JP4932792B2 - Processing equipment - Google Patents

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JP4932792B2
JP4932792B2 JP2008156919A JP2008156919A JP4932792B2 JP 4932792 B2 JP4932792 B2 JP 4932792B2 JP 2008156919 A JP2008156919 A JP 2008156919A JP 2008156919 A JP2008156919 A JP 2008156919A JP 4932792 B2 JP4932792 B2 JP 4932792B2
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cleaning mechanism
back surface
wafer
surface cleaning
cleaning
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JP2009302394A (en
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公 平 森
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008156919A priority Critical patent/JP4932792B2/en
Priority to PCT/JP2009/060015 priority patent/WO2009154075A1/en
Priority to KR1020107008859A priority patent/KR101175696B1/en
Priority to TW98119745A priority patent/TWI383465B/en
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本発明は、半導体ウエハなどからなる被処理体の周縁部を処理する処理装置に関する。   The present invention relates to a processing apparatus for processing a peripheral portion of a target object made of a semiconductor wafer or the like.

従来から、基板(被処理体)を保持する保持部と、この基板の周縁部の表面(一方の面)を洗浄するスポンジ状の第1基板洗浄ブラシと、この第1基板洗浄ブラシに対向配置され、基板の周縁部の裏面(他方の面)を洗浄するスポンジ状の第2基板洗浄ブラシと、第1基板洗浄ブラシおよび第2基板洗浄ブラシを、互いに接近および離間させるブラシ接離機構と、を含む、処理装置が知られている(特許文献1参照)。
特開2007−157936号公報
Conventionally, a holding unit that holds a substrate (object to be processed), a sponge-like first substrate cleaning brush that cleans the surface (one surface) of the peripheral portion of the substrate, and a first substrate cleaning brush that is opposed to the first substrate cleaning brush A sponge-like second substrate cleaning brush that cleans the back surface (the other surface) of the peripheral edge of the substrate, and a brush contact / separation mechanism that causes the first substrate cleaning brush and the second substrate cleaning brush to approach and separate from each other; Is known (see Patent Document 1).
JP 2007-157936 A

しかしながら、特許文献1に記載された処理装置のように、第1基板洗浄ブラシおよび第2基板洗浄ブラシを互いに接近および離間させるものであれば、第2基板洗浄ブラシを被処理体の裏面側(下方側)に位置づけ、その後で、被処理体の周縁部に向かって水平方向へ移動させた後、第1基板洗浄ブラシおよび第2基板洗浄ブラシによって被処理体を挟む必要がある。このため、第2基板洗浄ブラシを被処理体の裏面に位置づけるのに、時間がかかってしまう。   However, if the first substrate cleaning brush and the second substrate cleaning brush are made to approach and separate from each other as in the processing apparatus described in Patent Document 1, the second substrate cleaning brush is attached to the back side of the object to be processed ( It is necessary to sandwich the object to be processed by the first substrate cleaning brush and the second substrate cleaning brush after being moved in the horizontal direction toward the peripheral edge of the object to be processed. For this reason, it takes time to position the second substrate cleaning brush on the back surface of the object to be processed.

また、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、保持部で保持された被処理体とカップとの間に、第2基板洗浄ブラシを通過させるだけの間隙を設ける必要がある。このため、保持部によって保持されたウエハの周りを囲むカップの大きさが大きくなってしまう。   Further, in the case where a cup surrounding the object to be processed held by the holding unit is provided, the second substrate cleaning brush is simply passed between the object to be processed held by the holding unit and the cup. It is necessary to provide a gap. For this reason, the size of the cup surrounding the wafer held by the holding unit increases.

本発明は、このような点を考慮してなされたものであり、第二洗浄機構を被処理体の周縁部の裏面に容易かつ迅速に当接させることができ、かつ、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、当該カップの大きさを小さくすることができる処理装置を提供することを目的とする。   The present invention has been made in consideration of such points, and the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed and is held by the holding portion. When the cup surrounding the to-be-processed object is provided, it aims at providing the processing apparatus which can make the magnitude | size of the said cup small.

本発明による処理装置は、
被処理体を保持する保持部と、
前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
前記第一洗浄機構に連結され、前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、を備え、
前記第二洗浄機構が、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接する。
The processing apparatus according to the present invention comprises:
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism that is connected to the first cleaning mechanism and that contacts and cleans the other surface of the peripheral edge of the object to be processed;
The second cleaning mechanism can swing about a swing shaft, and abuts against the other surface of the peripheral edge when swinged toward the first cleaning mechanism.

本発明による処理装置において、
前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えたことが好ましい。
In the processing apparatus according to the present invention,
It is preferable to further include a moving mechanism that is connected to the first cleaning mechanism and moves the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the workpiece to the other surface.

本発明による処理装置において、
前記第二洗浄機構に当接して、該第二洗浄機構を前記揺動軸を中心に前記第一洗浄機構側に揺動させる押圧部材をさらに備えたことが好ましい。
In the processing apparatus according to the present invention,
It is preferable to further include a pressing member that contacts the second cleaning mechanism and swings the second cleaning mechanism toward the first cleaning mechanism with the swing shaft as a center.

