WO2009147822A1 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- WO2009147822A1 WO2009147822A1 PCT/JP2009/002436 JP2009002436W WO2009147822A1 WO 2009147822 A1 WO2009147822 A1 WO 2009147822A1 JP 2009002436 W JP2009002436 W JP 2009002436W WO 2009147822 A1 WO2009147822 A1 WO 2009147822A1
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- WIPO (PCT)
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
- light
- silver
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052709 silver Inorganic materials 0.000 claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 213
- 239000012790 adhesive layer Substances 0.000 claims description 39
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 5
- 238000004380 ashing Methods 0.000 description 15
- 230000009467 reduction Effects 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 206010040844 Skin exfoliation Diseases 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000005012 migration Effects 0.000 description 10
- 238000013508 migration Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Definitions
- the present invention relates to a light emitting element, and more particularly to a light emitting element having a reflective layer.
- a light-emitting element that has an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer sequentially stacked on a transparent substrate and extracts light emitted from the light-emitting layer from the substrate side is known.
- the reflective layer By forming the reflective layer on the p-type semiconductor layer, the light emitted toward the p-type semiconductor layer can be reflected toward the substrate, and the light extraction efficiency can be improved.
- the inventors of the present application have found that light absorption by the platinum layer is not sufficiently suppressed in the conventional light emitting device.
- the thickness of the platinum layer is required to be 0.5 nm or more from the viewpoint of improving the adhesion between the reflective layer and the p-type semiconductor layer and reducing the contact resistance.
- light absorption in the platinum layer is suppressed in the range of 0.5 nm to 5 nm.
- the present inventors have found that large light absorption occurs even in the platinum layer having a film thickness in this range.
- the film thickness of the platinum layer required in order to improve the adhesiveness of a reflection layer was not restricted to this range.
- the present invention is based on the knowledge found by the inventors of the present invention, and an object thereof is to realize a light-emitting element in which light absorption in an adhesive layer is greatly improved without lowering the adhesion of the reflective layer.
- a light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a reflective layer formed on the p-type semiconductor layer, a p-type semiconductor layer, which are sequentially stacked on a substrate. And an adhesive layer made of platinum formed between the reflective layer. The thickness of the adhesive layer is 0.5 atomic layer or more and 1.5 atomic layer or less.
- the light emitting device it is possible to realize a light emitting device in which light absorption in the adhesive layer is greatly improved without reducing the adhesion of the reflective layer.
- FIG. 6 is a cross-sectional view illustrating an exemplary semiconductor device manufacturing method in the order of steps.
- FIG. 6 is a cross-sectional view illustrating an exemplary semiconductor device manufacturing method in the order of steps.
- the illustrated light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a p-side electrode formed on the p-type semiconductor layer, which are sequentially stacked on a substrate.
- the p-side electrode is formed in contact with the p-type semiconductor layer, and is formed in contact with the adhesive layer made of platinum (Pt) having a film thickness of 0.5 atomic layer or more and 1.5 atomic layer or less, and silver.
- a reflective layer made of a material containing (Ag).
- the thickness of the adhesive layer is thinner than 0.5 atomic layer, the function as the adhesive layer is lowered, the reflective layer is easily peeled off, and the occurrence rate of peeling is greatly increased. For this reason, the film thickness of the adhesive layer needs to be increased to some extent.
- the output ratio is greatly reduced.
- the output ratio is reduced to a level of about 90%, the output level becomes the same as that when a material such as aluminum that hardly peels off is used as a reflective layer, and the advantage of using silver cannot be obtained. Therefore, the thickness of the adhesive layer made of platinum is preferably 0.5 atomic layers or more that can prevent the occurrence of peeling and 1.5 atomic layers or less that can secure an output ratio of 95% or more.
- the reflective layer may be silver or an alloy containing silver. Although silver is preferable from the viewpoint of reflectivity, an effect of suppressing migration can be obtained by using an alloy containing silver.
- the reflective layer may be a laminate of a plurality of layers including a layer made of silver or an alloy containing silver.
- a layer made of silver or an alloy containing silver When the layer made of silver is exposed on the surface in the film formation stage, the surface of the layer made of silver may be discolored by subsequent oxygen ashing, which may reduce the reflectance or increase the resistance value. is there.
- the layer made of silver By providing at least one protective layer on the layer made of silver, the layer made of silver can be protected, and an effect of suppressing a decrease in reflectance and an increase in resistance value can be obtained.
- FIG. 3 shows a cross-sectional configuration of a light emitting device according to an embodiment.
