移動させることができる。 At this time, the back surface cleaning unit 42 can be moved from the back surface side to the front surface side of the wafer W only by moving the back surface cleaning mechanism 40 upward (without moving it outward in the peripheral direction of the wafer W). The back surface cleaning unit 42 can be moved easily and quickly.
 次に、回転駆動部60によってウエハWが高速に回転され、ウエハWの周縁部が乾燥される。その後、回転駆動機構60のモータ61が停止され、保持部1によって保持されているウエハWの回転も停止される。 Next, the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.
 次に、保持部移動機構65によって、保持部1が上方に移動させられて受け渡し位置(上方位置)に位置づけられる。 Next, the holding unit 1 is moved upward by the holding unit moving mechanism 65 to be positioned at the delivery position (upper position).
 最後に、搬送ロボット(図示せず)によって、保持部1上からウエハWが除去される。 Finally, the wafer W is removed from the holding unit 1 by a transfer robot (not shown).
 ところで、上記では、電磁石21を収容する筐体24が表面洗浄機構30に連結され、この表面洗浄機構30に、裏面洗浄機構40の裏面洗浄部42が揺動軸45aを中心に揺動可能に連結されている態様を用いて説明した(図2参照)。 By the way, in the above, the housing 24 that accommodates the electromagnet 21 is connected to the surface cleaning mechanism 30, and the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can swing around the swing shaft 45 a. It demonstrated using the aspect connected (refer FIG. 2).
 しかしながら、これに限られることなく、図5に示すように、電磁石21を収容する筐体24が、第二基端部41の下端に設けられた永久磁石25の下方に配置され、第二基端部41と裏面洗浄部42とを上下方向に案内する案内溝44aを有する案内部44が配置され、裏面洗浄部42が上下方向に移動可能となっていてもよい。なお、この場合には、表面洗浄機構30は、(筐体24を介することなく)直接、表面側調整機構10に連結されている。 However, the present invention is not limited to this, and as shown in FIG. 5, the casing 24 that houses the electromagnet 21 is disposed below the permanent magnet 25 provided at the lower end of the second base end portion 41, and the second base A guide portion 44 having a guide groove 44a for guiding the end portion 41 and the back surface cleaning portion 42 in the vertical direction may be disposed, and the back surface cleaning portion 42 may be movable in the vertical direction. In this case, the surface cleaning mechanism 30 is directly connected to the surface-side adjustment mechanism 10 (without going through the housing 24).
 このような態様によっても、やはり、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整することができ、かつ、裏面洗浄機構40からウエハWの周縁部の裏面に加わる押圧力を調整することができる。このため、ウエハWの周縁部の洗浄を確実に行うことができ、ウエハWの周縁部からパーティクルを確実に除去することができる。 Also according to such an aspect, the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the pressing force applied from the back surface cleaning mechanism 40 to the rear surface of the peripheral portion of the wafer W is adjusted. Can be adjusted. For this reason, the peripheral portion of the wafer W can be reliably cleaned, and particles can be reliably removed from the peripheral portion of the wafer W.
第2の実施の形態
 次に、図6乃至図8(a)-(d)により、本発明の第2の実施の形態について説明する。図1乃至図5に示す第1の実施の形態は、表面洗浄機構30の上端に、内部に電磁石21が配置された筐体24が連結され、裏面洗浄機構40の下端に永久磁石25が連結され、電磁石21に電流を流すことによって、裏面洗浄機構40を、揺動軸45aを中心に表面洗浄機構30側(上方側)に揺動させるものであった。これに対して、図6乃至図8(a)-(d)に示す第2の実施の形態は、裏面洗浄機構(第二洗浄機構)40の下方に押圧部材26が載置され、当該押圧部材26の当接部27に裏面洗浄機構40の第二基端部41が当接することによって、裏面洗浄機構40が、揺動軸145aを中心に表面洗浄機構(第一洗浄機構)30側(上方側)に揺動されるものである。
Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIGS. 6 to 8 (a)-(d). In the first embodiment shown in FIGS. 1 to 5, a housing 24 having an electromagnet 21 disposed therein is connected to the upper end of the front surface cleaning mechanism 30, and a permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40. Then, by passing an electric current through the electromagnet 21, the back surface cleaning mechanism 40 is swung to the surface cleaning mechanism 30 side (upper side) around the rocking shaft 45a. On the other hand, in the second embodiment shown in FIGS. 6 to 8A to 8D, the pressing member 26 is placed below the back surface cleaning mechanism (second cleaning mechanism) 40, and the pressing When the second base end portion 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the member 26, the back surface cleaning mechanism 40 has the surface cleaning mechanism (first cleaning mechanism) 30 side (centering on the swing shaft 145a). It swings upward).
