KR101175696B1 - Processing device - Google Patents

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Publication number
KR101175696B1
KR101175696B1 KR1020107008859A KR20107008859A KR101175696B1 KR 101175696 B1 KR101175696 B1 KR 101175696B1 KR 1020107008859 A KR1020107008859 A KR 1020107008859A KR 20107008859 A KR20107008859 A KR 20107008859A KR 101175696 B1 KR101175696 B1 KR 101175696B1
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South Korea
Prior art keywords
cleaning mechanism
wafer
washing
cleaning
peripheral portion
Prior art date
Application number
KR1020107008859A
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Korean (ko)
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KR20100075532A (en
Inventor
코헤이 모리
Original Assignee
도쿄엘렉트론가부시키가이샤
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Priority claimed from JP2008156919A external-priority patent/JP4932792B2/en
Priority claimed from JP2008156902A external-priority patent/JP5026351B2/en
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20100075532A publication Critical patent/KR20100075532A/en
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Publication of KR101175696B1 publication Critical patent/KR101175696B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

The processing apparatus includes a holding unit 1 for holding a target object, a rotation drive unit 60 for rotating the target object W held by the holding unit 1, and one of the peripheral edges of the target object W. The 1st cleaning mechanism 30 which contacts a surface and wash | cleans, and the 2nd cleaning mechanism 40 which contacts and washes the other surface of the periphery of the to-be-processed object W are provided. The processing apparatus is applied to the first adjustment mechanism 10 for adjusting the pressure applied to one surface of the peripheral portion from the first cleaning mechanism 30 and the other surface of the peripheral portion from the second cleaning mechanism 40. Further provided are second adjusting mechanisms 21 and 25 for adjusting the pressing force.

Figure R1020107008859

Description

Processing Unit {PROCESSING DEVICE}

This application claims priority to Patent Application Publication No. 2008-156902 and Patent Application Publication 2008-156919 for which it applied on June 16, 2008, and all the content of the said patent application publication 2008-156902 and the patent application publication 2008-156919 It is hereby incorporated by reference.

The present invention relates to a processing apparatus for processing a peripheral portion of an object to be processed, such as a semiconductor wafer.

Conventionally, it opposes the holding | maintenance part which hold | maintains a board | substrate (process object), the 1st board | substrate cleaning brush of the sponge form which wash | cleans the surface (one surface) of the peripheral part of the said board | substrate, and the said 1st board | substrate cleaning brush. A process comprising a second substrate cleaning brush in the form of a sponge disposed on and cleaning the rear surface (the other surface) of the periphery of the substrate, and a brush access separation mechanism for accessing and separating the first substrate cleaning brush and the second substrate cleaning brush from each other; An apparatus is known (see Japanese Patent Laid-Open No. 2007-157936).

According to the conventional processing apparatus as described in JP 2007-157936 A, the pressure applied to the surface of the peripheral portion of the workpiece from the first cleaning portion can be cleaned, although it is possible to clean the front and rear surfaces of the workpiece. I) It was not possible to control the pressure and the pressure applied to the back surface of the peripheral part of the workpiece from the second cleaning part. For this reason, the conventional processing apparatus has the problem as shown below.

Generally, polymers or particles tend to adhere to the back side of the workpiece, which are not easily removed. For this reason, when washing with a strong force in order to remove the polymer or particle adhered to the back surface of the to-be-processed object, the patterning performed on the surface of the to-be-processed object may peel. On the other hand, when cleaning with a weak force so that the pattern by the patterning applied to the surface is not peeled off, the polymer or particle adhered to the back surface cannot be removed.

In addition, since there are various kinds of particles, there are some that are not easily removed from the object depending on the kind of particles to be attached. In addition, the types of particles adhered to the surface of the object to be processed and the types of particles adhered to the back surface may be different. Particles which are not easily removed on one surface (for example, the surface) are attached and the other surface (for example, For example, when particles easily removed are attached to the back surface, they cannot be cleaned by pressing pressure according to the respective surfaces.

Moreover, as another problem, since the conventional processing apparatus as described in Unexamined-Japanese-Patent No. 2007-157936 is comprised so that a 1st board | substrate cleaning brush and a 2nd board | substrate cleaning brush may approach and space each other, 2nd board | substrate cleaning It is necessary to position the brush on the back side (down side) of the object to be processed, and then move it horizontally toward the periphery of the object, and then sandwich the object by the first substrate cleaning brush and the second substrate cleaning brush. have. For this reason, it takes time to position a 2nd board | substrate cleaning brush on the back surface of a to-be-processed object.

