WO2009142103A1 - レーザ光照射方法およびレーザ光照射装置 - Google Patents

レーザ光照射方法およびレーザ光照射装置 Download PDF

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Publication number
WO2009142103A1
WO2009142103A1 PCT/JP2009/058488 JP2009058488W WO2009142103A1 WO 2009142103 A1 WO2009142103 A1 WO 2009142103A1 JP 2009058488 W JP2009058488 W JP 2009058488W WO 2009142103 A1 WO2009142103 A1 WO 2009142103A1
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WO
WIPO (PCT)
Prior art keywords
laser light
laser beam
thin film
region
scanning
Prior art date
Application number
PCT/JP2009/058488
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English (en)
French (fr)
Japanese (ja)
Inventor
加藤　修
純一 次田
淳司 山本
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株式会社日本製鋼所
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Publication of WO2009142103A1 publication Critical patent/WO2009142103A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

Definitions

  • a thin film diode or thin film transistor is formed in a matrix shape on a substrate, or a semiconductor thin film to be formed is irradiated with a belt-shaped laser beam to form an amorphous film formed on the substrate, for example.
  • the present invention relates to a laser beam irradiation method and a laser beam irradiation apparatus for crystallization.
  • Laser annealing using a laser beam is performed as part of a method for converting a semiconductor device manufacturing process into a low-temperature process.
  • a semiconductor thin film such as amorphous silicon formed on an insulating substrate is irradiated with a laser beam and locally heated and melted, and then the semiconductor thin film is crystallized in the cooling process.
  • Thin film transistors are integrated and formed using the crystallized semiconductor thin film as an active layer. Since the crystallized semiconductor thin film has high carrier mobility, the performance of the thin film transistor can be improved.
  • a semiconductor thin film formed on an insulating substrate is irradiated with a laser beam (laser beam) shaped in a band shape, and the laser beam is scanned by moving the insulating substrate in the short axis direction of the laser beam.
  • the semiconductor thin film having a size larger than the major axis of the laser beam can be uniformly crystallized (see, for example, Patent Document 1). ).
  • a method of forming a semiconductor thin film with a plurality of patterns on a substrate having a large area and processing this with a single irradiation apparatus is also performed.
  • the laser beam can be scanned multiple times in parallel to achieve a large-area substrate.
  • the laser beam irradiation can be performed.
  • the laser beam shaped into a band has an energy attenuation region at the end, uniform scanning becomes difficult when scanning is performed a plurality of times as described above.
  • the end of the laser beam is the end of the slit. Attenuation region remains even though it is minute due to the influence of diffraction at the surface.
  • the edge of the laser beam is applied to a formation region such as a thin film transistor arranged in a matrix, the electrical characteristics of the TFT manufactured in the region reannealed by the laser beam edge are reduced, This causes variation in TFTs.
  • the present invention has been made in view of the above circumstances, and provides a laser light irradiation method and a laser light irradiation apparatus capable of making the characteristics of a large number of thin film transistors uniform even in a semiconductor thin film having a large area. For the purpose.
  • the first aspect of the present invention is that a semiconductor thin film formed on a substrate and in which thin film diodes or thin film transistors are arranged in a matrix is irradiated with a belt-shaped laser light,
  • the laser light irradiation method of scanning the laser light on the semiconductor thin film by relatively moving the semiconductor thin film in the short axis direction of the laser light the length of the laser light between the individual formation regions of the diodes or transistors The laser light is scanned such that the end in the axial direction is positioned and the edge in the long axis direction of the laser light does not reach the outer formation region.
  • an energy density nonuniform region at an end portion in the major axis direction of the laser beam is formed between the formation regions. It is characterized by being positioned only.
  • the laser beam in the first or second aspect of the present invention, has an energy density uniform region of 96% or more of the maximum energy density and less than 96% of the maximum energy density.
  • An energy density non-uniform region is used.
  • a laser beam irradiation method is the laser beam irradiation method according to any one of the first to third aspects of the present invention, wherein laser beam irradiation and scanning are further performed adjacent to the laser beam irradiation region by the laser beam irradiation and scanning.
  • adjacent laser beam scanning regions have an overlapping portion only between the same formation regions.
  • the formation region may be a region where a diode or a transistor has already been formed, or a region in the middle of being formed, or a subsequent process. A region where a diode or a transistor is to be formed.
  • a laser beam irradiation method according to any one of the first to fifth aspects, wherein a marking is provided on the semiconductor thin film, the marking is detected, and the semiconductor thin film is arranged based on the marking. The position of the formation region of the diode or transistor is determined, and the irradiation position of the laser beam is determined based on the determination result.
  • a laser beam irradiation apparatus includes a laser beam oscillator that outputs laser beam, an optical system that guides the laser beam output from the laser beam oscillator and shapes it into a strip-shaped laser beam, and a substrate.
  • a moving device for placing a semiconductor thin film on which a diode or a transistor is arranged in a matrix and moving it at least in the X- and Y-axis directions, and a detection unit for detecting a marking provided on the substrate side together with position information
  • a storage unit that stores position data for determining the position of each diode or transistor forming region disposed with reference to the marking; marking position information by the detection unit; and the position stored in the storage unit From the data, the long axis direction end of the laser beam is located between the forming regions, and the long axis direction edge of the laser light is outside the forming region
  • the control unit causes the laser scanning of the semiconductor thin film to be performed while shifting the position in the major axis direction of the laser light.
  • the irradiation position of the laser beam and / or the movement position of the moving table are controlled so that adjacent laser beam scanning regions by optical scanning have overlapping portions only in the same formation region.
  • the laser beam is irradiated onto the semiconductor thin film formed on the substrate and on which the thin film diodes or thin film transistors are arranged in a matrix.
  • the major axis direction of the laser beam between the individual formation regions of the diodes or transistors Since the laser beam is scanned so that the end portion is positioned and the edge in the major axis direction of the laser beam does not reach the outer formation region, the laser beam that becomes a non-uniform region in the multiple scans of the laser beam