 なお、図7に示すように、第一基端部31の上端には連結部46が設けられ、この連結部46の側面には、上下方向に延在して、表面洗浄機構30と裏面洗浄機構40とを連結する連結棒145が設けられている。また、裏面洗浄機構40は、揺動軸145aを中心に揺動可能となり、表面洗浄機構30側(上方側)に揺動されたときに、ウエハWの周縁部の裏面(他方の面)に当接することとなる。また、裏面洗浄機構40の第二基端部41は、連結棒145に連結されている。また、表面洗浄機構30の上部には表面側調整機構10が連結されている。 In addition, as shown in FIG. 7, the connection part 46 is provided in the upper end of the 1st base end part 31, and it extends in the up-down direction at the side surface of this connection part 46, and the surface cleaning mechanism 30 and back surface washing | cleaning are carried out. A connecting rod 145 that connects the mechanism 40 is provided. Further, the back surface cleaning mechanism 40 can swing around the swing shaft 145a, and when it is swung to the front surface cleaning mechanism 30 side (upper side), the back surface cleaning mechanism 40 is placed on the back surface (the other surface) of the peripheral portion of the wafer W. It will abut. The second base end portion 41 of the back surface cleaning mechanism 40 is connected to the connecting rod 145. Further, the surface side adjusting mechanism 10 is connected to the upper portion of the surface cleaning mechanism 30.
 また、図6および図8(a)-(d)に示すように、裏面洗浄機構40の下方には、この裏面洗浄機構40に当接して、裏面洗浄機構40を揺動軸145aを中心に表面洗浄機構30側(上方側)に揺動させる押圧部材26が載置されている。なお、この押圧部材26は、図8(a)-(d)に示すように、裏面洗浄機構40の第二基端部41に当接する当接部27と、当接部27に連結され、当接部27に弾性力を付与する弾性部材28とを有している。 Further, as shown in FIGS. 6 and 8 (a)-(d), the back surface cleaning mechanism 40 is brought into contact with the back surface cleaning mechanism 40 below the back surface cleaning mechanism 40 so that the back surface cleaning mechanism 40 is centered on the swing shaft 145a. A pressing member 26 that swings is placed on the surface cleaning mechanism 30 side (upper side). As shown in FIGS. 8A to 8D, the pressing member 26 is connected to the contact portion 27 that contacts the second base end portion 41 of the back surface cleaning mechanism 40, and the contact portion 27. And an elastic member 28 for applying an elastic force to the contact portion 27.
 その他の構成は、図1乃至図5に示す第1の実施の形態と略同一である。なお、図6乃至図8(a)-(d)に示す第2の実施の形態において、図1乃至図5に示す第1の実施の形態と同一部分には同一符号を付して詳細な説明は省略する。 Other configurations are substantially the same as those of the first embodiment shown in FIGS. In the second embodiment shown in FIGS. 6 to 8 (a)-(d), the same parts as those in the first embodiment shown in FIGS. Description is omitted.
 以下、本実施の形態の作用について述べる。 Hereinafter, the operation of this embodiment will be described.
 まず、搬送ロボット(図示せず)によって、キャリア(図示せず)から取り出されたウエハWが、保持部移動機構65により受け渡し位置(上方位置)に位置づけられた保持部1上に載置される(保持工程)。 First, the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).
 次に、保持部移動機構65によって、保持部1が下方に移動させられて下方位置に位置づけられる(図6参照)。 Next, the holding unit 1 is moved downward by the holding unit moving mechanism 65 and positioned at the lower position (see FIG. 6).
 次に、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動させられ始める(図6および図8(a)参照)。このとき、裏面洗浄機構40の裏面洗浄部(第二洗浄部)42は、表面洗浄機構30側とは反対側(下方側)に揺動されて、開放位置に位置づけられている(図8(a)参照)。 Next, the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrally moved downward by the cleaning unit moving mechanism 55 (see FIGS. 6 and 8A). At this time, the back surface cleaning portion (second cleaning portion) 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the surface cleaning mechanism 30 side and is positioned in the open position (FIG. 8 ( a)).
 このように表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動しているときに、回転駆動部60により回転軸5が回転駆動されることによって、保持部11で保持されたウエハWが回転される(回転工程)(図6参照)。 As described above, when the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are integrally moved downward, the rotation shaft 5 is rotationally driven by the rotation driving unit 60 to be held by the holding unit 11. The wafer W is rotated (rotation process) (see FIG. 6).
 その後、裏面洗浄機構40の第二基端部41が、裏面洗浄機構40の下方に載置された押圧部材26の当接部27に当接して、この第二基端部41と裏面洗浄部42は、揺動軸145aを中心に表面洗浄機構30側(上方側)に揺動される(図8(b)(c)参照)。
 ここで、当接部27には、弾性部材28による弾性力が付与されている。
Thereafter, the second base end portion 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the pressing member 26 placed below the back surface cleaning mechanism 40, and the second base end portion 41 and the back surface cleaning portion 42 is swung to the surface cleaning mechanism 30 side (upper side) around the swing shaft 145a (see FIGS. 8B and 8C).