Moreover, when the cup surrounding the to-be-processed object hold | maintained by the holding | maintenance part is provided, it is necessary to provide the clearance gap which passes a 2nd board | substrate cleaning brush between the to-be-processed object hold | maintained by the holding | maintenance part, and a cup. . For this reason, the size of the cup surrounding the circumference | surroundings of the wafer held by the holding | maintenance part becomes large.

The present invention provides a processing apparatus capable of reliably removing a polymer or particles attached to a back surface without removing a pattern by patterning applied to a surface, or reliably removing particles attached to each surface by a pressing force according to each surface. The second cleaning mechanism can be easily and quickly brought into contact with the back surface of the peripheral part of the object to be processed, and the size of the cup can be reduced when a cup is provided that surrounds the object to be held by the holding part. Provide a processing device.

A processing apparatus according to the first aspect of the present invention includes a holding part for holding a target object, a rotation driving unit for rotating the target object held by the holding part, and one surface of a peripheral portion of the target object, A first cleaning mechanism for cleaning, a second cleaning mechanism for contacting and cleaning the other surface of the peripheral portion of the workpiece, and a pressure adjusting force applied to one surface of the peripheral portion from the first cleaning mechanism. A 1st adjustment mechanism and the 2nd adjustment mechanism which adjusts the pressing force applied to the other surface of the said peripheral part from the said 2nd washing | cleaning mechanism are provided.

According to a second aspect of the present invention, there is provided a processing apparatus comprising: a holding unit for holding a target object, a rotation drive unit for rotating the target object held by the holding unit, and one surface of a peripheral portion of the target object A first cleaning mechanism to clean, and a second cleaning mechanism connected to the first cleaning mechanism, for cleaning in contact with the other surface of the peripheral portion of the object to be cleaned, wherein the second cleaning mechanism is oscillated about the oscillation axis. It is possible to contact with the said other surface of the said peripheral part when it rocked to the said 1st washing | cleaning mechanism side.

According to the 1st aspect of this invention, the pressurization pressure applied to the one surface of the peripheral part of a to-be-processed object can be adjusted from a 1st washing | cleaning mechanism by a 1st adjustment mechanism, and it is a feature from a 2nd cleaning mechanism by a 2nd adjustment mechanism. The pressure applied to the other surface of the peripheral portion of the lid can be adjusted. For this reason, the polymer or particle adhered to the back surface can be removed reliably, or the particle adhered to each surface can be reliably removed by the pressing force according to each surface, without peeling the pattern by the patterning applied to the surface.

Moreover, according to the 2nd aspect of this invention, when a 2nd washing | cleaning mechanism can be rocked about a rocking shaft, and it rocked to the 1st washing | cleaning mechanism side, it contacts with the other surface of the peripheral part, and wash | cleans the other surface of the said peripheral part. For this reason, a 2nd washing | cleaning mechanism can be made to contact easily the back surface of the peripheral part of a to-be-processed object easily and quickly. Moreover, when the cup which surrounds the to-be-processed object hold | maintained by the holding | maintenance part is provided, the size of the said cup can also be reduced.

1 is a side cross-sectional view showing the configuration of a processing apparatus according to a first embodiment of the present invention.
2 is a side cross-sectional view showing the configuration of the first adjusting mechanism and the second adjusting mechanism of the processing apparatus according to the first embodiment of the present invention.
3A and 3B are top and side cross-sectional views showing the configuration of the first cleaning unit and the second cleaning unit of the processing apparatus according to the first embodiment of the present invention.
4A to 4C are schematic diagrams showing moving aspects of the first cleaning mechanism and the second cleaning mechanism of the processing apparatus according to the first embodiment of the present invention.
5 is a side cross-sectional view showing the configuration of the first cleaning unit and the second cleaning unit of the processing apparatus according to the modification of the first embodiment of the present invention.
6 is a side cross-sectional view showing the configuration of a processing apparatus according to a second embodiment of the present invention.
7 is a side cross-sectional view showing the configuration of a first adjustment mechanism of the processing apparatus according to the second embodiment of the present invention.
8A to 8D are schematic views showing moving aspects of the first cleaning mechanism and the second cleaning mechanism of the processing apparatus according to the second embodiment of the present invention.

First embodiment

EMBODIMENT OF THE INVENTION Hereinafter, the 1st Example of the processing apparatus which concerns on this invention is described with reference to drawings. 1 to 5 are diagrams showing a first embodiment of the present invention.