  • the end portions are positioned between the formation regions without covering the formation region of the thin film transistor and the like, and the characteristics of the thin film transistor and the like can be made uniform.
  • a large-area panel that is not limited by the length of the laser beam can be manufactured. As a result, it is a technology for dealing with a
  • a laser beam oscillator that outputs laser beam
  • an optical system that guides the laser beam output from the laser beam oscillator and shapes it into a strip-shaped laser beam
  • a substrate A moving base for depositing a semiconductor thin film on which a diode or a transistor is arranged in a matrix and moving it at least in the X- and Y-axis directions, and a detection unit for detecting a marking provided on the substrate side together with position information
  • a storage unit that stores formation region position data for determining the positions of the individual formation regions of the diodes or transistors arranged with reference to the marking, and marking position information by the detection unit and the storage unit From the formation region position data, the long-axis direction end of the laser beam is located between the formation regions and the long-axis end edge of the laser beam Since a control unit for controlling the irradiation position of the laser beam and the moving position of the moving table is provided so as not to reach the outer formation region, scanning of the laser
  • FIG. 1 shows a laser annealing apparatus 1 as a laser beam irradiation apparatus of the present invention, which will be described below.
  • the laser annealing processing apparatus 1 includes a processing chamber 2 that performs processing by irradiating a semiconductor thin film with laser light.
  • the processing chamber 2 is irradiated with a laser in an atmosphere of nitrogen or vacuum so that an amorphous silicon thin film is formed. Is crystallized into a polysilicon thin film.
  • the processing chamber 2 is provided with a moving device 3 on which a substrate 20 on which a semiconductor thin film 21 is formed is placed, and a laser light introduction window 4 for introducing laser light from the outside is provided on the upper wall of the processing chamber 2.
  • a slit plate 5 having a slit whose major axis length is shorter than that of the strip-shaped laser beam introduced from the laser beam introduction window 4 is provided.
  • the laser beam is transmitted through the slit of the slit plate 5 so that both ends in the major axis direction are blocked and the attenuation region is removed.
  • the slit plate 5 is desirably installed as close to the semiconductor thin film as possible. Thereby, the spread of diffraction generated at the slit end can be reduced.
  • a laser oscillator 10 and an optical system 11 that guides laser light 12 output from the laser oscillator 10 into the processing chamber 2 are disposed.
  • the optical system 11 includes a lens group 11a, a mirror 11b, and the like.
  • a detection unit 6 that reads a marking (not shown) provided on the substrate 20 on the moving device 3 is provided.
  • the marking is configured by, for example, a cross mark
  • the detection unit 6 is configured by a CCD camera and an image processing apparatus, and can acquire marking position information.
  • the laser annealing apparatus 1 has a control unit 7 that can control the entire apparatus such as movement of the moving device 3, and the control unit 7 includes a CPU, a program for operating the CPU, a ROM, a RAM, and the like ( Neither is shown).
  • the control unit 7 can acquire the marking position information on the semiconductor thin film 21 placed on the moving device 3 in response to the detection result of the detection unit 6.
  • the storage unit 8 is connected to the control unit 7 so that data can be read and written.
  • the storage unit 8 stores position data relating to the formation region of the thin film diode and the thin film transistor in the semiconductor thin film 21.
  • the position data may be a display of coordinates with respect to the marking, or may be data indicating a pattern of the formation region. The point is that it is possible to determine the position of the gap between the individual formation regions. A plurality of pieces of position data may be prepared according to each product.
  • the storage unit 8 can be configured by a flash memory, an HDD, or the like that holds data in a nonvolatile manner, or may be configured by an external storage device using a card memory, a USB memory, or the like.
  • the marking position of the substrate 20 is detected by the detection unit 6, and the detection result is sent to the control unit 7.
  • the control unit 7 acquires the marking position information based on the detection result.
  • position data regarding the TFT formation region 211 is acquired from the storage unit 8, and the position of the gap 211 a between the individual TFT formation regions 211 and 211 is specified.
  • the TFT formation region 211 may be a region where a TFT has already been formed, a region where a TFT is to be formed, or a region where a TFT will be formed in a later process.
  • the non-uniform region means a region at both ends where the energy density is less than 96% with respect to the maximum energy density of the laser beam.
  • the laser beam 12 generated by the laser oscillator 10 is introduced into the processing chamber 2 through the optical system 11 and the laser beam introduction window 4, and both ends of the laser beam long axis direction are removed by the slit plate 5.
  • the gentle attenuation regions at both ends in the long axis direction of the laser light are removed.
  • the scanning is performed twice while shifting the position in the long axis direction of the laser light.
  • the scanning unit 12S1 and the scanning region 12S2 are overlapped at the ends and the moving unit 3 is moved by the control unit 7 so that the overlapping portions are located in the same gap 211a. Control the position and movement of the.
  • the gap 211a between the TFT formation regions 211 and 211 in the scanning region 12S1 is irradiated with all of the non-uniform region at the end of the laser beam 12, Similarly, in the scanning area 12S2, the same gap 211a is irradiated with all of the non-uniform area at the end of the laser beam 12, and the overlapping of both scanning areas 12S1 and 12S2 is located in the same gap 211a.
  • the uniform region of the laser beam 12 is only irradiated once, and uniform characteristics can be obtained in each TFT formation region 211.
  • the gap 211a is located in each pixel area 210. However, in the pixel area 210 excluding the TFT formation region 211, the characteristics as a semiconductor thin film are not adversely affected even when laser light is irradiated with non-uniform energy. .
  • the semiconductor thin film 21 is processed by two laser beam scans. However, depending on the size of the semiconductor thin film, three or more laser beam scans may be performed. In addition, scanning is performed so that each scanning region overlaps between the same TFT formation regions. Further, in this embodiment, the description has been given as the laser light irradiation to the semiconductor thin film having the TFT formation region, but the present invention can be similarly applied to the laser light irradiation to the semiconductor thin film having the thin film diode formation region. In this embodiment, the annealing process and the processing apparatus for crystallizing the amorphous thin film by irradiating the laser beam have been described. However, the present invention is not limited to the annealing process.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
PCT/JP2009/058488 2008-05-22 2009-04-30 レーザ光照射方法およびレーザ光照射装置 WO2009142103A1 (ja)