本発明による処理装置において、
前記押圧部材は、前記第二洗浄機構に当接する当接部と、該当接部に連結され、該当接部に弾性力を付与する弾性部材とを有することが好ましい。
In the processing apparatus according to the present invention,
The pressing member preferably includes a contact portion that contacts the second cleaning mechanism and an elastic member that is connected to the corresponding contact portion and applies an elastic force to the corresponding contact portion.

本発明による処理装置において、
前記第二洗浄機構は、前記第一洗浄機構が前記周縁部の前記一方の面に当接した後に、前記揺動軸を中心に該第一洗浄機構側に揺動されて該周縁部の前記他方の面に当接することが好ましい。
In the processing apparatus according to the present invention,
The second cleaning mechanism is swung toward the first cleaning mechanism around the swing shaft after the first cleaning mechanism abuts on the one surface of the peripheral edge, and the second cleaning mechanism It is preferable to contact the other surface.

本発明による処理装置において、
前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有することが好ましい。
In the processing apparatus according to the present invention,
The first cleaning mechanism is capable of abutting against one surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion It is preferable to have the 1st washing | cleaning part which consists of.

本発明による処理装置において、
前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有することが好ましい。
In the processing apparatus according to the present invention,
The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion It is preferable to have the 2nd washing | cleaning part which consists of.

本発明によれば、第二洗浄機構が、揺動軸を中心に揺動可能となり、第一洗浄機構側に揺動されたときに周縁部の他方の面に当接して、当該周縁部の他方の面を洗浄する。このため、第二洗浄機構を被処理体の周縁部の裏面に容易かつ迅速に当接させることができる。また、保持部によって保持された被処理体の周りを囲むカップが設けられている場合には、当該カップの大きさを小さくすることもできる。   According to the present invention, the second cleaning mechanism can swing around the swing shaft, and when the second cleaning mechanism swings toward the first cleaning mechanism, the second cleaning mechanism comes into contact with the other surface of the peripheral portion, Clean the other side. For this reason, the second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral edge of the object to be processed. Moreover, when the cup surrounding the to-be-processed object hold | maintained by the holding | maintenance part is provided, the magnitude | size of the said cup can also be made small.

発明を実施するための形態BEST MODE FOR CARRYING OUT THE INVENTION

第1の実施の形態
以下、本発明に係る処理装置の第1の実施の形態について、図面を参照して説明する。ここで、図1乃至図4(a)−(d)は本発明の第1の実施の形態を示す図である。
First Embodiment Hereinafter, a first embodiment of a processing apparatus according to the present invention will be described with reference to the drawings. Here, FIG. 1 thru | or FIG. 4 (a)-(d) is a figure which shows the 1st Embodiment of this invention.

図1に示すように、処理装置は、被処理体である半導体ウエハW(以下、単にウエハWとも言う)を真空吸着によって保持する保持部1と、保持部1の中心から下方に延びた回転軸5と、この回転軸5を回転させることによって保持部1で保持されたウエハWを回転させる回転駆動部60と、保持部1によって保持されたウエハWの周りを囲むカップ70と、ウエハWの周縁部の表面(一方の面)に当接して洗浄する表面洗浄機構(第一洗浄機構)30と、表面洗浄機構30に連結され、ウエハWの周縁部の裏面(他方の面)に当接して洗浄する裏面洗浄機構(第二洗浄機構)40と、を備えている。   As shown in FIG. 1, the processing apparatus includes a holding unit 1 that holds a semiconductor wafer W (hereinafter, also simply referred to as a wafer W) that is an object to be processed by vacuum suction, and a rotation that extends downward from the center of the holding unit 1. A shaft 5, a rotation driving unit 60 that rotates the rotating shaft 5 to rotate the wafer W held by the holding unit 1, a cup 70 that surrounds the wafer W held by the holding unit 1, and the wafer W A surface cleaning mechanism (first cleaning mechanism) 30 that contacts and cleans the surface (one surface) of the peripheral portion of the wafer W, and is connected to the surface cleaning mechanism 30 and contacts the back surface (the other surface) of the peripheral portion of the wafer W. And a back surface cleaning mechanism (second cleaning mechanism) 40 for cleaning in contact.

このうち、表面洗浄機構30は、図2に示すように、第一基端部31と、第一基端部31の下端に設けられ、ウエハWの周縁部の表面に当接可能となったスポンジ状の表面洗浄部(第一洗浄部)32とを有している。この表面洗浄部32は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部32aからなり、この中心部の周りを囲む外周部が該硬質部32aよりも軟らかい軟質部32bからなっている。   Among these, as shown in FIG. 2, the surface cleaning mechanism 30 is provided at the first base end portion 31 and the lower end of the first base end portion 31 and can come into contact with the surface of the peripheral portion of the wafer W. And a sponge-like surface cleaning section (first cleaning section) 32. As shown in FIGS. 3 (a) and 3 (b), the surface cleaning section 32 is composed of a hard portion 32a having a hard central portion in the cross section, and an outer peripheral portion surrounding the center portion is softer than the hard portion 32a. It consists of a soft part 32b.