As shown in FIG. 1, the processing apparatus includes a holding unit 1 for holding a semiconductor wafer W (hereinafter, simply referred to as a wafer W) as an object to be processed by vacuum adsorption, and a holding unit ( The rotating shaft 5 extending downward from the center of 1), the rotation drive part 60 which rotates the wafer W hold | maintained by the holding part 1 by rotating the said rotating shaft 5, and the holding part 1 A cup 70 surrounding the periphery of the wafer W held by the wafer W, a surface cleaning mechanism (first cleaning mechanism) 30 that contacts and cleans the surface (one surface) of the peripheral portion of the wafer W; And a back surface cleaning mechanism (second cleaning mechanism) 40 which is connected to the surface cleaning mechanism 30 and contacts and cleans the back surface (the other surface) of the peripheral portion of the wafer W.

In addition, as shown in FIG. 2, the surface cleaning mechanism 30 is provided on the lower end of the first proximal end 31 and the first proximal end 31, and has a sponge-like surface which is in contact with the surface of the peripheral portion of the wafer W. It has a washing part (first washing part) 32. As shown in FIGS. 3A and 3B, the surface cleaning portion 32 is composed of a hard portion 32a having a hard center portion in the cross section, and an outer circumference portion surrounding the periphery of the center portion is softer than the hard portion 32 a. It consists of the soft part 32b.

In addition, as shown in FIG. 2, the back surface cleaning mechanism 40 is provided on the upper end of the second base end 41 and the second base end 41, and has a sponge-like back side which is in contact with the back side of the peripheral edge of the wafer W. As shown in FIG. It has a washing | cleaning part (2nd washing | cleaning part) 42. As shown in Figs. 3A and 3B, the back cleaning part 42 is composed of a hard part 42a having a hard central part in the cross section, and an outer circumferential part surrounding the periphery of the center part is softer than the hard part 42a. It consists of the soft part 42b.

In addition, in this embodiment, with respect to both the surface washing | cleaning part 32 and the back washing part 42, the center part of the cross section consists of hard part 32a, 42a, and the outer peripheral part which surrounds the periphery of a center part is hard. It demonstrates using the aspect which consists of soft part 32b, 42b softer than the part 32a, 42a. However, the present invention is not limited to this, and only one of the surface cleaning part 32 and the back cleaning part 42 is composed of hard parts 32a and 42a having a hard central portion in the cross section, and an outer peripheral part surrounding the central part is hard. It may be made of soft parts 32b and 42b that are softer than the parts 32a and 42a.

2, the housing 24 in which the electromagnet 21 is arrange | positioned inside is connected to the upper end of the surface cleaning mechanism 30. As shown in FIG. In addition, a surface side adjustment mechanism (first adjustment mechanism) 10 is connected to the upper end of the housing 24 to adjust the pressure applied to the surface of the peripheral portion of the wafer W from the surface cleaning mechanism 30. .

As shown in FIG. 2, the surface-side adjustment mechanism 10 has a cylindrical cylinder 12 and a piston 15 that is movable up and down in the cylinder 12. In addition, the cylinder 12 is provided with an upper inlet 11 for introducing air to the upper side of the piston 15 and a lower inlet 16 for introducing air to the lower side of the piston 15. have. In addition, each of the upper side inflow part 11 and the lower side inflow part 16 is connected to the air supply part (not shown).

2, the to-be-measured part 19 extended in the horizontal direction is connected to the upper end of the piston 15. As shown in FIG. The lower end of the measurement unit 19 is in contact with a measurement sensor 51 for measuring the pressure applied from the measurement unit 19. Moreover, the output part 52 which outputs the pressure pressure detected by the measurement sensor 51 is connected to the said measurement sensor 51.

Here, the air pressure imparted to the piston 15 by the air flowing in from the upper inlet 11 and the air pressure imparted to the piston 15 by the air flowing in from the lower inlet 16 are adjusted, The pressure applied to the surface of the peripheral portion of the wafer W from the surface cleaning portion 32 is adjusted.

2, the permanent magnet 25 is connected to the lower end of the back surface washing | cleaning mechanism 40. As shown in FIG. Moreover, the back side adjustment mechanism (2nd adjustment mechanism) is comprised by the permanent magnet 25 provided in the back surface cleaning mechanism 40, and the electromagnet 21 which applies a magnetic force to the said permanent magnet 25. As shown in FIG. Further, by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21), the pressure applied to the back surface of the peripheral edge of the wafer W from the back surface cleaning section 42 is adjusted. .