Here, the contact portion 27 is given an elastic force by the elastic member 28.
 このとき、表面側供給ノズル71によって、処理液供給部75から供給された処理液がウエハWの表面(一方の面)に供給され始める。また、同様に、裏面側供給ノズル72によって、処理液供給部75から供給された処理液がウエハWの裏面に供給され始める(処理液供給工程)(図6参照)。なお、表面洗浄機構30と裏面洗浄機構40が完全に下方に位置づけられているときには、第二基端部41の下面と当接部27の上面とは面一になっている(図8(d)参照)。 At this time, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface (one surface) of the wafer W by the front side supply nozzle 71. Similarly, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 6). When the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are completely positioned below, the lower surface of the second base end portion 41 and the upper surface of the contact portion 27 are flush with each other (FIG. 8D). )reference).
 このように、本実施の形態によれば、第1の実施の形態と同様、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側に位置づけることができる(図8(b)(c)参照)。このため、ウエハWの周りを囲むカップ70の大きさを小さくすることができ、かつ、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。 Thus, according to the present embodiment, as in the first embodiment, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is moved to the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position. (Refer to FIGS. 8B and 8C). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.
 上述のような処理液によるウエハWの周縁部の所定の処理が終了すると、表面側供給ノズル71と裏面側供給ノズル72からの処理液の供給が停止される。次に、表面洗浄機構30と裏面洗浄機構40とが一体となって上方へ移動させられる。ここで、押圧部材26の当接部27から第二基端部41が離れるにつれて、第二基端部41および裏面洗浄部42が揺動軸145aを中心に下方側に揺動され、最終的には開放位置に位置づけられる。 When the predetermined processing of the peripheral edge of the wafer W with the processing liquid as described above is completed, the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped. Next, the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are moved upward together. Here, as the second base end portion 41 moves away from the contact portion 27 of the pressing member 26, the second base end portion 41 and the back surface cleaning portion 42 are swung downward about the swing shaft 145a, and finally Is positioned in the open position.
 このため、本実施の形態によれば、第1の実施の形態と同様、裏面洗浄機構40を(ウエハWの周縁方向外方に移動させることなく)上方へ移動させるだけで、裏面洗浄部42をウエハWの裏面側から表面側へ移動させることができるので、裏面洗浄部42を容易かつ迅速に移動させることができる。 For this reason, according to the present embodiment, as in the first embodiment, the back surface cleaning unit 42 is simply moved upward (without moving outward in the peripheral direction of the wafer W). Can be moved from the back surface side to the front surface side of the wafer W, the back surface cleaning unit 42 can be moved easily and quickly.
 次に、回転駆動部60によってウエハWが高速に回転され、ウエハWの周縁部が乾燥される。その後、回転駆動機構60のモータ61が停止され、保持部1によって保持されているウエハWの回転も停止される。 Next, the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.
 次に、保持部移動機構65によって、保持部1が上方に移動させられて受け渡し位置(上方位置)に位置づけられる。 Next, the holding unit 1 is moved upward by the holding unit moving mechanism 65 to be positioned at the delivery position (upper position).
 最後に、搬送ロボット(図示せず)によって、保持部1上からウエハWが除去される。 Finally, the wafer W is removed from the holding unit 1 by a transfer robot (not shown).

Claims (14)

  1.  被処理体を保持する保持部と、
     前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
     前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
     前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、
     前記第一洗浄機構から前記周縁部の一方の面に加わる押圧力を調整する第一調整機構と、
     前記第二洗浄機構から前記周縁部の他方の面に加わる押圧力を調整する第二調整機構と、
     を備えた処理装置。
    A holding unit for holding the object to be processed;
    A rotation driving unit that rotates the object to be processed held by the holding unit;
    A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
    A second cleaning mechanism for cleaning in contact with the other surface of the peripheral edge of the workpiece;
    A first adjustment mechanism that adjusts the pressing force applied to one surface of the peripheral edge from the first cleaning mechanism;
    A second adjustment mechanism for adjusting the pressing force applied to the other surface of the peripheral edge from the second cleaning mechanism;
    A processing apparatus comprising:
  2.  前記第二調整機構は、前記第二洗浄機構に設けられた永久磁石と、該永久磁石に磁力を加えることによって前記周縁部の他方の面に加わる押圧力を調整する電磁石と、を有する請求項1に記載の処理装置。 The second adjustment mechanism includes a permanent magnet provided in the second cleaning mechanism, and an electromagnet that adjusts a pressing force applied to the other surface of the peripheral portion by applying a magnetic force to the permanent magnet. The processing apparatus according to 1.
