WO2009139603A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2009139603A3
WO2009139603A3 PCT/KR2009/002596 KR2009002596W WO2009139603A3 WO 2009139603 A3 WO2009139603 A3 WO 2009139603A3 KR 2009002596 W KR2009002596 W KR 2009002596W WO 2009139603 A3 WO2009139603 A3 WO 2009139603A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive
layer
emitting device
semiconductor light
type semiconductor
Prior art date
Application number
PCT/KR2009/002596
Other languages
English (en)
French (fr)
Other versions
WO2009139603A2 (ko
Inventor
임우식
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP09746782.3A priority Critical patent/EP2290709B1/en
Priority to US12/992,950 priority patent/US8530919B2/en
Priority to CN2009801176605A priority patent/CN102027606B/zh
Publication of WO2009139603A2 publication Critical patent/WO2009139603A2/ko
Publication of WO2009139603A3 publication Critical patent/WO2009139603A3/ko
Priority to US13/963,724 priority patent/US8766308B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층 아래에 제2전극층; 및 상기 제1도전형 반도체층, 상기 활성층 및 상기 제2도전형 반도체층 중 적어도 2개의 층 둘레에 절연층을 포함한다.
PCT/KR2009/002596 2008-05-16 2009-05-15 반도체 발광소자 WO2009139603A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09746782.3A EP2290709B1 (en) 2008-05-16 2009-05-15 Semiconductor light-emitting device
US12/992,950 US8530919B2 (en) 2008-05-16 2009-05-15 Semi-conductor light-emitting device
CN2009801176605A CN102027606B (zh) 2008-05-16 2009-05-15 半导体发光器件
US13/963,724 US8766308B2 (en) 2008-05-16 2013-08-09 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0045740 2008-05-16
KR1020080045740A KR20090119596A (ko) 2008-05-16 2008-05-16 반도체 발광소자 및 그 제조방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/992,950 A-371-Of-International US8530919B2 (en) 2008-05-16 2009-05-15 Semi-conductor light-emitting device
US13/963,724 Continuation US8766308B2 (en) 2008-05-16 2013-08-09 Semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
WO2009139603A2 WO2009139603A2 (ko) 2009-11-19
WO2009139603A3 true WO2009139603A3 (ko) 2010-02-18

Family

ID=41319183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002596 WO2009139603A2 (ko) 2008-05-16 2009-05-15 반도체 발광소자

Country Status (5)

Country Link
US (2) US8530919B2 (ko)
EP (1) EP2290709B1 (ko)
KR (1) KR20090119596A (ko)
CN (1) CN102027606B (ko)
WO (1) WO2009139603A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039896B1 (ko) * 2009-12-03 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999798B1 (ko) 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20110123118A (ko) * 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
KR101799451B1 (ko) * 2011-06-02 2017-11-20 엘지이노텍 주식회사 발광 소자
KR102092911B1 (ko) * 2014-03-28 2020-03-24 동우 화인켐 주식회사 반도체 발광층 소프트 에칭액 조성물, 발광소자 및 디스플레이 소자
KR101771461B1 (ko) * 2015-04-24 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR101771463B1 (ko) * 2016-07-15 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102271031B1 (ko) * 2019-10-15 2021-06-30 (재)한국나노기술원 절연체 전자친화도를 이용한 고효율 마이크로 led 장치
CN110911536A (zh) * 2019-12-13 2020-03-24 深圳第三代半导体研究院 一种Micro-LED芯片及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060035424A (ko) * 2004-10-22 2006-04-26 서울옵토디바이스주식회사 ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723434B2 (ja) 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
CN1848564A (zh) * 2001-03-09 2006-10-18 精工爱普生株式会社 发光元件的制造方法、半导体激光器及其制造方法
TW521448B (en) * 2001-03-09 2003-02-21 Seiko Epson Corp Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device
CN100405619C (zh) * 2002-01-28 2008-07-23 日亚化学工业株式会社 具有支持衬底的氮化物半导体器件及其制造方法
JP2006100500A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP4999696B2 (ja) * 2004-10-22 2012-08-15 ソウル オプト デバイス カンパニー リミテッド ＧａＮ系化合物半導体発光素子及びその製造方法
KR101154744B1 (ko) 2005-08-01 2012-06-08 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법
JP5016808B2 (ja) 2005-11-08 2012-09-05 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
KR101371511B1 (ko) * 2007-10-04 2014-03-11 엘지이노텍 주식회사 수직형 발광 소자
US7943942B2 (en) 2008-03-25 2011-05-17 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with double-sided passivation
KR100992657B1 (ko) 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060035424A (ko) * 2004-10-22 2006-04-26 서울옵토디바이스주식회사 ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

Also Published As

Publication number Publication date
WO2009139603A2 (ko) 2009-11-19
EP2290709A4 (en) 2012-10-10
EP2290709A2 (en) 2011-03-02
EP2290709B1 (en) 2016-08-17
US8530919B2 (en) 2013-09-10
CN102027606A (zh) 2011-04-20
US20110062480A1 (en) 2011-03-17
KR20090119596A (ko) 2009-11-19
US20130320389A1 (en) 2013-12-05
US8766308B2 (en) 2014-07-01
CN102027606B (zh) 2013-04-24

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