By the way, in this embodiment, the back side adjustment mechanism (electromagnet 21 and the permanent magnet 25) is applied to the surface of the peripheral part of the wafer W from the surface cleaning mechanism 30 by the surface side adjustment mechanism 10. A pressing pressure larger than the pressing pressure may be applied to the back surface of the peripheral portion of the wafer W from the back surface cleaning mechanism 40, and conversely, the surface side adjustment mechanism 10 may be applied to the back surface of the wafer W from the surface cleaning mechanism 30. The pressure smaller than the pressure applied to the surface of the peripheral portion may be applied to the rear surface of the peripheral portion of the wafer W from the back surface cleaning mechanism 40.

As shown in FIG. 2, the housing 24 is provided with a connecting member 45 that can swing around the swing shaft 45a. The back surface cleaning mechanism 40 is connected to the surface cleaning mechanism 30 via the connecting member 45 and the housing 24. Then, the back surface cleaning mechanism 40 is capable of oscillating around the swing shaft 45a, and when the surface cleaning mechanism 30 is rocked to the surface cleaning mechanism 30 side (upper side) (when in the closed position), the peripheral portion of the wafer W is provided. It is made to contact a back surface (refer FIG. 4C).

In addition, as shown in FIG. 1, the surface cleaning mechanism 30 is integrally formed with the surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 through the housing 24 and the surface side adjustment mechanism 10. The washing | cleaning part movement mechanism 55 which moves to the direction from the surface of the wafer W toward the back surface is connected.

In addition, as shown in FIG. 1, the rotation drive unit 60 includes a pulley 62 disposed outside the periphery of the rotation shaft 5, a drive belt 63 wound around the pulley 62, and the drive belt. It has the motor 61 which rotates the rotating shaft 5 via the pulley 62 by giving drive force to 63. As shown to FIG. In addition, a bearing 66 is disposed outside the periphery of the rotary shaft 5. Moreover, the holding part moving mechanism 65 which moves the holding part 1 to an up-down direction by moving the said rotating shaft 5 to an up-down direction is connected to the rotating shaft 5.

1, the processing apparatus is provided with the processing liquid supply part 75 which supplies the processing liquid to the wafer W. As shown in FIG. On the surface side of the wafer W, a surface side supply nozzle 71 is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the surface of the wafer W. have. In addition, a back side supply nozzle 72 is provided on the back side of the wafer W to supply the process liquid supplied from the process liquid supply unit 75 to the back side of the wafer W. have.

In addition, in this application, a process liquid means a chemical liquid or pure water. And as a chemical liquid, hexafluoric acid etc. can be used, for example.

Next, the effect | action of this embodiment which consists of such a structure is demonstrated.

First, the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding part 1 positioned at the transfer position (upper position) by the holding part moving mechanism 65. (Holding process).

Next, the holding part 1 is moved downward by the holding part moving mechanism 65, and is located in the downward position (refer FIG. 1).

Subsequently, the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrally moved by the cleaning part moving mechanism 55 (see FIGS. 1 and 4A). At this time, the back surface cleaning part 42 of the back surface cleaning mechanism 40 is rocked to the opposite side (down side) from the surface cleaning mechanism 30 side, and is located in an open position (refer FIG. 4A).

As described above, according to the present embodiment, the rear surface cleaning portion 42 of the rear surface cleaning mechanism 40 is moved to the rear side of the wafer W while the rear surface cleaning portion 42 of the rear surface cleaning mechanism 40 is positioned at the open position. May be located (see FIGS. 4A and 4B). For this reason, the size of the cup 70 surrounding the periphery of the wafer W can be reduced, and the back surface cleaning section 42 can be easily and quickly brought into contact with the back surface of the peripheral edge of the wafer W.

That is, as in Japanese Patent Laid-Open No. 2007-157936, as long as the first substrate cleaning brush (surface cleaning portion 32 ') and the second substrate cleaning brush (back surface cleaning portion 42') are approached and separated from each other, A first substrate cleaning brush (surface cleaning part 32 ') and a second substrate cleaning brush (rear cleaning part 42') are placed between the wafer W held by the holding part 1 and the cup 70. It is necessary to provide a gap enough to pass (see the dashed line indicated by 70 'in FIG. 1). For this reason, the size of the cup 70 surrounding the periphery of the wafer W held by the holding | maintenance part 1 becomes large.

In contrast, according to the present embodiment, the rear surface of the rear surface cleaning mechanism 40 is merely moved by moving the rear surface cleaning mechanism 40 downward while the rear surface cleaning portion 42 of the rear surface cleaning mechanism 40 is positioned at an open position. The cleaning part 42 can be moved to the back surface side of the wafer W (refer to the solid arrow in FIG. 1).