また、図2に示すように、第一基端部31の上端には連結部46が設けられ、この連結部46の側面には、上下方向に延在して、表面洗浄機構30と裏面洗浄機構40とを連結する連結棒45が設けられている。なお、裏面洗浄機構40は、揺動軸45aを中心に揺動可能となり、表面洗浄機構30側(上方側)に揺動されたときに、ウエハWの周縁部の裏面(他方の面)に当接することとなる。   Further, as shown in FIG. 2, a connecting portion 46 is provided at the upper end of the first base end portion 31, and the side surface of the connecting portion 46 extends in the vertical direction so that the front surface cleaning mechanism 30 and the back surface cleaning are performed. A connecting rod 45 that connects the mechanism 40 is provided. The back surface cleaning mechanism 40 can swing about the swing shaft 45a, and when it is swung to the front surface cleaning mechanism 30 side (upper side), the back surface cleaning mechanism 40 is placed on the back surface (the other surface) of the peripheral portion of the wafer W. It will abut.

また、図2に示すように、裏面洗浄機構40は、連結棒45に連結された第二基端部41と、第二基端部41の上端に設けられ、ウエハWの周縁部の裏面に当接可能となったスポンジ状の裏面洗浄部(第二洗浄部)42とを有している。この裏面洗浄部42は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部42aからなり、この中心部の周りを囲む外周部が硬質部42aよりも軟らかい軟質部42bからなっている。   Further, as shown in FIG. 2, the back surface cleaning mechanism 40 is provided on the second base end portion 41 connected to the connecting rod 45 and the upper end of the second base end portion 41, and on the back surface of the peripheral portion of the wafer W. And a sponge-like back surface cleaning portion (second cleaning portion) 42 that can come into contact therewith. As shown in FIGS. 3 (a) and 3 (b), the back surface cleaning portion 42 is composed of a hard portion 42a having a hard central portion in the cross section, and an outer peripheral portion surrounding the central portion is softer than the hard portion 42a. It consists of part 42b.

なお、本実施の形態では、表面洗浄部32と裏面洗浄部42の両方について、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている態様を用いて説明する。しかしながら、これに限られることなく、表面洗浄部32と裏面洗浄部42のいずれか一方のみが、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっていてもよい。   In the present embodiment, for both the front surface cleaning unit 32 and the rear surface cleaning unit 42, the center portion of the cross section is made of hard hard portions 32a, 42a, and the outer peripheral portion surrounding the center portion is the hard portion 32a, A description will be given using an embodiment composed of soft portions 32b and 42b softer than 42a. However, the present invention is not limited to this, and only one of the front surface cleaning unit 32 and the rear surface cleaning unit 42 is composed of hard portions 32a and 42a having a central portion in the cross section, and an outer peripheral portion surrounding the central portion is provided. You may consist of the soft parts 32b and 42b softer than the hard parts 32a and 42a.

また、図2に示すように、表面洗浄機構30の上部には、円筒状のシリンダ12と、このシリンダ12内で上下方向に移動可能なピストン15と、を有する表面側調整機構10が連結されている。このうち、シリンダ12には、ピストン15の上方側に空気を流入するための上方側流入部11と、ピストン15の下方側に空気を流入するための下方側流入部16とが設けられている。なお、上方側流入部11と下方側流入部16の各々は、空気供給部(図示せず)に連通されている。   Further, as shown in FIG. 2, a surface side adjustment mechanism 10 having a cylindrical cylinder 12 and a piston 15 movable in the vertical direction within the cylinder 12 is connected to the upper portion of the surface cleaning mechanism 30. ing. Among these, the cylinder 12 is provided with an upper inflow portion 11 for flowing air into the upper side of the piston 15 and a lower inflow portion 16 for flowing air into the lower side of the piston 15. . In addition, each of the upper side inflow part 11 and the lower side inflow part 16 is connected to the air supply part (not shown).

また、図2に示すように、ピストン15の上端には、水平方向に延びた被測定部19が連結されている。また、この被測定部19の下端には、被測定部19から加わる押圧力を測定する測定センサ51が当接されている。また、この測定センサ51には、測定センサ51によって検知された押圧力を出力する出力部52が接続されている。   Further, as shown in FIG. 2, a measured part 19 extending in the horizontal direction is connected to the upper end of the piston 15. Further, a measurement sensor 51 for measuring the pressing force applied from the measured part 19 is brought into contact with the lower end of the measured part 19. The measurement sensor 51 is connected to an output unit 52 that outputs a pressing force detected by the measurement sensor 51.

ここで、上方側流入部11から流入される空気によってピストン15に付与される空気圧と、下方側流入部16から流入される空気によってピストン15に付与される空気圧が調整されることによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力が調整される。   Here, the air pressure applied to the piston 15 by the air flowing in from the upper inflow portion 11 and the air pressure applied to the piston 15 by the air flowing in from the lower inflow portion 16 are adjusted, thereby cleaning the surface. The pressing force applied from the portion 32 to the surface of the peripheral portion of the wafer W is adjusted.

また、図1および図4(a)−(d)に示すように、裏面洗浄機構40の下方には、この裏面洗浄機構40に当接して、裏面洗浄機構40を揺動軸45aを中心に表面洗浄機構30側(上方側)に揺動させる押圧部材26が載置されている。なお、この押圧部材26は、図4(a)−(d)に示すように、裏面洗浄機構40の第二基端部41に当接する当接部27と、当接部27に連結され、当接部27に弾性力を付与する弾性部材28とを有している。   Further, as shown in FIGS. 1 and 4 (a)-(d), the back surface cleaning mechanism 40 is brought into contact with the back surface cleaning mechanism 40 below the back surface cleaning mechanism 40, and the back surface cleaning mechanism 40 is centered on the swing shaft 45a. A pressing member 26 that swings is placed on the surface cleaning mechanism 30 side (upper side). As shown in FIGS. 4A to 4D, the pressing member 26 is connected to the contact portion 27 that contacts the second base end portion 41 of the back surface cleaning mechanism 40, and the contact portion 27. And an elastic member 28 for applying an elastic force to the contact portion 27.