- the light emitting device of this embodiment includes an n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15 that are sequentially formed on a substrate 11 via a buffer layer 12. ing.
- the substrate 11 has optical transparency, and a sapphire substrate, a SiC substrate, a GaN substrate, or the like can be used.
- the n-type semiconductor layer 13 is made of a nitride semiconductor containing at least Ga and N, and contains an n-type impurity such as Si or Ge.
- the film thickness of the n-type semiconductor layer 13 may be 2 ⁇ m, for example.
- the n-type semiconductor layer 13 may be a stacked body in which a plurality of semiconductor layers are stacked.
- the light emitting layer 14 includes at least Ga and N, and includes In as necessary.
- a predetermined emission wavelength can be obtained by adjusting the amount of In.
- the multi-quantum well structure has an advantage that the luminance can be further improved.
- Another nitride semiconductor layer may be formed between the light emitting layer 14 and the n-type semiconductor layer 13.
- the p-type semiconductor layer 15 includes at least Ga and N, and includes a p-type impurity such as Mg.
- the film thickness of the p-type semiconductor layer 15 may be 0.1 ⁇ m, for example.
- Another nitride semiconductor layer may be formed between the light emitting layer 14 and the p-type semiconductor layer 15.
- the p-type semiconductor layer 15 may be a stacked body in which a plurality of semiconductor layers are stacked.
- a p-side electrode 16 is formed on the p-type semiconductor layer 15.
- the p-side electrode 16 has a stacked structure in which a plurality of metal layers are stacked.
- An adhesive layer 61, a reflective layer 62, an ashing damage reduction layer 63, a migration reduction layer 64, and a bonding pad 65 made of gold are sequentially formed from the p-type semiconductor layer 15 side.
- the adhesive layer 61 is made of platinum having a film thickness of 0.5 atomic layer to 1.5 atomic layer, and improves the adhesion between the p-type semiconductor layer 15 and the reflective layer 62.
- the reflective layer 62 is made of silver having a film thickness of 5 nm to 2000 nm and reflects light transmitted through the adhesive layer toward the substrate 11 side.
- the reflective layer 62 may be a single element of silver or an alloy containing silver.
- stacked may be sufficient.
- the ashing damage reducing layer 63 is made of chromium (Cr), and is formed to prevent damage to the reflective layer 62 made of silver during oxygen ashing.
- the ashing damage reduction layer preferably has a thickness of 30 nm or more in order to form a uniform film on the reflective layer 62.
- the migration reduction layer 64 is made of titanium (Ti), and is formed in order to suppress the growth of migration of the reflective layer 62 made of silver and prevent the occurrence of light emission defects.
- the migration reduction layer 64 is formed so as to cover the adhesive layer 61, the reflective layer 62, and the side surfaces of the ashing damage reduction layer 63.
- the bonding pad 65 is made of gold (Au) and preferably has a film thickness of 800 ⁇ m or more.
- the p-side electrode 16 is preferably provided on the entire surface of the p-type semiconductor layer 15 or in a region of 80% or more of the exposed area of the p-type semiconductor layer 15.
- the adhesive layer 61, the ashing damage reduction layer 63, the migration reduction layer 64, and the bonding pad 65 may contain other components as long as the exemplified elements are the main components.
- a material in which other elements are mixed in a range that does not affect the characteristics of platinum may be used.
- the ashing damage reduction layer 63, the migration reduction layer 64, and the bonding pad 65 may be made of other materials as long as equivalent functions can be obtained.
- the n-side electrode 17 includes a titanium layer 71 and a gold layer 72 that are sequentially formed on the n-type semiconductor layer 13.
- a buffer layer 12, an n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15 are sequentially stacked on a substrate 11.
- the p-type semiconductor layer 15, the light emitting layer 14, and a part of the n-type semiconductor layer 13 are dry-etched to form an exposed portion of the n-type semiconductor layer 13.
- a resist film 21 having an opening exposing the upper surface of the p-type semiconductor layer 15 is formed.
- the exposed portion of the p-type semiconductor layer 15 is washed with a hydrofluoric acid aqueous solution to remove carbon and the like.
- an adhesive layer 61 made of platinum and a reflective layer 62 made of silver are formed on the exposed portion of the p-type semiconductor layer 15.
- the resist film 21 is removed by organic cleaning.
- the adhesive sheet 22 is attached so as to cover the entire surface of the substrate 11, and then the adhesive sheet 22 is peeled off from one end to be completely removed by organic cleaning. Residues such as resist film pieces and electrode pieces that were not present are removed. Thereafter, although illustration is omitted, the remaining portion of the p-side electrode 16 and the n-side electrode 17 are formed, and singulation or the like is performed as necessary.