For this reason, it is not necessary to provide the clearance for letting the back surface washing part 42 pass between the wafer W hold | maintained by the holding | maintenance part 1, and the cup 70. FIG. As a result, the size of the cup 70 surrounding the wafer W can be reduced.

Moreover, if it is a conventional thing as described in Unexamined-Japanese-Patent No. 2007-157936, a 2nd board | substrate cleaning brush (back surface cleaning part 42 ') will be made when the back surface cleaning part 42 contacts the peripheral part of the back surface of the wafer W. After positioning)) on the back side of the wafer W, it is necessary to move it in the horizontal direction toward the periphery of the wafer W (see the dotted arrow in FIG. 1), according to this embodiment, the back surface cleaning mechanism. You may only move 40 downward (refer the solid arrow of FIG. 1). For this reason, the number of processes until the back surface cleaning part 42 contacts the peripheral part of the back surface of the wafer W can be reduced (the horizontal movement process can be omitted), and the back surface cleaning part 42 Can be easily and quickly brought into contact with the rear surface of the periphery of the wafer (W).

Subsequently, the rotation shaft 5 is driven to rotate by the rotation driving unit 60, so that the wafer W held by the holding unit 1 is rotated (rotational step) (see FIG. 1). At this time, the driving force is applied to the pulley 62 from the motor 61 via the driving belt 63, and the rotation shaft 5 is driven to rotate.

Subsequently, the processing liquid supplied from the processing liquid supply part 75 by the surface side supply nozzle 71 starts to be supplied to the surface of the wafer W. As shown in FIG. In addition, the process liquid supplied from the process liquid supply part 75 by the back surface supply nozzle 72 starts to be supplied to the back surface of the wafer W (process liquid supply process) (refer FIG. 1). In addition, the following process is performed while the process liquid is being supplied to the peripheral part of the wafer W from the surface side supply nozzle 71 and the back surface side supply nozzle 72 in this way.

Thus, when the processing liquid is supplied from the surface side supply nozzle 71 and the back side supply nozzle 72, the surface cleaning part 32 of the surface cleaning mechanism 30 comes into contact with the surface of the wafer W ( 4b). Thereafter, a current flows through the electromagnet 21 in the housing 24 (see the arrow in FIG. 4C), and a magnetic force applied from the electromagnet 21 acts on the permanent magnet 25 provided at the lower end of the cleaning mechanism 40. do. As a result, the back surface cleaning part 42 of the back surface cleaning mechanism 40 is rocked about the swing shaft 45a, and is located in a closed position, and the back surface cleaning part 42 is in contact with the back surface of the wafer W ( See FIG. 4C).

At this time, by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21), the pressure applied to the back surface of the peripheral edge of the wafer W from the back surface cleaning section 42 is adjusted. Can be.

The surface of the peripheral portion of the wafer W from the surface cleaning part 32 is adjusted by adjusting the air pressure due to the air flowing in from the upper inlet 11 and the air pressure due to the air flowing in from the lower inlet 16. The pressure applied to the pressure can be adjusted (see FIG. 2). The pressure is also detected by the measurement sensor 51 and output by the output unit 52.

As described above, according to the present embodiment, the pressure applied to the surface of the peripheral portion of the wafer W from the surface cleaning mechanism 30 can be adjusted, and the peripheral portion of the wafer W from the back surface cleaning mechanism 40 can be adjusted. The pressure applied to the rear surface can be adjusted. For this reason, the surface of the wafer W can be cleaned with a weak force and the backside of the wafer W can be cleaned with a strong force. On the contrary, the backside of the wafer W can be cleaned with a weak force and the surface of the wafer W can be cleaned. It can also be cleaned with a strong force.

When a polymer or particles are not easily attached to the back surface of the wafer W, the surface of the wafer W is cleaned with a weak force, and the back surface of the wafer W is cleaned with a strong force, whereby the wafer W is cleaned. The polymer or particles adhered to the back surface of the wafer W can be reliably removed without peeling off the pattern by patterning applied to the surface of the wafer.

As a result, according to this embodiment, the effect as illustrated below can be obtained.

First, when the wafer W is transported, the particles remaining at the periphery are no longer caught between the arm of the transfer robot (not shown) and the wafer W, so that the surface or the surface of the wafer W is caused by the particles. The back surface can be prevented from peeling off.

In addition, after returning the wafer W into a carrier (not shown), particles adhering to the periphery of the wafer W in the carrier no longer fall, thereby preventing contamination of other wafers W in the carrier. can do.

In addition, since the particles do not float in the water collected on the wafer W when the wafer W is exposed and processed, the refractive index of the water can be maintained uniformly so that the wafer W can be accurately exposed and processed. have.