また、図1に示すように、表面洗浄機構30には、表面側調整機構10を介して、表面洗浄機構30と裏面洗浄機構40を一体に上下方向(ウエハWの表面から裏面に向かう方向)に移動させる洗浄部移動機構55が連結されている。   As shown in FIG. 1, the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrated with the front surface cleaning mechanism 30 via the front surface side adjustment mechanism 10 in the vertical direction (direction from the front surface to the back surface of the wafer W). A cleaning unit moving mechanism 55 is connected to move the cleaning unit.

また、図1に示すように、回転駆動部60は、回転軸5の周縁外方に配置されたプーリ62と、このプーリ62に巻きかけられた駆動ベルト63と、この駆動ベルト63に駆動力を付与することによって、プーリ62を介して回転軸5を回転させるモータ61とを有している。また、回転軸5の周縁外方にはベアリング66が配置されている。また、回転軸5には、この回転軸5を上下方向に移動させることによって、保持部1を上下方向に移動させる保持部移動機構65が連結されている。   Further, as shown in FIG. 1, the rotation driving unit 60 includes a pulley 62 disposed on the outer periphery of the rotating shaft 5, a driving belt 63 wound around the pulley 62, and a driving force applied to the driving belt 63. And a motor 61 that rotates the rotary shaft 5 via the pulley 62. Further, a bearing 66 is disposed on the outer periphery of the rotating shaft 5. The rotating shaft 5 is connected to a holding unit moving mechanism 65 that moves the holding unit 1 in the vertical direction by moving the rotary shaft 5 in the vertical direction.

また、図1に示すように、処理装置は、ウエハWに処理液を供給する処理液供給部75を備えている。そして、ウエハWの表面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの表面に供給する表面側供給ノズル71が設けられている。また、ウエハWの裏面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの裏面に供給する裏面側供給ノズル72が設けられている。   In addition, as shown in FIG. 1, the processing apparatus includes a processing liquid supply unit 75 that supplies a processing liquid to the wafer W. On the front side of the wafer W, a front side supply nozzle 71 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the surface of the wafer W is provided. Further, on the back surface side of the wafer W, a back surface side supply nozzle 72 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the back surface of the wafer W is provided.

なお、本願で処理液とは、薬液や純水のことを意味している。そして、薬液としては、例えば、希フッ酸などを用いることができる。   In the present application, the treatment liquid means a chemical solution or pure water. And as a chemical | medical solution, dilute hydrofluoric acid etc. can be used, for example.

次に、このような構成からなる本実施の形態の作用について述べる。   Next, the operation of the present embodiment having such a configuration will be described.

まず、搬送ロボット(図示せず)によって、キャリア(図示せず)から取り出されたウエハWが、保持部移動機構65により受け渡し位置(上方位置)に位置づけられた保持部1上に載置される(保持工程)。   First, the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).

次に、保持部移動機構65によって、保持部1が下方に移動させられて下方位置に位置づけられる(図1参照)。   Next, the holding part moving mechanism 65 moves the holding part 1 downward and positions it at a lower position (see FIG. 1).

次に、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動させられ始める(図1および図4(a)参照)。このとき、裏面洗浄機構40の裏面洗浄部42は、表面洗浄機構30側とは反対側(下方側)に揺動されて、開放位置に位置づけられている(図4(a)参照)。   Next, the cleaning unit moving mechanism 55 causes the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 to move together downward (see FIGS. 1 and 4A). At this time, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the front surface cleaning mechanism 30 side and is positioned in the open position (see FIG. 4A).

このように表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動しているときに、回転駆動部60により回転軸5が回転駆動されることによって、保持部11で保持されたウエハWが回転される(回転工程)(図1参照)。このとき、モータ61から駆動ベルト63を介してプーリ62に駆動力が付与されることによって、回転軸5が回転駆動される。   As described above, when the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are integrally moved downward, the rotation shaft 5 is rotationally driven by the rotation driving unit 60 to be held by the holding unit 11. The wafer W is rotated (rotation process) (see FIG. 1). At this time, a driving force is applied from the motor 61 to the pulley 62 via the driving belt 63, whereby the rotating shaft 5 is driven to rotate.

その後、裏面洗浄機構40の第二基端部41が、裏面洗浄機構40の下方に載置された押圧部材26の当接部27に当接して、この第二基端部41と裏面洗浄部42は、揺動軸45aを中心に表面洗浄機構30側(上方側)に揺動される(図4(b)(c)参照)。ここで、当接部27には、弾性部材28による弾性力が付与されている。   Thereafter, the second base end portion 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the pressing member 26 placed below the back surface cleaning mechanism 40, and the second base end portion 41 and the back surface cleaning portion 42 is swung to the surface cleaning mechanism 30 side (upper side) around the swing shaft 45a (see FIGS. 4B and 4C). Here, the contact portion 27 is given an elastic force by the elastic member 28.