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JP2008134382A JP2009283691A (ja) 2008-05-22 2008-05-22 レーザ光照射方法およびレーザ光照射装置
JP2008-134382 2008-05-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739924B (zh) * 2016-10-19 2021-09-21 日商濱松赫德尼古斯股份有限公司 雷射光照射裝置

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN102473606A (zh) * 2010-07-16 2012-05-23 松下电器产业株式会社 结晶性半导体膜的制造方法以及结晶性半导体膜的制造装置
JP5717146B2 (ja) * 2012-10-23 2015-05-13 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置

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JP2001044133A (ja) * 1999-08-02 2001-02-16 Sharp Corp レーザ照射方法及び半導体装置の製造方法
JP2003209065A (ja) * 2001-11-09 2003-07-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法、半導体装置、半導体装置の生産システム並びに電子機器

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JPH09270393A (ja) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd レーザー光照射装置
JPH09321311A (ja) * 1996-05-24 1997-12-12 Sony Corp 薄膜半導体装置の製造方法
JP3883935B2 (ja) * 2001-08-31 2007-02-21 株式会社半導体エネルギー研究所 レーザ照射装置
JP2003124137A (ja) * 2001-10-10 2003-04-25 Fujitsu Ltd 半導体製造装置
JP2005243747A (ja) * 2004-02-24 2005-09-08 Sharp Corp 半導体薄膜の製造方法、半導体薄膜製造装置、半導体薄膜、半導体装置および液晶表示装置
JP5178002B2 (ja) * 2005-12-20 2013-04-10 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法

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Publication number Priority date Publication date Assignee Title
JP2001044133A (ja) * 1999-08-02 2001-02-16 Sharp Corp レーザ照射方法及び半導体装置の製造方法
JP2003209065A (ja) * 2001-11-09 2003-07-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法、半導体装置、半導体装置の生産システム並びに電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739924B (zh) * 2016-10-19 2021-09-21 日商濱松赫德尼古斯股份有限公司 雷射光照射裝置
US11465235B2 (en) 2016-10-19 2022-10-11 Hamamatsu Photonics K.K. Laser light irradiating device

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TW201007823A (en) 2010-02-16

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