On the other hand, the surface cleaning part 32 and the back cleaning part 42 consist of hard part 32a, 42a of which the center part of a cross-section is hard, and the outer periphery surrounding the said center part is softer than the hard part 32a, 42a. It consists of soft parts 32b and 42b (refer FIG. 3A and FIG. 3B). For this reason, as shown in FIG. 3B, the side end surface (APEX part) of the periphery part of the wafer W is made to contact hard part 32a, 42a, and the soft part 32b, 42b of the wafer W is carried out. The surface and the back surface (bevel portion) of the peripheral portion can be sandwiched.

As a result, the side end surface (APEX part) of the peripheral part of the wafer W which is not patterned can be cleaned with a stronger force (rather than the front surface and the back surface (bevel part) of the peripheral part of the wafer W).

In this embodiment, the processing liquid supplied from the front side supply nozzle 71 to the surface of the wafer W and the processing liquid supplied from the back side supply nozzle 72 to the back surface of the wafer W can be changed as appropriate. (See Figure 1). For example, the chemical liquid can be supplied from the front side supply nozzle 71 and the back side supply nozzle 72 first, followed by the rinse liquid, and finally the drying solution. In addition, the type of processing liquid supplied from the front-side supply nozzle 71 to the surface of the wafer W and the type of processing liquid supplied from the back-side supply nozzle 72 to the back surface of the wafer W are independently changed. It may be.

When the predetermined processing of the peripheral portion of the wafer W by the processing liquid as described above is completed, the supply of the processing liquid from the front side supply nozzle 71 and the back side supply nozzle 72 is stopped. At this time, the current flowing in the electromagnet 21 in the housing 24 is stopped (or a current flows in the reverse direction to the electromagnet 21 in the housing 24), and the back surface cleaning section 42 moves the swing shaft 45a. It is swung downward toward the center and is located in the open position. Thereafter, the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are united by the cleaning part moving mechanism 55 to move upward.

At this time, the back surface cleaning mechanism 40 can be moved from the back surface side of the wafer W to the surface side only by moving the back surface cleaning mechanism 40 upward (without moving outward in the circumferential direction of the wafer W). Therefore, the back surface washing part 42 can be moved easily and quickly.

Subsequently, the wafer W is rotated at high speed by the rotation driver 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding part 1 is also stopped.

Subsequently, the holding part 1 is moved upward by the holding part moving mechanism 65 and positioned at the delivery position (upper position).

Finally, the wafer W is removed from the holding part 1 by a transfer robot (not shown).

By the way, in the above, the housing | casing 24 which accommodates the electromagnet 21 is connected to the surface cleaning mechanism 30, and the back surface cleaning part 42 of the back surface cleaning mechanism 40 is the oscillation shaft to the surface cleaning mechanism 30. The explanation was made using the sun that is swingably connected with reference to 45a (see FIG. 2).

However, the present invention is not limited thereto, and as shown in FIG. 5, the housing 24 for receiving the electromagnet 21 is disposed below the permanent magnet 25 provided at the lower end of the second base end 41, and the second base end is provided. The guide part 44 which has the guide groove 44a which guides 41 and the back side washing part 42 to an up-down direction may be arrange | positioned, and the back side washing part 42 may be movable to an up-down direction. In this case, the surface cleaning mechanism 30 is directly connected to the surface side adjustment mechanism 10 (without the housing 24).

According to this aspect, too, the pressure applied to the surface of the peripheral portion of the wafer W from the surface cleaning mechanism 30 can be adjusted, and applied to the rear surface of the peripheral portion of the wafer W from the rear surface cleaning mechanism 40. The pressure can be adjusted. For this reason, the peripheral part of the wafer W can be cleaned reliably, and a particle can be removed reliably from the peripheral part of the wafer W. As shown in FIG.

Second Embodiment

Next, a second embodiment of the present invention will be described with reference to FIGS. 6 to 8D. 1 to 5, the housing 24 in which the electromagnet 21 is disposed inside the upper end of the surface cleaning mechanism 30 is connected, and is permanently attached to the lower end of the back cleaning mechanism 40. The magnet 25 was connected, and the back surface cleaning mechanism 40 was rocked to the surface cleaning mechanism 30 side (upper side) about the oscillation shaft 45a by flowing an electric current through the electromagnet 21. In contrast, in the second embodiment shown in FIGS. 6 to 8D, the pressing member 26 is placed below the back surface cleaning mechanism (second cleaning mechanism) 40, and the contact portion of the pressing member 26 ( 27, the second base end 41 of the back surface cleaning mechanism 40 contacts the back surface cleaning mechanism 40 with the surface cleaning mechanism (first cleaning mechanism) 30 on the swing shaft 145a (upper side). On the side).