- FIG. 1 shows the relationship between the film thickness of the adhesive layer 61 and the occurrence rate of peeling.
- the occurrence rate of peeling was 100%, but the occurrence of peeling can be suppressed by forming the adhesive layer 61.
- the film thickness of the adhesive layer 61 was 0.1 nm, the occurrence of peeling was recognized to some extent. For this reason, in order to prevent peeling of the reflective layer 62, it is desirable that the thickness of the adhesive layer be 0.13 nm or more. This corresponds to a 0.5 atomic layer of platinum.
- FIG. 2 shows the relationship between the film thickness of the adhesive layer 61 and the light output.
- the output ratio is shown with the light output as 100% when the film thickness of the adhesive layer 61 is 0.1 nm.
- the output ratio decreases to about 75%.
- the film thickness of the adhesive layer 61 with an output ratio of 95% is about 0.4 nm. This corresponds to a 1.5 atomic layer of platinum.
- the thickness of the adhesive layer 61 is 0.13 nm or more and 0.4 nm or less, that is, 0.5 atomic layer or more and It is preferable to be 1.5 atomic layers or less.
- the reflective layer 62 is preferably made of silver from the viewpoint of reflectivity, but may be an alloy containing silver.
- an alloy containing silver and bismuth (Bi), neodymium (Nd), copper (Cu), palladium (Pd), or the like is used, the effect of suppressing migration can be increased.
- the thickness of the reflective layer 62 is less than about 5 nm, it is difficult to obtain sufficient reflection characteristics. Further, even if it is thicker than 2000 nm, there is no change in the reflection characteristics, a large amount of evaporation raw material is required for forming the film, and the time required for the process for depositing the Ag layer is increased. Cost increases. Therefore, the thickness of the reflective layer 62 is preferably 5 nm to 2000 nm.
- a GaN substrate 1 having a mirror-finished surface is placed on a substrate holder in a reaction tube, and then the substrate 1 is heated to 1050 ° C. and heated for 5 minutes while flowing nitrogen, hydrogen, and ammonia. As a result, dirt and moisture such as organic substances adhering to the surface of the substrate 1 were removed.
- n-type semiconductor layer 13 made of Si-doped GaN and having a thickness of 2 ⁇ m.
- the supply of TMG and SiH 4 was stopped, and the temperature of the substrate 11 was lowered to 750 ° C.
- the temperature of the substrate 11 was lowered to 750 ° C.
- nitrogen as a carrier gas ammonia, TMG, and trimethylindium (TMI) were supplied to grow the light emitting layer 14 having a single quantum well structure made of undoped InGaN with a thickness of 2 nm.
- the supply of TMI is stopped, and an intermediate layer (not shown) made of undoped GaN having a thickness of 4 nm is grown while raising the temperature of the substrate 11 toward 1050 ° C. It was. After the substrate temperature reached 1050 ° C., the p-type semiconductor layer 15 was grown.
- the p-type semiconductor layer 15 was a p-type cladding layer having a thickness of 0.05 ⁇ m and a p-type contact layer having a thickness of 0.05 ⁇ m.
- ammonia, TMG, trimethylaluminum (TMA), and cyclopentadienylmagnesium (Cp 2 Mg) are supplied while flowing nitrogen and hydrogen as carrier gases, and the film is made of AlGaN having a thickness of 0.05 ⁇ m.
- a p-type cladding layer was grown.
- ammonia, TMG, TMA, and Cp 2 Mg are supplied while flowing nitrogen gas and hydrogen gas as carrier gases while keeping the temperature of the substrate 11 at 1050 ° C., and the film thickness is changed from 0.05 ⁇ m to AlGaN.
- a p-type contact layer was grown.
- the supply of TMG, TMA, and Cp 2 Mg is stopped, the temperature of the substrate 11 is cooled to about room temperature while flowing nitrogen gas and ammonia, and then the substrate 11 on which the nitride semiconductor is laminated is taken out from the reaction tube. It was.
- Patterns for thus formed with a nitride semiconductor laminated structure without performing an additional annealing after depositing a SiO 2 film by a CVD method on the surface, a substantially rectangular shape by photolithography and wet etching An SiO 2 mask for etching was formed by etching. Thereafter, the p-type semiconductor layer 15, the intermediate layer, the light-emitting layer 14, and a part of the n-type semiconductor layer 13 are removed to a depth of about 0.4 ⁇ m by a reactive ion etching method. An exposed portion was formed.