このとき、表面側供給ノズル71によって、処理液供給部75から供給された処理液がウエハWの表面に供給され始める。また、同様に、裏面側供給ノズル72によって、処理液供給部75から供給された処理液がウエハWの裏面に供給され始める(処理液供給工程)(図1参照)。なお、以下の工程は、このように表面側供給ノズル71と裏面側供給ノズル72から、ウエハWの周縁部に処理液が供給されている間に行われる。   At this time, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface of the wafer W by the front side supply nozzle 71. Similarly, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 1). The following steps are performed while the processing liquid is supplied to the peripheral edge of the wafer W from the front-side supply nozzle 71 and the back-side supply nozzle 72 as described above.

なお、表面洗浄機構30と裏面洗浄機構40が完全に下方に位置づけられているときには、第二基端部41の下面と当接部27の上面とは面一になっている(図4(d)参照)。   When the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are completely positioned below, the lower surface of the second base end portion 41 and the upper surface of the contact portion 27 are flush with each other (FIG. 4D). )reference).

このように、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側に位置づけることができる(図4(b)(c)参照)。このため、ウエハWの周りを囲むカップ70の大きさを小さくすることができ、かつ、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。   Thus, according to the present embodiment, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can be positioned on the back surface side of the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position ( (Refer FIG.4 (b) (c)). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.

すなわち、特許文献1のように、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を、互いに接近および離間させるものであれば、保持部1で保持されたウエハWとカップ70との間に、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を通過させるだけの間隙を設ける必要がある(図1の70’で示された点線参照)。このため、保持部1によって保持されたウエハWの周りを囲むカップ70の大きさが大きくなる。   That is, as in Patent Document 1, if the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) are made to approach and separate from each other, the holding unit 1 It is necessary to provide a gap between the held wafer W and the cup 70 so as to allow the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) to pass ( (See the dotted line 70 'in FIG. 1). For this reason, the size of the cup 70 surrounding the wafer W held by the holding unit 1 is increased.

これに対して、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40を下方へ移動させるだけで、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側へ移動させることができる(図1の実線矢印、参照)。このため、保持部1で保持されたウエハWとカップ70との間に、裏面洗浄部42を通過させるための間隙を設ける必要がない。この結果、ウエハWの周りを囲むカップ70の大きさを小さくすることができる。   On the other hand, according to the present embodiment, the back surface cleaning unit of the back surface cleaning mechanism 40 can be simply moved downward while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned at the open position. 42 can be moved to the back side of the wafer W (see solid line arrow in FIG. 1). For this reason, it is not necessary to provide a gap for allowing the back surface cleaning unit 42 to pass between the wafer W held by the holding unit 1 and the cup 70. As a result, the size of the cup 70 surrounding the wafer W can be reduced.

また、特許文献1に記載されたような従来のものであれば、第2基板洗浄ブラシ(裏面洗浄部42’)をウエハWの裏面の周縁部に当接させる際に、第2基板洗浄ブラシ(裏面洗浄部42’)をウエハWの裏面側(下方側)に位置づけた後に、第1基板洗浄ブラシ(表面洗浄部41’)および第2基板洗浄ブラシ(裏面洗浄部42’)をウエハWの周縁部に向かって水平方向に移動させ、その後、第1基板洗浄ブラシ(表面洗浄部41’)および第2基板洗浄ブラシ(裏面洗浄部42’)によってウエハWを挟む必要があるのに対して(図1の点線矢印、参照)、本実施の形態によれば、裏面洗浄機構40を下方へ移動させた後、表面洗浄部41および裏面洗浄部42によってウエハWを挟むだけでよい(図1の実線矢印、参照)。このため、裏面洗浄部42をウエハWの裏面の周縁部に当接させるまでの工程数を削減することができ(第1基板洗浄ブラシ(表面洗浄部41’)および第2基板洗浄ブラシ(裏面洗浄部42’)を水平方向の移動工程を削減することができ)、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。   Further, in the case of the conventional one described in Patent Document 1, when the second substrate cleaning brush (back surface cleaning unit 42 ′) is brought into contact with the peripheral edge of the back surface of the wafer W, the second substrate cleaning brush is used. After the (back surface cleaning unit 42 ′) is positioned on the back surface side (lower side) of the wafer W, the first substrate cleaning brush (front surface cleaning unit 41 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) are mounted on the wafer W. The wafer W needs to be moved in the horizontal direction toward the peripheral edge of the wafer, and then the wafer W must be sandwiched between the first substrate cleaning brush (front surface cleaning portion 41 ′) and the second substrate cleaning brush (back surface cleaning portion 42 ′). According to the present embodiment, after moving the back surface cleaning mechanism 40 downward, it is only necessary to sandwich the wafer W between the front surface cleaning unit 41 and the back surface cleaning unit 42 (see FIG. 1). (See solid line arrow 1). Therefore, it is possible to reduce the number of steps until the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W (the first substrate cleaning brush (front surface cleaning unit 41 ′) and the second substrate cleaning brush (back surface). The cleaning unit 42 ′) can be reduced in the horizontal movement step), and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.