As shown in FIG. 7, a connecting portion 46 is disposed at an upper end of the first base end 31, and the side surface of the connecting portion 46 extends upward and downward to extend the surface cleaning mechanism 30 and the backside cleaning mechanism 40. Connecting rods 145 are installed. Moreover, the back surface cleaning mechanism 40 can be rocked about the oscillation shaft 145a, and when it is rocked to the surface cleaning mechanism 30 side (upper side), it is to the back surface (other surface) of the peripheral part of the wafer W. Contact. In addition, the second base end 41 of the back surface cleaning mechanism 40 is connected to the connecting rod 145. Moreover, the surface side adjustment mechanism 10 is connected to the upper part of the surface washing | cleaning mechanism 30. As shown in FIG.

6 and 8A to 8D, the rear surface cleaning mechanism 40 is contacted with the rear surface cleaning mechanism 40 below the rear surface cleaning mechanism 40, and the rear surface cleaning mechanism 40 is centered on the swing shaft 145a. The pressing member 26 which swings to the surface cleaning mechanism 30 side (upper side) is mounted. In addition, the press member 26 is connected to the contact portion 27 and the contact portion 27 in contact with the second proximal end 41 of the back surface cleaning mechanism 40, as shown in FIGS. 8A to 8D. It has the elastic member 28 which gives an elastic force to the contact part 27. As shown in FIG.

The rest of the configuration is substantially the same as in the first embodiment shown in Figs. 6 to 8D, the same parts as those in the first embodiment shown in Figs. 1 to 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.

Hereinafter, the operation of the present embodiment will be described.

First, the wafer W taken out from a carrier (not shown) by a transfer robot (not shown) is held on the holding portion 1 positioned at the transfer position (upper position) by the holding portion moving mechanism 65. It is mounted (holding process).

Next, the holding part 1 is moved downward by the holding part moving mechanism 65, and is located in the downward position (refer FIG. 6).

Subsequently, the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are united by the cleaning part moving mechanism 55 and start to move downward (refer to FIG. 6 and FIG. 8A). At this time, the back surface cleaning part (second cleaning part) 42 of the back surface cleaning mechanism 40 is rocked to the opposite side (down side) from the surface cleaning mechanism 30 side, and is located in the open position (refer FIG. 8A). ).

As described above, when the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrally moved downward, the rotating shaft 5 is driven to rotate by the rotation driving unit 60 so as to be held by the holding unit 1. The wafer W is rotated (rotating step) (see FIG. 6).

Thereafter, the second base end 41 of the back surface cleaning mechanism 40 contacts the contact portion 27 of the pressing member 26 placed below the back surface cleaning mechanism 40 to contact the second base end 41. The back surface cleaning part 42 is rocked to the surface cleaning mechanism 30 side (upper side) centering on the oscillation shaft 145a (refer FIG. 8B and FIG. 8C). Here, the elastic force by the elastic member 28 is given to the contact part 27.

At this time, the process liquid supplied from the process liquid supply part 75 by the surface side supply nozzle 71 starts to be supplied to the surface (one surface) of the wafer W. As shown in FIG. In addition, similarly, the processing liquid supplied from the processing liquid supply unit 75 by the back side supply nozzle 72 starts to be supplied to the rear surface of the wafer W (processing liquid supplying step) (see FIG. 6). In addition, when the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are located completely below, the lower surface of the 2nd base end part 41 and the upper surface of the contact part 27 are mutually contacting without step | difficulties ( See FIG. 8D).

As described above, according to the present embodiment, the rear surface cleaning unit 42 of the rear surface cleaning mechanism 40 is positioned with the rear surface cleaning unit 42 of the rear surface cleaning mechanism 40 positioned in the open position. It can be located on the back side of the wafer W (see FIGS. 8B and 8C). For this reason, the size of the cup 70 surrounding the periphery of the wafer W can be reduced, and the back cleaning part 42 can be easily and quickly contacted with the back surface of the peripheral part of the wafer W. As shown in FIG.

When the predetermined processing of the peripheral portion of the wafer W by the processing liquid as described above is completed, the supply of the processing liquid from the front side supply nozzle 71 and the back side supply nozzle 72 is stopped. Subsequently, the surface cleaning mechanism 30 and the back surface cleaning mechanism 40 are integrally moved upward. Here, as the second base end portion 41 moves away from the contact portion 27 of the pressing member 26, the second base end portion 41 and the back side washing portion 42 are rocked downward with respect to the swing shaft 145a. Finally it is located in the open position.