- a photoresist is applied on the surface of the laminated structure, and the photoresist applied on the surface of the p-type semiconductor layer 15 is selectively removed by photolithography. About 80% or more of the surface of the p-type semiconductor layer 15 was exposed.
- the substrate 11 on which the laminated structure is formed is mounted in a chamber of a vacuum deposition apparatus, the inside of the chamber is evacuated to 2 ⁇ 10 ⁇ 6 Torr or less, and then the p-type semiconductor layer 15 is used by using an electron beam deposition method.
- An adhesion layer 61 made of platinum having a thickness of 0.2 nm was vapor-deposited on the surface and the photoresist.
- a reflective layer 62 made of silver having a thickness of 100 nm was vapor-deposited, and an ashing damage reducing layer 63 made of Cr having a thickness of 30 nm was vapor-deposited.
- the substrate 11 having the laminated structure was taken out of the chamber, and the adhesive layer 61, the reflective layer 62, and the ashing damage reducing layer 63 on the photoresist were cleaned and removed together with the photoresist.
- a part of the p-side electrode 16 in which the adhesive layer 61, the reflective layer 62, and the ashing damage reducing layer 63 were sequentially laminated on the p-type semiconductor layer 15 was formed.
- the adhesive sheet was peeled off from one end portion to remove the residue of the photoresist that could not be removed by washing. . Since the adhesive layer 61 is formed between the p-type semiconductor layer 15 and the reflective layer 62, the reflective layer 62 does not peel off even when the residue is removed using the adhesive sheet, and the p-side electrode 6 It was possible to laminate the reflective layer portion.
- a photoresist is applied on the surface of the laminated structure, and a part of the exposed portion of the n-type semiconductor layer 13, a part of the p-type semiconductor layer 15, and the upper surface of the ashing damage reducing layer 63 are bonded by photolithography.
- the substrate 11 on which the laminated structure was formed was mounted in a chamber of a vacuum deposition apparatus, and the inside of the chamber was evacuated to 2 ⁇ 10 ⁇ 6 Torr or less. Thereafter, a titanium film having a thickness of 150 nm was deposited by an electron beam deposition method, and a gold film having a thickness of 1.5 ⁇ m was further deposited.
- the substrate 11 on which the laminated structure is formed is taken out of the chamber, and the Ti layer and the Au layer on the photoresist are removed together with the photoresist, whereby the titanium layer 71 and the gold layer 72 of the n-side electrode 17 are formed.
- the remaining migration reduction layer 64 and the bonding pad 65 of the p-side electrode 16 were formed.
- the back surface of the substrate 11 was polished and adjusted to a thickness of about 100 ⁇ m, and separated into chips by scribing.
- the light-emitting element obtained as described above was bonded by Au bumps on a Si diode having a pair of positive and negative electrodes with the electrode formation surface side facing down. At this time, the light-emitting element was mounted so that the p-side electrode 16 and the n-side electrode 17 of the light-emitting element were connected to the negative electrode and the positive electrode of the Si diode, respectively. Thereafter, the Si diode on which the light emitting element was mounted was placed on the stem with Ag paste, the positive electrode of the Si diode was connected to the electrode on the stem with a wire, and then resin molded to produce a light emitting diode.
- the light emitting device When the obtained light emitting diode was driven with a forward current of 350 mA, the forward operating voltage was about 3.7 V, and the light emission output (total radiant flux) was 253 mW.
- the light emitting device has a thickness of 0.5 to 1.5 atomic layers in the adhesive layer without reducing the adhesion of the reflective layer. Light absorption can be reduced and light extraction efficiency can be greatly improved.
- the light-emitting device according to the present invention can greatly improve the light absorption of the adhesive layer without reducing the adhesion of the reflective layer, and is useful as a light-emitting device having a reflective layer.