  3.  前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有する請求項1に記載の処理装置。 The first cleaning mechanism is capable of abutting against one surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus of Claim 1 which has a 1st washing | cleaning part which consists of these.
  4.  前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有する請求項1に記載の処理装置。 The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus of Claim 1 which has a 2nd washing | cleaning part which consists of.
  5.  前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えた請求項1に記載の処理装置。 2. The moving mechanism connected to the first cleaning mechanism and further moving the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the workpiece to the other surface. Processing equipment.
  6.  前記第二洗浄機構は、前記第一洗浄機構に連結されるとともに、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接する請求項1に記載の処理装置。 The second cleaning mechanism is connected to the first cleaning mechanism, and is swingable about a swing shaft. When the second cleaning mechanism is swung toward the first cleaning mechanism, the other surface of the peripheral portion is The processing apparatus of Claim 1 which contact | abuts.
  7.  前記第二洗浄機構は、前記第一洗浄機構が前記周縁部の前記一方の面に当接した後に、前記揺動軸を中心に該第一洗浄機構側に揺動されて該周縁部の前記他方の面に当接する請求項6に記載の処理装置。 The second cleaning mechanism is swung toward the first cleaning mechanism around the swing shaft after the first cleaning mechanism abuts on the one surface of the peripheral edge, and the second cleaning mechanism The processing apparatus according to claim 6, which is in contact with the other surface.
  8.  前記第二調整機構は、第一調整機構によって前記第一洗浄機構から前記周縁部の一方の面に加えられる押圧力よりも大きな押圧力を、前記第二洗浄機構から前記周縁部の他方の面に加える請求項1に記載の処理装置。 The second adjusting mechanism applies a pressing force larger than the pressing force applied from the first cleaning mechanism to the one surface of the peripheral portion by the first adjusting mechanism, and the other surface of the peripheral portion from the second cleaning mechanism. The processing apparatus of Claim 1 added to.
  9.  被処理体を保持する保持部と、
     前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
     前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
     前記第一洗浄機構に連結され、前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、を備え、
     前記第二洗浄機構は、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接する処理装置。
    A holding unit for holding the object to be processed;
    A rotation driving unit that rotates the object to be processed held by the holding unit;
    A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
    A second cleaning mechanism that is connected to the first cleaning mechanism and that contacts and cleans the other surface of the peripheral portion of the object to be processed;
    The processing apparatus, wherein the second cleaning mechanism is swingable about a swing shaft, and abuts against the other surface of the peripheral edge when swinged toward the first cleaning mechanism.
  10.  前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えた請求項9に記載の処理装置。 The moving mechanism connected to the first cleaning mechanism and further moving the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the workpiece to the other surface. Processing equipment.
  11.  前記第二洗浄機構に当接して、該第二洗浄機構を前記揺動軸を中心に前記第一洗浄機構側に揺動させる押圧部材をさらに備えた請求項9に記載の処理装置。 The processing apparatus according to claim 9, further comprising a pressing member that contacts the second cleaning mechanism and swings the second cleaning mechanism toward the first cleaning mechanism about the swing shaft.
  12.  前記押圧部材は、前記第二洗浄機構に当接する当接部と、該当接部に連結され、該当接部に弾性力を付与する弾性部材とを有する請求項11に記載の処理装置。 The processing apparatus according to claim 11, wherein the pressing member includes a contact portion that contacts the second cleaning mechanism, and an elastic member that is coupled to the corresponding contact portion and applies an elastic force to the corresponding contact portion.
  13.  前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有する請求項9に記載の処理装置。 The first cleaning mechanism is capable of abutting against one surface of the peripheral edge, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus of Claim 9 which has a 1st washing | cleaning part which consists of these.
  14.  前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有する請求項9に記載の処理装置。 The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus of Claim 9 which has a 2nd washing | cleaning part which consists of.
PCT/JP2009/060015 2008-06-16 2009-06-02 Processing device WO2009154075A1 (en)

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Publication number Priority date Publication date Assignee Title
US20210362285A1 (en) * 2020-05-20 2021-11-25 Tokyo Electron Limited Substrate processing apparatus, polishing head, and substrate processing method
US11787006B2 (en) * 2020-05-20 2023-10-17 Tokyo Electron Limited Substrate processing apparatus, polishing head, and substrate processing method
CN116525507A (en) * 2023-07-05 2023-08-01 光微半导体(吉林)有限公司 Flip-chip brush belt cleaning device
CN116525507B (en) * 2023-07-05 2023-08-29 光微半导体(吉林)有限公司 Flip-chip brush belt cleaning device

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