なお、このように、ウエハWの周縁部の表面が表面洗浄部32に当接され、ウエハWの周縁部の裏面が裏面洗浄部42に当接されているときには、上方側流入部11から流入される空気による空気圧と、下方側流入部16から流入される空気による空気圧とを調整することによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力を調整することができる(図2参照)。このとき、ウエハWの周縁部の表面に付与される押圧力は、測定センサ51によって検知され、出力部52によって出力される。   As described above, when the front surface of the peripheral portion of the wafer W is in contact with the front surface cleaning unit 32 and the back surface of the peripheral portion of the wafer W is in contact with the back surface cleaning unit 42, the wafer W flows from the upper inflow portion 11. By adjusting the air pressure generated by the air to be applied and the air pressure generated by the air flowing in from the lower inflow portion 16, the pressing force applied from the surface cleaning unit 32 to the surface of the peripheral portion of the wafer W can be adjusted. (See FIG. 2). At this time, the pressing force applied to the surface of the peripheral edge of the wafer W is detected by the measurement sensor 51 and output by the output unit 52.

また、表面洗浄部32と裏面洗浄部42は、横断面の中心部が硬い硬質部32a,42aからなり、この中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている(図3(a)(b)参照)。このため、図3(b)に示すように、ウエハWの周縁部の側端面(APEX部)を硬質部32a,42aに当接させるとともに、軟質部32b,42bによってウエハWの周縁部の表面および裏面(ベベル部)を挟むことができる。   Further, the front surface cleaning unit 32 and the back surface cleaning unit 42 are composed of hard portions 32a and 42a having a central portion in a cross section, and the outer peripheral portion surrounding the center portion is softer than the hard portions 32a and 42a. 42b (see FIGS. 3A and 3B). For this reason, as shown in FIG. 3B, the side end surface (APEX portion) of the peripheral portion of the wafer W is brought into contact with the hard portions 32a and 42a, and the surface of the peripheral portion of the wafer W is formed by the soft portions 32b and 42b. And a back surface (bevel part) can be pinched | interposed.

この結果、パターニングが施されることのないウエハWの周縁部の側端面(APEX部)を(ウエハWの周縁部の表面および裏面(ベベル部)よりも)強い力で洗浄することができる。   As a result, the side end face (APEX part) of the peripheral part of the wafer W that is not subjected to patterning can be cleaned with a stronger force (than the front and back surfaces (bevel part) of the peripheral part of the wafer W).

なお、本実施の形態において、表面側供給ノズル71からウエハWの表面に供給される処理液と、裏面側供給ノズル72からウエハWの裏面に供給される処理液を、適宜変更することができる(図1参照)。例えば、表面側供給ノズル71と裏面側供給ノズル72から、最初に薬液が供給され、次にリンス液が供給され、最後に乾燥液が供給されるようにすることができる。ここで、表面側供給ノズル71からウエハWの表面に供給される処理液の種類と、裏面側供給ノズル72からウエハWの裏面に供給される処理液の種類を、独立して変えることもできる。   In the present embodiment, the processing liquid supplied from the front-side supply nozzle 71 to the front surface of the wafer W and the processing liquid supplied from the back-side supply nozzle 72 to the back surface of the wafer W can be appropriately changed. (See FIG. 1). For example, the chemical liquid may be supplied first from the front surface side supply nozzle 71 and the back surface side supply nozzle 72, then the rinse liquid may be supplied, and finally the dry liquid may be supplied. Here, the type of processing liquid supplied from the front surface side supply nozzle 71 to the front surface of the wafer W and the type of processing liquid supplied from the back surface side supply nozzle 72 to the back surface of the wafer W can be changed independently. .

上述のような処理液によるウエハWの周縁部の所定の処理が終了すると、表面側供給ノズル71と裏面側供給ノズル72からの処理液の供給が停止される。次に、表面洗浄機構30と裏面洗浄機構40とが一体となって上方へ移動させられる。ここで、押圧部材26の当接部27から第二基端部41が離れるにつれて、第二基端部41および裏面洗浄部42が揺動軸45aを中心に下方側に揺動され、最終的には開放位置に位置づけられる。   When the predetermined processing of the peripheral portion of the wafer W with the processing liquid as described above is completed, the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped. Next, the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are moved upward together. Here, as the second base end portion 41 is separated from the contact portion 27 of the pressing member 26, the second base end portion 41 and the back surface cleaning portion 42 are swung downward about the swing shaft 45a, and finally Is positioned in the open position.

このため、本実施の形態によれば、裏面洗浄機構40を(ウエハWの周縁方向外方に移動させることなく)上方へ移動させるだけで、裏面洗浄部42をウエハWの裏面側から表面側へ移動させることができるので、裏面洗浄部42を容易かつ迅速に移動させることができる。   Therefore, according to the present embodiment, the back surface cleaning unit 42 is moved from the back surface side to the front surface side of the wafer W only by moving the back surface cleaning mechanism 40 upward (without moving it outward in the peripheral direction of the wafer W). Therefore, the back surface cleaning unit 42 can be easily and quickly moved.

次に、回転駆動部60によってウエハWが高速に回転され、ウエハWの周縁部が乾燥される。その後、回転駆動機構60のモータ61が停止され、保持部1によって保持されているウエハWの回転も停止される。   Next, the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.

次に、保持部移動機構65によって、保持部1が上方に移動させられて受け渡し位置(上方位置)に位置づけられる。   Next, the holding part moving mechanism 65 moves the holding part 1 upward and positions it at the delivery position (upper position).