- substrate 12 buffer layer 13 n-type semiconductor layer 14 light-emitting layer 15 p-type semiconductor layer 16 p-side electrode 17 n-side electrode 21 resist film 22 adhesive sheet 61 adhesive layer 62 reflective layer 63 ashing damage reduction layer 64 migration reduction layer 65 bonding pad 71 Titanium layer 72 Gold layer
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Abstract
Description
本発明の一実施形態について図面を参照して説明する。図3は、一実施形態に係る発光素子の断面構成を示している。図3に示すように、本実施形態の発光素子は、基板11の上にバッファ層12を介して順次形成されたn型半導体層13と、発光層14とp型半導体層15とを有している。基板11は、光透過性を有しており、サファイア基板、SiC基板、GaN基板等を用いることができる。n型半導体層13は少なくともGaとNを含む窒化物半導体からなり、Si又はGe等のn型不純物を含む。n型半導体層13の膜厚は例えば2μmとすればよい。また、n型半導体層13は複数の半導体層が積層された積層体であってもよい。
まず、表面を鏡面に仕上げられたGaNの基板1を反応管内の基板ホルダーに載置した後、基板1の温度を1050℃に保ち、窒素と水素とアンモニアを流しながら基板1を5分間加熱することにより、基板1の表面に付着している有機物等の汚れや水分を取り除いた。
12 バッファ層
13 n型半導体層
14 発光層
15 p型半導体層
16 p側電極
17 n側電極
21 レジスト膜
22 粘着シート
61 接着層
62 反射層
63 アッシングダメージ低減層
64 マイグレーション低減層
65 ボンディングパッド
71 チタン層
72 金層
Claims (3)
- 基板の上に順次積層された、n型半導体層、発光層及びp型半導体層と、
前記p型半導体層の上に形成されたp側電極とを備え、
前記p側電極は、
前記p型半導体層と接して形成され、膜厚が0.5原子層以上且つ1.5原子層以下の白金からなる接着層と、
前記接着層と接して形成された銀を含む材料からなる反射層とを有している発光素子。 - 前記反射層は、銀又は銀を含む合金からなる請求項1に記載の発光素子。
- 前記反射層は、銀又は銀を含む合金からなる層を含む複数の層の積層体である請求項1に記載の発光素子。
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US12/989,630 US20110037092A1 (en) | 2008-06-06 | 2009-06-01 | Light-emitting element |
JP2010515761A JPWO2009147822A1 (ja) | 2008-06-06 | 2009-06-01 | 発光素子 |
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JP2008-148787 | 2008-06-06 | ||
JP2008148787 | 2008-06-06 |
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US (1) | US20110037092A1 (ja) |
JP (1) | JPWO2009147822A1 (ja) |
TW (1) | TW200952224A (ja) |
WO (1) | WO2009147822A1 (ja) |
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JP5361925B2 (ja) * | 2011-03-08 | 2013-12-04 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
CN103797591A (zh) * | 2011-08-17 | 2014-05-14 | 三星电子株式会社 | 制造氮化物半导体发光器件的方法以及由此制造出的氮化物半导体发光器件 |
JP5639626B2 (ja) * | 2012-01-13 | 2014-12-10 | シャープ株式会社 | 半導体発光素子及び電極成膜方法 |
JP6627728B2 (ja) * | 2016-11-24 | 2020-01-08 | 豊田合成株式会社 | 発光素子の製造方法 |
US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
JP2022044493A (ja) * | 2020-09-07 | 2022-03-17 | 日亜化学工業株式会社 | 発光素子 |
Citations (2)
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JP2004260178A (ja) * | 2003-02-26 | 2004-09-16 | Osram Opto Semiconductors Gmbh | 光電子半導体チップに用いられる電気的なコンタクトならびに該電気的なコンタクトを製造するための方法 |
JP2008508726A (ja) * | 2004-07-27 | 2008-03-21 | クリー インコーポレイテッド | P型窒化物発光デバイス用の極薄オーミックコンタクトおよび形成方法 |
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JP2004063732A (ja) * | 2002-07-29 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 発光素子 |
US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
-
2009
- 2009-06-01 WO PCT/JP2009/002436 patent/WO2009147822A1/ja active Application Filing
- 2009-06-01 US US12/989,630 patent/US20110037092A1/en not_active Abandoned
- 2009-06-01 JP JP2010515761A patent/JPWO2009147822A1/ja not_active Withdrawn
- 2009-06-04 TW TW098118599A patent/TW200952224A/zh unknown
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---|---|---|---|---|
JP2004260178A (ja) * | 2003-02-26 | 2004-09-16 | Osram Opto Semiconductors Gmbh | 光電子半導体チップに用いられる電気的なコンタクトならびに該電気的なコンタクトを製造するための方法 |
JP2008508726A (ja) * | 2004-07-27 | 2008-03-21 | クリー インコーポレイテッド | P型窒化物発光デバイス用の極薄オーミックコンタクトおよび形成方法 |
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JPWO2009147822A1 (ja) | 2011-10-20 |
US20110037092A1 (en) | 2011-02-17 |
TW200952224A (en) | 2009-12-16 |
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