For this reason, according to this embodiment, similarly to the first embodiment, the back surface cleaning part 42 is moved only by moving the back surface cleaning mechanism 40 upward (without moving outward in the circumferential direction of the wafer W). Since it can move to the surface side from the back surface side of (W), the back surface washing part 42 can be moved easily and quickly.

Subsequently, the wafer W is rotated at high speed by the rotation driver 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding part 1 is also stopped.

Subsequently, the holding part 1 is moved upward by the holding part moving mechanism 65 and positioned at the delivery position (upper position).

Finally, the wafer W is removed from the holding part 1 by a transfer robot (not shown).

Claims (14)

The holding part holding a to-be-processed object,
A rotation drive unit for rotating the object to be held held by the holding unit;
A first cleaning mechanism that contacts and cleans one surface of the peripheral portion of the target object;
A second cleaning mechanism that contacts and cleans the other surface of the peripheral portion of the target object;
A first adjusting mechanism for adjusting a pressing pressure applied to one surface of the peripheral portion from the first washing mechanism;
Second adjustment mechanism for adjusting the pressing pressure applied to the other surface of the peripheral portion from the second cleaning mechanism
Equipped with
The second cleaning mechanism has a second cleaning portion which is in contact with the other surface of the peripheral portion, the central portion of the cross section is made of a hard portion, and the outer peripheral portion surrounding the periphery of the central portion is made of a soft portion that is softer than the hard portion. ,
The said hard part contacts the side end surface of the said peripheral part, and the said soft part contacts the other surface of the said peripheral part at the time of wash | cleaning the said to-be-processed object.
The method of claim 1,
The second adjusting mechanism includes a permanent magnet provided in the second cleaning mechanism and an electromagnet for adjusting the pressing pressure applied to the other surface of the peripheral portion by applying a magnetic force to the permanent magnet.
The method of claim 1,
The said 1st washing | cleaning mechanism has a 1st washing part which can contact one surface of the said periphery part, the center part of a cross section consists of a hard part, and the outer peripheral part surrounding the periphery of the said center part consists of a soft part which is softer than the said hard part. Processing unit.
delete The method of claim 1,
And a moving mechanism connected to the first cleaning mechanism and moving the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the object to the other surface.
The method of claim 1,
The said 2nd washing | cleaning mechanism is connected to the said 1st washing | cleaning mechanism, and can be rocked about a rocking shaft, and it is a processing apparatus which contacts the said other surface of the said peripheral part when it rocked to the said 1st washing | cleaning mechanism side.
The method according to claim 6,
The said 2nd washing | cleaning mechanism is a processing apparatus which oscillates to the said 1st washing | cleaning mechanism side centering around the said oscillation shaft, after the said 1st washing | cleaning mechanism contacts the said one surface of the said peripheral part, and contacts the said other surface of the said peripheral part.
The method of claim 1,
The second adjusting mechanism is a process of applying a pressing pressure greater than a pressing pressure applied to one surface of the peripheral portion from the first cleaning mechanism by the first adjusting mechanism to the other surface of the peripheral portion from the second cleaning mechanism. Device.
delete delete delete delete delete delete
KR1020107008859A 2008-06-16 2009-06-02 Processing device KR101175696B1 (en)

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JPJP-P-2008-156919 2008-06-16
JPJP-P-2008-156902 2008-06-16
JP2008156919A JP4932792B2 (en) 2008-06-16 2008-06-16 Processing equipment
JP2008156902A JP5026351B2 (en) 2008-06-16 2008-06-16 Processing equipment

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CN104465448B (en) * 2013-09-18 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of piece box lifting device, Transmission system and semiconductor processing equipment
JP2021181148A (en) * 2020-05-20 2021-11-25 東京エレクトロン株式会社 Substrate treatment apparatus, polishing head, and substrate treatment method
CN116525507B (en) * 2023-07-05 2023-08-29 光微半导体(吉林)有限公司 Flip-chip brush belt cleaning device

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH11176790A (en) * 1997-12-12 1999-07-02 Tokyo Electron Ltd Cleaning system

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Publication number Priority date Publication date Assignee Title
US7777203B2 (en) * 2006-09-27 2010-08-17 Applied Materials, Inc. Substrate holding apparatus
JP2008098440A (en) * 2006-10-12 2008-04-24 Matsushita Electric Ind Co Ltd Washing device and washing method of semiconductor device

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH11176790A (en) * 1997-12-12 1999-07-02 Tokyo Electron Ltd Cleaning system

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