次に、搬送ロボット(図示せず)によって、保持部1上からウエハWが除去される。   Next, the wafer W is removed from the holding unit 1 by a transfer robot (not shown).

第2の実施の形態
次に、図5および図6(a)−(c)により、本発明の第2の実施の形態について説明する。図1乃至図4(a)−(d)に示す第1の実施の形態は、裏面洗浄機構40の下方に載置された押圧部材26の当接部27に、裏面洗浄機構40の第二基端部41が当接することによって、裏面洗浄機構40が、揺動軸45aを中心に表面洗浄機構30側(上方側)に揺動される態様であった。これに対して、図5および図6(a)−(c)に示す第2の実施の形態は、表面洗浄機構30の上端に、内部に電磁石21が配置された筐体24が連結され、裏面洗浄機構40の下端に永久磁石25が連結され、電磁石21に電流を流すことによって、裏面洗浄機構40を、揺動軸45aを中心に表面洗浄機構30側(上方側)に揺動させるものである。その他の構成は、図1乃至図4に示す第1の実施の形態と略同一である。
Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIGS. 5 and 6A to 6C. In the first embodiment shown in FIGS. 1 to 4 (a) to 4 (d), the second surface cleaning mechanism 40 is placed on the contact portion 27 of the pressing member 26 mounted below the back surface cleaning mechanism 40. The back surface cleaning mechanism 40 was swung to the surface cleaning mechanism 30 side (upper side) about the rocking shaft 45a when the base end portion 41 abuts. On the other hand, in the second embodiment shown in FIG. 5 and FIGS. 6A to 6C, a housing 24 having an electromagnet 21 disposed therein is connected to the upper end of the surface cleaning mechanism 30. The permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40, and the current is passed through the electromagnet 21, thereby swinging the back surface cleaning mechanism 40 to the surface cleaning mechanism 30 side (upper side) about the swing shaft 45a. It is. Other configurations are substantially the same as those of the first embodiment shown in FIGS.

図5および図6(a)−(c)に示す第2の実施の形態において、図1乃至図4(a)−(d)に示す第1の実施の形態と同一部分には同一符号を付して詳細な説明は省略する。   In the second embodiment shown in FIGS. 5 and 6 (a)-(c), the same parts as those in the first embodiment shown in FIGS. 1 to 4 (a)-(d) are denoted by the same reference numerals. Detailed description will be omitted.

本実施の形態でも、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40を下方へ移動させるだけで、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側へ移動させることができる(図6(a)−(c)参照)。このため、保持部1で保持されたウエハWとカップ70との間に、裏面洗浄部42を通過させるための間隙を設ける必要がなく、ウエハWの周りを囲むカップ70の大きさを小さくすることができる(図1参照)。   Also in the present embodiment, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is moved to the back side of the wafer W only by moving the back surface cleaning mechanism 40 downward while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned at the open position. (See FIGS. 6A to 6C). Therefore, it is not necessary to provide a gap for allowing the back surface cleaning unit 42 to pass between the wafer W held by the holding unit 1 and the cup 70, and the size of the cup 70 surrounding the wafer W is reduced. (See FIG. 1).

また、裏面洗浄部42をウエハWの裏面の周縁部に当接させる際に、裏面洗浄機構40を、水平方向に移動させることなく下方へ移動させるだけでよい(図6(a)−(c)参照)。このため、裏面洗浄部42をウエハWの裏面の周縁部に当接させるまでの工程数を削減することができ、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。   Further, when the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W, the back surface cleaning mechanism 40 may be moved downward without moving in the horizontal direction (FIGS. 6A to 6C). )reference). For this reason, the number of steps until the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W can be reduced, and the back surface cleaning unit 42 is easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W. be able to.

さらに、本実施の形態では、電磁石21に流れる電流の大きさ(電磁石21に加えられる電圧の大きさ)を調整することによって、裏面洗浄部42からウエハWの周縁部の裏面に付与される押圧力を調整することができる(図6(c)参照)。   Furthermore, in the present embodiment, by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21), the pressing force applied from the back surface cleaning unit 42 to the back surface of the peripheral portion of the wafer W. The pressure can be adjusted (see FIG. 6C).

このため、本実施の形態によれば、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整することができ、かつ、裏面洗浄機構40からウエハWの周縁部の裏面に加わる押圧力を調整することができる。この結果、ウエハWの周縁部の洗浄を確実に行うことができ、ウエハWの周縁部からパーティクルを確実に除去することができる。   For this reason, according to the present embodiment, the pressing force applied from the front surface cleaning mechanism 30 to the peripheral surface of the wafer W can be adjusted, and the back surface cleaning mechanism 40 applies the rear surface of the peripheral portion of the wafer W. The pressing force can be adjusted. As a result, the peripheral edge of the wafer W can be reliably cleaned, and the particles can be reliably removed from the peripheral edge of the wafer W.

なお、本実施の形態において、ウエハWの周縁部を洗浄するときには、裏面側調整機構(電磁石21および永久磁石25)は、表面側調整機構10によって表面洗浄機構30の表面洗浄部32からウエハWの周縁部の表面に加えられる押圧力よりも大きな押圧力を、裏面洗浄機構40のからウエハWの周縁部の裏面に加える。   In this embodiment, when cleaning the peripheral portion of the wafer W, the back surface side adjustment mechanism (the electromagnet 21 and the permanent magnet 25) is moved from the surface cleaning unit 32 of the surface cleaning mechanism 30 by the front surface side adjustment mechanism 10. A pressing force larger than the pressing force applied to the surface of the peripheral edge of the wafer W is applied from the back surface cleaning mechanism 40 to the back surface of the peripheral edge of the wafer W.

このため、パターニングが施されることのないウエハWの周縁部の裏面を(パターニングが施されることのあるウエハWの周縁部の表面よりも)強い力で洗浄することができ、ウエハWの周縁部の裏面をより確実に洗浄することができる。   For this reason, the back surface of the peripheral portion of the wafer W that is not subjected to patterning can be cleaned with a stronger force (than the surface of the peripheral portion of the wafer W that is subject to patterning). The back surface of the peripheral edge can be more reliably cleaned.

本発明の第1の実施の形態による処理装置の構成を示す側方断面図。The side sectional view showing the composition of the processing device by a 1st embodiment of the present invention. 本発明の第1の実施の形態による処理装置の第一調整機構および第二調整機構の構成を示す側方断面図。The side sectional view showing the composition of the 1st adjustment mechanism and the 2nd adjustment mechanism of the processing unit by a 1st embodiment of the present invention. 本発明の第1の実施の形態による処理装置の第一洗浄部および第二洗浄部の構成を示す上方断面図。The upper sectional view showing the composition of the 1st washing part of the processing device by a 1st embodiment of the present invention, and the 2nd washing part. 本発明の第1の実施の形態による処理装置の第二洗浄機構の移動態様を示す概略図。Schematic which shows the movement aspect of the 2nd washing | cleaning mechanism of the processing apparatus by the 1st Embodiment of this invention. 本発明の第2の実施の形態による処理装置の第一調整機構および第二調整機構の構成を示す側方断面図。Side sectional drawing which shows the structure of the 1st adjustment mechanism of the processing apparatus by the 2nd Embodiment of this invention, and a 2nd adjustment mechanism. 本発明の第2の実施の形態による処理装置の第二洗浄機構の移動態様を示す概略図。Schematic which shows the movement aspect of the 2nd washing | cleaning mechanism of the processing apparatus by the 2nd Embodiment of this invention.

符号の説明Explanation of symbols

1 保持部
10 表面側調整機構(第一調整機構)
21 電磁石
25 永久磁石
30 表面洗浄機構(第一洗浄機構)
32 表面洗浄部(第一洗浄部)
32a 硬質部
32b 軟質部
40 裏面洗浄機構(第二洗浄機構)
42 裏面洗浄部(第二洗浄部)
42a 硬質部
42b 軟質部
45 連結棒
45a 揺動軸
55 洗浄部移動機構(移動機構)
60 回転駆動部
65 保持部移動機構
70 カップ
W ウエハ(被処理体)
1 holding part 10 surface side adjustment mechanism (first adjustment mechanism)
21 Electromagnet 25 Permanent magnet 30 Surface cleaning mechanism (first cleaning mechanism)
32 Surface cleaning section (first cleaning section)
32a Hard part 32b Soft part 40 Back surface cleaning mechanism (second cleaning mechanism)
42 Back surface cleaning section (second cleaning section)
42a Hard part 42b Soft part 45 Connecting rod 45a Oscillating shaft 55 Cleaning part moving mechanism (moving mechanism)
60 Rotation Drive Unit 65 Holding Unit Movement Mechanism 70 Cup W Wafer (Subject)

Claims (6)

被処理体を保持する保持部と、
前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
前記第一洗浄機構に連結され、前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、を備え、
前記第二洗浄機構は、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接することを特徴とする処理装置。
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism that is connected to the first cleaning mechanism and that contacts and cleans the other surface of the peripheral edge of the object to be processed;
The processing apparatus, wherein the second cleaning mechanism is swingable about a swing shaft, and abuts against the other surface of the peripheral edge when swinged toward the first cleaning mechanism.
前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えたことを特徴とする請求項1に記載の処理装置。   And a moving mechanism that is connected to the first cleaning mechanism and moves the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the object to be processed to the other surface. The processing apparatus according to claim 1. 前記第二洗浄機構に当接して、該第二洗浄機構を前記揺動軸を中心に前記第一洗浄機構側に揺動させる押圧部材をさらに備えたことを特徴とする請求項1または2のいずれか1項に記載の処理装置。   3. The pressing member according to claim 1, further comprising a pressing member that contacts the second cleaning mechanism and swings the second cleaning mechanism toward the first cleaning mechanism about the swing shaft. The processing apparatus of any one. 前記押圧部材は、前記第二洗浄機構に当接する当接部と、該当接部に連結され、該当接部に弾性力を付与する弾性部材とを有することを特徴とする請求項3に記載の処理装置。   The said pressing member has a contact part contact | abutted to said 2nd washing | cleaning mechanism, and an elastic member connected with the applicable contact part, and giving an elastic force to the applicable contact part. Processing equipment. 前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有することを特徴とする請求項1乃至4のいずれか1項に記載の処理装置。   The first cleaning mechanism is capable of abutting against one surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus according to claim 1, further comprising a first cleaning unit made of 前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有することを特徴とする請求項1乃至5のいずれか1項に記載の処理装置。   The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus according to claim 1, further comprising a second cleaning unit made of
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